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LASERS, OPTICS, AND OPTOELECTRONICS

Transform-limited, narrow-linewidth, terahertz-wave parametric generator

Kodo Kawase; Jun-ichi Shikata; Kazuhiro Imai; Hiromasa Ito

Appl. Phys. Lett. 78, 2819–2821 (2001) https://doi.org/10.1063/1.1370988

Abstract

View articletitled, Transform-limited, narrow-linewidth, terahertz-wave parametric generator

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Divergence behavior due to surface channeling in capillary optics

G. Cappuccio; S. B. Dabagov; C. Gramaccioni; A. Pifferi

Appl. Phys. Lett. 78, 2822–2824 (2001) https://doi.org/10.1063/1.1370117

Abstract

View articletitled, Divergence behavior due to surface channeling in capillary optics

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Passive mode-locking in 1.3 μm two-section InAs quantum dot lasers

Xiaodong Huang; A. Stintz; Hua Li; L. F. Lester; Julian Cheng; K. J. Malloy

Appl. Phys. Lett. 78, 2825–2827 (2001) https://doi.org/10.1063/1.1371244

Abstract

View articletitled, Passive mode-locking in 1.3 μm two-section InAs quantum dot lasers

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Time-resolved probing of the Purcell effect for InAs quantum boxes in GaAs microdisks

B. Gayral; J.-M. Gérard; B. Sermage; A. Lemaı̂tre; C. Dupuis

Appl. Phys. Lett. 78, 2828–2830 (2001) https://doi.org/10.1063/1.1370123

Abstract

View articletitled, Time-resolved probing of the Purcell effect for InAs quantum boxes in GaAs microdisks

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One-dimensional cuprate as a nonlinear optical material for ultrafast all-optical switching

M. Ashida; T. Ogasawara; Y. Tokura; S. Uchida; S. Mazumdar; M. Kuwata-Gonokami

Appl. Phys. Lett. 78, 2831–2833 (2001) https://doi.org/10.1063/1.1370546

Abstract

View articletitled, One-dimensional cuprate as a nonlinear optical material for ultrafast all-optical switching

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Grating-tuned external-cavity quantum-cascade semiconductor lasers

G. P. Luo; C. Peng; H. Q. Le; S. S. Pei; W.-Y. Hwang; B. Ishaug; J. Um; James N. Baillargeon; C.-H. Lin

Appl. Phys. Lett. 78, 2834–2836 (2001) https://doi.org/10.1063/1.1371524

Abstract

View articletitled, Grating-tuned external-cavity quantum-cascade semiconductor lasers

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PLASMAS AND ELECTRICAL DISCHARGES

Energetics of vacuum arc cathode spots

André Anders

Appl. Phys. Lett. 78, 2837–2839 (2001) https://doi.org/10.1063/1.1370541

Abstract

View articletitled, Energetics of vacuum arc cathode spots

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Energy deposition at front and rear surfaces during picosecond laser interaction with fused silica

A. Salleo; F. Y. Génin; M. D. Feit; A. M. Rubenchik; T. Sands; S. S. Mao; R. E. Russo

Appl. Phys. Lett. 78, 2840–2842 (2001) https://doi.org/10.1063/1.1362332

Abstract

View articletitled, Energy deposition at front and rear surfaces during picosecond laser interaction with fused silica

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Spins and microstructure of hydrogenated amorphous carbon: A multiple frequency electron paramagnetic resonance study

H. J. von Bardeleben; J. L. Cantin; A. Zeinert; B. Racine; K. Zellama; P. N. Hai

Appl. Phys. Lett. 78, 2843–2845 (2001) https://doi.org/10.1063/1.1370980

Abstract

View articletitled, Spins and microstructure of hydrogenated amorphous carbon: A multiple frequency electron paramagnetic resonance study

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Coherent measurement of the dispersive curves of an elastic waveguide

Hailan Zhang; Shuwu Dai; Chengyu Zhang

Appl. Phys. Lett. 78, 2846–2848 (2001) https://doi.org/10.1063/1.1370542

Abstract

View articletitled, Coherent measurement of the dispersive curves of an elastic waveguide

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Strong photoluminescence emission from polycrystalline GaN layers grown on W, Mo, Ta, and Nb metal substrates

K. Yamada; H. Asahi; H. Tampo; Y. Imanishi; K. Ohnishi; K. Asami

Appl. Phys. Lett. 78, 2849–2851 (2001) https://doi.org/10.1063/1.1371528

Abstract

View articletitled, Strong photoluminescence emission from polycrystalline GaN layers grown on W, Mo, Ta, and Nb metal substrates

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Strain-driven self-positioning of micromachined structures

Pablo O. Vaccaro; Kazuyoshi Kubota; Tahito Aida

Appl. Phys. Lett. 78, 2852–2854 (2001) https://doi.org/10.1063/1.1371525

Abstract

View articletitled, Strain-driven self-positioning of micromachined structures

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Incorporation of beryllium on the clean and indium-terminated GaN(0001) surface

John E. Northrup

Appl. Phys. Lett. 78, 2855–2857 (2001) https://doi.org/10.1063/1.1368369

Abstract

View articletitled, Incorporation of beryllium on the clean and indium-terminated GaN(0001) surface

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Growth of high-quality GaN on Si(111) substrate by ultrahigh vacuum chemical vapor deposition

Min-Ho Kim; Young-Churl Bang; Nae-Man Park; Chel-Jong Choi; Tae-Yeon Seong; Seong-Ju Park

Appl. Phys. Lett. 78, 2858–2860 (2001) https://doi.org/10.1063/1.1371539

Abstract

View articletitled, Growth of high-quality GaN on Si(111) substrate by ultrahigh vacuum chemical vapor deposition

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Excitonic transitions in ZnO/MgZnO quantum well heterostructures

Giuliano Coli; K. K. Bajaj

Appl. Phys. Lett. 78, 2861–2863 (2001) https://doi.org/10.1063/1.1370116

Abstract

View articletitled, Excitonic transitions in ZnO/MgZnO quantum well heterostructures

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Lattice parameter in GaNAs epilayers on GaAs: Deviation from Vegard’s law

Wei Li; Markus Pessa; Jari Likonen

Appl. Phys. Lett. 78, 2864–2866 (2001) https://doi.org/10.1063/1.1370549

Abstract

View articletitled, Lattice parameter in GaNAs epilayers on GaAs: Deviation from Vegard’s law

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Direct observation of voids in the vacancy excess region of ion bombarded silicon

J. S. Williams; M. J. Conway; B. C. Williams; J. Wong-Leung

Appl. Phys. Lett. 78, 2867–2869 (2001) https://doi.org/10.1063/1.1352662

Abstract

View articletitled, Direct observation of voids in the vacancy excess region of ion bombarded silicon

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Helium/deuterium coimplanted silicon: A thermal desorption spectrometry investigation

F. Corni; C. Nobili; R. Tonini; G. Ottaviani; M. Tonelli

Appl. Phys. Lett. 78, 2870–2872 (2001) https://doi.org/10.1063/1.1344568

Abstract

View articletitled, Helium/deuterium coimplanted silicon: A thermal desorption spectrometry investigation

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Scanning Kelvin probe microscopy characterization of dislocations in III-nitrides grown by metalorganic chemical vapor deposition

G. Koley; M. G. Spencer

Appl. Phys. Lett. 78, 2873–2875 (2001) https://doi.org/10.1063/1.1369390

Abstract

View articletitled, Scanning Kelvin probe microscopy characterization of dislocations in III-nitrides grown by metalorganic chemical vapor deposition

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Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN

Sten Heikman; Stacia Keller; Steven P. DenBaars; Umesh K. Mishra

Appl. Phys. Lett. 78, 2876–2878 (2001) https://doi.org/10.1063/1.1369609

Abstract

View articletitled, Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN

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Charge transfer of carriers by interband photoexcitation in asymmetric GaAs/AlGaAs coupled quantum wells

M. Levy; Yu. L. Khait; R. Beserman; A. Sa’ar; V. Thierry-Mieg; R. Planel

Appl. Phys. Lett. 78, 2879–2881 (2001) https://doi.org/10.1063/1.1369413

Abstract

View articletitled, Charge transfer of carriers by interband photoexcitation in asymmetric GaAs/AlGaAs coupled quantum wells

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Transient photoluminescence of defect transitions in freestanding GaN

M. A. Reshchikov; H. Morkoç; S. S. Park; K. Y. Lee

Appl. Phys. Lett. 78, 2882–2884 (2001) https://doi.org/10.1063/1.1370119

Abstract

View articletitled, Transient photoluminescence of defect transitions in freestanding GaN

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Thickness effects on imprint in chemical-solution-derived $({Pb, La)(Zr, Ti)O}_{3}$ thin films

Seung-Hyun Kim; Hyun-Jung Woo; Jowoong Ha; Cheol Seong Hwang; Hae Ryoung Kim; Angus I. Kingon

Appl. Phys. Lett. 78, 2885–2887 (2001) https://doi.org/10.1063/1.1370989

Abstract

View articletitled, Thickness effects on imprint in chemical-solution-derived <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Pb, La)(Zr, Ti)O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> thin films

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Wide bandwidth millimeter wave mixer using a diffusion cooled two-dimensional electron gas

Mark Lee; L. N. Pfeiffer; K. W. West; K. W. Baldwin

Appl. Phys. Lett. 78, 2888–2890 (2001) https://doi.org/10.1063/1.1370982

Abstract

View articletitled, Wide bandwidth millimeter wave mixer using a diffusion cooled two-dimensional electron gas

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Band-gap engineering in sputter-deposited ${Sc}_{x} {Ga}_{1−x} N$

M. E. Little; M. E. Kordesch

Appl. Phys. Lett. 78, 2891–2892 (2001) https://doi.org/10.1063/1.1370548

Abstract

View articletitled, Band-gap engineering in sputter-deposited <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Sc</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">N</mi></math>

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Investigation of phonon emission processes in an AlGaN/GaN heterostructure at low temperatures

K. J. Lee; J. J. Harris; A. J. Kent; T. Wang; S. Sakai; D. K. Maude; J.-C. Portal

Appl. Phys. Lett. 78, 2893–2895 (2001) https://doi.org/10.1063/1.1367310

Abstract

View articletitled, Investigation of phonon emission processes in an AlGaN/GaN heterostructure at low temperatures

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Compression of the dc drain current by electron trapping in AlGaN/GaN modulation doped field-effect transistors

S. Nozaki; H. Feick; E. R. Weber; M. Micovic; C. Nguyen

Appl. Phys. Lett. 78, 2896–2898 (2001) https://doi.org/10.1063/1.1367274

Abstract

View articletitled, Compression of the dc drain current by electron trapping in AlGaN/GaN modulation doped field-effect transistors

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Low-temperature activation of Mg-doped GaN using Ni films

I. Waki; H. Fujioka; M. Oshima; H. Miki; A. Fukizawa

Appl. Phys. Lett. 78, 2899–2901 (2001) https://doi.org/10.1063/1.1371537

Abstract

View articletitled, Low-temperature activation of Mg-doped GaN using Ni films

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Carrier thermalization versus phonon-assisted relaxation in quantum-cascade lasers: A Monte Carlo approach

Rita Claudia Iotti; Fausto Rossi

Appl. Phys. Lett. 78, 2902–2904 (2001) https://doi.org/10.1063/1.1370537

Abstract

View articletitled, Carrier thermalization versus phonon-assisted relaxation in quantum-cascade lasers: A Monte Carlo approach

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Adiabatic pumping of two-dimensional electrons in a ratchet-type lateral superlattice

E. M. Höhberger; A. Lorke; W. Wegscheider; M. Bichler

Appl. Phys. Lett. 78, 2905–2907 (2001) https://doi.org/10.1063/1.1355672

Abstract

View articletitled, Adiabatic pumping of two-dimensional electrons in a ratchet-type lateral superlattice

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Nitrogen deactivation by implantation-induced defects in 4H–SiC epitaxial layers

D. Åberg; A. Hallén; P. Pellegrino; B. G. Svensson

Appl. Phys. Lett. 78, 2908–2910 (2001) https://doi.org/10.1063/1.1369611

Abstract

View articletitled, Nitrogen deactivation by implantation-induced defects in 4H–SiC epitaxial layers

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MAGNETISM AND SUPERCONDUCTIVITY

Annealing effect of magnetic tunnel junctions with one FeOx layer inserted at the ${Al}_{2} O_{3} / CoFe$ interface

Zongzhi Zhang; Susana Cardoso; P. P. Freitas; P. Wei; N. Barradas; J. C. Soares

Appl. Phys. Lett. 78, 2911–2913 (2001) https://doi.org/10.1063/1.1371538

Abstract

View articletitled, Annealing effect of magnetic tunnel junctions with one FeOx layer inserted at the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">CoFe</mi></math> interface

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Superconducting properties of ${MgB}_{2}$ bulk materials prepared by high-pressure sintering

Y. Takano; H. Takeya; H. Fujii; H. Kumakura; T. Hatano; K. Togano; H. Kito; H. Ihara

Appl. Phys. Lett. 78, 2914–2916 (2001) https://doi.org/10.1063/1.1371239

Abstract

View articletitled, Superconducting properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">MgB</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> bulk materials prepared by high-pressure sintering

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Consequence of isovalent rare earth substitution to magnetic irreversibility in cation-stoichiometric ${CuBa}_{2} {RECu}_{2} O_{6.93±0.01}$

Yukiko Yasukawa; Takayuki Nakane; Hisao Yamauchi; Maarit Karppinen

Appl. Phys. Lett. 78, 2917–2919 (2001) https://doi.org/10.1063/1.1370990

Abstract

View articletitled, Consequence of isovalent rare earth substitution to magnetic irreversibility in cation-stoichiometric <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CuBa</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">RECu</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mtext>6.93±0.01</mtext></mrow></msub></math>

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DIELECTRICS AND FERROELECTRICITY

Observation of the flexoelectric effect in relaxor $Pb ({Mg}_{1/3} {Nb}_{2/3}) O_{3}$ ceramics

Wenhui Ma; L. Eric Cross

Appl. Phys. Lett. 78, 2920–2921 (2001) https://doi.org/10.1063/1.1356444

Abstract

View articletitled, Observation of the flexoelectric effect in relaxor <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Pb</mi><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Mg</mi><mrow><mtext>1/3</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Nb</mi><mrow><mtext>2/3</mtext></mrow></msub><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> ceramics

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Epitaxial growth of (103)-oriented ferroelectric ${SrBi}_{2} {Ta}_{2} O_{9}$ thin films on Si(100)

Ho Nyung Lee; Stephan Senz; Alain Pignolet; Dietrich Hesse

Appl. Phys. Lett. 78, 2922–2924 (2001) https://doi.org/10.1063/1.1370984

Abstract

View articletitled, Epitaxial growth of (103)-oriented ferroelectric <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrBi</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ta</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>9</mn></mrow></msub></math> thin films on Si(100)

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${CaBi}_{2} {Ta}_{2} O_{9}$ ferroelectric thin films prepared by pulsed laser deposition

Rasmi R. Das; R. J. Rodriguéz; Ram S. Katiyar; S. B. Krupanidhi

Appl. Phys. Lett. 78, 2925–2927 (2001) https://doi.org/10.1063/1.1370545

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CaBi</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ta</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>9</mn></mrow></msub></math> ferroelectric thin films prepared by pulsed laser deposition

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NANOSCALE SCIENCE AND DESIGN

Dual-probe scanning tunneling microscope: Measuring a carbon nanotube ring transistor

Hiroyuki Watanabe; Chikara Manabe; Taishi Shigematsu; Masaaki Shimizu

Appl. Phys. Lett. 78, 2928–2930 (2001) https://doi.org/10.1063/1.1371529

Abstract

View articletitled, Dual-probe scanning tunneling microscope: Measuring a carbon nanotube ring transistor

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Nanoscale radiative heat transfer between a small particle and a plane surface

Jean-Philippe Mulet; Karl Joulain; Rémi Carminati; Jean-Jacques Greffet

Appl. Phys. Lett. 78, 2931–2933 (2001) https://doi.org/10.1063/1.1370118

Abstract

View articletitled, Nanoscale radiative heat transfer between a small particle and a plane surface

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Oxide thickness mapping of ultrathin ${Al}_{2} O_{3}$ at nanometer scale with conducting atomic force microscopy

Alexander Olbrich; Bernd Ebersberger; Christian Boit; Johann Vancea; Horst Hoffmann; Hans Altmann; Guenther Gieres; Joachim Wecker

Appl. Phys. Lett. 78, 2934–2936 (2001) https://doi.org/10.1063/1.1369152

Abstract

View articletitled, Oxide thickness mapping of ultrathin <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> at nanometer scale with conducting atomic force microscopy

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Selective thermal interdiffusion using patterned ${SiO}_{2}$ masks: An alternative approach to buried CdTe/CdMgTe quantum wires

M. K. Welsch; H. Schömig; M. Legge; G. Bacher; A. Forchel; B. König; C. R. Becker; W. Ossau; L. W. Molenkamp

Appl. Phys. Lett. 78, 2937–2939 (2001) https://doi.org/10.1063/1.1360226

Abstract

View articletitled, Selective thermal interdiffusion using patterned <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> masks: An alternative approach to buried CdTe/CdMgTe quantum wires

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Electron beam-induced carbon masking for electrodeposition on semiconductor surfaces

T. Djenizian; L. Santinacci; P. Schmuki

Appl. Phys. Lett. 78, 2940–2942 (2001) https://doi.org/10.1063/1.1371243

Abstract

View articletitled, Electron beam-induced carbon masking for electrodeposition on semiconductor surfaces

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DNA-mediated electrostatic assembly of gold nanoparticles into linear arrays by a simple drop-coating procedure

Murali Sastry; Ashavani Kumar; Suvarna Datar; C. V. Dharmadhikari; Krishna N. Ganesh

Appl. Phys. Lett. 78, 2943–2945 (2001) https://doi.org/10.1063/1.1370993

Abstract

View articletitled, DNA-mediated electrostatic assembly of gold nanoparticles into linear arrays by a simple drop-coating procedure

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Luminescence quenching in InAs quantum dots

Dirk Haft; Richard J. Warburton; Khaled Karrai; Serge Huant; Gilberto Medeiros-Ribeiro; Jorge M. Garcia; Winston Schoenfeld; Pierre M. Petroff

Appl. Phys. Lett. 78, 2946–2948 (2001) https://doi.org/10.1063/1.1356445

Abstract

View articletitled, Luminescence quenching in InAs quantum dots

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Formation of GaAs nanocrystals by laser ablation

J. Perrière; E. Millon; M. Chamarro; M. Morcrette; C. Andreazza

Appl. Phys. Lett. 78, 2949–2951 (2001) https://doi.org/10.1063/1.1370992

Abstract

View articletitled, Formation of GaAs nanocrystals by laser ablation

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Temperature influence on optical charging of self-assembled InAs/GaAs semiconductor quantum dots

K. F. Karlsson; E. S. Moskalenko; P. O. Holtz; B. Monemar; W. V. Schoenfeld; J. M. Garcia; P. M. Petroff

Appl. Phys. Lett. 78, 2952–2954 (2001) https://doi.org/10.1063/1.1370547

Abstract

View articletitled, Temperature influence on optical charging of self-assembled InAs/GaAs semiconductor quantum dots

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Shear-mode scanning capacitance microscope

Yuichi Naitou; Norio Ookubo

Appl. Phys. Lett. 78, 2955–2957 (2001) https://doi.org/10.1063/1.1371523

Abstract

View articletitled, Shear-mode scanning capacitance microscope

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Photocurrent and photoluminescence of a single self-assembled quantum dot in electric fields

F. Findeis; M. Baier; E. Beham; A. Zrenner; G. Abstreiter

Appl. Phys. Lett. 78, 2958–2960 (2001) https://doi.org/10.1063/1.1369148

Abstract

View articletitled, Photocurrent and photoluminescence of a single self-assembled quantum dot in electric fields

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Relationship between surface reconstruction and morphology of strained ${Ga}_{1−x} {In}_{x} P$ layers grown on GaP (001) by gas-source molecular-beam epitaxy

X. Wallart; D. Deresmes; F. Mollot

Appl. Phys. Lett. 78, 2961–2963 (2001) https://doi.org/10.1063/1.1371242

Abstract

View articletitled, Relationship between surface reconstruction and morphology of strained <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi>x</mi></mrow></msub><mi mathvariant="normal" xmlns="">P</mi></math> layers grown on GaP (001) by gas-source molecular-beam epitaxy

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Electrodeposition of highly uniform magnetic nanoparticle arrays in ordered alumite

Ming Sun; Giovanni Zangari; Mohammad Shamsuzzoha; Robert M. Metzger

Appl. Phys. Lett. 78, 2964–2966 (2001) https://doi.org/10.1063/1.1370986

Abstract

View articletitled, Electrodeposition of highly uniform magnetic nanoparticle arrays in ordered alumite

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DEVICE PHYSICS

Development of thin-film metal hydrides for integration into field emission displays

Babu R. Chalamala; Robert H. Reuss

Appl. Phys. Lett. 78, 2967–2969 (2001) https://doi.org/10.1063/1.1371241

Abstract

View articletitled, Development of thin-film metal hydrides for integration into field emission displays

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INTERDISCIPLINARY AND GENERAL PHYSICS

Imaging the temporal evolution of nuclear resonant x-ray scattering

R. Röhlsberger; K. W. Quast; T. S. Toellner; P. L. Lee; W. Sturhahn; E. E. Alp; E. Burkel

Appl. Phys. Lett. 78, 2970–2972 (2001) https://doi.org/10.1063/1.1361276

Abstract

View articletitled, Imaging the temporal evolution of nuclear resonant x-ray scattering

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Analysis of tip–sample interaction in tapping-mode atomic force microscope using an electrical circuit simulator

O. Sahin; A. Atalar

Appl. Phys. Lett. 78, 2973–2975 (2001) https://doi.org/10.1063/1.1369614

Abstract

View articletitled, Analysis of tip–sample interaction in tapping-mode atomic force microscope using an electrical circuit simulator

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Universal solders for direct and powerful bonding on semiconductors, diamond, and optical materials

Hareesh Mavoori; Ainissa G. Ramirez; Sungho Jin

Appl. Phys. Lett. 78, 2976–2978 (2001) https://doi.org/10.1063/1.1370985

Abstract

View articletitled, Universal solders for direct and powerful bonding on semiconductors, diamond, and optical materials

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Two-dimensional spatial distribution of electric-discharge plasma around a frictional interface between dielectric surfaces

Takashi Miura; Keiji Nakayama

Appl. Phys. Lett. 78, 2979–2981 (2001) https://doi.org/10.1063/1.1371526

Abstract

View articletitled, Two-dimensional spatial distribution of electric-discharge plasma around a frictional interface between dielectric surfaces

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Active atomic force microscopy cantilevers for imaging in liquids

A. Buguin; O. Du Roure; P. Silberzan

Appl. Phys. Lett. 78, 2982–2984 (2001) https://doi.org/10.1063/1.1371250

Abstract

View articletitled, Active atomic force microscopy cantilevers for imaging in liquids

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Recording of x-ray holograms on a position-sensitive detector

Milos Kopecky; Edoardo Busetto; Andrea Lausi; Marino Miculin; Adolfo Savoia

Appl. Phys. Lett. 78, 2985–2987 (2001) https://doi.org/10.1063/1.1371527

Abstract

View articletitled, Recording of x-ray holograms on a position-sensitive detector

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ERRATA

Erratum: “Solid–liquid interface velocity and diffusivity in laser-melt amorphous silicon” [Appl. Phys. Lett. 77, 2337 (2000)]

Luigi Brambilla; Luciano Colombo; Vittorio Rosato; Fabrizio Cleri

Appl. Phys. Lett. 78, 2988 (2001) https://doi.org/10.1063/1.1349865

View articletitled, Erratum: “Solid–liquid interface velocity and diffusivity in laser-melt amorphous silicon” [Appl. Phys. Lett. 77, 2337 (2000)]

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Erratum: “All Ya–Ba–Cu–O c-axis trilayer interface-engineered Josephson junctions” [Appl. Phys. Lett. 78, 790 (2001)]

B. H. Moeckly

Appl. Phys. Lett. 78, 2988 (2001) https://doi.org/10.1063/1.1370955

View articletitled, Erratum: “All Ya–Ba–Cu–O c-axis trilayer interface-engineered Josephson junctions” [Appl. Phys. Lett. 78, 790 (2001)]

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