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LASERS, OPTICS, AND OPTOELECTRONICS

Short-wavelength (λ<2 μm) intersubband absorption dynamics in ZnSe/BeTe quantum wells

R. Akimoto; K. Akita; F. Sasaki; S. Kobayashi

Appl. Phys. Lett. 80, 2433–2435 (2002) https://doi.org/10.1063/1.1468261

Abstract

View articletitled, Short-wavelength (λ<2 μm) intersubband absorption dynamics in ZnSe/BeTe quantum wells

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Improved efficiency of light-emitting diodes based on polyfluorene blends upon insertion of a $poly (p -phenylene$ vinylene) electron- confinement layer

J. Morgado; R. H. Friend; F. Cacialli

Appl. Phys. Lett. 80, 2436–2438 (2002) https://doi.org/10.1063/1.1467981

Abstract

View articletitled, Improved efficiency of light-emitting diodes based on polyfluorene blends upon insertion of a <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">poly</mi><mi xmlns="">(p</mi><mi mathvariant="normal" xmlns="">-phenylene</mi></math> vinylene) electron- confinement layer

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Optical recording using smectic layer rotation in ferroelectric liquid crystal

Keizo Nakayama; Junji Ohtsubo; Masanori Ozaki; Katsumi Yoshino

Appl. Phys. Lett. 80, 2439–2441 (2002) https://doi.org/10.1063/1.1467972

Abstract

View articletitled, Optical recording using smectic layer rotation in ferroelectric liquid crystal

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Optical thin films consisting of nanoscale laminated layers

Shin-ichi Zaitsu; Takahisa Jitsuno; Masahiro Nakatsuka; Tatsuhiko Yamanaka; Shinji Motokoshi

Appl. Phys. Lett. 80, 2442–2444 (2002) https://doi.org/10.1063/1.1467622

Abstract

View articletitled, Optical thin films consisting of nanoscale laminated layers

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Low threshold 1.2 μm InGaAs quantum well lasers grown under low As/III ratio

T. Takeuchi; Y.-L. Chang; A. Tandon; D. Bour; S. Corzine; R. Twist; M. Tan; H.-C. Luan

Appl. Phys. Lett. 80, 2445–2447 (2002) https://doi.org/10.1063/1.1467697

Abstract

View articletitled, Low threshold 1.2 μm InGaAs quantum well lasers grown under low As/III ratio

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Quaternary GaInAsN with high In content: Dependence of band gap energy on N content

D. Serries; T. Geppert; P. Ganser; M. Maier; K. Köhler; N. Herres; J. Wagner

Appl. Phys. Lett. 80, 2448–2450 (2002) https://doi.org/10.1063/1.1467612

Abstract

View articletitled, Quaternary GaInAsN with high In content: Dependence of band gap energy on N content

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Theoretical investigation of laser gain in AlGaInN quaternary quantum wells

W. W. Chow; H. C. Schneider; A. J. Fischer; A. A. Allerman

Appl. Phys. Lett. 80, 2451–2453 (2002) https://doi.org/10.1063/1.1465523

Abstract

View articletitled, Theoretical investigation of laser gain in AlGaInN quaternary quantum wells

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Dual-frequency quantum-cascade terahertz emitter

V. M. Menon; W. D. Goodhue; A. S. Karakashian; A. Naweed; J. Plant; L. R. Ram-Mohan; A. Gatesman; V. Badami; J. Waldman

Appl. Phys. Lett. 80, 2454–2456 (2002) https://doi.org/10.1063/1.1467698

Abstract

View articletitled, Dual-frequency quantum-cascade terahertz emitter

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PLASMAS AND ELECTRICAL DISCHARGES

Angularly resolved measurements of ion energy of vacuum arc plasmas

André Anders; George Yu. Yushkov

Appl. Phys. Lett. 80, 2457–2459 (2002) https://doi.org/10.1063/1.1468271

Abstract

View articletitled, Angularly resolved measurements of ion energy of vacuum arc plasmas

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Microscopic structure and optical properties of ${GaAs}_{1−x} N_{x} / GaAs (001)$ interface grown by metalorganic vapor phase epitaxy

H. Dumont; L. Auvray; Y. Monteil; C. Bondoux; L. Largeau; G. Patriarche

Appl. Phys. Lett. 80, 2460–2462 (2002) https://doi.org/10.1063/1.1468272

Abstract

View articletitled, Microscopic structure and optical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">GaAs</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi>x</mi></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">GaAs</mi><mtext xmlns="">(001)</mtext></math> interface grown by metalorganic vapor phase epitaxy

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Effect of film thickness on hydrogenated amorphous silicon grown with hydrogen diluted silane

P. Danesh; B. Pantchev; D. Grambole; B. Schmidt

Appl. Phys. Lett. 80, 2463–2465 (2002) https://doi.org/10.1063/1.1467705

Abstract

View articletitled, Effect of film thickness on hydrogenated amorphous silicon grown with hydrogen diluted silane

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High-frequency dispersion of ultrasonic velocity and attenuation of single-crystal $0.72 Pb ({Mg}_{1/3} {Nb}_{2/3}) O_{3} –0.28 {PbTiO}_{3}$ with engineered domain structures

Wenhua Jiang; Wenwu Cao; Pengdi Han

Appl. Phys. Lett. 80, 2466–2468 (2002) https://doi.org/10.1063/1.1468265

Abstract

View articletitled, High-frequency dispersion of ultrasonic velocity and attenuation of single-crystal <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">0.72 </mtext><mi mathvariant="normal" xmlns="">Pb</mi><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Mg</mi><mrow><mtext>1/3</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Nb</mi><mrow><mtext>2/3</mtext></mrow></msub><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub><mtext xmlns="">–0.28 </mtext><msub xmlns=""><mi mathvariant="normal">PbTiO</mi><mrow><mn>3</mn></mrow></msub></math> with engineered domain structures

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Mg-rich precipitates in the p-type doping of InGaN-based laser diodes

M. Hansen; L. F. Chen; S. H. Lim; S. P. DenBaars; J. S. Speck

Appl. Phys. Lett. 80, 2469–2471 (2002) https://doi.org/10.1063/1.1467704

Abstract

View articletitled, Mg-rich precipitates in the p-type doping of InGaN-based laser diodes

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Si-doped cubic GaN grown on a Si(001) substrate with a thin flat SiC buffer layer

D. Wang; S. Yoshida; M. Ichikawa

Appl. Phys. Lett. 80, 2472–2474 (2002) https://doi.org/10.1063/1.1467971

Abstract

View articletitled, Si-doped cubic GaN grown on a Si(001) substrate with a thin flat SiC buffer layer

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Effect of $H_{2}$ on nitrogen incorporation in the metalorganic chemical vapor deposition of ${GaAs}_{1−y} N_{y}$ $(0⩽y⩽0.08)$

B. F. Moody; P. T. Barletta; N. A. El-Masry; J. C. Roberts; M. E. Aumer; S. F. LeBoeuf; S. M. Bedair

Appl. Phys. Lett. 80, 2475–2477 (2002) https://doi.org/10.1063/1.1464225

Abstract

View articletitled, Effect of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">H</mi><mrow><mn>2</mn></mrow></msub></math> on nitrogen incorporation in the metalorganic chemical vapor deposition of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">GaAs</mi><mrow><mtext>1−y</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi>y</mi></mrow></msub></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(0⩽y⩽0.08)</mtext></math>

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ZrNbCuNiAl bulk metallic glass matrix composites containing dendritic bcc phase precipitates

U. Kühn; J. Eckert; N. Mattern; L. Schultz

Appl. Phys. Lett. 80, 2478–2480 (2002) https://doi.org/10.1063/1.1467707

Abstract

View articletitled, ZrNbCuNiAl bulk metallic glass matrix composites containing dendritic bcc phase precipitates

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Strain-induced anisotropic Ge diffusion in SiGe/Si superlattices

Y. S. Lim; J. Y. Lee; H. S. Kim; D. W. Moon

Appl. Phys. Lett. 80, 2481–2483 (2002) https://doi.org/10.1063/1.1465500

Abstract

View articletitled, Strain-induced anisotropic Ge diffusion in SiGe/Si superlattices

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Phonon wave-packet dynamics at semiconductor interfaces by molecular-dynamics simulation

P. K. Schelling; S. R. Phillpot; P. Keblinski

Appl. Phys. Lett. 80, 2484–2486 (2002) https://doi.org/10.1063/1.1465106

Abstract

View articletitled, Phonon wave-packet dynamics at semiconductor interfaces by molecular-dynamics simulation

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Interaction of electron and hole plasma with coherent longitudinal optical phonons in GaAs

Y.-M. Chang

Appl. Phys. Lett. 80, 2487–2489 (2002) https://doi.org/10.1063/1.1466535

Abstract

View articletitled, Interaction of electron and hole plasma with coherent longitudinal optical phonons in GaAs

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Normal-incidence voltage-tunable middle- and long-wavelength infrared photoresponse in self-assembled InAs quantum dots

Zhonghui Chen; Eui-Tae Kim; Anupam Madhukar

Appl. Phys. Lett. 80, 2490–2492 (2002) https://doi.org/10.1063/1.1467974

Abstract

View articletitled, Normal-incidence voltage-tunable middle- and long-wavelength infrared photoresponse in self-assembled InAs quantum dots

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Polarization charges at spontaneously ordered (In, Ga)P/GaAs interfaces

P. Krispin; A. Knauer; S. Gramlich

Appl. Phys. Lett. 80, 2493–2495 (2002) https://doi.org/10.1063/1.1467978

Abstract

View articletitled, Polarization charges at spontaneously ordered (In, Ga)P/GaAs interfaces

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Room-temperature 1.54-μm electroluminescence from the Au/nanometer $({SiO}_{2} : Er / Si / {SiO}_{2} : Er {)/n}^{+} - Si$ structure

Y. Chen; G. Z. Ran; L. Dai; B. R. Zhang; G. G. Qin; Z. C. Ma; W. H. Zong

Appl. Phys. Lett. 80, 2496–2498 (2002) https://doi.org/10.1063/1.1467623

Abstract

View articletitled, Room-temperature 1.54-μm electroluminescence from the Au/nanometer <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">:</mi><mi mathvariant="normal" xmlns="">Er</mi><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">Si</mi><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">:</mi><mi mathvariant="normal" xmlns="">Er</mi><msup xmlns=""><mi>)/n</mi><mrow><mi>+</mi></mrow></msup><mi xmlns="">-</mi><mi mathvariant="normal" xmlns="">Si</mi></math> structure

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Interface-controlled gate of GaAs metal–semiconductor field-effect transistor

Min-Gu Kang; Hyung-Ho Park; Haecheon Kim

Appl. Phys. Lett. 80, 2499–2501 (2002) https://doi.org/10.1063/1.1467975

Abstract

View articletitled, Interface-controlled gate of GaAs metal–semiconductor field-effect transistor

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Memory effects related to deep levels in metal–oxide–semiconductor structure with nanocrystalline Si

Young Hae Kwon; C. J. Park; W. C. Lee; D. J. Fu; Y. Shon; T. W. Kang; C. Y. Hong; H. Y. Cho; Kang L. Wang

Appl. Phys. Lett. 80, 2502–2504 (2002) https://doi.org/10.1063/1.1467617

Abstract

View articletitled, Memory effects related to deep levels in metal–oxide–semiconductor structure with nanocrystalline Si

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Influence of the hole population on the transient reflectivity signal of annealed low-temperature-grown GaAs

V. Ortiz; J. Nagle; A. Alexandrou

Appl. Phys. Lett. 80, 2505–2507 (2002) https://doi.org/10.1063/1.1463209

Abstract

View articletitled, Influence of the hole population on the transient reflectivity signal of annealed low-temperature-grown GaAs

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Transport-to-quantum lifetime ratios in AlGaN/GaN heterostructures

L. Hsu; W. Walukiewicz

Appl. Phys. Lett. 80, 2508–2510 (2002) https://doi.org/10.1063/1.1468260

Abstract

View articletitled, Transport-to-quantum lifetime ratios in AlGaN/GaN heterostructures

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Cross sectional studies of buried semiconductor interfaces by means of photoemission microscopy

F. Barbo; M. Bertolo; A. Bianco; G. Cautero; S. Fontana; T. K. Johal; S. La Rosa; R. C. Purandare; N. Svetchnikov; A. Franciosi; D. Orani; M. Piccin; S. Rubini; R. Cimino

Appl. Phys. Lett. 80, 2511–2513 (2002) https://doi.org/10.1063/1.1468264

Abstract

View articletitled, Cross sectional studies of buried semiconductor interfaces by means of photoemission microscopy

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Impact of atomic-layer-deposited TiN on the gate oxide quality of ${W/TiN/SiO}_{2} / Si$ metal–oxide–semiconductor structures

Dae-Gyu Park; Kwan-Yong Lim; Heung-Jae Cho; Tae-Ho Cha; In-Seok Yeo; Jae-Sung Roh; Jin Won Park

Appl. Phys. Lett. 80, 2514–2516 (2002) https://doi.org/10.1063/1.1468273

Abstract

View articletitled, Impact of atomic-layer-deposited TiN on the gate oxide quality of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">W/TiN/SiO</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">Si</mi></math> metal–oxide–semiconductor structures

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N-type organic thin-film transistor with high field-effect mobility based on a ${N,N}^{'}$ -dialkyl-3,4,9,10-perylene tetracarboxylic diimide derivative

Patrick R. L. Malenfant; Christos D. Dimitrakopoulos; Jeffrey D. Gelorme; Laura L. Kosbar; Teresita O. Graham; Alessandro Curioni; Wanda Andreoni

Appl. Phys. Lett. 80, 2517–2519 (2002) https://doi.org/10.1063/1.1467706

Abstract

View articletitled, N-type organic thin-film transistor with high field-effect mobility based on a <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">N,N</mi><mrow><mi>′</mi></mrow></msup></math>-dialkyl-3,4,9,10-perylene tetracarboxylic diimide derivative

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Enhancement of photoluminescence by microdisk formation from Si/Ge/Si single quantum wells

Suk-Ho Choi; Jung Nam Kim; Hea Young Kim; Young-Kyu Hong; Ja-Yong Koo; JangHyeon Seok; JaeYon Kim

Appl. Phys. Lett. 80, 2520–2522 (2002) https://doi.org/10.1063/1.1468918

Abstract

View articletitled, Enhancement of photoluminescence by microdisk formation from Si/Ge/Si single quantum wells

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MAGNETISM AND SUPERCONDUCTIVITY

Periodic elastic domains of coexisting phases in epitaxial MnAs films on GaAs

T. Plake; M. Ramsteiner; V. M. Kaganer; B. Jenichen; M. Kästner; L. Däweritz; K. H. Ploog

Appl. Phys. Lett. 80, 2523–2525 (2002) https://doi.org/10.1063/1.1467699

Abstract

View articletitled, Periodic elastic domains of coexisting phases in epitaxial MnAs films on GaAs

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Polaronic quasiparticle injection in organic copper (II) ${phthalocyanine/Bi}_{2} {Sr}_{2} {CaCu}_{2} O_{8+δ}$ tunnel junctions

Sunmi Kim; Jungyoon E; Kiejin Lee; Takayuki Ishibashi; Katsuaki Sato; Barry Friedman

Appl. Phys. Lett. 80, 2526–2528 (2002) https://doi.org/10.1063/1.1467703

Abstract

View articletitled, Polaronic quasiparticle injection in organic copper (II) <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">phthalocyanine/Bi</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">CaCu</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mtext>8+δ</mtext></mrow></msub></math> tunnel junctions

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Simplified analysis of two-layer antiferromagnetically coupled media

H. J. Richter; Er. Girt; H. Zhou

Appl. Phys. Lett. 80, 2529–2531 (2002) https://doi.org/10.1063/1.1467977

Abstract

View articletitled, Simplified analysis of two-layer antiferromagnetically coupled media

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Giant magnetoimpedance in FeAg granular alloys

J. M. Soares; J. H. de Araújo; F. A. O. Cabral; T. Dumelow; F. L. A. Machado; A. E. P. de Araújo

Appl. Phys. Lett. 80, 2532–2534 (2002) https://doi.org/10.1063/1.1468274

Abstract

View articletitled, Giant magnetoimpedance in FeAg granular alloys

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System for fast time-resolved measurements of c-axis quasiparticle conductivity in intrinsic Josephson junctions of ${Bi}_{2} {Sr}_{2} {CaCu}_{2} O_{8+δ}$

J. C. Fenton; P. J. Thomas; G. Yang; C. E. Gough

Appl. Phys. Lett. 80, 2535–2537 (2002) https://doi.org/10.1063/1.1470261

Abstract

View articletitled, System for fast time-resolved measurements of c-axis quasiparticle conductivity in intrinsic Josephson junctions of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Bi</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">CaCu</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mtext>8+δ</mtext></mrow></msub></math>

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DIELECTRICS AND FERROELECTRICITY

Oxygen-related dielectric relaxation and leakage characteristics of $Pt /(Ba, Sr) {TiO}_{3} / Pt$ thin-film capacitors

Mingrong Shen; Zhenggao Dong; Zhaoqiang Gan; Shuibing Ge; Wenwu Cao

Appl. Phys. Lett. 80, 2538–2540 (2002) https://doi.org/10.1063/1.1468259

Abstract

View articletitled, Oxygen-related dielectric relaxation and leakage characteristics of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Pt</mi><mi xmlns="">/(</mi><mi mathvariant="normal" xmlns="">Ba</mi><mi xmlns="">,</mi><mi mathvariant="normal" xmlns="">Sr</mi><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">Pt</mi></math> thin-film capacitors

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Epitaxial Y-stabilized ${ZrO}_{2}$ films on silicon: Dynamic growth process and interface structure

S. J. Wang; C. K. Ong

Appl. Phys. Lett. 80, 2541–2543 (2002) https://doi.org/10.1063/1.1467970

Abstract

View articletitled, Epitaxial Y-stabilized <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">ZrO</mi><mrow><mn>2</mn></mrow></msub></math> films on silicon: Dynamic growth process and interface structure

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Stable scattering-matrix method for surface acoustic waves in piezoelectric multilayers

Th. Pastureaud; V. Laude; S. Ballandras

Appl. Phys. Lett. 80, 2544–2546 (2002) https://doi.org/10.1063/1.1467620

Abstract

View articletitled, Stable scattering-matrix method for surface acoustic waves in piezoelectric multilayers

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Temperature dependence of electrical properties of $N_{2} O / O_{2} / N_{2} O$ -grown oxides on strained SiGe

S. K. Samanta; S. Chatterjee; L. K. Bera; H. D. Banerjee; C. K. Maiti

Appl. Phys. Lett. 80, 2547–2549 (2002) https://doi.org/10.1063/1.1469221

Abstract

View articletitled, Temperature dependence of electrical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mn>2</mn></mrow></msub><mi mathvariant="normal" xmlns="">O</mi><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mn>2</mn></mrow></msub><mi mathvariant="normal" xmlns="">O</mi></math>-grown oxides on strained SiGe

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NANOSCALE SCIENCE AND DESIGN

Gas-phase thermodynamic models of nitrogen-induced nanocrystallinity in chemical vapor-deposited diamond

Raymond B. Corvin; Joseph G. Harrison; Shane A. Catledge; Yogesh K. Vohra

Appl. Phys. Lett. 80, 2550–2552 (2002) https://doi.org/10.1063/1.1467618

Abstract

View articletitled, Gas-phase thermodynamic models of nitrogen-induced nanocrystallinity in chemical vapor-deposited diamond

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Raman scattering and thermogravimetric analysis of iodine-doped multiwall carbon nanotubes

Weiya Zhou; Sishen Xie; Lianfeng Sun; Dongsheng Tang; Yubao Li; Zuqin Liu; Lijie Ci; Xiaoping Zou; Gang Wang; Pingheng Tan; Xiaoli Dong; Bo Xu; Boru Zhao

Appl. Phys. Lett. 80, 2553–2555 (2002) https://doi.org/10.1063/1.1468269

Abstract

View articletitled, Raman scattering and thermogravimetric analysis of iodine-doped multiwall carbon nanotubes

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Local electrostatic potential and process-induced boron redistribution in patterned Si/SiGe/Si heterostructures

A. Orchowski; W.-D. Rau; H. Rücker; B. Heinemann; P. Schwander; B. Tillack; A. Ourmazd

Appl. Phys. Lett. 80, 2556–2558 (2002) https://doi.org/10.1063/1.1467712

Abstract

View articletitled, Local electrostatic potential and process-induced boron redistribution in patterned Si/SiGe/Si heterostructures

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Hybridized boron–carbon nitride fibrous nanostructures on Ni substrates

Yoke Khin Yap; Masashi Yoshimura; Yusuke Mori; Takatomo Sasaki

Appl. Phys. Lett. 80, 2559–2561 (2002) https://doi.org/10.1063/1.1468270

Abstract

View articletitled, Hybridized boron–carbon nitride fibrous nanostructures on Ni substrates

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Conceptual design of nanostructures for efficient photoinduced phase transitions

Tohru Kawamoto; Shuji Abe

Appl. Phys. Lett. 80, 2562–2564 (2002) https://doi.org/10.1063/1.1468263

Abstract

View articletitled, Conceptual design of nanostructures for efficient photoinduced phase transitions

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Nanopatterning of alkyl monolayers covalently bound to Si(111) with an atomic force microscope

Masato Ara; Harald Graaf; Hirokazu Tada

Appl. Phys. Lett. 80, 2565–2567 (2002) https://doi.org/10.1063/1.1467973

Abstract

View articletitled, Nanopatterning of alkyl monolayers covalently bound to Si(111) with an atomic force microscope

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Enhanced tunneling across nanometer-scale metal–semiconductor interfaces

G. D. J. Smit; S. Rogge; T. M. Klapwijk

Appl. Phys. Lett. 80, 2568–2570 (2002) https://doi.org/10.1063/1.1467980

Abstract

View articletitled, Enhanced tunneling across nanometer-scale metal–semiconductor interfaces

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Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells

Yen-Sheng Lin; Kung-Jen Ma; Cheng Hsu; Yi-Yin Chung; Chih-Wen Liu; Shih-Wei Feng; Yung-Chen Cheng; C. C. Yang; Ming-Hua Mao; Hui-Wen Chuang; Cheng-Ta Kuo; Jian-Shihn Tsang; Thomas E. Weirich

Appl. Phys. Lett. 80, 2571–2573 (2002) https://doi.org/10.1063/1.1467983

Abstract

View articletitled, Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells

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Controlled placement of an individual carbon nanotube onto a microelectromechanical structure

P. A. Williams; S. J. Papadakis; M. R. Falvo; A. M. Patel; M. Sinclair; A. Seeger; A. Helser; R. M. Taylor, II; S. Washburn; R. Superfine

Appl. Phys. Lett. 80, 2574–2576 (2002) https://doi.org/10.1063/1.1467701

Abstract

View articletitled, Controlled placement of an individual carbon nanotube onto a microelectromechanical structure

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Few-electron filling effect in laterally coupled spherical InAs/GaAs quantum-dot system

Zhen-Hong Dai; Li-De Zhang; Jin-Zuo Sun; Zuo-Hong Li; Shi-Yong Huang

Appl. Phys. Lett. 80, 2577–2579 (2002) https://doi.org/10.1063/1.1468262

Abstract

View articletitled, Few-electron filling effect in laterally coupled spherical InAs/GaAs quantum-dot system

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Nanoparticle-templated carbon nanotube ring nucleus formation

James R. Hester; Oleg A. Louchev

Appl. Phys. Lett. 80, 2580–2582 (2002) https://doi.org/10.1063/1.1465112

Abstract

View articletitled, Nanoparticle-templated carbon nanotube ring nucleus formation

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Exchange-coupled FePt nanoparticle assembly

Hao Zeng; Shouheng Sun; T. S. Vedantam; J. P. Liu; Z.-R. Dai; Z.-L. Wang

Appl. Phys. Lett. 80, 2583–2585 (2002) https://doi.org/10.1063/1.1467976

Abstract

View articletitled, Exchange-coupled FePt nanoparticle assembly

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Microscopic surface photovoltage spectroscopy

S. Saraf; R. Shikler; J. Yang; Y. Rosenwaks

Appl. Phys. Lett. 80, 2586–2588 (2002) https://doi.org/10.1063/1.1468275

Abstract

View articletitled, Microscopic surface photovoltage spectroscopy

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Effect of substitutional atoms in the tip on field-emission properties of capped carbon nanotubes

Gang Zhang; Wenhui Duan; Binglin Gu

Appl. Phys. Lett. 80, 2589–2591 (2002) https://doi.org/10.1063/1.1469213

Abstract

View articletitled, Effect of substitutional atoms in the tip on field-emission properties of capped carbon nanotubes

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Mechanism of atomic force microscopy anodization lithography on a mixed Langmuir–Blodgette resist of palmitic acid and hexadecylamine on silicon

Sang Jung Ahn; Yun Kyeong Jang; Haeseong Lee; Haiwon Lee

Appl. Phys. Lett. 80, 2592–2594 (2002) https://doi.org/10.1063/1.1467984

Abstract

View articletitled, Mechanism of atomic force microscopy anodization lithography on a mixed Langmuir–Blodgette resist of palmitic acid and hexadecylamine on silicon

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Adsorbate-induced one-dimensional long-range modulation of an epitaxial insulator film

W. Ernst; M. Eichmann; H. Pfnür; K.-L. Jonas; V. von Oeynhausen; K. H. Meiwes-Broer

Appl. Phys. Lett. 80, 2595–2597 (2002) https://doi.org/10.1063/1.1467624

Abstract

View articletitled, Adsorbate-induced one-dimensional long-range modulation of an epitaxial insulator film

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DEVICE PHYSICS

Interdependence of absorber composition and recombination mechanism in $Cu (In,Ga)(Se,S)_{2}$ heterojunction solar cells

M. Turcu; O. Pakma; U. Rau

Appl. Phys. Lett. 80, 2598–2600 (2002) https://doi.org/10.1063/1.1467621

Abstract

View articletitled, Interdependence of absorber composition and recombination mechanism in <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Cu</mi><mi xmlns="">(</mi><mi mathvariant="normal" xmlns="">In,Ga</mi><mi xmlns="">)(</mi><mi mathvariant="normal" xmlns="">Se,S</mi><msub xmlns=""><mi>)</mi><mrow><mn>2</mn></mrow></msub></math> heterojunction solar cells

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INTERDISCIPLINARY AND GENERAL PHYSICS

Ratchet device with broken friction symmetry

Bengt Nordén; Yaroslav Zolotaryuk; Peter L. Christiansen; Alexander V. Zolotaryuk

Appl. Phys. Lett. 80, 2601–2603 (2002) https://doi.org/10.1063/1.1468900

Abstract

View articletitled, Ratchet device with broken friction symmetry

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Nucleation of copper on TiN and ${SiO}_{2}$ from the reaction of hexafluoroacetylacetonate copper(I) trimethylvinylsilane

P. F. Ma; T. W. Schroeder; J. R. Engstrom

Appl. Phys. Lett. 80, 2604–2606 (2002) https://doi.org/10.1063/1.1469687

Abstract

View articletitled, Nucleation of copper on TiN and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> from the reaction of hexafluoroacetylacetonate copper(I) trimethylvinylsilane

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Determining the profile of textured membranes by the alpha particle energy loss method

C. Kaiser; Y. Levy; T. Tiedje; Jeff F. Young; I. Kelson

Appl. Phys. Lett. 80, 2607–2609 (2002) https://doi.org/10.1063/1.1468268

Abstract

View articletitled, Determining the profile of textured membranes by the alpha particle energy loss method

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ERRATA

Erratum: “Evidence for bandedge lasing in a two-dimensional photonic bandgap polymer laser” [Appl. Phys. Lett. 80, 734 (2002)]

N. Moll; R. F. Mahrt; C. Bauer; H. Giessen; B. Schnabel; E. B. Kley; U. Scherf

Appl. Phys. Lett. 80, 2610 (2002) https://doi.org/10.1063/1.1467708

Abstract

View articletitled, Erratum: “Evidence for bandedge lasing in a two-dimensional photonic bandgap polymer laser” [Appl. Phys. Lett. 80, 734 (2002)]

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Erratum: “Internally shunted sputtered NbN Josephson junctions with a TaNx barrier for nonlatching logic applications” [Appl. Phy. Lett. 78, 99 (2001)]

Anupama B. Kaul; Stephen R. Whiteley; Theodore Van Duzer; Lei Yu; Nathan Newman; J. M. Rowell

Appl. Phys. Lett. 80, 2611 (2002) https://doi.org/10.1063/1.1467713

Abstract

View articletitled, Erratum: “Internally shunted sputtered NbN Josephson junctions with a TaNx barrier for nonlatching logic applications” [Appl. Phy. Lett. 78, 99 (2001)]

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

ERRATA

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