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Volume 76, Issue 5

31 January 2000

Applied Physics Letters Cover Image for Volume 76, Issue 5

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
PLASMAS AND ELECTRICAL DISCHARGES
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
DEVICE PHYSICS
APPLIED BIOPHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS
COMMENTS
ERRATA

LASERS, OPTICS, AND OPTOELECTRONICS

Multiple gratings simultaneously formed in holographic polymer-dispersed liquid-crystal displays

Chris C. Bowley; Adam K. Fontecchio; Gregory P. Crawford; Jau-Jeng Lin; Le Li; Sadeg Faris

Appl. Phys. Lett. 76, 523–525 (2000) https://doi.org/10.1063/1.125836

View articletitled, Multiple gratings simultaneously formed in holographic polymer-dispersed liquid-crystal displays

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Near-field spectroscopy of selectively oxidized vertical cavity surface emitting lasers

J. Kim; J. T. Boyd; Howard E. Jackson; K. D. Choquette

Appl. Phys. Lett. 76, 526–528 (2000) https://doi.org/10.1063/1.125807

View articletitled, Near-field spectroscopy of selectively oxidized vertical cavity surface emitting lasers

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Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire

M. Hansen; P. Fini; L. Zhao; A. C. Abare; L. A. Coldren; J. S. Speck; S. P. DenBaars

Appl. Phys. Lett. 76, 529–531 (2000) https://doi.org/10.1063/1.125808

View articletitled, Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire

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Radiation losses of waveguide-based two-dimensional photonic crystals: Positive role of the substrate

H. Benisty; D. Labilloy; C. Weisbuch; C. J. M. Smith; T. F. Krauss; D. Cassagne; A. Béraud; C. Jouanin

Appl. Phys. Lett. 76, 532–534 (2000) https://doi.org/10.1063/1.125809

View articletitled, Radiation losses of waveguide-based two-dimensional photonic crystals: Positive role of the substrate

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Stability of the single-mode output of a laser diode array with phase conjugate feedback

S. Juul Jensen; M. Løbel; P. M. Petersen

Appl. Phys. Lett. 76, 535–537 (2000) https://doi.org/10.1063/1.125810

View articletitled, Stability of the single-mode output of a laser diode array with phase conjugate feedback

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Large enhancement of second harmonic generation in polymer films by microcavities

H. Cao; D. B. Hall; J. M. Torkelson; C.-Q. Cao

Appl. Phys. Lett. 76, 538–540 (2000) https://doi.org/10.1063/1.125811

View articletitled, Large enhancement of second harmonic generation in polymer films by microcavities

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Direct measurement of optical phase in the near field

P. L. Phillips; J. C. Knight; J. M. Pottage; G. Kakarantzas; P. St. J. Russell

Appl. Phys. Lett. 76, 541–543 (2000) https://doi.org/10.1063/1.125812

View articletitled, Direct measurement of optical phase in the near field

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PLASMAS AND ELECTRICAL DISCHARGES

Vacuum emission and breakdown characteristics of a planar He–Xe microdischarge

Olivier B. Postel; Mark A. Cappelli

Appl. Phys. Lett. 76, 544–546 (2000) https://doi.org/10.1063/1.125813

View articletitled, Vacuum emission and breakdown characteristics of a planar He–Xe microdischarge

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Electron temperature control by varying size of slits made in a grid

Kohgi Kato; Tetsuji Shimizu; Satoru Iizuka; Noriyoshi Sato

Appl. Phys. Lett. 76, 547–549 (2000) https://doi.org/10.1063/1.125814

View articletitled, Electron temperature control by varying size of slits made in a grid

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Growth and characterization of hypothetical zinc-blende ZnO films on GaAs(001) substrates with ZnS buffer layers

A. B. M. Almamun Ashrafi; Akio Ueta; Adrian Avramescu; Hidekazu Kumano; Ikuo Suemune; Young-Woo Ok; Tae-Yeon Seong

Appl. Phys. Lett. 76, 550–552 (2000) https://doi.org/10.1063/1.125851

View articletitled, Growth and characterization of hypothetical zinc-blende ZnO films on GaAs(001) substrates with ZnS buffer layers

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First-principles study of ${NH}_{3}$ exposed Si(001)2×1: Relation between N $1s$ core-level shifts and atomic structure

G.-M. Rignanese; Alfredo Pasquarello

Appl. Phys. Lett. 76, 553–555 (2000) https://doi.org/10.1063/1.125815

View articletitled, First-principles study of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">NH</mi><mrow><mn>3</mn></mrow></msub></math></span> exposed Si(001)2×1: Relation between N <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">1s</mtext></math></span> core-level shifts and atomic structure

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High-power quantum-dot lasers at 1100 nm

F. Heinrichsdorff; Ch. Ribbat; M. Grundmann; D. Bimberg

Appl. Phys. Lett. 76, 556–558 (2000) https://doi.org/10.1063/1.125816

View articletitled, High-power quantum-dot lasers at 1100 nm

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Layer-by-layer growth of ZnO epilayer on ${Al}_{2} O_{3} (0001)$ by using a MgO buffer layer

Yefan Chen; Hang-Ju Ko; Soon-Ku Hong; Takafumi Yao

Appl. Phys. Lett. 76, 559–561 (2000) https://doi.org/10.1063/1.125817

View articletitled, Layer-by-layer growth of ZnO epilayer on <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><mi mathvariant="normal" xmlns="">(0001)</mi></math></span> by using a MgO buffer layer

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Chemical vapor deposition of Si nanowires nucleated by ${TiSi}_{2}$ islands on Si

T. I. Kamins; R. Stanley Williams; Y. Chen; Y.-L. Chang; Y. A. Chang

Appl. Phys. Lett. 76, 562–564 (2000) https://doi.org/10.1063/1.125852

View articletitled, Chemical vapor deposition of Si nanowires nucleated by <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TiSi</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math></span> islands on Si

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Ortho-molecular hydrogen in hydrogenated amorphous silicon

Tining Su; P. C. Taylor; Shenlin Chen; R. S. Crandall; A. H. Mahan

Appl. Phys. Lett. 76, 565–567 (2000) https://doi.org/10.1063/1.125818

View articletitled, Ortho-molecular hydrogen in hydrogenated amorphous silicon

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Comparison of nitrogen incorporation in ${SiO}_{2}$ /SiC and ${SiO}_{2}$ /Si structures

K. McDonald; M. B. Huang; R. A. Weller; L. C. Feldman; J. R. Williams; F. C. Stedile; I. J. R. Baumvol; C. Radtke

Appl. Phys. Lett. 76, 568–570 (2000) https://doi.org/10.1063/1.125819

View articletitled, Comparison of nitrogen incorporation in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math></span>/SiC and <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math></span>/Si structures

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The dependence of arsenic transient enhanced diffusion on the silicon substrate temperature during ultralow energy implantation

S. Whelan; J. A. Van den Berg; S. Zhang; D. G. Armour; R. D. Goldberg

Appl. Phys. Lett. 76, 571–573 (2000) https://doi.org/10.1063/1.125820

View articletitled, The dependence of arsenic transient enhanced diffusion on the silicon substrate temperature during ultralow energy implantation

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Implantation damage effect on boron annealing behavior using low-energy polyatomic ion implantation

Jian-Yue Jin; Jiarui Liu; Paul A. W. van der Heide; Wei-Kan Chu

Appl. Phys. Lett. 76, 574–576 (2000) https://doi.org/10.1063/1.125821

View articletitled, Implantation damage effect on boron annealing behavior using low-energy polyatomic ion implantation

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Characterization of InGaN thin films using high-resolution x-ray diffraction

L. Görgens; O. Ambacher; M. Stutzmann; C. Miskys; F. Scholz; J. Off

Appl. Phys. Lett. 76, 577–579 (2000) https://doi.org/10.1063/1.125822

View articletitled, Characterization of InGaN thin films using high-resolution x-ray diffraction

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Drift mobility of semiconductive ${La}_{0.5} {Sr}_{0.5} {CoO}_{3}$ films measured using the traveling wave method

J. Yin; L. Wang; J. M. Liu; K. J. Chen; Z. G. Liu; Q. Huang

Appl. Phys. Lett. 76, 580–582 (2000) https://doi.org/10.1063/1.125823

View articletitled, Drift mobility of semiconductive <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mi mathvariant="normal">0.5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mi mathvariant="normal">0.5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">CoO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span> films measured using the traveling wave method

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A full-band Monte Carlo model for the temperature dependence of electron and hole transport in silicon

Björn Fischer; Karl R. Hofmann

Appl. Phys. Lett. 76, 583–585 (2000) https://doi.org/10.1063/1.125824

View articletitled, A full-band Monte Carlo model for the temperature dependence of electron and hole transport in silicon

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Optical and acoustic phonon modes in self-organized Ge quantum dot superlattices

J. L. Liu; G. Jin; Y. S. Tang; Y. H. Luo; K. L. Wang; D. P. Yu

Appl. Phys. Lett. 76, 586–588 (2000) https://doi.org/10.1063/1.125825

View articletitled, Optical and acoustic phonon modes in self-organized Ge quantum dot superlattices

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Two-dimensional growth of InSb thin films on GaAs(111)A substrates

K. Kanisawa; H. Yamaguchi; Y. Hirayama

Appl. Phys. Lett. 76, 589–591 (2000) https://doi.org/10.1063/1.125826

View articletitled, Two-dimensional growth of InSb thin films on GaAs(111)A substrates

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1/f noise through the metal–nonmetal transition in percolating composites

A. J. Breeze; S. A. Carter; G. B. Alers; M. B. Heaney

Appl. Phys. Lett. 76, 592–594 (2000) https://doi.org/10.1063/1.125827

View articletitled, 1/<em>f</em> noise through the metal–nonmetal transition in percolating composites

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Defined crystallization of amorphous-silicon films using contact printing

Sanghoon Bae; Stephen J. Fonash

Appl. Phys. Lett. 76, 595–597 (2000) https://doi.org/10.1063/1.125828

View articletitled, Defined crystallization of amorphous-silicon films using contact printing

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MAGNETISM AND SUPERCONDUCTIVITY

Observation of an antiparallel magnetic state in ${Fe}_{3} O_{4} {/Mn}_{3} O_{4}$ superlattices

G. Chern; Lance Horng; T. Y. Hou; M. Z. Lin

Appl. Phys. Lett. 76, 598–600 (2000) https://doi.org/10.1063/1.125829

View articletitled, Observation of an antiparallel magnetic state in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">/Mn</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math></span> superlattices

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Fabrication of a Josephson junction using an atomic force microscope

Insang Song; Byong Man Kim; Gwangseo Park

Appl. Phys. Lett. 76, 601–603 (2000) https://doi.org/10.1063/1.125830

View articletitled, Fabrication of a Josephson junction using an atomic force microscope

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Analyzing the polarization distribution in poled polymer films by scanning Kelvin microscopy

Robert Blum; Andrei Ivankov; Stefan Schwantes; Manfred Eich

Appl. Phys. Lett. 76, 604–606 (2000) https://doi.org/10.1063/1.125831

View articletitled, Analyzing the polarization distribution in poled polymer films by scanning Kelvin microscopy

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Pinhole analysis in magnetic tunnel junctions

R. Schad; D. Allen; Giovanni Zangari; Iulica Zana; D. Yang; Mark Tondra; Dexin Wang

Appl. Phys. Lett. 76, 607–609 (2000) https://doi.org/10.1063/1.125832

View articletitled, Pinhole analysis in magnetic tunnel junctions

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Spin-tunnel-junction thermal stability and interface interdiffusion above 300 $°$ C

S. Cardoso; P. P. Freitas; C. de Jesus; P. Wei; J. C. Soares

Appl. Phys. Lett. 76, 610–612 (2000) https://doi.org/10.1063/1.125833

View articletitled, Spin-tunnel-junction thermal stability and interface interdiffusion above 300 <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">°</mi></math></span>C

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Control of domain structures and magnetotransport properties in patterned ferromagnetic wires

T. Taniyama; I. Nakatani; T. Yakabe; Y. Yamazaki

Appl. Phys. Lett. 76, 613–615 (2000) https://doi.org/10.1063/1.125834

View articletitled, Control of domain structures and magnetotransport properties in patterned ferromagnetic wires

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Nanoscale magnetostrictive response in a thin film owing to a local magnetic field

R. Berger; F. Krause; A. Dietzel; J. W. Seo; J. Fompeyrine; J.-P. Locquet

Appl. Phys. Lett. 76, 616–618 (2000) https://doi.org/10.1063/1.125835

View articletitled, Nanoscale magnetostrictive response in a thin film owing to a local magnetic field

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Microscopic magnetization reversal in perpendicular anisotropy CoCr thin films

Gottfried Wastlbauer; George D. Skidmore; Chris Merton; Jake Schmidt; E. Dan Dahlberg; Joseph Skorjanec

Appl. Phys. Lett. 76, 619–621 (2000) https://doi.org/10.1063/1.125837

View articletitled, Microscopic magnetization reversal in perpendicular anisotropy CoCr thin films

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Two-dimensional magnetic switching of micron-size films in magnetic tunnel junctions

A. Anguelouch; B. D. Schrag; Gang Xiao; Yu Lu; P. L. Trouilloud; R. A. Wanner; W. J. Gallagher; S. S. P. Parkin

Appl. Phys. Lett. 76, 622–624 (2000) https://doi.org/10.1063/1.125838

View articletitled, Two-dimensional magnetic switching of micron-size films in magnetic tunnel junctions

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DIELECTRICS AND FERROELECTRICITY

Composition-control of magnetron-sputter-deposited $({Ba}_{x} {Sr}_{1−x}) {Ti}_{1+y} O_{3+z}$ thin films for voltage tunable devices

Jaemo Im; O. Auciello; P. K. Baumann; S. K. Streiffer; D. Y. Kaufman; A. R. Krauss

Appl. Phys. Lett. 76, 625–627 (2000) https://doi.org/10.1063/1.125839

View articletitled, Composition-control of magnetron-sputter-deposited <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Ba</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mtext>1−x</mtext></mrow></msub><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mtext>1+y</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mtext>3+z</mtext></mrow></msub></math></span> thin films for voltage tunable devices

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DEVICE PHYSICS

Analysis of submicron carbon nanotube field-effect transistors

Toshishige Yamada

Appl. Phys. Lett. 76, 628–630 (2000) https://doi.org/10.1063/1.125840

View articletitled, Analysis of submicron carbon nanotube field-effect transistors

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GaN microdisk light emitting diodes

S. X. Jin; J. Li; J. Z. Li; J. Y. Lin; H. X. Jiang

Appl. Phys. Lett. 76, 631–633 (2000) https://doi.org/10.1063/1.125841

View articletitled, GaN microdisk light emitting diodes

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High luminescent efficiency in light-emitting polymers due to effective exciton confinement

R. G. Sun; Y. Z. Wang; D. K. Wang; Q. B. Zheng; E. M. Kyllo; T. L. Gustafson; A. J. Epstein

Appl. Phys. Lett. 76, 634–636 (2000) https://doi.org/10.1063/1.125842

View articletitled, High luminescent efficiency in light-emitting polymers due to effective exciton confinement

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Multigate single-electron transistors and their application to an exclusive-OR gate

Yasuo Takahashi; Akira Fujiwara; Kenji Yamazaki; Hideo Namatsu; Kenji Kurihara; Katsumi Murase

Appl. Phys. Lett. 76, 637–639 (2000) https://doi.org/10.1063/1.125843

View articletitled, Multigate single-electron transistors and their application to an exclusive-OR gate

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Nonlinearity and electrothermal feedback of high $T_{c}$ transition edge bolometers

H. Neff; A. M. N. Lima; G. S. Deep; R. C. S. Freire; E. Melcher; I. A. Khrebtov; A. D. Tkachenko

Appl. Phys. Lett. 76, 640–642 (2000) https://doi.org/10.1063/1.125844

View articletitled, Nonlinearity and electrothermal feedback of high <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>T</mi><mrow><mi>c</mi></mrow></msub></math></span> transition edge bolometers

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APPLIED BIOPHYSICS

Scanning tunneling microscopy on the formation of lipoamide-cyclodextrin monolayer on Au(111)

Satoshi Yasuda; Hidemi Shigekawa; Iwao Suzuki; Tohru Nakamura; Mutsuyoshi Matsumoto; Makoto Komiyama

Appl. Phys. Lett. 76, 643–645 (2000) https://doi.org/10.1063/1.125845

View articletitled, Scanning tunneling microscopy on the formation of lipoamide-cyclodextrin monolayer on Au(111)

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INTERDISCIPLINARY AND GENERAL PHYSICS

Implementation of a three-quantum-bit search algorithm

Lieven M. K. Vandersypen; Matthias Steffen; Mark H. Sherwood; Costantino S. Yannoni; Gregory Breyta; Isaac L. Chuang

Appl. Phys. Lett. 76, 646–648 (2000) https://doi.org/10.1063/1.125846

View articletitled, Implementation of a three-quantum-bit search algorithm

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Delayed release of Li atoms from laser ablated lithium niobate

J. A. Chaos; R. W. Dreyfus; A. Perea; R. Serna; J. Gonzalo; C. N. Afonso

Appl. Phys. Lett. 76, 649–651 (2000) https://doi.org/10.1063/1.125847

View articletitled, Delayed release of Li atoms from laser ablated lithium niobate

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Synthesis of GaN–carbon composite nanotubes and GaN nanorods by arc discharge in nitrogen atmosphere

Weiqiang Han; Philipp Redlich; Frank Ernst; Manfred Rühle

Appl. Phys. Lett. 76, 652–654 (2000) https://doi.org/10.1063/1.125848

View articletitled, Synthesis of GaN–carbon composite nanotubes and GaN nanorods by arc discharge in nitrogen atmosphere

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COMMENTS

Comment on “Fermi-edge singularity observed in a modulation-doped AlGaN/GaN heterostructure” [Appl. Phys. Lett. 73, 2471 (1998)]

B. Monemar; J. P. Bergman; P. O. Holtz

Appl. Phys. Lett. 76, 655 (2000) https://doi.org/10.1063/1.125849

View articletitled, Comment on “Fermi-edge singularity observed in a modulation-doped AlGaN/GaN heterostructure” [Appl. Phys. Lett. <strong>73</strong>, 2471 (1998)]

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ERRATA

Erratum: “Quantitative microwave evanescent microscopy” [Appl. Phys. Lett. 75, 3005 (1999)]

Chen Gao; Fred Duewer; X.-D. Xiang

Appl. Phys. Lett. 76, 656 (2000) https://doi.org/10.1063/1.125850

View articletitled, Erratum: “Quantitative microwave evanescent microscopy” [Appl. Phys. Lett. <strong>75</strong>, 3005 (1999)]

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