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Issues
18 March 2002
ISSN 0003-6951
EISSN 1077-3118
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS
Pulse broadening in a Ne–CuBr–Zn laser system by optical resonance pumping
Appl. Phys. Lett. 80, 1859–1861 (2002)
https://doi.org/10.1063/1.1458074
Broadband tuning and dual-spectral/temporal outputs from a nonresonantly injection-seeded diode laser
Appl. Phys. Lett. 80, 1862–1863 (2002)
https://doi.org/10.1063/1.1459488
Room-temperature emission of GaAs/AlGaAs superlattice quantum-cascade lasers at 12.6 μm
Appl. Phys. Lett. 80, 1864–1866 (2002)
https://doi.org/10.1063/1.1461055
Microsecond carrier lifetimes in InGaAsP quantum wells emitting at λ=1.5 μm
Appl. Phys. Lett. 80, 1870–1872 (2002)
https://doi.org/10.1063/1.1459490
1-GHz-repetition-rate femtosecond optical parametric oscillator
Appl. Phys. Lett. 80, 1873–1875 (2002)
https://doi.org/10.1063/1.1461870
Wavelength modulation spectroscopy of single quantum dots
Appl. Phys. Lett. 80, 1876–1878 (2002)
https://doi.org/10.1063/1.1461071
Real index-guided InGaAlP red lasers with buried tunnel junctions
Appl. Phys. Lett. 80, 1882–1884 (2002)
https://doi.org/10.1063/1.1459763
Shift of the photonic band gap in two photonic crystal/liquid crystal composites
Appl. Phys. Lett. 80, 1885–1887 (2002)
https://doi.org/10.1063/1.1461885
Lateral color integration on rare-earth-doped GaN electroluminescent thin films
Appl. Phys. Lett. 80, 1888–1890 (2002)
https://doi.org/10.1063/1.1461884
Efficient polymer light-emitting diodes using conjugated polymer blends
Appl. Phys. Lett. 80, 1891–1893 (2002)
https://doi.org/10.1063/1.1459770
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
Thermodynamic stability of high-K dielectric metal oxides and in contact with Si and
Maciej Gutowski; John E. Jaffe; Chun-Li Liu; Matt Stoker; Rama I. Hegde; Raghaw S. Rai; Philip J. Tobin
Appl. Phys. Lett. 80, 1897–1899 (2002)
https://doi.org/10.1063/1.1458692
Growth and characterization of thin films with band-gap energies in the red-blue portion of the visible spectrum
Jairo A. Cardona-Bedoya; Fernando Gordillo-Delgado; Orlando Zelaya-Angel; Alfredo Cruz-Orea; Julio G. Mendoza-Álvarez
Appl. Phys. Lett. 80, 1900–1902 (2002)
https://doi.org/10.1063/1.1454209
On the effective thermal diffusivity of fiber-reinforced composites
Appl. Phys. Lett. 80, 1903–1905 (2002)
https://doi.org/10.1063/1.1461422
Microstructures and mechanical properties of tungsten wire/particle reinforced metallic glass matrix composites
Appl. Phys. Lett. 80, 1906–1908 (2002)
https://doi.org/10.1063/1.1459766
Nitrogen-related local vibrational modes in ZnO:N
A. Kaschner; U. Haboeck; Martin Strassburg; Matthias Strassburg; G. Kaczmarczyk; A. Hoffmann; C. Thomsen; A. Zeuner; H. R. Alves; D. M. Hofmann; B. K. Meyer
Appl. Phys. Lett. 80, 1909–1911 (2002)
https://doi.org/10.1063/1.1461903
Band gap changes of GaN shocked to 13 GPa
Appl. Phys. Lett. 80, 1912–1914 (2002)
https://doi.org/10.1063/1.1455148
Direct crystallization of the peritectic phase by undercooling of bulk alloy melts
Appl. Phys. Lett. 80, 1915–1917 (2002)
https://doi.org/10.1063/1.1461430
Phase stabilities of “morphotropic” phases in single crystals
Appl. Phys. Lett. 80, 1918–1920 (2002)
https://doi.org/10.1063/1.1461902
Growth of single-crystal film on Ni(111) surface
Appl. Phys. Lett. 80, 1921–1923 (2002)
https://doi.org/10.1063/1.1461052
Time-resolved and time-integrated photoluminescence in ZnO epilayers grown on by metalorganic vapor phase epitaxy
Appl. Phys. Lett. 80, 1924–1926 (2002)
https://doi.org/10.1063/1.1461051
Nanoencapsulation of ZnS:Ag particulates with indium tin oxide for field emission displays
Appl. Phys. Lett. 80, 1927–1929 (2002)
https://doi.org/10.1063/1.1453477
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
Electrical activation studies of GaN implanted with Si from low to high dose
Appl. Phys. Lett. 80, 1930–1932 (2002)
https://doi.org/10.1063/1.1458694
GaN tunnel junction as a current aperture in a blue surface-emitting light-emitting diode
Appl. Phys. Lett. 80, 1933–1935 (2002)
https://doi.org/10.1063/1.1459487
Ultrafast optical nonlinearity of low-temperature-grown GaInAs/AlInAs quantum wells at wavelengths around
Appl. Phys. Lett. 80, 1936–1938 (2002)
https://doi.org/10.1063/1.1461429
Explanation for the temperature dependence of the gate current in metal-oxide-semiconductor transistors
Appl. Phys. Lett. 80, 1939–1941 (2002)
https://doi.org/10.1063/1.1461431
Local vibrational modes of carbon in GaSb and GaAsSb
Appl. Phys. Lett. 80, 1942–1944 (2002)
https://doi.org/10.1063/1.1461871
Density of states of interface trap centers
Appl. Phys. Lett. 80, 1945–1947 (2002)
https://doi.org/10.1063/1.1461053
Generalized Einstein relation for disordered semiconductors—implications for device performance
Appl. Phys. Lett. 80, 1948–1950 (2002)
https://doi.org/10.1063/1.1461419
Atomistic-to-continuum description of vacancy cluster properties in crystalline silicon
Appl. Phys. Lett. 80, 1951–1953 (2002)
https://doi.org/10.1063/1.1461050
V/Al/Pt/Au Ohmic contact to n-AlGaN/GaN heterostructures
Appl. Phys. Lett. 80, 1954–1956 (2002)
https://doi.org/10.1063/1.1459768
Si dangling-bond-type defects at the interface of (100)Si with ultrathin layers of and
Appl. Phys. Lett. 80, 1957–1959 (2002)
https://doi.org/10.1063/1.1448169
MAGNETISM AND SUPERCONDUCTIVITY
Microstructure and magnetic properties of uncoupled nanocomposites
Appl. Phys. Lett. 80, 1960–1962 (2002)
https://doi.org/10.1063/1.1461070
Epitaxial titanium diboride films grown by pulsed-laser deposition
Appl. Phys. Lett. 80, 1963–1965 (2002)
https://doi.org/10.1063/1.1461869
Study of interface structure of nanocomposite magnets
Appl. Phys. Lett. 80, 1966–1968 (2002)
https://doi.org/10.1063/1.1456950
Accurate measurements of quantum voltage steps on arrays of bicrystal Josephson junctions
Appl. Phys. Lett. 80, 1972–1974 (2002)
https://doi.org/10.1063/1.1458072
DIELECTRICS AND FERROELECTRICITY
Polarity effect on the temperature dependence of leakage current through gate dielectric stacks
Appl. Phys. Lett. 80, 1975–1977 (2002)
https://doi.org/10.1063/1.1435411
Impact of thermal strain on the dielectric constant of sputtered barium strontium titanate thin films
Appl. Phys. Lett. 80, 1978–1980 (2002)
https://doi.org/10.1063/1.1459482
Processing and characterization of oval piezoelectric actuators
Appl. Phys. Lett. 80, 1981–1983 (2002)
https://doi.org/10.1063/1.1461423
Effect of annealing temperature on physical and electrical properties of thin films on -buffered Si
Appl. Phys. Lett. 80, 1984–1986 (2002)
https://doi.org/10.1063/1.1459115
Study on Zr-silicate interfacial layer of metal-insulator-semiconductor structure
Appl. Phys. Lett. 80, 1987–1989 (2002)
https://doi.org/10.1063/1.1454231
NANOSCALE SCIENCE AND DESIGN
Spontaneous vacancy array formation on and formed on surface
Appl. Phys. Lett. 80, 1990–1992 (2002)
https://doi.org/10.1063/1.1461904
Comparison of wear characteristics of etched-silicon and carbon nanotube atomic-force microscopy probes
Appl. Phys. Lett. 80, 1996–1998 (2002)
https://doi.org/10.1063/1.1452782
Emission probabilities of π electrons in carbon naonotubes
Appl. Phys. Lett. 80, 1999–2001 (2002)
https://doi.org/10.1063/1.1461432
Nanoscale modification of optical properties in Ge-doped glass by electron-beam irradiation
Appl. Phys. Lett. 80, 2005–2007 (2002)
https://doi.org/10.1063/1.1454211
Adsorption and incorporation of silicon at GaN(0001) surfaces
Appl. Phys. Lett. 80, 2008–2010 (2002)
https://doi.org/10.1063/1.1452785
Field emission from dense, sparse, and patterned arrays of carbon nanofibers
K. B. K. Teo; M. Chhowalla; G. A. J. Amaratunga; W. I. Milne; G. Pirio; P. Legagneux; F. Wyczisk; D. Pribat; D. G. Hasko
Appl. Phys. Lett. 80, 2011–2013 (2002)
https://doi.org/10.1063/1.1461868
Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal–insulator– semiconductor structure
W. K. Choi; W. K. Chim; C. L. Heng; L. W. Teo; Vincent Ho; V. Ng; D. A. Antoniadis; E. A. Fitzgerald
Appl. Phys. Lett. 80, 2014–2016 (2002)
https://doi.org/10.1063/1.1459760
DEVICE PHYSICS
Trap levels and effect of oxygen in poly[2-methoxy-5- (2′-ethyl-hexyloxy)-1,4-phenylene vinylene] diodes
Appl. Phys. Lett. 80, 2017–2019 (2002)
https://doi.org/10.1063/1.1459114
Visible–blind photoresponse of GaN-based surface acoustic wave oscillator
Appl. Phys. Lett. 80, 2020–2022 (2002)
https://doi.org/10.1063/1.1459485
High-sensitivity high-resolution dual-function signal and time digitizer
Saad Sarwana; Deepnarayan Gupta; Alex F. Kirichenko; Takayuki Oku; Chiko Otani; Hiromi Sato; Hirohiko M. Shimizu
Appl. Phys. Lett. 80, 2023–2025 (2002)
https://doi.org/10.1063/1.1459110
High-efficiency organic electrophophorescent devices through balance of charge injection
Appl. Phys. Lett. 80, 2026–2028 (2002)
https://doi.org/10.1063/1.1458687
APPLIED BIOPHYSICS
Heat conduction nanocalorimeter for pl-scale single cell measurements
Appl. Phys. Lett. 80, 2029–2031 (2002)
https://doi.org/10.1063/1.1457532
INTERDISCIPLINARY AND GENERAL PHYSICS
Low readout field magnetic resonance imaging of hyperpolarized xenon and water in a single system
Wenjin Shao; Guodong Wang; Raymond Fuzesy; Emlyn W. Hughes; Blaine A. Chronik; Greig C. Scott; Steven M. Conolly; Albert Macovski
Appl. Phys. Lett. 80, 2032–2034 (2002)
https://doi.org/10.1063/1.1459759
Topological and chiral matter—Physics and applications
Maia G. Vergniory, Takeshi Kondo, et al.
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Feedback cooling of an insulating high-Q diamagnetically levitated plate
S. Tian, K. Jadeja, et al.