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Volume 78, Issue 6

5 February 2001

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
PLASMAS AND ELECTRICAL DISCHARGES
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
NANOSCALE SCIENCE AND DESIGN
DEVICE PHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS

LASERS, OPTICS, AND OPTOELECTRONICS

Near-field images of the ${AgO}_{x}$ -type super-resolution near-field structure

Wei-Chih Liu; Cheng-Yen Wen; Kuei-Hsien Chen; Wei Chih Lin; Din Ping Tsai

Appl. Phys. Lett. 78, 685–687 (2001) https://doi.org/10.1063/1.1345832

View articletitled, Near-field images of the <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">AgO</mi><mrow><mi>x</mi></mrow></msub></math></span>-type super-resolution near-field structure

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Photorefractive chiral smectic A phases

R. Termine; B. C. De Simone; A. Golemme

Appl. Phys. Lett. 78, 688–690 (2001) https://doi.org/10.1063/1.1345824

View articletitled, Photorefractive chiral smectic <em>A</em> phases

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Strong luminescence from Tamm states in modulation-doped superlattices

A. B. Henriques

Appl. Phys. Lett. 78, 691–693 (2001) https://doi.org/10.1063/1.1346627

View articletitled, Strong luminescence from Tamm states in modulation-doped superlattices

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Gratings in indium oxide film overlayers on ion-exchanged waveguides by excimer laser micromachining

S. Pissadakis; L. Reekie; M. N. Zervas; J. S. Wilkinson; G. Kiriakidis

Appl. Phys. Lett. 78, 694–696 (2001) https://doi.org/10.1063/1.1345836

View articletitled, Gratings in indium oxide film overlayers on ion-exchanged waveguides by excimer laser micromachining

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Influence of disorder and a parallel magnetic field on a quantum cascade laser

V. M. Apalkov; Tapash Chakraborty

Appl. Phys. Lett. 78, 697–699 (2001) https://doi.org/10.1063/1.1343495

View articletitled, Influence of disorder and a parallel magnetic field on a quantum cascade laser

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Efficient molecular photorefractive materials based on methine dyes

Liming Wang; Man-Kit Ng; Luping Yu

Appl. Phys. Lett. 78, 700–702 (2001) https://doi.org/10.1063/1.1347025

View articletitled, Efficient molecular photorefractive materials based on methine dyes

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Optically induced pulse delay in a solid-state Raman amplifier

Kijoon Lee; Nabil M. Lawandy

Appl. Phys. Lett. 78, 703–705 (2001) https://doi.org/10.1063/1.1347009

View articletitled, Optically induced pulse delay in a solid-state Raman amplifier

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PLASMAS AND ELECTRICAL DISCHARGES

Extraction of ions from the matrix sheath in ablation-plasma ion implantation

Bo Qi; Y. Y. Lau; R. M. Gilgenbach

Appl. Phys. Lett. 78, 706–708 (2001) https://doi.org/10.1063/1.1343842

View articletitled, Extraction of ions from the matrix sheath in ablation-plasma ion implantation

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Excitation of a microdischarge with a reverse-biased pn junction

C. J. Wagner; S.-J. Park; J. G. Eden

Appl. Phys. Lett. 78, 709–711 (2001) https://doi.org/10.1063/1.1345838

View articletitled, Excitation of a microdischarge with a reverse-biased <em>pn</em> junction

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Molecular-beam epitaxial growth and surface characterization of GaAs(311)B

Z. M. Wang; L. Däweritz; K. H. Ploog

Appl. Phys. Lett. 78, 712–714 (2001) https://doi.org/10.1063/1.1337632

View articletitled, Molecular-beam epitaxial growth and surface characterization of GaAs(311)B

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Influence of crystallite size distribution on the micro-Raman analysis of porous Si

Md. N. Islam; Satyendra Kumar

Appl. Phys. Lett. 78, 715–717 (2001) https://doi.org/10.1063/1.1343494

View articletitled, Influence of crystallite size distribution on the micro-Raman analysis of porous Si

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Anomalously increased effective thermal conductivities of ethylene glycol-based nanofluids containing copper nanoparticles

In Special Collection: APL Classic Papers

J. A. Eastman; S. U. S. Choi; S. Li; W. Yu; L. J. Thompson

Appl. Phys. Lett. 78, 718–720 (2001) https://doi.org/10.1063/1.1341218

View articletitled, Anomalously increased effective thermal conductivities of ethylene glycol-based nanofluids containing copper nanoparticles

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Fabrication of CaS:Pb blue phosphor by incorporating dimeric ${Pb}^{2+}$ luminescent centers

Sun Jin Yun; Yong Shin Kim; Sang-Hee Ko Park

Appl. Phys. Lett. 78, 721–723 (2001) https://doi.org/10.1063/1.1343478

View articletitled, Fabrication of CaS:Pb blue phosphor by incorporating dimeric <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Pb</mi><mrow><mi mathvariant="normal">2+</mi></mrow></msup></math></span> luminescent centers

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Raman scattering studies on single-crystalline bulk AlN under high pressures

M. Kuball; J. M. Hayes; A. D. Prins; N. W. A. van Uden; D. J. Dunstan; Ying Shi; J. H. Edgar

Appl. Phys. Lett. 78, 724–726 (2001) https://doi.org/10.1063/1.1344567

View articletitled, Raman scattering studies on single-crystalline bulk AlN under high pressures

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Maskless epitaxial lateral overgrowth of GaN layers on structured Si(111) substrates

A. Strittmatter; S. Rodt; L. Reißmann; D. Bimberg; H. Schröder; E. Obermeier; T. Riemann; J. Christen; A. Krost

Appl. Phys. Lett. 78, 727–729 (2001) https://doi.org/10.1063/1.1347013

View articletitled, Maskless epitaxial lateral overgrowth of GaN layers on structured Si(111) substrates

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Structural modification of single-axis-oriented yttria-stabilized-zirconia films under zirconium ion bombardment

A. A. Voevodin; J. G. Jones; J. S. Zabinski

Appl. Phys. Lett. 78, 730–732 (2001) https://doi.org/10.1063/1.1345823

View articletitled, Structural modification of single-axis-oriented yttria-stabilized-zirconia films under zirconium ion bombardment

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Hanle effect measurements of spin lifetimes in InAs self-assembled quantum dots

R. J. Epstein; D. T. Fuchs; W. V. Schoenfeld; P. M. Petroff; D. D. Awschalom

Appl. Phys. Lett. 78, 733–735 (2001) https://doi.org/10.1063/1.1344565

View articletitled, Hanle effect measurements of spin lifetimes in InAs self-assembled quantum dots

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Fast through-bond diffusion of nitrogen in silicon

Peter A. Schultz; Jeffrey S. Nelson

Appl. Phys. Lett. 78, 736–738 (2001) https://doi.org/10.1063/1.1345828

View articletitled, Fast through-bond diffusion of nitrogen in silicon

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Defect-induced tetragonalization of the orthorhombic ${TiSi}_{2}$ C49 phase: X-ray diffraction and first principles calculations

F. La Via; M. G. Grimaldi; D. B. Migas; Leo Miglio

Appl. Phys. Lett. 78, 739–741 (2001) https://doi.org/10.1063/1.1345829

View articletitled, Defect-induced tetragonalization of the orthorhombic <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TiSi</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math></span> C49 phase: X-ray diffraction and first principles calculations

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Sharp band edge photoluminescence of high-purity ${CuInS}_{2}$ single crystals

Kenji Yoshino; Tetsuo Ikari; Sho Shirakata; Hideto Miyake; Kazumasa Hiramatsu

Appl. Phys. Lett. 78, 742–744 (2001) https://doi.org/10.1063/1.1345802

View articletitled, Sharp band edge photoluminescence of high-purity <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CuInS</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math></span> single crystals

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Carrier-type reversal in Pb–Ge–Se glasses: Photopyroelectric measurements of thermal conductivity and heat capacity

J. Philip; R. Rajesh; C. Preethy Menon

Appl. Phys. Lett. 78, 745–747 (2001) https://doi.org/10.1063/1.1345839

View articletitled, Carrier-type reversal in Pb–Ge–Se glasses: Photopyroelectric measurements of thermal conductivity and heat capacity

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Structural changes during annealing of GaInAsN

Sarah Kurtz; J. Webb; L. Gedvilas; D. Friedman; J. Geisz; J. Olson; R. King; D. Joslin; N. Karam

Appl. Phys. Lett. 78, 748–750 (2001) https://doi.org/10.1063/1.1345819

View articletitled, Structural changes during annealing of GaInAsN

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Improved performance of amorphous silicon thin film transistors by cyanide treatment

Hemantkumar N. Aiyer; Daikichi Nishioka; Nobuyuki Matsuki; Hiroyuki Shinno; V. P. S. Perera; Toyohiro Chikyow; Hikaru Kobayashi; Hideomi Koinuma

Appl. Phys. Lett. 78, 751–753 (2001) https://doi.org/10.1063/1.1344230

View articletitled, Improved performance of amorphous silicon thin film transistors by cyanide treatment

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Effect of buffer layer preparation on GaN epilayers grown by gas-source molecular-beam epitaxy

V. Bousquet; J. Heffernan; J. Barnes; S. Hooper

Appl. Phys. Lett. 78, 754–756 (2001) https://doi.org/10.1063/1.1344227

View articletitled, Effect of buffer layer preparation on GaN epilayers grown by gas-source molecular-beam epitaxy

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Properties of carbon-doped GaN

H. Tang; J. B. Webb; J. A. Bardwell; S. Raymond; Joseph Salzman; C. Uzan-Saguy

Appl. Phys. Lett. 78, 757–759 (2001) https://doi.org/10.1063/1.1345816

View articletitled, Properties of carbon-doped GaN

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Significant enhancement of photoconductivity in truly two-component and chemically hybridized CdS-poly(N-vinylcarbazole) nanocomposites

C. L. Yang; J. N. Wang; W. K. Ge; S. H. Wang; J. X. Cheng; X. Y. Li; Y. J. Yan; S. H. Yang

Appl. Phys. Lett. 78, 760–762 (2001) https://doi.org/10.1063/1.1345826

View articletitled, Significant enhancement of photoconductivity in truly two-component and chemically hybridized CdS-poly(N-vinylcarbazole) nanocomposites

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Voltage induced photoluminescence quenching in porous silicon revisited

M. R. Reshotko; I. Balberg

Appl. Phys. Lett. 78, 763–765 (2001) https://doi.org/10.1063/1.1345837

View articletitled, Voltage induced photoluminescence quenching in porous silicon revisited

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Second-harmonic generation from silicon nanocrystals embedded in ${SiO}_{2}$

Y. Jiang; P. T. Wilson; M. C. Downer; C. W. White; S. P. Withrow

Appl. Phys. Lett. 78, 766–768 (2001) https://doi.org/10.1063/1.1345825

View articletitled, Second-harmonic generation from silicon nanocrystals embedded in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math></span>

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Highly doped thin-channel GaN-metal–semiconductor field-effect transistors

R. Gaska; M. S. Shur; X. Hu; J. W. Yang; A. Tarakji; G. Simin; A. Khan; J. Deng; T. Werner; S. Rumyantsev; N. Pala

Appl. Phys. Lett. 78, 769–771 (2001) https://doi.org/10.1063/1.1344577

View articletitled, Highly doped thin-channel GaN-metal–semiconductor field-effect transistors

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Dislocation reduction in GaN grown by hydride vapor phase epitaxy via growth interruption modulation

Wei Zhang; Stephan Roesel; Helder R. Alves; Dirk Meister; Wilhelm Kriegseis; Detlev M. Hofmann; Bruno K. Meyer; Till Riemann; Peter Veit; Juergen Blaesing; Alois Krost; Juergen Christen

Appl. Phys. Lett. 78, 772–774 (2001) https://doi.org/10.1063/1.1344224

View articletitled, Dislocation reduction in GaN grown by hydride vapor phase epitaxy via growth interruption modulation

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T-shaped ballistic spin filter

A. A. Kiselev; K. W. Kim

Appl. Phys. Lett. 78, 775–777 (2001) https://doi.org/10.1063/1.1347023

View articletitled, T-shaped ballistic spin filter

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MAGNETISM AND SUPERCONDUCTIVITY

Validity of the Stoner–Wohlfarth model in hysteretic giant magnetoimpedance of annealed amorphous materials

Cheol Gi Kim; Seok Soo Yoon; Kil Jae Jang; Chong-Oh Kim

Appl. Phys. Lett. 78, 778–780 (2001) https://doi.org/10.1063/1.1345799

View articletitled, Validity of the Stoner–Wohlfarth model in hysteretic giant magnetoimpedance of annealed amorphous materials

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Cationic ordering control of magnetization in ${Sr}_{2} {FeMoO}_{6}$ double perovskite

Ll. Balcells; J. Navarro; M. Bibes; A. Roig; B. Martı́nez; J. Fontcuberta

Appl. Phys. Lett. 78, 781–783 (2001) https://doi.org/10.1063/1.1346624

View articletitled, Cationic ordering control of magnetization in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">FeMoO</mi><mrow><mi mathvariant="normal">6</mi></mrow></msub></math></span> double perovskite

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Magnetic block array for patterned magnetic media

Kazuyuki Koike; Hideo Matsuyama; Yoshiyuki Hirayama; Kiwamu Tanahashi; Takashi Kanemura; Osamu Kitakami; Yutaka Shimada

Appl. Phys. Lett. 78, 784–786 (2001) https://doi.org/10.1063/1.1345804

View articletitled, Magnetic block array for patterned magnetic media

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Efficient modified “walk on spheres” algorithm for the linearized Poisson–Bolzmann equation

Chi-Ok Hwang; Michael Mascagni

Appl. Phys. Lett. 78, 787–789 (2001) https://doi.org/10.1063/1.1345817

View articletitled, Efficient modified “walk on spheres” algorithm for the linearized Poisson–Bolzmann equation

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All Ya–Ba–Cu–O c-axis trilayer interface-engineered Josephson junctions

B. H. Moeckly

Appl. Phys. Lett. 78, 790–792 (2001) https://doi.org/10.1063/1.1345821

View articletitled, All Ya–Ba–Cu–O <em>c</em>-axis trilayer interface-engineered Josephson junctions

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DIELECTRICS AND FERROELECTRICITY

Infrared optical properties of ${LaNiO}_{3} –platinized$ silicon and ${PbZr}_{χ} {Ti}_{1−χ} O_{3} {–LaNiO}_{3} –platinized$ silicon heterostructures

J. Yu; Z. M. Huang; X. J. Meng; J. L. Sun; J. H. Chu; D. Y. Tang

Appl. Phys. Lett. 78, 793–795 (2001) https://doi.org/10.1063/1.1347403

View articletitled, Infrared optical properties of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LaNiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><mi mathvariant="normal" xmlns="">–platinized</mi></math></span> silicon and <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">PbZr</mi><mrow><mi>χ</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mtext>1−χ</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">–LaNiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><mi mathvariant="normal" xmlns="">–platinized</mi></math></span> silicon heterostructures

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Local probing of the polarization state in thin ${Pb(ZrTi)O}_{3}$ films during polarization reversal

E. D. Mishina; N. E. Sherstyuk; E. Ph. Pevtsov; K. A. Vorotilov; A. S. Sigov; M. P. Moret; S. A. Rössinger; P. K. Larsen; Th. Rasing

Appl. Phys. Lett. 78, 796–798 (2001) https://doi.org/10.1063/1.1329332

View articletitled, Local probing of the polarization state in thin <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pb(ZrTi)O</mi><mrow><mn>3</mn></mrow></msub></math></span> films during polarization reversal

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Domain structures and planar defects in ${SrBi}_{2} {Ta}_{2} O_{9}$ single crystals observed by transmission electron microscopy

Xinhua Zhu; Jianmin Zhu; Shunhua Zhou; Qi Li; Zhiguo Liu; Naiben Ming

Appl. Phys. Lett. 78, 799–801 (2001) https://doi.org/10.1063/1.1347383

View articletitled, Domain structures and planar defects in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrBi</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ta</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>9</mn></mrow></msub></math></span> single crystals observed by transmission electron microscopy

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NANOSCALE SCIENCE AND DESIGN

Interparticle coupling effects in nanofabricated substrates for surface-enhanced Raman scattering

L. Gunnarsson; E. J. Bjerneld; H. Xu; S. Petronis; B. Kasemo; M. Käll

Appl. Phys. Lett. 78, 802–804 (2001) https://doi.org/10.1063/1.1344225

View articletitled, Interparticle coupling effects in nanofabricated substrates for surface-enhanced Raman scattering

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Quantum dot and hole formation in sputter erosion

B. Kahng; H. Jeong; A.-L. Barabási

Appl. Phys. Lett. 78, 805–807 (2001) https://doi.org/10.1063/1.1343468

View articletitled, Quantum dot and hole formation in sputter erosion

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Fermi electron wave packet interference images on carbon nanotubes at room temperature

A. Hassanien; M. Tokumoto; P. Umek; D. Mihailovic; A. Mrzel

Appl. Phys. Lett. 78, 808–810 (2001) https://doi.org/10.1063/1.1345803

View articletitled, Fermi electron wave packet interference images on carbon nanotubes at room temperature

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Conductance of polymer nanowires fabricated by a combined electrodeposition and mechanical break junction method

H. X. He; C. Z. Li; N. J. Tao

Appl. Phys. Lett. 78, 811–813 (2001) https://doi.org/10.1063/1.1335551

View articletitled, Conductance of polymer nanowires fabricated by a combined electrodeposition and mechanical break junction method

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DEVICE PHYSICS

Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts

Cristian Rivas; Roger Lake; Gerhard Klimeck; William R. Frensley; Massimo V. Fischetti; Phillip E. Thompson; Sean L. Rommel; Paul R. Berger

Appl. Phys. Lett. 78, 814–816 (2001) https://doi.org/10.1063/1.1343500

View articletitled, Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts

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Band-edge luminescence in quaternary AlInGaN light-emitting diodes

M. Shatalov; A. Chitnis; V. Adivarahan; A. Lunev; J. Zhang; J. W. Yang; Q. Fareed; G. Simin; A. Zakheim; M. Asif Khan; R. Gaska; M. S. Shur

Appl. Phys. Lett. 78, 817–819 (2001) https://doi.org/10.1063/1.1343493

View articletitled, Band-edge luminescence in quaternary AlInGaN light-emitting diodes

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Quantitative metrology study of ${Cu/SiO}_{2}$ interconnect structures using fluorescence x-ray microscopy

Guangyong Xu; X. Su; C. B. Stagarescu; D. E. Eastman; B. Lai; Z. Cai; I. C. Noyan; C.-K. Hu

Appl. Phys. Lett. 78, 820–822 (2001) https://doi.org/10.1063/1.1339996

View articletitled, Quantitative metrology study of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cu/SiO</mi><mrow><mn>2</mn></mrow></msub></math></span> interconnect structures using fluorescence x-ray microscopy

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Lateral ${Al}_{x} {Ga}_{1−x} N$ power rectifiers with 9.7 kV reverse breakdown voltage

A. P. Zhang; J. W. Johnson; F. Ren; J. Han; A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; J. M. Redwing; K. P. Lee; S. J. Pearton

Appl. Phys. Lett. 78, 823–825 (2001) https://doi.org/10.1063/1.1346622

View articletitled, Lateral <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">N</mi></math></span> power rectifiers with 9.7 kV reverse breakdown voltage

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Self-repair of ordered pattern of nanometer dimensions based on self-compensation properties of anodic porous alumina

Hideki Masuda; Masato Yotsuya; Mari Asano; Kazuyuki Nishio; Masashi Nakao; Atsushi Yokoo; Toshiaki Tamamura

Appl. Phys. Lett. 78, 826–828 (2001) https://doi.org/10.1063/1.1344575

View articletitled, Self-repair of ordered pattern of nanometer dimensions based on self-compensation properties of anodic porous alumina

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INTERDISCIPLINARY AND GENERAL PHYSICS

Self-assembled Fe nanowires using organometallic chemical vapor deposition and ${CaF}_{2}$ masks on stepped Si(111)

J.-L. Lin; D. Y. Petrovykh; A. Kirakosian; H. Rauscher; F. J. Himpsel; P. A. Dowben

Appl. Phys. Lett. 78, 829–831 (2001) https://doi.org/10.1063/1.1345830

View articletitled, Self-assembled Fe nanowires using organometallic chemical vapor deposition and <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CaF</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math></span> masks on stepped Si(111)

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Bundle structure and sliding of single-walled carbon nanotubes observed by frictional-force microscopy

K. Miura; M. Ishikawa; R. Kitanishi; M. Yoshimura; K. Ueda; Y. Tatsumi; N. Minami

Appl. Phys. Lett. 78, 832–834 (2001) https://doi.org/10.1063/1.1334359

View articletitled, Bundle structure and sliding of single-walled carbon nanotubes observed by frictional-force microscopy

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Enhanced depth resolution in terahertz imaging using phase-shift interferometry

Jon L. Johnson; Timothy D. Dorney; Daniel M. Mittleman

Appl. Phys. Lett. 78, 835–837 (2001) https://doi.org/10.1063/1.1346626

View articletitled, Enhanced depth resolution in terahertz imaging using phase-shift interferometry

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Scaling properties and electromigration resistance of sputtered Ag metallization lines

M. Hauder; J. Gstöttner; W. Hansch; D. Schmitt-Landsiedel

Appl. Phys. Lett. 78, 838–840 (2001) https://doi.org/10.1063/1.1345801

View articletitled, Scaling properties and electromigration resistance of sputtered Ag metallization lines

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2.5% efficient organic plastic solar cells

In Special Collection: APL Classic Papers

Sean E. Shaheen; Christoph J. Brabec; N. Serdar Sariciftci; Franz Padinger; Thomas Fromherz; Jan C. Hummelen

Appl. Phys. Lett. 78, 841–843 (2001) https://doi.org/10.1063/1.1345834

View articletitled, 2.5% efficient organic plastic solar cells

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Holographic scattering as a technique to determine the activation energy for thermal fixing in photorefractive materials

M. A. Ellabban; G. Mandula; M. Fally; R. A. Rupp; L. Kovács

Appl. Phys. Lett. 78, 844–846 (2001) https://doi.org/10.1063/1.1346623

View articletitled, Holographic scattering as a technique to determine the activation energy for thermal fixing in photorefractive materials

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Online ISSN 1077-3118
Print ISSN 0003-6951

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