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Volume 80, Issue 10

11 March 2002

Applied Physics Letters Cover Image for Volume 80, Issue 10

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
PLASMAS AND ELECTRICAL DISCHARGES
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
NANOSCALE SCIENCE AND DESIGN
DEVICE PHYSICS

LASERS, OPTICS, AND OPTOELECTRONICS

Effect of interface structure on the optical properties of InAs/GaSb laser active regions

Wayne H. Lau; Michael E. Flatté

Appl. Phys. Lett. 80, 1683–1685 (2002) https://doi.org/10.1063/1.1456238

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Analysis of waves near focus: Method and experimental test

Salvador Bosch; Josep Ferré-Borrull

Appl. Phys. Lett. 80, 1686–1688 (2002) https://doi.org/10.1063/1.1450043

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Experimental and theoretical confirmation of Bloch-mode light propagation in planar photonic crystal waveguides

Marko Lončar; Dušan Nedeljković; Thomas P. Pearsall; Jelena Vučković; Axel Scherer; Sergey Kuchinsky; Douglas C. Allan

Appl. Phys. Lett. 80, 1689–1691 (2002) https://doi.org/10.1063/1.1452791

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High performance Feussner-type polarizers based on stretched poly(ethylene-terephthalate) films

J. C. Martı́nez-Antón; E. Bernabeu

Appl. Phys. Lett. 80, 1692–1694 (2002) https://doi.org/10.1063/1.1457529

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Vertically segregated polymer-blend photovoltaic thin-film structures through surface-mediated solution processing

A. C. Arias; N. Corcoran; M. Banach; R. H. Friend; J. D. MacKenzie; W. T. S. Huck

Appl. Phys. Lett. 80, 1695–1697 (2002) https://doi.org/10.1063/1.1456550

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Wider bandwidth with high transmission through waveguide bends in two-dimensional photonic crystal slabs

Alongkarn Chutinan; Makoto Okano; Susumu Noda

Appl. Phys. Lett. 80, 1698–1700 (2002) https://doi.org/10.1063/1.1458529

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Acousto-optic diffraction of blue and red light in GaN

D. Ciplys; R. Rimeika; M. S. Shur; R. Gaska; J. Deng; J. W. Yang; M. A. Khan

Appl. Phys. Lett. 80, 1701–1703 (2002) https://doi.org/10.1063/1.1458690

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Demonstration of high gain amplification of femtosecond ultraviolet laser pulses

K. Osvay; G. Kurdi; J. Klebniczki; M. Csatári; I. N. Ross

Appl. Phys. Lett. 80, 1704–1706 (2002) https://doi.org/10.1063/1.1458532

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Timing jitter reduction in modelocked semiconductor lasers with photon seeding

Leaf A. Jiang; Kazi S. Abedin; Matthew E. Grein; Erich P. Ippen

Appl. Phys. Lett. 80, 1707–1709 (2002) https://doi.org/10.1063/1.1459112

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All-optical Mach–Zehnder modulator using a photochromic dye-doped polymer

Jae-Wook Kang; Jang-Joo Kim; Eunkyoung Kim

Appl. Phys. Lett. 80, 1710–1712 (2002) https://doi.org/10.1063/1.1459111

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Enhancement of laser-induced optical breakdown using metal/dendrimer nanocomposites

Jing Yong Ye; Lajos Balogh; Theodore B. Norris

Appl. Phys. Lett. 80, 1713–1715 (2002) https://doi.org/10.1063/1.1459483

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PLASMAS AND ELECTRICAL DISCHARGES

Correlation between plasma expansion dynamics and gold-thin film structure during pulsed-laser deposition

Eric Irissou; Boris Le Drogoff; Mohamed Chaker; Daniel Guay

Appl. Phys. Lett. 80, 1716–1718 (2002) https://doi.org/10.1063/1.1458534

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Application of hollow channel between sustain electrodes to improve discharge characteristics in alternating current plasma display panels

Seung-Hyun Son; Yong-Suk Park; Seong-Chan Bae; Sie-Young Choi

Appl. Phys. Lett. 80, 1719–1721 (2002) https://doi.org/10.1063/1.1458527

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Radial structure of a low-frequency atmospheric-pressure glow discharge in helium

L. Mangolini; K. Orlov; U. Kortshagen; J. Heberlein; U. Kogelschatz

Appl. Phys. Lett. 80, 1722–1724 (2002) https://doi.org/10.1063/1.1458684

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Heating-mode transition in the capacitive mode of inductively coupled plasmas

ChinWook Chung; Hong-Young Chang

Appl. Phys. Lett. 80, 1725–1727 (2002) https://doi.org/10.1063/1.1456263

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Effect of $N_{2} O$ plasma treatment on the stabilization of water absorption in fluorinated silicon-oxide thin films fabricated by electron-cyclotron-resonance plasma-enhanced chemical-vapor deposition

S. P. Kim; S. K. Choi; Youngsoo Park; Ilsub Chung

Appl. Phys. Lett. 80, 1728–1730 (2002) https://doi.org/10.1063/1.1458528

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Optical properties of the deep Mn acceptor in GaN:Mn

R. Y. Korotkov; J. M. Gregie; B. W. Wessels

Appl. Phys. Lett. 80, 1731–1733 (2002) https://doi.org/10.1063/1.1456544

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Photoinduced stress in hydrogenated amorphous silicon films

E. Stratakis; E. Spanakis; P. Tzanetakis; H. Fritzsche; S. Guha; J. Yang

Appl. Phys. Lett. 80, 1734–1736 (2002) https://doi.org/10.1063/1.1458068

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Thermal conductivity of Si/SiGe and SiGe/SiGe superlattices

Scott T. Huxtable; Alexis R. Abramson; Chang-Lin Tien; Arun Majumdar; Chris LaBounty; Xiaofeng Fan; Gehong Zeng; John E. Bowers; Ali Shakouri; Edward T. Croke

Appl. Phys. Lett. 80, 1737–1739 (2002) https://doi.org/10.1063/1.1455693

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Radiative recombination mechanism in ${GaN}_{x} P_{1−x}$ alloys

I. A. Buyanova; G. Yu. Rudko; W. M. Chen; H. P. Xin; C. W. Tu

Appl. Phys. Lett. 80, 1740–1742 (2002) https://doi.org/10.1063/1.1455144

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Comparison of arsenic and phosphorus diffusion behavior in silicon–germanium alloys

S. Eguchi; J. L. Hoyt; C. W. Leitz; E. A. Fitzgerald

Appl. Phys. Lett. 80, 1743–1745 (2002) https://doi.org/10.1063/1.1458047

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Giant magnetic-field-induced strain in NiMnGa seven-layered martensitic phase

In Special Collection: APL Classic Papers

A. Sozinov; A. A. Likhachev; N. Lanska; K. Ullakko

Appl. Phys. Lett. 80, 1746–1748 (2002) https://doi.org/10.1063/1.1458075

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Microstructure-controlled magnetic properties of the bulk glass-forming alloy ${Nd}_{60} {Fe}_{30} {Al}_{10}$

S. Schneider; A. Bracchi; K. Samwer; M. Seibt; P. Thiyagarajan

Appl. Phys. Lett. 80, 1749–1751 (2002) https://doi.org/10.1063/1.1458070

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980 nm excited upconversion in an Er-doped $ZnO - {TeO}_{2}$ glass

Fiorenzo Vetrone; John-Christopher Boyer; John A. Capobianco; Adolfo Speghini; Marco Bettinelli

Appl. Phys. Lett. 80, 1752–1754 (2002) https://doi.org/10.1063/1.1458073

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Polytype homogeneity and doping distribution in homoepitaxial 4H SiC grown on nonplanar substrates

N. Nordell; O. Bowallius; S. Anand; A. Kakanakova-Georgieva; R. Yakimova; L. D. Madsen; S. Karlsson; A. O. Konstantinov

Appl. Phys. Lett. 80, 1755–1757 (2002) https://doi.org/10.1063/1.1458048

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Simultaneous measurements of Seebeck coefficient and thermal conductivity across superlattice

B. Yang; J. L. Liu; K. L. Wang; G. Chen

Appl. Phys. Lett. 80, 1758–1760 (2002) https://doi.org/10.1063/1.1458693

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Electron transport measurements of Schottky barrier inhomogeneities

L. E. Calvet; R. G. Wheeler; M. A. Reed

Appl. Phys. Lett. 80, 1761–1763 (2002) https://doi.org/10.1063/1.1456257

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Band discontinuity in the GaAs/AlAs interface studied by in situ photoemission spectroscopy

J. Okabayashi; K. Ono; T. Mano; M. Mizuguchi; K. Horiba; K. Nakamura; A. Fujimori; M. Oshima

Appl. Phys. Lett. 80, 1764–1766 (2002) https://doi.org/10.1063/1.1455695

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Thermal quenching effect of an infrared deep level in Mg-doped p-type GaN films

Keunjoo Kim; Sang Jo Chung

Appl. Phys. Lett. 80, 1767–1769 (2002) https://doi.org/10.1063/1.1456547

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Current transport in $InP / {In}_{0.5} ({Al}_{0.6} {Ga}_{0.4})_{0.5} P$ self-assembled quantum dot heterostructures using ballistic electron emission microscopy/spectroscopy

C. V. Reddy; V. Narayanamurti; J. H. Ryou; R. D. Dupuis

Appl. Phys. Lett. 80, 1770–1772 (2002) https://doi.org/10.1063/1.1458689

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Improving ${SiO}_{2} / SiGe$ interface of SiGe p-metal–oxide–silicon field-effect transistors using water vapor annealing

T. Ngai; X. Chen; J. Chen; S. K. Banerjee

Appl. Phys. Lett. 80, 1773–1775 (2002) https://doi.org/10.1063/1.1445806

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MAGNETISM AND SUPERCONDUCTIVITY

Local contactless measurement of the ordinary and extraordinary Hall effect using near-field microwave microscopy

M. Abu-Teir; F. Sakran; M. Golosovsky; D. Davidov; A. Frenkel

Appl. Phys. Lett. 80, 1776–1778 (2002) https://doi.org/10.1063/1.1456541

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Transition from negative magnetoresistance behavior to positive behavior in ${Co}_{20} ({Cu}_{1−x} {Ge}_{x})_{80}$ ribbons

J. He; Z. D. Zhang; J. P. Liu; D. J. Sellmyer

Appl. Phys. Lett. 80, 1779–1781 (2002) https://doi.org/10.1063/1.1458682

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Low voltage $I–V$ characteristics in magnetic tunneling junctions

G. G. Cabrera; N. Garcı́a

Appl. Phys. Lett. 80, 1782–1784 (2002) https://doi.org/10.1063/1.1433168

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Balistic magnetoresistance in nanocontacts electrochemically grown between macro- and microscopic ferromagnetic electrodes

N. Garcı́a; G. G. Qiang; I. G. Saveliev

Appl. Phys. Lett. 80, 1785–1787 (2002) https://doi.org/10.1063/1.1459108

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Quantum-confined magneto-Stark effect in diluted magnetic semiconductor coupled quantum wells

Kai Chang; J. B. Xia; H. B. Wu; S. L. Feng; F. M. Peeters

Appl. Phys. Lett. 80, 1788–1790 (2002) https://doi.org/10.1063/1.1459491

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Phase diagram of three contrasting magnetization reversal phases in uniaxial ferromagnetic thin films

Sug-Bong Choe; Sung-Chul Shin

Appl. Phys. Lett. 80, 1791–1793 (2002) https://doi.org/10.1063/1.1457527

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Spin polarization contrast observed in GaAs by force-detected nuclear magnetic resonance

Kent R. Thurber; Lee E. Harrell; Raúl Fainchtein; Doran D. Smith

Appl. Phys. Lett. 80, 1794–1796 (2002) https://doi.org/10.1063/1.1458688

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DIELECTRICS AND FERROELECTRICITY

Electrical and dielectric behavior of MgO doped ${Ba}_{0.7} {Sr}_{0.3} {TiO}_{3}$ thin films on ${Al}_{2} O_{3}$ substrate

S. Y. Lee; T. Y. Tseng

Appl. Phys. Lett. 80, 1797–1799 (2002) https://doi.org/10.1063/1.1458067

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Electrical characterization of metal–insulator–semiconductor capacitors with xerogel as dielectric

E. Anulekha Manjari; A. Subrahmanyam; N. DasGupta; A. DasGupta

Appl. Phys. Lett. 80, 1800–1802 (2002) https://doi.org/10.1063/1.1458065

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Direct observation of atomic disordering at the ${SrTiO}_{3} / Si$ interface due to oxygen diffusion

V. Shutthanandan; S. Thevuthasan; Y. Liang; E. M. Adams; Z. Yu; R. Droopad

Appl. Phys. Lett. 80, 1803–1805 (2002) https://doi.org/10.1063/1.1456261

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Scanning probe microscopy of well-defined periodically poled ferroelectric domain structure

M. Shvebelman; P. Urenski; R. Shikler; G. Rosenman; Y. Rosenwaks; M. Molotskii

Appl. Phys. Lett. 80, 1806–1808 (2002) https://doi.org/10.1063/1.1456967

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In situ x-ray scattering study of ${PbTiO}_{3}$ chemical-vapor deposition

M. V. Ramana Murty; S. K. Streiffer; G. B. Stephenson; J. A. Eastman; G.-R. Bai; A. Munkholm; O. Auciello; Carol Thompson

Appl. Phys. Lett. 80, 1809–1811 (2002) https://doi.org/10.1063/1.1458530

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NANOSCALE SCIENCE AND DESIGN

Dispersion, refinement, and manipulation of single silicon nanowires

J. Z. He; J. B. Xu; M. S. Xu; Z. Xie; I. H. Wilson; X. L. Ma; Q. Li; N. Wang; L. S. Hung; C. S. Lee; S. T. Lee

Appl. Phys. Lett. 80, 1812–1814 (2002) https://doi.org/10.1063/1.1456966

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Simple method to prepare individual suspended nanofibers

Gyu-Tae Kim; Gang Gu; Ulrike Waizmann; Siegmar Roth

Appl. Phys. Lett. 80, 1815–1817 (2002) https://doi.org/10.1063/1.1458533

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Strongly capacitively coupled quantum dots

I. H. Chan; R. M. Westervelt; K. D. Maranowski; A. C. Gossard

Appl. Phys. Lett. 80, 1818–1820 (2002) https://doi.org/10.1063/1.1456552

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Field emission from well-aligned carbon nanotips grown in a gated device structure

C. L. Tsai; C. F. Chen; C. L. Lin

Appl. Phys. Lett. 80, 1821–1822 (2002) https://doi.org/10.1063/1.1459109

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Growth and properties of ${Cu}_{3} N$ films and ${Cu}_{3} N {/γ}^{'} - {Fe}_{4} N$ bilayers

D. M. Borsa; S. Grachev; C. Presura; D. O. Boerma

Appl. Phys. Lett. 80, 1823–1825 (2002) https://doi.org/10.1063/1.1459116

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Resonant light scattering from individual Ag nanoparticles and particle pairs

Hiroharu Tamaru; Hitoshi Kuwata; Hideki T. Miyazaki; Kenjiro Miyano

Appl. Phys. Lett. 80, 1826–1828 (2002) https://doi.org/10.1063/1.1461072

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Correlation of surface molecular composition to nanoscale elastic behavior and topography of stretched polyurethane films

E. Amitay-Sadovsky; K. Komvopoulos; Y. Tian; G. A. Somorjai

Appl. Phys. Lett. 80, 1829–1831 (2002) https://doi.org/10.1063/1.1458526

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DEVICE PHYSICS

Characteristics of surface acoustic wave convolver in the monolithic metal–zinc oxide–silicon nitride–silicon dioxide–silicon structure

B. S. Panwar

Appl. Phys. Lett. 80, 1832–1834 (2002) https://doi.org/10.1063/1.1456264

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Mark shapes in hybrid recording

P. Herget; T. Rausch; A. C. Shiela; D. D. Stancil; T. E. Schlesinger; J.-G. Zhu; J. A. Bain

Appl. Phys. Lett. 80, 1835–1837 (2002) https://doi.org/10.1063/1.1454230

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Evaluation of thermal parameters of bolometer devices

P. Neuzil; T. Mei

Appl. Phys. Lett. 80, 1838–1840 (2002) https://doi.org/10.1063/1.1458686

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Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP $n$ -type resonant tunnelling diodes

L.-E. Wernersson; M. Borgström; B. Gustafson; A. Gustafsson; I. Pietzonka; M.-E. Pistol; T. Sass; W. Seifert; L. Samuelson

Appl. Phys. Lett. 80, 1841–1843 (2002) https://doi.org/10.1063/1.1459113

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Reduction method for low-frequency noise of GaAs junction field-effect transistor at a cryogenic temperature

M. Fujiwara; M. Sasaki; M. Akiba

Appl. Phys. Lett. 80, 1844–1846 (2002) https://doi.org/10.1063/1.1461421

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Electro-optical characteristics and switching behavior of a twisted nematic liquid crystal device based upon in-plane switching

Shinichirou Oka; Munehiro Kimura; Tadashi Akahane

Appl. Phys. Lett. 80, 1847–1849 (2002) https://doi.org/10.1063/1.1459764

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