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Volume 76, Issue 9

28 February 2000

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
DEVICE PHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS
COMMENTS

LASERS, OPTICS, AND OPTOELECTRONICS

Photon noise and correlations in semiconductor cascade lasers

Farhan Rana; Rajeev J. Ram

Appl. Phys. Lett. 76, 1083–1085 (2000) https://doi.org/10.1063/1.125946

View articletitled, Photon noise and correlations in semiconductor cascade lasers

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Poling of soda-lime glass for hybrid glass/polymer electro-optic modulators

Y. Enami; P. Poyhonen; D. L. Mathine; A. Bashar; P. Madasamy; S. Honkanen; B. Kippelen; N. Peyghambarian; S. R. Marder; A. K-Y. Jen; J. Wu

Appl. Phys. Lett. 76, 1086–1088 (2000) https://doi.org/10.1063/1.125947

View articletitled, Poling of soda-lime glass for hybrid glass/polymer electro-optic modulators

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Soft proton exchange on periodically poled ${LiNbO}_{3} :$ A simple waveguide fabrication process for highly efficient nonlinear interactions

L. Chanvillard; P. Aschiéri; P. Baldi; D. B. Ostrowsky; M. de Micheli; L. Huang; D. J. Bamford

Appl. Phys. Lett. 76, 1089–1091 (2000) https://doi.org/10.1063/1.125948

View articletitled, Soft proton exchange on periodically poled <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LiNbO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><mi xmlns="">:</mi></math></span> A simple waveguide fabrication process for highly efficient nonlinear interactions

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Single-mode tunable, pulsed, and continuous wave quantum-cascade distributed feedback lasers at $λ≅4.6–4.7 μ m$

Rüdeger Köhler; Claire Gmachl; Alessandro Tredicucci; Federico Capasso; Deborah L. Sivco; S. N. George Chu; Alfred Y. Cho

Appl. Phys. Lett. 76, 1092–1094 (2000) https://doi.org/10.1063/1.125987

View articletitled, Single-mode tunable, pulsed, and continuous wave quantum-cascade distributed feedback lasers at <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">λ≅4.6–4.7 μ</mtext><mi mathvariant="normal" xmlns="">m</mi></math></span>

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Spatial beam switching and bistability in a diode ring laser

M. F. Booth; A. Schremer; J. M. Ballantyne

Appl. Phys. Lett. 76, 1095–1097 (2000) https://doi.org/10.1063/1.125949

View articletitled, Spatial beam switching and bistability in a diode ring laser

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Temperature dependence of the responsivity of II–VI ultraviolet photodiodes

I. K. Sou; Z. H. Ma; Z. Q. Zhang; G. K. L. Wong

Appl. Phys. Lett. 76, 1098–1100 (2000) https://doi.org/10.1063/1.125950

View articletitled, Temperature dependence of the responsivity of II–VI ultraviolet photodiodes

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Van der Waals xenotaxy: Oriented growth of hexagonal GaSe(001) on rectangular GaAs(110)

R. Rudolph; Y. Tomm; C. Pettenkofer; A. Klein; W. Jaegermann

Appl. Phys. Lett. 76, 1101–1103 (2000) https://doi.org/10.1063/1.125951

View articletitled, Van der Waals xenotaxy: Oriented growth of hexagonal GaSe(001) on rectangular GaAs(110)

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Influence of buffer-layer surface morphology on the self-organized growth of InAs on InP(001) nanostructures

L. González; J. M. García; R. García; F. Briones; J. Martínez-Pastor; C. Ballesteros

Appl. Phys. Lett. 76, 1104–1106 (2000) https://doi.org/10.1063/1.125952

View articletitled, Influence of buffer-layer surface morphology on the self-organized growth of InAs on InP(001) nanostructures

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Short-range order in ultrathin film titanium dioxide studied by Raman spectroscopy

V. V. Yakovlev; G. Scarel; C. R. Aita; S. Mochizuki

Appl. Phys. Lett. 76, 1107–1109 (2000) https://doi.org/10.1063/1.125953

View articletitled, Short-range order in ultrathin film titanium dioxide studied by Raman spectroscopy

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Rectangular nanovoids in helium-implanted and thermally annealed MgO(100)

B. J. Kooi; A. van Veen; J. Th. M. De Hosson; H. Schut; A. V. Fedorov; F. Labohm

Appl. Phys. Lett. 76, 1110–1112 (2000) https://doi.org/10.1063/1.125954

View articletitled, Rectangular nanovoids in helium-implanted and thermally annealed MgO(100)

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Structural characterization and strain relaxation in porous GaN layers

M. Mynbaeva; A. Titkov; A. Kryganovskii; V. Ratnikov; K. Mynbaev; H. Huhtinen; R. Laiho; V. Dmitriev

Appl. Phys. Lett. 76, 1113–1115 (2000) https://doi.org/10.1063/1.125955

View articletitled, Structural characterization and strain relaxation in porous GaN layers

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Synthesis and optical properties of gallium arsenide nanowires

Xiangfeng Duan; Jianfang Wang; Charles M. Lieber

Appl. Phys. Lett. 76, 1116–1118 (2000) https://doi.org/10.1063/1.125956

View articletitled, Synthesis and optical properties of gallium arsenide nanowires

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Effect of hydrogen etching on 6H SiC surface morphology studied by reflection high-energy positron diffraction and atomic force microscopy

A. Kawasuso; K. Kojima; M. Yoshikawa; H. Itoh; K. Narumi

Appl. Phys. Lett. 76, 1119–1121 (2000) https://doi.org/10.1063/1.125957

View articletitled, Effect of hydrogen etching on 6H SiC surface morphology studied by reflection high-energy positron diffraction and atomic force microscopy

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Photothermal spectroscopy using multilayer cantilever for chemical detection

Guangming Li; Larry W. Burggraf; William P. Baker

Appl. Phys. Lett. 76, 1122–1124 (2000) https://doi.org/10.1063/1.125988

View articletitled, Photothermal spectroscopy using multilayer cantilever for chemical detection

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Anisotropic growth of single-crystal graphite plates by nickel-assisted microwave-plasma chemical-vapor deposition

Teresa Badzian; Andrzej Badzian; Rustum Roy; Shang-Cong Cheng

Appl. Phys. Lett. 76, 1125–1127 (2000) https://doi.org/10.1063/1.125958

View articletitled, Anisotropic growth of single-crystal graphite plates by nickel-assisted microwave-plasma chemical-vapor deposition

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Fabricating nanometer-scale Co dot and line arrays on Cu(100) surfaces

S. L. Silva; C. R. Jenkins; S. M. York; F. M. Leibsle

Appl. Phys. Lett. 76, 1128–1130 (2000) https://doi.org/10.1063/1.125959

View articletitled, Fabricating nanometer-scale Co dot and line arrays on Cu(100) surfaces

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Photoluminescence of high-quality AlGaAs layers grown by molecular-beam epitaxy

K. S. Zhuravlev; A. I. Toropov; T. S. Shamirzaev; A. K. Bakarov

Appl. Phys. Lett. 76, 1131–1133 (2000) https://doi.org/10.1063/1.125960

View articletitled, Photoluminescence of high-quality AlGaAs layers grown by molecular-beam epitaxy

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Multilayered gated lateral quantum dot devices

C.-T. Liang; M. Y. Simmons; C. G. Smith; Gil-Ho Kim; D. A. Ritchie; M. Pepper

Appl. Phys. Lett. 76, 1134–1136 (2000) https://doi.org/10.1063/1.125961

View articletitled, Multilayered gated lateral quantum dot devices

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Analysis of the turn-off dynamics in polymer light-emitting diodes

D. J. Pinner; R. H. Friend; N. Tessler

Appl. Phys. Lett. 76, 1137–1139 (2000) https://doi.org/10.1063/1.125962

View articletitled, Analysis of the turn-off dynamics in polymer light-emitting diodes

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Energy loss rates of two-dimensional hole gases in inverted ${Si/Si}_{0.8} {Ge}_{0.2}$ heterostructures

G. Ansaripour; G. Braithwaite; M. Myronov; O. A. Mironov; E. H. C. Parker; T. E. Whall

Appl. Phys. Lett. 76, 1140–1142 (2000) https://doi.org/10.1063/1.125963

View articletitled, Energy loss rates of two-dimensional hole gases in inverted <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si/Si</mi><mrow><mi mathvariant="normal">0.8</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi mathvariant="normal">0.2</mi></mrow></msub></math></span> heterostructures

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Band structure calculation of field emission from ${Al}_{x} {Ga}_{1−x} N$ as a function of stoichiometry

M. S. Chung; N. M. Miskovsky; P. H. Cutler; N. Kumar

Appl. Phys. Lett. 76, 1143–1145 (2000) https://doi.org/10.1063/1.125964

View articletitled, Band structure calculation of field emission from <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">N</mi></math></span> as a function of stoichiometry

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Conduction-band offset of single InAs monolayers on GaAs

Raffaele Colombelli; Vincenzo Piazza; Antonio Badolato; Marco Lazzarino; Fabio Beltram; Winston Schoenfeld; Pierre Petroff

Appl. Phys. Lett. 76, 1146–1148 (2000) https://doi.org/10.1063/1.125965

View articletitled, Conduction-band offset of single InAs monolayers on GaAs

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Hole transport in Mg-doped GaN epilayers grown by metalorganic chemical vapor deposition

K. S. Kim; M. G. Cheong; C.-H. Hong; G. M. Yang; K. Y. Lim; E.-K. Suh; H. J. Lee

Appl. Phys. Lett. 76, 1149–1151 (2000) https://doi.org/10.1063/1.125966

View articletitled, Hole transport in Mg-doped GaN epilayers grown by metalorganic chemical vapor deposition

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Direct determination of the Andreev reflection probability by means of point contact spectroscopy

M. Jakob; H. Stahl; J. Knoch; J. Appenzeller; B. Lengeler; H. Hardtdegen; H. Lüth

Appl. Phys. Lett. 76, 1152–1154 (2000) https://doi.org/10.1063/1.125967

View articletitled, Direct determination of the Andreev reflection probability by means of point contact spectroscopy

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Time-resolved electroabsorption measurement of the electron velocity-field characteristic in GaN

M. Wraback; H. Shen; J. C. Carrano; T. Li; J. C. Campbell; M. J. Schurman; I. T. Ferguson

Appl. Phys. Lett. 76, 1155–1157 (2000) https://doi.org/10.1063/1.125968

View articletitled, Time-resolved electroabsorption measurement of the electron velocity-field characteristic in GaN

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Comparison of the electrical and thermal stability of stress- or radiation-induced leakage current in thin oxides

P. Riess; M. Ceschia; A. Paccagnella; G. Ghibaudo; G. Pananakakis

Appl. Phys. Lett. 76, 1158–1160 (2000) https://doi.org/10.1063/1.125969

View articletitled, Comparison of the electrical and thermal stability of stress- or radiation-induced leakage current in thin oxides

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Lattice and energy band engineering in AlInGaN/GaN heterostructures

M. Asif Khan; J. W. Yang; G. Simin; R. Gaska; M. S. Shur; Hans-Conrad zur Loye; G. Tamulaitis; A. Zukauskas; David J. Smith; D. Chandrasekhar; R. Bicknell-Tassius

Appl. Phys. Lett. 76, 1161–1163 (2000) https://doi.org/10.1063/1.125970

View articletitled, Lattice and energy band engineering in AlInGaN/GaN heterostructures

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MAGNETISM AND SUPERCONDUCTIVITY

Strain-dependent vacuum annealing effects in ${La}_{0.67} {Ca}_{0.33} {MnO}_{3−δ}$ films

J. R. Sun; C. F. Yeung; K. Zhao; L. Z. Zhou; C. H. Leung; H. K. Wong; B. G. Shen

Appl. Phys. Lett. 76, 1164–1166 (2000) https://doi.org/10.1063/1.125971

View articletitled, Strain-dependent vacuum annealing effects in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mi mathvariant="normal">0.67</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mi mathvariant="normal">0.33</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mi mathvariant="normal">3−δ</mi></mrow></msub></math></span> films

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Exciton spin polarization in magnetic semiconductor quantum wires

O. Ray; A. A. Sirenko; J. J. Berry; N. Samarth; J. A. Gupta; I. Malajovich; D. D. Awschalom

Appl. Phys. Lett. 76, 1167–1169 (2000) https://doi.org/10.1063/1.125972

View articletitled, Exciton spin polarization in magnetic semiconductor quantum wires

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Magnetocrystalline anisotropy of ${TbFe}_{12−x} {Ti}_{x}$ single crystals

Jianli Wang; Guangheng Wu; Ning Tang; Dong Yang; Fuming Yang; F. R. de Boer; Y. Janssen; J. C. P. Klaasse; E. Brück; K. H. J. Buschow

Appl. Phys. Lett. 76, 1170–1172 (2000) https://doi.org/10.1063/1.125973

View articletitled, Magnetocrystalline anisotropy of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TbFe</mi><mrow><mtext>12−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mi>x</mi></mrow></msub></math></span> single crystals

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Ultrasonic study on charge ordering, magnetic, and structural changes in ${La}_{0.25} {Ca}_{0.75} {Mn}_{0.93} {Cr}_{0.07} O_{3}$

X.-G. Li; H. Chen; C. F. Zhu; H. D. Zhou; R. K. Zheng; J. H. Zhang; L. Chen

Appl. Phys. Lett. 76, 1173–1175 (2000) https://doi.org/10.1063/1.125974

View articletitled, Ultrasonic study on charge ordering, magnetic, and structural changes in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mi mathvariant="normal">0.25</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mi mathvariant="normal">0.75</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Mn</mi><mrow><mi mathvariant="normal">0.93</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cr</mi><mrow><mi mathvariant="normal">0.07</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span>

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Ferromagnetic resonance detection with a torsion-mode atomic-force microscope

Markus Löhndorf; John Moreland; Pavel Kabos

Appl. Phys. Lett. 76, 1176–1178 (2000) https://doi.org/10.1063/1.125989

View articletitled, Ferromagnetic resonance detection with a torsion-mode atomic-force microscope

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Photocontrol of spin-glass state in ${Mg}_{1.5} {FeTi}_{0.5} O_{4}$ spinel ferrite films

Y. Muraoka; H. Tabata; T. Kawai

Appl. Phys. Lett. 76, 1179–1181 (2000) https://doi.org/10.1063/1.125975

View articletitled, Photocontrol of spin-glass state in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Mg</mi><mrow><mi mathvariant="normal">1.5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">FeTi</mi><mrow><mi mathvariant="normal">0.5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math></span> spinel ferrite films

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DIELECTRICS AND FERROELECTRICITY

dc-electric-field-induced microwave loss in ferroelectrics and intrinsic limitation for the quality factor of a tunable component

Alexander Tagantsev

Appl. Phys. Lett. 76, 1182–1184 (2000) https://doi.org/10.1063/1.125976

View articletitled, dc-electric-field-induced microwave loss in ferroelectrics and intrinsic limitation for the quality factor of a tunable component

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Microwave properties of tetragonally distorted ${(Ba}_{0.5} {Sr}_{0.5} {)TiO}_{3}$ thin films

W. J. Kim; W. Chang; S. B. Qadri; J. M. Pond; S. W. Kirchoefer; D. B. Chrisey; J. S. Horwitz

Appl. Phys. Lett. 76, 1185–1187 (2000) https://doi.org/10.1063/1.125977

View articletitled, Microwave properties of tetragonally distorted <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">(Ba</mi><mrow><mi mathvariant="normal">0.5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mi mathvariant="normal">0.5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">)TiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span> thin films

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DEVICE PHYSICS

Optical gain and collector current characteristics of resonant-cavity phototransistors

Chien-chung Lin; Wayne Martin; James S. Harris, Jr.; Fred Sugihwo

Appl. Phys. Lett. 76, 1188–1190 (2000) https://doi.org/10.1063/1.125978

View articletitled, Optical gain and collector current characteristics of resonant-cavity phototransistors

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Electron diffusivity in p-InGaAs determined from the pulse response of InP/InGaAs uni-traveling-carrier photodiodes

Naofumi Shimizu; Noriyuki Watanabe; Tomofumi Furuta; Tadao Ishibashi

Appl. Phys. Lett. 76, 1191–1193 (2000) https://doi.org/10.1063/1.125979

View articletitled, Electron diffusivity in <em>p</em>-InGaAs determined from the pulse response of InP/InGaAs uni-traveling-carrier photodiodes

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A high-speed photocurrent multiplication device based on an organic double-layered structure

Ken-ichi Nakayama; Masahiro Hiramoto; Masaaki Yokoyama

Appl. Phys. Lett. 76, 1194–1196 (2000) https://doi.org/10.1063/1.125980

View articletitled, A high-speed photocurrent multiplication device based on an organic double-layered structure

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Quantum-dot concentrator and thermodynamic model for the global redshift

Keith Barnham; Jose Luis Marques; John Hassard; Paul O’Brien

Appl. Phys. Lett. 76, 1197–1199 (2000) https://doi.org/10.1063/1.125981

View articletitled, Quantum-dot concentrator and thermodynamic model for the global redshift

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INTERDISCIPLINARY AND GENERAL PHYSICS

Nanostructure fabrication using pulsed lasers in combination with a scanning tunneling microscope: Mechanism investigation

Y. F. Lu; Z. H. Mai; Y. W. Zheng; W. D. Song

Appl. Phys. Lett. 76, 1200–1202 (2000) https://doi.org/10.1063/1.125982

View articletitled, Nanostructure fabrication using pulsed lasers in combination with a scanning tunneling microscope: Mechanism investigation

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Extracting interaction forces and complementary observables in dynamic probe microscopy

U. Dürig

Appl. Phys. Lett. 76, 1203–1205 (2000) https://doi.org/10.1063/1.125983

View articletitled, Extracting interaction forces and complementary observables in dynamic probe microscopy

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High-contrast topography-free sample for near-field optical microscopy

T. Kalkbrenner; M. Graf; C. Durkan; J. Mlynek; V. Sandoghdar

Appl. Phys. Lett. 76, 1206–1208 (2000) https://doi.org/10.1063/1.125984

View articletitled, High-contrast topography-free sample for near-field optical microscopy

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COMMENTS

Comment on “Ferromagnetism at room temperature in ${La}_{0.8} {Ca}_{0.2} {MnO}_{3}$ thin films” [Appl. Phys. Lett. 74, 1886 (1999)]

P. A. Joy; S. K. Date

Appl. Phys. Lett. 76, 1209 (2000) https://doi.org/10.1063/1.125985

View articletitled, Comment on “Ferromagnetism at room temperature in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mi mathvariant="normal">0.8</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mi mathvariant="normal">0.2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span> thin films” [Appl. Phys. Lett. <strong>74</strong>, 1886 (1999)]

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Response to “Comment on ‘Ferromagnetism at room temperature in ${La}_{0.8} {Ca}_{0.2} {MnO}_{3}$ thin films’ ” [Appl. Phys. Lett. 76, 1209 (2000)]

R. Shreekala; M. Rajeswari; R. C. Srivastava; K. Ghosh; A. Goyal; V. V. Srinivasu; S. E. Lofland; S. M. Bhagat; M. Downes; R. P. Sharma; S. B. Ogale; R. L. Greene; R. Ramesh; T. Venkatesan; R. A. Rao; C. B. Eom

Appl. Phys. Lett. 76, 1210 (2000) https://doi.org/10.1063/1.125986

View articletitled, Response to “Comment on ‘Ferromagnetism at room temperature in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mi mathvariant="normal">0.8</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mi mathvariant="normal">0.2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span> thin films’ ” [Appl. Phys. Lett. <strong>76</strong>, 1209 (2000)]

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