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LASERS, OPTICS, AND OPTOELECTRONICS

Two-photon photopolymerization and diagnosis of three-dimensional microstructures containing fluorescent dyes

Hong-Bo Sun; Tomokazu Tanaka; Kenji Takada; Satoshi Kawata

Appl. Phys. Lett. 79, 1411–1413 (2001) https://doi.org/10.1063/1.1399312

Abstract

View articletitled, Two-photon photopolymerization and diagnosis of three-dimensional microstructures containing fluorescent dyes

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Room-temperature lasing of InGaN multiquantum-well hexagonal microfacet lasers by current injection

Tetsuya Akasaka; Seigo Ando; Toshio Nishida; Hisao Saito; Naoki Kobayashi

Appl. Phys. Lett. 79, 1414–1416 (2001) https://doi.org/10.1063/1.1398322

Abstract

View articletitled, Room-temperature lasing of InGaN multiquantum-well hexagonal microfacet lasers by current injection

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Gain mechanism in GaN Schottky ultraviolet detectors

O. Katz; V. Garber; B. Meyler; G. Bahir; J. Salzman

Appl. Phys. Lett. 79, 1417–1419 (2001) https://doi.org/10.1063/1.1394717

Abstract

View articletitled, Gain mechanism in GaN Schottky ultraviolet detectors

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Evolution of anisotropic reflection gratings formed in holographic polymer-dispersed liquid crystals

R. L. Sutherland; V. P. Tondiglia; L. V. Natarajan; T. J. Bunning

Appl. Phys. Lett. 79, 1420–1422 (2001) https://doi.org/10.1063/1.1399303

Abstract

View articletitled, Evolution of anisotropic reflection gratings formed in holographic polymer-dispersed liquid crystals

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Fixing solitonic $y$ junctions in photorefractive strontium–barium–niobate

Matthew Klotz; Mike Crosser; Aqiang Guo; Michael Henry; Gregory J. Salamo; Mordechai Segev; Gary L. Wood

Appl. Phys. Lett. 79, 1423–1425 (2001) https://doi.org/10.1063/1.1389824

Abstract

View articletitled, Fixing solitonic <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">y</mi></math> junctions in photorefractive strontium–barium–niobate

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Optical transparency of metallic ${La}_{0.5} {Sr}_{0.5} {TiO}_{3+δ}$ thin films

J. H. Cho; H. J. Cho

Appl. Phys. Lett. 79, 1426–1428 (2001) https://doi.org/10.1063/1.1402961

Abstract

View articletitled, Optical transparency of metallic <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mi mathvariant="normal">0.5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mi mathvariant="normal">0.5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mtext>3+δ</mtext></mrow></msub></math> thin films

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PLASMAS AND ELECTRICAL DISCHARGES

Depth dependence of {311} defect dissolution

V. C. Venezia; R. Kalyanaraman; H.-J. L. Gossmann; C. S. Rafferty; P. Werner

Appl. Phys. Lett. 79, 1429–1431 (2001) https://doi.org/10.1063/1.1392972

Abstract

View articletitled, Depth dependence of {311} defect dissolution

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Interpretation of double x-ray diffraction peaks from InGaN layers

S. Pereira; M. R. Correia; E. Pereira; K. P. O’Donnell; E. Alves; A. D. Sequeira; N. Franco

Appl. Phys. Lett. 79, 1432–1434 (2001) https://doi.org/10.1063/1.1397276

Abstract

View articletitled, Interpretation of double x-ray diffraction peaks from InGaN layers

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Dependence of the emission wavelength on the internal electric field in quantum-dot laser structures grown by metal–organic chemical-vapor deposition

A. Passaseo; G. Maruccio; M. De Vittorio; S. De Rinaldis; T. Todaro; R. Rinaldi; R. Cingolani

Appl. Phys. Lett. 79, 1435–1437 (2001) https://doi.org/10.1063/1.1400088

Abstract

View articletitled, Dependence of the emission wavelength on the internal electric field in quantum-dot laser structures grown by metal–organic chemical-vapor deposition

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Amorphous-iron disilicide: A promising semiconductor

M. Milosavljević; G. Shao; N. Bibić; C. N. McKinty; C. Jeynes; K. P. Homewood

Appl. Phys. Lett. 79, 1438–1440 (2001) https://doi.org/10.1063/1.1400760

Abstract

View articletitled, Amorphous-iron disilicide: A promising semiconductor

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Synthesis and characterization of highly-conducting nitrogen-doped ultrananocrystalline diamond films

S. Bhattacharyya; O. Auciello; J. Birrell; J. A. Carlisle; L. A. Curtiss; A. N. Goyette; D. M. Gruen; A. R. Krauss; J. Schlueter; A. Sumant; P. Zapol

Appl. Phys. Lett. 79, 1441–1443 (2001) https://doi.org/10.1063/1.1400761

Abstract

View articletitled, Synthesis and characterization of highly-conducting nitrogen-doped ultrananocrystalline diamond films

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Influence of dose rate and temperature on ion-beam-induced defect evolution in Si investigated by channeling implantation at different doses

M. Posselt; L. Bischoff; J. Teichert

Appl. Phys. Lett. 79, 1444–1446 (2001) https://doi.org/10.1063/1.1396319

Abstract

View articletitled, Influence of dose rate and temperature on ion-beam-induced defect evolution in Si investigated by channeling implantation at different doses

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Growth mode transition from layer by layer to step flow during the growth of heteroepitaxial ${SrRuO}_{3}$ on (001) ${SrTiO}_{3}$

J. Choi; C. B. Eom; G. Rijnders; H. Rogalla; D. H. A. Blank

Appl. Phys. Lett. 79, 1447–1449 (2001) https://doi.org/10.1063/1.1389837

Abstract

View articletitled, Growth mode transition from layer by layer to step flow during the growth of heteroepitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrRuO</mi><mrow><mn>3</mn></mrow></msub></math> on (001) <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrTiO</mi><mrow><mn>3</mn></mrow></msub></math>

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Ab initio calculations of the mechanical properties of ${Ti}_{3} {SiC}_{2}$

Bengt Holm; Rajeev Ahuja; Börje Johansson

Appl. Phys. Lett. 79, 1450–1452 (2001) https://doi.org/10.1063/1.1392981

Abstract

View articletitled, Ab initio calculations of the mechanical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">SiC</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math>

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Interstitial oxygen loss and the formation of thermal double donors in Si

Young Joo Lee; J. von Boehm; R. M. Nieminen

Appl. Phys. Lett. 79, 1453–1455 (2001) https://doi.org/10.1063/1.1389505

Abstract

View articletitled, Interstitial oxygen loss and the formation of thermal double donors in Si

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Processing of carbon-fiber-reinforced ${Zr}_{41.2} {Ti}_{13.8} {Cu}_{12.5} {Ni}_{10.0} {Be}_{22.5}$ bulk metallic glass composites

C. P. Kim; R. Busch; A. Masuhr; H. Choi-Yim; W. L. Johnson

Appl. Phys. Lett. 79, 1456–1458 (2001) https://doi.org/10.1063/1.1390317

Abstract

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Growth of crack-free hexagonal GaN films on Si(100)

J. Wan; R. Venugopal; M. R. Melloch; H. M. Liaw; W. J. Rummel

Appl. Phys. Lett. 79, 1459–1461 (2001) https://doi.org/10.1063/1.1400770

Abstract

View articletitled, Growth of crack-free hexagonal GaN films on Si(100)

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Metal/III–V diodes engineered by means of Si interlayers: Interface reactions versus local interface dipoles

B. Bonanni; D. Orani; M. Lazzarino; S. Rubini; A. Franciosi

Appl. Phys. Lett. 79, 1462–1464 (2001) https://doi.org/10.1063/1.1399310

Abstract

View articletitled, Metal/III–V diodes engineered by means of Si interlayers: Interface reactions versus local interface dipoles

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Coulomb blockade in multiwalled carbon nanotube island with nanotube leads

Nobuhide Yoneya; Eiichirou Watanabe; Kazuhito Tsukagoshi; Yoshinobu Aoyagi

Appl. Phys. Lett. 79, 1465–1467 (2001) https://doi.org/10.1063/1.1399301

Abstract

View articletitled, Coulomb blockade in multiwalled carbon nanotube island with nanotube leads

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Effect of N/Ge co-implantation on the Ge activation in GaN

Yoshitaka Nakano; Tetsu Kachi

Appl. Phys. Lett. 79, 1468–1470 (2001) https://doi.org/10.1063/1.1400089

Abstract

View articletitled, Effect of N/Ge co-implantation on the Ge activation in GaN

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Efficient electronic cooling in heavily doped silicon by quasiparticle tunneling

A. M. Savin; M. Prunnila; P. P. Kivinen; J. P. Pekola; J. Ahopelto; A. J. Manninen

Appl. Phys. Lett. 79, 1471–1473 (2001) https://doi.org/10.1063/1.1399313

Abstract

View articletitled, Efficient electronic cooling in heavily doped silicon by quasiparticle tunneling

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Strain and composition distribution in uncapped SiGe islands from x-ray diffraction

J. Stangl; A. Daniel; V. Holý; T. Roch; G. Bauer; I. Kegel; T. H. Metzger; Th. Wiebach; O. G. Schmidt; K. Eberl

Appl. Phys. Lett. 79, 1474–1476 (2001) https://doi.org/10.1063/1.1392975

Abstract

View articletitled, Strain and composition distribution in uncapped SiGe islands from x-ray diffraction

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Crystal orientation dependence of optical gain in InGaN/GaN multiple-quantum-well structures

Chii-Chang Chen; Kun-Long Hsieh; Jinn-Kong Sheu; Gou-Chung Chi; Ming-Juinn Jou; Chih-Hao Lee; Ming-Zhe Lin

Appl. Phys. Lett. 79, 1477–1479 (2001) https://doi.org/10.1063/1.1402155

Abstract

View articletitled, Crystal orientation dependence of optical gain in InGaN/GaN multiple-quantum-well structures

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Simultaneously enhanced thermoelectric power and reduced resistivity of ${Na}_{x} {Co}_{2} O_{4}$ by controlling Na nonstoichiometry

T. Motohashi; E. Naujalis; R. Ueda; K. Isawa; M. Karppinen; H. Yamauchi

Appl. Phys. Lett. 79, 1480–1482 (2001) https://doi.org/10.1063/1.1400777

Abstract

View articletitled, Simultaneously enhanced thermoelectric power and reduced resistivity of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Na</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Co</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math> by controlling Na nonstoichiometry

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Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells

S. P. Łepkowski; H. Teisseyre; T. Suski; P. Perlin; N. Grandjean; J. Massies

Appl. Phys. Lett. 79, 1483–1485 (2001) https://doi.org/10.1063/1.1396631

Abstract

View articletitled, Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells

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Antireflection coating for miniband transport and Fabry–Pérot resonances in GaAs/AlGaAs superlattices

C. Pacher; C. Rauch; G. Strasser; E. Gornik; F. Elsholz; A. Wacker; G. Kießlich; E. Schöll

Appl. Phys. Lett. 79, 1486–1488 (2001) https://doi.org/10.1063/1.1399315

Abstract

View articletitled, Antireflection coating for miniband transport and Fabry–Pérot resonances in GaAs/AlGaAs superlattices

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Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy

Hai Lu; William J. Schaff; Jeonghyun Hwang; Hong Wu; Goutam Koley; Lester F. Eastman

Appl. Phys. Lett. 79, 1489–1491 (2001) https://doi.org/10.1063/1.1402649

Abstract

View articletitled, Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy

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Positron annihilation study of vacancy-like defects related to oxygen precipitates in Czochralski-type Si

R. S. Brusa; W. Deng; G. P. Karwasz; A. Zecca; D. Pliszka

Appl. Phys. Lett. 79, 1492–1494 (2001) https://doi.org/10.1063/1.1401782

Abstract

View articletitled, Positron annihilation study of vacancy-like defects related to oxygen precipitates in Czochralski-type Si

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MAGNETISM AND SUPERCONDUCTIVITY

Effects of annealing time on defect-controlled ferromagnetism in ${Ga}_{1−x} {Mn}_{x} As$

S. J. Potashnik; K. C. Ku; S. H. Chun; J. J. Berry; N. Samarth; P. Schiffer

Appl. Phys. Lett. 79, 1495–1497 (2001) https://doi.org/10.1063/1.1398619

Abstract

View articletitled, Effects of annealing time on defect-controlled ferromagnetism in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Mn</mi><mrow><mi>x</mi></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math>

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Hall detection of magnetic resonance

Giovanni Boero; Pierre-André Besse; Radivoje Popovic

Appl. Phys. Lett. 79, 1498–1500 (2001) https://doi.org/10.1063/1.1399306

Abstract

View articletitled, Hall detection of magnetic resonance

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Quantum limit of magnetic recording density

G. A. Held; G. Grinstein

Appl. Phys. Lett. 79, 1501–1503 (2001) https://doi.org/10.1063/1.1396317

Abstract

View articletitled, Quantum limit of magnetic recording density

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Magnetization reversal in sub-100 nm pseudo-spin-valve element arrays

F. J. Castaño; Y. Hao; M. Hwang; C. A. Ross; B. Vögeli; Henry I. Smith; S. Haratani

Appl. Phys. Lett. 79, 1504–1506 (2001) https://doi.org/10.1063/1.1399302

Abstract

View articletitled, Magnetization reversal in sub-100 nm pseudo-spin-valve element arrays

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Magnetic phase competing in MnAu systems

Jian-Tao Wang; Ding-Sheng Wang; Yoshiyuki Kawazoe

Appl. Phys. Lett. 79, 1507–1509 (2001) https://doi.org/10.1063/1.1401787

Abstract

View articletitled, Magnetic phase competing in MnAu systems

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DIELECTRICS AND FERROELECTRICITY

Single-crystal, mesoscopic films of lead zinc niobate-lead titanate: Formation and micro-Raman analysis

Jonathan E. Spanier; Miguel Levy; Irving P. Herman; Richard M. Osgood, Jr.; Amar S. Bhalla

Appl. Phys. Lett. 79, 1510–1512 (2001) https://doi.org/10.1063/1.1397761

Abstract

View articletitled, Single-crystal, mesoscopic films of lead zinc niobate-lead titanate: Formation and micro-Raman analysis

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Electrical properties of ${SrTiO}_{3}$ thin films on Si deposited by magnetron sputtering at low temperature

Zhongchun Wang; Veronika Kugler; Ulf Helmersson; N. Konofaos; E. K. Evangelou; Setsuo Nakao; Ping Jin

Appl. Phys. Lett. 79, 1513–1515 (2001) https://doi.org/10.1063/1.1398321

Abstract

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Electrical properties of ${Bi}_{3.25} {La}_{0.75} {Ti}_{3} O_{12}$ thin films on Si for a metal–ferroelectric–insulator–semiconductor structure

Taekjib Choi; Young Sung Kim; Cheol Woong Yang; Jaichan Lee

Appl. Phys. Lett. 79, 1516–1518 (2001) https://doi.org/10.1063/1.1400764

Abstract

View articletitled, Electrical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Bi</mi><mrow><mtext>3.25</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mtext>0.75</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mn>3</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>12</mn></mrow></msub></math> thin films on Si for a metal–ferroelectric–insulator–semiconductor structure

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Improvement in ferroelectric properties of ${SrBi}_{2} {Ta}_{2} O_{9}$ thin films with ${Bi}_{2} O_{3}$ buffer layers by liquid-delivery metalorganic chemical-vapor deposition

Woong-Chul Shin; Soon-Gil Yoon

Appl. Phys. Lett. 79, 1519–1521 (2001) https://doi.org/10.1063/1.1400077

Abstract

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Reduction of thermal damage in ultrathin gate oxides after intrinsic dielectric breakdown

S. Lombardo; A. La Magna; I. Crupi; C. Gerardi; F. Crupi

Appl. Phys. Lett. 79, 1522–1524 (2001) https://doi.org/10.1063/1.1400083

Abstract

View articletitled, Reduction of thermal damage in ultrathin gate oxides after intrinsic dielectric breakdown

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NANOSCALE SCIENCE AND DESIGN

All-additive fabrication of inorganic logic elements by liquid embossing

Colin A. Bulthaup; Eric J. Wilhelm; Brian N. Hubert; Brent A. Ridley; Joseph M. Jacobson

Appl. Phys. Lett. 79, 1525–1527 (2001) https://doi.org/10.1063/1.1383269

Abstract

View articletitled, All-additive fabrication of inorganic logic elements by liquid embossing

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Optical recording media using laser-induced size reduction of Au nanoparticles

M. Sugiyama; S. Inasawa; S. Koda; T. Hirose; T. Yonekawa; T. Omatsu; A. Takami

Appl. Phys. Lett. 79, 1528–1530 (2001) https://doi.org/10.1063/1.1399309

Abstract

View articletitled, Optical recording media using laser-induced size reduction of Au nanoparticles

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Comparison study of semi-crystalline and highly crystalline multiwalled carbon nanotubes

M. Endo; Y. A. Kim; Y. Fukai; T. Hayashi; M. Terrones; H. Terrones; M. S. Dresselhaus

Appl. Phys. Lett. 79, 1531–1533 (2001) https://doi.org/10.1063/1.1400774

Abstract

View articletitled, Comparison study of semi-crystalline and highly crystalline multiwalled carbon nanotubes

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Uniform patterned growth of carbon nanotubes without surface carbon

K. B. K. Teo; M. Chhowalla; G. A. J. Amaratunga; W. I. Milne; D. G. Hasko; G. Pirio; P. Legagneux; F. Wyczisk; D. Pribat

Appl. Phys. Lett. 79, 1534–1536 (2001) https://doi.org/10.1063/1.1400085

Abstract

View articletitled, Uniform patterned growth of carbon nanotubes without surface carbon

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Charging effect in InAs self-assembled quantum dots

T. H. Wang; H. W. Li; J. M. Zhou

Appl. Phys. Lett. 79, 1537–1539 (2001) https://doi.org/10.1063/1.1399307

Abstract

View articletitled, Charging effect in InAs self-assembled quantum dots

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Nanosprings

D. N. McIlroy; D. Zhang; Y. Kranov; M. Grant Norton

Appl. Phys. Lett. 79, 1540–1542 (2001) https://doi.org/10.1063/1.1400079

Abstract

View articletitled, Nanosprings

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Different contrast mechanisms induced by topography artifacts in near-field optical microscopy

P. G. Gucciardi; M. Colocci

Appl. Phys. Lett. 79, 1543–1545 (2001) https://doi.org/10.1063/1.1402154

Abstract

View articletitled, Different contrast mechanisms induced by topography artifacts in near-field optical microscopy

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Bulk synthesis of silicon nanowires using a low-temperature vapor–liquid–solid method

M. K. Sunkara; S. Sharma; R. Miranda; G. Lian; E. C. Dickey

Appl. Phys. Lett. 79, 1546–1548 (2001) https://doi.org/10.1063/1.1401089

Abstract

View articletitled, Bulk synthesis of silicon nanowires using a low-temperature vapor–liquid–solid method

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Scanning tunneling nanolithography of amorphous ${GeSb}_{2} {Te}_{4}$ films

Kentaro Sugawara; Tamihiro Gotoh; Keiji Tanaka

Appl. Phys. Lett. 79, 1549–1551 (2001) https://doi.org/10.1063/1.1400775

Abstract

View articletitled, Scanning tunneling nanolithography of amorphous <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">GeSb</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Te</mi><mrow><mn>4</mn></mrow></msub></math> films

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Hydrogen storage in carbon nitride nanobells

X. D. Bai; Dingyong Zhong; G. Y. Zhang; X. C. Ma; Shuang Liu; E. G. Wang; Yan Chen; David T. Shaw

Appl. Phys. Lett. 79, 1552–1554 (2001) https://doi.org/10.1063/1.1402958

Abstract

View articletitled, Hydrogen storage in carbon nitride nanobells

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DEVICE PHYSICS

Vertical and lateral GaN rectifiers on free-standing GaN substrates

A. P. Zhang; J. W. Johnson; B. Luo; F. Ren; S. J. Pearton; S. S. Park; Y. J. Park; J.-I. Chyi

Appl. Phys. Lett. 79, 1555–1557 (2001) https://doi.org/10.1063/1.1400771

Abstract

View articletitled, Vertical and lateral GaN rectifiers on free-standing GaN substrates

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Proposal for a spin-polarized solar battery

Igor Žutić; Jaroslav Fabian; S. Das Sarma

Appl. Phys. Lett. 79, 1558–1560 (2001) https://doi.org/10.1063/1.1399002

Abstract

View articletitled, Proposal for a spin-polarized solar battery

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Vibrational and photoemission study of the interface between phenyl diamine and indium tin oxide

P. He; S. D. Wang; W. K. Wong; C. S. Lee; S. T. Lee

Appl. Phys. Lett. 79, 1561–1563 (2001) https://doi.org/10.1063/1.1399314

Abstract

View articletitled, Vibrational and photoemission study of the interface between phenyl diamine and indium tin oxide

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Miniband transport in vertical superlattice field-effect transistors

R. A. Deutschmann; W. Wegscheider; M. Rother; M. Bichler; G. Abstreiter

Appl. Phys. Lett. 79, 1564–1566 (2001) https://doi.org/10.1063/1.1390320

Abstract

View articletitled, Miniband transport in vertical superlattice field-effect transistors

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Minority-carrier diffusion length in a GaN-based light-emitting diode

J. C. Gonzalez; K. L. Bunker; P. E. Russell

Appl. Phys. Lett. 79, 1567–1569 (2001) https://doi.org/10.1063/1.1400075

Abstract

View articletitled, Minority-carrier diffusion length in a GaN-based light-emitting diode

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Rectified photocurrent of the protein-based bio-photodiode

Jeong-Woo Choi; Yun-Suk Nam; Won-Hong Lee; Dongho Kim; Masamichi Fujihira

Appl. Phys. Lett. 79, 1570–1572 (2001) https://doi.org/10.1063/1.1399308

Abstract

View articletitled, Rectified photocurrent of the protein-based bio-photodiode

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INTERDISCIPLINARY AND GENERAL PHYSICS

High-energy-resolution scintillator: ${Ce}^{3+}$ activated ${LaBr}_{3}$

E. V. D. van Loef; P. Dorenbos; C. W. E. van Eijk; K. Krämer; H. U. Güdel

Appl. Phys. Lett. 79, 1573–1575 (2001) https://doi.org/10.1063/1.1385342

Abstract

View articletitled, High-energy-resolution scintillator: <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Ce</mi><mrow><mtext>3+</mtext></mrow></msup></math> activated <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LaBr</mi><mrow><mn>3</mn></mrow></msub></math>

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Generation of short millimeter-wave radio pulses using solitons in ferrite-based active rings

B. A. Kalinikos; A. N. Slavin

Appl. Phys. Lett. 79, 1576–1578 (2001) https://doi.org/10.1063/1.1400767

Abstract

View articletitled, Generation of short millimeter-wave radio pulses using solitons in ferrite-based active rings

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

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