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Volume 78, Issue 4

22 January 2001

Applied Physics Letters Cover Image for Volume 78, Issue 4

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
PLASMAS AND ELECTRICAL DISCHARGES
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
NANOSCALE SCIENCE AND DESIGN
DEVICE PHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS
ERRATA

LASERS, OPTICS, AND OPTOELECTRONICS

Stimulated emission depletion microscopy with an offset depleting beam

T. A. Klar; M. Dyba; S. W. Hell

Appl. Phys. Lett. 78, 393–395 (2001) https://doi.org/10.1063/1.1338491

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High-temperature operation of distributed feedback quantum-cascade lasers at 5.3 μm

Daniel Hofstetter; Mattias Beck; Thierry Aellen; Jérôme Faist

Appl. Phys. Lett. 78, 396–398 (2001) https://doi.org/10.1063/1.1340865

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Submilliwatt operation of AlGaN-based ultraviolet light-emitting diode using short-period alloy superlattice

T. Nishida; H. Saito; N. Kobayashi

Appl. Phys. Lett. 78, 399–400 (2001) https://doi.org/10.1063/1.1338964

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SiGe/Si THz laser based on transitions between inverted mass light-hole and heavy-hole subbands

L. Friedman; G. Sun; R. A. Soref

Appl. Phys. Lett. 78, 401–403 (2001) https://doi.org/10.1063/1.1341221

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BeCdSe as a ternary alloy for blue-green optoelectronic applications

S. V. Ivanov; O. V. Nekrutkina; S. V. Sorokin; V. A. Kaygorodov; T. V. Shubina; A. A. Toropov; P. S. Kop’ev; G. Reuscher; V. Wagner; J. Geurts; A. Waag; G. Landwehr

Appl. Phys. Lett. 78, 404–406 (2001) https://doi.org/10.1063/1.1342202

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Ultraviolet-emitting ZnO nanowires synthesized by a physical vapor deposition approach

Y. C. Kong; D. P. Yu; B. Zhang; W. Fang; S. Q. Feng

Appl. Phys. Lett. 78, 407–409 (2001) https://doi.org/10.1063/1.1342050

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Very-low-operating-voltage organic light-emitting diodes using a $p -doped$ amorphous hole injection layer

X. Zhou; M. Pfeiffer; J. Blochwitz; A. Werner; A. Nollau; T. Fritz; K. Leo

Appl. Phys. Lett. 78, 410–412 (2001) https://doi.org/10.1063/1.1343849

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Decreasing the emission wavelength of GaAs–AlGaAs quantum cascade lasers by the incorporation of ultrathin InGaAs layers

L. R. Wilson; J. W. Cockburn; M. J. Steer; D. A. Carder; M. S. Skolnick; M. Hopkinson; G. Hill

Appl. Phys. Lett. 78, 413–415 (2001) https://doi.org/10.1063/1.1343841

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High-performance quantum cascade lasers $(λ∼11 μ m)$ operating at high temperature $(T ⩾425 K)$

A. Tahraoui; A. Matlis; S. Slivken; J. Diaz; M. Razeghi

Appl. Phys. Lett. 78, 416–418 (2001) https://doi.org/10.1063/1.1343848

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PLASMAS AND ELECTRICAL DISCHARGES

Silicon microdischarge devices having inverted pyramidal cathodes: Fabrication and performance of arrays

S.-J. Park; J. Chen; C. Liu; J. G. Eden

Appl. Phys. Lett. 78, 419–421 (2001) https://doi.org/10.1063/1.1338971

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Experimental investigation of electron oscillation inside the filter of a vacuum arc plasma source

D. T. K. Kwok; T. Zhang; P. K. Chu; M. M. M. Bilek; A. Vizir; I. G. Brown

Appl. Phys. Lett. 78, 422–424 (2001) https://doi.org/10.1063/1.1342779

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Helix unwinding of doped cholesteric liquid crystals

W. C. Yip; H. S. Kwok

Appl. Phys. Lett. 78, 425–427 (2001) https://doi.org/10.1063/1.1342781

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Raman-spectroscopic evaluation of the long-range order in $Ba (B_{1/3}^{'} B_{2/3}^{″}) O_{3}$ ceramics

Roberto L. Moreira; Franklin M. Matinaga; Anderson Dias

Appl. Phys. Lett. 78, 428–430 (2001) https://doi.org/10.1063/1.1339254

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In situ observation of surface processes in InAs/GaAs(001) heteroepitaxy: The role of As on the growth mode

Akihiro Ohtake; Masashi Ozeki

Appl. Phys. Lett. 78, 431–433 (2001) https://doi.org/10.1063/1.1342216

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Excitonic properties and band alignment in lattice-matched ZnCdSe/ZnMgSe multiple-quantum-well structures

B. Bonanni; E. Pelucchi; S. Rubini; D. Orani; A. Franciosi; A. Garulli; A. Parisini

Appl. Phys. Lett. 78, 434–436 (2001) https://doi.org/10.1063/1.1342043

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Effects of the morphologies and structures of light-emitting layers on the performance of organic electroluminescent devices

D. S. Qin; D. C. Li; Y. Wang; J. D. Zhang; Z. Y. Xie; G. Wang; L. X. Wang; D. H. Yan

Appl. Phys. Lett. 78, 437–439 (2001) https://doi.org/10.1063/1.1342203

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On “radiation-free” states in transient motion of dislocations

Xanthippi Markenscoff

Appl. Phys. Lett. 78, 440–442 (2001) https://doi.org/10.1063/1.1339852

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X-ray scattering from misfit dislocations in heteroepitaxial films: The case of Nb(110) on ${Al}_{2} O_{3}$

R. I. Barabash; W. Donner; H. Dosch

Appl. Phys. Lett. 78, 443–445 (2001) https://doi.org/10.1063/1.1342215

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Neutron transmutation of ¹⁰B isotope-doped diamond

K. Jagannadham; K. Verghese; J. E. Butler

Appl. Phys. Lett. 78, 446–447 (2001) https://doi.org/10.1063/1.1342207

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Comparison of aluminum and sodium doped poly(vinylidene fluoride-trifluoroethylene) copolymers by x-ray photoemission spectroscopy

B. Xu; Jaewu Choi; C. N. Borca; P. A. Dowben; A. V. Sorokin; S. P. Palto; N. N. Petukhova; S. G. Yudin

Appl. Phys. Lett. 78, 448–450 (2001) https://doi.org/10.1063/1.1340858

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Local structure of uncapped and Si-capped Ge/Si(100) self-assembled quantum dots

Alexander V. Kolobov; Hiroyuki Oyanagi; Karl Brunner; Peter Schittenhelm; Gerhard Abstreiter; Kazunobu Tanaka

Appl. Phys. Lett. 78, 451–453 (2001) https://doi.org/10.1063/1.1339841

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Compliant effect of low-temperature Si buffer for SiGe growth

Y. H. Luo; J. Wan; R. L. Forrest; J. L. Liu; G. Jin; M. S. Goorsky; K. L. Wang

Appl. Phys. Lett. 78, 454–456 (2001) https://doi.org/10.1063/1.1337633

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Nanofractography of shocked RDX explosive crystals with atomic force microscopy

J. Sharma; R. W. Armstrong; W. L. Elban; C. S. Coffey; H. W. Sandusky

Appl. Phys. Lett. 78, 457–459 (2001) https://doi.org/10.1063/1.1342046

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Oxidation kinetics in ${SrTiO}_{3}$ homoepitaxy on ${SrTiO}_{3} (001)$

X. D. Zhu; Weidong Si; X. X. Xi; Qidu Jiang

Appl. Phys. Lett. 78, 460–462 (2001) https://doi.org/10.1063/1.1338497

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Chemical ordering in AlGaN alloys grown by molecular beam epitaxy

E. Iliopoulos; K. F. Ludwig, Jr.; T. D. Moustakas; S. N. G. Chu

Appl. Phys. Lett. 78, 463–465 (2001) https://doi.org/10.1063/1.1341222

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Magnetic susceptibility and microstructure of hydrogenated amorphous silicon measured by nuclear magnetic resonance on a single thin film

Jonathan Baugh; Daxing Han; Alfred Kleinhammes; Yue Wu

Appl. Phys. Lett. 78, 466–468 (2001) https://doi.org/10.1063/1.1341217

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Strip inverse-configuration photopyroelectric technique to measure the thermal conductivity of bulk samples

Srirang Manohar; S. Asokan

Appl. Phys. Lett. 78, 469–471 (2001) https://doi.org/10.1063/1.1342782

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Monolithic integration of a quantum-well infrared photodetector array with a read-out circuit

D. Mandelik; M. Schniederman; V. Umansky; I. Bar-Joseph

Appl. Phys. Lett. 78, 472–474 (2001) https://doi.org/10.1063/1.1340862

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Large and abrupt optical band gap variation in In-doped ZnO

Kwang Joo Kim; Young Ran Park

Appl. Phys. Lett. 78, 475–477 (2001) https://doi.org/10.1063/1.1342042

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Comparison of field effect transistor characteristics between space-grown and earth-grown gallium arsenide single crystal substrates

Nuo Fu Chen; Xingru Zhong; Lanying Lin; Mian Zhang; Yunsheng Wang; Xiwei Bai; Jing Zhao

Appl. Phys. Lett. 78, 478–479 (2001) https://doi.org/10.1063/1.1342201

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Direct observation of electrical charges at dislocations in GaAs by cross-sectional scanning tunneling microscopy

Ph. Ebert; C. Domke; K. Urban

Appl. Phys. Lett. 78, 480–482 (2001) https://doi.org/10.1063/1.1341219

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Low turn-on voltage GaAs heterojunction bipolar transistors with a pseudomorphic GaAsSb base

Tohru Oka; Tomoyoshi Mishima; Makoto Kudo

Appl. Phys. Lett. 78, 483–485 (2001) https://doi.org/10.1063/1.1343853

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Enhanced tunnel current through thin oxide due to single-defect scattering

Y. Fu; M. Willander; P. Lundgren; E. Aderstedt

Appl. Phys. Lett. 78, 486–488 (2001) https://doi.org/10.1063/1.1338958

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Microwave transmission through a two-dimensional, isotropic, left-handed metamaterial

R. A. Shelby; D. R. Smith; S. C. Nemat-Nasser; S. Schultz

Appl. Phys. Lett. 78, 489–491 (2001) https://doi.org/10.1063/1.1343489

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Snapback behavior of the postbreakdown $I–V$ characteristics in ultrathin ${SiO}_{2}$ films

T. P. Chen; M. S. Tse; X. Zeng

Appl. Phys. Lett. 78, 492–494 (2001) https://doi.org/10.1063/1.1342214

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Infrared multispectral detection using ${Si/Si}_{x} {Ge}_{1−x}$ quantum well infrared photodetectors

D. Krapf; B. Adoram; J. Shappir; A. Sa’ar; S. G. Thomas; J. L. Liu; K. L. Wang

Appl. Phys. Lett. 78, 495–497 (2001) https://doi.org/10.1063/1.1343498

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MAGNETISM AND SUPERCONDUCTIVITY

Layered chiral metallic microstructures with inductive coupling

Yuri Svirko; Nikolay Zheludev; Michail Osipov

Appl. Phys. Lett. 78, 498–500 (2001) https://doi.org/10.1063/1.1342210

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Interfacial capacitance effects in magnetic tunneling junctions

G. Landry; Y. Dong; J. Du; X. Xiang; John Q. Xiao

Appl. Phys. Lett. 78, 501–503 (2001) https://doi.org/10.1063/1.1336816

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Enhanced initial susceptibility in small amorphous disks

Amikam Aharoni

Appl. Phys. Lett. 78, 504–505 (2001) https://doi.org/10.1063/1.1342052

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Josephson plasma observed in underdoped (110) ${YBa}_{2} {Cu}_{3} O_{7−δ}$ films

X. G. Qiu; H. Koinuma; M. Iwasaki; T. Itoh; A. K. Sarin Kumar; M. Kawasaki; E. Saitoh; Y. Tokura; K. Takehana; G. Kido; Y. Segawa

Appl. Phys. Lett. 78, 506–508 (2001) https://doi.org/10.1063/1.1342208

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Single-crystal magnetotunnel junctions

W. Wulfhekel; M. Klaua; D. Ullmann; F. Zavaliche; J. Kirschner; R. Urban; T. Monchesky; B. Heinrich

Appl. Phys. Lett. 78, 509–511 (2001) https://doi.org/10.1063/1.1342778

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Atomic ordering in the ${LaFe}_{0.5} {Mn}_{0.5} O_{3}$ solid solution film

K. Ueda; Y. Muraoka; H. Tabata; T. Kawai

Appl. Phys. Lett. 78, 512–514 (2001) https://doi.org/10.1063/1.1343844

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Enhanced tunnel magnetoresistance in granular nanobridges

K. Yakushiji; S. Mitani; K. Takanashi; S. Takahashi; S. Maekawa; H. Imamura; H. Fujimori

Appl. Phys. Lett. 78, 515–517 (2001) https://doi.org/10.1063/1.1341231

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Control of magnetization reversal process by light illumination in ferromagnetic semiconductor heterostructure $p -(In, Mn)As/GaSb$

A. Oiwa; T. Słupinski; H. Munekata

Appl. Phys. Lett. 78, 518–520 (2001) https://doi.org/10.1063/1.1343497

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Potential phase control of chromium oxide thin films prepared by laser-initiated organometallic chemical vapor deposition

Ruihua Cheng; C. N. Borca; P. A. Dowben; Shane Stadler; Y. U. Idzerda

Appl. Phys. Lett. 78, 521–523 (2001) https://doi.org/10.1063/1.1343846

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DIELECTRICS AND FERROELECTRICITY

Origin of the “up,” “down” hysteresis offsets observed from polarization-graded ferroelectric materials

Whitney Fellberg; Joseph Mantese; Norman Schubring; Adolph Micheli

Appl. Phys. Lett. 78, 524–526 (2001) https://doi.org/10.1063/1.1342045

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Dielectric nonlinearities in ferroelectric thin-film heterostructures

M. Tyunina; J. Levoska; S. Leppävuori; A. Sternberg

Appl. Phys. Lett. 78, 527–529 (2001) https://doi.org/10.1063/1.1342051

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In-plane polarization states and their instabilities in polydomain epitaxial ferroelectric thin films

V. G. Koukhar; N. A. Pertsev; R. Waser

Appl. Phys. Lett. 78, 530–532 (2001) https://doi.org/10.1063/1.1338960

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Effects of very thin strain layers on dielectric properties of epitaxial ${Ba}_{0.6} {Sr}_{0.4} {TiO}_{3}$ films

B. H. Park; E. J. Peterson; Q. X. Jia; J. Lee; X. Zeng; W. Si; X. X. Xi

Appl. Phys. Lett. 78, 533–535 (2001) https://doi.org/10.1063/1.1340863

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NANOSCALE SCIENCE AND DESIGN

Construction of highly conductive nanowires on a DNA template

Jan Richter; Michael Mertig; Wolfgang Pompe; Ingolf Mönch; Hans K. Schackert

Appl. Phys. Lett. 78, 536–538 (2001) https://doi.org/10.1063/1.1338967

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Ultralow biased field emitter using single-wall carbon nanotube directly grown onto silicon tip by thermal chemical vapor deposition

Kazuhiko Matsumoto; Seizo Kinosita; Yoshitaka Gotoh; Tetsuo Uchiyama; Scott Manalis; Calvin Quate

Appl. Phys. Lett. 78, 539–540 (2001) https://doi.org/10.1063/1.1343470

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DEVICE PHYSICS

Correlation between leakage current density and threading dislocation density in SiGe p-i-n diodes grown on relaxed graded buffer layers

Laura M. Giovane; Hsin-Chiao Luan; Anuradha M. Agarwal; Lionel C. Kimerling

Appl. Phys. Lett. 78, 541–543 (2001) https://doi.org/10.1063/1.1341230

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Application of an ultrathin LiF/Al bilayer in organic surface-emitting diodes

L. S. Hung; C. W. Tang; M. G. Mason; P. Raychaudhuri; J. Madathil

Appl. Phys. Lett. 78, 544–546 (2001) https://doi.org/10.1063/1.1327273

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INTERDISCIPLINARY AND GENERAL PHYSICS

Optically driven micromachine elements

M. E. J. Friese; H. Rubinsztein-Dunlop; J. Gold; P. Hagberg; D. Hanstorp

Appl. Phys. Lett. 78, 547–549 (2001) https://doi.org/10.1063/1.1339995

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Thermally stimulated current method applied on diodes with high concentration of deep trapping levels

I. Pintilie; L. Pintilie; M. Moll; E. Fretwurst; G. Lindstroem

Appl. Phys. Lett. 78, 550–552 (2001) https://doi.org/10.1063/1.1335852

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Acoustic imaging by second harmonic of phase-conjugate wave in inhomogeneous medium

Yu. Pyl’nov; P. Pernod; V. Preobrazhensky

Appl. Phys. Lett. 78, 553–555 (2001) https://doi.org/10.1063/1.1342205

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Performance of cryogenic microbolometers and calorimeters with on-chip coolers

D. V. Anghel; A. Luukanen; J. P. Pekola

Appl. Phys. Lett. 78, 556–558 (2001) https://doi.org/10.1063/1.1339261

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ERRATA

Erratum: “Transport properties of ${GaAs}_{1−x} N_{x}$ thin films grown by metalorganic chemical vapor deposition” [Appl. Phys. Lett. 77, 3794 (2000)]

R. K. Ahrenkiel; S. W. Johnston; B. M. Keyes; D. J. Friedman; S. M. Vernon

Appl. Phys. Lett. 78, 559 (2001) https://doi.org/10.1063/1.1346587

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