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Volume 77, Issue 10

4 September 2000

Applied Physics Letters Cover Image for Volume 77, Issue 10

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
DEVICE PHYSICS
APPLIED BIOPHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS
ERRATA

LASERS, OPTICS, AND OPTOELECTRONICS

Probing the near fields of the super-resolution near-field optical structure

Din Ping Tsai; Wei Chih Lin

Appl. Phys. Lett. 77, 1413–1415 (2000) https://doi.org/10.1063/1.1290692

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Electroluminescence from semitransparent Au film/nanometer ${SiO}_{2} / nanometer$ Si/nanometer ${SiO}_{2} {/n}^{+} - Si$ structure under reverse bias

C. L. Heng; Y. K. Sun; S. T. Wang; Y. Chen; Y. P. Qiao; B. R. Zhang; Z. C. Ma; W. H. Zong; G. G. Qin

Appl. Phys. Lett. 77, 1416–1418 (2000) https://doi.org/10.1063/1.1290597

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Highly efficient GaInAs/(Al)GaAs quantum-dot lasers based on a single active layer versus 980 nm high-power quantum-well lasers

F. Klopf; J. P. Reithmaier; A. Forchel

Appl. Phys. Lett. 77, 1419–1421 (2000) https://doi.org/10.1063/1.1290601

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Monolithic photorefractive molecule with excellent transparency in the visible region

Jiwon Sohn; Jaehoon Hwang; Soo Young Park; Jin-Kyung Lee; Jai-Hyung Lee; Joon-Sung Chang; Geon Joon Lee; Bo Zhang; Qihuang Gong

Appl. Phys. Lett. 77, 1422–1424 (2000) https://doi.org/10.1063/1.1290727

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Effect of grain boundaries on carrier lifetime in chemical-vapor-deposited diamond film

Hitoki Yoneda; Kazutatsu Tokuyama; Riichi Yamazaki; Ken-ichi Ueda; Hironori Yamamoto; Kazuhiro Baba

Appl. Phys. Lett. 77, 1425–1427 (2000) https://doi.org/10.1063/1.1308054

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How a quantum-dot laser turns on

Marius Grundmann

Appl. Phys. Lett. 77, 1428–1430 (2000) https://doi.org/10.1063/1.1290716

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Infrared absorption peak due to $Ta=O$ bonds in ${Ta}_{2} O_{5}$ thin films

Haruhiko Ono; Ken-ichi Koyanagi

Appl. Phys. Lett. 77, 1431–1433 (2000) https://doi.org/10.1063/1.1290494

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Thermal expansion of bulk and homoepitaxial GaN

V. Kirchner; H. Heinke; D. Hommel; J. Z. Domagala; M. Leszczynski

Appl. Phys. Lett. 77, 1434–1436 (2000) https://doi.org/10.1063/1.1290491

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Effect of oxidation and reoxidation on the oxide-substrate interface of 4H- and 6H-SiC

G. G. Jernigan; R. E. Stahlbush; N. S. Saks

Appl. Phys. Lett. 77, 1437–1439 (2000) https://doi.org/10.1063/1.1290490

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Biphotonic holographic gratings in azobenzene polyesters: Surface relief phenomena and polarization effects

C. Sánchez; R. Alcalá; S. Hvilsted; P. S. Ramanujam

Appl. Phys. Lett. 77, 1440–1442 (2000) https://doi.org/10.1063/1.1290604

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Reaction of Co and capping layers and its effect on ${CoSi}_{2}$ formation in ${Si/SiO}_{x} / Co$ system

Gi Bum Kim; Joon Seop Kwak; Hong Koo Baik; Sung Man Lee; Sang Ho Oh; Chan Gyung Park

Appl. Phys. Lett. 77, 1443–1445 (2000) https://doi.org/10.1063/1.1290689

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Coupling of kinetic and transport phenomena in self-organization of C–B–N nanotube growth into sandwich structures

Oleg A. Louchev; Yoichiro Sato; Hisao Kanda; Yoshio Bando

Appl. Phys. Lett. 77, 1446–1448 (2000) https://doi.org/10.1063/1.1290600

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Growth of step-free surfaces on device-size (0001)SiC mesas

J. Anthony Powell; Philip G. Neudeck; Andrew J. Trunek; Glenn M. Beheim; Lawrence G. Matus; Richard W. Hoffman, Jr.; Luann J. Keys

Appl. Phys. Lett. 77, 1449–1451 (2000) https://doi.org/10.1063/1.1290717

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Temperature dependence of the transition from two-dimensional to three-dimensional growth of Ge on (001)Si studied by reflection high-energy electron diffraction

V. Cimalla; K. Zekentes

Appl. Phys. Lett. 77, 1452–1454 (2000) https://doi.org/10.1063/1.1290720

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Ion-beam-induced porosity of GaN

S. O. Kucheyev; J. S. Williams; C. Jagadish; J. Zou; V. S. J. Craig; G. Li

Appl. Phys. Lett. 77, 1455–1457 (2000) https://doi.org/10.1063/1.1290722

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Maximized ${sp}^{3}$ bonding in carbon nitride phases

S. E. Rodil; W. I. Milne; J. Robertson; L. M. Brown

Appl. Phys. Lett. 77, 1458–1460 (2000) https://doi.org/10.1063/1.1308273

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Observation and first-principles calculation of buried wurtzite phases in zinc-blende CdTe thin films

Y. Yan; M. M. Al-Jassim; K. M. Jones; S.-H. Wei; S. B. Zhang

Appl. Phys. Lett. 77, 1461–1463 (2000) https://doi.org/10.1063/1.1308062

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Thermal conductivity of fully and partially coalesced lateral epitaxial overgrown GaN/sapphire (0001) by scanning thermal microscopy

D. I. Florescu; V. M. Asnin; Fred H. Pollak; A. M. Jones; J. C. Ramer; M. J. Schurman; I. Ferguson

Appl. Phys. Lett. 77, 1464–1466 (2000) https://doi.org/10.1063/1.1308057

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High-energy-resolution scintillator: ${Ce}^{3+}$ activated ${LaCl}_{3}$

E. V. D. van Loef; P. Dorenbos; C. W. E. van Eijk; K. Krämer; H. U. Güdel

Appl. Phys. Lett. 77, 1467–1468 (2000) https://doi.org/10.1063/1.1308053

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Paramagnetic defects at the interface of ultrathin oxides grown under vacuum ultraviolet photon excitation on (111) and (100) Si

A. Stesmans; V. V. Afanas’ev

Appl. Phys. Lett. 77, 1469–1471 (2000) https://doi.org/10.1063/1.1289265

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Photovoltaic and spectral photoresponse characteristics of $n- C /p- C$ solar cell on a p-silicon substrate

K. M. Krishna; M. Umeno; Y. Nukaya; T. Soga; T. Jimbo

Appl. Phys. Lett. 77, 1472–1474 (2000) https://doi.org/10.1063/1.1290687

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Bilayer quantum transistor

Can-Ming Hu; Detlef Heitmann

Appl. Phys. Lett. 77, 1475–1477 (2000) https://doi.org/10.1063/1.1290695

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Electrical characterization of TiC ohmic contacts to aluminum ion implanted 4H–silicon carbide

S.-K. Lee; C.-M. Zetterling; E. Danielsson; M. Östling; J.-P. Palmquist; H. Högberg; U. Jansson

Appl. Phys. Lett. 77, 1478–1480 (2000) https://doi.org/10.1063/1.1290690

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Temperature-dependent carrier trapping processes in short period quantum wire superlattices grown by flow rate modulation epitaxy

X. Q. Liu; A. Sasaki; N. Ohno; Xue-Lun Wang; Mutsuo Ogura

Appl. Phys. Lett. 77, 1481–1483 (2000) https://doi.org/10.1063/1.1290693

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Electronic structures of polycrystalline ZnO thin films probed by electron energy loss spectroscopy

H. C. Ong; J. Y. Dai; K. C. Hung; Y. C. Chan; R. P. H. Chang; S. T. Ho

Appl. Phys. Lett. 77, 1484–1486 (2000) https://doi.org/10.1063/1.1290596

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High-performance all-polymer integrated circuits

G. H. Gelinck; T. C. T. Geuns; D. M. de Leeuw

Appl. Phys. Lett. 77, 1487–1489 (2000) https://doi.org/10.1063/1.1290728

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Experimental proof-of-principle investigation of enhanced $Z_{3D} T$ in (001) oriented Si/Ge superlattices

T. Koga; S. B. Cronin; M. S. Dresselhaus; J. L. Liu; K. L. Wang

Appl. Phys. Lett. 77, 1490–1492 (2000) https://doi.org/10.1063/1.1308271

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Use of multiple electrical pulses to study charge transport in polymer light-emitting diodes

D. J. Pinner; R. H. Friend; N. Tessler

Appl. Phys. Lett. 77, 1493–1495 (2000) https://doi.org/10.1063/1.1308275

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Lateral epitaxy overgrowth of GaN with ${NH}_{3}$ flow rate modulation

X. Zhang; P. D. Dapkus; D. H. Rich

Appl. Phys. Lett. 77, 1496–1498 (2000) https://doi.org/10.1063/1.1308055

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Hydrogen passivation of deep levels in $n– GaN$

A. Hierro; S. A. Ringel; M. Hansen; J. S. Speck; U. K. Mishra; S. P. DenBaars

Appl. Phys. Lett. 77, 1499–1501 (2000) https://doi.org/10.1063/1.1290042

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MAGNETISM AND SUPERCONDUCTIVITY

Giant magnetostriction in an ordered ${Fe}_{3} Pt$ single crystal exhibiting a martensitic transformation

Tomoyuki Kakeshita; Tetsuya Takeuchi; Takashi Fukuda; Masato Tsujiguchi; Toshio Saburi; Ryuichiro Oshima; Shunsuke Muto

Appl. Phys. Lett. 77, 1502–1504 (2000) https://doi.org/10.1063/1.1290694

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Determination of average demagnetizing fields in longitudinal magnetic recording using nanosecond field pulses

A. Moser; D. Weller; N. D. Rizzo; T. J. Silva

Appl. Phys. Lett. 77, 1505–1507 (2000) https://doi.org/10.1063/1.1290688

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Magnetotunneling in sputtered ${La}_{0.7} {Ca}_{0.3} {MnO}_{3} {/Al}_{2} O_{3}$ multilayers

Y. Luo; A. Käufler; K. Samwer

Appl. Phys. Lett. 77, 1508–1510 (2000) https://doi.org/10.1063/1.1290718

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Scanning aperture photoemission microscopy for magnetic imaging

Gary M. McClelland; Charles T. Rettner

Appl. Phys. Lett. 77, 1511–1513 (2000) https://doi.org/10.1063/1.1290721

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Sm–Co–Cu–Ti high-temperature permanent magnets

J. Zhou; R. Skomski; C. Chen; G. C. Hadjipanayis; D. J. Sellmyer

Appl. Phys. Lett. 77, 1514–1516 (2000) https://doi.org/10.1063/1.1290719

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Anomalous magnetotransport in $\Pr_{0.5} {Ca}_{0.5} {Mn}_{0.99} {Cr}_{0.01} O_{3}$

R. Mahendiran; A. Maignan; M. Hervieu; C. Martin; B. Raveau

Appl. Phys. Lett. 77, 1517–1519 (2000) https://doi.org/10.1063/1.1290726

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DIELECTRICS AND FERROELECTRICITY

Dielectric enhancement and Maxwell–Wagner effects in ferroelectric superlattice structures

D. O’Neill; R. M. Bowman; J. M. Gregg

Appl. Phys. Lett. 77, 1520–1522 (2000) https://doi.org/10.1063/1.1290691

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Structural and dielectric properties of epitaxial ${Ba}_{1−x} {Sr}_{x} {TiO}_{3} / {Bi}_{4} {Ti}_{3} O_{12} / {ZrO}_{2}$ heterostructures grown on silicon

C. L. Canedy; S. Aggarwal; Hao Li; T. Venkatesan; R. Ramesh; F. W. Van Keuls; R. R. Romanofsky; F. A. Miranda

Appl. Phys. Lett. 77, 1523–1525 (2000) https://doi.org/10.1063/1.1290724

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Study of the electronic conduction mechanism in Nb-doped ${SrTiO}_{3}$ thin films with Ir and Pt electrodes

Sundararaman Gopalan; Venkat Balu; Jian-Hung Lee; Jeong Hee-Han; Jack C. Lee

Appl. Phys. Lett. 77, 1526–1528 (2000) https://doi.org/10.1063/1.1308274

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Direct observations of electric field-induced domain boundary cracking in 〈001〉 oriented piezoelectric ${Pb(Mg}_{1/3} {Nb}_{2/3} {)O}_{3} {–PbTiO}_{3}$ single crystal

X. Tan; Z. Xu; J. K. Shang; P. Han

Appl. Phys. Lett. 77, 1529–1531 (2000) https://doi.org/10.1063/1.1308060

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Thickness dependence of stress in lead titanate thin films deposited on Pt-coated Si

Desheng Fu; Takeshi Ogawa; Hisao Suzuki; Kenji Ishikawa

Appl. Phys. Lett. 77, 1532–1534 (2000) https://doi.org/10.1063/1.1308061

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Orientation dependence of the ferroelectric and piezoelectric behavior of $Ba ({Ti}_{1−x} {Zr}_{x}) O_{3}$ single crystals

Zhi Yu; Ruyan Guo; A. S. Bhalla

Appl. Phys. Lett. 77, 1535–1537 (2000) https://doi.org/10.1063/1.1308276

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DEVICE PHYSICS

Electron saturation velocity of GaInP deduced in a GaInP/GaAs/GaInP double heterojunction bipolar transistor

Yue-Ming Hsin; Shih-Tzung Hsu; Chen-Chung Fan

Appl. Phys. Lett. 77, 1538–1539 (2000) https://doi.org/10.1063/1.1290602

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Photovoltaic heterostructure devices made of sequentially adsorbed poly(phenylene vinylene) and functionalized $C_{60}$

H. Mattoussi; M. F. Rubner; F. Zhou; J. Kumar; S. K. Tripathy; L. Y. Chiang

Appl. Phys. Lett. 77, 1540–1542 (2000) https://doi.org/10.1063/1.1290723

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GaNAs resonant-cavity avalanche photodiode operating at 1.064 μm

G. S. Kinsey; D. W. Gotthold; A. L. Holmes, Jr.; J. C. Campbell

Appl. Phys. Lett. 77, 1543–1544 (2000) https://doi.org/10.1063/1.1308272

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Parametric amplification in a torsional microresonator

Dustin W. Carr; Stephane Evoy; Lidija Sekaric; H. G. Craighead; J. M. Parpia

Appl. Phys. Lett. 77, 1545–1547 (2000) https://doi.org/10.1063/1.1308270

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Staircase band gap ${Si}_{1−x} {Ge}_{x} / Si$ photodetectors

Zhiyun Lo; Ruolian Jiang; Youdou Zheng; Lan Zang; Zhizhong Chen; Shunming Zhu; Xuemei Cheng; Xiabing Liu

Appl. Phys. Lett. 77, 1548–1550 (2000) https://doi.org/10.1063/1.1286958

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APPLIED BIOPHYSICS

Comparison of penetration depth between two-photon excitation and single-photon excitation in imaging through turbid tissue media

Min Gu; Xiaosong Gan; Aernout Kisteman; Ming Gun Xu

Appl. Phys. Lett. 77, 1551–1553 (2000) https://doi.org/10.1063/1.1308059

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INTERDISCIPLINARY AND GENERAL PHYSICS

Influence of adsorbates on the surface conductivity of chemical vapor deposition diamond

M. Szameitat; X. Jiang; W. Beyer

Appl. Phys. Lett. 77, 1554–1556 (2000) https://doi.org/10.1063/1.1290725

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Imaging soft samples in liquid with tuning fork based shear force microscopy

W. H. J. Rensen; N. F. van Hulst; S. B. Kämmer

Appl. Phys. Lett. 77, 1557–1559 (2000) https://doi.org/10.1063/1.1308058

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ERRATA

Erratum: “Efficiency peaks in the transient electroluminescence of multilayer organic light-emitting devices” [Appl. Phys. Lett. 76, 2170 (2000)]

V. Savvate’ev; J. Friedl; L. Zou; W. J. Oldham; J. Shinar

Appl. Phys. Lett. 77, 1560 (2000) https://doi.org/10.1063/1.1308052

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Erratum: “Giant magnetoresistance of the ${La}_{1−x} {Ag}_{x} {MnO}_{3}$ polycrystalline inhomogeneous granular system” [Appl. Phys. Lett. 77, 723 (2000)]

T. Tang; Q. Q. Cao; K. M. Gu; H. Y. Xu; S. Y. Zhang; Y. W. Du

Appl. Phys. Lett. 77, 1560 (2000) https://doi.org/10.1063/1.1311403

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Print ISSN 0003-6951

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