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Volume 79, Issue 8

20 August 2001

Applied Physics Letters Cover Image for Volume 79, Issue 8

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
NANOSCALE SCIENCE AND DESIGN
DEVICE PHYSICS
APPLIED BIOPHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS
ERRATA

LASERS, OPTICS, AND OPTOELECTRONICS

Stabilization of the repetition rate of passively $Q$ -switched diode-pumped solid-state lasers

Ngoc Diep Lai; Marc Brunel; Fabien Bretenaker; Albert Le Floch

Appl. Phys. Lett. 79, 1073–1075 (2001) https://doi.org/10.1063/1.1396320

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Bend loss in surface plasmon polariton band-gap structures

Sergey I. Bozhevolnyi; Valentyn S. Volkov; Kristjan Leosson; Alexandra Boltasseva

Appl. Phys. Lett. 79, 1076–1078 (2001) https://doi.org/10.1063/1.1389507

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Light-induced self-written three-dimensional optical waveguide

Manabu Kagami; Tatsuya Yamashita; Hiroshi Ito

Appl. Phys. Lett. 79, 1079–1081 (2001) https://doi.org/10.1063/1.1389516

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Intense and stable blue-light emission of $Pb ({Zr}_{x} {Ti}_{1−x}) O_{3}$

Chang Q Sun; Da Jin; Ji Zhou; S. Li; B. K. Tay; S. P. Lau; X. W. Sun; H. T. Huang; P. Hing

Appl. Phys. Lett. 79, 1082–1084 (2001) https://doi.org/10.1063/1.1394946

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Influence of localized nitrogen states on material gain in InGaAsN/GaAs quantum-well lasers

J. C. L. Yong; J. M. Rorison; I. H. White

Appl. Phys. Lett. 79, 1085–1087 (2001) https://doi.org/10.1063/1.1390482

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Wavelength tunable diffractive transmission lens for hard x rays

C. David; B. Nöhammer; E. Ziegler

Appl. Phys. Lett. 79, 1088–1090 (2001) https://doi.org/10.1063/1.1379364

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Observation of an anomalously large blueshift of the photoluminescence peak and evidence of band-gap renormalization in InP/InAs/InP quantum wires

Xiaodong Mu; Ioulia B. Zotova; Yujie J. Ding; Haeyeon Yang; Gregory J. Salamo

Appl. Phys. Lett. 79, 1091–1093 (2001) https://doi.org/10.1063/1.1390483

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular-beam epitaxy

Wei Li; Markus Pessa; Tommy Ahlgren; James Decker

Appl. Phys. Lett. 79, 1094–1096 (2001) https://doi.org/10.1063/1.1396316

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Quantum beats of free and bound excitons in GaN

K. Kyhm; R. A. Taylor; J. F. Ryan; T. Aoki; M. Kuwata-Gonokami; B. Beaumont; P. Gibart

Appl. Phys. Lett. 79, 1097–1099 (2001) https://doi.org/10.1063/1.1391411

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Current-modulated electroluminescence spectroscopy and its application to InGaN single-quantum-well blue and green light-emitting diodes

Takashi Azuhata; Takefumi Homma; Yoshikazu Ishikawa; Shigefusa F. Chichibu; Takayuki Sota; Takashi Mukai

Appl. Phys. Lett. 79, 1100–1102 (2001) https://doi.org/10.1063/1.1396312

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Effects of boron-interstitial silicon clusters on interstitial supersaturation during postimplantation annealing

S. Solmi; L. Mancini; S. Milita; M. Servidori; G. Mannino; M. Bersani

Appl. Phys. Lett. 79, 1103–1105 (2001) https://doi.org/10.1063/1.1396310

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Pressure-induced amorphization of ZrTiCuNiBe bulk glass-forming alloy

Wei Hua Wang; R. J. Wang; D. Y. Dai; D. Q. Zhao; M. X. Pan; Y. S. Yao

Appl. Phys. Lett. 79, 1106–1108 (2001) https://doi.org/10.1063/1.1396321

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Ultrathin PtSi layers patterned by scanned probe lithography

E. S. Snow; P. M. Campbell; M. Twigg; F. K. Perkins

Appl. Phys. Lett. 79, 1109–1111 (2001) https://doi.org/10.1063/1.1394167

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High-pressure x-ray diffraction of icosahedral Zr–Al–Ni–Cu–Ag quasicrystals

J. Z. Jiang; K. Saksl; H. Rasmussen; T. Watanuki; N. Ishimatsu; O. Shimomara

Appl. Phys. Lett. 79, 1112–1114 (2001) https://doi.org/10.1063/1.1394951

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Bulk diffusion of microwave plasma activated deuterium into undoped natural diamond

A. Laikhtman; A. Hoffman; C. Cytermann

Appl. Phys. Lett. 79, 1115–1117 (2001) https://doi.org/10.1063/1.1394169

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Suppression of lateral fluctuations in CdSe-based quantum wells

E. Kurtz; M. Schmidt; M. Baldauf; S. Wachter; M. Grün; H. Kalt; C. Klingshirn; D. Litvinov; A. Rosenauer; D. Gerthsen

Appl. Phys. Lett. 79, 1118–1120 (2001) https://doi.org/10.1063/1.1394172

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Observation of thermally activated conduction at a GaN–sapphire interface

C. Mavroidis; J. J. Harris; M. J. Kappers; N. Sharma; C. J. Humphreys; E. J. Thrush

Appl. Phys. Lett. 79, 1121–1123 (2001) https://doi.org/10.1063/1.1395525

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Bias stress in organic thin-film transistors and logic gates

S. J. Zilker; C. Detcheverry; E. Cantatore; D. M. de Leeuw

Appl. Phys. Lett. 79, 1124–1126 (2001) https://doi.org/10.1063/1.1394718

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Selenium-related luminescent centers in metalorganic chemical-vapor-phase deposition grown ZnSe epilayers on GaAs

X. B. Zhang; K. L. Ha; S. K. Hark

Appl. Phys. Lett. 79, 1127–1129 (2001) https://doi.org/10.1063/1.1394949

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Measurement of piezoelectric field and tunneling times in strongly biased InGaN/GaN quantum wells

Y. D. Jho; J. S. Yahng; E. Oh; D. S. Kim

Appl. Phys. Lett. 79, 1130–1132 (2001) https://doi.org/10.1063/1.1396315

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Predicted maximum mobility in bulk GaN

D. C. Look; J. R. Sizelove

Appl. Phys. Lett. 79, 1133–1135 (2001) https://doi.org/10.1063/1.1394954

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Long-wavelength HgCdTe negative luminescent devices

T. Ashley; N. T. Gordon; G. R. Nash; C. L. Jones; C. D. Maxey; R. A. Catchpole

Appl. Phys. Lett. 79, 1136–1138 (2001) https://doi.org/10.1063/1.1395521

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Effective enhancement of C54 ${TiSi}_{2}$ phase formation with multi-thermal-shock processing at 600 °C

S. Li; Y. K. Lee; L. Zhang; W. Gao; K. S. Lee

Appl. Phys. Lett. 79, 1139–1141 (2001) https://doi.org/10.1063/1.1382630

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MAGNETISM AND SUPERCONDUCTIVITY

Coercivity and squareness enhancement in ball-milled hard magnetic–antiferromagnetic composites

J. Sort; J. Nogués; S. Suriñach; J. S. Muñoz; M. D. Baró; E. Chappel; F. Dupont; G. Chouteau

Appl. Phys. Lett. 79, 1142–1144 (2001) https://doi.org/10.1063/1.1392308

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Stacked Josephson junctions in view of macroscopic quantum experiments

C. Granata; V. Corato; A. Monaco; B. Ruggiero; M. Russo; P. Silvestrini

Appl. Phys. Lett. 79, 1145–1147 (2001) https://doi.org/10.1063/1.1391238

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Intermartensitic transformation and magnetic-field-induced strain in ${Ni}_{52} {Mn}_{24.5} {Ga}_{23.5}$ single crystals

W. H. Wang; G. H. Wu; J. L. Chen; S. X. Gao; W. S. Zhan; G. H. Wen; X. X. Zhang

Appl. Phys. Lett. 79, 1148–1150 (2001) https://doi.org/10.1063/1.1396820

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Magnetic patterning of chemically-ordered ${CrPt}_{3}$ films

Olav Hellwig; Dieter Weller; A. J. Kellock; J. E. E. Baglin; Eric E. Fullerton

Appl. Phys. Lett. 79, 1151–1153 (2001) https://doi.org/10.1063/1.1394722

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High critical current density of ${MgB}_{2}$ bulk superconductor doped with Ti and sintered at ambient pressure

Y. Zhao; Y. Feng; C. H. Cheng; L. Zhou; Y. Wu; T. Machi; Y. Fudamoto; N. Koshizuka; M. Murakami

Appl. Phys. Lett. 79, 1154–1156 (2001) https://doi.org/10.1063/1.1396629

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Spin-valve transistor with an Fe/Au/Fe(001) base

R. Sato; K. Mizushima

Appl. Phys. Lett. 79, 1157–1159 (2001) https://doi.org/10.1063/1.1397257

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DIELECTRICS AND FERROELECTRICITY

Performance of ${Co/Al}_{2} O_{3} /NiFe$ magnetic tunnel junctions prepared by a two-step rf plasma oxidation method

K. S. Yoon; J. H. Park; J. H. Choi; J. Y. Yang; C. H. Lee; C. O. Kim; J. P. Hong; T. W. Kang

Appl. Phys. Lett. 79, 1160–1162 (2001) https://doi.org/10.1063/1.1391407

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Laser-driven high-current-density pulsed electron emission from lead zirconium titanate ferroelectric ceramic

A. Moorti; S. Sailaja; P. A. Naik; P. D. Gupta; Yu. V. Korobkin; I. V. Romanov; A. A. Rupasov; A. S. Shikhanov

Appl. Phys. Lett. 79, 1163–1165 (2001) https://doi.org/10.1063/1.1396309

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Ferroparaelectric transitions in relaxor materials studied by a photoacoustic technique

J. Luis Pineda Flores; R. Castañeda-Guzmán; M. Villagran-Muniz; Alfonso Huanosta-Tera

Appl. Phys. Lett. 79, 1166–1168 (2001) https://doi.org/10.1063/1.1394950

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NANOSCALE SCIENCE AND DESIGN

Nanospot welding of carbon nanotubes

H. Hirayama; Y. Kawamoto; Y. Ohshima; K. Takayanagi

Appl. Phys. Lett. 79, 1169–1171 (2001) https://doi.org/10.1063/1.1395535

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Reliability and current carrying capacity of carbon nanotubes

B. Q. Wei; R. Vajtai; P. M. Ajayan

Appl. Phys. Lett. 79, 1172–1174 (2001) https://doi.org/10.1063/1.1396632

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Single-electron charging effect in individual Si nanocrystals

T. Baron; P. Gentile; N. Magnea; P. Mur

Appl. Phys. Lett. 79, 1175–1177 (2001) https://doi.org/10.1063/1.1392302

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Shaping carbon nanostructures by controlling the synthesis process

Vladimir I. Merkulov; Michael A. Guillorn; Douglas H. Lowndes; Michael L. Simpson; Edgar Voelkl

Appl. Phys. Lett. 79, 1178–1180 (2001) https://doi.org/10.1063/1.1395517

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Two-dimensional assembly of gold nanoparticles with a DNA network template

Y. Maeda; H. Tabata; T. Kawai

Appl. Phys. Lett. 79, 1181–1183 (2001) https://doi.org/10.1063/1.1396630

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Fabrication of a nanometric Zn dot by nonresonant near-field optical chemical-vapor deposition

Tadashi Kawazoe; Yoh Yamamoto; Motoichi Ohtsu

Appl. Phys. Lett. 79, 1184–1186 (2001) https://doi.org/10.1063/1.1394955

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Effect of electric field on the electronic structures of carbon nanotubes

Changwook Kim; Bongsoo Kim; Seung Mi Lee; Chulsu Jo; Young Hee Lee

Appl. Phys. Lett. 79, 1187–1189 (2001) https://doi.org/10.1063/1.1389515

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DEVICE PHYSICS

Nonvolatile reprogrammable logic elements using hybrid resonant tunneling diode–giant magnetoresistance circuits

A. T. Hanbicki; R. Magno; S.-F. Cheng; Y. D. Park; A. S. Bracker; B. T. Jonker

Appl. Phys. Lett. 79, 1190–1192 (2001) https://doi.org/10.1063/1.1395523

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Barriers to electron extraction in polymer light-emitting diodes

K. Murata; S. Cinà; N. C. Greenham

Appl. Phys. Lett. 79, 1193–1195 (2001) https://doi.org/10.1063/1.1396627

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Electroluminescence characterization of AlGaN/GaN high-electron-mobility transistors

Naoteru Shigekawa; Kenji Shiojima; Tetsuya Suemitsu

Appl. Phys. Lett. 79, 1196–1198 (2001) https://doi.org/10.1063/1.1398332

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Double quantum dots as a high sensitive submillimeter-wave detector

O. Astafiev; S. Komiyama; T. Kutsuwa

Appl. Phys. Lett. 79, 1199–1201 (2001) https://doi.org/10.1063/1.1396628

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Charge-imaging field-effect transistor

L. H. Chen; M. A. Topinka; B. J. LeRoy; R. M. Westervelt; K. D. Maranowski; A. C. Gossard

Appl. Phys. Lett. 79, 1202–1204 (2001) https://doi.org/10.1063/1.1395516

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Lithium–fluoride-modified indium tin oxide anode for enhanced carrier injection in phenyl-substituted polymer electroluminescent devices

Furong Zhu; Beeling Low; Keran Zhang; Soojin Chua

Appl. Phys. Lett. 79, 1205–1207 (2001) https://doi.org/10.1063/1.1396819

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APPLIED BIOPHYSICS

Generation of calcium waves in living cells by pulsed-laser-induced photodisruption

Nicholas I. Smith; Katsumasa Fujita; Tomoyuki Kaneko; Kentaro Katoh; Osamu Nakamura; Satoshi Kawata; Tetsuro Takamatsu

Appl. Phys. Lett. 79, 1208–1210 (2001) https://doi.org/10.1063/1.1397255

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INTERDISCIPLINARY AND GENERAL PHYSICS

Quantitative carrier profiling in ion-implanted 6H–SiC

Filippo Giannazzo; Lucia Calcagno; Vito Raineri; Lorenzo Ciampolini; Mauro Ciappa; Enrico Napolitani

Appl. Phys. Lett. 79, 1211–1213 (2001) https://doi.org/10.1063/1.1394956

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Near-field infrared microscopy with a transient photoinduced aperture

D. Simanovskii; D. Palanker; K. Cohn; T. Smith

Appl. Phys. Lett. 79, 1214–1216 (2001) https://doi.org/10.1063/1.1395524

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ERRATA

Erratum: “Epitaxial growth of orientation‐controlled ${KNbO}_{3}$ crystal films on MgO using ${KTa}_{x} {Nb}_{1−x} O_{3}$ intermediate layer by metalorganic chemical vapor deposition” [Appl. Phys. Lett. 78, 49 (2001)]

Atsushi Onoe; Ayako Yoshida; Kiyofumi Chikuma

Appl. Phys. Lett. 79, 1217 (2001) https://doi.org/10.1063/1.1396621

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