Skip Nav Destination
Issues
10 December 2001
ISSN 0003-6951
EISSN 1077-3118
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS
Towards quantum-well resonant-state terahertz laser
I. V. Altukhov; E. G. Chirkova; V. P. Sinis; M. S. Kagan; Yu. P. Gousev; S. G. Thomas; K. L. Wang; M. A. Odnoblyudov; I. N. Yassievich
Appl. Phys. Lett. 79, 3909–3911 (2001)
https://doi.org/10.1063/1.1423771
Problems in recent analysis of injected carrier dynamics in semiconductor quantum dots
Appl. Phys. Lett. 79, 3912–3913 (2001)
https://doi.org/10.1063/1.1426265
Turn-off transients in current-modulated multitransverse-mode vertical-cavity surface-emitting lasers
Appl. Phys. Lett. 79, 3914–3916 (2001)
https://doi.org/10.1063/1.1426269
Measurement of complex optical constants of a highly doped Si wafer using terahertz ellipsometry
Appl. Phys. Lett. 79, 3917–3919 (2001)
https://doi.org/10.1063/1.1426258
Design and simulation of terahertz quantum cascade lasers
Appl. Phys. Lett. 79, 3920–3922 (2001)
https://doi.org/10.1063/1.1423777
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
Measurement of optical properties of highly doped silicon by terahertz time domain reflection spectroscopy
Appl. Phys. Lett. 79, 3923–3925 (2001)
https://doi.org/10.1063/1.1413498
Local structure and chemical valency of Mn impurities in wide-band-gap III–V magnetic alloy semiconductors
Appl. Phys. Lett. 79, 3926–3928 (2001)
https://doi.org/10.1063/1.1423406
Self-assembled GaIn(N)As quantum dots: Enhanced luminescence at 1.3 μm
Appl. Phys. Lett. 79, 3932–3934 (2001)
https://doi.org/10.1063/1.1425082
Individually injected current pulses with conducting-tip, tapping-mode atomic force microscopy
Appl. Phys. Lett. 79, 3935–3937 (2001)
https://doi.org/10.1063/1.1424473
Chemical ordering in lanthanum-doped lead magnesium niobate relaxor ferroelectrics probed by Raman mode
Appl. Phys. Lett. 79, 3938–3940 (2001)
https://doi.org/10.1063/1.1425957
Equation of state of bulk metallic glasses studied by an ultrasonic method
Appl. Phys. Lett. 79, 3947–3949 (2001)
https://doi.org/10.1063/1.1426272
Annealing behavior of vacancies and levels in electron-irradiated 4H–SiC studied by positron annihilation and deep-level transient spectroscopy
A. Kawasuso; F. Redmann; R. Krause-Rehberg; M. Weidner; T. Frank; G. Pensl; P. Sperr; W. Triftshäuser; H. Itoh
Appl. Phys. Lett. 79, 3950–3952 (2001)
https://doi.org/10.1063/1.1426259
Structural and optical properties of ZnO films grown on substrates
Appl. Phys. Lett. 79, 3953–3955 (2001)
https://doi.org/10.1063/1.1426255
Orientation-controlled nucleation of crystal silicon grains in amorphous silicon on a rolled nickel tape substrate
Appl. Phys. Lett. 79, 3956–3958 (2001)
https://doi.org/10.1063/1.1421420
In situ sensor for interstitial trapping during Si thermal oxidation using He implantation-induced voids
Appl. Phys. Lett. 79, 3959–3961 (2001)
https://doi.org/10.1063/1.1426693
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
A self-passivated Cu(Mg) gate electrode for an amorphous silicon thin-film transistor
W. H. Lee; B. S. Cho; B. J. Kang; H. J. Yang; J. G. Lee; I. K. Woo; S. W. Lee; J. Jang; G. S. Chae; H. S. Soh
Appl. Phys. Lett. 79, 3962–3964 (2001)
https://doi.org/10.1063/1.1424062
Grain boundary transport and vapor sensing in α-sexithiophene
Appl. Phys. Lett. 79, 3965–3967 (2001)
https://doi.org/10.1063/1.1423787
Capture and thermal re-emission of carriers in long-wavelength InGaAs/GaAs quantum dots
M. De Giorgi; C. Lingk; G. von Plessen; J. Feldmann; S. De Rinaldis; A. Passaseo; M. De Vittorio; R. Cingolani; M. Lomascolo
Appl. Phys. Lett. 79, 3968–3970 (2001)
https://doi.org/10.1063/1.1421235
Enhanced dopant activation and elimination of end-of-range defects in -implanted silicon-on-insulator by high-density current
Appl. Phys. Lett. 79, 3971–3973 (2001)
https://doi.org/10.1063/1.1423773
Composition dependence of Raman intensity of the nitrogen localized vibrational mode in
Appl. Phys. Lett. 79, 3974–3976 (2001)
https://doi.org/10.1063/1.1424469
Enhancement of parametric pumping due to Andreev reflection
Appl. Phys. Lett. 79, 3977–3979 (2001)
https://doi.org/10.1063/1.1421236
Growth and characterization of p-type single quantum wells using nitrogen and arsenic
K. Ortner; X. C. Zhang; S. Oehling; J. Gerschütz; A. Pfeuffer-Jeschke; V. Hock; C. R. Becker; G. Landwehr; L. W. Molenkamp
Appl. Phys. Lett. 79, 3980–3982 (2001)
https://doi.org/10.1063/1.1425465
MAGNETISM AND SUPERCONDUCTIVITY
Improvement of critical current density in superconductors by Zr doping at ambient pressure
Appl. Phys. Lett. 79, 3983–3985 (2001)
https://doi.org/10.1063/1.1426264
Low-noise magnetometers with asymmetric superconducting quantum interference devices
Appl. Phys. Lett. 79, 3989–3991 (2001)
https://doi.org/10.1063/1.1421226
Reversal modes of exchange-spring magnets revealed by torque magnetometry
Appl. Phys. Lett. 79, 3992–3994 (2001)
https://doi.org/10.1063/1.1425432
tunnel junctions and 19 K low-noise dc superconducting quantum interference devices
Appl. Phys. Lett. 79, 3995–3997 (2001)
https://doi.org/10.1063/1.1424465
Inter- and intragrain transport measurements in deformation textured coated conductors
D. M. Feldmann; D. C. Larbalestier; D. T. Verebelyi; W. Zhang; Q. Li; G. N. Riley; R. Feenstra; A. Goyal; D. F. Lee; M. Paranthaman; D. M. Kroeger; D. K. Christen
Appl. Phys. Lett. 79, 3998–4000 (2001)
https://doi.org/10.1063/1.1425952
Growth of strongly biaxially aligned thin films on sapphire by postannealing of amorphous precursors
A. Berenov; Z. Lockman; X. Qi; J. L. MacManus-Driscoll; Y. Bugoslavsky; L. F. Cohen; M.-H. Jo; N. A. Stelmashenko; V. N. Tsaneva; M. Kambara; N. Hari Babu; D. A. Cardwell; M. G. Blamire
Appl. Phys. Lett. 79, 4001–4003 (2001)
https://doi.org/10.1063/1.1424070
DIELECTRICS AND FERROELECTRICITY
Demonstration of scaled capacitors on W plugs with Al interconnect
S. R. Summerfelt; T. S. Moise; G. Xing; L. Colombo; T. Sakoda; S. R. Gilbert; A. L. S. Loke; S. Ma; L. A. Wills; R. Kavari; T. Hsu; J. Amano; S. T. Johnson; D. J. Vestcyk; M. W. Russell; S. M. Bilodeau; P. van Buskirk
Appl. Phys. Lett. 79, 4004–4006 (2001)
https://doi.org/10.1063/1.1423789
Polarization-graded ferroelectrics: Transpacitor energy gain
Appl. Phys. Lett. 79, 4007–4009 (2001)
https://doi.org/10.1063/1.1425067
High strength, low dielectric constant fluorinated silica xerogel films
Appl. Phys. Lett. 79, 4010–4012 (2001)
https://doi.org/10.1063/1.1418267
NANOSCALE SCIENCE AND DESIGN
Scanning tunneling microscopy-controlled dynamic switching of single nanoparticle luminescence at room temperature
Appl. Phys. Lett. 79, 4013–4015 (2001)
https://doi.org/10.1063/1.1424466
Field emission from porous (100) GaP with modified morphology
Appl. Phys. Lett. 79, 4016–4018 (2001)
https://doi.org/10.1063/1.1425456
Near-field optics: Direct observation of the field enhancement below an apertureless probe using a photosensitive polymer
Appl. Phys. Lett. 79, 4019–4021 (2001)
https://doi.org/10.1063/1.1425083
Visible photoluminescence from ruthenium-doped multiwall carbon nanotubes
Elizabeth C. Dickey; Craig A. Grimes; Mahaveer K. Jain; Keat G. Ong; Dali Qian; P. D. Kichambare; Rodney Andrews; David Jacques
Appl. Phys. Lett. 79, 4022–4024 (2001)
https://doi.org/10.1063/1.1419238
Effect of passivation and aging on the photoluminescence of silicon nanocrystals
Appl. Phys. Lett. 79, 4028–4030 (2001)
https://doi.org/10.1063/1.1426273
DEVICE PHYSICS
Radio-frequency single-electron transistor: Toward the shot-noise limit
Appl. Phys. Lett. 79, 4031–4033 (2001)
https://doi.org/10.1063/1.1424477
Border traps in 6H-SiC metal–oxide–semiconductor capacitors investigated by the thermally-stimulated current technique
Appl. Phys. Lett. 79, 4034–4036 (2001)
https://doi.org/10.1063/1.1424479
Breakdown voltage in thin III–V avalanche photodiodes
Mohammad A. Saleh; Majeed M. Hayat; Oh-Hyun Kwon; Archie L. Holmes, Jr.; Joe C. Campbell; Bahaa E. A. Saleh; Malvin C. Teich
Appl. Phys. Lett. 79, 4037–4039 (2001)
https://doi.org/10.1063/1.1425463
Fast organic electronic circuits based on ambipolar pentacene field-effect transistors
Appl. Phys. Lett. 79, 4043–4044 (2001)
https://doi.org/10.1063/1.1426684
APPLIED BIOPHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS
Electrostatic forces between sharp tips and metallic and dielectric samples
Appl. Phys. Lett. 79, 4048–4050 (2001)
https://doi.org/10.1063/1.1424478
Stability of HF-etched Si(100) surfaces in oxygen ambient
Appl. Phys. Lett. 79, 4051–4053 (2001)
https://doi.org/10.1063/1.1425461
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures
Tomoya Okuda, Shunsuke Ota, et al.
Era of entropy: Synthesis, structure, properties, and applications of high-entropy materials
Christina M. Rost, Alessandro R. Mazza, et al.