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LASERS, OPTICS, AND OPTOELECTRONICS

Scanning near-field optical microscopy in the near-infrared region using light emitting cantilever probes

S. Heisig; O. Rudow; E. Oesterschulze

Appl. Phys. Lett. 77, 1071–1073 (2000) https://doi.org/10.1063/1.1289261

Abstract

View articletitled, Scanning near-field optical microscopy in the near-infrared region using light emitting cantilever probes

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Gray-track damage in potassium titanyl phosphate under a picosecond regime at 532 nm

Lionel Carrion; Jean-Pierre Girardeau-Montaut

Appl. Phys. Lett. 77, 1074–1076 (2000) https://doi.org/10.1063/1.1289501

Abstract

View articletitled, Gray-track damage in potassium titanyl phosphate under a picosecond regime at 532 nm

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Self-aligned coupled cavity GaAs/AlGaAs midinfrared quantum-cascade laser

L. Hvozdara; A. Lugstein; S. Gianordoli; W. Schrenk; G. Strasser; K. Unterrainer; E. Bertagnolli; E. Gornik

Appl. Phys. Lett. 77, 1077–1079 (2000) https://doi.org/10.1063/1.1289499

Abstract

View articletitled, Self-aligned coupled cavity GaAs/AlGaAs midinfrared quantum-cascade laser

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Narrowing of high power diode laser arrays using reflection feedback from an etalon

M. V. Romalis

Appl. Phys. Lett. 77, 1080–1081 (2000) https://doi.org/10.1063/1.1289652

Abstract

View articletitled, Narrowing of high power diode laser arrays using reflection feedback from an etalon

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Subcycle high electron acceleration by crossed laser beams

Yousef I. Salamin; Christoph H. Keitel

Appl. Phys. Lett. 77, 1082–1084 (2000) https://doi.org/10.1063/1.1289649

Abstract

View articletitled, Subcycle high electron acceleration by crossed laser beams

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Frequency domain spectroscopy of free-space terahertz radiation

Hironori Takahashi; Makoto Hosoda

Appl. Phys. Lett. 77, 1085–1087 (2000) https://doi.org/10.1063/1.1289805

Abstract

View articletitled, Frequency domain spectroscopy of free-space terahertz radiation

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Electronic distribution in superlattice quantum cascade lasers

Mariano Troccoli; Gaetano Scamarcio; Vincenzo Spagnolo; Alessandro Tredicucci; Claire Gmachl; Federico Capasso; Deborah L. Sivco; Alfred Y. Cho; Marinella Striccoli

Appl. Phys. Lett. 77, 1088–1090 (2000) https://doi.org/10.1063/1.1289798

Abstract

View articletitled, Electronic distribution in superlattice quantum cascade lasers

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2.12 μm InGaAs–InGaAlAs–InP diode lasers grown in solid-source molecular-beam epitaxy

G. K. Kuang; G. Böhm; M. Grau; G. Rösel; R. Meyer; M.-C. Amann

Appl. Phys. Lett. 77, 1091–1092 (2000) https://doi.org/10.1063/1.1289799

Abstract

View articletitled, 2.12 μm InGaAs–InGaAlAs–InP diode lasers grown in solid-source molecular-beam epitaxy

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Improved band alignment for hole injection by an interfacial layer in organic light emitting devices

L. Chkoda; C. Heske; M. Sokolowski; E. Umbach

Appl. Phys. Lett. 77, 1093–1095 (2000) https://doi.org/10.1063/1.1289804

Abstract

View articletitled, Improved band alignment for hole injection by an interfacial layer in organic light emitting devices

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PLASMAS AND ELECTRICAL DISCHARGES

Negative ion formation in the scattering of ${CF}_{3}^{+}$ from graphite

M. A. Gleeson; M. Kropholler; A. W. Kleyn

Appl. Phys. Lett. 77, 1096–1098 (2000) https://doi.org/10.1063/1.1289808

Abstract

View articletitled, Negative ion formation in the scattering of <math xmlns="http://www.w3.org/1998/Math/MathML"><msubsup xmlns=""><mi mathvariant="normal">CF</mi><mrow><mi mathvariant="normal">3</mi></mrow><mrow><mi mathvariant="normal">+</mi></mrow></msubsup></math> from graphite

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Transmittance and resistivity of semicontinuous copper films prepared by pulsed-laser deposition

S. K. So; H. H. Fong; C. F. Yeung; N. H. Cheung

Appl. Phys. Lett. 77, 1099–1101 (2000) https://doi.org/10.1063/1.1289259

Abstract

View articletitled, Transmittance and resistivity of semicontinuous copper films prepared by pulsed-laser deposition

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Nanoquasicrystallization of binary Zr–Pd metallic glasses

B. S. Murty; D. H. Ping; K. Hono

Appl. Phys. Lett. 77, 1102–1104 (2000) https://doi.org/10.1063/1.1289271

Abstract

View articletitled, Nanoquasicrystallization of binary Zr–Pd metallic glasses

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Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy

M. H. Xie; L. X. Zheng; S. H. Cheung; Y. F. Ng; Huasheng Wu; S. Y. Tong; N. Ohtani

Appl. Phys. Lett. 77, 1105–1107 (2000) https://doi.org/10.1063/1.1289266

Abstract

View articletitled, Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy

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Dispersive rotation of dipoles in amorphous media

D. J. Binks; D. P. West

Appl. Phys. Lett. 77, 1108–1110 (2000) https://doi.org/10.1063/1.1289258

Abstract

View articletitled, Dispersive rotation of dipoles in amorphous media

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Temperature dependence of the electron–hole-plasma electroluminescence from metal–oxide–silicon tunneling diodes

C. W. Liu; Miin-Jang Chen; I. C. Lin; M. H. Lee; Ching-Fuh Lin

Appl. Phys. Lett. 77, 1111–1113 (2000) https://doi.org/10.1063/1.1289491

Abstract

View articletitled, Temperature dependence of the electron–hole-plasma electroluminescence from metal–oxide–silicon tunneling diodes

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Newtonian viscosity of supercooled liquid in a ${Pd}_{40} {Ni}_{40} P_{20}$ metallic glass

Yoshihito Kawamura; Akihisa Inoue

Appl. Phys. Lett. 77, 1114–1116 (2000) https://doi.org/10.1063/1.1289502

Abstract

View articletitled, Newtonian viscosity of supercooled liquid in a <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pd</mi><mrow><mi mathvariant="normal">40</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ni</mi><mrow><mi mathvariant="normal">40</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">P</mi><mrow><mi mathvariant="normal">20</mi></mrow></msub></math> metallic glass

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Band gap engineering in amorphous ${Al}_{x} {Ga}_{1−x} N :$ Experiment and ab initio calculations

Hong Chen; Kuiying Chen; D. A. Drabold; M. E. Kordesch

Appl. Phys. Lett. 77, 1117–1119 (2000) https://doi.org/10.1063/1.1289496

Abstract

View articletitled, Band gap engineering in amorphous <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">N</mi><mi xmlns="">:</mi></math> Experiment and ab initio calculations

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Ultrafast polarized fluorescence dynamics in an organic dendrimer

O. Varnavski; G. Menkir; T. Goodson, III; P. L. Burn

Appl. Phys. Lett. 77, 1120–1122 (2000) https://doi.org/10.1063/1.1289495

Abstract

View articletitled, Ultrafast polarized fluorescence dynamics in an organic dendrimer

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Codoping characteristics of Zn with Mg in GaN

K. S. Kim; M. S. Han; G. M. Yang; C. J. Youn; H. J. Lee; H. K. Cho; J. Y. Lee

Appl. Phys. Lett. 77, 1123–1125 (2000) https://doi.org/10.1063/1.1289494

Abstract

View articletitled, Codoping characteristics of Zn with Mg in GaN

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In situ transmission electron microscopy study of dislocations in a polycrystalline Cu thin film constrained by a substrate

Gerhard Dehm; Eduard Arzt

Appl. Phys. Lett. 77, 1126–1128 (2000) https://doi.org/10.1063/1.1289488

Abstract

View articletitled, In situ transmission electron microscopy study of dislocations in a polycrystalline Cu thin film constrained by a substrate

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Dielectric function of $V_{2} O_{5}$ nanocrystalline films by spectroscopic ellipsometry: Characterization of microstructure

Maria Losurdo; Giovanni Bruno; Davide Barreca; Eugenio Tondello

Appl. Phys. Lett. 77, 1129–1131 (2000) https://doi.org/10.1063/1.1289658

Abstract

View articletitled, Dielectric function of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">V</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">5</mi></mrow></msub></math> nanocrystalline films by spectroscopic ellipsometry: Characterization of microstructure

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Sintering, structure, and mechanical properties of nanophase SiC: A molecular-dynamics and neutron scattering study

Alok Chatterjee; Rajiv K. Kalia; Aiichiro Nakano; Andrey Omeltchenko; Kenji Tsuruta; Priya Vashishta; Chun-Keung Loong; Markus Winterer; Sylke Klein

Appl. Phys. Lett. 77, 1132–1134 (2000) https://doi.org/10.1063/1.1289661

Abstract

View articletitled, Sintering, structure, and mechanical properties of nanophase SiC: A molecular-dynamics and neutron scattering study

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Huge differences between low- and high-angle twist grain boundaries: The case of ultrathin (001) Si films bonded to (001) Si wafers

J. L. Rouviere; K. Rousseau; F. Fournel; H. Moriceau

Appl. Phys. Lett. 77, 1135–1137 (2000) https://doi.org/10.1063/1.1289656

Abstract

View articletitled, Huge differences between low- and high-angle twist grain boundaries: The case of ultrathin (001) Si films bonded to (001) Si wafers

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Optical evidence of intrinsic quantum wells in the transparent conducting oxide $β- {Ga}_{2} O_{3}$

Laurent Binet; Didier Gourier

Appl. Phys. Lett. 77, 1138–1140 (2000) https://doi.org/10.1063/1.1289655

Abstract

View articletitled, Optical evidence of intrinsic quantum wells in the transparent conducting oxide <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">β-</mi><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math>

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Polyparaphenylene-based low-temperature carbons studied by transmission electron microscopy

T. Hayashi; M. Endo; M. S. Dresselhaus

Appl. Phys. Lett. 77, 1141–1143 (2000) https://doi.org/10.1063/1.1289653

Abstract

View articletitled, Polyparaphenylene-based low-temperature carbons studied by transmission electron microscopy

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Doping of covalently bound fullerene monolayers: Ag clusters on $C_{60} /Si(111)$

M. D. R. Taylor; P. Moriarty; B. N. Cotier; M. J. Butcher; P. H. Beton; V. R. Dhanak

Appl. Phys. Lett. 77, 1144–1146 (2000) https://doi.org/10.1063/1.1289797

Abstract

View articletitled, Doping of covalently bound fullerene monolayers: Ag clusters on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mi mathvariant="normal">60</mi></mrow></msub><mi mathvariant="normal" xmlns="">/Si(111)</mi></math>

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Ultrasonic investigation of ${Pd}_{39} {Ni}_{10} {Cu}_{30} P_{21}$ bulk metallic glass upon crystallization

Li Min Wang; W. H. Wang; R. J. Wang; Z. J. Zhan; D. Y. Dai; L. L. Sun; W. K. Wang

Appl. Phys. Lett. 77, 1147–1149 (2000) https://doi.org/10.1063/1.1289801

Abstract

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${Er}^{3+}$ in strong light-confining microcavity

M. Lipson; L. C. Kimerling

Appl. Phys. Lett. 77, 1150–1152 (2000) https://doi.org/10.1063/1.1289800

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Er</mi><mrow><mi mathvariant="normal">3+</mi></mrow></msup></math> in strong light-confining microcavity

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Formation of ultrafine nanostructure by crystallization of ${Zr}_{52} {Al}_{6} {Cu}_{14} {Ni}_{8} {Fe}_{20}$ metallic glass

N. Mattern; U. Kühn; J. Neuefeind; J. Eckert

Appl. Phys. Lett. 77, 1153–1154 (2000) https://doi.org/10.1063/1.1289802

Abstract

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Grain-size-dependent thermal conductivity of nanocrystalline yttria-stabilized zirconia films grown by metal-organic chemical vapor deposition

G. Soyez; J. A. Eastman; L. J. Thompson; G.-R. Bai; P. M. Baldo; A. W. McCormick; R. J. DiMelfi; A. A. Elmustafa; M. F. Tambwe; D. S. Stone

Appl. Phys. Lett. 77, 1155–1157 (2000) https://doi.org/10.1063/1.1289803

Abstract

View articletitled, Grain-size-dependent thermal conductivity of nanocrystalline yttria-stabilized zirconia films grown by metal-organic chemical vapor deposition

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Crystallization kinetics of the bulk-glass-forming ${Pd}_{43} {Ni}_{10} {Cu}_{27} P_{20}$ melt

Jan Schroers; William L. Johnson; Ralf Busch

Appl. Phys. Lett. 77, 1158–1160 (2000) https://doi.org/10.1063/1.1289033

Abstract

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Thermal wet oxidation of GaP and ${Al}_{0.4} {Ga}_{0.6} P$

J. H. Epple; K. L. Chang; G. W. Pickrell; K. Y. Cheng; K. C. Hsieh

Appl. Phys. Lett. 77, 1161–1163 (2000) https://doi.org/10.1063/1.1286871

Abstract

View articletitled, Thermal wet oxidation of GaP and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi mathvariant="normal">0.4</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi mathvariant="normal">0.6</mi></mrow></msub><mi mathvariant="normal" xmlns="">P</mi></math>

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Acceptor reactivation kinetics in heavily carbon-doped GaAs epitaxial layers

J. Mimila-Arroyo; S. W. Bland

Appl. Phys. Lett. 77, 1164–1166 (2000) https://doi.org/10.1063/1.1289268

Abstract

View articletitled, Acceptor reactivation kinetics in heavily carbon-doped GaAs epitaxial layers

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Observation of resonant tunneling through a quantized state in InP quantum dots in a double-barrier heterostructure

C. V. Reddy; V. Narayanamurti; J. H. Ryou; U. Chowdhury; R. D. Dupuis

Appl. Phys. Lett. 77, 1167–1169 (2000) https://doi.org/10.1063/1.1289264

Abstract

View articletitled, Observation of resonant tunneling through a quantized state in InP quantum dots in a double-barrier heterostructure

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Barrier-width dependence of quantum efficiencies of ${GaN/Al}_{x} {Ga}_{1−x} N$ multiple quantum wells

Eun-joo Shin; J. Li; J. Y. Lin; H. X. Jiang

Appl. Phys. Lett. 77, 1170–1172 (2000) https://doi.org/10.1063/1.1289262

Abstract

View articletitled, Barrier-width dependence of quantum efficiencies of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">GaN/Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">N</mi></math> multiple quantum wells

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Electrical measurements on $p^{+} {–p}^{-} {–p}^{+}$ homoepitaxial diamond capacitors

Takashi Inushima; Takahiro Matsushita; Rinat F. Mamin; Seishirou Ohya; Hiromu Shiomi

Appl. Phys. Lett. 77, 1173–1175 (2000) https://doi.org/10.1063/1.1289270

Abstract

View articletitled, Electrical measurements on <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi>p</mi><mrow><mi>+</mi></mrow></msup><msup xmlns=""><mi>–p</mi><mrow><mi>−</mi></mrow></msup><msup xmlns=""><mi>–p</mi><mrow><mi>+</mi></mrow></msup></math> homoepitaxial diamond capacitors

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Growth temperature dependence of transport properties of InAs epilayers grown on GaP

Victor Souw; V. Gopal; E.-H. Chen; E. P. Kvam; M. McElfresh; J. M. Woodall

Appl. Phys. Lett. 77, 1176–1178 (2000) https://doi.org/10.1063/1.1289269

Abstract

View articletitled, Growth temperature dependence of transport properties of InAs epilayers grown on GaP

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Single-electron tunneling study of two-dimensional gold clusters

Bing Wang; Xudong Xiao; Xianxiang Huang; Ping Sheng; J. G. Hou

Appl. Phys. Lett. 77, 1179–1181 (2000) https://doi.org/10.1063/1.1289500

Abstract

View articletitled, Single-electron tunneling study of two-dimensional gold clusters

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Quantum confinement in germanium nanocrystals

Y. M. Niquet; G. Allan; C. Delerue; M. Lannoo

Appl. Phys. Lett. 77, 1182–1184 (2000) https://doi.org/10.1063/1.1289659

Abstract

View articletitled, Quantum confinement in germanium nanocrystals

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Hot hole relaxation dynamics in p-GaN

Hong Ye; G. W. Wicks; P. M. Fauchet

Appl. Phys. Lett. 77, 1185–1187 (2000) https://doi.org/10.1063/1.1289651

Abstract

View articletitled, Hot hole relaxation dynamics in p-GaN

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The effect of back channel hydrogen plasma treatment on the electrical characteristics of amorphous thin film transistors

S. G. Kang; S. C. Bae; S. Y. Choi

Appl. Phys. Lett. 77, 1188–1190 (2000) https://doi.org/10.1063/1.1289657

Abstract

View articletitled, The effect of back channel hydrogen plasma treatment on the electrical characteristics of amorphous thin film transistors

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MAGNETISM AND SUPERCONDUCTIVITY

Enhanced blocking temperature in NiO spin valves: Role of cubic spinel ferrite layer between pinned layer and NiO

R. F. C. Farrow; M. J. Carey; R. F. Marks; P. M. Rice; David J. Smith

Appl. Phys. Lett. 77, 1191–1193 (2000) https://doi.org/10.1063/1.1289660

Abstract

View articletitled, Enhanced blocking temperature in NiO spin valves: Role of cubic spinel ferrite layer between pinned layer and NiO

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Magnetic properties of ${Co}^{II}$ mesoclusters

Michi Sato; Syozo Takada; Shigemi Kohiki; Tomohiro Babasaki; Hiroyuki Deguchi; Masaoki Oku; Masanori Mitome

Appl. Phys. Lett. 77, 1194–1196 (2000) https://doi.org/10.1063/1.1289654

Abstract

View articletitled, Magnetic properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Co</mi><mrow><mi mathvariant="normal">II</mi></mrow></msup></math> mesoclusters

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Procedure for preparing epitaxial Tl-2201 films on single crystal ${LaAlO}_{3}$

H. Q. Chen; L.-G. Johansson; Z. G. Ivanov

Appl. Phys. Lett. 77, 1197–1199 (2000) https://doi.org/10.1063/1.1289065

Abstract

View articletitled, Procedure for preparing epitaxial Tl-2201 films on single crystal <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LaAlO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math>

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DIELECTRICS AND FERROELECTRICITY

Microstructure and dielectric properties of ${Ba}_{1−x} {Sr}_{x} {TiO}_{3}$ films grown on ${LaAlO}_{3}$ substrates

Y. Gim; T. Hudson; Y. Fan; C. Kwon; A. T. Findikoglu; B. J. Gibbons; B. H. Park; Q. X. Jia

Appl. Phys. Lett. 77, 1200–1202 (2000) https://doi.org/10.1063/1.1289272

Abstract

View articletitled, Microstructure and dielectric properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ba</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mn>3</mn></mrow></msub></math> films grown on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LaAlO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> substrates

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Dielectric and ferroelectric properties of compositionally graded ${(Pb,La)TiO}_{3}$ thin films on ${Pt/Ti/SiO}_{2} /Si$ substrates

Dinghua Bao; Nobuyasu Mizutani; Xi Yao; Liangying Zhang

Appl. Phys. Lett. 77, 1203–1205 (2000) https://doi.org/10.1063/1.1289260

Abstract

View articletitled, Dielectric and ferroelectric properties of compositionally graded <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">(Pb,La)TiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> thin films on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pt/Ti/SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">/Si</mi></math> substrates

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Electrical domain fixing of photorefractive index gratings in ${(K}_{0.5} {Na}_{0.5})_{0.2} {(Sr}_{0.75} {Ba}_{0.25})_{0.9} {Nb}_{2} O_{6}$ crystals

Xiaonong Shen; Jianhua Zhao; Ruibo Wang; Zhenxiang Cheng; Shujun Zhang; Huanchu Chen

Appl. Phys. Lett. 77, 1206–1208 (2000) https://doi.org/10.1063/1.1289492

Abstract

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Microstructure of ${(Ba, Sr)TiO}_{3}$ thin films deposited by physical vapor deposition at 480 °C and its influence on the dielectric properties

Matthew C. Werner; Indrajit Banerjee; Paul C. McIntyre; Noriaki Tani; Michio Tanimura

Appl. Phys. Lett. 77, 1209–1211 (2000) https://doi.org/10.1063/1.1288155

Abstract

View articletitled, Microstructure of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">(Ba, Sr)TiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> thin films deposited by physical vapor deposition at 480 °C and its influence on the dielectric properties

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DEVICE PHYSICS

Influence of oxygen on band alignment at the organic/aluminum interface

R. I. R. Blyth; S. A. Sardar; F. P. Netzer; M. G. Ramsey

Appl. Phys. Lett. 77, 1212–1214 (2000) https://doi.org/10.1063/1.1289497

Abstract

View articletitled, Influence of oxygen on band alignment at the organic/aluminum interface

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Improvement of charge trapping by hydrogen post-oxidation annealing in gate oxide of 4H–SiC metal–oxide–semiconductor capacitors

Won-ju Cho; Ryoji Kosugi; Kenji Fukuda; Kazuo Arai; Seiji Suzuki

Appl. Phys. Lett. 77, 1215–1217 (2000) https://doi.org/10.1063/1.1289806

Abstract

View articletitled, Improvement of charge trapping by hydrogen post-oxidation annealing in gate oxide of 4H–SiC metal–oxide–semiconductor capacitors

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APPLIED BIOPHYSICS

Stable integration of isolated cell membrane patches in a nanomachined aperture

N. Fertig; A. Tilke; R. H. Blick; J. P. Kotthaus; J. C. Behrends; G. ten Bruggencate

Appl. Phys. Lett. 77, 1218–1220 (2000) https://doi.org/10.1063/1.1289490

Abstract

View articletitled, Stable integration of isolated cell membrane patches in a nanomachined aperture

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INTERDISCIPLINARY AND GENERAL PHYSICS

Field emission from boron-doped polycrystalline diamond film at the nanometer level within grains

I. Andrienko; A. Cimmino; D. Hoxley; S. Prawer; R. Kalish

Appl. Phys. Lett. 77, 1221–1223 (2000) https://doi.org/10.1063/1.1289498

Abstract

View articletitled, Field emission from boron-doped polycrystalline diamond film at the nanometer level within grains

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Room-temperature negative differential resistance in nanoscale molecular junctions

J. Chen; W. Wang; M. A. Reed; A. M. Rawlett; D. W. Price; J. M. Tour

Appl. Phys. Lett. 77, 1224–1226 (2000) https://doi.org/10.1063/1.1289650

Abstract

View articletitled, Room-temperature negative differential resistance in nanoscale molecular junctions

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Bias-assisted photoelectrochemical etching of $p- GaN$ at 300 K

J. E. Borton; C. Cai; M. I. Nathan; P. Chow; J. M. Van Hove; A. Wowchak; H. Morkoc

Appl. Phys. Lett. 77, 1227–1229 (2000) https://doi.org/10.1063/1.1289807

Abstract

View articletitled, Bias-assisted photoelectrochemical etching of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p-</mi><mi mathvariant="normal" xmlns="">GaN</mi></math> at 300 K

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Automatic feature selection for unsupervised image segmentation

W. Al-Nuaimy; Y. Huang; A. Eriksen; V. T. Nguyen

Appl. Phys. Lett. 77, 1230–1232 (2000) https://doi.org/10.1063/1.1289267

Abstract

View articletitled, Automatic feature selection for unsupervised image segmentation

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LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

DEVICE PHYSICS

APPLIED BIOPHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

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