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Volume 77, Issue 2

10 July 2000

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
PLASMAS AND ELECTRICAL DISCHARGES
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
DEVICE PHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS
ERRATA

LASERS, OPTICS, AND OPTOELECTRONICS

${Si}_{1−x} {Ge}_{x} / Si$ resonant-cavity-enhanced photodetectors with a silicon-on-oxide reflector operating near 1.3 μm

Cheng Li; Qinqing Yang; Hongjie Wang; Jialian Zhu; Liping Luo; Jinzhong Yu; Qiming Wang; Yongkang Li; Junming Zhou; Chenglu Lin

Appl. Phys. Lett. 77, 157–159 (2000) https://doi.org/10.1063/1.126909

View articletitled, <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi>x</mi></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">Si</mi></math></span> resonant-cavity-enhanced photodetectors with a silicon-on-oxide reflector operating near 1.3 μm

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Highly efficient blue-green emission from organic light-emitting diodes using dibenzochrysene derivatives

Shizuo Tokito; Koji Noda; Hisayoshi Fujikawa; Yasunori Taga; Makoto Kimura; Kou Shimada; Yasuhiko Sawaki

Appl. Phys. Lett. 77, 160–162 (2000) https://doi.org/10.1063/1.126910

View articletitled, Highly efficient blue-green emission from organic light-emitting diodes using dibenzochrysene derivatives

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Modal gain and internal optical mode loss of a quantum dot laser

E. Herrmann; P. M. Smowton; H. D. Summers; J. D. Thomson; M. Hopkinson

Appl. Phys. Lett. 77, 163–165 (2000) https://doi.org/10.1063/1.126911

View articletitled, Modal gain and internal optical mode loss of a quantum dot laser

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Molecular alignment in submicron patterned polymer matrix using nanoimprint lithography

Jian Wang; Xiaoyun Sun; Lei Chen; Lei Zhuang; Stephen Y. Chou

Appl. Phys. Lett. 77, 166–168 (2000) https://doi.org/10.1063/1.126912

View articletitled, Molecular alignment in submicron patterned polymer matrix using nanoimprint lithography

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Monolithic active mode locking of quantum cascade lasers

Roberto Paiella; Federico Capasso; Claire Gmachl; Harold Y. Hwang; Deborah L. Sivco; Albert L. Hutchinson; Alfred Y. Cho; H. C. Liu

Appl. Phys. Lett. 77, 169–171 (2000) https://doi.org/10.1063/1.126913

View articletitled, Monolithic active mode locking of quantum cascade lasers

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Temperature characteristics of bipolar cascade lasers

S. G. Patterson; E. K. Lau; K. P. Pipe; R. J. Ram

Appl. Phys. Lett. 77, 172–174 (2000) https://doi.org/10.1063/1.126914

View articletitled, Temperature characteristics of bipolar cascade lasers

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Room-temperature operation at 333 nm of ${Al}_{0.03} {Ga}_{0.97} {N/Al}_{0.25} {Ga}_{0.75} N$ quantum-well light-emitting diodes with Mg-doped superlattice layers

A. Kinoshita; H. Hirayama; M. Ainoya; Y. Aoyagi; A. Hirata

Appl. Phys. Lett. 77, 175–177 (2000) https://doi.org/10.1063/1.126915

View articletitled, Room-temperature operation at 333 nm of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi mathvariant="normal">0.03</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi mathvariant="normal">0.97</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">N/Al</mi><mrow><mi mathvariant="normal">0.25</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi mathvariant="normal">0.75</mi></mrow></msub><mi mathvariant="normal" xmlns="">N</mi></math></span> quantum-well light-emitting diodes with Mg-doped superlattice layers

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Heavy photon dispersions in photonic crystal waveguides

V. N. Astratov; R. M. Stevenson; I. S. Culshaw; D. M. Whittaker; M. S. Skolnick; T. F. Krauss; R. M. De La Rue

Appl. Phys. Lett. 77, 178–180 (2000) https://doi.org/10.1063/1.126916

View articletitled, Heavy photon dispersions in photonic crystal waveguides

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Second-harmonic spectroscopy of bulk boron-doped Si(001)

D. Lim; M. C. Downer; J. G. Ekerdt

Appl. Phys. Lett. 77, 181–183 (2000) https://doi.org/10.1063/1.126917

View articletitled, Second-harmonic spectroscopy of bulk boron-doped Si(001)

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Laser emission from quantum dots in microdisk structures

P. Michler; A. Kiraz; Lidong Zhang; C. Becher; E. Hu; A. Imamoglu

Appl. Phys. Lett. 77, 184–186 (2000) https://doi.org/10.1063/1.126918

View articletitled, Laser emission from quantum dots in microdisk structures

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Green II–VI light emitting diodes with long lifetime on InP substrate

W. Faschinger; J. Nürnberger

Appl. Phys. Lett. 77, 187–189 (2000) https://doi.org/10.1063/1.126919

View articletitled, Green II–VI light emitting diodes with long lifetime on InP substrate

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Strong enhancement of second-order response coefficients in tellurium containing ${Ag–III–VI}_{2}$ compounds

Sergey N. Rashkeev; Walter R. L. Lambrecht

Appl. Phys. Lett. 77, 190–192 (2000) https://doi.org/10.1063/1.126920

View articletitled, Strong enhancement of second-order response coefficients in tellurium containing <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ag–III–VI</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math></span> compounds

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Photonic band gaps and flat band edges in periodically textured metallic microcavities

M. G. Salt; W. C. Tan; W. L. Barnes

Appl. Phys. Lett. 77, 193–195 (2000) https://doi.org/10.1063/1.126921

View articletitled, Photonic band gaps and flat band edges in periodically textured metallic microcavities

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PLASMAS AND ELECTRICAL DISCHARGES

In situ observation of nucleation and subsequent growth of clusters in silane radio frequency discharges

Kazunori Koga; Yasuhiro Matsuoka; Kenichi Tanaka; Masaharu Shiratani; Yukio Watanabe

Appl. Phys. Lett. 77, 196–198 (2000) https://doi.org/10.1063/1.126922

View articletitled, <em>In situ</em> observation of nucleation and subsequent growth of clusters in silane radio frequency discharges

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Flexible microdischarge arrays: Metal/polymer devices

S.-J. Park; C. J. Wagner; C. M. Herring; J. G. Eden

Appl. Phys. Lett. 77, 199–201 (2000) https://doi.org/10.1063/1.126923

View articletitled, Flexible microdischarge arrays: Metal/polymer devices

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Quantitative evaluation of growth-induced residual stress in InP epitaxial micromechanical structures

N. Chitica; M. Strassner; J. Daleiden

Appl. Phys. Lett. 77, 202–204 (2000) https://doi.org/10.1063/1.126924

View articletitled, Quantitative evaluation of growth-induced residual stress in InP epitaxial micromechanical structures

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Improvement of the interface quality during thermal oxidation of ${Al}_{0.98} {Ga}_{0.02} As$ layers due to the presence of low-temperature-grown GaAs

J. C. Ferrer; Z. Liliental-Weber; H. Reese; Y. J. Chiu; E. Hu

Appl. Phys. Lett. 77, 205–207 (2000) https://doi.org/10.1063/1.126925

View articletitled, Improvement of the interface quality during thermal oxidation of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi mathvariant="normal">0.98</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi mathvariant="normal">0.02</mi></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math></span> layers due to the presence of low-temperature-grown GaAs

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A technique to form a porous silicon layer with no backside contact by alternating current electrochemical process

A. El-Bahar; Y. Nemirovsky

Appl. Phys. Lett. 77, 208–210 (2000) https://doi.org/10.1063/1.126926

View articletitled, A technique to form a porous silicon layer with no backside contact by alternating current electrochemical process

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Decay dynamics of visible luminescence in amorphous silicon nanoparticles

Yoshihiko Kanemitsu; Yunosuke Fukunishi; Takashi Kushida

Appl. Phys. Lett. 77, 211–213 (2000) https://doi.org/10.1063/1.126927

View articletitled, Decay dynamics of visible luminescence in amorphous silicon nanoparticles

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Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy

Z. Pan; L. H. Li; W. Zhang; Y. W. Lin; R. H. Wu

Appl. Phys. Lett. 77, 214–216 (2000) https://doi.org/10.1063/1.126928

View articletitled, Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy

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Drastic increase of the density of Ge islands by capping with a thin Si layer

N. Usami; M. Miura; Y. Ito; Y. Araki; Y. Shiraki

Appl. Phys. Lett. 77, 217–219 (2000) https://doi.org/10.1063/1.126929

View articletitled, Drastic increase of the density of Ge islands by capping with a thin Si layer

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Reoxidation effects on the chemical bonding states of nitrogen accumulated at the oxynitride/silicon interface

Yoshinao Miura; Haruhiko Ono; Koichi Ando

Appl. Phys. Lett. 77, 220–222 (2000) https://doi.org/10.1063/1.126930

View articletitled, Reoxidation effects on the chemical bonding states of nitrogen accumulated at the oxynitride/silicon interface

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Configurations of misfit dislocations at interfaces of lattice-matched ${Ga}_{0.5} {In}_{0.5} P/GaAs$ heterostructures

Y. Q. Wang; Z. L. Wang; T. Brown; A. Brown; G. May

Appl. Phys. Lett. 77, 223–225 (2000) https://doi.org/10.1063/1.126931

View articletitled, Configurations of misfit dislocations at interfaces of lattice-matched <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi mathvariant="normal">0.5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi mathvariant="normal">0.5</mi></mrow></msub><mi mathvariant="normal" xmlns="">P/GaAs</mi></math></span> heterostructures

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Ion-beam synthesis of epitaxial silicon carbide in nitrogen-implanted diamond

V. Heera; F. Fontaine; W. Skorupa; B. Pécz; Á. Barna

Appl. Phys. Lett. 77, 226–228 (2000) https://doi.org/10.1063/1.126932

View articletitled, Ion-beam synthesis of epitaxial silicon carbide in nitrogen-implanted diamond

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Confinement of phonons in InGaAs/InP superlattices

H. K. Shin; D. J. Lockwood; P. J. Poole

Appl. Phys. Lett. 77, 229–231 (2000) https://doi.org/10.1063/1.126933

View articletitled, Confinement of phonons in InGaAs/InP superlattices

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Vacancies in SiGe: Jahn–Teller distortion and spin effects

J. Lento; M. Pesola; J.-L. Mozos; R. M. Nieminen

Appl. Phys. Lett. 77, 232–234 (2000) https://doi.org/10.1063/1.126934

View articletitled, Vacancies in SiGe: Jahn–Teller distortion and spin effects

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Low-loss one-dimensional metallodielectric photonic crystals fabricated by metallic insertions in a multilayer dielectric structure

Yong-Hong Ye; Georges Bader; Vo-Van Truong

Appl. Phys. Lett. 77, 235–237 (2000) https://doi.org/10.1063/1.126935

View articletitled, Low-loss one-dimensional metallodielectric photonic crystals fabricated by metallic insertions in a multilayer dielectric structure

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Electron energy-loss spectrometry on lithiated graphite

A. Hightower; C. C. Ahn; B. Fultz; P. Rez

Appl. Phys. Lett. 77, 238–240 (2000) https://doi.org/10.1063/1.126936

View articletitled, Electron energy-loss spectrometry on lithiated graphite

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Dominant iron gettering mechanism in ${p/p}^{+}$ silicon wafers

Wen Lin; J. L. Benton; R. Pinacho; D. A. Ramappa; W. Henley

Appl. Phys. Lett. 77, 241–243 (2000) https://doi.org/10.1063/1.126937

View articletitled, Dominant iron gettering mechanism in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi>p/p</mi><mrow><mi>+</mi></mrow></msup></math></span> silicon wafers

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Single-phase hexagonal GaN grown on AlAs/GaAs(001)

Mitsuru Funato; Teruki Ishido; Atsushi Hamaguchi; Shizuo Fujita; Shigeo Fujita

Appl. Phys. Lett. 77, 244–246 (2000) https://doi.org/10.1063/1.126938

View articletitled, Single-phase hexagonal GaN grown on AlAs/GaAs(001)

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Superlattice-like stacking fault and phase separation of ${In}_{x} {Ga}_{1−x} N$ grown on sapphire substrate by metalorganic chemical vapor deposition

H. K. Cho; J. Y. Lee; K. S. Kim; G. M. Yang

Appl. Phys. Lett. 77, 247–249 (2000) https://doi.org/10.1063/1.126939

View articletitled, Superlattice-like stacking fault and phase separation of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">N</mi></math></span> grown on sapphire substrate by metalorganic chemical vapor deposition

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

J. P. Ibbetson; P. T. Fini; K. D. Ness; S. P. DenBaars; J. S. Speck; U. K. Mishra

Appl. Phys. Lett. 77, 250–252 (2000) https://doi.org/10.1063/1.126940

View articletitled, Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

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Interplay between segregation, roughness, and local strains in the growth of ${Ga}_{0.75} {In}_{0.25} P$ alloy

X. Wallart; C. Priester; D. Deresmes; F. Mollot

Appl. Phys. Lett. 77, 253–255 (2000) https://doi.org/10.1063/1.126941

View articletitled, Interplay between segregation, roughness, and local strains in the growth of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi mathvariant="normal">0.75</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi mathvariant="normal">0.25</mi></mrow></msub><mi mathvariant="normal" xmlns="">P</mi></math></span> alloy

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Electrical properties of rapid thermal oxides on ${Si}_{1−x−y} {Ge}_{x} C_{y}$ films

L. K. Bera; W. K. Choi; W. Feng; C. Y. Yang; J. Mi

Appl. Phys. Lett. 77, 256–258 (2000) https://doi.org/10.1063/1.126942

View articletitled, Electrical properties of rapid thermal oxides on <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>1−x−y</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mi>y</mi></mrow></msub></math></span> films

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Temperature variation of nonradiative carrier recombination processes in high-quality ${CuGaSe}_{2}$ thin films grown by molecular beam epitaxy

Kenji Yoshino; Daisuke Maruoka; Tetsuo Ikari; Paul J. Fons; Shigeru Niki; Akimasa Yamada

Appl. Phys. Lett. 77, 259–261 (2000) https://doi.org/10.1063/1.126943

View articletitled, Temperature variation of nonradiative carrier recombination processes in high-quality <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CuGaSe</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math></span> thin films grown by molecular beam epitaxy

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Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes

P. G. Eliseev; H. Li; A. Stintz; G. T. Liu; T. C. Newell; K. J. Malloy; L. F. Lester

Appl. Phys. Lett. 77, 262–264 (2000) https://doi.org/10.1063/1.126944

View articletitled, Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes

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Structure variation of intersubband electron–acoustic phonon scattering rate in coupled quantum wells

K. Požela; S. B. Naran; J.-P. Leburton; J. N. Heyman

Appl. Phys. Lett. 77, 265–267 (2000) https://doi.org/10.1063/1.126945

View articletitled, Structure variation of intersubband electron–acoustic phonon scattering rate in coupled quantum wells

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Study of the crystalline quality of exfoliated surfaces in hydrogen-implanted silicon

M. B. H. Breese; L. C. Alves; T. Hoechbauer; M. Nastasi

Appl. Phys. Lett. 77, 268–270 (2000) https://doi.org/10.1063/1.126946

View articletitled, Study of the crystalline quality of exfoliated surfaces in hydrogen-implanted silicon

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Minority carrier lifetime degradation in carbon-doped base of InGaP/GaAs heterojunction bipolar transistors grown by low-pressure metalorganic chemical vapor deposition

Q. Yang; D. S. Scott; T. Chung; G. E. Stillman

Appl. Phys. Lett. 77, 271–273 (2000) https://doi.org/10.1063/1.126947

View articletitled, Minority carrier lifetime degradation in carbon-doped base of InGaP/GaAs heterojunction bipolar transistors grown by low-pressure metalorganic chemical vapor deposition

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Evaluation of Schottky contact parameters in metal–semiconductor–metal photodiode structures

S. Averine; Y. C. Chan; Y. L. Lam

Appl. Phys. Lett. 77, 274–276 (2000) https://doi.org/10.1063/1.126948

View articletitled, Evaluation of Schottky contact parameters in metal–semiconductor–metal photodiode structures

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MAGNETISM AND SUPERCONDUCTIVITY

Edge pinning effect in single- and three-layer patterns

A. F. Popkov; L. L. Savchenko; N. V. Vorotnikova; S. Tehrani; J. Shi

Appl. Phys. Lett. 77, 277–279 (2000) https://doi.org/10.1063/1.126949

View articletitled, Edge pinning effect in single- and three-layer patterns

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Quasimagnetic clusters in icosahedral Al–Pd–Mn system

Shigeki Nimori; An Pang Tsai

Appl. Phys. Lett. 77, 280–282 (2000) https://doi.org/10.1063/1.126950

View articletitled, Quasimagnetic clusters in icosahedral Al–Pd–Mn system

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Fabrication of high-magnetoresistance tunnel junctions using ${Co}_{75} {Fe}_{25}$ ferromagnetic electrodes

Xiu-Feng Han; Mikihiko Oogane; Hitoshi Kubota; Yasuo Ando; Terunobu Miyazaki

Appl. Phys. Lett. 77, 283–285 (2000) https://doi.org/10.1063/1.126951

View articletitled, Fabrication of high-magnetoresistance tunnel junctions using <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Co</mi><mrow><mi mathvariant="normal">75</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mi mathvariant="normal">25</mi></mrow></msub></math></span> ferromagnetic electrodes

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Uniaxial anisotropy and switching behavior in epitaxial ${CrO}_{2}$ films

F. Y. Yang; C. L. Chien; E. F. Ferrari; X. W. Li; Gang Xiao; A. Gupta

Appl. Phys. Lett. 77, 286–288 (2000) https://doi.org/10.1063/1.126952

View articletitled, Uniaxial anisotropy and switching behavior in epitaxial <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CrO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math></span> films

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DIELECTRICS AND FERROELECTRICITY

Mg-doped ${Ba}_{0.6} {Sr}_{0.4} {TiO}_{3}$ thin films for tunable microwave applications

P. C. Joshi; M. W. Cole

Appl. Phys. Lett. 77, 289–291 (2000) https://doi.org/10.1063/1.126953

View articletitled, Mg-doped <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ba</mi><mrow><mtext>0.6</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mtext>0.4</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mn>3</mn></mrow></msub></math></span> thin films for tunable microwave applications

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Role of 90° domains in lead zirconate titanate thin films

C. S. Ganpule; V. Nagarajan; H. Li; A. S. Ogale; D. E. Steinhauer; S. Aggarwal; E. Williams; R. Ramesh; P. De Wolf

Appl. Phys. Lett. 77, 292–294 (2000) https://doi.org/10.1063/1.126954

View articletitled, Role of 90° domains in lead zirconate titanate thin films

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DEVICE PHYSICS

Experimental demonstration of clocked single-electron switching in quantum-dot cellular automata

Alexei O. Orlov; Islamshah Amlani; Ravi K. Kummamuru; Rajagopal Ramasubramaniam; Geza Toth; Craig S. Lent; Gary H. Bernstein; Gregory L. Snider

Appl. Phys. Lett. 77, 295–297 (2000) https://doi.org/10.1063/1.126955

View articletitled, Experimental demonstration of clocked single-electron switching in quantum-dot cellular automata

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Scheme for the fabrication of ultrashort channel metal-oxide-semiconductor field-effect transistors

J. Appenzeller; R. Martel; P. Solomon; K. Chan; Ph. Avouris; J. Knoch; J. Benedict; M. Tanner; S. Thomas; K. L. Wang; J. A. del Alamo

Appl. Phys. Lett. 77, 298–300 (2000) https://doi.org/10.1063/1.126956

View articletitled, Scheme for the fabrication of ultrashort channel metal-oxide-semiconductor field-effect transistors

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INTERDISCIPLINARY AND GENERAL PHYSICS

Nanometer-scale resolution of a chloromethylated calixarene negative resist in electron-beam lithography: Dependence on the number of phenolic residues

T. Sakamoto; S. Manako; J. Fujita; Y. Ochiai; T. Baba; H. Yamamoto; T. Teshima

Appl. Phys. Lett. 77, 301–303 (2000) https://doi.org/10.1063/1.126957

View articletitled, Nanometer-scale resolution of a chloromethylated calixarene negative resist in electron-beam lithography: Dependence on the number of phenolic residues

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Dynamically stable growth of strained-layer superlattices

L. E. Shilkrot; D. J. Srolovitz; J. Tersoff

Appl. Phys. Lett. 77, 304–306 (2000) https://doi.org/10.1063/1.126958

View articletitled, Dynamically stable growth of strained-layer superlattices

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Spatially selective materials deposition by hydrogen-assisted laser-induced transfer

D. Toet; P. M. Smith; T. W. Sigmon; Michael O. Thompson

Appl. Phys. Lett. 77, 307–309 (2000) https://doi.org/10.1063/1.126959

View articletitled, Spatially selective materials deposition by hydrogen-assisted laser-induced transfer

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ERRATA

Erratum: “Mechanically induced Si layer transfer in hydrogen implanted Si wafers” [Appl. Phys. Lett. 76, 2370 (2000)]

K. Henttinen; I. Suni; S. S. Lau

Appl. Phys. Lett. 77, 310 (2000) https://doi.org/10.1063/1.126960

View articletitled, Erratum: “Mechanically induced Si layer transfer in hydrogen implanted Si wafers” [Appl. Phys. Lett. <strong>76</strong>, 2370 (2000)]

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S. Tian, K. Jadeja, et al.

Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices

Joachim Würfl, Tomás Palacios, et al.

Online ISSN 1077-3118
Print ISSN 0003-6951

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