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Volume 77, Issue 16

16 October 2000

Applied Physics Letters Cover Image for Volume 77, Issue 16

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
PLASMAS AND ELECTRICAL DISCHARGES
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
DEVICE PHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS
COMMENTS

LASERS, OPTICS, AND OPTOELECTRONICS

GaAs/AlGaAs quantum-well photodetector for visible and middle infrared dual-band detection

H. C. Liu; C. Y. Song; A. Shen; M. Gao; Z. R. Wasilewski; M. Buchanan

Appl. Phys. Lett. 77, 2437–2439 (2000) https://doi.org/10.1063/1.1318232

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Strong modification of photoluminescence in erbium-doped porous silicon microcavities

Y. Zhou; P. A. Snow; P. St. J. Russell

Appl. Phys. Lett. 77, 2440–2442 (2000) https://doi.org/10.1063/1.1318230

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Photoluminescence from pendant dye molecules mediated by exciton transport on helical polysilane chains

Hiroaki Tachibana; Hideo Kishida; Yoshinori Tokura

Appl. Phys. Lett. 77, 2443–2445 (2000) https://doi.org/10.1063/1.1318395

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Luminescence enhancement from hydrogen-passivated self-assembled quantum dots

E. C. Le Ru; P. D. Siverns; R. Murray

Appl. Phys. Lett. 77, 2446–2448 (2000) https://doi.org/10.1063/1.1318931

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Amplification of picosecond optical pulses in midinfrared intersubband semiconductor optical amplifiers

J. M. Tang; P. S. Spencer; K. A. Shore

Appl. Phys. Lett. 77, 2449–2451 (2000) https://doi.org/10.1063/1.1318932

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Electrical characterization of conducting polypyrrole by THz time-domain spectroscopy

Tae-In Jeon; D. Grischkowsky; A. K. Mukherjee; Reghu Menon

Appl. Phys. Lett. 77, 2452–2454 (2000) https://doi.org/10.1063/1.1319188

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${Co}^{2+} {:LiGa}_{5} O_{8}$ saturable absorber passive Q switch for 1.34 μm ${Nd}^{3+} {:YAlO}_{3}$ and 1.54 μm ${Er}^{3+} :glass$ lasers

I. A. Denisov; M. I. Demchuk; N. V. Kuleshov; K. V. Yumashev

Appl. Phys. Lett. 77, 2455–2457 (2000) https://doi.org/10.1063/1.1319179

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Color engineering by modified oligothiophene blends

M. Anni; G. Gigli; V. Paladini; R. Cingolani; G. Barbarella; L. Favaretto; G. Sotgiu; M. Zambianchi

Appl. Phys. Lett. 77, 2458–2460 (2000) https://doi.org/10.1063/1.1314886

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Enhanced photoinduced birefringence in polymer microcavities

Rozenn Piron; Eric Toussaere; Dominique Josse; Joseph Zyss

Appl. Phys. Lett. 77, 2461–2463 (2000) https://doi.org/10.1063/1.1316072

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PLASMAS AND ELECTRICAL DISCHARGES

Initiation of an early-stage plasma during picosecond laser ablation of solids

Samuel S. Mao; Xianglei Mao; Ralph Greif; Richard E. Russo

Appl. Phys. Lett. 77, 2464–2466 (2000) https://doi.org/10.1063/1.1318239

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Diagnostics of inductively coupled chlorine plasmas: Measurements of the neutral gas temperature

V. M. Donnelly; M. V. Malyshev

Appl. Phys. Lett. 77, 2467–2469 (2000) https://doi.org/10.1063/1.1318727

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Probing capped and uncapped mesoporous low-dielectric constant films using positron annihilation lifetime spectroscopy

Mihail P. Petkov; Marc H. Weber; Kelvin G. Lynn; Kenneth P. Rodbell

Appl. Phys. Lett. 77, 2470–2472 (2000) https://doi.org/10.1063/1.1318238

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Efficient photovoltaic energy conversion in pentacene-based heterojunctions

J. H. Schön; Ch. Kloc; B. Batlogg

Appl. Phys. Lett. 77, 2473–2475 (2000) https://doi.org/10.1063/1.1318234

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Effect of Sb doping on the thermoelectric properties of Ti-based half-Heusler compounds, ${TiNiSn}_{1−x} {Sb}_{x}$

S. Bhattacharya; A. L. Pope; R. T. Littleton, IV; Terry M. Tritt; V. Ponnambalam; Y. Xia; S. J. Poon

Appl. Phys. Lett. 77, 2476–2478 (2000) https://doi.org/10.1063/1.1318237

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Faceted inversion domain boundary in GaN films doped with Mg

L. T. Romano; J. E. Northrup; A. J. Ptak; T. H. Myers

Appl. Phys. Lett. 77, 2479–2481 (2000) https://doi.org/10.1063/1.1318731

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Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN

J. C. Harmand; G. Ungaro; L. Largeau; G. Le Roux

Appl. Phys. Lett. 77, 2482–2484 (2000) https://doi.org/10.1063/1.1318228

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Molecular beam epitaxial growth of atomically smooth scandium nitride films

Hamad Al-Brithen; Arthur R. Smith

Appl. Phys. Lett. 77, 2485–2487 (2000) https://doi.org/10.1063/1.1318227

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Domain mapping of periodically poled lithium niobate via terahertz wave form analysis

Y.-S. Lee; T. Meade; M. L. Naudeau; T. B. Norris; A. Galvanauskas

Appl. Phys. Lett. 77, 2488–2490 (2000) https://doi.org/10.1063/1.1318725

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Molecular beam epitaxy growth of GaN on C-terminated 6H–SiC $(000 \bar{1})$ surface

Z. P. Guan; A. L. Cai; J. S. Cabalu; H. L. Porter; S. Huang

Appl. Phys. Lett. 77, 2491–2493 (2000) https://doi.org/10.1063/1.1318723

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Photorefraction in ${LiNbO}_{3}$ as a function of [Li]/[Nb] and MgO concentrations

Y. Furukawa; K. Kitamura; S. Takekawa; A. Miyamoto; M. Terao; N. Suda

Appl. Phys. Lett. 77, 2494–2496 (2000) https://doi.org/10.1063/1.1318721

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Influence of growth direction on order–disorder transition in $(GaAs)_{1−x} (Ge)_{2x}$ semiconductor alloys

A. G. Rodrı́guez; H. Navarro-Contreras; M. A. Vidal

Appl. Phys. Lett. 77, 2497–2499 (2000) https://doi.org/10.1063/1.1318722

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Optical microcavities using highly luminescent films of semiconductor nanocrystals

Chris E. Finlayson; David S. Ginger; Neil C. Greenham

Appl. Phys. Lett. 77, 2500–2502 (2000) https://doi.org/10.1063/1.1318720

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Observation of long photoluminescence decay times for high-quality GaN grown by metalorganic chemical vapor deposition

Ho Ki Kwon; C. J. Eiting; D. J. H. Lambert; M. M. Wong; R. D. Dupuis; Z. Liliental-Weber; M. Benamara

Appl. Phys. Lett. 77, 2503–2505 (2000) https://doi.org/10.1063/1.1318396

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Strong blue emission from As doped GaN grown by molecular beam epitaxy

A. J. Winser; S. V. Novikov; C. S. Davis; T. S. Cheng; C. T. Foxon; I. Harrison

Appl. Phys. Lett. 77, 2506–2508 (2000) https://doi.org/10.1063/1.1318394

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Effect of overgrowth temperature on the photoluminescence of Ge/Si islands

O. G. Schmidt; U. Denker; K. Eberl; O. Kienzle; F. Ernst

Appl. Phys. Lett. 77, 2509–2511 (2000) https://doi.org/10.1063/1.1318729

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Structural analysis of ${In}_{x} {Ga}_{1−x} N$ single quantum wells by coaxial-impact collision ion scattering spectroscopy

M. Sumiya; S. Nakamura; S. F. Chichibu; K. Mizuno; M. Furusawa; M. Yoshimoto

Appl. Phys. Lett. 77, 2512–2514 (2000) https://doi.org/10.1063/1.1318933

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Refractive index dispersion functions of solid-phase polymers by multicolor optical diffraction

J. V. Ford; B. G. Sumpter; D. W. Noid; M. D. Barnes; J. U. Otaigbe

Appl. Phys. Lett. 77, 2515–2517 (2000) https://doi.org/10.1063/1.1318940

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Enhancement of cathodoluminescent and photoluminescent properties of ${Eu:Y}_{2} O_{3}$ luminescent films by vacuum cooling

D. Kumar; J. Sankar; K. G. Cho; V. Craciun; R. K. Singh

Appl. Phys. Lett. 77, 2518–2520 (2000) https://doi.org/10.1063/1.1318938

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Characterization of excimer-laser-annealed polycrystalline silicon films grown by ultrahigh-vacuum chemical vapor deposition

Ying-Chia Chen; YewChung Sermon Wu; I-Chung Tung; Chi-Wei Chao; Ming-Shiann Feng; Huang-Chung Chen

Appl. Phys. Lett. 77, 2521–2523 (2000) https://doi.org/10.1063/1.1318937

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Complete removal of threading dislocations from mismatched layers by patterned heteroepitaxial processing

X. G. Zhang; A. Rodriguez; X. Wang; P. Li; F. C. Jain; J. E. Ayers

Appl. Phys. Lett. 77, 2524–2526 (2000) https://doi.org/10.1063/1.1319178

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Phase diagram of epitaxial ferromagnets: Erbium (0001) on sapphire $(112̄0)$

C. S. Durfee; C. P. Flynn

Appl. Phys. Lett. 77, 2527–2529 (2000) https://doi.org/10.1063/1.1319182

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Y-junction carbon nanotubes

B. C. Satishkumar; P. John Thomas; A. Govindaraj; C. N. R. Rao

Appl. Phys. Lett. 77, 2530–2532 (2000) https://doi.org/10.1063/1.1319185

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Dislocation energetics in epitaxial strained islands

B. J. Spencer; J. Tersoff

Appl. Phys. Lett. 77, 2533–2535 (2000) https://doi.org/10.1063/1.1319186

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Pressure dependence of the blue luminescence in Mg-doped GaN

S. Ves; U. D. Venkateswaran; I. Loa; K. Syassen; F. Shahedipour; B. W. Wessels

Appl. Phys. Lett. 77, 2536–2538 (2000) https://doi.org/10.1063/1.1319180

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Photoirradiation effect on polymer light-emitting device: Separation between recombination zone and photo-oxidized defects

Kazuya Tada; Mitsuyoshi Onoda

Appl. Phys. Lett. 77, 2539–2541 (2000) https://doi.org/10.1063/1.1314888

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Optical properties of high-quality ${CuInSe}_{2}$ single crystals

A. V. Mudriy; I. V. Bodnar; I. A. Viktorov; V. F. Gremenok; M. V. Yakushev; R. D. Tomlinson; A. E. Hill; R. D. Pilkington

Appl. Phys. Lett. 77, 2542–2544 (2000) https://doi.org/10.1063/1.1308525

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Optical properties of multiple layers of self-organized InAs quantum dots emitting at 1.3 μm

J. Bloch; J. Shah; L. N. Pfeiffer; K. W. West; S. N. G. Chu

Appl. Phys. Lett. 77, 2545–2547 (2000) https://doi.org/10.1063/1.1289493

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Improvement on epitaxial grown of InN by migration enhanced epitaxy

Hai Lu; William J. Schaff; Jeonghyun Hwang; Hong Wu; Wesley Yeo; Amit Pharkya; Lester F. Eastman

Appl. Phys. Lett. 77, 2548–2550 (2000) https://doi.org/10.1063/1.1318235

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High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates

E. Frayssinet; W. Knap; P. Lorenzini; N. Grandjean; J. Massies; C. Skierbiszewski; T. Suski; I. Grzegory; S. Porowski; G. Simin; X. Hu; M. Asif Khan; M. S. Shur; R. Gaska; D. Maude

Appl. Phys. Lett. 77, 2551–2553 (2000) https://doi.org/10.1063/1.1318236

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Finite size effects in carbon nanotubes

Jian Wu; Wenhui Duan; Bing-Lin Gu; Jing-Zhi Yu; Yoshiyuki Kawazoe

Appl. Phys. Lett. 77, 2554–2556 (2000) https://doi.org/10.1063/1.1318241

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Conductive layer near the GaN/sapphire interface and its effect on electron transport in unintentionally doped n-type GaN epilayers

M. G. Cheong; K. S. Kim; C. S. Oh; N. W. Namgung; G. M. Yang; C.-H. Hong; K. Y. Lim; E.-K. Suh; K. S. Nahm; H. J. Lee; D. H. Lim; A. Yoshikawa

Appl. Phys. Lett. 77, 2557–2559 (2000) https://doi.org/10.1063/1.1318728

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Fowler–Nordheim hole tunneling in $p- {SiC/SiO}_{2}$ structures

R. K. Chanana; K. McDonald; M. Di Ventra; S. T. Pantelides; L. C. Feldman; G. Y. Chung; C. C. Tin; J. R. Williams; R. A. Weller

Appl. Phys. Lett. 77, 2560–2562 (2000) https://doi.org/10.1063/1.1318229

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Variable frequency photoconductive grating method

J. P. Nicholson

Appl. Phys. Lett. 77, 2563–2565 (2000) https://doi.org/10.1063/1.1318936

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Role of inversion layer formation in producing low effective surface recombination velocities at Si/liquid contacts

William J. Royea; David J. Michalak; Nathan S. Lewis

Appl. Phys. Lett. 77, 2566–2568 (2000) https://doi.org/10.1063/1.1318935

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Ultrashallow junctions in silicon formed by molecular-beam epitaxy using boron delta doping

Phillip E. Thompson; Joe Bennett

Appl. Phys. Lett. 77, 2569–2571 (2000) https://doi.org/10.1063/1.1319189

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Metal-assisted chemical etching in ${HF/H}_{2} O_{2}$ produces porous silicon

X. Li; P. W. Bohn

Appl. Phys. Lett. 77, 2572–2574 (2000) https://doi.org/10.1063/1.1319191

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Thin film semiconductor deposition on free-standing ZnO columns

R. Könenkamp; K. Boedecker; M. C. Lux-Steiner; M. Poschenrieder; F. Zenia; C. Levy-Clement; S. Wagner

Appl. Phys. Lett. 77, 2575–2577 (2000) https://doi.org/10.1063/1.1319187

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Aharonov–Bohm phase effects and inelastic scattering in transport through a parallel tunnel-coupled symmetric double-dot device

Anatoly Yu. Smirnov; Norman J. M. Horing; Lev G. Mourokh

Appl. Phys. Lett. 77, 2578–2580 (2000) https://doi.org/10.1063/1.1317542

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MAGNETISM AND SUPERCONDUCTIVITY

Longitudinal magnetic recording media with thermal stabilization layers

E. N. Abarra; A. Inomata; H. Sato; I. Okamoto; Y. Mizoshita

Appl. Phys. Lett. 77, 2581–2583 (2000) https://doi.org/10.1063/1.1319183

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Preparation of crack-free antiferroelectric ${PbZrO}_{3}$ thin films by a two-step annealing process

L. B. Kong; J. Ma

Appl. Phys. Lett. 77, 2584–2586 (2000) https://doi.org/10.1063/1.1319184

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DIELECTRICS AND FERROELECTRICITY

High nonlinearity of ${Ba}_{0.6} {Sr}_{0.4} {TiO}_{3}$ films heteroepitaxially grown on MgO substrates

B. H. Park; Y. Gim; Y. Fan; Q. X. Jia; P. Lu

Appl. Phys. Lett. 77, 2587–2589 (2000) https://doi.org/10.1063/1.1318233

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Degradation of ferroelectric ${Pb(Zr, Ti)O}_{3}$ under reducing conditions

Y. Shimakawa; Y. Kubo

Appl. Phys. Lett. 77, 2590–2592 (2000) https://doi.org/10.1063/1.1318240

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$({Ba}_{x} {Sr}_{1−x}) {Ti}_{1+y} O_{3+z}$ interface contamination and its effect on electrical properties

Jaemo Im; S. K. Streiffer; Orlando Auciello; Alan R. Krauss

Appl. Phys. Lett. 77, 2593–2595 (2000) https://doi.org/10.1063/1.1318730

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Curie–Weiss-type law for the strain and stress effects on the dielectric response of ferroelectric thin films

N. A. Pertsev; V. G. Koukhar; R. Waser; S. Hoffmann

Appl. Phys. Lett. 77, 2596–2598 (2000) https://doi.org/10.1063/1.1318934

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Ionic Wiedemann–Franz law

J. F. Scott; H. G. Bohn; W. Schenk

Appl. Phys. Lett. 77, 2599–2600 (2000) https://doi.org/10.1063/1.1318939

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DEVICE PHYSICS

Enhanced quantized current driven by surface acoustic waves

J. Ebbecke; G. Bastian; M. Blöcker; K. Pierz; F. J. Ahlers

Appl. Phys. Lett. 77, 2601–2603 (2000) https://doi.org/10.1063/1.1319190

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Scanning nanolithography using a material-filled nanopipette

Mun-Heon Hong; Ki Hyun Kim; Joonho Bae; Wonho Jhe

Appl. Phys. Lett. 77, 2604–2606 (2000) https://doi.org/10.1063/1.1319181

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INTERDISCIPLINARY AND GENERAL PHYSICS

Application of atomic-force-microscope direct patterning to selective positioning of InAs quantum dots on GaAs

C. K. Hyon; S. C. Choi; S.-H. Song; S. W. Hwang; M. H. Son; D. Ahn; Y. J. Park; E. K. Kim

Appl. Phys. Lett. 77, 2607–2609 (2000) https://doi.org/10.1063/1.1318393

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Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures

A. R. Stonas; P. Kozodoy; H. Marchand; P. Fini; S. P. DenBaars; U. K. Mishra; E. L. Hu

Appl. Phys. Lett. 77, 2610–2612 (2000) https://doi.org/10.1063/1.1318726

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Self-healing effects in the fabrication process of photonic crystals

Takayuki Kawashima; Kenta Miura; Takashi Sato; Shojiro Kawakami

Appl. Phys. Lett. 77, 2613–2615 (2000) https://doi.org/10.1063/1.1316070

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COMMENTS

Comment on “Low-temperature homoepitaxial growth on high-miscut Si(111) mediated by thin overlayers of Pb” [Appl. Phys. Lett. 75, 2954 (1999)]

P. G. Evans; O. D. Dubon; J. F. Chervinsky; F. Spaepen; J. A. Golovchenko

Appl. Phys. Lett. 77, 2616 (2000) https://doi.org/10.1063/1.1318930

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