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LASERS, OPTICS, AND OPTOELECTRONICS

Low-threshold and high power $λ∼9.0 μ m$ quantum cascade lasers operating at room temperature

A. Matlis; S. Slivken; A. Tahraoui; K. J. Luo; J. Diaz; Z. Wu; A. Rybaltowski; C. Jelen; M. Razeghi

Appl. Phys. Lett. 77, 1741–1743 (2000) https://doi.org/10.1063/1.1310632

Abstract

View articletitled, Low-threshold and high power <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">λ∼9.0 μ</mtext><mi mathvariant="normal" xmlns="">m</mi></math> quantum cascade lasers operating at room temperature

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Resonant-cavity InGaN quantum-well blue light-emitting diodes

Y.-K. Song; M. Diagne; H. Zhou; A. V. Nurmikko; R. P. Schneider, Jr.; T. Takeuchi

Appl. Phys. Lett. 77, 1744–1746 (2000) https://doi.org/10.1063/1.1310625

Abstract

View articletitled, Resonant-cavity InGaN quantum-well blue light-emitting diodes

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Thin-film-induced index change and channel waveguiding in epitaxial GaN films

Euisong Kim; Byounghee Lee; Ahmed Nahhas; Hong Koo Kim

Appl. Phys. Lett. 77, 1747–1749 (2000) https://doi.org/10.1063/1.1311315

Abstract

View articletitled, Thin-film-induced index change and channel waveguiding in epitaxial GaN films

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High-brightness organic double-quantum-well electroluminescent devices

Jingsong Huang; Kaixia Yang; Shiyong Liu; Hongjin Jiang

Appl. Phys. Lett. 77, 1750–1752 (2000) https://doi.org/10.1063/1.1311313

Abstract

View articletitled, High-brightness organic double-quantum-well electroluminescent devices

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Nonlinear processes responsible for nondegenerate four-wave mixing in quantum-dot optical amplifiers

Tomoyuki Akiyama; Osamu Wada; Haruhiko Kuwatsuka; Takashi Simoyama; Yoshiaki Nakata; Kohki Mukai; Mitsuru Sugawara; Hiroshi Ishikawa

Appl. Phys. Lett. 77, 1753–1755 (2000) https://doi.org/10.1063/1.1311319

Abstract

View articletitled, Nonlinear processes responsible for nondegenerate four-wave mixing in quantum-dot optical amplifiers

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Short-cavity, edge-emitting lasers with high-reflectance, dielectric mirrors

J. L. Fitz; S. C. Horst; D. S. Hinkel; H. Turk

Appl. Phys. Lett. 77, 1756–1758 (2000) https://doi.org/10.1063/1.1311322

Abstract

View articletitled, Short-cavity, edge-emitting lasers with high-reflectance, dielectric mirrors

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Third-order nonlinear optical properties of an expanded porphyrin cadmium complex

Wenfang Sun; Clare C. Byeon; Chris M. Lawson; Gary M. Gray; Duoyuan Wang

Appl. Phys. Lett. 77, 1759–1761 (2000) https://doi.org/10.1063/1.1311321

Abstract

View articletitled, Third-order nonlinear optical properties of an expanded porphyrin cadmium complex

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Differential electronic gating: A method to measure the shape of short THz pulses with a poorly defined trigger signal

J. N. Hovenier; R. W. van Es; T. O. Klaassen; W. Th. Wenckebach; M. Krätschmer; F. Klappenberger; E. Schomburg; S. Winnerl; G. M. H. Knippels; A. F. G. van der Meer

Appl. Phys. Lett. 77, 1762–1764 (2000) https://doi.org/10.1063/1.1311601

Abstract

View articletitled, Differential electronic gating: A method to measure the shape of short THz pulses with a poorly defined trigger signal

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Optical properties of spontaneous lateral composition modulation in AlAs/InAs short-period superlattices

S. Francoeur; Yong Zhang; A. G. Norman; F. Alsina; A. Mascarenhas; J. L. Reno; E. D. Jones; S. R. Lee; D. M. Follstaedt

Appl. Phys. Lett. 77, 1765–1767 (2000) https://doi.org/10.1063/1.1311598

Abstract

View articletitled, Optical properties of spontaneous lateral composition modulation in AlAs/InAs short-period superlattices

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Micro-optomechanical sensor for optical connection in the near field

B. Belier; A. Santoso; J. Bonnafe; L. Nicu; P. Temple-Boyer; C. Bergaud

Appl. Phys. Lett. 77, 1768–1770 (2000) https://doi.org/10.1063/1.1311602

Abstract

View articletitled, Micro-optomechanical sensor for optical connection in the near field

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Chaos in an additive-pulse mode-locked laser

E. J. Mozdy; C. R. Pollock

Appl. Phys. Lett. 77, 1771–1773 (2000) https://doi.org/10.1063/1.1311816

Abstract

View articletitled, Chaos in an additive-pulse mode-locked laser

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Magneto-optical disk properties enhanced by a nonmagnetic mask layer

J. H. Kim; D. Buechel; T. Nakano; J. Tominaga; N. Atoda; H. Fuji; Y. Yamakawa

Appl. Phys. Lett. 77, 1774–1776 (2000) https://doi.org/10.1063/1.1290489

Abstract

View articletitled, Magneto-optical disk properties enhanced by a nonmagnetic mask layer

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Determination of internal optical mode loss of semiconductor laser diodes

Linzhang Wu

Appl. Phys. Lett. 77, 1777–1779 (2000) https://doi.org/10.1063/1.1310208

Abstract

View articletitled, Determination of internal optical mode loss of semiconductor laser diodes

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PLASMAS AND ELECTRICAL DISCHARGES

Influence of electrode-size effects on plasma sheath expansion

Han S. Uhm; Gon H. Kim; Young W. Kim; Gun. W. Kim; Seung H. Han; Mun P. Hong

Appl. Phys. Lett. 77, 1780–1782 (2000) https://doi.org/10.1063/1.1311318

Abstract

View articletitled, Influence of electrode-size effects on plasma sheath expansion

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Very thin insulating layer formed by low-energy Ar-beam bombardment in the surface region of undoped hydrogenated amorphous silicon

R. Durny; E. Pincik; V. Nadazdy; M. Jergel; J. Shimizu; M. Kumeda; T. Shimizu

Appl. Phys. Lett. 77, 1783–1785 (2000) https://doi.org/10.1063/1.1310634

Abstract

View articletitled, Very thin insulating layer formed by low-energy Ar-beam bombardment in the surface region of undoped hydrogenated amorphous silicon

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Scanning reflection electron microscopy study of surface defects in GaN films formed by epitaxial lateral overgrowth

Heiji Watanabe; Naotaka Kuroda; Haruo Sunakawa; Akira Usui

Appl. Phys. Lett. 77, 1786–1788 (2000) https://doi.org/10.1063/1.1310631

Abstract

View articletitled, Scanning reflection electron microscopy study of surface defects in GaN films formed by epitaxial lateral overgrowth

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Strain-induced material intermixing of InAs quantum dots in GaAs

M. O. Lipinski; H. Schuler; O. G. Schmidt; K. Eberl; N. Y. Jin-Phillipp

Appl. Phys. Lett. 77, 1789–1791 (2000) https://doi.org/10.1063/1.1311314

Abstract

View articletitled, Strain-induced material intermixing of InAs quantum dots in GaAs

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Characterizing mechanical resonators by means of a scanning acoustic force microscope

F. Sthal; R. Bourquin

Appl. Phys. Lett. 77, 1792–1794 (2000) https://doi.org/10.1063/1.1311317

Abstract

View articletitled, Characterizing mechanical resonators by means of a scanning acoustic force microscope

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Plasma-induced damage to n-type GaN

H. W. Choi; S. J. Chua; A. Raman; J. S. Pan; A. T. S. Wee

Appl. Phys. Lett. 77, 1795–1797 (2000) https://doi.org/10.1063/1.1311605

Abstract

View articletitled, Plasma-induced damage to n-type GaN

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Detection of terahertz radiation from longitudinal optical phonon–plasmon coupling modes in InSb film using an ultrabroadband photoconductive antenna

Ping Gu; Masahiko Tani; Kiyomi Sakai; T.-R. Yang

Appl. Phys. Lett. 77, 1798–1800 (2000) https://doi.org/10.1063/1.1311609

Abstract

View articletitled, Detection of terahertz radiation from longitudinal optical phonon–plasmon coupling modes in InSb film using an ultrabroadband photoconductive antenna

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Uniaxial locked epitaxy of ZnO on the $a$ face of sapphire

P. Fons; K. Iwata; A. Yamada; K. Matsubara; S. Niki; K. Nakahara; T. Tanabe; H. Takasu

Appl. Phys. Lett. 77, 1801–1803 (2000) https://doi.org/10.1063/1.1311603

Abstract

View articletitled, Uniaxial locked epitaxy of ZnO on the <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">a</mi></math> face of sapphire

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Two-step growth of high-quality GaN by hydride vapor-phase epitaxy

P. R. Tavernier; E. V. Etzkorn; Y. Wang; D. R. Clarke

Appl. Phys. Lett. 77, 1804–1806 (2000) https://doi.org/10.1063/1.1311600

Abstract

View articletitled, Two-step growth of high-quality GaN by hydride vapor-phase epitaxy

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Aligned ${CN}_{x}$ nanotubes by pyrolysis of ferrocene/ $C_{60}$ under ${NH}_{3}$ atmosphere

Wei-Qiang Han; Philipp Kohler-Redlich; Torsten Seeger; Frank Ernst; Manfred Rühle; Nicole Grobert; Wen-Kuang Hsu; Bao-He Chang; Yan-Qiu Zhu; Harold W. Kroto; David R. M. Walton; Mauricio Terrones; Humberto Terrones

Appl. Phys. Lett. 77, 1807–1809 (2000) https://doi.org/10.1063/1.1311813

Abstract

View articletitled, Aligned <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CN</mi><mrow><mi>x</mi></mrow></msub></math> nanotubes by pyrolysis of ferrocene/<math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mn>60</mn></mrow></msub></math> under <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">NH</mi><mrow><mn>3</mn></mrow></msub></math> atmosphere

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Determination of thermal conductivity of natural silicate melts

R. Büttner; B. Zimanowski; C. Lenk; A. Koopmann; V. Lorenz

Appl. Phys. Lett. 77, 1810–1812 (2000) https://doi.org/10.1063/1.1311815

Abstract

View articletitled, Determination of thermal conductivity of natural silicate melts

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Phonons and exciton recombination in CdSe/ZnSe self-assembled quantum dots

H. Rho; L. M. Robinson; L. M. Smith; Howard E. Jackson; S. Lee; M. Dobrowolska; J. K. Furdyna

Appl. Phys. Lett. 77, 1813–1815 (2000) https://doi.org/10.1063/1.1311393

Abstract

View articletitled, Phonons and exciton recombination in CdSe/ZnSe self-assembled quantum dots

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Room- and low-temperature voltage tunable electroluminescence from a single layer of silicon quantum dots in between two thin ${SiO}_{2}$ layers

P. Photopoulos; A. G. Nassiopoulou

Appl. Phys. Lett. 77, 1816–1818 (2000) https://doi.org/10.1063/1.1290603

Abstract

View articletitled, Room- and low-temperature voltage tunable electroluminescence from a single layer of silicon quantum dots in between two thin <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> layers

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Structural and chemical characterization of free-standing GaN films separated from sapphire substrates by laser lift-off

E. A. Stach; M. Kelsch; E. C. Nelson; W. S. Wong; T. Sands; N. W. Cheung

Appl. Phys. Lett. 77, 1819–1821 (2000) https://doi.org/10.1063/1.1309030

Abstract

View articletitled, Structural and chemical characterization of free-standing GaN films separated from sapphire substrates by laser lift-off

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Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition

T. Brunhes; P. Boucaud; S. Sauvage; F. Aniel; J.-M. Lourtioz; C. Hernandez; Y. Campidelli; O. Kermarrec; D. Bensahel; G. Faini; I. Sagnes

Appl. Phys. Lett. 77, 1822–1824 (2000) https://doi.org/10.1063/1.1308526

Abstract

View articletitled, Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Distinguishing between interface dipoles and band bending at metal/tris-(8-hydroxyquinoline) aluminum interfaces

I. G. Hill; A. J. Mäkinen; Z. H. Kafafi

Appl. Phys. Lett. 77, 1825–1827 (2000) https://doi.org/10.1063/1.1310637

Abstract

View articletitled, Distinguishing between interface dipoles and band bending at metal/tris-(8-hydroxyquinoline) aluminum interfaces

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Contribution of ions and radicals in etching of ${Si}_{1−x} {Ge}_{x}$ epitaxial films using an electron-cyclotron-resonance chlorine plasma

Hajime Takeuchi; Takashi Matsuura; Junichi Murota

Appl. Phys. Lett. 77, 1828–1830 (2000) https://doi.org/10.1063/1.1310624

Abstract

View articletitled, Contribution of ions and radicals in etching of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi>x</mi></mrow></msub></math> epitaxial films using an electron-cyclotron-resonance chlorine plasma

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The role of dc current limitations in Fowler–Nordheim electron emission from carbon films

J. B. Cui; K. B. K. Teo; J. T. H. Tsai; J. Robertson; W. I. Milne

Appl. Phys. Lett. 77, 1831–1833 (2000) https://doi.org/10.1063/1.1310628

Abstract

View articletitled, The role of dc current limitations in Fowler–Nordheim electron emission from carbon films

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Ab initio energetics of boron-interstitial clusters in crystalline Si

Thomas J. Lenosky; Babak Sadigh; Silva K. Theiss; Maria-Jose Caturla; Tomas Diaz de la Rubia

Appl. Phys. Lett. 77, 1834–1836 (2000) https://doi.org/10.1063/1.1310627

Abstract

View articletitled, Ab initio energetics of boron-interstitial clusters in crystalline Si

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Amorphic diamond/silicon semiconductor heterojunctions exhibiting photoconductive characteristics

F. Davanloo; C. B. Collins; K. J. Koivusaari; S. Leppävuori

Appl. Phys. Lett. 77, 1837–1839 (2000) https://doi.org/10.1063/1.1311312

Abstract

View articletitled, Amorphic diamond/silicon semiconductor heterojunctions exhibiting photoconductive characteristics

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Effects of nitric-oxide-plasma treatment on the electrical properties of tetraethylorthosilicate-deposited silicon dioxides on strained- ${Si}_{1−x} {Ge}_{x}$ layers

B. Senapati; S. K. Samanta; S. Maikap; L. K. Bera; C. K. Maiti

Appl. Phys. Lett. 77, 1840–1842 (2000) https://doi.org/10.1063/1.1311311

Abstract

View articletitled, Effects of nitric-oxide-plasma treatment on the electrical properties of tetraethylorthosilicate-deposited silicon dioxides on strained-<math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi>x</mi></mrow></msub></math> layers

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Direct determination of electron effective mass in GaNAs/GaAs quantum wells

P. N. Hai; W. M. Chen; I. A. Buyanova; H. P. Xin; C. W. Tu

Appl. Phys. Lett. 77, 1843–1845 (2000) https://doi.org/10.1063/1.1311324

Abstract

View articletitled, Direct determination of electron effective mass in GaNAs/GaAs quantum wells

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Growth of hexagonal GaN on Si(111) coated with a thin flat SiC buffer layer

D. Wang; Y. Hiroyama; M. Tamura; M. Ichikawa; S. Yoshida

Appl. Phys. Lett. 77, 1846–1848 (2000) https://doi.org/10.1063/1.1311607

Abstract

View articletitled, Growth of hexagonal GaN on Si(111) coated with a thin flat SiC buffer layer

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Electric-field dependence of mobile proton-induced switching in protonated gate oxide field-effect transistors

R. A. B. Devine

Appl. Phys. Lett. 77, 1849–1851 (2000) https://doi.org/10.1063/1.1311608

Abstract

View articletitled, Electric-field dependence of mobile proton-induced switching in protonated gate oxide field-effect transistors

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Simultaneous measurement of electron and hole mobilities in polymer light-emitting diodes

H. C. F. Martens; J. N. Huiberts; P. W. M. Blom

Appl. Phys. Lett. 77, 1852–1854 (2000) https://doi.org/10.1063/1.1311599

Abstract

View articletitled, Simultaneous measurement of electron and hole mobilities in polymer light-emitting diodes

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High figure of merit in partially filled ytterbium skutterudite materials

G. S. Nolas; M. Kaeser; R. T. Littleton, IV; T. M. Tritt

Appl. Phys. Lett. 77, 1855–1857 (2000) https://doi.org/10.1063/1.1311597

Abstract

View articletitled, High figure of merit in partially filled ytterbium skutterudite materials

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GaN homoepitaxy by metalorganic chemical-vapor deposition on free-standing GaN substrates

C. R. Miskys; M. K. Kelly; O. Ambacher; G. Martı́nez-Criado; M. Stutzmann

Appl. Phys. Lett. 77, 1858–1860 (2000) https://doi.org/10.1063/1.1311596

Abstract

View articletitled, GaN homoepitaxy by metalorganic chemical-vapor deposition on free-standing GaN substrates

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Nanocrystalline gallium nitride thin films

Nisha Preschilla A.; S. Major; Nigvendra Kumar; I. Samajdar; R. S. Srinivasa

Appl. Phys. Lett. 77, 1861–1863 (2000) https://doi.org/10.1063/1.1311595

Abstract

View articletitled, Nanocrystalline gallium nitride thin films

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Coherent population transfer in coupled semiconductor quantum dots

Ulrich Hohenester; Filippo Troiani; Elisa Molinari; Giovanna Panzarini; Chiara Macchiavello

Appl. Phys. Lett. 77, 1864–1866 (2000) https://doi.org/10.1063/1.1311820

Abstract

View articletitled, Coherent population transfer in coupled semiconductor quantum dots

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Examination of tunnel junctions in the AlGaN/GaN system: Consequences of polarization charge

Madhusudan Singh; Yifei Zhang; Jasprit Singh; Umesh Mishra

Appl. Phys. Lett. 77, 1867–1869 (2000) https://doi.org/10.1063/1.1311818

Abstract

View articletitled, Examination of tunnel junctions in the AlGaN/GaN system: Consequences of polarization charge

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MAGNETISM AND SUPERCONDUCTIVITY

Reliability of normal-state current–voltage characteristics as an indicator of tunnel-junction barrier quality

B. J. Jönsson-Åkerman; R. Escudero; C. Leighton; S. Kim; Ivan K. Schuller; D. A. Rabson

Appl. Phys. Lett. 77, 1870–1872 (2000) https://doi.org/10.1063/1.1310633

Abstract

View articletitled, Reliability of normal-state current–voltage characteristics as an indicator of tunnel-junction barrier quality

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Magnetoresistance effect and interlayer coupling of (Ga, Mn)As trilayer structures

D. Chiba; N. Akiba; F. Matsukura; Y. Ohno; H. Ohno

Appl. Phys. Lett. 77, 1873–1875 (2000) https://doi.org/10.1063/1.1310626

Abstract

View articletitled, Magnetoresistance effect and interlayer coupling of (Ga, Mn)As trilayer structures

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Particle sizing of magnetite-based magnetic fluid using atomic force microscopy: A comparative study with electron microscopy and birefringence

B. M. Lacava; R. B. Azevedo; L. P. Silva; Z. G. M. Lacava; K. Skeff Neto; N. Buske; A. F. Bakuzis; P. C. Morais

Appl. Phys. Lett. 77, 1876–1878 (2000) https://doi.org/10.1063/1.1311320

Abstract

View articletitled, Particle sizing of magnetite-based magnetic fluid using atomic force microscopy: A comparative study with electron microscopy and birefringence

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A giant magnetoresistance sensor for high magnetic field measurements

F. B. Mancoff; J. Hunter Dunn; B. M. Clemens; R. L. White

Appl. Phys. Lett. 77, 1879–1881 (2000) https://doi.org/10.1063/1.1311316

Abstract

View articletitled, A giant magnetoresistance sensor for high magnetic field measurements

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Sensitive Josephson magnetometry of flux quantization in a normal conducting hole in a narrow ${YBa}_{2} {Cu}_{3} O_{7}$ line

H.-J. Barthelmess; S. Krey; S. Ostertun; M. Schilling

Appl. Phys. Lett. 77, 1882–1884 (2000) https://doi.org/10.1063/1.1290493

Abstract

View articletitled, Sensitive Josephson magnetometry of flux quantization in a normal conducting hole in a narrow <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">YBa</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">7</mi></mrow></msub></math> line

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DIELECTRICS AND FERROELECTRICITY

Variation in the fixed charge density of ${SiO}_{x} / {ZrO}_{2}$ gate dielectric stacks during postdeposition oxidation

M. Houssa; V. V. Afanas’ev; A. Stesmans; M. M. Heyns

Appl. Phys. Lett. 77, 1885–1887 (2000) https://doi.org/10.1063/1.1310635

Abstract

View articletitled, Variation in the fixed charge density of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi>x</mi></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">ZrO</mi><mrow><mn>2</mn></mrow></msub></math> gate dielectric stacks during postdeposition oxidation

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Dielectric dispersion and critical behavior in relaxor ferroelectric ${Pb(Mg}_{1/3} {Nb}_{2/3} {)O}_{3} {–PbTiO}_{3}$

A. A. Bokov; Z.-G. Ye

Appl. Phys. Lett. 77, 1888–1890 (2000) https://doi.org/10.1063/1.1310629

Abstract

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Fabrication of acoustic superlattice ${LiNbO}_{3}$ by pulsed current induction and its application for crossed field ultrasonic excitation

Zhi-liang Wan; Quan Wang; Yuan-xin Xi; Yan-qing Lu; Yong-yuan Zhu; Nai-ben Ming

Appl. Phys. Lett. 77, 1891–1893 (2000) https://doi.org/10.1063/1.1311817

Abstract

View articletitled, Fabrication of acoustic superlattice <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LiNbO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> by pulsed current induction and its application for crossed field ultrasonic excitation

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Correlation between switching and fatigue in ${PbZr}_{0.3} {Ti}_{0.7} O_{3}$ thin films

M. Grossmann; D. Bolten; O. Lohse; U. Boettger; R. Waser; S. Tiedke

Appl. Phys. Lett. 77, 1894–1896 (2000) https://doi.org/10.1063/1.1290154

Abstract

View articletitled, Correlation between switching and fatigue in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">PbZr</mi><mrow><mi mathvariant="normal">0.3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mi mathvariant="normal">0.7</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> thin films

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DEVICE PHYSICS

Transport and optical modeling of organic light-emitting diodes

N. Tessler

Appl. Phys. Lett. 77, 1897–1899 (2000) https://doi.org/10.1063/1.1310630

Abstract

View articletitled, Transport and optical modeling of organic light-emitting diodes

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Back illuminated AlGaN solar-blind photodetectors

D. J. H. Lambert; M. M. Wong; U. Chowdhury; C. Collins; T. Li; H. K. Kwon; B. S. Shelton; T. G. Zhu; J. C. Campbell; R. D. Dupuis

Appl. Phys. Lett. 77, 1900–1902 (2000) https://doi.org/10.1063/1.1311821

Abstract

View articletitled, Back illuminated AlGaN solar-blind photodetectors

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Modeling of a GaN-based light-emitting diode for uniform current spreading

Hyunsoo Kim; Ji-Myon Lee; Chul Huh; Sang-Woo Kim; Dong-Joon Kim; Seong-Ju Park; Hyunsang Hwang

Appl. Phys. Lett. 77, 1903–1904 (2000) https://doi.org/10.1063/1.1311819

Abstract

View articletitled, Modeling of a GaN-based light-emitting diode for uniform current spreading

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INTERDISCIPLINARY AND GENERAL PHYSICS

Flexible piezoelectric motor based on an acoustic fiber

Riccardo Carotenuto; Antonio Iula; Giosuè Caliano; Nicola Lamberti

Appl. Phys. Lett. 77, 1905–1907 (2000) https://doi.org/10.1063/1.1310636

Abstract

View articletitled, Flexible piezoelectric motor based on an acoustic fiber

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Influence of the heterojunction on the field emission from tetrahedral amorphous carbon on Si

N. L. Rupesinghe; M. Chhowalla; G. A. J. Amaratunga; P. Weightman; D. Martin; P. Unsworth; J. Murray

Appl. Phys. Lett. 77, 1908–1910 (2000) https://doi.org/10.1063/1.1310623

Abstract

View articletitled, Influence of the heterojunction on the field emission from tetrahedral amorphous carbon on Si

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Nondestructive positron-lifetime measurements during fatigue of austenitic stainless steel using a mobile positron beam

Andrea Barbieri; Sabine Hansen-Ilzhöfer; Achim Ilzhöfer; Uwe Holzwarth

Appl. Phys. Lett. 77, 1911–1913 (2000) https://doi.org/10.1063/1.1311323

Abstract

View articletitled, Nondestructive positron-lifetime measurements during fatigue of austenitic stainless steel using a mobile positron beam

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

DEVICE PHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

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