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LASERS, OPTICS, AND OPTOELECTRONICS

GaInSb/InAs/AlGaAsSb “W” quantum-well light-emitting diodes

D. G. Gevaux; A. M. Green; C. C. Phillips; I. Vurgaftman; W. W. Bewley; C. L. Felix; J. R. Meyer; H. Lee; R. U. Martinelli

Appl. Phys. Lett. 79, 4073–4075 (2001) https://doi.org/10.1063/1.1426267

Abstract

View articletitled, GaInSb/InAs/AlGaAsSb “W” quantum-well light-emitting diodes

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Design and performance analysis of deep-etch air/nitride distributed Bragg reflector gratings for AlInGaN laser diodes

C. Marinelli; M. Bordovsky; L. J. Sargent; M. Gioannini; J. M. Rorison; R. V. Penty; I. H. White; P. J. Heard; M. Benyoucef; M. Kuball; G. Hasnain; T. Takeuchi; R. P. Schneider

Appl. Phys. Lett. 79, 4076–4078 (2001) https://doi.org/10.1063/1.1424061

Abstract

View articletitled, Design and performance analysis of deep-etch air/nitride distributed Bragg reflector gratings for AlInGaN laser diodes

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High single-mode power observed from a coupled-resonator vertical-cavity laser diode

A. J. Fischer; K. D. Choquette; W. W. Chow; A. A. Allerman; D. K. Serkland; K. M. Geib

Appl. Phys. Lett. 79, 4079–4081 (2001) https://doi.org/10.1063/1.1426254

Abstract

View articletitled, High single-mode power observed from a coupled-resonator vertical-cavity laser diode

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Single-mode tunable organic laser based on an electroluminescent oligothiophene

M. Zavelani-Rossi; G. Lanzani; S. De Silvestri; M. Anni; G. Gigli; R. Cingolani; G. Barbarella; L. Favaretto

Appl. Phys. Lett. 79, 4082–4084 (2001) https://doi.org/10.1063/1.1426686

Abstract

View articletitled, Single-mode tunable organic laser based on an electroluminescent oligothiophene

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Lithium metal for x-ray refractive optics

E. M. Dufresne; D. A. Arms; R. Clarke; N. R. Pereira; S. B. Dierker; D. Foster

Appl. Phys. Lett. 79, 4085–4087 (2001) https://doi.org/10.1063/1.1425068

Abstract

View articletitled, Lithium metal for x-ray refractive optics

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Continuous wave waveguide laser at room temperature in ${Nd}^{3+}$ -doped ${Zn:LiNbO}_{3}$

R. E. Di Paolo; E. Cantelar; P. L. Pernas; G. Lifante; F. Cusso

Appl. Phys. Lett. 79, 4088–4090 (2001) https://doi.org/10.1063/1.1427426

Abstract

View articletitled, Continuous wave waveguide laser at room temperature in <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Nd</mi><mrow><mi mathvariant="normal">3+</mi></mrow></msup></math>-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Zn:LiNbO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math>

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Single-mode operation of coupled-cavity lasers based on two-dimensional photonic crystals

Thomas D. Happ; Alexander Markard; Martin Kamp; Alfred Forchel; Srinivasan Anand

Appl. Phys. Lett. 79, 4091–4093 (2001) https://doi.org/10.1063/1.1427158

Abstract

View articletitled, Single-mode operation of coupled-cavity lasers based on two-dimensional photonic crystals

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PLASMAS AND ELECTRICAL DISCHARGES

Quantum effects on bremsstrahlung spectrum from electron–positron plasmas

Young-Dae Jung

Appl. Phys. Lett. 79, 4094–4096 (2001) https://doi.org/10.1063/1.1426261

Abstract

View articletitled, Quantum effects on bremsstrahlung spectrum from electron–positron plasmas

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High-repetition-rate ferroelectric-cathode gyrotron

M. Einat; E. Jerby; G. Rosenman

Appl. Phys. Lett. 79, 4097–4099 (2001) https://doi.org/10.1063/1.1426262

Abstract

View articletitled, High-repetition-rate ferroelectric-cathode gyrotron

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A pump–probe investigation of laser-droplet plasma dynamics

S. J. McNaught; J. Fan; E. Parra; H. M. Milchberg

Appl. Phys. Lett. 79, 4100–4102 (2001) https://doi.org/10.1063/1.1426266

Abstract

View articletitled, A pump–probe investigation of laser-droplet plasma dynamics

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Systematic measurement of ${Al}_{x} {Ga}_{1−x} N$ refractive indices

Ümit Özgür; Grady Webb-Wood; Henry O. Everitt; Feng Yun; Hadis Morkoç

Appl. Phys. Lett. 79, 4103–4105 (2001) https://doi.org/10.1063/1.1426270

Abstract

View articletitled, Systematic measurement of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">N</mi></math> refractive indices

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Evaluation of the precipitate contribution to the infrared absorption in interstitial oxygen measurements in silicon

A. Sassella; A. Borghesi; B. Pivac; M. Porrini

Appl. Phys. Lett. 79, 4106–4108 (2001) https://doi.org/10.1063/1.1425457

Abstract

View articletitled, Evaluation of the precipitate contribution to the infrared absorption in interstitial oxygen measurements in silicon

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Optical investigation of shallow acceptor states in GaN grown by hydride vapor-phase epitaxy

V. Kirilyuk; P. R. Hageman; P. C. M. Christianen; P. K. Larsen; M. Zielinski

Appl. Phys. Lett. 79, 4109–4111 (2001) https://doi.org/10.1063/1.1427151

Abstract

View articletitled, Optical investigation of shallow acceptor states in GaN grown by hydride vapor-phase epitaxy

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Determination of residual stresses in ${Pb(Zr}_{0.53} {Ti}_{0.47} {)O}_{3}$ thin films with Raman spectroscopy

Wei-Hua Xu; Dexin Lu; Tong-Yi Zhang

Appl. Phys. Lett. 79, 4112–4114 (2001) https://doi.org/10.1063/1.1426271

Abstract

View articletitled, Determination of residual stresses in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pb(Zr</mi><mrow><mi mathvariant="normal">0.53</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mi mathvariant="normal">0.47</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">)O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> thin films with Raman spectroscopy

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Ductility of ultrafine grained copper

Hyoung Seop Kim; Yuri Estrin

Appl. Phys. Lett. 79, 4115–4117 (2001) https://doi.org/10.1063/1.1426697

Abstract

View articletitled, Ductility of ultrafine grained copper

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Lateral composition modulation in short period superlattices: The role of growth mode

C. Dorin; J. Mirecki Millunchick; Y. Chen; B. G. Orr; C. A. Pearson

Appl. Phys. Lett. 79, 4118–4120 (2001) https://doi.org/10.1063/1.1425452

Abstract

View articletitled, Lateral composition modulation in short period superlattices: The role of growth mode

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Thermal conductivity and interfacial thermal resistance of polymeric low k films

Chuan Hu; Michael Kiene; Paul S. Ho

Appl. Phys. Lett. 79, 4121–4123 (2001) https://doi.org/10.1063/1.1419239

Abstract

View articletitled, Thermal conductivity and interfacial thermal resistance of polymeric low k films

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Energy level alignment driven by electron affinity difference at 3,4,9,10-perylenetetracarboxylic dianhydride/n-GaAs(100) interfaces

Sunggook Park; Thorsten U. Kampen; Dietrich R. T. Zahn; Walter Braun

Appl. Phys. Lett. 79, 4124–4126 (2001) https://doi.org/10.1063/1.1426253

Abstract

View articletitled, Energy level alignment driven by electron affinity difference at 3,4,9,10-perylenetetracarboxylic dianhydride/n-GaAs(100) interfaces

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Finite element analysis of epitaxial lateral overgrown GaN: Voids at the coalescence boundary

M. Benyoucef; M. Kuball; G. Hill; M. Wisnom; B. Beaumont; P. Gibart

Appl. Phys. Lett. 79, 4127–4129 (2001) https://doi.org/10.1063/1.1426276

Abstract

View articletitled, Finite element analysis of epitaxial lateral overgrown GaN: Voids at the coalescence boundary

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Oxidation kinetics of tunnel barrier and its effect on exchange bias of proximity interface

Seung-Young Bae; Kyung-Ho Shin; Je-Hyung Lee; Keung-Won Rhie; Kyoung-Il Lee; Jae-Geun Ha; Shan Xiang Wang

Appl. Phys. Lett. 79, 4130–4132 (2001) https://doi.org/10.1063/1.1423772

Abstract

View articletitled, Oxidation kinetics of tunnel barrier and its effect on exchange bias of proximity interface

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Hexagonal GaN grown on $GaAs {11n}$ substrates by metalorganic vapor-phase epitaxy using AlAs intermediate layers

Mitsuru Funato; Shuichiro Yamamoto; Kiyohiro Kaisei; Koichiro Shimogami; Shizuo Fujita; Shigeo Fujita

Appl. Phys. Lett. 79, 4133–4135 (2001) https://doi.org/10.1063/1.1426275

Abstract

View articletitled, Hexagonal GaN grown on <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">GaAs</mi><mtext xmlns="">{11n}</mtext></math> substrates by metalorganic vapor-phase epitaxy using AlAs intermediate layers

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Diagnostics of surface layer disordering using optical third harmonic generation of a circular polarized light

V. V. Yakovlev; S. V. Govorkov

Appl. Phys. Lett. 79, 4136–4138 (2001) https://doi.org/10.1063/1.1427425

Abstract

View articletitled, Diagnostics of surface layer disordering using optical third harmonic generation of a circular polarized light

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Interactions between gallium and nitrogen dopants in ZnO films grown by radical-source molecular-beam epitaxy

K. Nakahara; H. Takasu; P. Fons; A. Yamada; K. Iwata; K. Matsubara; R. Hunger; S. Niki

Appl. Phys. Lett. 79, 4139–4141 (2001) https://doi.org/10.1063/1.1424066

Abstract

View articletitled, Interactions between gallium and nitrogen dopants in ZnO films grown by radical-source molecular-beam epitaxy

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Electrical and optical characterization of conducting poly-3-methylthiophene film by THz time-domain spectroscopy

Tae-In Jeon; D. Grischkowsky; A. K. Mukherjee; Reghu Menon

Appl. Phys. Lett. 79, 4142–4144 (2001) https://doi.org/10.1063/1.1427754

Abstract

View articletitled, Electrical and optical characterization of conducting poly-3-methylthiophene film by THz time-domain spectroscopy

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Complete suppression of the transient enhanced diffusion of B implanted in preamorphized Si by interstitial trapping in a spatially separated C-rich layer

E. Napolitani; A. Coati; D. De Salvador; A. Carnera; S. Mirabella; S. Scalese; F. Priolo

Appl. Phys. Lett. 79, 4145–4147 (2001) https://doi.org/10.1063/1.1425458

Abstract

View articletitled, Complete suppression of the transient enhanced diffusion of B implanted in preamorphized Si by interstitial trapping in a spatially separated C-rich layer

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Direct observation of Fermi-level pinning in Cs-doped CuPc film

Li Yan; N. J. Watkins; S. Zorba; Yongli Gao; C. W. Tang

Appl. Phys. Lett. 79, 4148–4150 (2001) https://doi.org/10.1063/1.1426260

Abstract

View articletitled, Direct observation of Fermi-level pinning in Cs-doped CuPc film

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Dislocation-free and lattice-matched ${Si/GaP}_{1−x} N_{x} /Si$ structure for photo-electronic integrated systems

Kenji Momose; Hiroo Yonezu; Yasuhiro Fujimoto; Yuzo Furukawa; Yoshifumi Motomura; Kunio Aiki

Appl. Phys. Lett. 79, 4151–4153 (2001) https://doi.org/10.1063/1.1425451

Abstract

View articletitled, Dislocation-free and lattice-matched <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si/GaP</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi>x</mi></mrow></msub><mi mathvariant="normal" xmlns="">/Si</mi></math> structure for photo-electronic integrated systems

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Space-charge-limited currents in materials with Gaussian energy distributions of localized states

V. I. Arkhipov; P. Heremans; E. V. Emelianova; G. J. Adriaenssens

Appl. Phys. Lett. 79, 4154–4156 (2001) https://doi.org/10.1063/1.1424046

Abstract

View articletitled, Space-charge-limited currents in materials with Gaussian energy distributions of localized states

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Thermoelectric power of nitrogen-incorporated tetrahedral amorphous-carbon films

Somnath Bhattacharyya; F. Richter; U. Starke; H. Griessmann; A. Heinrich

Appl. Phys. Lett. 79, 4157–4159 (2001) https://doi.org/10.1063/1.1426696

Abstract

View articletitled, Thermoelectric power of nitrogen-incorporated tetrahedral amorphous-carbon films

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Simultaneous determination of Poisson ratio, bulk lattice constant, and composition of ternary compounds: ${In}_{0.3} {Ga}_{0.7} As,$ ${In}_{0.3} {Al}_{0.7} As,$ ${In}_{0.7} {Ga}_{0.3} P,$ and ${In}_{0.7} {Al}_{0.3} P$

W. E. Hoke; T. D. Kennedy; A. Torabi

Appl. Phys. Lett. 79, 4160–4162 (2001) https://doi.org/10.1063/1.1425954

Abstract

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On the stability of organic field-effect transistor materials

Jan Hendrik Schön

Appl. Phys. Lett. 79, 4163–4164 (2001) https://doi.org/10.1063/1.1421230

Abstract

View articletitled, On the stability of organic field-effect transistor materials

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Effects of partial substitution of Ni by Pd on the thermoelectric properties of ZrNiSn-based half-Heusler compounds

Q. Shen; L. Chen; T. Goto; T. Hirai; J. Yang; G. P. Meisner; C. Uher

Appl. Phys. Lett. 79, 4165–4167 (2001) https://doi.org/10.1063/1.1425459

Abstract

View articletitled, Effects of partial substitution of Ni by Pd on the thermoelectric properties of ZrNiSn-based half-Heusler compounds

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Composition dependence of the energy gap of ${Zn}_{1−x−y} {Mg}_{x} {Be}_{y} Se$ quaternary alloys nearly lattice matched to GaAs

K. Godo; H. Makino; M. W. Cho; J. H. Chang; Y. Yamazaki; T. Yao; M. Y. Shen; T. Goto

Appl. Phys. Lett. 79, 4168–4170 (2001) https://doi.org/10.1063/1.1424064

Abstract

View articletitled, Composition dependence of the energy gap of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Zn</mi><mrow><mtext>1−x−y</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Mg</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Be</mi><mrow><mi>y</mi></mrow></msub><mi mathvariant="normal" xmlns="">Se</mi></math> quaternary alloys nearly lattice matched to GaAs

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Effects of arsenic concentration profile in gate oxide on electric properties of metal–oxide–silicon devices

Kuei-Shu Chang-Liao; Ching-Sang Chuang

Appl. Phys. Lett. 79, 4171–4173 (2001) https://doi.org/10.1063/1.1427132

Abstract

View articletitled, Effects of arsenic concentration profile in gate oxide on electric properties of metal–oxide–silicon devices

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MAGNETISM AND SUPERCONDUCTIVITY

Nonlinear effects in ${YBa}_{2} {Cu}_{3} O_{7−x}$ microstrip resonators on sapphire

A. G. Zaitsev; R. Schneider; G. Linker; F. Ratzel; R. Smithey; J. Geerk

Appl. Phys. Lett. 79, 4174–4176 (2001) https://doi.org/10.1063/1.1425460

Abstract

View articletitled, Nonlinear effects in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">YBa</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mn>3</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mtext>7−x</mtext></mrow></msub></math> microstrip resonators on sapphire

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Oxygen-plasma effects of a ${La}_{0.7} {Ca}_{0.3} {MnO}_{3−δ}$ single crystal

H. S. Kim; C. H. Lee; Cheol Eui Lee; K. M. Kim; S. J. Noh; C. S. Hong; N. H. Hur; S. Y. Shim; H.-C. Ri

Appl. Phys. Lett. 79, 4177–4179 (2001) https://doi.org/10.1063/1.1425085

Abstract

View articletitled, Oxygen-plasma effects of a <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mi mathvariant="normal">0.7</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mi mathvariant="normal">0.3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mtext>3−δ</mtext></mrow></msub></math> single crystal

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High-quality ${MgB}_{2}$ films on boron crystals with onset $T_{c}$ of 41.7 K

N. Hur; P. A. Sharma; S. Guha; Marta Z. Cieplak; D. J. Werder; Y. Horibe; C. H. Chen; S.-W. Cheong

Appl. Phys. Lett. 79, 4180–4182 (2001) https://doi.org/10.1063/1.1427157

Abstract

View articletitled, High-quality <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">MgB</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> films on boron crystals with onset <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>T</mi><mrow><mi>c</mi></mrow></msub></math> of 41.7 K

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Spin-glass behavior with short-range antiferromagnetic order in ${Nd}_{2} {AgIn}_{3}$

D. X. Li; S. Nimori; Y. Shiokawa; A. Tobo; H. Onodera; Y. Haga; E. Yamamoto; Y. Ōnuki

Appl. Phys. Lett. 79, 4183–4185 (2001) https://doi.org/10.1063/1.1428114

Abstract

View articletitled, Spin-glass behavior with short-range antiferromagnetic order in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Nd</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">AgIn</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math>

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Synthesis of superconducting ${Mg/MgB}_{2}$ composites

David C. Dunand

Appl. Phys. Lett. 79, 4186–4188 (2001) https://doi.org/10.1063/1.1427439

Abstract

View articletitled, Synthesis of superconducting <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Mg/MgB</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> composites

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Characteristics of interface-engineered Josephson junctions using a ${YbBa}_{2} {Cu}_{3} O_{y}$ counterelectrode layer

H. Katsuno; S. Inoue; T. Nagano; J. Yoshida

Appl. Phys. Lett. 79, 4189–4191 (2001) https://doi.org/10.1063/1.1428115

Abstract

View articletitled, Characteristics of interface-engineered Josephson junctions using a <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">YbBa</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi>y</mi></mrow></msub></math> counterelectrode layer

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DIELECTRICS AND FERROELECTRICITY

Hafnium interdiffusion studies from hafnium silicate into silicon

M. Quevedo-Lopez; M. El-Bouanani; S. Addepalli; J. L. Duggan; B. E. Gnade; R. M. Wallace; M. R. Visokay; M. Douglas; L. Colombo

Appl. Phys. Lett. 79, 4192–4194 (2001) https://doi.org/10.1063/1.1425466

Abstract

View articletitled, Hafnium interdiffusion studies from hafnium silicate into silicon

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Atomic scale measurements of the interfacial electronic structure and chemistry of zirconium silicate gate dielectrics

David A. Muller; Glen D. Wilk

Appl. Phys. Lett. 79, 4195–4197 (2001) https://doi.org/10.1063/1.1426268

Abstract

View articletitled, Atomic scale measurements of the interfacial electronic structure and chemistry of zirconium silicate gate dielectrics

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Electrical fracture toughness for electrically conductive deep notches driven by electric fields in depoled lead zirconate titanate ceramics

Tianhong Wang; Tong-Yi Zhang

Appl. Phys. Lett. 79, 4198–4200 (2001) https://doi.org/10.1063/1.1427437

Abstract

View articletitled, Electrical fracture toughness for electrically conductive deep notches driven by electric fields in depoled lead zirconate titanate ceramics

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Effect of aluminum substitution in ${La}_{3} {Ga}_{5} {SiO}_{14}$ crystals on their structure and piezoelectricity

Hiroaki Takeda; Makoto Kumatoriya; Tadashi Shiosaki

Appl. Phys. Lett. 79, 4201–4203 (2001) https://doi.org/10.1063/1.1426274

Abstract

View articletitled, Effect of aluminum substitution in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi mathvariant="normal">5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">14</mi></mrow></msub></math> crystals on their structure and piezoelectricity

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Preparation of antiferroelectric ${PbZr}_{x} {Ti}_{1−x} O_{3}$ thin films on ${LaSrMnO}_{3}$ -coated steel substrates

R. Seveno; H. W. Gundel; S. Seifert

Appl. Phys. Lett. 79, 4204–4206 (2001) https://doi.org/10.1063/1.1426695

Abstract

View articletitled, Preparation of antiferroelectric <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">PbZr</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> thin films on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LaSrMnO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math>-coated steel substrates

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NANOSCALE SCIENCE AND DESIGN

Self-assembled patterns of iron oxide nanoparticles by hydrothermal chemical-vapor deposition

Zhengjun Zhang; B. Q. Wei; P. M. Ajayan

Appl. Phys. Lett. 79, 4207–4209 (2001) https://doi.org/10.1063/1.1426256

Abstract

View articletitled, Self-assembled patterns of iron oxide nanoparticles by hydrothermal chemical-vapor deposition

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Imaging the interlayer interactions of multiwall carbon nanotubes using scanning tunneling microscopy and spectroscopy

A. Hassanien; A. Mrzel; M. Tokumoto; D. Tománek

Appl. Phys. Lett. 79, 4210–4212 (2001) https://doi.org/10.1063/1.1427743

Abstract

View articletitled, Imaging the interlayer interactions of multiwall carbon nanotubes using scanning tunneling microscopy and spectroscopy

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Structural deformation of single-walled carbon nanotubes and fullerene encapsulation due to magnetized-plasma ion irradiation

G.-H. Jeong; R. Hatakeyama; T. Hirata; K. Tohji; K. Motomiya; N. Sato; Y. Kawazoe

Appl. Phys. Lett. 79, 4213–4215 (2001) https://doi.org/10.1063/1.1427744

Abstract

View articletitled, Structural deformation of single-walled carbon nanotubes and fullerene encapsulation due to magnetized-plasma ion irradiation

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Quantum dots in suspended single-wall carbon nanotubes

Jesper Nygård; David H. Cobden

Appl. Phys. Lett. 79, 4216–4218 (2001) https://doi.org/10.1063/1.1428117

Abstract

View articletitled, Quantum dots in suspended single-wall carbon nanotubes

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Shape transition of coherent three-dimensional (In,Ga)As islands on GaAs(100)

Wenquan Ma; Richard Nötzel; Hans-Peter Schönherr; Klaus H. Ploog

Appl. Phys. Lett. 79, 4219–4221 (2001) https://doi.org/10.1063/1.1428107

Abstract

View articletitled, Shape transition of coherent three-dimensional (In,Ga)As islands on GaAs(100)

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Luminescence of nanocrystalline ZnSe:Cu

J. F. Suyver; T. van der Beek; S. F. Wuister; J. J. Kelly; A. Meijerink

Appl. Phys. Lett. 79, 4222–4224 (2001) https://doi.org/10.1063/1.1428118

Abstract

View articletitled, Luminescence of nanocrystalline ZnSe:Cu

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Interfacial characteristics of a carbon nanotube–polystyrene composite system

Kin Liao; Sean Li

Appl. Phys. Lett. 79, 4225–4227 (2001) https://doi.org/10.1063/1.1428116

Abstract

View articletitled, Interfacial characteristics of a carbon nanotube–polystyrene composite system

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DEVICE PHYSICS

Current crowding in InAsSb light-emitting diodes

V. K. Malyutenko; O. Yu. Malyutenko; A. D. Podoltsev; I. N. Kucheryavaya; B. A. Matveev; M. A. Remennyi; N. M. Stus’

Appl. Phys. Lett. 79, 4228–4230 (2001) https://doi.org/10.1063/1.1424065

Abstract

View articletitled, Current crowding in InAsSb light-emitting diodes

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Quantum coherent transport versus diode-like effect in semiconductor-free metal/insulator structure

C. Tiusan; M. Chshiev; A. Iovan; V. da Costa; D. Stoeffler; T. Dimopoulos; K. Ounadjela

Appl. Phys. Lett. 79, 4231–4233 (2001) https://doi.org/10.1063/1.1426685

Abstract

View articletitled, Quantum coherent transport versus diode-like effect in semiconductor-free metal/insulator structure

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Bright white organic light-emitting diode

C. W. Ko; Y. T. Tao

Appl. Phys. Lett. 79, 4234–4236 (2001) https://doi.org/10.1063/1.1425454

Abstract

View articletitled, Bright white organic light-emitting diode

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High absorption $(>90%)$ quantum-well infrared photodetectors

H. C. Liu; R. Dudek; A. Shen; E. Dupont; C. Y. Song; Z. R. Wasilewski; M. Buchanan

Appl. Phys. Lett. 79, 4237–4239 (2001) https://doi.org/10.1063/1.1425066

Abstract

View articletitled, High absorption <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(>90%)</mtext></math> quantum-well infrared photodetectors

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Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wells

V. Adivarahan; A. Chitnis; J. P. Zhang; M. Shatalov; J. W. Yang; G. Simin; M. Asif Khan; R. Gaska; M. S. Shur

Appl. Phys. Lett. 79, 4240–4242 (2001) https://doi.org/10.1063/1.1425453

Abstract

View articletitled, Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wells

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Local lattice strain distribution around a transistor channel in metal–oxide–semiconductor devices

Akio Toda; Nobuyuki Ikarashi; Haruhiko Ono; Shinya Ito; Takeshi Toda; Kiyotaka Imai

Appl. Phys. Lett. 79, 4243–4245 (2001) https://doi.org/10.1063/1.1427440

Abstract

View articletitled, Local lattice strain distribution around a transistor channel in metal–oxide–semiconductor devices

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Hole mobility enhancements in strained ${Si/Si}_{1−y} {Ge}_{y}$ p-type metal-oxide-semiconductor field-effect transistors grown on relaxed ${Si}_{1−x} {Ge}_{x}$ $(x<y)$ virtual substrates

C. W. Leitz; M. T. Currie; M. L. Lee; Z.-Y. Cheng; D. A. Antoniadis; E. A. Fitzgerald

Appl. Phys. Lett. 79, 4246–4248 (2001) https://doi.org/10.1063/1.1423774

Abstract

View articletitled, Hole mobility enhancements in strained <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si/Si</mi><mrow><mtext>1−y</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi>y</mi></mrow></msub></math> p-type metal-oxide-semiconductor field-effect transistors grown on relaxed <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi>x</mi></mrow></msub></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(x<y)</mi></math> virtual substrates

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INTERDISCIPLINARY AND GENERAL PHYSICS

Generation of 1.2 ps electrical pulses through parallel gating in ultrathin silicon photoconductive switches

J. F. Holzman; F. E. Vermeulen; A. Y. Elezzabi

Appl. Phys. Lett. 79, 4249–4251 (2001) https://doi.org/10.1063/1.1426263

Abstract

View articletitled, Generation of 1.2 ps electrical pulses through parallel gating in ultrathin silicon photoconductive switches

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

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