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LASERS, OPTICS, AND OPTOELECTRONICS

Beam steering in waveguide arrays

T. Pertsch; T. Zentgraf; U. Peschel; A. Bräuer; F. Lederer

Appl. Phys. Lett. 80, 3247–3249 (2002) https://doi.org/10.1063/1.1476720

Abstract

View articletitled, Beam steering in waveguide arrays

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Interferential coupling effect on the whispering-gallery mode lasing in a double-layered microcylinder

Hee-Jong Moon; Kyungwon An

Appl. Phys. Lett. 80, 3250–3252 (2002) https://doi.org/10.1063/1.1476399

Abstract

View articletitled, Interferential coupling effect on the whispering-gallery mode lasing in a double-layered microcylinder

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Mode identification in spherical microcavities doped with quantum dots

B. Möller; M. V. Artemyev; U. Woggon; R. Wannemacher

Appl. Phys. Lett. 80, 3253–3255 (2002) https://doi.org/10.1063/1.1475364

Abstract

View articletitled, Mode identification in spherical microcavities doped with quantum dots

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Infrared electroluminescence from an organic ionic dye containing no rare-earth ions

Hiroyuki Suzuki

Appl. Phys. Lett. 80, 3256–3258 (2002) https://doi.org/10.1063/1.1476711

Abstract

View articletitled, Infrared electroluminescence from an organic ionic dye containing no rare-earth ions

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Fiber Bragg gratings with enhanced thermal stability

Gilberto Brambilla; Harvey Rutt

Appl. Phys. Lett. 80, 3259–3261 (2002) https://doi.org/10.1063/1.1475366

Abstract

View articletitled, Fiber Bragg gratings with enhanced thermal stability

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Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications

Y. Wei; A. Gin; M. Razeghi; G. J. Brown

Appl. Phys. Lett. 80, 3262–3264 (2002) https://doi.org/10.1063/1.1476395

Abstract

View articletitled, Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications

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Raster-scan imaging with normal-incidence, midinfrared InAs/GaAs quantum dot infrared photodetectors

A. D. Stiff-Roberts; S. Chakrabarti; S. Pradhan; B. Kochman; P. Bhattacharya

Appl. Phys. Lett. 80, 3265–3267 (2002) https://doi.org/10.1063/1.1476387

Abstract

View articletitled, Raster-scan imaging with normal-incidence, midinfrared InAs/GaAs quantum dot infrared photodetectors

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Monolithic integration of near-infrared Ge photodetectors with Si complementary metal–oxide–semiconductor readout electronics

Gianlorenzo Masini; Valentino Cencelli; Lorenzo Colace; Francesco De Notaristefani; Gaetano Assanto

Appl. Phys. Lett. 80, 3268–3270 (2002) https://doi.org/10.1063/1.1477267

Abstract

View articletitled, Monolithic integration of near-infrared Ge photodetectors with Si complementary metal–oxide–semiconductor readout electronics

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Light-controllable room temperature negative differential resistance in deep-trench type nitride–oxide tunneling device and its applications

Fen Chen; Baozhen Li; Kai D Feng

Appl. Phys. Lett. 80, 3271–3273 (2002) https://doi.org/10.1063/1.1476959

Abstract

View articletitled, Light-controllable room temperature negative differential resistance in deep-trench type nitride–oxide tunneling device and its applications

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Intersubband absorption performed on $p$ -type modulation-doped ${Si}_{0.2} {Ge}_{0.8} / Si$ quantum wells grown on ${Si}_{0.5} {Ge}_{0.5}$ pseudosubstrate

L. Diehl; H. Sigg; G. Dehlinger; D. Grützmacher; E. Müller; U. Gennser; I. Sagnes; T. Fromherz; Y. Campidelli; O. Kermarrec; D. Bensahel; J. Faist

Appl. Phys. Lett. 80, 3274–3276 (2002) https://doi.org/10.1063/1.1476723

Abstract

View articletitled, Intersubband absorption performed on <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi></math>-type modulation-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>0.2</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mtext>0.8</mtext></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">Si</mi></math> quantum wells grown on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>0.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mtext>0.5</mtext></mrow></msub></math> pseudosubstrate

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1.3 μm InAs quantum dot laser with $T_{o} =161 K$ from 0 to 80 °C

O. B. Shchekin; D. G. Deppe

Appl. Phys. Lett. 80, 3277–3279 (2002) https://doi.org/10.1063/1.1476708

Abstract

View articletitled, 1.3 μm InAs quantum dot laser with <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>T</mi><mrow><mi>o</mi></mrow></msub><mtext xmlns="">=161 </mtext><mi mathvariant="normal" xmlns="">K</mi></math> from 0 to 80 °C

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Hybrid time-resolved spectroscopic system for evaluating laser material using a table-top-sized, low-jitter, 3-MeV picosecond electron-beam source with a photocathode

Yuji Suzuki; Toshimasa Kozeki; Shingo Ono; Hidetoshi Murakami; Hideyuki Ohtake; Nobuhiko Sarukura; Terunobu Nakajyo; Fumio Sakai; Yasushi Aoki

Appl. Phys. Lett. 80, 3280–3282 (2002) https://doi.org/10.1063/1.1476384

Abstract

View articletitled, Hybrid time-resolved spectroscopic system for evaluating laser material using a table-top-sized, low-jitter, 3-MeV picosecond electron-beam source with a photocathode

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Two-section InGaN multiple-quantum-well laser diode with integrated electroabsorption modulator

Michael Kneissl; Thomas L. Paoli; Peter Kiesel; David W. Treat; Mark Teepe; Naoko Miyashita; Noble M. Johnson

Appl. Phys. Lett. 80, 3283–3285 (2002) https://doi.org/10.1063/1.1477270

Abstract

View articletitled, Two-section InGaN multiple-quantum-well laser diode with integrated electroabsorption modulator

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Near field imaging with negative dielectric constant lenses

J. T. Shen; P. M. Platzman

Appl. Phys. Lett. 80, 3286–3288 (2002) https://doi.org/10.1063/1.1471933

Abstract

View articletitled, Near field imaging with negative dielectric constant lenses

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Tunable diode-pumped continuous-wave ${Cr}^{2+} : ZnSe$ laser

Evgeni Sorokin; Irina T. Sorokina

Appl. Phys. Lett. 80, 3289–3291 (2002) https://doi.org/10.1063/1.1479214

Abstract

View articletitled, Tunable diode-pumped continuous-wave <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Cr</mi><mrow><mtext>2+</mtext></mrow></msup><mi xmlns="">:</mi><mi mathvariant="normal" xmlns="">ZnSe</mi></math> laser

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Initiation and evolution of phase separation in heteroepitaxial InAlAs films

B. Shin; A. Lin; K. Lappo; R. S. Goldman; M. C. Hanna; S. Francoeur; A. G. Norman; A. Mascarenhas

Appl. Phys. Lett. 80, 3292–3294 (2002) https://doi.org/10.1063/1.1476386

Abstract

View articletitled, Initiation and evolution of phase separation in heteroepitaxial InAlAs films

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Schwoebel-Ehrlich barrier: from two to three dimensions

S. J. Liu; Hanchen Huang; C. H. Woo

Appl. Phys. Lett. 80, 3295–3297 (2002) https://doi.org/10.1063/1.1475774

Abstract

View articletitled, Schwoebel-Ehrlich barrier: from two to three dimensions

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Nondestructive defect delineation in SiC wafers based on an optical stress technique

Xianyun Ma; Mathew Parker; Tangali S. Sudarshan

Appl. Phys. Lett. 80, 3298–3300 (2002) https://doi.org/10.1063/1.1469659

Abstract

View articletitled, Nondestructive defect delineation in SiC wafers based on an optical stress technique

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Study of photoluminescence at 3.310 and 3.368 eV in GaN/sapphire(0001) and GaN/GaAs(001) grown by liquid-target pulsed-laser deposition

K. W. Mah; J.-P. Mosnier; E. McGlynn; M. O. Henry; D. O’Mahony; J. G. Lunney

Appl. Phys. Lett. 80, 3301–3303 (2002) https://doi.org/10.1063/1.1476058

Abstract

View articletitled, Study of photoluminescence at 3.310 and 3.368 eV in GaN/sapphire(0001) and GaN/GaAs(001) grown by liquid-target pulsed-laser deposition

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Quantum chemical study of the mechanism of aluminum oxide atomic layer deposition

Yuniarto Widjaja; Charles B. Musgrave

Appl. Phys. Lett. 80, 3304–3306 (2002) https://doi.org/10.1063/1.1473237

Abstract

View articletitled, Quantum chemical study of the mechanism of aluminum oxide atomic layer deposition

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Manipulation of the equilibrium between diamond growth and renucleation to form a nanodiamond/amorphous carbon composite

X. T. Zhou; Q. Li; F. Y. Meng; I. Bello; C. S. Lee; S. T. Lee; Y. Lifshitz

Appl. Phys. Lett. 80, 3307–3309 (2002) https://doi.org/10.1063/1.1476721

Abstract

View articletitled, Manipulation of the equilibrium between diamond growth and renucleation to form a nanodiamond/amorphous carbon composite

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Recovery of microindents in a nickel–titanium shape-memory alloy: A “self-healing” effect

Wangyang Ni; Yang-Tse Cheng; David S. Grummon

Appl. Phys. Lett. 80, 3310–3312 (2002) https://doi.org/10.1063/1.1476064

Abstract

View articletitled, Recovery of microindents in a nickel–titanium shape-memory alloy: A “self-healing” effect

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Thin film alloy mixtures for high speed phase change optical storage: A study on $({Ge}_{1} {Sb}_{2} {Te}_{4})_{1−x} ({Sn}_{1} {Bi}_{2} {Te}_{4})_{x}$

Tae-Yon Lee; Ki-Bum Kim; Byung-ki Cheong; Taek Sung Lee; Sung Jin Park; Kyeong Seok Lee; Won Mok Kim; Soon Gwang Kim

Appl. Phys. Lett. 80, 3313–3315 (2002) https://doi.org/10.1063/1.1476705

Abstract

View articletitled, Thin film alloy mixtures for high speed phase change optical storage: A study on <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mn>1</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sb</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Te</mi><mrow><mn>4</mn></mrow></msub><msub xmlns=""><mi>)</mi><mrow><mtext>1−x</mtext></mrow></msub><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Sn</mi><mrow><mn>1</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Bi</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Te</mi><mrow><mn>4</mn></mrow></msub><msub xmlns=""><mi>)</mi><mrow><mi>x</mi></mrow></msub></math>

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Time-resolved photoluminescence studies of free excitons in ${CuInS}_{2}$ crystals

Kazuki Wakita; Kazuhito Nishi; Yoshihiko Ohta; Naoji Nakayama

Appl. Phys. Lett. 80, 3316–3318 (2002) https://doi.org/10.1063/1.1476960

Abstract

View articletitled, Time-resolved photoluminescence studies of free excitons in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CuInS</mi><mrow><mn>2</mn></mrow></msub></math> crystals

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Identification of nanocrystal nucleation and growth in ${Al}_{85} {Ni}_{5} Y_{8} {Co}_{2}$ metallic glass with quenched-in nuclei

J. Q. Wang; H. W. Zhang; X. J. Gu; K. Lu; F. Sommer; E. J. Mittemeijer

Appl. Phys. Lett. 80, 3319–3321 (2002) https://doi.org/10.1063/1.1476388

Abstract

View articletitled, Identification of nanocrystal nucleation and growth in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mn>85</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ni</mi><mrow><mn>5</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Y</mi><mrow><mn>8</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Co</mi><mrow><mn>2</mn></mrow></msub></math> metallic glass with quenched-in nuclei

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Phonons on GaN(110)

H. M. Tütüncü; R. Miotto; G. P. Srivastava; J. S. Tse

Appl. Phys. Lett. 80, 3322–3324 (2002) https://doi.org/10.1063/1.1476401

Abstract

View articletitled, Phonons on GaN(110)

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In situ ordering of FePt thin films with face-centered-tetragonal (001) texture on ${Cr}_{100−x} {Ru}_{x}$ underlayer at low substrate temperature

Yingfan Xu; J. S. Chen; J. P. Wang

Appl. Phys. Lett. 80, 3325–3327 (2002) https://doi.org/10.1063/1.1476706

Abstract

View articletitled, In situ ordering of FePt thin films with face-centered-tetragonal (001) texture on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cr</mi><mrow><mtext>100−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ru</mi><mrow><mi>x</mi></mrow></msub></math> underlayer at low substrate temperature

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Lattice distortions and the transmuted-Ge related luminescence in neutron-transmutation-doped GaN

K. Kuriyama; T. Tokumasu; Jun Takahashi; H. Kondo; M. Okada

Appl. Phys. Lett. 80, 3328–3330 (2002) https://doi.org/10.1063/1.1477269

Abstract

View articletitled, Lattice distortions and the transmuted-Ge related luminescence in neutron-transmutation-doped GaN

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

G-quartet biomolecular nanowires

A. Calzolari; R. Di Felice; E. Molinari; A. Garbesi

Appl. Phys. Lett. 80, 3331–3333 (2002) https://doi.org/10.1063/1.1476700

Abstract

View articletitled, G-quartet biomolecular nanowires

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$Si - {SiO}_{2}$ barrier height and its temperature dependence in metal-oxide-semiconductor structures with ultrathin gate oxide

A. Hadjadj; O. Simonetti; T. Maurel; G. Salace; C. Petit

Appl. Phys. Lett. 80, 3334–3336 (2002) https://doi.org/10.1063/1.1476709

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Si</mi><mi xmlns="">–</mi><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> barrier height and its temperature dependence in metal-oxide-semiconductor structures with ultrathin gate oxide

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Estimation of the impact of electrostatic discharge on density of states in hydrogenated amorphous silicon thin-film transistors

Natasa Tosic Golo; Siebrigje van der Wal; Fred G. Kuper; Ton Mouthaan

Appl. Phys. Lett. 80, 3337–3339 (2002) https://doi.org/10.1063/1.1476394

Abstract

View articletitled, Estimation of the impact of electrostatic discharge on density of states in hydrogenated amorphous silicon thin-film transistors

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Combining a scanning near-field optical microscope with a picosecond streak camera: Statistical analysis of exciton kinetics in GaAs single-quantum wells

U. Neuberth; L. Walter; G. von Freymann; B. Dal Don; H. Kalt; M. Wegener; G. Khitrova; H. M. Gibbs

Appl. Phys. Lett. 80, 3340–3342 (2002) https://doi.org/10.1063/1.1477274

Abstract

View articletitled, Combining a scanning near-field optical microscope with a picosecond streak camera: Statistical analysis of exciton kinetics in GaAs single-quantum wells

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Interaction between low-energy electrons and defects created by hot holes in ultrathin silicon dioxide

Eric M. Vogel; Dawei Heh; Joseph B. Bernstein

Appl. Phys. Lett. 80, 3343–3345 (2002) https://doi.org/10.1063/1.1471376

Abstract

View articletitled, Interaction between low-energy electrons and defects created by hot holes in ultrathin silicon dioxide

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Size and grain-boundary effects of a gold nanowire measured by conducting atomic force microscopy

Alexander Bietsch; Bruno Michel

Appl. Phys. Lett. 80, 3346–3348 (2002) https://doi.org/10.1063/1.1473868

Abstract

View articletitled, Size and grain-boundary effects of a gold nanowire measured by conducting atomic force microscopy

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Photoluminescence and photoluminescence excitation studies of as-grown and P-implanted GaN: On the nature of yellow luminescence

H. Y. Huang; C. H. Chuang; C. K. Shu; Y. C. Pan; W. H. Lee; W. K. Chen; W. H. Chen; M. C. Lee

Appl. Phys. Lett. 80, 3349–3351 (2002) https://doi.org/10.1063/1.1476400

Abstract

View articletitled, Photoluminescence and photoluminescence excitation studies of as-grown and P-implanted GaN: On the nature of yellow luminescence

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Band line-up and mechanisms of current flow in n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; E. A. Kozhukhova; B. Luo; J. Kim; R. Mehandru; F. Ren; K. P. Lee; S. J. Pearton; A. V. Osinsky; P. E. Norris

Appl. Phys. Lett. 80, 3352–3354 (2002) https://doi.org/10.1063/1.1477273

Abstract

View articletitled, Band line-up and mechanisms of current flow in n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions

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Anisotropy in breakdown field of 4H–SiC

Shun-ichi Nakamura; Hironori Kumagai; Tsunenobu Kimoto; Hiroyuki Matsunami

Appl. Phys. Lett. 80, 3355–3357 (2002) https://doi.org/10.1063/1.1477271

Abstract

View articletitled, Anisotropy in breakdown field of 4H–SiC

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MAGNETISM AND SUPERCONDUCTIVITY

Effects of rapid thermal annealing on the ferromagnetic properties of sputtered ${Zn}_{1−x} ({Co}_{0.5} {Fe}_{0.5})_{x} O$ thin films

Young Mok Cho; Woong Kil Choo; Hyojin Kim; Dojin Kim; YoungEon Ihm

Appl. Phys. Lett. 80, 3358–3360 (2002) https://doi.org/10.1063/1.1478146

Abstract

View articletitled, Effects of rapid thermal annealing on the ferromagnetic properties of sputtered <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Zn</mi><mrow><mtext>1−x</mtext></mrow></msub><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Co</mi><mrow><mtext>0.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mtext>0.5</mtext></mrow></msub><msub xmlns=""><mi>)</mi><mrow><mi>x</mi></mrow></msub><mi mathvariant="normal" xmlns="">O</mi></math> thin films

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Magnetic anisotropy of ferromagnetic ${La}_{0.7} {Sr}_{0.3} {MnO}_{3}$ epitaxial thin films: Dependence on temperature and film thickness

K. Steenbeck; T. Habisreuther; C. Dubourdieu; J. P. Sénateur

Appl. Phys. Lett. 80, 3361–3363 (2002) https://doi.org/10.1063/1.1473870

Abstract

View articletitled, Magnetic anisotropy of ferromagnetic <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mtext>0.7</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mtext>0.3</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mn>3</mn></mrow></msub></math> epitaxial thin films: Dependence on temperature and film thickness

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Room temperature operation of a high output current magnetic tunnel transistor

Sebastiaan van Dijken; Xin Jiang; Stuart S. P. Parkin

Appl. Phys. Lett. 80, 3364–3366 (2002) https://doi.org/10.1063/1.1474610

Abstract

View articletitled, Room temperature operation of a high output current magnetic tunnel transistor

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Large low-field magnetoresistance of phase-separated single-crystalline $\Pr_{0.7} {Pb}_{0.3} {MnO}_{3}$

Run-Wei Li; Zhi-Hong Wang; Wei-Ning Wang; Ji-Rong Sun; Qing-An Li; Shao-Ying Zhang; Zhao-Hua Cheng; Bao-Gen Shen; Ben-Xi Gu

Appl. Phys. Lett. 80, 3367–3369 (2002) https://doi.org/10.1063/1.1477940

Abstract

View articletitled, Large low-field magnetoresistance of phase-separated single-crystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pr</mi><mrow><mtext>0.7</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Pb</mi><mrow><mtext>0.3</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mn>3</mn></mrow></msub></math>

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DIELECTRICS AND FERROELECTRICITY

Structure and piezoelectric properties of sol–gel-derived 0.5 $Pb [{Yb}_{1/2} {Nb}_{1/2}] O_{3} –0.5$ ${PbTiO}_{3}$ thin films

Q. Q. Zhang; Q. F. Zhou; S. Trolier-McKinstry

Appl. Phys. Lett. 80, 3370–3372 (2002) https://doi.org/10.1063/1.1472476

Abstract

View articletitled, Structure and piezoelectric properties of sol–gel-derived 0.5 <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Pb</mi><mi xmlns="">[</mi><msub xmlns=""><mi mathvariant="normal">Yb</mi><mrow><mtext>1/2</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Nb</mi><mrow><mtext>1/2</mtext></mrow></msub><mi xmlns="">]</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub><mtext xmlns="">–0.5</mtext></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">PbTiO</mi><mrow><mn>3</mn></mrow></msub></math> thin films

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Depoling a ferroelectric capacitor

M. J. Higgins; A. Krishnan; M. M. J. Treacy; S. Bhattacharya

Appl. Phys. Lett. 80, 3373–3375 (2002) https://doi.org/10.1063/1.1476063

Abstract

View articletitled, Depoling a ferroelectric capacitor

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Epitaxial growth and planar dielectric properties of compositionally graded $({Ba}_{1−x} {Sr}_{x}) {TiO}_{3}$ thin films prepared by pulsed-laser deposition

Xinhua Zhu; Nui Chong; Helen Lai-Wah Chan; Chung-Loong Choy; Kin-Hung Wong; Zhiguo Liu; Naiben Ming

Appl. Phys. Lett. 80, 3376–3378 (2002) https://doi.org/10.1063/1.1475367

Abstract

View articletitled, Epitaxial growth and planar dielectric properties of compositionally graded <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Ba</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mi>x</mi></mrow></msub><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mn>3</mn></mrow></msub></math> thin films prepared by pulsed-laser deposition

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Time-resolved study of ${SrTiO}_{3}$ homoepitaxial pulsed-laser deposition using surface x-ray diffraction

G. Eres; J. Z. Tischler; M. Yoon; B. C. Larson; C. M. Rouleau; D. H. Lowndes; P. Zschack

Appl. Phys. Lett. 80, 3379–3381 (2002) https://doi.org/10.1063/1.1477279

Abstract

View articletitled, Time-resolved study of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrTiO</mi><mrow><mn>3</mn></mrow></msub></math> homoepitaxial pulsed-laser deposition using surface x-ray diffraction

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Resonant tunneling through metal (Ag–Ti)/insulator (MgO) triple barrier structures

T. Kado

Appl. Phys. Lett. 80, 3382–3384 (2002) https://doi.org/10.1063/1.1476707

Abstract

View articletitled, Resonant tunneling through metal (Ag–Ti)/insulator (MgO) triple barrier structures

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Excellent thermal stability of ${Al}_{2} O_{3} / {ZrO}_{2} / {Al}_{2} O_{3}$ stack structure for metal–oxide–semiconductor gate dielectrics application

Hyo Sik Chang; Sanghun Jeon; Hyunsang Hwang; Dae Won Moon

Appl. Phys. Lett. 80, 3385–3387 (2002) https://doi.org/10.1063/1.1477266

Abstract

View articletitled, Excellent thermal stability of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">ZrO</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> stack structure for metal–oxide–semiconductor gate dielectrics application

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Rapid biaxial texture development during nucleation of MgO thin films during ion beam-assisted deposition

Rhett T. Brewer; Harry A. Atwater

Appl. Phys. Lett. 80, 3388–3390 (2002) https://doi.org/10.1063/1.1476385

Abstract

View articletitled, Rapid biaxial texture development during nucleation of MgO thin films during ion beam-assisted deposition

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Dielectric nonlinearity and stochastic effects in strontium titanate

Alp T. Findikoğlu; Roberto Camassa; Grant Lythe; Q. X. Jia

Appl. Phys. Lett. 80, 3391–3393 (2002) https://doi.org/10.1063/1.1477278

Abstract

View articletitled, Dielectric nonlinearity and stochastic effects in strontium titanate

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Optical limiting in ${SrBi}_{2} {Ta}_{2} O_{9}$ and ${PbZr}_{x} {Ti}_{1−x} O_{3}$ ferroelectric thin films

Pingxiong Yang; Jianfeng Xu; John Ballato; Robert W. Schwartz; David L. Carroll

Appl. Phys. Lett. 80, 3394–3396 (2002) https://doi.org/10.1063/1.1477618

Abstract

View articletitled, Optical limiting in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrBi</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ta</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>9</mn></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">PbZr</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> ferroelectric thin films

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NANOSCALE SCIENCE AND DESIGN

Subwavelength-sized aperture fabrication in aluminum by a self-terminated corrosion process in the evanescent field

D. Haefliger; A. Stemmer

Appl. Phys. Lett. 80, 3397–3399 (2002) https://doi.org/10.1063/1.1476059

Abstract

View articletitled, Subwavelength-sized aperture fabrication in aluminum by a self-terminated corrosion process in the evanescent field

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Apertureless optical near-field fabrication using an atomic force microscope on photoresists

Alvarado Tarun; Marlon Rosendo H. Daza; Norihiko Hayazawa; Yasushi Inouye; Satoshi Kawata

Appl. Phys. Lett. 80, 3400–3402 (2002) https://doi.org/10.1063/1.1476956

Abstract

View articletitled, Apertureless optical near-field fabrication using an atomic force microscope on photoresists

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Terahertz conductivity of anisotropic single walled carbon nanotube films

Tae-In Jeon; Keun-Ju Kim; Chul Kang; Seung-Jae Oh; Joo-Hiuk Son; Kay Hyeok An; Dong Jae Bae; Young Hee Lee

Appl. Phys. Lett. 80, 3403–3405 (2002) https://doi.org/10.1063/1.1476713

Abstract

View articletitled, Terahertz conductivity of anisotropic single walled carbon nanotube films

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Self-assembly of Si nanoclusters on $6 H–SiC (0001)-(3×3)$ reconstructed surface

W. J. Ong; E. S. Tok; H. Xu; A. T. S. Wee

Appl. Phys. Lett. 80, 3406–3408 (2002) https://doi.org/10.1063/1.1476398

Abstract

View articletitled, Self-assembly of Si nanoclusters on <math xmlns="http://www.w3.org/1998/Math/MathML"><mn xmlns="">6</mn><mi mathvariant="normal" xmlns="">H–SiC</mi><mtext xmlns="">(0001)-(3×3)</mtext></math> reconstructed surface

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Writing of high-density patterned perpendicular media with a conventional longitudinal recording head

M. Albrecht; A. Moser; C. T. Rettner; S. Anders; T. Thomson; B. D. Terris

Appl. Phys. Lett. 80, 3409–3411 (2002) https://doi.org/10.1063/1.1476062

Abstract

View articletitled, Writing of high-density patterned perpendicular media with a conventional longitudinal recording head

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Mapping strain fields in ultrathin bonded Si wafers by x-ray scattering

M. Nielsen; M. Poulsen; O. Bunk; C. Kumpf; R. Feidenhans’l; R. L. Johnson; F. Jensen; F. Grey

Appl. Phys. Lett. 80, 3412–3414 (2002) https://doi.org/10.1063/1.1476702

Abstract

View articletitled, Mapping strain fields in ultrathin bonded Si wafers by x-ray scattering

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Absorption spectra and chirality of single-walled 4 Å carbon nanotubes

WanZhen Liang; GuanHua Chen; Zhaoming Li; Zi-Kang Tang

Appl. Phys. Lett. 80, 3415–3417 (2002) https://doi.org/10.1063/1.1478155

Abstract

View articletitled, Absorption spectra and chirality of single-walled 4 Å carbon nanotubes

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DEVICE PHYSICS

High-sensitivity quantum Hall far-infrared photodetector integrated with log-periodic antenna

Y. Kawaguchi; K. Hirakawa; S. Komiyama

Appl. Phys. Lett. 80, 3418–3420 (2002) https://doi.org/10.1063/1.1476061

Abstract

View articletitled, High-sensitivity quantum Hall far-infrared photodetector integrated with log-periodic antenna

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Charge retention in metal–oxide–semiconductor capacitors on SiC used as nonvolatile-memory elements

Sima Dimitrijev; Kuan Yew Cheong; Jisheng Han; H. Barry Harrison

Appl. Phys. Lett. 80, 3421–3423 (2002) https://doi.org/10.1063/1.1476060

Abstract

View articletitled, Charge retention in metal–oxide–semiconductor capacitors on SiC used as nonvolatile-memory elements

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Piezoelectric and electrostrictive strain behavior of Ce-doped ${BaTiO}_{3}$ ceramics

Chen Ang; Zhi Yu; Zhi Jing; Ruyan Guo; A. S. Bhalla; L. E. Cross

Appl. Phys. Lett. 80, 3424–3426 (2002) https://doi.org/10.1063/1.1473871

Abstract

View articletitled, Piezoelectric and electrostrictive strain behavior of Ce-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BaTiO</mi><mrow><mn>3</mn></mrow></msub></math> ceramics

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Tunable, monochromatic x rays using the internal beam of a betatron

V. V. Kaplin; S. R. Uglov; O. F. Bulaev; V. J. Goncharov; A. A. Voronin; M. A. Piestrup; C. K. Gary; N. N. Nasonov; M. K. Fuller

Appl. Phys. Lett. 80, 3427–3429 (2002) https://doi.org/10.1063/1.1475360

Abstract

View articletitled, Tunable, monochromatic x rays using the internal beam of a betatron

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Influence of temperature and drive current on degradation mechanisms in organic light-emitting diodes

Masahiko Ishii; Yasunori Taga

Appl. Phys. Lett. 80, 3430–3432 (2002) https://doi.org/10.1063/1.1476704

Abstract

View articletitled, Influence of temperature and drive current on degradation mechanisms in organic light-emitting diodes

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Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor

W. Knap; Y. Deng; S. Rumyantsev; J.-Q. Lü; M. S. Shur; C. A. Saylor; L. C. Brunel

Appl. Phys. Lett. 80, 3433–3435 (2002) https://doi.org/10.1063/1.1473685

Abstract

View articletitled, Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor

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Effects of wet-oxidation treatment on ${Al}_{0.45} {Ga}_{0.55} As/GaAs$ graded-like superlattice-emitter bipolar transistor with low turn-on voltage

Wen-Shiung Lour; Yen-Wei Wu; Shih-Wei Tan; Ming-Kwen Tsai; Ying-Jay Yang

Appl. Phys. Lett. 80, 3436–3438 (2002) https://doi.org/10.1063/1.1473861

Abstract

View articletitled, Effects of wet-oxidation treatment on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mtext>0.45</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>0.55</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As/GaAs</mi></math> graded-like superlattice-emitter bipolar transistor with low turn-on voltage

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Electrical properties of amorphous silicon carbide films

N. Biswas; X. Wang; S. Gangopadhyay

Appl. Phys. Lett. 80, 3439–3441 (2002) https://doi.org/10.1063/1.1476389

Abstract

View articletitled, Electrical properties of amorphous silicon carbide films

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INTERDISCIPLINARY AND GENERAL PHYSICS

Near-field ultrasonic scattering from surface-breaking cracks

James L. Blackshire; Shamachary Sathish

Appl. Phys. Lett. 80, 3442–3444 (2002) https://doi.org/10.1063/1.1476722

Abstract

View articletitled, Near-field ultrasonic scattering from surface-breaking cracks

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Solid-state soft actuator exhibiting large electromechanical effect

Mohsen Shahinpoor; Kwang J. Kim

Appl. Phys. Lett. 80, 3445–3447 (2002) https://doi.org/10.1063/1.1477276

Abstract

View articletitled, Solid-state soft actuator exhibiting large electromechanical effect

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Surface-force measurement with a laser-trapped microprobe in solution

Taisuke Ota; Tadao Sugiura; Satoshi Kawata

Appl. Phys. Lett. 80, 3448–3450 (2002) https://doi.org/10.1063/1.1468267

Abstract

View articletitled, Surface-force measurement with a laser-trapped microprobe in solution

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

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