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Volume 77, Issue 17

23 October 2000

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
PLASMAS AND ELECTRICAL DISCHARGES
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
DEVICE PHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS

LASERS, OPTICS, AND OPTOELECTRONICS

Enhanced wavelength tuning of an InGaAsP-InP laser with a thermal-strain-magnifying trench

D. A. Cohen; B. Mason; J. Dolan; C. Burns; L. A. Coldren

Appl. Phys. Lett. 77, 2629–2631 (2000) https://doi.org/10.1063/1.1319527

View articletitled, Enhanced wavelength tuning of an InGaAsP-InP laser with a thermal-strain-magnifying trench

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Optically resolving dynamic processes in commercial liquid crystal cells

N. J. Smith; J. R. Sambles

Appl. Phys. Lett. 77, 2632–2634 (2000) https://doi.org/10.1063/1.1319533

View articletitled, Optically resolving dynamic processes in commercial liquid crystal cells

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Efficient photovoltaic cells from semiconducting polymer heterojunctions

Samson A. Jenekhe; Shujian Yi

Appl. Phys. Lett. 77, 2635–2637 (2000) https://doi.org/10.1063/1.1320022

View articletitled, Efficient photovoltaic cells from semiconducting polymer heterojunctions

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Near-field fiber tip to handle high input power more than 150 mW

S. T. Jung; D. J. Shin; Y. H. Lee

Appl. Phys. Lett. 77, 2638–2640 (2000) https://doi.org/10.1063/1.1320035

View articletitled, Near-field fiber tip to handle high input power more than 150 mW

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Organic solid-state distributed feedback dye laser with a nonmorphological modification grating

Michifumi Nagawa; Musubu Ichikawa; Toshiki Koyama; Hirofusa Shirai; Yoshio Taniguchi; Akihito Hongo; Shinji Tsuji; Yoshiaki Nakano

Appl. Phys. Lett. 77, 2641–2643 (2000) https://doi.org/10.1063/1.1320034

View articletitled, Organic solid-state distributed feedback dye laser with a nonmorphological modification grating

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Optical alignment and fixation of liquid crystals using azopolymer networks

Yue Zhao; Yanick Chénard; Tigran V. Galstian

Appl. Phys. Lett. 77, 2644–2646 (2000) https://doi.org/10.1063/1.1320461

View articletitled, Optical alignment and fixation of liquid crystals using azopolymer networks

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Distributed-feedback sol-gel dye laser tunable in the near ultraviolet

Xiao-lei Zhu; Dennis Lo

Appl. Phys. Lett. 77, 2647–2649 (2000) https://doi.org/10.1063/1.1320454

View articletitled, Distributed-feedback sol-gel dye laser tunable in the near ultraviolet

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Investigation of the sites of dark spots in organic light-emitting devices

Yoon-Fei Liew; Hany Aziz; Nan-Xing Hu; Hardy Sze-On Chan; Gu Xu; Zoran Popovic

Appl. Phys. Lett. 77, 2650–2652 (2000) https://doi.org/10.1063/1.1320459

View articletitled, Investigation of the sites of dark spots in organic light-emitting devices

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Chemical bonding state analysis of silicon carbide layers in Mo/SiC/Si multilayer mirrors by soft x-ray emission and absorption spectroscopy

Yasuji Muramatsu; Hisataka Takenaka; Yuko Ueno; Eric M. Gullikson; Rupert C. C. Perera

Appl. Phys. Lett. 77, 2653–2655 (2000) https://doi.org/10.1063/1.1318231

View articletitled, Chemical bonding state analysis of silicon carbide layers in Mo/SiC/Si multilayer mirrors by soft x-ray emission and absorption spectroscopy

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Analysis of spatial light modulation characteristics of $C_{60}$

Sukhdev Roy; C. P. Singh; K. P. J. Reddy

Appl. Phys. Lett. 77, 2656–2658 (2000) https://doi.org/10.1063/1.1320033

View articletitled, Analysis of spatial light modulation characteristics of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mn>60</mn></mrow></msub></math></span>

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PLASMAS AND ELECTRICAL DISCHARGES

The role of electrode material and polarization fatigue on electron emission from ferroelectric $Pb ({Zr}_{x} {Ti}_{1−x}) O_{3}$ cathodes

M. Angadi; O. Auciello; A. R. Krauss; H. W. Gundel

Appl. Phys. Lett. 77, 2659–2661 (2000) https://doi.org/10.1063/1.1319532

View articletitled, The role of electrode material and polarization fatigue on electron emission from ferroelectric <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Pb</mi><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Zr</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mtext>1−x</mtext></mrow></msub><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math></span> cathodes

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Generating positrons with femtosecond-laser pulses

C. Gahn; G. D. Tsakiris; G. Pretzler; K. J. Witte; C. Delfin; C.-G. Wahlström; D. Habs

Appl. Phys. Lett. 77, 2662–2664 (2000) https://doi.org/10.1063/1.1319526

View articletitled, Generating positrons with femtosecond-laser pulses

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Dislocation reduction in GaN films through selective island growth of InGaN

S. Keller; G. Parish; J. S. Speck; S. P. DenBaars; U. K. Mishra

Appl. Phys. Lett. 77, 2665–2667 (2000) https://doi.org/10.1063/1.1319528

View articletitled, Dislocation reduction in GaN films through selective island growth of InGaN

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Enhanced luminescence in InGaN multiple quantum wells with quaternary AlInGaN barriers

Jianping Zhang; J. Yang; G. Simin; M. Shatalov; M. Asif Khan; M. S. Shur; R. Gaska

Appl. Phys. Lett. 77, 2668–2670 (2000) https://doi.org/10.1063/1.1319531

View articletitled, Enhanced luminescence in InGaN multiple quantum wells with quaternary AlInGaN barriers

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Scanning calorimeter for nanoliter-scale liquid samples

E. A. Olson; M. Yu. Efremov; A. T. Kwan; S. Lai; V. Petrova; F. Schiettekatte; J. T. Warren; M. Zhang; L. H. Allen

Appl. Phys. Lett. 77, 2671–2673 (2000) https://doi.org/10.1063/1.1319506

View articletitled, Scanning calorimeter for nanoliter-scale liquid samples

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Optimized leaky mode spectroscopy with a single planar film

M. Leitz; R. P. Podgorsek; H. Franke; J. Woods

Appl. Phys. Lett. 77, 2674–2676 (2000) https://doi.org/10.1063/1.1319512

View articletitled, Optimized leaky mode spectroscopy with a single planar film

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Optical strain characteristics of holographically formed polymer-dispersed liquid crystal films

Darran R. Cairns; Christopher C. Bowley; Sorasak Danworaphong; Adam K. Fontecchio; Gregory P. Crawford; Le Li; Sadag M. Faris

Appl. Phys. Lett. 77, 2677–2679 (2000) https://doi.org/10.1063/1.1319510

View articletitled, Optical strain characteristics of holographically formed polymer-dispersed liquid crystal films

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Quantitative long-range-order measurement and disordering efficiency estimation in ion-irradiated bulk ${Ni}_{3} Al$ using cross-sectional conventional transmission electron microscopy

P. de Almeida; R. Schäublin; A. Almazouzi; M. Victoria; M. Döbeli

Appl. Phys. Lett. 77, 2680–2682 (2000) https://doi.org/10.1063/1.1320037

View articletitled, Quantitative long-range-order measurement and disordering efficiency estimation in ion-irradiated bulk <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ni</mi><mrow><mn>3</mn></mrow></msub><mi mathvariant="normal" xmlns="">Al</mi></math></span> using cross-sectional conventional transmission electron microscopy

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Boron diffusion in silicon in the presence of other species

Hong-Jyh Li; Puneet Kohli; Swaroop Ganguly; Taras A. Kirichenko; Sanjay Banerjee; Peter Zeitzoff

Appl. Phys. Lett. 77, 2683–2685 (2000) https://doi.org/10.1063/1.1320019

View articletitled, Boron diffusion in silicon in the presence of other species

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Light-induced long-range hydrogen motion in hydrogenated amorphous silicon at room temperature

Hyeonsik M. Cheong; Se-Hee Lee; Brent P. Nelson; Angelo Mascarenhas; Satyen K. Deb

Appl. Phys. Lett. 77, 2686–2688 (2000) https://doi.org/10.1063/1.1320015

View articletitled, Light-induced long-range hydrogen motion in hydrogenated amorphous silicon at room temperature

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Photochemical manipulation of discotic liquid crystal alignment by a poly(vinyl cinnamate) thin film

Seiichi Furumi; Kunihiro Ichimura; Hiroaki Sata; Yosuke Nishiura

Appl. Phys. Lett. 77, 2689–2691 (2000) https://doi.org/10.1063/1.1320017

View articletitled, Photochemical manipulation of discotic liquid crystal alignment by a poly(vinyl cinnamate) thin film

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Compositional mapping of the argon–methane–hydrogen system for polycrystalline to nanocrystalline diamond film growth in a hot-filament chemical vapor deposition system

T. Lin; G. Y. Yu; A. T. S. Wee; Z. X. Shen; Kian Ping Loh

Appl. Phys. Lett. 77, 2692–2694 (2000) https://doi.org/10.1063/1.1320039

View articletitled, Compositional mapping of the argon–methane–hydrogen system for polycrystalline to nanocrystalline diamond film growth in a hot-filament chemical vapor deposition system

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Electron beam and optical depth profiling of quasibulk GaN

L. Chernyak; A. Osinsky; G. Nootz; A. Schulte; J. Jasinski; M. Benamara; Z. Liliental-Weber; D. C. Look; R. J. Molnar

Appl. Phys. Lett. 77, 2695–2697 (2000) https://doi.org/10.1063/1.1319530

View articletitled, Electron beam and optical depth profiling of quasibulk GaN

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Size-dependent electrical behavior of spatially inhomogeneous barrier height regions on silicon

Robert C. Rossi; Ming X. Tan; Nathan S. Lewis

Appl. Phys. Lett. 77, 2698–2700 (2000) https://doi.org/10.1063/1.1319534

View articletitled, Size-dependent electrical behavior of spatially inhomogeneous barrier height regions on silicon

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Transparent p-type semiconductor: LaCuOS layered oxysulfide

K. Ueda; S. Inoue; S. Hirose; H. Kawazoe; H. Hosono

Appl. Phys. Lett. 77, 2701–2703 (2000) https://doi.org/10.1063/1.1319507

View articletitled, Transparent <em>p</em>-type semiconductor: LaCuOS layered oxysulfide

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Capacitance–voltage and admittance spectroscopy of self-assembled Ge islands in Si

C. Miesner; T. Asperger; K. Brunner; G. Abstreiter

Appl. Phys. Lett. 77, 2704–2706 (2000) https://doi.org/10.1063/1.1320036

View articletitled, Capacitance–voltage and admittance spectroscopy of self-assembled Ge islands in Si

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Comparative analysis of zinc-blende and wurtzite GaN for full-band polar optical phonon scattering and negative differential conductivity

C. Bulutay; B. K. Ridley; N. A. Zakhleniuk

Appl. Phys. Lett. 77, 2707–2709 (2000) https://doi.org/10.1063/1.1320020

View articletitled, Comparative analysis of zinc-blende and wurtzite GaN for full-band polar optical phonon scattering and negative differential conductivity

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Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectrics

S. Guha; E. Cartier; M. A. Gribelyuk; N. A. Bojarczuk; M. C. Copel

Appl. Phys. Lett. 77, 2710–2712 (2000) https://doi.org/10.1063/1.1320464

View articletitled, Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectrics

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Co-incorporation effects of O and Na with ${CulnS}_{2}$ thin films

Koichi Fukuzaki; Shigemi Kohiki; Tetsuya Yamamoto; Masaoki Oku; Takayuki Watanabe

Appl. Phys. Lett. 77, 2713–2715 (2000) https://doi.org/10.1063/1.1320014

View articletitled, Co-incorporation effects of O and Na with <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CulnS</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math></span> thin films

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Defect generation in ultrathin silicon dioxide films produced by anode hole injection

D. J. DiMaria

Appl. Phys. Lett. 77, 2716–2718 (2000) https://doi.org/10.1063/1.1320460

View articletitled, Defect generation in ultrathin silicon dioxide films produced by anode hole injection

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Anomalous positive charge trapping in thin nitrided oxides under high-field impulse stressing

P. S. Lim; W. K. Chim

Appl. Phys. Lett. 77, 2719–2721 (2000) https://doi.org/10.1063/1.1320041

View articletitled, Anomalous positive charge trapping in thin nitrided oxides under high-field impulse stressing

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Effects of prewells on transport in p-type resonant tunneling diodes

R. M. Lewis; H. P. Wei; S. Y. Lin; J. F. Klem

Appl. Phys. Lett. 77, 2722–2724 (2000) https://doi.org/10.1063/1.1320457

View articletitled, Effects of prewells on transport in <em>p</em>-type resonant tunneling diodes

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MAGNETISM AND SUPERCONDUCTIVITY

Giant magnetoimpedance near a metal–insulator transition: Study of Fe in a $V_{2} O_{3}$ matrix

Sangeetá Kale; S. E. Lofland; S. M. Bhagat; Litty Sebastian; K. Ramesha; J. Gopalakrishnan; S. B. Ogale; Y. H. Li; J. Garrison

Appl. Phys. Lett. 77, 2725–2727 (2000) https://doi.org/10.1063/1.1319508

View articletitled, Giant magnetoimpedance near a metal–insulator transition: Study of Fe in a <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">V</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span> matrix

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Magnetoresistance of self-assembled lateral multilayers

E. D. Tober; R. F. Marks; D. D. Chambliss; K. P. Roche; M. F. Toney; A. J. Kellock; R. F. C. Farrow

Appl. Phys. Lett. 77, 2728–2730 (2000) https://doi.org/10.1063/1.1319514

View articletitled, Magnetoresistance of self-assembled lateral multilayers

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Asymmetry of coercivity dependence on temperature in exchange-biased FeMn/Co bilayers

J. Wang; W. N. Wang; X. Chen; H. W. Zhao; J. G. Zhao; W. Sh. Zhan

Appl. Phys. Lett. 77, 2731–2733 (2000) https://doi.org/10.1063/1.1319511

View articletitled, Asymmetry of coercivity dependence on temperature in exchange-biased FeMn/Co bilayers

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Double-exchange ferromagnetism and magnetoresistance in ${LaMn}_{1−x} {Cu}_{x} O_{3}$ $(x⩽0.3)$

Young Sun; Xiaojun Xu; Wei Tong; Yuheng Zhang

Appl. Phys. Lett. 77, 2734–2736 (2000) https://doi.org/10.1063/1.1320021

View articletitled, Double-exchange ferromagnetism and magnetoresistance in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LaMn</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math></span> <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(x⩽0.3)</mtext></math></span>

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Magnetoimpedance measurements of ferromagnetic resonance and antiresonance

M. R. Britel; D. Ménard; L. G. Melo; P. Ciureanu; A. Yelon; R. W. Cochrane; M. Rouabhi; B. Cornut

Appl. Phys. Lett. 77, 2737–2739 (2000) https://doi.org/10.1063/1.1320042

View articletitled, Magnetoimpedance measurements of ferromagnetic resonance and antiresonance

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Theory of magnetostatic coupling in thin-film rectangular magnetic elements

E. Y. Tsymbal

Appl. Phys. Lett. 77, 2740–2742 (2000) https://doi.org/10.1063/1.1320016

View articletitled, Theory of magnetostatic coupling in thin-film rectangular magnetic elements

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Microplow-row lithography and fabrication of submicrometer magnetic structures

S. P. Li; A. Lebib; D. Peyrade; M. Natali; Y. Chen

Appl. Phys. Lett. 77, 2743–2745 (2000) https://doi.org/10.1063/1.1320462

View articletitled, Microplow-row lithography and fabrication of submicrometer magnetic structures

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Single-electron transistor strongly coupled to an electrostatically defined quantum dot

W. Lu; A. J. Rimberg; K. D. Maranowski; A. C. Gossard

Appl. Phys. Lett. 77, 2746–2748 (2000) https://doi.org/10.1063/1.1320455

View articletitled, Single-electron transistor strongly coupled to an electrostatically defined quantum dot

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DIELECTRICS AND FERROELECTRICITY

Structural distortion and ferroelectric properties of ${SrBi}_{2} ({Ta}_{1−x} {Nb}_{x})_{2} O_{9}$

Y. Shimakawa; Y. Kubo; Y. Tauchi; T. Kamiyama; H. Asano; F. Izumi

Appl. Phys. Lett. 77, 2749–2751 (2000) https://doi.org/10.1063/1.1319509

View articletitled, Structural distortion and ferroelectric properties of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrBi</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Ta</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Nb</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi>)</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>9</mn></mrow></msub></math></span>

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Ultrathin silicon nitride gate dielectrics prepared by catalytic chemical vapor deposition at low temperatures

Hidekazu Sato; Akira Izumi; Hideki Matsumura

Appl. Phys. Lett. 77, 2752–2754 (2000) https://doi.org/10.1063/1.1319513

View articletitled, Ultrathin silicon nitride gate dielectrics prepared by catalytic chemical vapor deposition at low temperatures

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Hysteresis loops of ferroelectric bilayers and superlattices

Khian-Hooi Chew; Lye-Hock Ong; Junaidah Osman; D. R. Tilley

Appl. Phys. Lett. 77, 2755–2757 (2000) https://doi.org/10.1063/1.1320040

View articletitled, Hysteresis loops of ferroelectric bilayers and superlattices

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Tandem injection of charge carriers across a metal-dielectric interface

V. I. Arkhipov; H. Bässler

Appl. Phys. Lett. 77, 2758–2760 (2000) https://doi.org/10.1063/1.1320456

View articletitled, Tandem injection of charge carriers across a metal-dielectric interface

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DEVICE PHYSICS

Time response analysis of ZnSe-based Schottky barrier photodetectors

E. Monroy; F. Vigué; F. Calle; J. I. Izpura; E. Muñoz; J.-P. Faurie

Appl. Phys. Lett. 77, 2761–2763 (2000) https://doi.org/10.1063/1.1320038

View articletitled, Time response analysis of ZnSe-based Schottky barrier photodetectors

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INTERDISCIPLINARY AND GENERAL PHYSICS

The effect of ${As}_{4}$ pressure on material qualities of AlGaAs/GaAs heterostructures grown on (111)B GaAs substrates

W. Yeo; R. Dimitrov; W. J. Schaff; L. F. Eastman

Appl. Phys. Lett. 77, 2764–2766 (2000) https://doi.org/10.1063/1.1319535

View articletitled, The effect of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">As</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math></span> pressure on material qualities of AlGaAs/GaAs heterostructures grown on (111)B GaAs substrates

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Nucleation and growth of carbon nanotubes by microwave plasma chemical vapor deposition

Chris Bower; Otto Zhou; Wei Zhu; D. J. Werder; Sungho Jin

Appl. Phys. Lett. 77, 2767–2769 (2000) https://doi.org/10.1063/1.1319529

View articletitled, Nucleation and growth of carbon nanotubes by microwave plasma chemical vapor deposition

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