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Volume 77, Issue 19

6 November 2000

Applied Physics Letters Cover Image for Volume 77, Issue 19

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
PLASMAS AND ELECTRICAL DISCHARGES
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
DEVICE PHYSICS
APPLIED BIOPHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS
COMMENTS

LASERS, OPTICS, AND OPTOELECTRONICS

Near-infrared Yablonovite-like photonic crystals by focused-ion-beam etching of macroporous silicon

A. Chelnokov; K. Wang; S. Rowson; P. Garoche; J.-M. Lourtioz

Appl. Phys. Lett. 77, 2943–2945 (2000) https://doi.org/10.1063/1.1322630

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Second-harmonic and sum-frequency imaging of organic nanocrystals with photon scanning tunneling microscope

Yuzhen Shen; Jacek Swiatkiewicz; Jeff Winiarz; Przemyslaw Markowicz; Paras N. Prasad

Appl. Phys. Lett. 77, 2946–2948 (2000) https://doi.org/10.1063/1.1322629

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Spectroscopy of single metallic nanoparticles using total internal reflection microscopy

C. Sönnichsen; S. Geier; N. E. Hecker; G. von Plessen; J. Feldmann; H. Ditlbacher; B. Lamprecht; J. R. Krenn; F. R. Aussenegg; V. Z-H. Chan; J. P. Spatz; M. Möller

Appl. Phys. Lett. 77, 2949–2951 (2000) https://doi.org/10.1063/1.1323553

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Red electroluminescence in ${Si}^{+} -implanted$ sol–gel-derived ${SiO}_{2}$ films

K. Luterová; I. Pelant; J. Valenta; J.-L. Rehspringer; D. Muller; J. J. Grob; J. Dian; B. Hönerlage

Appl. Phys. Lett. 77, 2952–2954 (2000) https://doi.org/10.1063/1.1323551

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Four-band fiber-optic radiometry for determining the “true” temperature of gray bodies

V. Scharf; A. Katzir

Appl. Phys. Lett. 77, 2955–2957 (2000) https://doi.org/10.1063/1.1323736

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Ultrafast high-contrast all-optical switching using spin polarization in low-temperature-grown multiple quantum wells

Ryo Takahashi; Hiroki Itoh; Hidetoshi Iwamura

Appl. Phys. Lett. 77, 2958–2960 (2000) https://doi.org/10.1063/1.1324724

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Polymer waveguides useful over a very wide wavelength range from the ultraviolet to infrared

Y.-G. Zhao; W.-K. Lu; Y. Ma; S.-S. Kim; S. T. Ho; T. J. Marks

Appl. Phys. Lett. 77, 2961–2963 (2000) https://doi.org/10.1063/1.1323547

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Self-enhanced nonvolatile holographic storage in ${LiNbO}_{3} : Fe:Mn$ crystals

De’an Liu; Liren Liu; Youwen Liu; Changhe Zhou; Liangying Xu

Appl. Phys. Lett. 77, 2964–2966 (2000) https://doi.org/10.1063/1.1320018

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Polarization effects in near-ground-state quantum wire lasers

Chris Percival; J. Woodhead; P. A. Houston; A. G. Cullis; G. Hill; J. S. Roberts

Appl. Phys. Lett. 77, 2967–2969 (2000) https://doi.org/10.1063/1.1326039

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PLASMAS AND ELECTRICAL DISCHARGES

Laser-induced fluorescence of OH radicals in a dielectric barrier discharge

R. Sankaranarayanan; B. Pashaie; S. K. Dhali

Appl. Phys. Lett. 77, 2970–2972 (2000) https://doi.org/10.1063/1.1324002

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Effect of repetition rate of a pulsed microwave diamond forming plasma on the density of $C_{2}$

J. Khachan; B. W. James; A. Marfoure

Appl. Phys. Lett. 77, 2973–2975 (2000) https://doi.org/10.1063/1.1324722

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Interface corrugation in GaAs/AlAs (311)A superlattices

A. B. Vorob’ev; A. K. Gutakovsky; V. Ya. Prinz; V. V. Preobrazhenskii; M. A. Putyato

Appl. Phys. Lett. 77, 2976–2978 (2000) https://doi.org/10.1063/1.1322632

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Piezoelectric effects in ${In}_{0.5} {Ga}_{0.5} As$ self-assembled quantum dots grown on $(311)B$ GaAs substrates

A. Patanè; A. Levin; A. Polimeni; F. Schindler; P. C. Main; L. Eaves; M. Henini

Appl. Phys. Lett. 77, 2979–2981 (2000) https://doi.org/10.1063/1.1322631

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Polarized photoluminescence from solid films of nematic and chiral-nematic poly(p-phenylene)s

D. Katsis; H. P. Chen; S. H. Chen; L. J. Rothberg; T. Tsutsui

Appl. Phys. Lett. 77, 2982–2984 (2000) https://doi.org/10.1063/1.1323548

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Lift-up growth of aligned carbon nanotube patterns

Bingqing Wei; Z. J. Zhang; G. Ramanath; P. M. Ajayan

Appl. Phys. Lett. 77, 2985–2987 (2000) https://doi.org/10.1063/1.1323544

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Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells

Yen-Sheng Lin; Kung-Jeng Ma; C. Hsu; Shih-Wei Feng; Yung-Chen Cheng; Chi-Chih Liao; C. C. Yang; Chang-Cheng Chou; Chia-Ming Lee; Jen-Inn Chyi

Appl. Phys. Lett. 77, 2988–2990 (2000) https://doi.org/10.1063/1.1323542

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Oswald ripening and shape transitions of self-assembled PbSe quantum dots on PbTe (111) during annealing

A. Raab; G. Springholz

Appl. Phys. Lett. 77, 2991–2993 (2000) https://doi.org/10.1063/1.1323733

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Liquid-phase epitaxial growth of amorphous silicon during laser annealing of ultrashallow $p^{+} /n$ junctions

Y. F. Chong; K. L. Pey; Y. F. Lu; A. T. S. Wee; T. Osipowicz; H. L. Seng; A. See; J.-Y. Dai

Appl. Phys. Lett. 77, 2994–2996 (2000) https://doi.org/10.1063/1.1323549

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Optical study of ${ZnSe}_{x} {Te}_{1−x}$ alloys using spectroscopic ellipsometry

Hosun Lee; S. M. Kim; B. Y. Seo; E. Z. Seong; S. H. Choi; S. Lee; J. K. Furdyna

Appl. Phys. Lett. 77, 2997–2999 (2000) https://doi.org/10.1063/1.1323999

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Robust half metalicity in ${Fe}_{x} {Co}_{1−x} S_{2}$

I. I. Mazin

Appl. Phys. Lett. 77, 3000–3002 (2000) https://doi.org/10.1063/1.1324720

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Implantation of size-selected Si clusters into graphite

R. Neuendorf; R. E. Palmer; R. Smith

Appl. Phys. Lett. 77, 3003–3005 (2000) https://doi.org/10.1063/1.1324719

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Annihilation of nonradiative defects on hydrogenated silicon surfaces under pulsed-laser irradiation

V. Yu. Timoshenko; Th. Dittrich; F. Koch; B. V. Kamenev; J. Rappich

Appl. Phys. Lett. 77, 3006–3008 (2000) https://doi.org/10.1063/1.1324723

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Optical properties of a Fabry–Pérot microcavity with Er-doped hydrogenated amorphous silicon active layer

A. A. Dukin; N. A. Feoktistov; V. G. Golubev; A. V. Medvedev; A. B. Pevtsov; A. V. Sel’kin

Appl. Phys. Lett. 77, 3009–3011 (2000) https://doi.org/10.1063/1.1324725

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Effects of high-temperature annealing on the dielectric function of ${Ta}_{2} O_{5}$ films observed by spectroscopic ellipsometry

N. V. Nguyen; C. A. Richter; Yong Jai Cho; G. B. Alers; L. A. Stirling

Appl. Phys. Lett. 77, 3012–3014 (2000) https://doi.org/10.1063/1.1324730

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Formation of metal nanowires on suspended single-walled carbon nanotubes

Y. Zhang; Hongjie Dai

Appl. Phys. Lett. 77, 3015–3017 (2000) https://doi.org/10.1063/1.1324731

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Laser ablation and column formation in silicon under oxygen-rich atmospheres

A. J. Pedraza; J. D. Fowlkes; D. H. Lowndes

Appl. Phys. Lett. 77, 3018–3020 (2000) https://doi.org/10.1063/1.1324732

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Role of nitrogen in the reduced temperature dependence of band-gap energy in GaNAs

I. Suemune; K. Uesugi; W. Walukiewicz

Appl. Phys. Lett. 77, 3021–3023 (2000) https://doi.org/10.1063/1.1322633

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Stokes shift in InGaN epitaxial layers

Ruisheng Zheng; Tsunemasa Taguchi

Appl. Phys. Lett. 77, 3024–3026 (2000) https://doi.org/10.1063/1.1323543

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Carrier distribution and relaxation-induced defects of InAs/GaAs quantum dots

J. S. Wang; J. F. Chen; J. L. Huang; P. Y. Wang; X. J. Guo

Appl. Phys. Lett. 77, 3027–3029 (2000) https://doi.org/10.1063/1.1323735

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III-N semiconductor growth with activated nitrogen: State-specific study of $A^{3} Σ_{u}^{+}$ metastable $N_{2}$ molecules

D. C. Jordan; I. S. T. Tsong; David J. Smith; B. J. Wilkens; R. B. Doak

Appl. Phys. Lett. 77, 3030–3032 (2000) https://doi.org/10.1063/1.1323739

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Thermoelectric properties of junctions between metal and strongly correlated semiconductor

Massimo Rontani; L. J. Sham

Appl. Phys. Lett. 77, 3033–3035 (2000) https://doi.org/10.1063/1.1323738

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Thermally induced voltage offsets in ${Pb(Zr,Ti)O}_{3}$ thin films

Seung-Hyun Kim; Dong-Su Lee; Cheol Seong Hwang; Dong-Joo Kim; A. I. Kingon

Appl. Phys. Lett. 77, 3036–3038 (2000) https://doi.org/10.1063/1.1324001

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First-principles study of one-dimensional quantum-confined H-passivated ultrathin Si films

B. K. Agrawal; S. Agrawal

Appl. Phys. Lett. 77, 3039–3041 (2000) https://doi.org/10.1063/1.1324727

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Energy loss spectra of group III nitrides

V. I. Gavrilenko; R. Q. Wu

Appl. Phys. Lett. 77, 3042–3044 (2000) https://doi.org/10.1063/1.1323992

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May quasicrystals be good thermoelectric materials?

Enrique Maciá

Appl. Phys. Lett. 77, 3045–3047 (2000) https://doi.org/10.1063/1.1323995

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Impact ionization enhancements in ${Al}_{x} {Ga}_{1−x} Sb$ avalanche photodiodes

C. H. Grein; H. Ehrenreich

Appl. Phys. Lett. 77, 3048–3050 (2000) https://doi.org/10.1063/1.1324000

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High-dose Al-implanted 4H-SiC $p^{+} {-n-n}^{+}$ junctions

E. Kalinina; G. Kholujanov; V. Solov’ev; A. Strel’chuk; A. Zubrilov; V. Kossov; R. Yafaev; A. P. Kovarski; A. Hallén; A. Konstantinov; S. Karlsson; C. Adås; S. Rendakova; V. Dmitriev

Appl. Phys. Lett. 77, 3051–3053 (2000) https://doi.org/10.1063/1.1320868

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MAGNETISM AND SUPERCONDUCTIVITY

Magnetic properties and large magnetic-field-induced strains in off-stoichiometric Ni–Mn–Al Heusler alloys

A. Fujita; K. Fukamichi; F. Gejima; R. Kainuma; K. Ishida

Appl. Phys. Lett. 77, 3054–3056 (2000) https://doi.org/10.1063/1.1323552

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${YBa}_{2} {Cu}_{3} O_{7}$ Josephson junctions on ${LaAlO}_{3}$ bicrystals for terahertz-frequency applications

A. Kaestner; M. Volk; F. Ludwig; M. Schilling; J. Menzel

Appl. Phys. Lett. 77, 3057–3059 (2000) https://doi.org/10.1063/1.1323545

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Reduced magnetoresistance in magnetic tunnel junctions caused by geometrical artifacts

K. Matsuda; N. Watari; A. Kamijo; H. Tsuge

Appl. Phys. Lett. 77, 3060–3062 (2000) https://doi.org/10.1063/1.1323740

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Lorentz transmission electron microscopy of focused ion beam patterned magnetic antidot arrays

A. Yu. Toporov; R. M. Langford; A. K. Petford-Long

Appl. Phys. Lett. 77, 3063–3065 (2000) https://doi.org/10.1063/1.1323737

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Observation of asymmetric Bloch walls in epitaxial Co films with strong in-plane uniaxial anisotropy

I. L. Prejbeanu; L. D. Buda; U. Ebels; K. Ounadjela

Appl. Phys. Lett. 77, 3066–3068 (2000) https://doi.org/10.1063/1.1323990

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Supercurrent distribution in $high- T_{C}$ superconducting ${YBa}_{2} {Cu}_{3} O_{7−y}$ thin films by scanning superconducting quantum interference device microscopy

Akira Sugimoto; Tetsuji Yamaguchi; Ienari Iguchi

Appl. Phys. Lett. 77, 3069–3071 (2000) https://doi.org/10.1063/1.1323991

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Magnetic entropy change in Fe-based compound ${LaFe}_{10.6} {Si}_{2.4}$

X. X. Zhang; G. H. Wen; F. W. Wang; W. H. Wang; C. H. Yu; G. H. Wu

Appl. Phys. Lett. 77, 3072–3074 (2000) https://doi.org/10.1063/1.1323993

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DIELECTRICS AND FERROELECTRICITY

Pyroelectric properties of AlN

V. Fuflyigin; E. Salley; A. Osinsky; P. Norris

Appl. Phys. Lett. 77, 3075–3077 (2000) https://doi.org/10.1063/1.1324726

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Relaxor features in ferroelectric superlattices: A Maxwell–Wagner approach

G. Catalan; D. O’Neill; R. M. Bowman; J. M. Gregg

Appl. Phys. Lett. 77, 3078–3080 (2000) https://doi.org/10.1063/1.1324729

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Near interface $H^{+}$ trapping and its influence on $H^{+}$ transport in hydrogenated Unibond buried oxides

P. J. Macfarlane; R. E. Stahlbush

Appl. Phys. Lett. 77, 3081–3083 (2000) https://doi.org/10.1063/1.1323994

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Anisotropic tuning behavior in epitaxial ${Ba}_{0.5} {Sr}_{0.5} {TiO}_{3}$ thin films

S. Hyun; J. H. Lee; S. S. Kim; K. Char; S. J. Park; J. Sok; E. H. Lee

Appl. Phys. Lett. 77, 3084–3086 (2000) https://doi.org/10.1063/1.1323996

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Photoacoustic analysis of the ferroelectric ceramics specific heat

R. Castañeda-Guzmán; M. Villagrán-Muniz; J. M. Saniger-Blesa; S. J. Pérez-Ruiz; O. Pérez-Martı́nez

Appl. Phys. Lett. 77, 3087–3089 (2000) https://doi.org/10.1063/1.1323998

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Epitaxial growth of ${SrBi}_{2} {Nb}_{2} O_{9}$ on (110) ${SrTiO}_{3}$ and the establishment of a lower bound on the spontaneous polarization of ${SrBi}_{2} {Nb}_{2} O_{9}$

J. Lettieri; M. A. Zurbuchen; Y. Jia; D. G. Schlom; S. K. Streiffer; M. E. Hawley

Appl. Phys. Lett. 77, 3090–3092 (2000) https://doi.org/10.1063/1.1322055

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DEVICE PHYSICS

Dependence of open-circuit voltage in hydrogenated protocrystalline silicon solar cells on carrier recombination in p/i interface and bulk regions

Joshua M. Pearce; Randy J. Koval; Andre S. Ferlauto; Robert W. Collins; Christopher R. Wronski; Jeffrey Yang; Subbhendu Guha

Appl. Phys. Lett. 77, 3093–3095 (2000) https://doi.org/10.1063/1.1323550

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LiF/Al cathodes and the effect of LiF thickness on the device characteristics and built-in potential of polymer light-emitting diodes

T. M. Brown; R. H. Friend; I. S. Millard; D. J. Lacey; J. H. Burroughes; F. Cacialli

Appl. Phys. Lett. 77, 3096–3098 (2000) https://doi.org/10.1063/1.1323741

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Development of far-infrared Ge:Ga photoconductor having a longitudinal configuration

M. Fujiwara

Appl. Phys. Lett. 77, 3099–3101 (2000) https://doi.org/10.1063/1.1323742

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Mechanical mixing in nonlinear nanomechanical resonators

A. Erbe; H. Krömmer; A. Kraus; R. H. Blick; G. Corso; K. Richter

Appl. Phys. Lett. 77, 3102–3104 (2000) https://doi.org/10.1063/1.1324721

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APPLIED BIOPHYSICS

Self-assembled DNA networks and their electrical conductivity

Lintao Cai; Hitoshi Tabata; Tomoji Kawai

Appl. Phys. Lett. 77, 3105–3106 (2000) https://doi.org/10.1063/1.1323546

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INTERDISCIPLINARY AND GENERAL PHYSICS

Noninvasive investigation of defects in multicrystalline silicon and photovoltaic devices by photomagnetic detection using superconducting quantum interference device magnetometers

J. Beyer; Q. Zhong; TH. Schurig

Appl. Phys. Lett. 77, 3107–3109 (2000) https://doi.org/10.1063/1.1323734

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Shear force surface contrast on self-assembly monolayers

L. Vaccaro; M.-P. Bernal; F. Marquis-Weible; C. Duschl

Appl. Phys. Lett. 77, 3110–3112 (2000) https://doi.org/10.1063/1.1324728

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COMMENTS

Comment on “Organic electroluminescent devices by high-temperature processing and crystalline hole transporting layer” [Appl. Phys. Lett. 74, 3269 (1999)]

D. S. Qin; D. H. Yan; L. X. Wang

Appl. Phys. Lett. 77, 3113–3114 (2000) https://doi.org/10.1063/1.1323731

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Response to “Comment on ‘Organic electroluminescent devices by high-temperature processing and crystalline hole transporting layer ’ ” [Appl. Phys. Lett. 77, 3113 (2000)]

Z. Q. Gao; W. Y. Lai; T. C. Wong; C. S. Lee; I. Bello; S. T. Lee

Appl. Phys. Lett. 77, 3115 (2000) https://doi.org/10.1063/1.1323732

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