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Issues
21 February 2000
ISSN 0003-6951
EISSN 1077-3118
LASERS, OPTICS, AND OPTOELECTRONICS
Bulk and surface recombination in 3.45 μm light emitting diodes
Appl. Phys. Lett. 76, 943–945 (2000)
https://doi.org/10.1063/1.125911
Saturation effects in under low-voltage excitation
Appl. Phys. Lett. 76, 949–951 (2000)
https://doi.org/10.1063/1.125901
Lightwave propagation through a 120° sharply bent single-line-defect photonic crystal waveguide
Appl. Phys. Lett. 76, 952–954 (2000)
https://doi.org/10.1063/1.125902
Blue light generation in an external ring cavity using both cavity and grating feedback
Appl. Phys. Lett. 76, 955–957 (2000)
https://doi.org/10.1063/1.125903
Bipolar transport organic light emitting diodes with enhanced reliability by LiF doping
Appl. Phys. Lett. 76, 958–960 (2000)
https://doi.org/10.1063/1.125904
Peculiar noise properties of phonons generated by femtosecond laser pulses in antimony
Appl. Phys. Lett. 76, 961–963 (2000)
https://doi.org/10.1063/1.125905
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
Efficient n-type doping of diamond using surfactant-mediated epitaxial growth
Appl. Phys. Lett. 76, 976–978 (2000)
https://doi.org/10.1063/1.125910
Refractive indices and absorption coefficients of alloys
Appl. Phys. Lett. 76, 979–981 (2000)
https://doi.org/10.1063/1.125912
Epitaxial growth of AlN and layers on aluminum nitride substrates
Appl. Phys. Lett. 76, 985–987 (2000)
https://doi.org/10.1063/1.125914
Effect of current crowding on vacancy diffusion and void formation in electromigration
Appl. Phys. Lett. 76, 988–990 (2000)
https://doi.org/10.1063/1.125915
Visible photonic band gap engineering in silicon nitride waveguides
Appl. Phys. Lett. 76, 991–993 (2000)
https://doi.org/10.1063/1.125916
Recording by microexplosion and two-photon reading of three-dimensional optical memory in polymethylmethacrylate films
Appl. Phys. Lett. 76, 1000–1002 (2000)
https://doi.org/10.1063/1.125919
Nonlinear optical absorption in undoped and cerium-doped thin films using -scan technique
Appl. Phys. Lett. 76, 1003–1005 (2000)
https://doi.org/10.1063/1.125920
Strongly enhanced Tb luminescence from titania xerogel solids mesoscopically confined in porous anodic alumina
Appl. Phys. Lett. 76, 1006–1008 (2000)
https://doi.org/10.1063/1.125921
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
Spatially localized dynamic properties of individual interfaces in semiconducting oxides
Appl. Phys. Lett. 76, 1012–1014 (2000)
https://doi.org/10.1063/1.125923
Valence band structure of cubic AlGaN/GaN superlattices
Appl. Phys. Lett. 76, 1015–1017 (2000)
https://doi.org/10.1063/1.125924
Atomic force microscope tip-surface behavior under continuous bias or pulsed voltages in noncontact mode
Appl. Phys. Lett. 76, 1018–1020 (2000)
https://doi.org/10.1063/1.125925
Optical absorption and anomalous photoconductivity in undoped n-type GaN
Appl. Phys. Lett. 76, 1021–1023 (2000)
https://doi.org/10.1063/1.125944
Determination of the concentration of hot-carrier-induced bulk defects in laser-recrystallized polysilicon thin film transistors
Appl. Phys. Lett. 76, 1024–1026 (2000)
https://doi.org/10.1063/1.125926
Intra-valence band photocurrent spectroscopy of self-assembled Ge dots in Si
Appl. Phys. Lett. 76, 1027–1029 (2000)
https://doi.org/10.1063/1.125927
Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content
Appl. Phys. Lett. 76, 1030–1032 (2000)
https://doi.org/10.1063/1.125928
An analysis of temperature dependent piezoelectric Franz–Keldysh effect in AlGaN
Appl. Phys. Lett. 76, 1033–1035 (2000)
https://doi.org/10.1063/1.125929
Temperature-dependent tunneling through thermally grown on n-type 4H– and 6H–SiC
Appl. Phys. Lett. 76, 1039–1041 (2000)
https://doi.org/10.1063/1.125931
Many-body effects on excitons properties in GaN/AlGaN quantum wells
Appl. Phys. Lett. 76, 1042–1044 (2000)
https://doi.org/10.1063/1.125932
Investigation of vertical transport in n-GaN films grown by molecular beam epitaxy using Schottky barrier diodes
Appl. Phys. Lett. 76, 1045–1047 (2000)
https://doi.org/10.1063/1.125933
MAGNETISM AND SUPERCONDUCTIVITY
Strongly reduced bias dependence in spin–tunnel junctions obtained by ultraviolet light assisted oxidation
Appl. Phys. Lett. 76, 1048–1050 (2000)
https://doi.org/10.1063/1.125934
Oxygen-deficiency-activated charge ordering in thin films
Appl. Phys. Lett. 76, 1051–1053 (2000)
https://doi.org/10.1063/1.125935
Melt-spun precipitation-hardened magnets with abnormal temperature dependence of coercivity
Appl. Phys. Lett. 76, 1054–1056 (2000)
https://doi.org/10.1063/1.125936
Suppression of exchange bias by ion irradiation
T. Mewes; R. Lopusnik; J. Fassbender; B. Hillebrands; M. Jung; D. Engel; A. Ehresmann; H. Schmoranzer
Appl. Phys. Lett. 76, 1057–1059 (2000)
https://doi.org/10.1063/1.125937
DIELECTRICS AND FERROELECTRICITY
Compositionally step-varied thin films with enhanced dielectric and ferroelectric properties
Appl. Phys. Lett. 76, 1063–1065 (2000)
https://doi.org/10.1063/1.125939
Comparison of memory effect between and ferroelectric thin films deposited on Si substrates
Appl. Phys. Lett. 76, 1066–1068 (2000)
https://doi.org/10.1063/1.125940
DEVICE PHYSICS
Stable avalanche-photodiode operation of ZnSe-based structure blue-ultraviolet photodetectors
Appl. Phys. Lett. 76, 1069–1071 (2000)
https://doi.org/10.1063/1.125941
INTERDISCIPLINARY AND GENERAL PHYSICS
Microvolume field-effect sensor for the scanning probe microscope
S. R. Manalis; E. B. Cooper; P. F. Indermuhle; P. Kernen; P. Wagner; D. G. Hafeman; S. C. Minne; C. F. Quate
Appl. Phys. Lett. 76, 1072–1074 (2000)
https://doi.org/10.1063/1.125942
ERRATA
Charge localization in optoelectronic and photocatalytic applications: Computational perspective
Francesco Ambrosio, Julia Wiktor
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Diamagnetic levitation of water realized with a simple device consisting of ordinary permanent magnets
Tomoya Naito, Tomoaki Suzuki, et al.