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LASERS, OPTICS, AND OPTOELECTRONICS

High-power AlGaInN flip-chip light-emitting diodes

J. J. Wierer; D. A. Steigerwald; M. R. Krames; J. J. O’Shea; M. J. Ludowise; G. Christenson; Y.-C. Shen; C. Lowery; P. S. Martin; S. Subramanya; W. Götz; N. F. Gardner; R. S. Kern; S. A. Stockman

Appl. Phys. Lett. 78, 3379–3381 (2001) https://doi.org/10.1063/1.1374499

Abstract

View articletitled, High-power AlGaInN flip-chip light-emitting diodes

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Potential applications of dark resonance to subpicosecond optical switches in hyper-terahertz repetition rates

Byoung S. Ham

Appl. Phys. Lett. 78, 3382–3384 (2001) https://doi.org/10.1063/1.1374227

Abstract

View articletitled, Potential applications of dark resonance to subpicosecond optical switches in hyper-terahertz repetition rates

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Biexciton emission from ${ZnO/Zn}_{0.74} {Mg}_{0.26} O$ multiquantum wells

H. D. Sun; T. Makino; Y. Segawa; M. Kawasaki; A. Ohtomo; K. Tamura; H. Koinuma

Appl. Phys. Lett. 78, 3385–3387 (2001) https://doi.org/10.1063/1.1375830

Abstract

View articletitled, Biexciton emission from <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">ZnO/Zn</mi><mrow><mi mathvariant="normal">0.74</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Mg</mi><mrow><mi mathvariant="normal">0.26</mi></mrow></msub><mi mathvariant="normal" xmlns="">O</mi></math> multiquantum wells

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Multipole-cancellation mechanism for high-Q cavities in the absence of a complete photonic band gap

Steven G. Johnson; Shanhui Fan; Attila Mekis; J. D. Joannopoulos

Appl. Phys. Lett. 78, 3388–3390 (2001) https://doi.org/10.1063/1.1375838

Abstract

View articletitled, Multipole-cancellation mechanism for high-Q cavities in the absence of a complete photonic band gap

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Temperature dependence of laser threshold in an InGaAsN vertical-cavity surface-emitting laser

H. C. Schneider; A. J. Fischer; W. W. Chow; J. F. Klem

Appl. Phys. Lett. 78, 3391–3393 (2001) https://doi.org/10.1063/1.1374484

Abstract

View articletitled, Temperature dependence of laser threshold in an InGaAsN vertical-cavity surface-emitting laser

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Virtual mesa and spoiler midinfrared angled-grating distributed feedback lasers fabricated by ion bombardment

R. E. Bartolo; W. W. Bewley; C. L. Felix; I. Vurgaftman; J. R. Lindle; J. R. Meyer; D. L. Knies; K. S. Grabowski; G. W. Turner; M. J. Manfra

Appl. Phys. Lett. 78, 3394–3396 (2001) https://doi.org/10.1063/1.1377044

Abstract

View articletitled, Virtual mesa and spoiler midinfrared angled-grating distributed feedback lasers fabricated by ion bombardment

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Ultrafast dynamics of InAs/GaAs quantum-dot microdisk lasers

K. J. Luo; J. Y. Xu; H. Cao; Y. Ma; S. H. Chang; S. T. Ho; G. S. Solomon

Appl. Phys. Lett. 78, 3397–3399 (2001) https://doi.org/10.1063/1.1376437

Abstract

View articletitled, Ultrafast dynamics of InAs/GaAs quantum-dot microdisk lasers

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Two-dimensional photonic crystals: Candidate for wave plates

Lie-Ming Li

Appl. Phys. Lett. 78, 3400–3402 (2001) https://doi.org/10.1063/1.1375839

Abstract

View articletitled, Two-dimensional photonic crystals: Candidate for wave plates

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Ultrasonic monitoring of laser damage in fused silica

Louis P. Martin; Mary A. Norton; Graham Thomas

Appl. Phys. Lett. 78, 3403–3405 (2001) https://doi.org/10.1063/1.1376431

Abstract

View articletitled, Ultrasonic monitoring of laser damage in fused silica

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Microcavity-enhanced surface-emitted second-harmonic generation from 200 fs pulses at 1.5 μm

Todd G. Ulmer; Marc Hanna; Brian R. Washburn; Carl M. Verber; Stephen E. Ralph; Anthony J. SpringThorpe

Appl. Phys. Lett. 78, 3406–3408 (2001) https://doi.org/10.1063/1.1376429

Abstract

View articletitled, Microcavity-enhanced surface-emitted second-harmonic generation from 200 fs pulses at 1.5 μm

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Recovery dynamics in proton-bombarded semiconductor saturable absorber mirrors

Juliet T. Gopinath; Erik R. Thoen; Elisabeth M. Koontz; Matthew E. Grein; Leslie A. Kolodziejski; Erich P. Ippen; Joseph P. Donnelly

Appl. Phys. Lett. 78, 3409–3411 (2001) https://doi.org/10.1063/1.1376663

Abstract

View articletitled, Recovery dynamics in proton-bombarded semiconductor saturable absorber mirrors

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Investigation of indium tin oxide/zinc oxide multilayer ohmic contacts to n-type GaN isotype conjunction

Ching-Ting Lee; Qing-Xuan Yu; Bang-Tai Tang; Hsin-Ying Lee; Fu-Tsai Hwang

Appl. Phys. Lett. 78, 3412–3414 (2001) https://doi.org/10.1063/1.1376430

Abstract

View articletitled, Investigation of indium tin oxide/zinc oxide multilayer ohmic contacts to n-type GaN isotype conjunction

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High-sensitivity absorption measurement in water and glass samples using a mode-mismatched pump-probe thermal lens method

A. Marcano O.; C. Loper; N. Melikechi

Appl. Phys. Lett. 78, 3415–3417 (2001) https://doi.org/10.1063/1.1375835

Abstract

View articletitled, High-sensitivity absorption measurement in water and glass samples using a mode-mismatched pump-probe thermal lens method

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PLASMAS AND ELECTRICAL DISCHARGES

Low-voltage electron emission from “tipless” field emitter arrays

H. Busta; D. Furst; A. T. Rakhimov; V. A. Samorodov; B. V. Seleznev; N. V. Suetin; A. Silzars

Appl. Phys. Lett. 78, 3418–3420 (2001) https://doi.org/10.1063/1.1376153

Abstract

View articletitled, Low-voltage electron emission from “tipless” field emitter arrays

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Suppression of phase separation in ${(AlAs)}_{2 ML} {(InAs)}_{2 ML}$ superlattices using ${Al}_{0.48} {In}_{0.52} As$ monolayer insertions

S. R. Lee; J. L. Reno; D. M. Follstaedt

Appl. Phys. Lett. 78, 3421–3423 (2001) https://doi.org/10.1063/1.1374521

Abstract

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How the nonrandom distribution of nuclei affects the island density in thin-film growth

M. Fanfoni; M. Tomellini; M. Volpe

Appl. Phys. Lett. 78, 3424–3426 (2001) https://doi.org/10.1063/1.1375007

Abstract

View articletitled, How the nonrandom distribution of nuclei affects the island density in thin-film growth

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Evolution of the electron energy distribution and plasma parameters in a pulsed magnetron discharge

J. T. Gudmundsson; J. Alami; U. Helmersson

Appl. Phys. Lett. 78, 3427–3429 (2001) https://doi.org/10.1063/1.1376150

Abstract

View articletitled, Evolution of the electron energy distribution and plasma parameters in a pulsed magnetron discharge

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Identification of ternary boron–carbon–nitrogen hexagonal phases by x-ray absorption spectroscopy

R. Gago; I. Jiménez; J. M. Albella; L. J. Terminello

Appl. Phys. Lett. 78, 3430–3432 (2001) https://doi.org/10.1063/1.1376428

Abstract

View articletitled, Identification of ternary boron–carbon–nitrogen hexagonal phases by x-ray absorption spectroscopy

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Electrochemical tuning of electronic states in single-wall carbon nanotubes studied by in situ absorption spectroscopy and ac resistance

S. Kazaoui; N. Minami; N. Matsuda; H. Kataura; Y. Achiba

Appl. Phys. Lett. 78, 3433–3435 (2001) https://doi.org/10.1063/1.1372208

Abstract

View articletitled, Electrochemical tuning of electronic states in single-wall carbon nanotubes studied by in situ absorption spectroscopy and ac resistance

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Photoluminescence properties of the ${Eu}^{3+}$ activator ion in the ${TiO}_{2}$ host matrix

A. Conde-Gallardo; M. Garcı́a-Rocha; I. Hernández-Calderón; R. Palomino-Merino

Appl. Phys. Lett. 78, 3436–3438 (2001) https://doi.org/10.1063/1.1372338

Abstract

View articletitled, Photoluminescence properties of the <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Eu</mi><mrow><mtext>3+</mtext></mrow></msup></math> activator ion in the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> host matrix

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Nanoanalysis of Co/Cu/NiFe thin films by tomographic atom probe

J. Schleiwies; G. Schmitz; S. Heitmann; A. Hütten

Appl. Phys. Lett. 78, 3439–3441 (2001) https://doi.org/10.1063/1.1374999

Abstract

View articletitled, Nanoanalysis of Co/Cu/NiFe thin films by tomographic atom probe

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Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation

P. Pellegrino; P. Lévêque; J. Wong-Leung; C. Jagadish; B. G. Svensson

Appl. Phys. Lett. 78, 3442–3444 (2001) https://doi.org/10.1063/1.1374960

Abstract

View articletitled, Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation

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Electrical transients in the ion-beam-induced nitridation of silicon

Mladen Petravic; Prakash N. K. Deenapanray

Appl. Phys. Lett. 78, 3445–3447 (2001) https://doi.org/10.1063/1.1376661

Abstract

View articletitled, Electrical transients in the ion-beam-induced nitridation of silicon

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Effects of interface roughness and phonon scattering on intersubband absorption linewidth in a GaAs quantum well

Takeya Unuma; Teruyuki Takahashi; Takeshi Noda; Masahiro Yoshita; Hiroyuki Sakaki; Motoyoshi Baba; Hidefumi Akiyama

Appl. Phys. Lett. 78, 3448–3450 (2001) https://doi.org/10.1063/1.1376154

Abstract

View articletitled, Effects of interface roughness and phonon scattering on intersubband absorption linewidth in a GaAs quantum well

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Electromigration in Cu interconnects with very different grain structures

C. S. Hau-Riege; C. V. Thompson

Appl. Phys. Lett. 78, 3451–3453 (2001) https://doi.org/10.1063/1.1355304

Abstract

View articletitled, Electromigration in Cu interconnects with very different grain structures

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Stochastic modeling of solid nucleation in supercooled liquids

J. P. Leonard; James S. Im

Appl. Phys. Lett. 78, 3454–3456 (2001) https://doi.org/10.1063/1.1355004

Abstract

View articletitled, Stochastic modeling of solid nucleation in supercooled liquids

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Growth of epitaxial germanium films on silicon using hot-wire chemical vapor deposition

C. Mukherjee; H. Seitz; B. Schröder

Appl. Phys. Lett. 78, 3457–3459 (2001) https://doi.org/10.1063/1.1371789

Abstract

View articletitled, Growth of epitaxial germanium films on silicon using hot-wire chemical vapor deposition

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Formation of shallow acceptor states in the surface region of thin film diamond

Oliver A. Williams; Michael D. Whitfield; Richard B. Jackman; John S. Foord; James E. Butler; Christoph E. Nebel

Appl. Phys. Lett. 78, 3460–3462 (2001) https://doi.org/10.1063/1.1345806

Abstract

View articletitled, Formation of shallow acceptor states in the surface region of thin film diamond

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Passivation of dislocations in GaAs grown on Si substrates by phosphine $({PH}_{3})$ plasma exposure

G. Wang; T. Ogawa; T. Soga; T. Jimbo; M. Umeno

Appl. Phys. Lett. 78, 3463–3465 (2001) https://doi.org/10.1063/1.1376433

Abstract

View articletitled, Passivation of dislocations in GaAs grown on Si substrates by phosphine <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">PH</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><mi xmlns="">)</mi></math> plasma exposure

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Ballistic transport in a ${GaAs/Al}_{x} {Ga}_{1−x} As$ one-dimensional channel fabricated using an atomic force microscope

N. J. Curson; R. Nemutudi; N. J. Appleyard; M. Pepper; D. A. Ritchie; G. A. C. Jones

Appl. Phys. Lett. 78, 3466–3468 (2001) https://doi.org/10.1063/1.1374225

Abstract

View articletitled, Ballistic transport in a <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">GaAs/Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math> one-dimensional channel fabricated using an atomic force microscope

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Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition

Jun Tatebayashi; Masao Nishioka; Yasuhiko Arakawa

Appl. Phys. Lett. 78, 3469–3471 (2001) https://doi.org/10.1063/1.1375842

Abstract

View articletitled, Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition

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Hydrogen-induced band gap tuning of (InGa)(AsN)/GaAs single quantum wells

G. Baldassarri H. v. H.; M. Bissiri; A. Polimeni; M. Capizzi; M. Fischer; M. Reinhardt; A. Forchel

Appl. Phys. Lett. 78, 3472–3474 (2001) https://doi.org/10.1063/1.1376436

Abstract

View articletitled, Hydrogen-induced band gap tuning of (InGa)(AsN)/GaAs single quantum wells

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Magnetic and structural properties of Mn-implanted GaN

N. Theodoropoulou; A. F. Hebard; M. E. Overberg; C. R. Abernathy; S. J. Pearton; S. N. G. Chu; R. G. Wilson

Appl. Phys. Lett. 78, 3475–3477 (2001) https://doi.org/10.1063/1.1376659

Abstract

View articletitled, Magnetic and structural properties of Mn-implanted GaN

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Ultrafast carrier relaxation in radiation-damaged silicon on sapphire studied by optical-pump–terahertz-probe experiments

K. P. H. Lui; F. A. Hegmann

Appl. Phys. Lett. 78, 3478–3480 (2001) https://doi.org/10.1063/1.1375841

Abstract

View articletitled, Ultrafast carrier relaxation in radiation-damaged silicon on sapphire studied by optical-pump–terahertz-probe experiments

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Electrical properties of low-arsenic-doped HgCdTe grown by molecular beam epitaxy

F. Aqariden; H. D. Shih; M. A. Kinch; H. F. Schaake

Appl. Phys. Lett. 78, 3481–3483 (2001) https://doi.org/10.1063/1.1370987

Abstract

View articletitled, Electrical properties of low-arsenic-doped HgCdTe grown by molecular beam epitaxy

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MAGNETISM AND SUPERCONDUCTIVITY

Magnetic-field-tunable photoluminescence transitions in antiferromagnetic EuTe epilayers layers with an effective g factor of 1140

W. Heiss; G. Prechtl; G. Springholz

Appl. Phys. Lett. 78, 3484–3486 (2001) https://doi.org/10.1063/1.1374222

Abstract

View articletitled, Magnetic-field-tunable photoluminescence transitions in antiferromagnetic EuTe epilayers layers with an effective g factor of 1140

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Tunnel magnetoresistance in magnetic tunnel junctions with a ZnS barrier

M. Guth; A. Dinia; G. Schmerber; H. A. M. van den Berg

Appl. Phys. Lett. 78, 3487–3489 (2001) https://doi.org/10.1063/1.1372206

Abstract

View articletitled, Tunnel magnetoresistance in magnetic tunnel junctions with a ZnS barrier

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Effective magnetostriction and magnetomechanical coupling of terfenol-D composites

Z. J. Guo; S. C. Busbridge; A. R. Piercy; Z. D. Zhang; X. G. Zhao; B. W. Wang

Appl. Phys. Lett. 78, 3490–3492 (2001) https://doi.org/10.1063/1.1377046

Abstract

View articletitled, Effective magnetostriction and magnetomechanical coupling of terfenol-D composites

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Influence of the local As antisite distribution on ferromagnetism in (Ga, Mn)As

Stefano Sanvito; Nicola A. Hill

Appl. Phys. Lett. 78, 3493–3495 (2001) https://doi.org/10.1063/1.1375834

Abstract

View articletitled, Influence of the local As antisite distribution on ferromagnetism in (Ga, Mn)As

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Magnetic tunnel junctions with tantalum oxide barriers displaying a magnetoresistance ratio of up to 10% at room temperature

M. F. Gillies; A. E. T. Kuiper; J. B. A. van Zon; J. M. Sturm

Appl. Phys. Lett. 78, 3496–3498 (2001) https://doi.org/10.1063/1.1372617

Abstract

View articletitled, Magnetic tunnel junctions with tantalum oxide barriers displaying a magnetoresistance ratio of up to 10% at room temperature

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Correlation between electroresistance and magnetoresistance in ${La}_{0.82} {Ca}_{0.18} {MnO}_{3}$ single crystal

V. Markovich; E. Rozenberg; Y. Yuzhelevski; G. Jung; G. Gorodetsky; D. A. Shulyatev; Ya. M. Mukovskii

Appl. Phys. Lett. 78, 3499–3501 (2001) https://doi.org/10.1063/1.1376147

Abstract

View articletitled, Correlation between electroresistance and magnetoresistance in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mi mathvariant="normal">0.82</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mi mathvariant="normal">0.18</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> single crystal

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Copper complex with a magnetic ordering temperature above 400 K

X. D. Yang; Lun Si; Jun Ding; John D. Ranford; Jagadese J. Vittal

Appl. Phys. Lett. 78, 3502–3504 (2001) https://doi.org/10.1063/1.1374500

Abstract

View articletitled, Copper complex with a magnetic ordering temperature above 400 K

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Strain-stabilized charge ordering and magnetorelaxor behaviors in Cr-doped $\Pr_{0.5} {Ca}_{0.5} {MnO}_{3}$ epitaxial thin films

Y. Ogimoto; M. Izumi; T. Manako; T. Kimura; Y. Tomioka; M. Kawasaki; Y. Tokura

Appl. Phys. Lett. 78, 3505–3507 (2001) https://doi.org/10.1063/1.1376146

Abstract

View articletitled, Strain-stabilized charge ordering and magnetorelaxor behaviors in Cr-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pr</mi><mrow><mtext>0.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mtext>0.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mn>3</mn></mrow></msub></math> epitaxial thin films

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DIELECTRICS AND FERROELECTRICITY

Importance of random fields on the properties and ferroelectric phase stability of 〈001〉 oriented 0.7 ${Pb(Mg}_{1/3} {Nb}_{2/3} {)O}_{3} –0.3$ ${PbTiO}_{3}$ crystals

D. Viehland; J. Powers; L. E. Cross; J. F. Li

Appl. Phys. Lett. 78, 3508–3510 (2001) https://doi.org/10.1063/1.1368371

Abstract

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X-ray scattering evidence for the structural nature of fatigue in epitaxial ${Pb(Zr, Ti)O}_{3}$ films

Carol Thompson; A. Munkholm; S. K. Streiffer; G. B. Stephenson; K. Ghosh; J. A. Eastman; O. Auciello; G.-R. Bai; M. K. Lee; C. B. Eom

Appl. Phys. Lett. 78, 3511–3513 (2001) https://doi.org/10.1063/1.1375001

Abstract

View articletitled, X-ray scattering evidence for the structural nature of fatigue in epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pb(Zr, Ti)O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> films

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Low temperature synthesis and electrical properties of epitaxial ${Sr}_{0.8} {Bi}_{2.2} {Ta}_{2} O_{9}$ thin films

Soma Chattopadhyay; A. Kvit; D. Kumar; A. K. Sharma; J. Sankar; J. Narayan; V. S. Knight; T. S. Coleman; C. B. Lee

Appl. Phys. Lett. 78, 3514–3516 (2001) https://doi.org/10.1063/1.1374226

Abstract

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Dielectric properties of Mg-doped Ba_0.96Ca_0.04Ti_0.84Zr_0.16O₃ thin films fabricated by metalorganic decomposition method

Woo-Chul Yi; T. S. Kalkur; Elliott Philofsky; Lee Kammerdiner; Anthony A. Rywak

Appl. Phys. Lett. 78, 3517–3519 (2001) https://doi.org/10.1063/1.1375002

Abstract

View articletitled, Dielectric properties of Mg-doped Ba0.96Ca0.04Ti0.84Zr0.16O3 thin films fabricated by metalorganic decomposition method

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NANOSCALE SCIENCE AND DESIGN

Phonon-pumped terahertz gain in n-type GaAs/AlGaAs superlattices

Gregory Sun; Richard A. Soref

Appl. Phys. Lett. 78, 3520–3522 (2001) https://doi.org/10.1063/1.1376432

Abstract

View articletitled, Phonon-pumped terahertz gain in n-type GaAs/AlGaAs superlattices

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On the detectivity of quantum-dot infrared photodetectors

V. Ryzhii; I. Khmyrova; V. Mitin; M. Stroscio; M. Willander

Appl. Phys. Lett. 78, 3523–3525 (2001) https://doi.org/10.1063/1.1376435

Abstract

View articletitled, On the detectivity of quantum-dot infrared photodetectors

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High-density InP self-assembled quantum dots embedded in ${In}_{0.5} {Al}_{0.5} P$ grown by metalorganic chemical vapor deposition

J. H. Ryou; R. D. Dupuis; D. T. Mathes; R. Hull; C. V. Reddy; V. Narayanamurti

Appl. Phys. Lett. 78, 3526–3528 (2001) https://doi.org/10.1063/1.1376665

Abstract

View articletitled, High-density InP self-assembled quantum dots embedded in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mtext>0.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mtext>0.5</mtext></mrow></msub><mi mathvariant="normal" xmlns="">P</mi></math> grown by metalorganic chemical vapor deposition

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300 K operation of a GaAs-based quantum-cascade laser at λ≈9 μm

H. Page; C. Becker; A. Robertson; G. Glastre; V. Ortiz; C. Sirtori

Appl. Phys. Lett. 78, 3529–3531 (2001) https://doi.org/10.1063/1.1374520

Abstract

View articletitled, 300 K operation of a GaAs-based quantum-cascade laser at λ≈9 μm

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DEVICE PHYSICS

Size dependence of III-nitride microdisk light-emitting diode characteristics

S. X. Jin; J. Shakya; J. Y. Lin; H. X. Jiang

Appl. Phys. Lett. 78, 3532–3534 (2001) https://doi.org/10.1063/1.1376152

Abstract

View articletitled, Size dependence of III-nitride microdisk light-emitting diode characteristics

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Femtosecond carrier dynamics in an asymmetrically excited GaAs photoconductive switch

M. D. Cummings; J. F. Holzman; A. Y. Elezzabi

Appl. Phys. Lett. 78, 3535–3537 (2001) https://doi.org/10.1063/1.1377041

Abstract

View articletitled, Femtosecond carrier dynamics in an asymmetrically excited GaAs photoconductive switch

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Organic metal–semiconductor field-effect phototransistors

Jan Hendrik Schön; Christian Kloc

Appl. Phys. Lett. 78, 3538–3540 (2001) https://doi.org/10.1063/1.1376666

Abstract

View articletitled, Organic metal–semiconductor field-effect phototransistors

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Photodetectors fabricated from a self-assembly of a deoxyguanosine derivative

R. Rinaldi; E. Branca; R. Cingolani; S. Masiero; G. P. Spada; G. Gottarelli

Appl. Phys. Lett. 78, 3541–3543 (2001) https://doi.org/10.1063/1.1374232

Abstract

View articletitled, Photodetectors fabricated from a self-assembly of a deoxyguanosine derivative

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APPLIED BIOPHYSICS

Synchrotron hard x-ray microprobe: Fluorescence imaging of single cells

S. Bohic; A. Simionovici; A. Snigirev; R. Ortega; G. Devès; D. Heymann; C. G. Schroer

Appl. Phys. Lett. 78, 3544–3546 (2001) https://doi.org/10.1063/1.1366362

Abstract

View articletitled, Synchrotron hard x-ray microprobe: Fluorescence imaging of single cells

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INTERDISCIPLINARY AND GENERAL PHYSICS

Photon energy dependence of contrast in photoelectron emission microscopy of Si devices

V. W. Ballarotto; K. Siegrist; R. J. Phaneuf; E. D. Williams; W.-C. Yang; R. J. Nemanich

Appl. Phys. Lett. 78, 3547–3549 (2001) https://doi.org/10.1063/1.1376151

Abstract

View articletitled, Photon energy dependence of contrast in photoelectron emission microscopy of Si devices

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COMMENTS

Comment on “Self-assembled Ge nanostructures on polymer-coated silicon: Growth and characterization” [Appl. Phys. Lett. 77, 951 (2000)]

A. V. Kolobov; K. Tanaka

Appl. Phys. Lett. 78, 3550–3551 (2001) https://doi.org/10.1063/1.1375826

Abstract

View articletitled, Comment on “Self-assembled Ge nanostructures on polymer-coated silicon: Growth and characterization” [Appl. Phys. Lett. 77, 951 (2000)]

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Response to “Comment on ‘Self-assembled Ge nanostructures on polymer-coated silicon: Growth and characterization’ ” [Appl. Phys. Lett. 78, 3550 (2001)]

Amal K. Das; J. Kamila; B. N. Dev; B. Sundaravel; G. Kuri

Appl. Phys. Lett. 78, 3552–3553 (2001) https://doi.org/10.1063/1.1375827

View articletitled, Response to “Comment on ‘Self-assembled Ge nanostructures on polymer-coated silicon: Growth and characterization’ ” [Appl. Phys. Lett. 78, 3550 (2001)]

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