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Volume 77, Issue 13

25 September 2000

Applied Physics Letters Cover Image for Volume 77, Issue 13

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
DEVICE PHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS

LASERS, OPTICS, AND OPTOELECTRONICS

Photonic band gaps in dusty plasma crystals

M. J. Keskinen; R. Fernsler

Appl. Phys. Lett. 77, 1925–1927 (2000) https://doi.org/10.1063/1.1312200

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Terahertz quantum cascade structures: Intra- versus interwell transition

J. Ulrich; R. Zobl; W. Schrenk; G. Strasser; K. Unterrainer; E. Gornik

Appl. Phys. Lett. 77, 1928–1930 (2000) https://doi.org/10.1063/1.1312864

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Performance and degradation of continuous-wave InGaN multiple-quantum-well laser diodes on epitaxially laterally overgrown GaN substrates

Michael Kneissl; David P. Bour; Linda Romano; Chris. G. Van de Walle; John E. Northrup; William S. Wong; David W. Treat; Mark Teepe; Tanya Schmidt; Noble M. Johnson

Appl. Phys. Lett. 77, 1931–1933 (2000) https://doi.org/10.1063/1.1312860

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All selective metalorganic vapor phase epitaxy grown buried-heterostructure laser diodes with selectively oxidized AlInAs current-confinement layer

Hyun-Chul Ko; Takahiro Nakamura; Tomoaki Koui; Naofumi Suzuki; Kazuhiro Shiba; Kenichi Kobayashi

Appl. Phys. Lett. 77, 1934–1936 (2000) https://doi.org/10.1063/1.1313374

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Waveguiding in planar photonic crystals

Marko Lončar; Dušan Nedeljković; Theodor Doll; Jelena Vučković; Axel Scherer; Thomas P. Pearsall

Appl. Phys. Lett. 77, 1937–1939 (2000) https://doi.org/10.1063/1.1311604

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Memorized polarization-dependent light scattering in rare-earth-ion-doped glass

Jianrong Qiu; P. G. Kazanski; Jinhai Si; K. Miura; T. Mitsuyu; K. Hirao; Alexander L. Gaeta

Appl. Phys. Lett. 77, 1940–1942 (2000) https://doi.org/10.1063/1.1311956

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Demonstration of near-field scanning photoreflectance spectroscopy

Charles Paulson; A. B. Ellis; Leon McCaughan; Brian Hawkins; Jingxi Sun; T. F. Kuech

Appl. Phys. Lett. 77, 1943–1945 (2000) https://doi.org/10.1063/1.1312253

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${GaN}_{0.011} P_{0.989}$ red light-emitting diodes directly grown on GaP substrates

H. P. Xin; R. J. Welty; C. W. Tu

Appl. Phys. Lett. 77, 1946–1948 (2000) https://doi.org/10.1063/1.1311957

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Semiconducting boron carbonitride nanostructures: Nanotubes and nanofibers

J. Yu; J. Ahn; S. F. Yoon; Q. Zhang; Rusli; B. Gan; K. Chew; M. B. Yu; X. D. Bai; E. G. Wang

Appl. Phys. Lett. 77, 1949–1951 (2000) https://doi.org/10.1063/1.1311953

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Determination of precipitate nucleation and growth rates from ultrasonic harmonic generation

John H. Cantrell; William T. Yost

Appl. Phys. Lett. 77, 1952–1954 (2000) https://doi.org/10.1063/1.1311951

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Shape transition of calcium islands formed by electron-stimulated desorption of fluorine from a ${CaF}_{2} (111)$ surface

M. Batzill; K. J. Snowdon

Appl. Phys. Lett. 77, 1955–1957 (2000) https://doi.org/10.1063/1.1311949

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Phonon lifetimes in bulk AlN and their temperature dependence

M. Kuball; J. M. Hayes; Ying Shi; J. H. Edgar

Appl. Phys. Lett. 77, 1958–1960 (2000) https://doi.org/10.1063/1.1311948

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Simple and high-yield method for synthesizing single-crystal GaN nanowires

C. C. Tang; S. S. Fan; H. Y. Dang; P. Li; Y. M. Liu

Appl. Phys. Lett. 77, 1961–1963 (2000) https://doi.org/10.1063/1.1312853

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Phase change in ${Ge}_{2} {Sb}_{2} {Te}_{5}$ films investigated by coherent phonon spectroscopy

M. Först; T. Dekorsy; C. Trappe; M. Laurenzis; H. Kurz; B. Béchevet

Appl. Phys. Lett. 77, 1964–1966 (2000) https://doi.org/10.1063/1.1312861

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Evolving shock-wave profiles measured in a silicon crystal by picosecond time-resolved x-ray diffraction

Yoichiro Hironaka; Akio Yazaki; Fumikazu Saito; Kazutaka G. Nakamura; Ken-ichi Kondo; Hisataka Takenaka; Masatake Yoshida

Appl. Phys. Lett. 77, 1967–1969 (2000) https://doi.org/10.1063/1.1313297

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Relation between short-range order and crystallization behavior in Zr-based amorphous alloys

L. Q. Xing; T. C. Hufnagel; J. Eckert; W. Löser; L. Schultz

Appl. Phys. Lett. 77, 1970–1972 (2000) https://doi.org/10.1063/1.1313255

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Chemical ordering around open-volume regions in bulk metallic glass ${Zr}_{52.5} {Ti}_{5} {Al}_{10} {Cu}_{17.9} {Ni}_{14.6}$

P. Asoka-Kumar; J. Hartley; R. Howell; P. A. Sterne; T. G. Nieh

Appl. Phys. Lett. 77, 1973–1975 (2000) https://doi.org/10.1063/1.1313367

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Accurate measurements of the intrinsic diffusivities of boron and phosphorus in silicon

Yaser M. Haddara; Brennan T. Folmer; Mark E. Law; Temel Buyuklimanli

Appl. Phys. Lett. 77, 1976–1978 (2000) https://doi.org/10.1063/1.1313248

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Insights into the structure of BN nanotubes

D. Golberg; Y. Bando; L. Bourgeois; K. Kurashima; T. Sato

Appl. Phys. Lett. 77, 1979–1981 (2000) https://doi.org/10.1063/1.1313251

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Piezoelectric-induced quantum-confined Stark effect in self-assembled InAs quantum dots grown on (N11) GaAs substrates

S. Sanguinetti; M. Gurioli; E. Grilli; M. Guzzi; M. Henini

Appl. Phys. Lett. 77, 1982–1984 (2000) https://doi.org/10.1063/1.1311814

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Microstructure of ${BaRuO}_{3}$ thin films grown on (001) ${SrTiO}_{3}$

W. Tian; X. Q. Pan; M. K. Lee; C. B. Eom

Appl. Phys. Lett. 77, 1985–1987 (2000) https://doi.org/10.1063/1.1289059

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Preparation of air-stable, low recombination velocity Si(111) surfaces through alkyl termination

William J. Royea; Agnes Juang; Nathan S. Lewis

Appl. Phys. Lett. 77, 1988–1990 (2000) https://doi.org/10.1063/1.1312203

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Fabrication of extremely narrow metal wires

D. Natelson; R. L. Willett; K. W. West; L. N. Pfeiffer

Appl. Phys. Lett. 77, 1991–1993 (2000) https://doi.org/10.1063/1.1312256

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Local capacitance measurements on InAs dot-covered GaAs surfaces by scanning capacitance microscopy

H. Yamamoto; T. Takahashi; I. Kamiya

Appl. Phys. Lett. 77, 1994–1996 (2000) https://doi.org/10.1063/1.1312257

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Athermal annealing of phosphorus-ion-implanted silicon

J. Grun; R. P. Fischer; M. Peckerar; C. L. Felix; B. C. Covington; W. J. DeSisto; D. W. Donnelly; A. Ting; C. K. Manka

Appl. Phys. Lett. 77, 1997–1999 (2000) https://doi.org/10.1063/1.1312259

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Influence of carbon incorporation on dopant surface segregation in molecular-beam epitaxial growth of silicon

H. J. Osten; G. Lippert; J. P. Liu; D. Krüger

Appl. Phys. Lett. 77, 2000–2002 (2000) https://doi.org/10.1063/1.1312258

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Determination of the energy levels of a phosphorescent guest in organic light emitting devices

I. G. Hill; A. J. Mäkinen; Z. H. Kafafi

Appl. Phys. Lett. 77, 2003–2005 (2000) https://doi.org/10.1063/1.1311952

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Influence of ${sp}^{2}$ clusters on the field emission properties of amorphous carbon thin films

J. D. Carey; R. D. Forrest; R. U. A. Khan; S. R. P. Silva

Appl. Phys. Lett. 77, 2006–2008 (2000) https://doi.org/10.1063/1.1312202

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Electronic properties of ${In}_{2} O_{3}$ surfaces

Andreas Klein

Appl. Phys. Lett. 77, 2009–2011 (2000) https://doi.org/10.1063/1.1312199

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Influence of crystal polarity on the properties of Pt/GaN Schottky diodes

Uwe Karrer; Oliver Ambacher; Martin Stutzmann

Appl. Phys. Lett. 77, 2012–2014 (2000) https://doi.org/10.1063/1.1313275

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Quantum cables as transport spectroscope for quasi-one-dimensional density of states of cylindrical quantum wires

Z. Y. Zeng; Y. Xiang; L. D. Zhang

Appl. Phys. Lett. 77, 2015–2017 (2000) https://doi.org/10.1063/1.1313247

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Ab initio modeling of boron clustering in silicon

Xiang-Yang Liu; Wolfgang Windl; Michael P. Masquelier

Appl. Phys. Lett. 77, 2018–2020 (2000) https://doi.org/10.1063/1.1313253

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Field emission from cobalt-containing amorphous carbon composite films heat-treated in an acetylene ambient

Y. J. Li; S. P. Lau; B. K. Tay; Z. Sun; G. Y. Chen; J. S. Chen; X. Z. Ding; X. Shi

Appl. Phys. Lett. 77, 2021–2023 (2000) https://doi.org/10.1063/1.1313252

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Valence band offset and hole injection at the 4H-, ${6H-SiC/SiO}_{2}$ interfaces

V. V. Afanas’ev; A. Stesmans

Appl. Phys. Lett. 77, 2024–2026 (2000) https://doi.org/10.1063/1.1290492

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Aluminum-seeded growth of microcrystalline Si thin film onto ${SnO}_{2}$ substrate

Chang Hyun Lee; Koeng Su Lim

Appl. Phys. Lett. 77, 2027–2029 (2000) https://doi.org/10.1063/1.1312859

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MAGNETISM AND SUPERCONDUCTIVITY

Growth-induced uniaxial anisotropy in grazing-incidence deposited magnetic films

Sebastiaan van Dijken; Giovanni Di Santo; Bene Poelsema

Appl. Phys. Lett. 77, 2030–2032 (2000) https://doi.org/10.1063/1.1312865

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Flux pinning in ternary ${(Nd–Eu–Gd)Ba}_{2} {Cu}_{3} O_{7−δ} :$ Optimization for the highest pinning

A. K. Pradhan; M. Muralidhar; Y. Feng; M. Murakami; K. Nakao; N. Koshizuka

Appl. Phys. Lett. 77, 2033–2035 (2000) https://doi.org/10.1063/1.1312863

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Diode-free magnetic random access memory using spin-dependent tunneling effect

Frank Z. Wang

Appl. Phys. Lett. 77, 2036–2038 (2000) https://doi.org/10.1063/1.1313345

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Anisotropy measurements in mesoscopic magnets by magneto-optical torque

G. Armelles; J. L. Costa-Krämer; J. I. Martin; J. V. Anguita; J. L. Vicent

Appl. Phys. Lett. 77, 2039–2041 (2000) https://doi.org/10.1063/1.1310212

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DIELECTRICS AND FERROELECTRICITY

Nanometer-scale observation of ferroelectric domains using an apertureless near-field optical microscope

X. K. Orlik; M. Labardi; M. Allegrini

Appl. Phys. Lett. 77, 2042–2044 (2000) https://doi.org/10.1063/1.1311947

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Capacitance and admittance spectroscopy analysis of hydrogen-degraded ${Pt/(Ba, Sr)TiO}_{3} /Pt$ thin-film capacitors

R. Liedtke; M. Grossmann; R. Waser

Appl. Phys. Lett. 77, 2045–2047 (2000) https://doi.org/10.1063/1.1311946

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Direct observation of local ferroelectric phase transitions in ${Ba}_{x} {Sr}_{1−x} {TiO}_{3}$ thin films

Oleg Tikhomirov; Hua Jiang; Jeremy Levy

Appl. Phys. Lett. 77, 2048–2050 (2000) https://doi.org/10.1063/1.1311950

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Direct x-ray synchrotron imaging of strains at 180° domain walls in congruent ${LiNbO}_{3}$ and ${LiTaO}_{3}$ crystals

Sungwon Kim; Venkatraman Gopalan; B. Steiner

Appl. Phys. Lett. 77, 2051–2053 (2000) https://doi.org/10.1063/1.1312854

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Study on electron trapping and interface states of various gate dielectric materials in 4H–SiC metal-oxide-semiconductor capacitors

Won-ju Cho; Ryoji Kosugi; Junji Senzaki; Kenji Fukuda; Kazuo Arai; Seiji Suzuki

Appl. Phys. Lett. 77, 2054–2056 (2000) https://doi.org/10.1063/1.1312862

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DEVICE PHYSICS

Optimum charge-carrier mobility for a polymer light-emitting diode

P. W. M. Blom; M. C. J. M. Vissenberg; J. N. Huiberts; H. C. F. Martens; H. F. M. Schoo

Appl. Phys. Lett. 77, 2057–2059 (2000) https://doi.org/10.1063/1.1313254

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AlGaAs hot-electron optical modulator

B. S. Ryvkin; A. C. Walker; E. A. Avrutin

Appl. Phys. Lett. 77, 2060–2062 (2000) https://doi.org/10.1063/1.1313250

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INTERDISCIPLINARY AND GENERAL PHYSICS

Using convective flow splitting for the direct printing of fine copper lines

Tanja Cuk; Sandra M. Troian; Cheong Min Hong; Sigurd Wagner

Appl. Phys. Lett. 77, 2063–2065 (2000) https://doi.org/10.1063/1.1311954

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Perturbation theory for surface-profile imaging with a capacitive probe

A. Garcı́a-Valenzuela; N. C. Bruce; D. Kouznetsov

Appl. Phys. Lett. 77, 2066–2068 (2000) https://doi.org/10.1063/1.1312852

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Sol-gel coated glass cells for spin-exchange polarized ${}^{3}{He}$

Ming F. Hsu; G. D. Cates; I. Kominis; I. A. Aksay; D. M. Dabbs

Appl. Phys. Lett. 77, 2069–2071 (2000) https://doi.org/10.1063/1.1312855

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