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Issues
23 April 2001
ISSN 0003-6951
EISSN 1077-3118
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS
Local plasmon photonic transistor
Appl. Phys. Lett. 78, 2417–2419 (2001)
https://doi.org/10.1063/1.1367905
Asymmetric switching of antiferroelectric liquid-crystal cells
Appl. Phys. Lett. 78, 2422–2424 (2001)
https://doi.org/10.1063/1.1365945
Quasioptic dielectric tetrahertz cavity: Coupled through optical tunneling
Appl. Phys. Lett. 78, 2425–2427 (2001)
https://doi.org/10.1063/1.1367901
Near-room-temperature operation of an InAs/GaAs quantum-dot infrared photodetector
Appl. Phys. Lett. 78, 2428–2430 (2001)
https://doi.org/10.1063/1.1362201
Optimization of elastomeric phase masks for near-field photolithography
Appl. Phys. Lett. 78, 2431–2433 (2001)
https://doi.org/10.1063/1.1367898
Polymer photonic crystal slab waveguides
C. Liguda; G. Böttger; A. Kuligk; R. Blum; M. Eich; H. Roth; J. Kunert; W. Morgenroth; H. Elsner; H. G. Meyer
Appl. Phys. Lett. 78, 2434–2436 (2001)
https://doi.org/10.1063/1.1366364
Diamond-like carbon films as electron-injection layer in organic light emitting diodes
Appl. Phys. Lett. 78, 2437–2439 (2001)
https://doi.org/10.1063/1.1367900
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
Stoichiometry-induced roughness on antimonide growth surfaces
A. S. Bracker; B. Z. Nosho; W. Barvosa-Carter; L. J. Whitman; B. R. Bennett; B. V. Shanabrook; J. C. Culbertson
Appl. Phys. Lett. 78, 2440–2442 (2001)
https://doi.org/10.1063/1.1366360
Stability of zirconium silicate films on Si under vacuum and annealing
J. Morais; E. B. O. da Rosa; L. Miotti; R. P. Pezzi; I. J. R. Baumvol; A. L. P. Rotondaro; M. J. Bevan; L. Colombo
Appl. Phys. Lett. 78, 2446–2448 (2001)
https://doi.org/10.1063/1.1367288
Superlow friction behavior of diamond-like carbon coatings: Time and speed effects
Appl. Phys. Lett. 78, 2449–2451 (2001)
https://doi.org/10.1063/1.1366649
Excimer laser-induced expansion in hydrogen-loaded silica
Appl. Phys. Lett. 78, 2452–2454 (2001)
https://doi.org/10.1063/1.1368186
Surface anchoring energy modulation in liquid crystal cells with mixed conductor boundary layers
Appl. Phys. Lett. 78, 2455–2457 (2001)
https://doi.org/10.1063/1.1368182
Residual arsenic site in oxidized
S.-K. Cheong; B. A. Bunker; T. Shibata; D. C. Hall; C. B. DeMelo; Y. Luo; G. L. Snider; G. Kramer; N. El-Zein
Appl. Phys. Lett. 78, 2458–2460 (2001)
https://doi.org/10.1063/1.1367307
Phase-transition-induced residual strain in ferromagnetic MnAs films epitaxially grown on GaAs(001)
Appl. Phys. Lett. 78, 2461–2463 (2001)
https://doi.org/10.1063/1.1367302
Temperature dependence of excitonic absorption spectra in multiquantum wells grown on lattice-matched substrates
Appl. Phys. Lett. 78, 2464–2466 (2001)
https://doi.org/10.1063/1.1367300
Self-assembled near-zero-thickness molecular layers as diffusion barriers for Cu metallization
Appl. Phys. Lett. 78, 2467–2469 (2001)
https://doi.org/10.1063/1.1365418
Growth and characterization of BeCdSe alloys and BeCdSe/ZnCdMgSe quantum wells on InP substrates
Appl. Phys. Lett. 78, 2473–2475 (2001)
https://doi.org/10.1063/1.1368192
Charge-ordering modulation observed in the phase of the multiphased manganite at room temperature
Appl. Phys. Lett. 78, 2479–2481 (2001)
https://doi.org/10.1063/1.1368183
Nanoscale fracture studies using the scanning force microscope
Appl. Phys. Lett. 78, 2485–2487 (2001)
https://doi.org/10.1063/1.1367297
Cooperative nucleation and evolution in InGaAs quantum dots in multiply stacked structures
Appl. Phys. Lett. 78, 2491–2493 (2001)
https://doi.org/10.1063/1.1365102
Investigation of inversion domains in GaN by electric-force microscopy
Appl. Phys. Lett. 78, 2497–2499 (2001)
https://doi.org/10.1063/1.1358359
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
What determines the emission peak energy of the blue luminescence in highly Mg-doped
Appl. Phys. Lett. 78, 2500–2502 (2001)
https://doi.org/10.1063/1.1367904
Electron affinity of surfaces
Appl. Phys. Lett. 78, 2503–2505 (2001)
https://doi.org/10.1063/1.1367275
Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with subtle boron compensation
Appl. Phys. Lett. 78, 2509–2511 (2001)
https://doi.org/10.1063/1.1368185
On the nature of the -defect center in SiC: A photoluminescence study of layers grown by solid-source molecular-beam epitaxy
Appl. Phys. Lett. 78, 2512–2514 (2001)
https://doi.org/10.1063/1.1367883
Thermal-annealing dependence of C-related atomic configuration in crystals grown by ultra-high-vacuum chemical-vapor deposition
Appl. Phys. Lett. 78, 2515–2517 (2001)
https://doi.org/10.1063/1.1367294
Low-frequency photocurrent noise in semiconductors: Effect of nonlinear current–voltage characteristics
Appl. Phys. Lett. 78, 2518–2520 (2001)
https://doi.org/10.1063/1.1368188
Switching behavior of semiconducting carbon nanotubes under an external electric field
Appl. Phys. Lett. 78, 2521–2523 (2001)
https://doi.org/10.1063/1.1367295
Spectrum dynamics of negative-effective-mass oscillators under terahertz radiation
Appl. Phys. Lett. 78, 2524–2526 (2001)
https://doi.org/10.1063/1.1364661
MAGNETISM AND SUPERCONDUCTIVITY
Possible giant magnetoelectric effect of ferromagnetic rare-earth–iron-alloys-filled ferroelectric polymers
Appl. Phys. Lett. 78, 2527–2529 (2001)
https://doi.org/10.1063/1.1367293
Intrinsic exchange biasing in MnAs epilayers grown on (001) GaAs
Appl. Phys. Lett. 78, 2530–2532 (2001)
https://doi.org/10.1063/1.1367306
Inelastic magnon and phonon excitations in -oxide/Al tunnel junctions
Appl. Phys. Lett. 78, 2533–2535 (2001)
https://doi.org/10.1063/1.1367882
DIELECTRICS AND FERROELECTRICITY
Dielectric properties of strained thin films epitaxially grown on Si with thin yttria-stabilized zirconia buffer layer
Appl. Phys. Lett. 78, 2542–2544 (2001)
https://doi.org/10.1063/1.1367309
Dielectric properties of at microwave frequencies between 10 and 400 K
Appl. Phys. Lett. 78, 2545–2547 (2001)
https://doi.org/10.1063/1.1365415
Changes in the interface capacitance for fatigued lead–zirconate–titanate capacitors
Appl. Phys. Lett. 78, 2548–2550 (2001)
https://doi.org/10.1063/1.1367301
Piezoelectric properties of 〈001〉 textured ceramics
Appl. Phys. Lett. 78, 2551–2553 (2001)
https://doi.org/10.1063/1.1367291
Liquid-crystal display of stress fields in ferroelectrics
Appl. Phys. Lett. 78, 2554–2556 (2001)
https://doi.org/10.1063/1.1365417
NANOSCALE SCIENCE AND DESIGN
Direct patterning of photosensitive low-dielectric-constant films using electron-beam lithography
Appl. Phys. Lett. 78, 2557–2559 (2001)
https://doi.org/10.1063/1.1360777
Characterization of electrical conduction in silicon nanowire by scanning Maxwell-stress microscopy
Appl. Phys. Lett. 78, 2560–2562 (2001)
https://doi.org/10.1063/1.1365416
Local structure of Ge nanoislands on Si(111) surfaces with a coverage
Alexander V. Kolobov; Alexander A. Shklyaev; Hiroyuki Oyanagi; Paul Fons; Satoshi Yamasaki; Masakazu Ichikawa
Appl. Phys. Lett. 78, 2563–2565 (2001)
https://doi.org/10.1063/1.1367287
Optical patterning and photochemical fixation of polymer nanoparticles on glass substrates
Appl. Phys. Lett. 78, 2566–2568 (2001)
https://doi.org/10.1063/1.1366646
Organic nanocrystals grown in gel glasses for optical-power-limiting applications
Appl. Phys. Lett. 78, 2569–2571 (2001)
https://doi.org/10.1063/1.1364660
Refrigeration by combined tunneling and thermionic emission in vacuum: Use of nanometer scale design
Appl. Phys. Lett. 78, 2572–2574 (2001)
https://doi.org/10.1063/1.1365944
Band gap engineering of amorphous silicon quantum dots for light-emitting diodes
Appl. Phys. Lett. 78, 2575–2577 (2001)
https://doi.org/10.1063/1.1367277
Carbon nanotubes as electron source in an x-ray tube
Appl. Phys. Lett. 78, 2578–2580 (2001)
https://doi.org/10.1063/1.1367278
DEVICE PHYSICS
Proton irradiation of InAs/AlSb/GaSb resonant interband tunneling diodes
Appl. Phys. Lett. 78, 2581–2583 (2001)
https://doi.org/10.1063/1.1363697
Solvent-enhanced dye diffusion in polymer thin films for color tuning of organic light-emitting diodes
Appl. Phys. Lett. 78, 2584–2586 (2001)
https://doi.org/10.1063/1.1366368
Terahertz detection by high-electron-mobility transistor: Enhancement by drain bias
Appl. Phys. Lett. 78, 2587–2588 (2001)
https://doi.org/10.1063/1.1367289
APPLIED BIOPHYSICS
Responsive biomimetic hydrogel valve for microfluidics
Appl. Phys. Lett. 78, 2589–2591 (2001)
https://doi.org/10.1063/1.1367010
INTERDISCIPLINARY AND GENERAL PHYSICS
Low-temperature scanning probe microscopy of surface and subsurface charges
Appl. Phys. Lett. 78, 2592–2594 (2001)
https://doi.org/10.1063/1.1360780
Surface electronic structure of plasma-treated indium tin oxides
Appl. Phys. Lett. 78, 2595–2597 (2001)
https://doi.org/10.1063/1.1367897
Frictional properties of perfluoropolyether monolayers investigated with quartz resonators
Appl. Phys. Lett. 78, 2601–2603 (2001)
https://doi.org/10.1063/1.1360781
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer
Mritunjay Kumar, Vishal Khandelwal, et al.