Skip Nav Destination
Issues
26 November 2001
ISSN 0003-6951
EISSN 1077-3118
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS
Nanocluster crystals of lacunary polyoxometalates as structure-design-flexible, inorganic nonlinear materials
Hidetoshi Murakami; Toshimasa Kozeki; Yuji Suzuki; Shingo Ono; Hideyuki Ohtake; Nobuhiko Sarukura; Eri Ishikawa; Toshihiro Yamase
Appl. Phys. Lett. 79, 3564–3566 (2001)
https://doi.org/10.1063/1.1419230
Space-selective valence state manipulation of transition metal ions inside glasses by a femtosecond laser
Appl. Phys. Lett. 79, 3567–3569 (2001)
https://doi.org/10.1063/1.1421640
High-performance InAs quantum-dot lasers near 1.3 μm
Appl. Phys. Lett. 79, 3570–3572 (2001)
https://doi.org/10.1063/1.1421428
Monolithic intracavity laser-modulator device fabrication using postgrowth processing of 1.55 μm heterostructures
Appl. Phys. Lett. 79, 3582–3584 (2001)
https://doi.org/10.1063/1.1421234
Modified spontaneous emission in erbium-doped spherical colloids
Appl. Phys. Lett. 79, 3585–3587 (2001)
https://doi.org/10.1063/1.1419033
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
A mechanism for the multiple atomic configurations of inversion domain boundaries in GaN layers grown on Si(111)
Appl. Phys. Lett. 79, 3588–3590 (2001)
https://doi.org/10.1063/1.1396322
First step towards the growth of single-crystal oxides on Si: Formation of a two-dimensional crystalline silicate on Si(001)
Appl. Phys. Lett. 79, 3591–3593 (2001)
https://doi.org/10.1063/1.1415372
Concurrent x-ray diffractometer for high throughput structural diagnosis of epitaxial thin films
M. Ohtani; T. Fukumura; M. Kawasaki; K. Omote; T. Kikuchi; J. Harada; A. Ohtomo; M. Lippmaa; T. Ohnishi; D. Komiyama; R. Takahashi; Y. Matsumoto; H. Koinuma
Appl. Phys. Lett. 79, 3594–3596 (2001)
https://doi.org/10.1063/1.1415402
Mechanical stresses upon crystallization in phase change materials
Appl. Phys. Lett. 79, 3597–3599 (2001)
https://doi.org/10.1063/1.1415419
Band gap bowing and exciton localization in strained cubic films grown on by rf molecular-beam epitaxy
S. F. Chichibu; M. Sugiyama; T. Kuroda; A. Tackeuchi; T. Kitamura; H. Nakanishi; T. Sota; S. P. DenBaars; S. Nakamura; Y. Ishida; H. Okumura
Appl. Phys. Lett. 79, 3600–3602 (2001)
https://doi.org/10.1063/1.1421082
From two-dimensional heterogeneous nucleation-induced kinetic roughening to needle-like pattern formation
Appl. Phys. Lett. 79, 3603–3605 (2001)
https://doi.org/10.1063/1.1421417
Dry thermal oxidation of a graded SiGe layer
Appl. Phys. Lett. 79, 3606–3608 (2001)
https://doi.org/10.1063/1.1415373
Composite diamond-like carbon and silicon carbide tips grown on oblique-cut Si(111) substrates
Appl. Phys. Lett. 79, 3609–3611 (2001)
https://doi.org/10.1063/1.1421427
Optical constants of wurtzite ZnS thin films determined by spectroscopic ellipsometry
Appl. Phys. Lett. 79, 3612–3614 (2001)
https://doi.org/10.1063/1.1419229
Surface morphology evolution during the overgrowth of large InAs–GaAs quantum dots
Appl. Phys. Lett. 79, 3615–3617 (2001)
https://doi.org/10.1063/1.1420579
Multipeak negative-differential-resistance device by combining single-electron and metal–oxide–semiconductor transistors
Appl. Phys. Lett. 79, 3618–3620 (2001)
https://doi.org/10.1063/1.1421085
Melting temperature effects on the size of ion-induced craters
Appl. Phys. Lett. 79, 3624–3626 (2001)
https://doi.org/10.1063/1.1421237
Electric field tuning of a stop band in a reflection spectrum of synthetic opal infiltrated with nematic liquid crystal
Appl. Phys. Lett. 79, 3627–3629 (2001)
https://doi.org/10.1063/1.1421080
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
Role of annealing conditions and surface treatment on ohmic contacts to and superlattices
Appl. Phys. Lett. 79, 3636–3638 (2001)
https://doi.org/10.1063/1.1423387
Terahertz gain in a SiGe/Si quantum staircase utilizing the heavy-hole inverted effective mass
Appl. Phys. Lett. 79, 3639–3641 (2001)
https://doi.org/10.1063/1.1421079
Field-emission characteristics and large current density of heavily Si-doped AlN and
Appl. Phys. Lett. 79, 3642–3644 (2001)
https://doi.org/10.1063/1.1421223
MAGNETISM AND SUPERCONDUCTIVITY
Shape-dependent magnetization reversal processes and flux-closure configurations of microstructured epitaxial Fe(110) elements
C. König; M. Sperlich; R. Heinesch; R. Calarco; J. O. Hauch; U. Rüdiger; G. Güntherodt; S. Kirsch; B. Özyilmaz; A. D. Kent
Appl. Phys. Lett. 79, 3648–3650 (2001)
https://doi.org/10.1063/1.1418033
Large magnetoresistance in postannealed Bi thin films
Sunglae Cho; Yunki Kim; A. J. Freeman; G. K. L. Wong; J. B. Ketterson; L. J. Olafsen; I. Vurgaftman; J. R. Meyer; C. A. Hoffman
Appl. Phys. Lett. 79, 3651–3653 (2001)
https://doi.org/10.1063/1.1416157
Spin-dependent transport in the double-perovskite
Appl. Phys. Lett. 79, 3654–3656 (2001)
https://doi.org/10.1063/1.1421227
Why are sputter deposited thin films flatter than films?
Appl. Phys. Lett. 79, 3660–3662 (2001)
https://doi.org/10.1063/1.1421622
Suppression of interlayer coupling and enhancement of magnetoresistance in spin valves with oxide layer
Appl. Phys. Lett. 79, 3663–3665 (2001)
https://doi.org/10.1063/1.1421228
DIELECTRICS AND FERROELECTRICITY
Ferroelectric thin films with high polarization grown on an layer
Appl. Phys. Lett. 79, 3672–3674 (2001)
https://doi.org/10.1063/1.1421078
Negligible oxygen liberation during bipolar electric cycling of ferroelectric lead zirconate titanate ceramics
Appl. Phys. Lett. 79, 3675–3677 (2001)
https://doi.org/10.1063/1.1421089
Direct hysteresis measurements of single nanosized ferroelectric capacitors contacted with an atomic force microscope
S. Tiedke; T. Schmitz; K. Prume; A. Roelofs; T. Schneller; U. Kall; R. Waser; C. S. Ganpule; V. Nagarajan; A. Stanishevsky; R. Ramesh
Appl. Phys. Lett. 79, 3678–3680 (2001)
https://doi.org/10.1063/1.1421638
NANOSCALE SCIENCE AND DESIGN
Matrix effects on the structural and optical properties of InAs quantum dots
Appl. Phys. Lett. 79, 3681–3683 (2001)
https://doi.org/10.1063/1.1416162
Backscattering in carbon nanotubes: Role of quantum interference effects
Appl. Phys. Lett. 79, 3690–3692 (2001)
https://doi.org/10.1063/1.1421643
Optical characterization of wurtzite gallium nitride nanowires
Appl. Phys. Lett. 79, 3693–3695 (2001)
https://doi.org/10.1063/1.1416476
Ultrahigh-density nanotransistors by using selectively grown vertical carbon nanotubes
Appl. Phys. Lett. 79, 3696–3698 (2001)
https://doi.org/10.1063/1.1419236
Preparation and structure analysis of titanium oxide nanotubes
Appl. Phys. Lett. 79, 3702–3704 (2001)
https://doi.org/10.1063/1.1423403
Enhancement of oxidation rate of -Si nanoparticles during dehydrogenation
Appl. Phys. Lett. 79, 3705–3707 (2001)
https://doi.org/10.1063/1.1420533
Determination of performance on tunnel conduction through molecular wire using a conductive atomic force microscope
Hiroshi Sakaguchi; Atsushi Hirai; Futoshi Iwata; Akira Sasaki; Toshihiko Nagamura; Etsuya Kawata; Seiichiro Nakabayashi
Appl. Phys. Lett. 79, 3708–3710 (2001)
https://doi.org/10.1063/1.1421233
DEVICE PHYSICS
Efficient green organic light-emitting diodes with stericly hindered coumarin dopants
Appl. Phys. Lett. 79, 3711–3713 (2001)
https://doi.org/10.1063/1.1420583
Organic thin-film transistors based on bis(1,2,5-thiadiazolo)-p-quinobis (1,3-dithiole)
Appl. Phys. Lett. 79, 3714–3716 (2001)
https://doi.org/10.1063/1.1420777
Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction
M. Diagne; Y. He; H. Zhou; E. Makarona; A. V. Nurmikko; J. Han; K. E. Waldrip; J. J. Figiel; T. Takeuchi; M. Krames
Appl. Phys. Lett. 79, 3720–3722 (2001)
https://doi.org/10.1063/1.1415405
Temperature dependence of electroluminescence intensity of green and blue InGaN single-quantum-well light-emitting diodes
Appl. Phys. Lett. 79, 3723–3725 (2001)
https://doi.org/10.1063/1.1421416
Energy-level alignment at the tris-(8-hydroxyquinolate)-aluminum/Gd interface and Gd-electron-injection layer for organic electroluminescent device
Shin Cheul Kim; Soon Nam Kwon; Myung-Woon Choi; Chung Nam Whang; Kwangho Jeong; Sam Hyeon Lee; Jae-Gyoung Lee; Sunwook Kim
Appl. Phys. Lett. 79, 3726–3728 (2001)
https://doi.org/10.1063/1.1421414
INTERDISCIPLINARY AND GENERAL PHYSICS
Heterodyne electrostatic imaging of polarization due to a surface acoustic wave
Appl. Phys. Lett. 79, 3729–3731 (2001)
https://doi.org/10.1063/1.1421225
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
Significant improvement of breakdown voltage of Al0.86Ga0.14N Schottky barrier diodes by atomic layer etching
Tingang Liu, Zhiyuan Liu, et al.
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.