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Volume 79, Issue 12

17 September 2001

Applied Physics Letters Cover Image for Volume 79, Issue 12

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
PLASMAS AND ELECTRICAL DISCHARGES
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
NANOSCALE SCIENCE AND DESIGN
DEVICE PHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS
ERRATA

LASERS, OPTICS, AND OPTOELECTRONICS

Continuous-wave operation of a 5.2 μm quantum-cascade laser up to 210 K

Brian Ishaug; Wen-Yen Hwang; Jae Um; Bujin Guo; Hao Lee; Chih-Hsiang Lin

Appl. Phys. Lett. 79, 1745–1747 (2001) https://doi.org/10.1063/1.1402644

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Three-photon phenomena in the upconversion luminescence of erbium–ytterbium-codoped phosphate glass

Feng Song; Guangyin Zhang; Meiru Shang; Hao Tan; Jia Yang; Fanzhen Meng

Appl. Phys. Lett. 79, 1748–1750 (2001) https://doi.org/10.1063/1.1404996

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Laser frequency converter for continuous-wave tunable Ti:sapphire lasers based on aperiodically poled ${LiNbO}_{3} : {Nd}^{3+}$

J. Capmany; J. A. Pereda; V. Bermúdez; D. Callejo; E. Diéguez

Appl. Phys. Lett. 79, 1751–1753 (2001) https://doi.org/10.1063/1.1404123

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Orientation-controlled epitaxy of $A_{2} {CuO}_{3}$ (A: Sr, Ca) films with large optical nonlinearity

T. Manako; Y. Okimoto; M. Izumi; S. Shinomori; M. Kawasaki; H. Kishida; H. Okamoto; T. Fukumura; M. Ohtani; Y. Tokura

Appl. Phys. Lett. 79, 1754–1756 (2001) https://doi.org/10.1063/1.1402161

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Formation and decay of nonbridging oxygen hole centers in ${SiO}_{2}$ glasses induced by $F_{2}$ laser irradiation: In situ observation using a pump and probe technique

Koichi Kajihara; Linards Skuja; Masahiro Hirano; Hideo Hosono

Appl. Phys. Lett. 79, 1757–1759 (2001) https://doi.org/10.1063/1.1404407

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Vertical and lateral heterogeneous integration

Jon Geske; Yae L. Okuno; John E. Bowers; Vijay Jayaraman

Appl. Phys. Lett. 79, 1760–1762 (2001) https://doi.org/10.1063/1.1404399

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Optical gain and saturation in nitride-based laser structures

M. Vehse; P. Michler; O. Lange; M. Röwe; J. Gutowski; S. Bader; H.-J. Lugauer; G. Brüderl; A. Weimar; A. Lell; V. Härle

Appl. Phys. Lett. 79, 1763–1765 (2001) https://doi.org/10.1063/1.1401780

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Continuous room-temperature operation of electrically pumped quantum-dot microcylinder lasers

M. Arzberger; G. Böhm; M.-C. Amann; G. Abstreiter

Appl. Phys. Lett. 79, 1766–1768 (2001) https://doi.org/10.1063/1.1403656

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PLASMAS AND ELECTRICAL DISCHARGES

Comparison of negative-ion and positive-ion-assisted etching of silicon

Sivananda K. Kanakasabapathy; Marwan H. Khater; Lawrence J. Overzet

Appl. Phys. Lett. 79, 1769–1771 (2001) https://doi.org/10.1063/1.1400765

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Variance method for the evaluation of particle size and dislocation density from x-ray Bragg peaks

A. Borbély; I. Groma

Appl. Phys. Lett. 79, 1772–1774 (2001) https://doi.org/10.1063/1.1404134

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Electronic structure of noncrystalline transition metal silicate and aluminate alloys

G. Lucovsky; G. B. Rayner, Jr.; D. Kang; G. Appel; R. S. Johnson; Y. Zhang; D. E. Sayers; H. Ade; J. L. Whitten

Appl. Phys. Lett. 79, 1775–1777 (2001) https://doi.org/10.1063/1.1404997

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Radial-pattern formation in the polycarbonate substratum of recordable compact disks

M. Tanimura; I. Ishikawa; M. Tachibana; K. Shinozaki; K. Kojima

Appl. Phys. Lett. 79, 1778–1780 (2001) https://doi.org/10.1063/1.1400778

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Antiphase-boundary extension in single-variant CuPt–B ordered ${Ga}_{0.47} {In}_{0.53} As$ on InP

S. P. Ahrenkiel; M. C. Hanna

Appl. Phys. Lett. 79, 1781–1782 (2001) https://doi.org/10.1063/1.1403255

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Atomic-scale surface control and second-harmonic generation in ${Gd}_{x} Y_{1−x} {Ca}_{4} {O(BO}_{3})_{3}$ thin films grown by combinatorial laser molecular-beam epitaxy

T.-W. Kim; N. Arai; H. Koinuma; Y. Matsumoto; M. Yoshimura; H. Furuya; H. Nakao; Y. Mori; T. Sasaki

Appl. Phys. Lett. 79, 1783–1785 (2001) https://doi.org/10.1063/1.1402964

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A-site surface termination in strontium titanate single crystals

A. G. Schrott; J. A. Misewich; M. Copel; D. W. Abraham; Y. Zhang

Appl. Phys. Lett. 79, 1786–1788 (2001) https://doi.org/10.1063/1.1404129

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Cathodoluminescence study of diluted magnetic semiconductor quantum well/micromagnet hybrid structures

J. Kossut; I. Yamakawa; A. Nakamura; G. Cywiński; K. Fronc; M. Czeczott; J. Wróbel; F. Kyrychenko; T. Wojtowicz; S. Takeyama

Appl. Phys. Lett. 79, 1789–1791 (2001) https://doi.org/10.1063/1.1405150

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Investigation of short-range order in nanocrystal-forming ${Zr}_{60} {Cu}_{20} {Pd}_{10} {Al}_{10}$ metallic glass and the mechanism of nanocrystal formation

Cang Fan; Muneyuki Imafuku; Hiroshi Kurokawa; Akihisa Inoue; Volker Haas

Appl. Phys. Lett. 79, 1792–1794 (2001) https://doi.org/10.1063/1.1404128

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Structural effects of the thermal treatment on a GaInNAs/GaAs superlattice

L. Largeau; C. Bondoux; G. Patriarche; C. Asplund; A. Fujioka; F. Salomonsson; M. Hammar

Appl. Phys. Lett. 79, 1795–1797 (2001) https://doi.org/10.1063/1.1405002

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Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction

T. Tezuka; N. Sugiyama; S. Takagi

Appl. Phys. Lett. 79, 1798–1800 (2001) https://doi.org/10.1063/1.1404409

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Growth front roughening of room-temperature deposited oligomer films

D. Tsamouras; G. Palasantzas; J. Th. M. De Hosson

Appl. Phys. Lett. 79, 1801–1803 (2001) https://doi.org/10.1063/1.1404132

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Influence of Si growth temperature for embedding β- ${FeSi}_{2}$ and resultant strain in β- ${FeSi}_{2}$ on light emission from $p- Si /β- {FeSi}_{2} particles /$ $n- Si$ light-emitting diodes

T. Suemasu; Y. Negishi; K. Takakura; F. Hasegawa; T. Chikyow

Appl. Phys. Lett. 79, 1804–1806 (2001) https://doi.org/10.1063/1.1405001

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Lattice constant variation and complex formation in zincblende gallium manganese arsenide

G. M. Schott; W. Faschinger; L. W. Molenkamp

Appl. Phys. Lett. 79, 1807–1809 (2001) https://doi.org/10.1063/1.1403238

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Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys

Q. Li; S. J. Xu; W. C. Cheng; M. H. Xie; S. Y. Tong; C. M. Che; H. Yang

Appl. Phys. Lett. 79, 1810–1812 (2001) https://doi.org/10.1063/1.1403655

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Experimental comparison between optical spectroscopy and laser-ultrasound generation in polymer-matrix composites

Marc Dubois; Peter W. Lorraine; Robert J. Filkins; Thomas E. Drake

Appl. Phys. Lett. 79, 1813–1815 (2001) https://doi.org/10.1063/1.1400776

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Ohmic contact formation mechanism of Ni on $n$ -type 4H–SiC

Sang Youn Han; Ki Hong Kim; Jong Kyu Kim; Ho Won Jang; Kwang Ho Lee; Nam-Kyun Kim; Eun Dong Kim; Jong-Lam Lee

Appl. Phys. Lett. 79, 1816–1818 (2001) https://doi.org/10.1063/1.1404998

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Formation of location-controlled crystalline islands using substrate-embedded seeds in excimer-laser crystallization of silicon films

Paul Ch. van der Wilt; B. D. van Dijk; G. J. Bertens; R. Ishihara; C. I. M. Beenakker

Appl. Phys. Lett. 79, 1819–1821 (2001) https://doi.org/10.1063/1.1402641

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Low-resistance and thermally stable ohmic contact on $p$ -type GaN using Pd/Ni metallization

Ho Won Jang; Ki Hong Kim; Jong Kyu Kim; Soon-Won Hwang; Jung Ja Yang; Kang Jae Lee; Sung-Jin Son; Jong-Lam Lee

Appl. Phys. Lett. 79, 1822–1824 (2001) https://doi.org/10.1063/1.1403660

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Back-channel-type scanning charge pumping method for characterization of interface traps in silicon-on-insulator wafer

Haruhiko Yoshida; Hiroshi Sasakura; Tomoyuki Yabuuchi; Toshinori Takami; Takayuki Uchihashi; Seigo Kishino

Appl. Phys. Lett. 79, 1825–1827 (2001) https://doi.org/10.1063/1.1399311

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Single electron tunneling detected by electrostatic force

Levente J. Klein; Clayton C. Williams

Appl. Phys. Lett. 79, 1828–1830 (2001) https://doi.org/10.1063/1.1403256

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Modified Airy function method for modeling of direct tunneling current in metal–oxide–semiconductor structures

Jing Wang; Yutao Ma; Lilin Tian; Zhijian Li

Appl. Phys. Lett. 79, 1831–1833 (2001) https://doi.org/10.1063/1.1403658

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Fermi level dependence of hydrogen diffusivity in GaN

A. Y. Polyakov; N. B. Smirnov; S. J. Pearton; F. Ren; B. Theys; F. Jomard; Z. Teukam; V. A. Dmitriev; A. E. Nikolaev; A. S. Usikov; I. P. Nikitina

Appl. Phys. Lett. 79, 1834–1836 (2001) https://doi.org/10.1063/1.1404398

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MAGNETISM AND SUPERCONDUCTIVITY

Direct observation of nanometer-scale Mg- and B-oxide phases at grain boundaries in ${MgB}_{2}$

R. F. Klie; J. C. Idrobo; N. D. Browning; K. A. Regan; N. S. Rogado; R. J. Cava

Appl. Phys. Lett. 79, 1837–1839 (2001) https://doi.org/10.1063/1.1404127

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Superconducting properties of nanocrystalline ${MgB}_{2}$ thin films made by an in situ annealing process

X. H. Zeng; A. Sukiasyan; X. X. Xi; Y. F. Hu; E. Wertz; Qi Li; W. Tian; H. P. Sun; X. Q. Pan; J. Lettieri; D. G. Schlom; C. O. Brubaker; Zi-Kui Liu; Qiang Li

Appl. Phys. Lett. 79, 1840–1842 (2001) https://doi.org/10.1063/1.1405431

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Beneficial effect of Gd substitution on magnetic properties of magnetically anisotropic ${SmCo}_{5}$ ribbons

Wen-yong Zhang; Bao-gen Shen; Zhao-hua Cheng; Long Li; Yu-qing Zhou; Jian-qi Li

Appl. Phys. Lett. 79, 1843–1845 (2001) https://doi.org/10.1063/1.1401789

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Magnetic properties of the MnBi intermetallic compound

J. B. Yang; K. Kamaraju; W. B. Yelon; W. J. James; Q. Cai; A. Bollero

Appl. Phys. Lett. 79, 1846–1848 (2001) https://doi.org/10.1063/1.1405434

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Enhanced magneto-optical Kerr effects and decreased Curie temperature in Co–Mn ferrite thin films

Biao Zhou; Ya-Wen Zhang; Chun-Sheng Liao; Fu-Xiang Cheng; Chun-Hua Yan; Liang-Yao Chen; Song-You Wang

Appl. Phys. Lett. 79, 1849–1851 (2001) https://doi.org/10.1063/1.1402656

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DIELECTRICS AND FERROELECTRICITY

Thermally stable dynamic piezoelectricity in sandwich films of porous and nonporous amorphous fluoropolymer

Axel Mellinger; Michael Wegener; Werner Wirges; Reimund Gerhard-Multhaupt

Appl. Phys. Lett. 79, 1852–1854 (2001) https://doi.org/10.1063/1.1404405

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Metal drift behavior in low dielectric constant organosiloxane polymer

A. Mallikarjunan; S. P. Murarka; T.-M. Lu

Appl. Phys. Lett. 79, 1855–1857 (2001) https://doi.org/10.1063/1.1404408

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Interface control of ${Bi}_{4} {Ti}_{3} O_{12}$ film growth on Si(100) by use of an ultrathin silicon oxynitride buffer layer

E. Rokuta; J.-H. Choi; Y. Hotta; H. Tabata; H. Kobayashi; T. Kawai

Appl. Phys. Lett. 79, 1858–1860 (2001) https://doi.org/10.1063/1.1400078

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Tailoring the temperature coefficient of capacitance in ferroelectric varactors

S. Gevorgian; P. K. Petrov; Z. Ivanov; E. Wikborg

Appl. Phys. Lett. 79, 1861–1863 (2001) https://doi.org/10.1063/1.1402637

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NANOSCALE SCIENCE AND DESIGN

Formation of coupled quantum dots in single-wall carbon nanotubes

K. Ishibashi; M. Suzuki; T. Ida; Y. Aoyagi

Appl. Phys. Lett. 79, 1864–1866 (2001) https://doi.org/10.1063/1.1403295

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Effects of $O_{2},$ Ar, and $H_{2}$ gases on the field-emission properties of single-walled and multiwalled carbon nanotubes

A. Wadhawan; R. E. Stallcup, II; K. F. Stephens, II; J. M. Perez; I. A. Akwani

Appl. Phys. Lett. 79, 1867–1869 (2001) https://doi.org/10.1063/1.1401785

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Enhanced luminescence from the disordered quantum-wire superlattice

Akio Sasaki; Ryohei Okanishi; Xinquan Liu; Xuelun Wang; Mutsuo Ogura

Appl. Phys. Lett. 79, 1870–1872 (2001) https://doi.org/10.1063/1.1401088

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Evaporation of carbon nanotubes during electron field emission

Kenneth A. Dean; Timothy P. Burgin; Babu R. Chalamala

Appl. Phys. Lett. 79, 1873–1875 (2001) https://doi.org/10.1063/1.1402157

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Formation of metal particle nanowires induced by ultrashort laser pulses

M. Kaempfe; H. Graener; A. Kiesow; A. Heilmann

Appl. Phys. Lett. 79, 1876–1878 (2001) https://doi.org/10.1063/1.1403661

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Straight carbon nanotube Y junctions

W. Z. Li; J. G. Wen; Z. F. Ren

Appl. Phys. Lett. 79, 1879–1881 (2001) https://doi.org/10.1063/1.1404400

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Nanoscale patterning of Si(100) surfaces by scratching through the native oxide layer using atomic force microscope

L. Santinacci; T. Djenizian; P. Schmuki

Appl. Phys. Lett. 79, 1882–1884 (2001) https://doi.org/10.1063/1.1404195

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Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy

Y. T. Sun; E. Rodrı́guez Messmer; S. Lourdudoss; J. Ahopelto; S. Rennon; J. P. Reithmaier; A. Forchel

Appl. Phys. Lett. 79, 1885–1887 (2001) https://doi.org/10.1063/1.1401781

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Squeezing out hidden force information from scanning force microscopes

Brian A. Todd; Steven J. Eppell; Fredy R. Zypman

Appl. Phys. Lett. 79, 1888–1890 (2001) https://doi.org/10.1063/1.1405430

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DEVICE PHYSICS

Light responsive polymer field-effect transistor

K. S. Narayan; N. Kumar

Appl. Phys. Lett. 79, 1891–1893 (2001) https://doi.org/10.1063/1.1404131

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Enhanced photogeneration of carriers in a semiconductor via coupling across a nonisothermal nanoscale vacuum gap

R. S. DiMatteo; P. Greiff; S. L. Finberg; K. A. Young-Waithe; H. K. H. Choy; M. M. Masaki; C. G. Fonstad

Appl. Phys. Lett. 79, 1894–1896 (2001) https://doi.org/10.1063/1.1400762

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Scanning probe electromagnetic tweezers

Mladen Barbic; Jack J. Mock; Andrew P. Gray; S. Schultz

Appl. Phys. Lett. 79, 1897–1899 (2001) https://doi.org/10.1063/1.1402963

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Investigation of spurious velocity overshoot using Monte Carlo data

T. Grasser; H. Kosina; S. Selberherr

Appl. Phys. Lett. 79, 1900–1902 (2001) https://doi.org/10.1063/1.1405000

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Indium–silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectors

V. Adivarahan; G. Simin; G. Tamulaitis; R. Srinivasan; J. Yang; M. Asif Khan; M. S. Shur; R. Gaska

Appl. Phys. Lett. 79, 1903–1905 (2001) https://doi.org/10.1063/1.1402159

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Dynamics of the response to microwave radiation in ${YBa}_{2} {Cu}_{3} O_{7−x}$ hot-electron bolometer mixers

Oliver Harnack; Konstantin S. Il’in; Michael Siegel; Boris S. Karasik; William R. McGrath; Gert de Lange

Appl. Phys. Lett. 79, 1906–1908 (2001) https://doi.org/10.1063/1.1401095

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Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates

C. P. Jiang; Z. M. Huang; S. L. Guo; J. H. Chu; L. J. Cui; Y. P. Zeng; Z. P. Zhu; B. Q. Wang

Appl. Phys. Lett. 79, 1909–1911 (2001) https://doi.org/10.1063/1.1396625

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INTERDISCIPLINARY AND GENERAL PHYSICS

Reconstructing x-ray fluorescence microtomograms

Christian G. Schroer

Appl. Phys. Lett. 79, 1912–1914 (2001) https://doi.org/10.1063/1.1402643

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Quantitative atom-resolved force gradient imaging using noncontact atomic force microscopy

Ahmet Oral; Ralph A. Grimble; H. Özgür Özer; Peter M. Hoffmann; John B. Pethica

Appl. Phys. Lett. 79, 1915–1917 (2001) https://doi.org/10.1063/1.1389785

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Symmetry dependence of x-ray absorption near-edge structure at the metal $K$ edge of $3d$ transition metal compounds

Ziyu Wu; D. C. Xian; C. R. Natoli; A. Marcelli; E. Paris; A. Mottana

Appl. Phys. Lett. 79, 1918–1920 (2001) https://doi.org/10.1063/1.1405149

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ERRATA

Erratum: “Ultraviolet–visible near-field microscopy of phase-separated blends of polyfluorene-based conjugated semiconductors” [Appl. Phys. Lett. 79, 833 (2001)]

R. Stevenson; R. Riehn; R. G. Milner; D. Richards; E. Moons; D.-J. Kang; M. Blamire; J. Morgado; F. Cacialli

Appl. Phys. Lett. 79, 1921–1922 (2001) https://doi.org/10.1063/1.1404775

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