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LASERS, OPTICS, AND OPTOELECTRONICS

Photostability enhancement of an azobenzene photonic polymer

A. Galvan-Gonzalez; K. D. Belfield; G. I. Stegeman; M. Canva; K.-P. Chan; K. Park; L. Sukhomlinova; R. J. Twieg

Appl. Phys. Lett. 77, 2083–2085 (2000) https://doi.org/10.1063/1.1313809

Abstract

View articletitled, Photostability enhancement of an azobenzene photonic polymer

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Surface-emitting distributed feedback quantum-cascade lasers

W. Schrenk; N. Finger; S. Gianordoli; L. Hvozdara; G. Strasser; E. Gornik

Appl. Phys. Lett. 77, 2086–2088 (2000) https://doi.org/10.1063/1.1313807

Abstract

View articletitled, Surface-emitting distributed feedback quantum-cascade lasers

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Time-gated scanning near-field optical microscopy

S. K. Sekatskii; G. T. Shubeita; G. Dietler

Appl. Phys. Lett. 77, 2089–2091 (2000) https://doi.org/10.1063/1.1314287

Abstract

View articletitled, Time-gated scanning near-field optical microscopy

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Comparative study of the analog performance of a vertical-cavity surface-emitting laser under gain and cavity loss modulation

Janice A. Hudgings; Robert J. Stone; Sui F. Lim; Kam Y. Lau; Connie J. Chang-Hasnain

Appl. Phys. Lett. 77, 2092–2094 (2000) https://doi.org/10.1063/1.1314297

Abstract

View articletitled, Comparative study of the analog performance of a vertical-cavity surface-emitting laser under gain and cavity loss modulation

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Optical control of third-harmonic generation in azo-doped polymethylmethacrylate thin films

Victor M. Churikov; Chia Chen Hsu

Appl. Phys. Lett. 77, 2095–2097 (2000) https://doi.org/10.1063/1.1314878

Abstract

View articletitled, Optical control of third-harmonic generation in azo-doped polymethylmethacrylate thin films

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Dual-band infrared metallodielectric photonic crystal filters

J. A. Oswald; B.-I. Wu; K. A. McIntosh; L. J. Mahoney; S. Verghese

Appl. Phys. Lett. 77, 2098–2100 (2000) https://doi.org/10.1063/1.1314880

Abstract

View articletitled, Dual-band infrared metallodielectric photonic crystal filters

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Tuning of second-harmonic generation in waveguides induced by photorefractive spatial solitons

Song Lan; Charalambos Anastassiou; Mordechai Segev; Ming-feng Shih; J. A. Giordmaine; Greg Mizell

Appl. Phys. Lett. 77, 2101–2103 (2000) https://doi.org/10.1063/1.1314890

Abstract

View articletitled, Tuning of second-harmonic generation in waveguides induced by photorefractive spatial solitons

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Passively mode-locked picosecond lasers with up to 59 GHz repetition rate

L. Krainer; R. Paschotta; M. Moser; U. Keller

Appl. Phys. Lett. 77, 2104–2105 (2000) https://doi.org/10.1063/1.1315336

Abstract

View articletitled, Passively mode-locked picosecond lasers with up to 59 GHz repetition rate

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Permanent polarization gratings in photosensitive Langmuir–Blodgett films

G. Cipparrone; A. Mazzulla; S. P. Palto; S. G. Yudin; L. M. Blinov

Appl. Phys. Lett. 77, 2106–2108 (2000) https://doi.org/10.1063/1.1308056

Abstract

View articletitled, Permanent polarization gratings in photosensitive Langmuir–Blodgett films

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Near-field infrared imaging with a microfabricated solid immersion lens

D. A. Fletcher; K. B. Crozier; C. F. Quate; G. S. Kino; K. E. Goodson; D. Simanovskii; D. V. Palanker

Appl. Phys. Lett. 77, 2109–2111 (2000) https://doi.org/10.1063/1.1313368

Abstract

View articletitled, Near-field infrared imaging with a microfabricated solid immersion lens

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PLASMAS AND ELECTRICAL DISCHARGES

Generation of atmospheric pressure plasma with a dual-chamber discharge

H. D. Park; S. K. Dhali

Appl. Phys. Lett. 77, 2112–2114 (2000) https://doi.org/10.1063/1.1315339

Abstract

View articletitled, Generation of atmospheric pressure plasma with a dual-chamber discharge

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Electron energy-loss spectroscopy characterization of pyramidal defects in metalorganic vapor-phase epitaxy Mg-doped GaN thin films

M. Benaissa; P. Vennéguès; B. Beaumont; P. Gibart; W. Saikaly; A. Charai

Appl. Phys. Lett. 77, 2115–2117 (2000) https://doi.org/10.1063/1.1313811

Abstract

View articletitled, Electron energy-loss spectroscopy characterization of pyramidal defects in metalorganic vapor-phase epitaxy Mg-doped GaN thin films

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Enhanced second harmonic generation at surface in transparent nanocrystalline ${TeO}_{2}$ -based glass ceramics

Ryosuke Sakai; Yasuhiko Benino; Takayuki Komatsu

Appl. Phys. Lett. 77, 2118–2120 (2000) https://doi.org/10.1063/1.1313805

Abstract

View articletitled, Enhanced second harmonic generation at surface in transparent nanocrystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TeO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math>-based glass ceramics

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Far-infrared reflectivity of ${Cd}_{3−x} {Zn}_{x} {As}_{2}$ monocrystals

A. I. Belogorokhov; I. S. Zakharov; A. V. Kochura; A. F. Knjazev

Appl. Phys. Lett. 77, 2121–2123 (2000) https://doi.org/10.1063/1.1314292

Abstract

View articletitled, Far-infrared reflectivity of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cd</mi><mrow><mtext>3−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Zn</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">As</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> monocrystals

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Stress tuning in crystal ion slicing to form single-crystal potassium tantalate films

M. Levy; R. M. Osgood, Jr.; A. S. Bhalla; R. Guo; L. E. Cross; A. Kumar; S. Sankaran; H. Bakhru

Appl. Phys. Lett. 77, 2124–2126 (2000) https://doi.org/10.1063/1.1314294

Abstract

View articletitled, Stress tuning in crystal ion slicing to form single-crystal potassium tantalate films

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Electromigration in ${YBa}_{2} {Cu}_{3} O_{7−δ}$ using a metal clad near-field scanning optical microscope probe

S. H. Huerth; M. P. Taylor; H. D. Hallen; B. H. Moeckly

Appl. Phys. Lett. 77, 2127–2129 (2000) https://doi.org/10.1063/1.1314296

Abstract

View articletitled, Electromigration in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">YBa</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mtext>7−δ</mtext></mrow></msub></math> using a metal clad near-field scanning optical microscope probe

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X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices

S. J. Xu; H. Wang; Q. Li; M. H. Xie; X. C. Wang; W. J. Fan; S. L. Feng

Appl. Phys. Lett. 77, 2130–2132 (2000) https://doi.org/10.1063/1.1314298

Abstract

View articletitled, X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices

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Determination of thickness and optical constants of amorphous silicon films from transmittance data

M. Mulato; I. Chambouleyron; E. G. Birgin; J. M. Martı́nez

Appl. Phys. Lett. 77, 2133–2135 (2000) https://doi.org/10.1063/1.1314299

Abstract

View articletitled, Determination of thickness and optical constants of amorphous silicon films from transmittance data

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Optical bandgap formation in AlInGaN alloys

G. Tamulaitis; K. Kazlauskas; S. Juršėnas; A. Žukauskas; M. A. Khan; J. W. Yang; J. Zhang; G. Simin; M. S. Shur; R. Gaska

Appl. Phys. Lett. 77, 2136–2138 (2000) https://doi.org/10.1063/1.1314288

Abstract

View articletitled, Optical bandgap formation in AlInGaN alloys

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Stress-induced anisotropy of phosphorous islands on gallium arsenide

C. H. Li; L. Li; Q. Fu; M. J. Begarney; R. F. Hicks

Appl. Phys. Lett. 77, 2139–2141 (2000) https://doi.org/10.1063/1.1314290

Abstract

View articletitled, Stress-induced anisotropy of phosphorous islands on gallium arsenide

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Lattice location of implanted Cu in highly doped Si

U. Wahl; A. Vantomme; G. Langouche; J. P. Araújo; L. Peralta; J. G. Correia

Appl. Phys. Lett. 77, 2142–2144 (2000) https://doi.org/10.1063/1.1314876

Abstract

View articletitled, Lattice location of implanted Cu in highly doped Si

Supplementary Material

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X-ray diffraction analysis of the defect structure in epitaxial GaN

H. Heinke; V. Kirchner; S. Einfeldt; D. Hommel

Appl. Phys. Lett. 77, 2145–2147 (2000) https://doi.org/10.1063/1.1314877

Abstract

View articletitled, X-ray diffraction analysis of the defect structure in epitaxial GaN

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Very small temperature-dependent band-gap energy in TlInGaAs/InP double heterostructures grown by gas-source molecular-beam epitaxy

A. Ayabe; H. Asahi; H. J. Lee; O. Maeda; K. Konishi; K. Asami; S. Gonda

Appl. Phys. Lett. 77, 2148–2150 (2000) https://doi.org/10.1063/1.1314881

Abstract

View articletitled, Very small temperature-dependent band-gap energy in TlInGaAs/InP double heterostructures grown by gas-source molecular-beam epitaxy

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Dynamics of optical gain in ${In}_{x} {Ga}_{1−x} N$ multi-quantum-well-based laser diodes

Yoichi Kawakami; Yukio Narukawa; Kunimichi Omae; Shigeo Fujita; Shuji Nakamura

Appl. Phys. Lett. 77, 2151–2153 (2000) https://doi.org/10.1063/1.1314882

Abstract

View articletitled, Dynamics of optical gain in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">N</mi></math> multi-quantum-well-based laser diodes

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Lattice location of erbium in high-fluence implanted silicon–germanium: Backscattering/channeling study

V. S. Touboltsev; J. Räisänen; E. Johnson; A. Johansen; L. Sarholt

Appl. Phys. Lett. 77, 2154–2155 (2000) https://doi.org/10.1063/1.1315345

Abstract

View articletitled, Lattice location of erbium in high-fluence implanted silicon–germanium: Backscattering/channeling study

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Dependence of the critical thickness on Si doping of InGaAs on GaAs

B. K. Tanner; P. J. Parbrook; C. R. Whitehouse; A. M. Keir; A. D. Johnson; J. Jones; D. Wallis; L. M. Smith; B. Lunn; J. H. C. Hogg

Appl. Phys. Lett. 77, 2156–2158 (2000) https://doi.org/10.1063/1.1315342

Abstract

View articletitled, Dependence of the critical thickness on Si doping of InGaAs on GaAs

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Efficient radioluminescence of the ${Ce}^{3+}$ -doped Na–Gd phosphate glasses

M. Nikl; K. Nitsch; E. Mihokova; N. Solovieva; J. A. Mares; P. Fabeni; G. P. Pazzi; M. Martini; A. Vedda; S. Baccaro

Appl. Phys. Lett. 77, 2159–2161 (2000) https://doi.org/10.1063/1.1315337

Abstract

View articletitled, Efficient radioluminescence of the <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Ce</mi><mrow><mi mathvariant="normal">3+</mi></mrow></msup></math>-doped Na–Gd phosphate glasses

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Morphology and cathodoluminescence of Li-doped ${Gd}_{2} O_{3} {:Eu}^{3+},$ a red phosphor operating at low voltages

Jung-Chul Park; Hye-Kyung Moon; Dong-Kuk Kim; Song-Ho Byeon; Bong-Chul Kim; Kyung-Soo Suh

Appl. Phys. Lett. 77, 2162–2164 (2000) https://doi.org/10.1063/1.1315341

Abstract

View articletitled, Morphology and cathodoluminescence of Li-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Gd</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msup xmlns=""><mi mathvariant="normal">:Eu</mi><mrow><mi mathvariant="normal">3+</mi></mrow></msup><mi xmlns="">,</mi></math> a red phosphor operating at low voltages

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Light emission from Er at the As-terminated Si(111) surface

P. G. Evans; J. A. Golovchenko

Appl. Phys. Lett. 77, 2165–2167 (2000) https://doi.org/10.1063/1.1315335

Abstract

View articletitled, Light emission from Er at the As-terminated Si(111) surface

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Elastic constants of cubic boron nitride films

R. Pastorelli; P. M. Ossi; C. E. Bottani; R. Checchetto; A. Miotello

Appl. Phys. Lett. 77, 2168–2170 (2000) https://doi.org/10.1063/1.1312201

Abstract

View articletitled, Elastic constants of cubic boron nitride films

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Hydrogen adsorption and phase transitions in fullerite

Y. Ye; C. C. Ahn; B. Fultz; J. J. Vajo; J. J. Zinck

Appl. Phys. Lett. 77, 2171–2173 (2000) https://doi.org/10.1063/1.1312857

Abstract

View articletitled, Hydrogen adsorption and phase transitions in fullerite

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Signature of GaN–AlN quantum dots by nonresonant Raman scattering

J. Gleize; J. Frandon; F. Demangeot; M. A. Renucci; C. Adelmann; B. Daudin; G. Feuillet; B. Damilano; N. Grandjean; J. Massies

Appl. Phys. Lett. 77, 2174–2176 (2000) https://doi.org/10.1063/1.1310171

Abstract

View articletitled, Signature of GaN–AlN quantum dots by nonresonant Raman scattering

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Improvement of the thermal stability of NiSi films by using a thin Pt interlayer

J. F. Liu; H. B. Chen; J. Y. Feng; J. Zhu

Appl. Phys. Lett. 77, 2177–2179 (2000) https://doi.org/10.1063/1.1313815

Abstract

View articletitled, Improvement of the thermal stability of NiSi films by using a thin Pt interlayer

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Photoluminescence properties of GaNP/GaP multiple quantum wells grown by gas source molecular beam epitaxy

H. P. Xin; C. W. Tu

Appl. Phys. Lett. 77, 2180–2182 (2000) https://doi.org/10.1063/1.1313813

Abstract

View articletitled, Photoluminescence properties of GaNP/GaP multiple quantum wells grown by gas source molecular beam epitaxy

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Coulomb-blockade spectroscopy on a small quantum dot in a parallel magnetic field

D. S. Duncan; D. Goldhaber-Gordon; R. M. Westervelt; K. D. Maranowski; A. C. Gossard

Appl. Phys. Lett. 77, 2183–2185 (2000) https://doi.org/10.1063/1.1313812

Abstract

View articletitled, Coulomb-blockade spectroscopy on a small quantum dot in a parallel magnetic field

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High-carbon concentrations at the silicon dioxide–silicon carbide interface identified by electron energy loss spectroscopy

K. C. Chang; N. T. Nuhfer; L. M. Porter; Q. Wahab

Appl. Phys. Lett. 77, 2186–2188 (2000) https://doi.org/10.1063/1.1314293

Abstract

View articletitled, High-carbon concentrations at the silicon dioxide–silicon carbide interface identified by electron energy loss spectroscopy

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Long wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy

E. Tournié; M.-A. Pinault; S. Vézian; J. Massies; O. Tottereau

Appl. Phys. Lett. 77, 2189–2191 (2000) https://doi.org/10.1063/1.1314295

Abstract

View articletitled, Long wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy

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Diffusion barrier and electrical characteristics of a self-aligned MgO layer obtained from a Cu(Mg) alloy film

W. H. Lee; H. L. Cho; B. S. Cho; J. Y. Kim; W. J. Nam; Y-S. Kim; W. G. Jung; H. Kwon; J. H. Lee; J. G. Lee; P. J. Reucroft; C. M. Lee; E. G. Lee

Appl. Phys. Lett. 77, 2192–2194 (2000) https://doi.org/10.1063/1.1314879

Abstract

View articletitled, Diffusion barrier and electrical characteristics of a self-aligned MgO layer obtained from a Cu(Mg) alloy film

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Growth of Si delta-doped GaN by metalorganic chemical-vapor deposition

G. Y. Zhao; M. Adachi; H. Ishikawa; T. Egawa; M. Umeno; T. Jimbo

Appl. Phys. Lett. 77, 2195–2197 (2000) https://doi.org/10.1063/1.1314883

Abstract

View articletitled, Growth of Si delta-doped GaN by metalorganic chemical-vapor deposition

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Photoelectric properties of organic polysilane containing carbazolyl side groups

Shinya Mimura; Hiroyoshi Naito; Takaaki Dohmaru; Yoshihiko Kanemitsu; Mikio Aramata

Appl. Phys. Lett. 77, 2198–2200 (2000) https://doi.org/10.1063/1.1314889

Abstract

View articletitled, Photoelectric properties of organic polysilane containing carbazolyl side groups

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Femtosecond dynamics and absorbance of self-organized InAs quantum dots emitting near 1.3 μm at room temperature

D. Birkedal; J. Bloch; J. Shah; L. N. Pfeiffer; K. West

Appl. Phys. Lett. 77, 2201–2203 (2000) https://doi.org/10.1063/1.1315347

Abstract

View articletitled, Femtosecond dynamics and absorbance of self-organized InAs quantum dots emitting near 1.3 μm at room temperature

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Room-temperature stimulated emission of excitons in ZnO/(Mg, Zn)O superlattices

A. Ohtomo; K. Tamura; M. Kawasaki; T. Makino; Y. Segawa; Z. K. Tang; G. K. L. Wong; Y. Matsumoto; H. Koinuma

Appl. Phys. Lett. 77, 2204–2206 (2000) https://doi.org/10.1063/1.1315340

Abstract

View articletitled, Room-temperature stimulated emission of excitons in ZnO/(Mg, Zn)O superlattices

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Boron penetration in $p^{+}$ ${polycrystalline-Si/Al}_{2} O_{3} / Si$ metal–oxide–semiconductor system

Dae-Gyu Park; Heung-Jae Cho; In-Seok Yeo; Jae-Sung Roh; Jeong-Mo Hwang

Appl. Phys. Lett. 77, 2207–2209 (2000) https://doi.org/10.1063/1.1315346

Abstract

View articletitled, Boron penetration in <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi>p</mi><mrow><mi>+</mi></mrow></msup></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">polycrystalline-Si/Al</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">Si</mi></math> metal–oxide–semiconductor system

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Exciton luminescence linewidth due to correlated compositional fluctuations in group-III nitride quantum wells

V. I. Litvinov

Appl. Phys. Lett. 77, 2210–2212 (2000) https://doi.org/10.1063/1.1313249

Abstract

View articletitled, Exciton luminescence linewidth due to correlated compositional fluctuations in group-III nitride quantum wells

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Direct lateral epitaxy overgrowth of GaN on sapphire substrates based on a sparse GaN nucleation technique

X. Zhang; R. R. Li; P. D. Dapkus; D. H. Rich

Appl. Phys. Lett. 77, 2213–2215 (2000) https://doi.org/10.1063/1.1312255

Abstract

View articletitled, Direct lateral epitaxy overgrowth of GaN on sapphire substrates based on a sparse GaN nucleation technique

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MAGNETISM AND SUPERCONDUCTIVITY

Low-temperature Kerr spectroscopy on half-metallic ${Sr}_{2} {FeMoO}_{6}$

U. Rüdiger; M. Rabe; G. Güntherodt; H. Q. Yin; R. I. Dass; J. B. Goodenough

Appl. Phys. Lett. 77, 2216–2218 (2000) https://doi.org/10.1063/1.1313810

Abstract

View articletitled, Low-temperature Kerr spectroscopy on half-metallic <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">FeMoO</mi><mrow><mi mathvariant="normal">6</mi></mrow></msub></math>

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Spin-dependent tunneling junctions with AlN and AlON barriers

Manish Sharma; Janice H. Nickel; Thomas C. Anthony; Shan X. Wang

Appl. Phys. Lett. 77, 2219–2221 (2000) https://doi.org/10.1063/1.1313808

Abstract

View articletitled, Spin-dependent tunneling junctions with AlN and AlON barriers

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Switching of the exchange bias in Fe/Cr(211) double-superlattice structures

S. G. E. te Velthuis; J. S. Jiang; G. P. Felcher

Appl. Phys. Lett. 77, 2222–2224 (2000) https://doi.org/10.1063/1.1313806

Abstract

View articletitled, Switching of the exchange bias in Fe/Cr(211) double-superlattice structures

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Nanostructured ${FePt:B}_{2} O_{3}$ thin films with perpendicular magnetic anisotropy

C. P. Luo; S. H. Liou; L. Gao; Y. Liu; D. J. Sellmyer

Appl. Phys. Lett. 77, 2225–2227 (2000) https://doi.org/10.1063/1.1314289

Abstract

View articletitled, Nanostructured <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">FePt:B</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> thin films with perpendicular magnetic anisotropy

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DIELECTRICS AND FERROELECTRICITY

Dielectric breakdown of ultrathin aluminum oxide films induced by scanning tunneling microscopy

N. P. Magtoto; C. Niu; B. M. Ekstrom; S. Addepalli; J. A. Kelber

Appl. Phys. Lett. 77, 2228–2230 (2000) https://doi.org/10.1063/1.1313816

Abstract

View articletitled, Dielectric breakdown of ultrathin aluminum oxide films induced by scanning tunneling microscopy

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Ferroelectric properties of ${Pb}_{1−3y/2} {La}_{y} ({Zr}_{0.4} {Ti}_{0.6}) O_{3}$ structures with La concentration gradients

I. Boerasu; L. Pintilie; M. Kosec

Appl. Phys. Lett. 77, 2231–2233 (2000) https://doi.org/10.1063/1.1313814

Abstract

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DEVICE PHYSICS

Low-frequency noise in cadmium-selenide thin-film transistors

M. Jamal Deen; S. L. Rumyantsev; D. Landheer; D.-X. Xu

Appl. Phys. Lett. 77, 2234–2236 (2000) https://doi.org/10.1063/1.1314887

Abstract

View articletitled, Low-frequency noise in cadmium-selenide thin-film transistors

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Quantum point contacts fabricated by nanoimprint lithography

Ingo Martini; Dominik Eisert; Martin Kamp; Lukas Worschech; Alfred Forchel; Johannes Koeth

Appl. Phys. Lett. 77, 2237–2239 (2000) https://doi.org/10.1063/1.1315343

Abstract

View articletitled, Quantum point contacts fabricated by nanoimprint lithography

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Multicolor infrared detection using two stacks of superlattice structures in a back-to-back configuration

M. C. Hsu; C. H. Kuan; S. Y. Wang

Appl. Phys. Lett. 77, 2240–2242 (2000) https://doi.org/10.1063/1.1310206

Abstract

View articletitled, Multicolor infrared detection using two stacks of superlattice structures in a back-to-back configuration

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INTERDISCIPLINARY AND GENERAL PHYSICS

Investigating the growth of localized defects in thin films using gold nanospheres

P. B. Mirkarimi; D. G. Stearns

Appl. Phys. Lett. 77, 2243–2245 (2000) https://doi.org/10.1063/1.1314291

Abstract

View articletitled, Investigating the growth of localized defects in thin films using gold nanospheres

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Direct calculation of permeability and permittivity for a left-handed metamaterial

D. R. Smith; D. C. Vier; N. Kroll; S. Schultz

Appl. Phys. Lett. 77, 2246–2248 (2000) https://doi.org/10.1063/1.1314884

Abstract

View articletitled, Direct calculation of permeability and permittivity for a left-handed metamaterial

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Multiple internal reflection infrared spectroscopy using two-prism coupling geometry: A convenient way for quantitative study of organic contamination on silicon wafers

Névine Rochat; Michel Olivier; Amal Chabli; Francis Conne; Georges Lefeuvre; Christophe Boll-Burdet

Appl. Phys. Lett. 77, 2249–2251 (2000) https://doi.org/10.1063/1.1314885

Abstract

View articletitled, Multiple internal reflection infrared spectroscopy using two-prism coupling geometry: A convenient way for quantitative study of organic contamination on silicon wafers

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Simultaneous determination of optical and acoustic thicknesses of protein layers using surface plasmon resonance spectroscopy and quartz crystal microweighing

Alexander Laschitsch; Bernhard Menges; Diethelm Johannsmann

Appl. Phys. Lett. 77, 2252–2254 (2000) https://doi.org/10.1063/1.1315338

Abstract

View articletitled, Simultaneous determination of optical and acoustic thicknesses of protein layers using surface plasmon resonance spectroscopy and quartz crystal microweighing

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Stability of the interface between indium-tin-oxide and poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) in polymer light-emitting diodes

M. P. de Jong; L. J. van IJzendoorn; M. J. A. de Voigt

Appl. Phys. Lett. 77, 2255–2257 (2000) https://doi.org/10.1063/1.1315344

Abstract

View articletitled, Stability of the interface between indium-tin-oxide and poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) in polymer light-emitting diodes

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ERRATA

Erratum: “Effect of size and roughness on light transmission in a ${Si/SiO}_{2}$ waveguide: Experiments and model” [Appl. Phys. Lett. 77, 1617 (2000)]

Kevin K. Lee; Desmond R. Lim; Hsin-Chiao Luan; Anuradha Agarwal; James Foresi; Lionel C. Kimerling

Appl. Phys. Lett. 77, 2258 (2000) https://doi.org/10.1063/1.1320897

View articletitled, Erratum: “Effect of size and roughness on light transmission in a <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si/SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> waveguide: Experiments and model” [Appl. Phys. Lett. 77, 1617 (2000)]

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

DEVICE PHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

ERRATA

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