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LASERS, OPTICS, AND OPTOELECTRONICS

Temperature profile of GaInAs/AlInAs/InP quantum cascade-laser facets measured by microprobe photoluminescence

Vincenzo Spagnolo; Mariano Troccoli; Gaetano Scamarcio; Claire Gmachl; Federico Capasso; Alessandro Tredicucci; A. Michael Sergent; Albert L. Hutchinson; Deborah L. Sivco; Alfred Y. Cho

Appl. Phys. Lett. 78, 2095–2097 (2001) https://doi.org/10.1063/1.1359146

Abstract

View articletitled, Temperature profile of GaInAs/AlInAs/InP quantum cascade-laser facets measured by microprobe photoluminescence

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Dispersion of the ordinary refractive-index change in a proton-exchanged ${LiNbO}_{3}$ waveguide

R. Ramponi; M. Marangoni; R. Osellame

Appl. Phys. Lett. 78, 2098–2100 (2001) https://doi.org/10.1063/1.1359136

Abstract

View articletitled, Dispersion of the ordinary refractive-index change in a proton-exchanged <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LiNbO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> waveguide

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Leveraging deep photonic band gaps in photonic crystal impurity bands

Sheng Lan; Satoshi Nishikawa; Osamu Wada

Appl. Phys. Lett. 78, 2101–2103 (2001) https://doi.org/10.1063/1.1362328

Abstract

View articletitled, Leveraging deep photonic band gaps in photonic crystal impurity bands

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Origin of abnormal temperature dependence of electroluminescence from Er/O-doped Si diodes

G. V. Hansson; W.-X. Ni; C.-X. Du; A. Elfving; F. Duteil

Appl. Phys. Lett. 78, 2104–2106 (2001) https://doi.org/10.1063/1.1359781

Abstract

View articletitled, Origin of abnormal temperature dependence of electroluminescence from Er/O-doped Si diodes

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High-performance InAs/GaSb superlattice photodiodes for the very long wavelength infrared range

H. Mohseni; M. Razeghi; G. J. Brown; Y. S. Park

Appl. Phys. Lett. 78, 2107–2109 (2001) https://doi.org/10.1063/1.1362179

Abstract

View articletitled, High-performance InAs/GaSb superlattice photodiodes for the very long wavelength infrared range

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Low-loss polymeric optical waveguides using electron-beam direct writing

W. H. Wong; J. Zhou; E. Y. B. Pun

Appl. Phys. Lett. 78, 2110–2112 (2001) https://doi.org/10.1063/1.1361287

Abstract

View articletitled, Low-loss polymeric optical waveguides using electron-beam direct writing

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Large improvement of pumping rate in the ${He–CuCl–NiBr}_{2}$ laser system

H. Saito; Y. Shiraiwa; T. Ishikawa; K. Uno; K. Fujii

Appl. Phys. Lett. 78, 2113–2115 (2001) https://doi.org/10.1063/1.1358849

Abstract

View articletitled, Large improvement of pumping rate in the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">He–CuCl–NiBr</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> laser system

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Correlation between dark spot growth and pinhole size in organic light-emitting diodes

Shuang Fang Lim; Lin Ke; Wei Wang; Soo Jin Chua

Appl. Phys. Lett. 78, 2116–2118 (2001) https://doi.org/10.1063/1.1364658

Abstract

View articletitled, Correlation between dark spot growth and pinhole size in organic light-emitting diodes

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Reduction in surface recombination of GaInAsP microcolumns by ${CH}_{4}$ plasma irradiation

Hiroyuki Ichikawa; Kyoji Inoshita; Toshihiko Baba

Appl. Phys. Lett. 78, 2119–2121 (2001) https://doi.org/10.1063/1.1364506

Abstract

View articletitled, Reduction in surface recombination of GaInAsP microcolumns by <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CH</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math> plasma irradiation

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Near-infrared electroluminescence of polymer light-emitting diodes doped with a lissamine-sensitized ${Nd}^{3+}$ complex

L. H. Slooff; A. Polman; F. Cacialli; R. H. Friend; G. A. Hebbink; F. C. J. M. van Veggel; D. N. Reinhoudt

Appl. Phys. Lett. 78, 2122–2124 (2001) https://doi.org/10.1063/1.1359782

Abstract

View articletitled, Near-infrared electroluminescence of polymer light-emitting diodes doped with a lissamine-sensitized <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Nd</mi><mrow><mi mathvariant="normal">3+</mi></mrow></msup></math> complex

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Photosensitivity in phosphate glass doped with ${Ag}^{+}$ upon exposure to near-ultraviolet femtosecond laser pulses

Yuichi Watanabe; Gaku Namikawa; Teppei Onuki; Keishi Nishio; Toshio Tsuchiya

Appl. Phys. Lett. 78, 2125–2127 (2001) https://doi.org/10.1063/1.1361284

Abstract

View articletitled, Photosensitivity in phosphate glass doped with <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Ag</mi><mrow><mi>+</mi></mrow></msup></math> upon exposure to near-ultraviolet femtosecond laser pulses

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PLASMAS AND ELECTRICAL DISCHARGES

Hydrogen storage in aligned carbon nanotubes

Yan Chen; David T. Shaw; X. D. Bai; E. G. Wang; C. Lund; W. M. Lu; D. D. L. Chung

Appl. Phys. Lett. 78, 2128–2130 (2001) https://doi.org/10.1063/1.1341224

Abstract

View articletitled, Hydrogen storage in aligned carbon nanotubes

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Enhancement of the molecular nitrogen dissociation levels by argon dilution in surface-wave-sustained plasmas

M. Tabbal; M. Kazopoulo; T. Christidis; S. Isber

Appl. Phys. Lett. 78, 2131–2133 (2001) https://doi.org/10.1063/1.1359775

Abstract

View articletitled, Enhancement of the molecular nitrogen dissociation levels by argon dilution in surface-wave-sustained plasmas

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Electron energy loss near-edge structures of cubic ${Si}_{3} N_{4}$

Isao Tanaka; T. Mizoguchi; T. Sekine; Hongliang He; K. Kimoto; T. Kobayashi; Shang-Di Mo; W. Y. Ching

Appl. Phys. Lett. 78, 2134–2136 (2001) https://doi.org/10.1063/1.1360232

Abstract

View articletitled, Electron energy loss near-edge structures of cubic <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math>

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Compositional dependence of the strain-free optical band gap in ${In}_{x} {Ga}_{1−x} N$ layers

S. Pereira; M. R. Correia; T. Monteiro; E. Pereira; E. Alves; A. D. Sequeira; N. Franco

Appl. Phys. Lett. 78, 2137–2139 (2001) https://doi.org/10.1063/1.1358368

Abstract

View articletitled, Compositional dependence of the strain-free optical band gap in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">N</mi></math> layers

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Semimagnetic self-organized ${Cd}_{1−x} {Mn}_{x} Te$ quantum dots generated by postgrowth thermal annealing

G. Prechtl; W. Heiss; S. Mackowski; E. Janik

Appl. Phys. Lett. 78, 2140–2142 (2001) https://doi.org/10.1063/1.1362199

Abstract

View articletitled, Semimagnetic self-organized <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cd</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Mn</mi><mrow><mi>x</mi></mrow></msub><mi mathvariant="normal" xmlns="">Te</mi></math> quantum dots generated by postgrowth thermal annealing

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Near infra-red radiation squeezing through 20 nm voids in obliquely deposited metal films

G. B. Smith; A. K. M. Hossain; A. Gentle

Appl. Phys. Lett. 78, 2143–2144 (2001) https://doi.org/10.1063/1.1359489

Abstract

View articletitled, Near infra-red radiation squeezing through 20 nm voids in obliquely deposited metal films

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Kinetics of the glass-transition and crystallization process of ${Fe}_{72−x} {Nb}_{x} {Al}_{5} {Ga}_{2} P_{11} C_{6} B_{4}$ $(x=0, 2)$ metallic glasses

N. Mitrovic; S. Roth; J. Eckert

Appl. Phys. Lett. 78, 2145–2147 (2001) https://doi.org/10.1063/1.1361099

Abstract

View articletitled, Kinetics of the glass-transition and crystallization process of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mtext>72−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Nb</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mn>5</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">P</mi><mrow><mn>11</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mn>6</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">B</mi><mrow><mn>4</mn></mrow></msub></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(x=0, 2)</mtext></math> metallic glasses

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Photoluminescence of nanostructured ${PbTiO}_{3}$ processed by high-energy mechanical milling

E. R. Leite; L. P. S. Santos; N. L. V. Carreño; E. Longo; C. A. Paskocimas; J. A. Varela; F. Lanciotti, Jr.; C. E. M. Campos; P. S. Pizani

Appl. Phys. Lett. 78, 2148–2150 (2001) https://doi.org/10.1063/1.1362200

Abstract

View articletitled, Photoluminescence of nanostructured <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">PbTiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> processed by high-energy mechanical milling

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Argon inclusion in sputtered films and the effect of the gas on molybdenum field emitter arrays

Babu R. Chalamala; Robert H. Reuss

Appl. Phys. Lett. 78, 2151–2153 (2001) https://doi.org/10.1063/1.1361281

Abstract

View articletitled, Argon inclusion in sputtered films and the effect of the gas on molybdenum field emitter arrays

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Multiplet structures of tetrahedrally coordinated ${Cr}^{4+}$ and ${Cr}^{5+}$ in $Y_{3} {Al}_{5} O_{12}$

Takugo Ishii; Kazuyoshi Ogasawara; Hirohiko Adachi; Isao Tanaka

Appl. Phys. Lett. 78, 2154–2156 (2001) https://doi.org/10.1063/1.1364655

Abstract

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Transmission electron microscopy studies of the effect of A-site cation size mismatch and disorder on charge ordering behavior in $({La}_{1−x} Y_{x})_{0.5} ({Ca}_{1−y} {Sr}_{y})_{0.5} {MnO}_{3}$

Y. Q. Wang; X. F. Duan; Z. H. Wang; B. G. Shen

Appl. Phys. Lett. 78, 2157–2159 (2001) https://doi.org/10.1063/1.1364505

Abstract

View articletitled, Transmission electron microscopy studies of the effect of A-site cation size mismatch and disorder on charge ordering behavior in <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Y</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi>)</mi><mrow><mtext>0.5</mtext></mrow></msub><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mtext>1−y</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mi>y</mi></mrow></msub><msub xmlns=""><mi>)</mi><mrow><mtext>0.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math>

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Si single-electron transistors with in-plane point-contact metal gates

T. H. Wang; H. W. Li; J. M. Zhou

Appl. Phys. Lett. 78, 2160–2162 (2001) https://doi.org/10.1063/1.1359777

Abstract

View articletitled, Si single-electron transistors with in-plane point-contact metal gates

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Radiative recombination from InP quantum dots on (100) GaP

F. Hatami; W. T. Masselink; L. Schrottke

Appl. Phys. Lett. 78, 2163–2165 (2001) https://doi.org/10.1063/1.1361277

Abstract

View articletitled, Radiative recombination from InP quantum dots on (100) GaP

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Effects of Mg doping on photoelectrical properties of hydrogenated GaN films grown at 380 °C

Shigeru Yagi; Seiji Suzuki

Appl. Phys. Lett. 78, 2166–2168 (2001) https://doi.org/10.1063/1.1350900

Abstract

View articletitled, Effects of Mg doping on photoelectrical properties of hydrogenated GaN films grown at 380 °C

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Mechanism of radio-frequency current collapse in GaN–AlGaN field-effect transistors

A. Tarakji; G. Simin; N. Ilinskaya; X. Hu; A. Kumar; A. Koudymov; J. Yang; M. Asif Khan; M. S. Shur; R. Gaska

Appl. Phys. Lett. 78, 2169–2171 (2001) https://doi.org/10.1063/1.1363694

Abstract

View articletitled, Mechanism of radio-frequency current collapse in GaN–AlGaN field-effect transistors

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Low-noise GaN Schottky diodes on Si(111) by molecular beam epitaxy

Peter W. Deelman; Robert N. Bicknell-Tassius; Sergey Nikishin; Vladimir Kuryatkov; Henryk Temkin

Appl. Phys. Lett. 78, 2172–2174 (2001) https://doi.org/10.1063/1.1357448

Abstract

View articletitled, Low-noise GaN Schottky diodes on Si(111) by molecular beam epitaxy

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Commensurability effects in lateral surface-doped superlattices

R. A. Deutschmann; C. Stocken; W. Wegscheider; M. Bichler; G. Abstreiter

Appl. Phys. Lett. 78, 2175–2177 (2001) https://doi.org/10.1063/1.1362283

Abstract

View articletitled, Commensurability effects in lateral surface-doped superlattices

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Deep centers in a free-standing GaN layer

Z.-Q. Fang; D. C. Look; P. Visconti; D.-F. Wang; C.-Z. Lu; F. Yun; H. Morkoç; S. S. Park; K. Y. Lee

Appl. Phys. Lett. 78, 2178–2180 (2001) https://doi.org/10.1063/1.1361273

Abstract

View articletitled, Deep centers in a free-standing GaN layer

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MAGNETISM AND SUPERCONDUCTIVITY

Effects of oxide seed and cap layers on magnetic properties of a synthetic spin valve

Tsann Lin; Daniele Mauri

Appl. Phys. Lett. 78, 2181–2183 (2001) https://doi.org/10.1063/1.1361103

Abstract

View articletitled, Effects of oxide seed and cap layers on magnetic properties of a synthetic spin valve

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Spin filtering in a magnetic–electric barrier structure

G. Papp; F. M. Peeters

Appl. Phys. Lett. 78, 2184–2186 (2001) https://doi.org/10.1063/1.1360224

Abstract

View articletitled, Spin filtering in a magnetic–electric barrier structure

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Synthesis, self-assembly, and magnetic behavior of a two-dimensional superlattice of single-crystal ε-Co nanoparticles

Victor F. Puntes; Kannan M. Krishnan; Paul Alivisatos

Appl. Phys. Lett. 78, 2187–2189 (2001) https://doi.org/10.1063/1.1362333

Abstract

View articletitled, Synthesis, self-assembly, and magnetic behavior of a two-dimensional superlattice of single-crystal ε-Co nanoparticles

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Magnetic recording medium with improved temporal stability

P. J. Jensen

Appl. Phys. Lett. 78, 2190–2192 (2001) https://doi.org/10.1063/1.1362282

Abstract

View articletitled, Magnetic recording medium with improved temporal stability

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DIELECTRICS AND FERROELECTRICITY

All-fiber phase modulator based on lead zirconate titanate thin-film coating

D. M. Costantini; H. G. Limberger; R. P. Salathé; C. A. P. Muller; P. Muralt; N. Setter

Appl. Phys. Lett. 78, 2193–2195 (2001) https://doi.org/10.1063/1.1364508

Abstract

View articletitled, All-fiber phase modulator based on lead zirconate titanate thin-film coating

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NANOSCALE SCIENCE AND DESIGN

Thermal annealing effect on the intersublevel transitions in InAs quantum dots

Y. Berhane; M. O. Manasreh; H. Yang; G. J. Salamo

Appl. Phys. Lett. 78, 2196–2198 (2001) https://doi.org/10.1063/1.1363693

Abstract

View articletitled, Thermal annealing effect on the intersublevel transitions in InAs quantum dots

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Unambiguous observation of subband transitions from longitudinal valley and oblique valleys in IV–VI multiple quantum wells

H. Z. Wu; N. Dai; M. B. Johnson; P. J. McCann; Z. S. Shi

Appl. Phys. Lett. 78, 2199–2201 (2001) https://doi.org/10.1063/1.1361104

Abstract

View articletitled, Unambiguous observation of subband transitions from longitudinal valley and oblique valleys in IV–VI multiple quantum wells

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Scattering (stochastic) recoupling of a coupled ten-stripe AlGaAs–GaAs–InGaAs quantum-well heterostructure laser

D. A. Kellogg; N. Holonyak, Jr.

Appl. Phys. Lett. 78, 2202–2204 (2001) https://doi.org/10.1063/1.1363691

Abstract

View articletitled, Scattering (stochastic) recoupling of a coupled ten-stripe AlGaAs–GaAs–InGaAs quantum-well heterostructure laser

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Fabrication of nanoperiodic surface structures by controlled etching of dislocations in bicrystals

Rikard A. Wind; Martin J. Murtagh; Fang Mei; Yu Wang; Melissa A. Hines; Stephen L. Sass

Appl. Phys. Lett. 78, 2205–2207 (2001) https://doi.org/10.1063/1.1362330

Abstract

View articletitled, Fabrication of nanoperiodic surface structures by controlled etching of dislocations in bicrystals

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High-efficiency nickel phase zone plates with 20 nm minimum outermost zone width

M. Peuker

Appl. Phys. Lett. 78, 2208–2210 (2001) https://doi.org/10.1063/1.1361285

Abstract

View articletitled, High-efficiency nickel phase zone plates with 20 nm minimum outermost zone width

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Bright blue electroluminescence from an InGaN/GaN multiquantum-well diode on Si(111): Impact of an AlGaN/GaN multilayer

A. Dadgar; J. Christen; T. Riemann; S. Richter; J. Bläsing; A. Diez; A. Krost; A. Alam; M. Heuken

Appl. Phys. Lett. 78, 2211–2213 (2001) https://doi.org/10.1063/1.1362327

Abstract

View articletitled, Bright blue electroluminescence from an InGaN/GaN multiquantum-well diode on Si(111): Impact of an AlGaN/GaN multilayer

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Diameter-controlled synthesis of single-crystal silicon nanowires

Yi Cui; Lincoln J. Lauhon; Mark S. Gudiksen; Jianfang Wang; Charles M. Lieber

Appl. Phys. Lett. 78, 2214–2216 (2001) https://doi.org/10.1063/1.1363692

Abstract

View articletitled, Diameter-controlled synthesis of single-crystal silicon nanowires

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Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration

Z. Pan; L. H. Li; Y. W. Lin; B. Q. Sun; D. S. Jiang; W. K. Ge

Appl. Phys. Lett. 78, 2217–2219 (2001) https://doi.org/10.1063/1.1362335

Abstract

View articletitled, Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration

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Effect of phosphorus on Ge/Si(001) island formation

T. I. Kamins; D. A. A. Ohlberg; R. Stanley Williams

Appl. Phys. Lett. 78, 2220–2222 (2001) https://doi.org/10.1063/1.1361096

Abstract

View articletitled, Effect of phosphorus on Ge/Si(001) island formation

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Evolution of nanoscale texture in ultrathin TiN films

M. J. Williamson; D. N. Dunn; R. Hull; S. Kodambaka; I. Petrov; J. E. Greene

Appl. Phys. Lett. 78, 2223–2225 (2001) https://doi.org/10.1063/1.1360235

Abstract

View articletitled, Evolution of nanoscale texture in ultrathin TiN films

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Electron field emission from carbon nanoparticles prepared by microwave-plasma chemical-vapor deposition

J. Yu; E. G. Wang; X. D. Bai

Appl. Phys. Lett. 78, 2226–2228 (2001) https://doi.org/10.1063/1.1361286

Abstract

View articletitled, Electron field emission from carbon nanoparticles prepared by microwave-plasma chemical-vapor deposition

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DEVICE PHYSICS

Electronic sensing of vapors with organic transistors

B. Crone; A. Dodabalapur; A. Gelperin; L. Torsi; H. E. Katz; A. J. Lovinger; Z. Bao

Appl. Phys. Lett. 78, 2229–2231 (2001) https://doi.org/10.1063/1.1360785

Abstract

View articletitled, Electronic sensing of vapors with organic transistors

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Fabrication of InAs/AlSb/GaSb heterojunction bipolar transistors on ${Al}_{2} O_{3}$ substrates by wafer bonding

P. D. Moran; D. Chow; A. Hunter; T. F. Kuech

Appl. Phys. Lett. 78, 2232–2234 (2001) https://doi.org/10.1063/1.1359140

Abstract

View articletitled, Fabrication of InAs/AlSb/GaSb heterojunction bipolar transistors on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> substrates by wafer bonding

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Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors

L. McCarthy; I. Smorchkova; H. Xing; P. Fini; S. Keller; J. Speck; S. P. DenBaars; M. J. W. Rodwell; U. K. Mishra

Appl. Phys. Lett. 78, 2235–2237 (2001) https://doi.org/10.1063/1.1358358

Abstract

View articletitled, Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors

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Observation of double peak in the substrate current versus gate voltage characteristics of n-channel metal–oxide–semiconductor field effect transistors

K. G. Anil; I. Eisele; S. Mahapatra

Appl. Phys. Lett. 78, 2238–2240 (2001) https://doi.org/10.1063/1.1361279

Abstract

View articletitled, Observation of double peak in the substrate current versus gate voltage characteristics of n-channel metal–oxide–semiconductor field effect transistors

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Heterojunction wavelength-tailorable far-infrared photodetectors with response out to 70 μm

A. G. U. Perera; S. G. Matsik; B. Yaldiz; H. C. Liu; A. Shen; M. Gao; Z. R. Wasilewski; M. Buchanan

Appl. Phys. Lett. 78, 2241–2243 (2001) https://doi.org/10.1063/1.1361283

Abstract

View articletitled, Heterojunction wavelength-tailorable far-infrared photodetectors with response out to 70 μm

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${SrTiO}_{3}$ -based metal–insulator–semiconductor heterostructures

Ilaria Pallecchi; Giuseppe Grassano; Daniele Marré; Luca Pellegrino; Marina Putti; Antonio Sergio Siri

Appl. Phys. Lett. 78, 2244–2246 (2001) https://doi.org/10.1063/1.1363690

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrTiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math>-based metal–insulator–semiconductor heterostructures

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APPLIED BIOPHYSICS

Nonoptically probing near-field microscopy for the observation of biological living specimens

Yoshimasa Kawata; Manabu Murakami; Chikara Egami; Okihiro Sugihara; Naomichi Okamoto; Masaaki Tsuchimori; Osamu Watanabe; Osamu Nakamura

Appl. Phys. Lett. 78, 2247–2249 (2001) https://doi.org/10.1063/1.1350965

Abstract

View articletitled, Nonoptically probing near-field microscopy for the observation of biological living specimens

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INTERDISCIPLINARY AND GENERAL PHYSICS

Alignment of grain boundary in a Si film crystallized by a linearly polarized laser beam on a glass substrate

Susumu Horita; Y. Nakata; A. Shimoyama

Appl. Phys. Lett. 78, 2250–2252 (2001) https://doi.org/10.1063/1.1362336

Abstract

View articletitled, Alignment of grain boundary in a Si film crystallized by a linearly polarized laser beam on a glass substrate

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Vacuum electron acceleration by an intense laser

P. X. Wang; Y. K. Ho; X. Q. Yuan; Q. Kong; N. Cao; A. M. Sessler; E. Esarey; Y. Nishida

Appl. Phys. Lett. 78, 2253–2255 (2001) https://doi.org/10.1063/1.1359486

Abstract

View articletitled, Vacuum electron acceleration by an intense laser

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

APPLIED BIOPHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

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