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Issues
2 July 2001
ISSN 0003-6951
EISSN 1077-3118
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS
Microcavities in polymeric photonic crystals
Hong-Bo Sun; Vygantas Mizeikis; Ying Xu; Saulius Juodkazis; Jia-Yu Ye; Shigeki Matsuo; Hiroaki Misawa
Appl. Phys. Lett. 79, 1–3 (2001)
https://doi.org/10.1063/1.1381035
Compact holographic memory system using a one-beam geometry in a photorefractive crystal
Appl. Phys. Lett. 79, 7–8 (2001)
https://doi.org/10.1063/1.1383061
Variable-wavelength switchable Bragg gratings formed in polymer-dispersed liquid crystals
Appl. Phys. Lett. 79, 9–11 (2001)
https://doi.org/10.1063/1.1383566
Fabrication and optical studies of AlGaN/GaN quantum-well waveguides
Appl. Phys. Lett. 79, 12–14 (2001)
https://doi.org/10.1063/1.1381037
Dark pulse formation in a quantum-dot laser
J. Zimmermann; S. T. Cundiff; G. von Plessen; J. Feldmann; M. Arzberger; G. Böhm; M.-C. Amann; G. Abstreiter
Appl. Phys. Lett. 79, 18–20 (2001)
https://doi.org/10.1063/1.1379977
PLASMAS AND ELECTRICAL DISCHARGES
Generation of fluxes of highly charged heavy ions from a picosecond laser-produced plasma
Appl. Phys. Lett. 79, 21–23 (2001)
https://doi.org/10.1063/1.1381570
Enhanced K-shell x-ray line emissions from aluminum plasma created by a pair of femtosecond laser pulses
Appl. Phys. Lett. 79, 24–26 (2001)
https://doi.org/10.1063/1.1383571
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
Liquid-crystal photoalignment using low-molecular-weight photo-cross-linkable composites
Appl. Phys. Lett. 79, 30–32 (2001)
https://doi.org/10.1063/1.1381567
Absorption of gas-phase atomic hydrogen by Si(100): Effect of surface atomic structures
Appl. Phys. Lett. 79, 36–38 (2001)
https://doi.org/10.1063/1.1379989
Magneto-optical study of electron occupation and hole wave functions in stacked self-assembled InP quantum dots
Appl. Phys. Lett. 79, 45–47 (2001)
https://doi.org/10.1063/1.1383807
Role of oxygen at the grain boundary of metal oxide varistors: A potential barrier formation mechanism
Appl. Phys. Lett. 79, 48–50 (2001)
https://doi.org/10.1063/1.1378051
Surface plasmon propagation in microscale metal stripes
B. Lamprecht; J. R. Krenn; G. Schider; H. Ditlbacher; M. Salerno; N. Felidj; A. Leitner; F. R. Aussenegg; J. C. Weeber
Appl. Phys. Lett. 79, 51–53 (2001)
https://doi.org/10.1063/1.1380236
Photoluminescence and photoreflectance of GaInNAs single quantum wells
Appl. Phys. Lett. 79, 54–56 (2001)
https://doi.org/10.1063/1.1374221
Microstructural studies of top and bottom magnetic tunnel junctions
Appl. Phys. Lett. 79, 57–59 (2001)
https://doi.org/10.1063/1.1381420
Thermal evidence of stress-induced structural disorder of a glassy alloy in the non-Newtonian region
Appl. Phys. Lett. 79, 60–62 (2001)
https://doi.org/10.1063/1.1381032
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
Effective mass of two-dimensional electron gas in an heterojunction
Appl. Phys. Lett. 79, 66–68 (2001)
https://doi.org/10.1063/1.1380245
Carrier relaxation dynamics for As defects in GaN
Bernard Gil; Aurélien Morel; Thierry Taliercio; Pierre Lefebvre; C. T. Foxon; I. Harrison; A. J. Winser; S. V. Novikov
Appl. Phys. Lett. 79, 69–71 (2001)
https://doi.org/10.1063/1.1380400
Time constant for relaxation of excitons into continuum states in GaAs quantum wells
Appl. Phys. Lett. 79, 72–74 (2001)
https://doi.org/10.1063/1.1382625
Anisotropic diffusion and drift of photogenerated carriers near coreless dislocations in InGaN quantum well
Appl. Phys. Lett. 79, 75–77 (2001)
https://doi.org/10.1063/1.1381422
Case study of an InAs quantum dot memory: Optical storing and deletion of charge
Appl. Phys. Lett. 79, 78–80 (2001)
https://doi.org/10.1063/1.1382628
Anomalously high thermoelectric figure of merit in nanowires by carrier pocket alignment
Appl. Phys. Lett. 79, 81–83 (2001)
https://doi.org/10.1063/1.1379365
MAGNETISM AND SUPERCONDUCTIVITY
Experimental study of decomposition
Appl. Phys. Lett. 79, 87–89 (2001)
https://doi.org/10.1063/1.1383804
Percolation model of the temperature dependence of resistance in doped manganese perovskites
Appl. Phys. Lett. 79, 90–92 (2001)
https://doi.org/10.1063/1.1383572
Influence of substrate roughness on spin reorientation transition of ultrathin Co films on Pd(111)
Appl. Phys. Lett. 79, 93–95 (2001)
https://doi.org/10.1063/1.1383564
Large magnetoresistance in near room temperature
Appl. Phys. Lett. 79, 96–98 (2001)
https://doi.org/10.1063/1.1383271
Superconductivity in ultrathin artificial cuprate structures
G. Balestrino; S. Lavanga; P. G. Medaglia; P. Orgiani; A. Paoletti; G. Pasquini; A. Tebano; A. Tucciarone
Appl. Phys. Lett. 79, 99–101 (2001)
https://doi.org/10.1063/1.1383270
DIELECTRICS AND FERROELECTRICITY
Structure and stability of layers on Si(001)
Appl. Phys. Lett. 79, 102–104 (2001)
https://doi.org/10.1063/1.1383268
Photoelectron spectroscopy study of the electronic structures of -(8-hydroxyquinoline) aluminum interfaces
Appl. Phys. Lett. 79, 105–107 (2001)
https://doi.org/10.1063/1.1383798
Injection currents and effect of negative capacitance in porous
Appl. Phys. Lett. 79, 108–110 (2001)
https://doi.org/10.1063/1.1380241
Large reduction of leakage current by graded-layer La doping in thin films
Appl. Phys. Lett. 79, 111–113 (2001)
https://doi.org/10.1063/1.1371791
NANOSCALE SCIENCE AND DESIGN
Optical characterization of two-dimensional photonic crystal cavities with indium arsenide quantum dot emitters
Appl. Phys. Lett. 79, 114–116 (2001)
https://doi.org/10.1063/1.1377851
Control of charging in resonant tunneling through InAs nanocrystal quantum dots
Appl. Phys. Lett. 79, 117–119 (2001)
https://doi.org/10.1063/1.1382854
Nanocrystals acting as Coulomb islands operating at room temperature created using a focused ion-beam process
Appl. Phys. Lett. 79, 120–122 (2001)
https://doi.org/10.1063/1.1378052
DEVICE PHYSICS
Josephson junctions and superconducting quantum interference devices made by local oxidation of niobium ultrathin films
Appl. Phys. Lett. 79, 123–125 (2001)
https://doi.org/10.1063/1.1382626
Very-high-efficiency double-heterostructure copper phthalocyanine/ photovoltaic cells
Appl. Phys. Lett. 79, 126–128 (2001)
https://doi.org/10.1063/1.1384001
Cascaded resonant tunneling diode quantizer for analog-to-digital flash conversion
Appl. Phys. Lett. 79, 129–131 (2001)
https://doi.org/10.1063/1.1377622
Direct atomic scale characterization of interfaces and doping layers in field-effect transistors
Appl. Phys. Lett. 79, 132–134 (2001)
https://doi.org/10.1063/1.1380401
Detailed analysis of forces influencing lateral resolution for -control and tapping mode
Appl. Phys. Lett. 79, 135–137 (2001)
https://doi.org/10.1063/1.1381029
INTERDISCIPLINARY AND GENERAL PHYSICS
Vacuum electron emission with low turn-on electric field from hydrogenated amorphous carbon thin films
Appl. Phys. Lett. 79, 141–143 (2001)
https://doi.org/10.1063/1.1383563
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Superconducting flip-chip devices using indium microspheres on Au-passivated Nb or NbN as under-bump metallization layer
Achintya Paradkar, Paul Nicaise, et al.
Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures
Tomoya Okuda, Shunsuke Ota, et al.