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LASERS, OPTICS, AND OPTOELECTRONICS

Green upconversion luminescence in ${Er}^{3+} {:BaTiO}_{3}$ films

H. X. Zhang; C. H. Kam; Y. Zhou; X. Q. Han; S. Buddhudu; Q. Xiang; Y. L. Lam; Y. C. Chan

Appl. Phys. Lett. 77, 609–611 (2000) https://doi.org/10.1063/1.127060

Abstract

View articletitled, Green upconversion luminescence in <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Er</mi><mrow><mi mathvariant="normal">3+</mi></mrow></msup><msub xmlns=""><mi mathvariant="normal">:BaTiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> films

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Depolarization by high aperture focusing

K. Bahlmann; S. W. Hell

Appl. Phys. Lett. 77, 612–614 (2000) https://doi.org/10.1063/1.127061

Abstract

View articletitled, Depolarization by high aperture focusing

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2.79 μm erbium laser with lead–lanthanum zirconate titanate ceramics electro-optic Q-switching output coupler

Maris Ozolinsh; Hans J. Eichler

Appl. Phys. Lett. 77, 615–617 (2000) https://doi.org/10.1063/1.127062

Abstract

View articletitled, 2.79 μm erbium laser with lead–lanthanum zirconate titanate ceramics electro-optic Q-switching output coupler

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Estimation of interwell terahertz gain by photon-assisted tunneling measurement in triple-barrier resonant tunneling diodes

M. Asada; Y. Oguma; N. Sashinaka

Appl. Phys. Lett. 77, 618–620 (2000) https://doi.org/10.1063/1.127063

Abstract

View articletitled, Estimation of interwell terahertz gain by photon-assisted tunneling measurement in triple-barrier resonant tunneling diodes

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Artifact-free near-field optical imaging by apertureless microscopy

M. Labardi; S. Patanè; M. Allegrini

Appl. Phys. Lett. 77, 621–623 (2000) https://doi.org/10.1063/1.127064

Abstract

View articletitled, Artifact-free near-field optical imaging by apertureless microscopy

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Enhanced degradation resistance of quantum dot lasers to radiation damage

P. G. Piva; R. D. Goldberg; I. V. Mitchell; D. Labrie; R. Leon; S. Charbonneau; Z. R. Wasilewski; S. Fafard

Appl. Phys. Lett. 77, 624–626 (2000) https://doi.org/10.1063/1.127065

Abstract

View articletitled, Enhanced degradation resistance of quantum dot lasers to radiation damage

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High-quality phase conjugation even in a highly transient regime of stimulated Brillouin scattering

B. Králiková; J. Skála; P. Straka; H. Turčičová

Appl. Phys. Lett. 77, 627–629 (2000) https://doi.org/10.1063/1.127066

Abstract

View articletitled, High-quality phase conjugation even in a highly transient regime of stimulated Brillouin scattering

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Gain in 1.3 μm materials: InGaNAs and InGaPAs semiconductor quantum-well lasers

J. Hader; S. W. Koch; J. V. Moloney; E. P. O’Reilly

Appl. Phys. Lett. 77, 630–632 (2000) https://doi.org/10.1063/1.127067

Abstract

View articletitled, Gain in 1.3 μm materials: InGaNAs and InGaPAs semiconductor quantum-well lasers

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Experimental observation of the mobility edge in a waveguide with correlated disorder

U. Kuhl; F. M. Izrailev; A. A. Krokhin; H.-J. Stöckmann

Appl. Phys. Lett. 77, 633–635 (2000) https://doi.org/10.1063/1.127068

Abstract

View articletitled, Experimental observation of the mobility edge in a waveguide with correlated disorder

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Dependence of crystallographic tilt and defect distribution on mask material in epitaxial lateral overgrown GaN layers

S. Tomiya; K. Funato; T. Asatsuma; T. Hino; S. Kijima; T. Asano; M. Ikeda

Appl. Phys. Lett. 77, 636–638 (2000) https://doi.org/10.1063/1.127069

Abstract

View articletitled, Dependence of crystallographic tilt and defect distribution on mask material in epitaxial lateral overgrown GaN layers

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Quantum confinement energies in zinc-blende III–V and group IV semiconductors

G. Allan; Y. M. Niquet; C. Delerue

Appl. Phys. Lett. 77, 639–641 (2000) https://doi.org/10.1063/1.127070

Abstract

View articletitled, Quantum confinement energies in zinc-blende III–V and group IV semiconductors

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Double-hump diffusion profiles of copper and nickel in germanium wafers yielding vacancy-related information

A. Giese; N. A. Stolwijk; H. Bracht

Appl. Phys. Lett. 77, 642–644 (2000) https://doi.org/10.1063/1.127071

Abstract

View articletitled, Double-hump diffusion profiles of copper and nickel in germanium wafers yielding vacancy-related information

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Kinetic oscillations of red photoluminescence from nanocrystalline ${Si/SiO}_{2}$ films

Xiaochun Wu; Alexander M. Bittner; Klaus Kern; Ch. Eggs; S. Veprek

Appl. Phys. Lett. 77, 645–647 (2000) https://doi.org/10.1063/1.127072

Abstract

View articletitled, Kinetic oscillations of red photoluminescence from nanocrystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si/SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> films

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Ultrafast intersubband relaxation (⩽150 fs) in AlGaN/GaN multiple quantum wells

Norio Iizuka; Kei Kaneko; Nobuo Suzuki; Takashi Asano; Susumu Noda; Osamu Wada

Appl. Phys. Lett. 77, 648–650 (2000) https://doi.org/10.1063/1.127073

Abstract

View articletitled, Ultrafast intersubband relaxation (⩽150 fs) in AlGaN/GaN multiple quantum wells

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Semiconductor wafer bonding via liquid capillarity

Z. L. Liau

Appl. Phys. Lett. 77, 651–653 (2000) https://doi.org/10.1063/1.127074

Abstract

View articletitled, Semiconductor wafer bonding via liquid capillarity

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Initial growth of heteroepitaxial 3C–SiC on Si using energetic species

Nobuteru Tsubouchi; Akiyoshi Chayahara; Atsushi Kinomura; Yuji Horino

Appl. Phys. Lett. 77, 654–656 (2000) https://doi.org/10.1063/1.127075

Abstract

View articletitled, Initial growth of heteroepitaxial 3C–SiC on Si using energetic species

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Self-induced light polarization rotation in azobenzene-containing polymers

L. Nikolova; L. Nedelchev; T. Todorov; Tz. Petrova; N. Tomova; V. Dragostinova; P. S. Ramanujam; S. Hvilsted

Appl. Phys. Lett. 77, 657–659 (2000) https://doi.org/10.1063/1.127076

Abstract

View articletitled, Self-induced light polarization rotation in azobenzene-containing polymers

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Optical properties, spectral narrowing of photoluminescence and blue electroluminescence of poly(phenylene pyridine) derivatives

A. Fujii; R. Ootake; T. Fujisawa; M. Ozaki; Y. Ohmori; Tong Laga; K. Yoshino; H.-F. Lu; H. S. O. Chan; S.-C. Ng

Appl. Phys. Lett. 77, 660–662 (2000) https://doi.org/10.1063/1.127077

Abstract

View articletitled, Optical properties, spectral narrowing of photoluminescence and blue electroluminescence of poly(phenylene pyridine) derivatives

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Structural anisotropy of magnetically aligned single wall carbon nanotube films

B. W. Smith; Z. Benes; D. E. Luzzi; J. E. Fischer; D. A. Walters; M. J. Casavant; J. Schmidt; R. E. Smalley

Appl. Phys. Lett. 77, 663–665 (2000) https://doi.org/10.1063/1.127078

Abstract

View articletitled, Structural anisotropy of magnetically aligned single wall carbon nanotube films

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Electrical and thermal transport properties of magnetically aligned single wall carbon nanotube films

J. Hone; M. C. Llaguno; N. M. Nemes; A. T. Johnson; J. E. Fischer; D. A. Walters; M. J. Casavant; J. Schmidt; R. E. Smalley

Appl. Phys. Lett. 77, 666–668 (2000) https://doi.org/10.1063/1.127079

Abstract

View articletitled, Electrical and thermal transport properties of magnetically aligned single wall carbon nanotube films

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Effect of surface steps on the microstructure of lateral composition modulation

D. M. Follstaedt; J. L. Reno; E. D. Jones; S. R. Lee; A. G. Norman; H. R. Moutinho; A. Mascarenhas; R. D. Twesten

Appl. Phys. Lett. 77, 669–671 (2000) https://doi.org/10.1063/1.127080

Abstract

View articletitled, Effect of surface steps on the microstructure of lateral composition modulation

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Ultraviolet-blue electroluminescence from ${Gd}_{3} {Ga}_{5} O_{12} :Ag$

Xiulai Xu; Zheng Xu; Yanbing Hou; Yanmei Su; Xurong Xu; Xiaowei Wang; Wusheng Tong

Appl. Phys. Lett. 77, 672–674 (2000) https://doi.org/10.1063/1.127081

Abstract

View articletitled, Ultraviolet-blue electroluminescence from <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Gd</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi mathvariant="normal">5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">12</mi></mrow></msub><mi mathvariant="normal" xmlns="">:Ag</mi></math>

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Photoconductive properties of polysilane copolymers with pendant siloxane groups

Kimihiro Matsukawa; Toshiyuki Tamai; Hiroshi Inoue

Appl. Phys. Lett. 77, 675–677 (2000) https://doi.org/10.1063/1.127082

Abstract

View articletitled, Photoconductive properties of polysilane copolymers with pendant siloxane groups

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Photo- and cathodoluminescence characteristics of blue-light-emitting epitaxial ${Sr}_{2} {CeO}_{4}$ thin-film phosphors

Yong Eui Lee; David P. Norton; John D. Budai; Philip D. Rack; Michael D. Potter

Appl. Phys. Lett. 77, 678–680 (2000) https://doi.org/10.1063/1.127083

Abstract

View articletitled, Photo- and cathodoluminescence characteristics of blue-light-emitting epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">CeO</mi><mrow><mn>4</mn></mrow></msub></math> thin-film phosphors

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Time–temperature–transformation diagram and microstructures of bulk glass forming ${Pd}_{40} {Cu}_{30} {Ni}_{10} P_{20}$

Jörg F. Löffler; Jan Schroers; William L. Johnson

Appl. Phys. Lett. 77, 681–683 (2000) https://doi.org/10.1063/1.127084

Abstract

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Underwater shock measurements using a ruby pressure gauge

G. I. Pangilinan; T. P. Russell; M. R. Baer; J. Namkung; P. Chambers

Appl. Phys. Lett. 77, 684–686 (2000) https://doi.org/10.1063/1.127085

Abstract

View articletitled, Underwater shock measurements using a ruby pressure gauge

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

X-ray photoelectron spectroscopy study of ${(NH}_{4})_{2} S_{x}$ -treated Mg-doped GaN layers

Yow-Jon Lin; Chang-Da Tsai; Yen-Tang Lyu; Ching-Ting Lee

Appl. Phys. Lett. 77, 687–689 (2000) https://doi.org/10.1063/1.127086

Abstract

View articletitled, X-ray photoelectron spectroscopy study of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">(NH</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">)</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">S</mi><mrow><mi>x</mi></mrow></msub></math>-treated Mg-doped GaN layers

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Identification of vacancy charge states in diffusion of arsenic in germanium

E. Vainonen-Ahlgren; T. Ahlgren; J. Likonen; S. Lehto; J. Keinonen; W. Li; J. Haapamaa

Appl. Phys. Lett. 77, 690–692 (2000) https://doi.org/10.1063/1.127087

Abstract

View articletitled, Identification of vacancy charge states in diffusion of arsenic in germanium

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The current–voltage dependence of nominally undoped thin conjugated polymer films

José A. Freire; M. G. E. da Luz; Dongge Ma; I. A. Hümmelgen

Appl. Phys. Lett. 77, 693–695 (2000) https://doi.org/10.1063/1.127088

Abstract

View articletitled, The current–voltage dependence of nominally undoped thin conjugated polymer films

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Investigation of deep levels in rapid thermally annealed ${SiO}_{2}$ -capped $n- GaAs$ grown by metal-organic chemical vapor deposition

P. N. K. Deenapanray; H. H. Tan; C. Jagadish; F. D. Auret

Appl. Phys. Lett. 77, 696–698 (2000) https://doi.org/10.1063/1.127089

Abstract

View articletitled, Investigation of deep levels in rapid thermally annealed <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math>-capped <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n-</mi><mi mathvariant="normal" xmlns="">GaAs</mi></math> grown by metal-organic chemical vapor deposition

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Luminescence spectroscopy of GaN in the high-temperature regime from room temperature to 900 °C

A. P. Young; L. J. Brillson

Appl. Phys. Lett. 77, 699–701 (2000) https://doi.org/10.1063/1.127090

Abstract

View articletitled, Luminescence spectroscopy of GaN in the high-temperature regime from room temperature to 900 °C

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Observation of EL2 and additional deep levels at low temperature in an AlGaAs/GaAs multiple-quantum-well structure

Y. F. Zhang; Q. Zhuo; M. H. Zhang; Q. Huang; J. M. Zhou

Appl. Phys. Lett. 77, 702–704 (2000) https://doi.org/10.1063/1.127091

Abstract

View articletitled, Observation of EL2 and additional deep levels at low temperature in an AlGaAs/GaAs multiple-quantum-well structure

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Thermoelectric power factor in superlattice systems

D. A. Broido; T. L. Reinecke

Appl. Phys. Lett. 77, 705–707 (2000) https://doi.org/10.1063/1.127092

Abstract

View articletitled, Thermoelectric power factor in superlattice systems

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Current-voltage curves of gold quantum point contacts revisited

K. Hansen; S. K. Nielsen; M. Brandbyge; E. Lægsgaard; I. Stensgaard; F. Besenbacher

Appl. Phys. Lett. 77, 708–710 (2000) https://doi.org/10.1063/1.127093

Abstract

View articletitled, Current-voltage curves of gold quantum point contacts revisited

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MAGNETISM AND SUPERCONDUCTIVITY

Magneto-optical effects from nanophase α-Fe and ${Fe}_{3} O_{4}$ precipitates formed in yttrium-stabilized ${ZrO}_{2}$ by ion implantation and annealing

S. Honda; F. A. Modine; A. Meldrum; J. D. Budai; T. E. Haynes; L. A. Boatner

Appl. Phys. Lett. 77, 711–713 (2000) https://doi.org/10.1063/1.127094

Abstract

View articletitled, Magneto-optical effects from nanophase α-Fe and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mn>3</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>4</mn></mrow></msub></math> precipitates formed in yttrium-stabilized <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">ZrO</mi><mrow><mn>2</mn></mrow></msub></math> by ion implantation and annealing

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Near-room-temperature tunneling magnetoresistance in a trilayer ${La}_{0.67} {Sr}_{0.33} {MnO}_{3} {/La}_{0.85} {Sr}_{0.15} {MnO}_{3} {/La}_{0.67} {Sr}_{0.33} {MnO}_{3}$ device

H. Q. Yin; J.-S. Zhou; J. B. Goodenough

Appl. Phys. Lett. 77, 714–716 (2000) https://doi.org/10.1063/1.127095

Abstract

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Noise imaging in stroboscopic ultrafast microscopy

M. R. Freeman; R. W. Hunt; G. M. Steeves

Appl. Phys. Lett. 77, 717–719 (2000) https://doi.org/10.1063/1.127096

Abstract

View articletitled, Noise imaging in stroboscopic ultrafast microscopy

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Spin polarization of tunneling current from ferromagnet/ ${Al}_{2} O_{3}$ interfaces using copper-doped aluminum superconducting films

D. J. Monsma; S. S. P. Parkin

Appl. Phys. Lett. 77, 720–722 (2000) https://doi.org/10.1063/1.127097

Abstract

View articletitled, Spin polarization of tunneling current from ferromagnet/<math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> interfaces using copper-doped aluminum superconducting films

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Giant magnetoresistance of the ${La}_{1−x} {Ag}_{x} {MnO}_{3}$ polycrystalline inhomogeneous granular system

T. Tang; Q. Q. Cao; K. M. Gu; H. Y. Xu; S. Y. Zhang; Y. W. Du

Appl. Phys. Lett. 77, 723–725 (2000) https://doi.org/10.1063/1.127098

Abstract

View articletitled, Giant magnetoresistance of the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ag</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> polycrystalline inhomogeneous granular system

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Atomic-scale analysis of CoFe/Cu and CoFe/NiFe interfaces

D. J. Larson; P. H. Clifton; N. Tabat; A. Cerezo; A. K. Petford-Long; R. L. Martens; T. F. Kelly

Appl. Phys. Lett. 77, 726–728 (2000) https://doi.org/10.1063/1.127099

Abstract

View articletitled, Atomic-scale analysis of CoFe/Cu and CoFe/NiFe interfaces

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DIELECTRICS AND FERROELECTRICITY

Significant reduction of leakage current in the ${TiO}_{2} /Si$ structure by the insertion of the ${CeO}_{2}$ intermediate layer

Geunhag Bae; Youngil Song; Donggeun Jung; Yonghan Roh

Appl. Phys. Lett. 77, 729–731 (2000) https://doi.org/10.1063/1.127100

Abstract

View articletitled, Significant reduction of leakage current in the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">/Si</mi></math> structure by the insertion of the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CeO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> intermediate layer

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Cluster polarization of ${Cd}_{2} {Nb}_{2} O_{7}$ compound

Chen Ang; L. E. Cross; Ruyan Guo; A. S. Bhalla

Appl. Phys. Lett. 77, 732–734 (2000) https://doi.org/10.1063/1.127101

Abstract

View articletitled, Cluster polarization of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cd</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Nb</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">7</mi></mrow></msub></math> compound

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Dynamics of resonance phenomenon and negative capacitances in the dielectric response of materials

Jean-Claude M’Peko

Appl. Phys. Lett. 77, 735–737 (2000) https://doi.org/10.1063/1.127102

Abstract

View articletitled, Dynamics of resonance phenomenon and negative capacitances in the dielectric response of materials

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DEVICE PHYSICS

Experimental demonstration of a leadless quantum-dot cellular automata cell

Islamshah Amlani; Alexei O. Orlov; Ravi K. Kummamuru; Gary H. Bernstein; Craig S. Lent; Gregory L. Snider

Appl. Phys. Lett. 77, 738–740 (2000) https://doi.org/10.1063/1.127103

Abstract

View articletitled, Experimental demonstration of a leadless quantum-dot cellular automata cell

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GaAs/InGaAs quantum well infrared photodetector with a cutoff wavelength at 35 μm

A. G. U. Perera; S. G. Matsik; H. C. Liu; M. Gao; M. Buchanan; W. J. Schaff; W. Yeo

Appl. Phys. Lett. 77, 741–743 (2000) https://doi.org/10.1063/1.127104

Abstract

View articletitled, GaAs/InGaAs quantum well infrared photodetector with a cutoff wavelength at 35 μm

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Single-electron detector and counter

N. J. Stone; H. Ahmed

Appl. Phys. Lett. 77, 744–746 (2000) https://doi.org/10.1063/1.127105

Abstract

View articletitled, Single-electron detector and counter

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Selective excitation and photoinduced bleaching of defects in InAlGaAs/GaAs high-power diode lasers

J. W. Tomm; A. Bärwolff; T. Elsaesser; J. Luft

Appl. Phys. Lett. 77, 747–749 (2000) https://doi.org/10.1063/1.127106

Abstract

View articletitled, Selective excitation and photoinduced bleaching of defects in InAlGaAs/GaAs high-power diode lasers

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Dangling-bond defect state creation in microcrystalline silicon thin-film transistors

R. B. Wehrspohn; M. J. Powell; S. C. Deane; I. D. French; P. Roca i Cabarrocas

Appl. Phys. Lett. 77, 750–752 (2000) https://doi.org/10.1063/1.127107

Abstract

View articletitled, Dangling-bond defect state creation in microcrystalline silicon thin-film transistors

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GaN/W/W-oxide metal base transistor with very large current gain and power gain

K. Mochizuki; K. Uesugi; P. M. Asbeck; J. Gotoh; T. Mishima; K. Hirata; H. Oda

Appl. Phys. Lett. 77, 753–755 (2000) https://doi.org/10.1063/1.127108

Abstract

View articletitled, GaN/W/W-oxide metal base transistor with very large current gain and power gain

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Tailoring the colossal magnetoresistivity: ${La}_{0.7} {(Pb}_{0.63} {Sr}_{0.37})_{0.3} {MnO}_{3}$ thin-film uncooled bolometer

Alvydas Lisauskas; S. I. Khartsev; Alex Grishin

Appl. Phys. Lett. 77, 756–758 (2000) https://doi.org/10.1063/1.127109

Abstract

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INTERDISCIPLINARY AND GENERAL PHYSICS

Simultaneous bimodal surface acoustic-wave velocity measurement by scanning acoustic force microscopy

G. Behme; T. Hesjedal

Appl. Phys. Lett. 77, 759–761 (2000) https://doi.org/10.1063/1.127110

Abstract

View articletitled, Simultaneous bimodal surface acoustic-wave velocity measurement by scanning acoustic force microscopy

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ERRATA

Erratum: “Hall cross size scaling and its application to measurements on nanometer-size iron particle arrays” [Appl. Phys. Lett. 76, 3283 (2000)]

S. Wirth; S. von Molnár

Appl. Phys. Lett. 77, 762 (2000) https://doi.org/10.1063/1.127111

View articletitled, Erratum: “Hall cross size scaling and its application to measurements on nanometer-size iron particle arrays” [Appl. Phys. Lett. 76, 3283 (2000)]

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Erratum: “Quasimagnetic clusters in icosahedral Al–Pd–Mn system” [Appl. Phys. Lett. 77, 280 (2000)]

Shigeki Nimori; An Pang Tsai

Appl. Phys. Lett. 77, 762 (2000) https://doi.org/10.1063/1.127112

View articletitled, Erratum: “Quasimagnetic clusters in icosahedral Al–Pd–Mn system” [Appl. Phys. Lett. 77, 280 (2000)]

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

DEVICE PHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

ERRATA

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