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Volume 76, Issue 6

7 February 2000

Applied Physics Letters Cover Image for Volume 76, Issue 6

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
PLASMAS AND ELECTRICAL DISCHARGES
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
DEVICE PHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS

LASERS, OPTICS, AND OPTOELECTRONICS

High-efficiency organic polymer light-emitting heterostructure devices on flexible plastic substrates

Yi He; Jerzy Kanicki

Appl. Phys. Lett. 76, 661–663 (2000) https://doi.org/10.1063/1.125854

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Photocurrent in an electron transporting luminescent polymer

F. Feller; A. P. Monkman

Appl. Phys. Lett. 76, 664–666 (2000) https://doi.org/10.1063/1.125855

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Patterning 100 nm features using deep-ultraviolet contact photolithography

James G. Goodberlet

Appl. Phys. Lett. 76, 667–669 (2000) https://doi.org/10.1063/1.125856

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Direct observation of the Gouy phase shift in THz impulse ranging

R. W. McGowan; R. A. Cheville; D. Grischkowsky

Appl. Phys. Lett. 76, 670–672 (2000) https://doi.org/10.1063/1.125857

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Fabrication of circular optical structures with a 20 nm minimum feature size using nanoimprint lithography

Mingtao Li; Jian Wang; Lei Zhuang; Stephen Y. Chou

Appl. Phys. Lett. 76, 673–675 (2000) https://doi.org/10.1063/1.125896

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PLASMAS AND ELECTRICAL DISCHARGES

Direct identification of the synergism between methyl radicals and atomic hydrogen during growth of amorphous hydrogenated carbon films

A. von Keudell; T. Schwarz-Selinger; M. Meier; W. Jacob

Appl. Phys. Lett. 76, 676–678 (2000) https://doi.org/10.1063/1.125858

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Effect of carrier confinement on photoluminescence from modulation-doped ${Al}_{x} {Ga}_{1−x} N/GaN$ heterostructures

B. Shen; T. Someya; O. Moriwaki; Y. Arakawa

Appl. Phys. Lett. 76, 679–681 (2000) https://doi.org/10.1063/1.125859

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Ge–Si intermixing in Ge quantum dots on Si(001) and Si(111)

F. Boscherini; G. Capellini; L. Di Gaspare; F. Rosei; N. Motta; S. Mobilio

Appl. Phys. Lett. 76, 682–684 (2000) https://doi.org/10.1063/1.125860

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Coexistence of planar and three-dimensional quantum dots in CdSe/ZnSe structures

M. Strassburg; Th. Deniozou; A. Hoffmann; R. Heitz; U. W. Pohl; D. Bimberg; D. Litvinov; A. Rosenauer; D. Gerthsen; S. Schwedhelm; K. Lischka; D. Schikora

Appl. Phys. Lett. 76, 685–687 (2000) https://doi.org/10.1063/1.125861

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Indirect excitation of 1.5 μm emission from ${Er}^{3+}$ in silicon-rich silica

A. J. Kenyon; C. E. Chryssou; C. W. Pitt

Appl. Phys. Lett. 76, 688–690 (2000) https://doi.org/10.1063/1.125862

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Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing

T. M. Hsu; Y. S. Lan; W.-H. Chang; N. T. Yeh; J.-I. Chyi

Appl. Phys. Lett. 76, 691–693 (2000) https://doi.org/10.1063/1.125863

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Neutron diffraction study of the reduction of ${NiAl}_{2} O_{4}$

E. Ustundag; B. Clausen; M. A. M. Bourke

Appl. Phys. Lett. 76, 694–696 (2000) https://doi.org/10.1063/1.125864

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Cross-sectional electron-beam-induced current analysis of the passivation of extended defects in cast multicrystalline silicon by remote hydrogen plasma treatment

O. F. Vyvenko; O. Krüger; M. Kittler

Appl. Phys. Lett. 76, 697–699 (2000) https://doi.org/10.1063/1.125865

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Cross-sectional nanophotoluminescence studies of Stark effects in self-assembled quantum dots

H. Htoon; J. W. Keto; O. Baklenov; A. L. Holmes, Jr.; C. K. Shih

Appl. Phys. Lett. 76, 700–702 (2000) https://doi.org/10.1063/1.125866

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Relaxation of an epitaxial InGaAs film on a thin twist-bonded (100) GaAs substrate

St. Senz; G. Kästner; U. Gösele; V. Gottschalch

Appl. Phys. Lett. 76, 703–705 (2000) https://doi.org/10.1063/1.125867

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Selective nucleation and growth of carbon nanotubes at the ${CoSi}_{2} / Si$ interface

L. P. Biró; G. Molnár; I. Szabó; Z. Vértesy; Z. E. Horváth; J. Gyulai; Z. Kónya; P. Piedigrosso; A. Fonseca; J. B. Nagy; P. A. Thiry

Appl. Phys. Lett. 76, 706–708 (2000) https://doi.org/10.1063/1.125868

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Sequential ion-induced stress relaxation and growth: A way to prepare stress-relieved thick films of cubic boron nitride

H.-G. Boyen; P. Widmayer; D. Schwertberger; N. Deyneka; P. Ziemann

Appl. Phys. Lett. 76, 709–711 (2000) https://doi.org/10.1063/1.125869

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Hardening of fullerite $C_{60}$ during temperature-induced polymerization and amorphization under pressure

A. G. Lyapin; V. V. Brazhkin; E. L. Gromnitskaya; S. V. Popova; O. V. Stal’gorova; R. N. Voloshin; S. C. Bayliss; A. V. Sapelkin

Appl. Phys. Lett. 76, 712–714 (2000) https://doi.org/10.1063/1.125870

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Room-temperature silicidation using radiation-enhanced diffusion in hydrogenated amorphous silicon

J. M. Shannon; M. K. Chai; B. J. Sealy

Appl. Phys. Lett. 76, 715–717 (2000) https://doi.org/10.1063/1.125871

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Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy

I. P. Smorchkova; E. Haus; B. Heying; P. Kozodoy; P. Fini; J. P. Ibbetson; S. Keller; S. P. DenBaars; J. S. Speck; U. K. Mishra

Appl. Phys. Lett. 76, 718–720 (2000) https://doi.org/10.1063/1.125872

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Spontaneous formation of complex and ordered structures on oxygen-plasma-treated elastomeric polydimethylsiloxane

Diana B. H. Chua; H. T. Ng; Sam F. Y. Li

Appl. Phys. Lett. 76, 721–723 (2000) https://doi.org/10.1063/1.125873

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Smoothening of Cu films grown on Si(001)

R. A. Lukaszew; Y. Sheng; C. Uher; R. Clarke

Appl. Phys. Lett. 76, 724–726 (2000) https://doi.org/10.1063/1.125874

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Interface structure of ultrathin ${CoSi}_{2}$ films epitaxially grown on Si(111)

A. Seubert; J. Schardt; W. Weiß; U. Starke; K. Heinz; Th. Fauster

Appl. Phys. Lett. 76, 727–729 (2000) https://doi.org/10.1063/1.125875

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Surface and bulk passivation of GaAs solar cell on Si substrate by $H_{2} + {PH}_{3}$ plasma

G. Wang; T. Ogawa; M. Umeno; T. Soga; T. Jimbo

Appl. Phys. Lett. 76, 730–732 (2000) https://doi.org/10.1063/1.125876

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Isolation of a metallic Si(111)7×7 surface reconstruction via separation by implanted oxygen

M. Noh; G. E. Jellison, Jr.; F. Namavar; H. H. Weitering

Appl. Phys. Lett. 76, 733–735 (2000) https://doi.org/10.1063/1.125877

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High electron mobility AlGaN/GaN heterostructure on (111) Si

A. T. Schremer; J. A. Smart; Y. Wang; O. Ambacher; N. C. MacDonald; J. R. Shealy

Appl. Phys. Lett. 76, 736–738 (2000) https://doi.org/10.1063/1.125878

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Ultradeep, low-damage dry etching of SiC

H. Cho; P. Leerungnawarat; D. C. Hays; S. J. Pearton; S. N. G. Chu; R. M. Strong; C.-M. Zetterling; M. Östling; F. Ren

Appl. Phys. Lett. 76, 739–741 (2000) https://doi.org/10.1063/1.125879

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High electron mobility AlGaN/GaN heterostructures grown on sapphire substrates by molecular-beam epitaxy

L. K. Li; B. Turk; W. I. Wang; S. Syed; D. Simonian; H. L. Stormer

Appl. Phys. Lett. 76, 742–744 (2000) https://doi.org/10.1063/1.125880

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High frequency conductivity of the high-mobility two-dimensional electron gas

P. J. Burke; I. B. Spielman; J. P. Eisenstein; L. N. Pfeiffer; K. W. West

Appl. Phys. Lett. 76, 745–747 (2000) https://doi.org/10.1063/1.125881

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MAGNETISM AND SUPERCONDUCTIVITY

Magnetic nanoscale dots on colloid crystal surfaces

S. P. Li; W. S. Lew; Y. B. Xu; A. Hirohata; A. Samad; F. Baker; J. A. C. Bland

Appl. Phys. Lett. 76, 748–750 (2000) https://doi.org/10.1063/1.125882

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Microwave response near zero magnetic field in transition-metal-doped silicate glasses

R. R. Rakhimov; H. R. Ries; D. E. Jones; L. B. Glebov; L. N. Glebova

Appl. Phys. Lett. 76, 751–753 (2000) https://doi.org/10.1063/1.125883

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The formation of 360° domain walls in magnetic tunnel junction elements

X. Portier; A. K. Petford-Long

Appl. Phys. Lett. 76, 754–756 (2000) https://doi.org/10.1063/1.125884

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Is sulfur a donor in diamond?

R. Kalish; A. Reznik; C. Uzan-Saguy; C. Cytermann

Appl. Phys. Lett. 76, 757–759 (2000) https://doi.org/10.1063/1.125885

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Growth and superconducting properties of ${YBa}_{2} {Cu}_{3} O_{7−δ}$ films on conductive ${SrRuO}_{3}$ and ${LaNiO}_{3}$ multilayers for coated conductor applications

T. Aytug; J. Z. Wu; C. Cantoni; D. T. Verebelyi; E. D. Specht; M. Paranthaman; D. P. Norton; D. K. Christen; R. E. Ericson; C. L. Thomas

Appl. Phys. Lett. 76, 760–762 (2000) https://doi.org/10.1063/1.125886

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Enhanced room-temperature magnetoresistance in partially melted ${La}_{0.67} {Ca}_{0.33} {MnO}_{3}$ manganites

A. K. Pradhan; B. K. Roul; J. G. Wen; Z. F. Ren; M. Muralidhar; P. Dutta; D. R. Sahu; S. Mohanty; P. K. Patro

Appl. Phys. Lett. 76, 763–765 (2000) https://doi.org/10.1063/1.125887

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Micromagnetics of submicron (110) Fe elements

Luc Thomas; Stuart S. P. Parkin; Jun Yu; Ulrich Rüdiger; Andrew D. Kent

Appl. Phys. Lett. 76, 766–768 (2000) https://doi.org/10.1063/1.125888

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DIELECTRICS AND FERROELECTRICITY

Electro-optic measurements of the ferroelectric-paraelectric boundary in ${Ba}_{1−x} {Sr}_{x} {TiO}_{3}$ materials chips

Jingwei Li; Fred Duewer; Chen Gao; Hauyee Chang; X.-D. Xiang; Yalin Lu

Appl. Phys. Lett. 76, 769–771 (2000) https://doi.org/10.1063/1.125889

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Electrical characteristics of ultrathin gate oxide prepared by postoxidation annealing in ${ND}_{3}$

Hyungshin Kwon; Hyunsang Hwang

Appl. Phys. Lett. 76, 772–773 (2000) https://doi.org/10.1063/1.125890

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Schottky barrier effects in the photocurrent of sol–gel derived lead zirconate titanate thin film capacitors

Y. S. Yang; S. J. Lee; S. Yi; B. G. Chae; S. H. Lee; H. J. Joo; M. S. Jang

Appl. Phys. Lett. 76, 774–776 (2000) https://doi.org/10.1063/1.125891

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DEVICE PHYSICS

Ultrafast two-dimensional electron gas detector and mixer for terahertz radiation

K. S. Yngvesson

Appl. Phys. Lett. 76, 777–779 (2000) https://doi.org/10.1063/1.125892

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Geometric heat trapping in niobium superconductor–insulator– superconductor mixers due to niobium titanium nitride leads

B. Leone; B. D. Jackson; J. R. Gao; T. M. Klapwijk

Appl. Phys. Lett. 76, 780–782 (2000) https://doi.org/10.1063/1.125893

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INTERDISCIPLINARY AND GENERAL PHYSICS

Evidence for phase-explosion and generation of large particles during high power nanosecond laser ablation of silicon

J. H. Yoo; S. H. Jeong; X. L. Mao; R. Greif; R. E. Russo

Appl. Phys. Lett. 76, 783–785 (2000) https://doi.org/10.1063/1.125894

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Parallel nanolithography in carbon layers with conductive imprint stamps

Thomas Mühl; Johannes Kretz; Ingolf Mönch; Claus M. Schneider; Hubert Brückl; Günter Reiss

Appl. Phys. Lett. 76, 786–788 (2000) https://doi.org/10.1063/1.125895

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