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Volume 78, Issue 10

5 March 2001

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
PLASMAS AND ELECTRICAL DISCHARGES
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
NANOSCALE SCIENCE AND DESIGN
DEVICE PHYSICS
COMMENTS

LASERS, OPTICS, AND OPTOELECTRONICS

Optical limiting properties of phthalocyanine-fullerene derivatives

Peiwang Zhu; Peng Wang; Wenfeng Qiu; Yunqi Liu; Cheng Ye; Guangyu Fang; Yinglin Song

Appl. Phys. Lett. 78, 1319–1321 (2001) https://doi.org/10.1063/1.1352670

View articletitled, Optical limiting properties of phthalocyanine-fullerene derivatives

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Analysis of a multiple-pump Raman amplifier

M. Achtenhagen; T. G. Chang; B. Nyman; A. Hardy

Appl. Phys. Lett. 78, 1322–1324 (2001) https://doi.org/10.1063/1.1352665

View articletitled, Analysis of a multiple-pump Raman amplifier

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Directional lasing oscillation of two-dimensional organic photonic crystal lasers at several photonic band gaps

M. Notomi; H. Suzuki; T. Tamamura

Appl. Phys. Lett. 78, 1325–1327 (2001) https://doi.org/10.1063/1.1352671

View articletitled, Directional lasing oscillation of two-dimensional organic photonic crystal lasers at several photonic band gaps

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Strong coupling of exciton and photon modes in photonic crystal infiltrated with organic–inorganic layered perovskite

Kazuhiro Sumioka; Hiroyuki Nagahama; Tetsuo Tsutsui

Appl. Phys. Lett. 78, 1328–1330 (2001) https://doi.org/10.1063/1.1352048

View articletitled, Strong coupling of exciton and photon modes in photonic crystal infiltrated with organic–inorganic layered perovskite

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Planar p-on-n HgCdTe heterostructure infrared photodiodes

G. Bahir; V. Garber; D. Rosenfeld

Appl. Phys. Lett. 78, 1331–1333 (2001) https://doi.org/10.1063/1.1353843

View articletitled, Planar <em>p</em>-on-<em>n</em> HgCdTe heterostructure infrared photodiodes

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Active matrix of amorphous silicon multijunction color sensors for document imaging

F. Lemmi; M. Mulato; J. Ho; R. Lau; J. P. Lu; R. A. Street; F. Palma

Appl. Phys. Lett. 78, 1334–1336 (2001) https://doi.org/10.1063/1.1350592

View articletitled, Active matrix of amorphous silicon multijunction color sensors for document imaging

Supplementary Material

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88 °C, continuous-wave operation of apertured, intracavity contacted, 1.55 μm vertical-cavity surface-emitting lasers

S. Nakagawa; E. Hall; G. Almuneau; J. K. Kim; D. A. Buell; H. Kroemer; L. A. Coldren

Appl. Phys. Lett. 78, 1337–1339 (2001) https://doi.org/10.1063/1.1352668

View articletitled, 88 °C, continuous-wave operation of apertured, intracavity contacted, 1.55 μm vertical-cavity surface-emitting lasers

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PLASMAS AND ELECTRICAL DISCHARGES

Multistage, monolithic ceramic microdischarge device having an active length of ∼0.27 mm

B. A. Vojak; S.-J. Park; C. J. Wagner; J. G. Eden; R. Koripella; J. Burdon; F. Zenhausern; D. L. Wilcox

Appl. Phys. Lett. 78, 1340–1342 (2001) https://doi.org/10.1063/1.1352042

View articletitled, Multistage, monolithic ceramic microdischarge device having an active length of ∼0.27 mm

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

The enthalpy state of amorphous alloys in an immiscible system

J. H. He; H. W. Sheng; E. Ma

Appl. Phys. Lett. 78, 1343–1345 (2001) https://doi.org/10.1063/1.1352040

View articletitled, The enthalpy state of amorphous alloys in an immiscible system

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On the modes and loss mechanisms of a high Q mechanical oscillator

Xiao Liu; S. F. Morse; J. F. Vignola; D. M. Photiadis; A. Sarkissian; M. H. Marcus; B. H. Houston

Appl. Phys. Lett. 78, 1346–1348 (2001) https://doi.org/10.1063/1.1350599

View articletitled, On the modes and loss mechanisms of a high <em>Q</em> mechanical oscillator

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A growth method for creating arrays of atomically flat mesas on silicon

Doohan Lee; Jack M. Blakely; Todd W. Schroeder; J. R. Engstrom

Appl. Phys. Lett. 78, 1349–1351 (2001) https://doi.org/10.1063/1.1352656

View articletitled, A growth method for creating arrays of atomically flat mesas on silicon

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Influence of intermolecular distance on optical property in polydiacetylene crystalline films

T. Kondo; A. Ishii; H. Manabe; H. Munekata

Appl. Phys. Lett. 78, 1352–1354 (2001) https://doi.org/10.1063/1.1350966

View articletitled, Influence of intermolecular distance on optical property in polydiacetylene crystalline films

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Self-orientation of short single-walled carbon nanotubes deposited on graphite

Hisao Yanagi; Eriko Sawada; Ayyakkannu Manivannan; Larry A. Nagahara

Appl. Phys. Lett. 78, 1355–1357 (2001) https://doi.org/10.1063/1.1353841

View articletitled, Self-orientation of short single-walled carbon nanotubes deposited on graphite

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Oriented crystallization of GaSb on a patterned, amorphous Si substrate

S. S. Yi; P. D. Moran; X. Zhang; F. Cerrina; J. Carter; H. I. Smith; T. F. Kuech

Appl. Phys. Lett. 78, 1358–1360 (2001) https://doi.org/10.1063/1.1352657

View articletitled, Oriented crystallization of GaSb on a patterned, amorphous Si substrate

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Room-temperature epitaxial growth of ${CeO}_{2} (001)$ thin films on Si(001) substrates by electron beam evaporation

T. Ami; Y. Ishida; N. Nagasawa; A. Machida; M. Suzuki

Appl. Phys. Lett. 78, 1361–1363 (2001) https://doi.org/10.1063/1.1351849

View articletitled, Room-temperature epitaxial growth of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CeO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">(001)</mi></math></span> thin films on Si(001) substrates by electron beam evaporation

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Molecular-beam epitaxy of (Al)GaAsN using ammonia as the nitrogen source

Koji Takahashi; Yoshitaka Tomomura; Hiroaki Ikeda; Hidenori Kawanishi

Appl. Phys. Lett. 78, 1364–1366 (2001) https://doi.org/10.1063/1.1352043

View articletitled, Molecular-beam epitaxy of (Al)GaAsN using ammonia as the nitrogen source

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Electron beam prepatterning for site control of self-assembled quantum dots

M. Borgstrom; J. Johansson; L. Samuelson; W. Seifert

Appl. Phys. Lett. 78, 1367–1369 (2001) https://doi.org/10.1063/1.1351528

View articletitled, Electron beam prepatterning for site control of self-assembled quantum dots

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Roughening transition and solid-state diffusion in short-period ${InP/In}_{0.53} {Ga}_{0.47} As$ superlattices

M. Gerling; A. Gustafsson; D. H. Rich; D. Ritter; D. Gershoni

Appl. Phys. Lett. 78, 1370–1372 (2001) https://doi.org/10.1063/1.1353839

View articletitled, Roughening transition and solid-state diffusion in short-period <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">InP/In</mi><mrow><mi mathvariant="normal">0.53</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi mathvariant="normal">0.47</mi></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math></span> superlattices

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Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperatures

S. O. Kucheyev; J. S. Williams; J. Zou; C. Jagadish; G. Li

Appl. Phys. Lett. 78, 1373–1375 (2001) https://doi.org/10.1063/1.1347010

View articletitled, Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperatures

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Sb enhancement of lateral superlattice formation in GaInP

C. M. Fetzer; R. T. Lee; S. W. Jun; G. B. Stringfellow; S. M. Lee; T. Y. Seong

Appl. Phys. Lett. 78, 1376–1378 (2001) https://doi.org/10.1063/1.1350424

View articletitled, Sb enhancement of lateral superlattice formation in GaInP

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Infrared extinction coefficient of ${LiNbO}_{3}$ at temperatures to 1150 °C: Semiconductor behavior of a metal oxide at high temperature

C. Marı́n; A. G. Ostrogorsky; G. Foulon; D. Jundt; S. Motakef

Appl. Phys. Lett. 78, 1379–1381 (2001) https://doi.org/10.1063/1.1352695

View articletitled, Infrared extinction coefficient of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LiNbO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span> at temperatures to 1150 °C: Semiconductor behavior of a metal oxide at high temperature

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Wavelength control from 1.25 to $1.4 μ m$ in ${In}_{x} {Ga}_{1−x} As$ quantum dot structures grown by metal organic chemical vapor deposition

A. Passaseo; G. Maruccio; M. De Vittorio; R. Rinaldi; R. Cingolani; M. Lomascolo

Appl. Phys. Lett. 78, 1382–1384 (2001) https://doi.org/10.1063/1.1352698

View articletitled, Wavelength control from 1.25 to <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">1.4 μ</mtext><mi mathvariant="normal" xmlns="">m</mi></math></span> in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math></span> quantum dot structures grown by metal organic chemical vapor deposition

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Synthesis of superhard cubic ${BC}_{2} N$

Vladimir L. Solozhenko; Denis Andrault; Guillaume Fiquet; Mohamed Mezouar; David C. Rubie

Appl. Phys. Lett. 78, 1385–1387 (2001) https://doi.org/10.1063/1.1337623

View articletitled, Synthesis of superhard cubic <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BC</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">N</mi></math></span>

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Controlled photoluminescence in amorphous-silicon-nitride microcavities

Ali Serpengüzel; Selim Tanriseven

Appl. Phys. Lett. 78, 1388–1390 (2001) https://doi.org/10.1063/1.1347022

View articletitled, Controlled photoluminescence in amorphous-silicon-nitride microcavities

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Recombination mechanisms in GaInNAs/GaAs multiple quantum wells

A. Kaschner; T. Lüttgert; H. Born; A. Hoffmann; A. Yu. Egorov; H. Riechert

Appl. Phys. Lett. 78, 1391–1393 (2001) https://doi.org/10.1063/1.1355014

View articletitled, Recombination mechanisms in GaInNAs/GaAs multiple quantum wells

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Effect of catalyst film thickness on carbon nanotube growth by selective area chemical vapor deposition

Y. Y. Wei; Gyula Eres; V. I. Merkulov; D. H. Lowndes

Appl. Phys. Lett. 78, 1394–1396 (2001) https://doi.org/10.1063/1.1354658

View articletitled, Effect of catalyst film thickness on carbon nanotube growth by selective area chemical vapor deposition

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Enhanced reliability of electroluminescence from metal–oxide–silicon tunneling diodes by deuterium incorporation

C. W. Liu; C.-H. Lin; M. H. Lee; S. T. Chang; Y.-H. Liu; Miin-Jang Chen; Ching-Fuh Lin

Appl. Phys. Lett. 78, 1397–1399 (2001) https://doi.org/10.1063/1.1353817

View articletitled, Enhanced reliability of electroluminescence from metal–oxide–silicon tunneling diodes by deuterium incorporation

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Thermally stimulated luminescence of SrS:Cu thin films

D. C. Morton; E. W. Forsythe; S.-S. Sun; M. C. Wood; M. H. Ervin; K. Kirchner

Appl. Phys. Lett. 78, 1400–1402 (2001) https://doi.org/10.1063/1.1352667

View articletitled, Thermally stimulated luminescence of SrS:Cu thin films

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Selective growth of InAs self-assembled quantum dots on nanopatterned ${SiO}_{2} /Si$ substrate

B. H. Choi; C. M. Park; S.-H. Song; M. H. Son; S. W. Hwang; D. Ahn; E. K. Kim

Appl. Phys. Lett. 78, 1403–1405 (2001) https://doi.org/10.1063/1.1352049

View articletitled, Selective growth of InAs self-assembled quantum dots on nanopatterned <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">/Si</mi></math></span> substrate

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Molecular-beam epitaxy of conductive ${CdF}_{2}$ films on Si substrates by simultaneous Cd exposure

Toshimitsu Kobori; Kazuo Tsutsui

Appl. Phys. Lett. 78, 1406–1408 (2001) https://doi.org/10.1063/1.1351534

View articletitled, Molecular-beam epitaxy of conductive <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CdF</mi><mrow><mn>2</mn></mrow></msub></math></span> films on Si substrates by simultaneous Cd exposure

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Strain effects and atomic arrangements of 60° and 90° dislocations near the ZnTe/GaAs heterointerface

T. W. Kim; D. U. Lee; H. S. Lee; J. Y. Lee; H. L. Park

Appl. Phys. Lett. 78, 1409–1411 (2001) https://doi.org/10.1063/1.1349866

View articletitled, Strain effects and atomic arrangements of 60° and 90° dislocations near the ZnTe/GaAs heterointerface

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Domain formation in a one-dimensional superlattice

Lev G. Mourokh; Norman J. M. Horing; Anatoly Yu. Smirnov

Appl. Phys. Lett. 78, 1412–1414 (2001) https://doi.org/10.1063/1.1351843

View articletitled, Domain formation in a one-dimensional superlattice

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Schottky contacts on amorphous carbon: A more reliable approach

S. Paul; F. J. Clough

Appl. Phys. Lett. 78, 1415–1417 (2001) https://doi.org/10.1063/1.1344593

View articletitled, Schottky contacts on amorphous carbon: A more reliable approach

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Many-particle effects in type II quantum dots

L. Müller-Kirsch; R. Heitz; A. Schliwa; O. Stier; D. Bimberg; H. Kirmse; W. Neumann

Appl. Phys. Lett. 78, 1418–1420 (2001) https://doi.org/10.1063/1.1353818

View articletitled, Many-particle effects in type II quantum dots

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Simultaneous operation of two adjacent double dots in silicon

C. Single; F. E. Prins; D. P Kern

Appl. Phys. Lett. 78, 1421–1423 (2001) https://doi.org/10.1063/1.1353840

View articletitled, Simultaneous operation of two adjacent double dots in silicon

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Effective mobilities in pseudomorphic Si/SiGe/Si $p -channel$ metal-oxide-semiconductor field-effect transistors with thin silicon capping layers

M. J. Palmer; G. Braithwaite; T. J. Grasby; P. J. Phillips; M. J. Prest; E. H. C. Parker; T. E. Whall; C. P. Parry; A. M. Waite; A. G. R. Evans; S. Roy; J. R. Watling; S. Kaya; A. Asenov

Appl. Phys. Lett. 78, 1424–1426 (2001) https://doi.org/10.1063/1.1354662

View articletitled, Effective mobilities in pseudomorphic Si/SiGe/Si <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi><mi mathvariant="normal" xmlns="">-channel</mi></math></span> metal-oxide-semiconductor field-effect transistors with thin silicon capping layers

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MAGNETISM AND SUPERCONDUCTIVITY

X-ray reflectivity and nanotribological study of deposition-energy-dependent thin ${CN}_{x}$ overcoats on CoCr magnetic films

W. J. Liu; J. N. Zhou; A. Rar; J. A. Barnard

Appl. Phys. Lett. 78, 1427–1429 (2001) https://doi.org/10.1063/1.1354660

View articletitled, X-ray reflectivity and nanotribological study of deposition-energy-dependent thin <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CN</mi><mrow><mi>x</mi></mrow></msub></math></span> overcoats on CoCr magnetic films

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Spatially nonuniform local magnetization switching behavior in Co/Pd multilayer films

Sug-Bong Choe; Sung-Chul Shin

Appl. Phys. Lett. 78, 1430–1432 (2001) https://doi.org/10.1063/1.1354664

View articletitled, Spatially nonuniform local magnetization switching behavior in Co/Pd multilayer films

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Vortex channeling and the voltage–current characteristics of ${YBa}_{2} {Cu}_{3} O_{7}$ low-angle grain boundaries

M. J. Hogg; F. Kahlmann; E. J. Tarte; Z. H. Barber; J. E. Evetts

Appl. Phys. Lett. 78, 1433–1435 (2001) https://doi.org/10.1063/1.1351529

View articletitled, Vortex channeling and the voltage–current characteristics of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">YBa</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">7</mi></mrow></msub></math></span> low-angle grain boundaries

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Artificial modulation of magnetic structures on a monatomic layer scale in Co/Ru superlattices

K. Himi; K. Takanashi; S. Mitani; M. Yamaguchi; D. H. Ping; K. Hono; H. Fujimori

Appl. Phys. Lett. 78, 1436–1438 (2001) https://doi.org/10.1063/1.1348320

View articletitled, Artificial modulation of magnetic structures on a monatomic layer scale in Co/Ru superlattices

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DIELECTRICS AND FERROELECTRICITY

High-k cobalt–titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films

Tung Ming Pan; Tan Fu Lei; Tien Sheng Chao

Appl. Phys. Lett. 78, 1439–1441 (2001) https://doi.org/10.1063/1.1352044

View articletitled, High-<em>k</em> cobalt–titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films

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NANOSCALE SCIENCE AND DESIGN

Oxide nanostructures through self-assembly

S. Aggarwal; S. B. Ogale; C. S. Ganpule; S. R. Shinde; V. A. Novikov; A. P. Monga; M. R. Burr; R. Ramesh; V. Ballarotto; E. D. Williams

Appl. Phys. Lett. 78, 1442–1444 (2001) https://doi.org/10.1063/1.1352666

View articletitled, Oxide nanostructures through self-assembly

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DEVICE PHYSICS

Controlling hole injection in organic electroluminescent device by sputter-grown Cu-phthalocyanine thin films

Shin Cheul Kim; Gun Bae Lee; Myung-Woon Choi; Youngsuk Roh; Chung Nam Whang; Kwangho Jeong; Jae-Gyoung Lee; Sunwook Kim

Appl. Phys. Lett. 78, 1445–1447 (2001) https://doi.org/10.1063/1.1351842

View articletitled, Controlling hole injection in organic electroluminescent device by sputter-grown Cu-phthalocyanine thin films

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White-noise magnetization fluctuations in magnetoresistive heads

Neil Smith; Patrick Arnett

Appl. Phys. Lett. 78, 1448–1450 (2001) https://doi.org/10.1063/1.1352694

View articletitled, White-noise magnetization fluctuations in magnetoresistive heads

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COMMENTS

Comment on “Do $P_{b1}$ centers have levels in the Si band gap? Spin-dependent recombination study of the $P_{b1}$ ‘hyperfine spectrum’ ” [Appl. Phys. Lett. 76, 3771 (2000)]

A. Stesmans; V. V. Afanas’ev

Appl. Phys. Lett. 78, 1451–1452 (2001) https://doi.org/10.1063/1.1352690

View articletitled, Comment on “Do <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>P</mi><mrow><mtext>b1</mtext></mrow></msub></math></span> centers have levels in the Si band gap? Spin-dependent recombination study of the <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>P</mi><mrow><mtext>b1</mtext></mrow></msub></math></span> ‘hyperfine spectrum’ ” [Appl. Phys. Lett. <strong>76</strong>, 3771 (2000)]

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Response to “Comment on ‘Do $P_{b1}$ centers have levels in the Si band gap? Spin-dependent recombination study of the $P_{b1}$ “hyperfine spectrum” ’ ” [Appl. Phys. Lett. 78, 1451 (2001)]

Tetsuya D. Mishima; Patrick M. Lenahan; Werner Weber

Appl. Phys. Lett. 78, 1453–1454 (2001) https://doi.org/10.1063/1.1352691

View articletitled, Response to “Comment on ‘Do <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>P</mi><mrow><mtext>b1</mtext></mrow></msub></math></span> centers have levels in the Si band gap? Spin-dependent recombination study of the <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>P</mi><mrow><mtext>b1</mtext></mrow></msub></math></span> “hyperfine spectrum” ’ ” [Appl. Phys. Lett. <strong>78</strong>, 1451 (2001)]

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