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Issues
19 June 2000
ISSN 0003-6951
EISSN 1077-3118
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS
Cavity-Q-driven spectral shift in a cylindrical whispering-gallery-mode microcavity laser
Appl. Phys. Lett. 76, 3679–3681 (2000)
https://doi.org/10.1063/1.126747
Erbium-implanted silica colloids with 80% luminescence quantum efficiency
Appl. Phys. Lett. 76, 3682–3684 (2000)
https://doi.org/10.1063/1.126748
Influence of the valence-band offset on gain and absorption in GaNAs/GaAs quantum well lasers
Appl. Phys. Lett. 76, 3685–3687 (2000)
https://doi.org/10.1063/1.126749
IV–VI compound midinfrared high-reflectivity mirrors and vertical-cavity surface-emitting lasers grown by molecular-beam epitaxy
Z. Shi; G. Xu; P. J. McCann; X. M. Fang; N. Dai; C. L. Felix; W. W. Bewley; I. Vurgaftman; J. R. Meyer
Appl. Phys. Lett. 76, 3688–3690 (2000)
https://doi.org/10.1063/1.126750
PLASMAS AND ELECTRICAL DISCHARGES
Pretreatment effects by aqua-regia solution on field emission of diamond film
Appl. Phys. Lett. 76, 3694–3696 (2000)
https://doi.org/10.1063/1.126752
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
Effect of interfacial silicon on the structural stability of on
Appl. Phys. Lett. 76, 3697–3699 (2000)
https://doi.org/10.1063/1.126753
High quality Ge on Si by epitaxial necking
Appl. Phys. Lett. 76, 3700–3702 (2000)
https://doi.org/10.1063/1.126754
Oxidized Ni/Pt and Ni/Au ohmic contacts to p-type GaN
Li-Chien Chen; Jin-Kuo Ho; Charng-Shyang Jong; Chien C. Chiu; Kwang-Kuo Shih; Fu-Rong Chen; Ji-Jung Kai; Li Chang
Appl. Phys. Lett. 76, 3703–3705 (2000)
https://doi.org/10.1063/1.126755
Shock-induced transformation of to a high-pressure cubic-spinel phase
Appl. Phys. Lett. 76, 3706–3708 (2000)
https://doi.org/10.1063/1.126756
Oxygen migration during epitaxial regrowth in -irradiated α-quartz investigated by means of nuclear reaction analysis
Appl. Phys. Lett. 76, 3709–3711 (2000)
https://doi.org/10.1063/1.126757
Mechanism of luminescence in InGaN/GaN multiple quantum wells
Appl. Phys. Lett. 76, 3712–3714 (2000)
https://doi.org/10.1063/1.126758
Organic ligand and solvent kinetics during the assembly of CdSe nanocrystal arrays using infrared attenuated total reflection
Appl. Phys. Lett. 76, 3715–3717 (2000)
https://doi.org/10.1063/1.126759
Theoretical investigation of nitrogen-doping effect on vacancy aggregation processes in Si
Appl. Phys. Lett. 76, 3718–3720 (2000)
https://doi.org/10.1063/1.126760
X-ray induced luminescence of solid argon at high pressures: A pressure probe
Appl. Phys. Lett. 76, 3721–3722 (2000)
https://doi.org/10.1063/1.126761
Modification of the growth mode of Ge on Si by buried Ge islands
Appl. Phys. Lett. 76, 3723–3725 (2000)
https://doi.org/10.1063/1.126762
Topographic measurement of electromigration-induced stress gradients in aluminum conductor lines
Appl. Phys. Lett. 76, 3726–3728 (2000)
https://doi.org/10.1063/1.126763
Effects of heat treatment on diffusion of Cu atoms into CdTe single crystals
Appl. Phys. Lett. 76, 3729–3731 (2000)
https://doi.org/10.1063/1.126764
In situ transmission electron microscopy study of electric-field-induced microcracking in single crystal
Appl. Phys. Lett. 76, 3732–3734 (2000)
https://doi.org/10.1063/1.126765
Structure of Zn adsorption on
Appl. Phys. Lett. 76, 3735–3737 (2000)
https://doi.org/10.1063/1.126766
Photoemission spectroscopic investigation on the interface formation of a ladder-type poly(para-phenylene) with aluminum
Appl. Phys. Lett. 76, 3738–3740 (2000)
https://doi.org/10.1063/1.126767
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
Self-organized type-II quantum dots realized on
Appl. Phys. Lett. 76, 3741–3743 (2000)
https://doi.org/10.1063/1.126768
Effects of nitridation and annealing on interface properties of thermally oxidized metal–oxide–semiconductor system
Appl. Phys. Lett. 76, 3744–3746 (2000)
https://doi.org/10.1063/1.126769
One- and two-dimensional tunnel junction arrays in weak Coulomb blockade regime: Absolute accuracy in thermometry
Appl. Phys. Lett. 76, 3747–3749 (2000)
https://doi.org/10.1063/1.126770
High-energy He-ion irradiation-induced defects and their influence on the noise behavior of Schottky junctions
Appl. Phys. Lett. 76, 3750–3752 (2000)
https://doi.org/10.1063/1.126771
Luminescence energy shift and carrier lifetime change dependence on carrier density in quantum wells
Appl. Phys. Lett. 76, 3753–3755 (2000)
https://doi.org/10.1063/1.126744
Surface photovoltage analysis of phase transformation of copper in -type silicon
Appl. Phys. Lett. 76, 3756–3758 (2000)
https://doi.org/10.1063/1.126797
Conductivity and Hall-effect in highly resistive GaN layers
Appl. Phys. Lett. 76, 3762–3764 (2000)
https://doi.org/10.1063/1.126773
Influence of Si doping on optical characteristics of cubic GaN grown on (001) GaAs substrates
Z. Q. Li; H. Chen; H. F. Liu; L. Wan; M. H. Zhang; Q. Huang; J. M. Zhou; N. Yang; K. Tao; Y. J. Han; Y. Luo
Appl. Phys. Lett. 76, 3765–3767 (2000)
https://doi.org/10.1063/1.126774
Air-bridged lateral epitaxial overgrowth of GaN thin films
Appl. Phys. Lett. 76, 3768–3770 (2000)
https://doi.org/10.1063/1.126775
Do centers have levels in the Si band gap? Spin-dependent recombination study of the “hyperfine spectrum”
Appl. Phys. Lett. 76, 3771–3773 (2000)
https://doi.org/10.1063/1.126776
Enhanced nucleation in solid-phase crystallization of amorphous Si by imprint technology
Appl. Phys. Lett. 76, 3774–3776 (2000)
https://doi.org/10.1063/1.126777
Schottky effect model of electrical activity of metallic precipitates in silicon
Appl. Phys. Lett. 76, 3777–3779 (2000)
https://doi.org/10.1063/1.126778
MAGNETISM AND SUPERCONDUCTIVITY
Switching characteristics and magnetization vortices of thin-film cobalt in nanometer-scale patterned arrays
Appl. Phys. Lett. 76, 3780–3782 (2000)
https://doi.org/10.1063/1.126779
Tunnel conductance as a probe of spin polarization decay in Cu dusted tunnel junctions
Appl. Phys. Lett. 76, 3783–3785 (2000)
https://doi.org/10.1063/1.126780
Highly spin-polarized chromium dioxide thin films prepared by chemical vapor deposition from chromyl chloride
Appl. Phys. Lett. 76, 3789–3791 (2000)
https://doi.org/10.1063/1.126782
Influence of Ta antidiffusion barriers on the thermal stability of tunnel junctions
Appl. Phys. Lett. 76, 3792–3794 (2000)
https://doi.org/10.1063/1.126783
Improved flux pinning and anomalous magnetization peak in heavily overdoped single crystals
Appl. Phys. Lett. 76, 3795–3797 (2000)
https://doi.org/10.1063/1.126784
DIELECTRICS AND FERROELECTRICITY
Polarization reversal and domain grating in flux-grown crystals with variable potassium stoichiometry
Appl. Phys. Lett. 76, 3798–3800 (2000)
https://doi.org/10.1063/1.126785
Oxygen-vacancy ordering as a fatigue mechanism in perovskite ferroelectrics
Appl. Phys. Lett. 76, 3801–3803 (2000)
https://doi.org/10.1063/1.126786
High-dielectric-constant ceramic-powder polymer composites
Appl. Phys. Lett. 76, 3804–3806 (2000)
https://doi.org/10.1063/1.126787
DEVICE PHYSICS
GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates
M. Asif Khan; J. W. Yang; W. Knap; E. Frayssinet; X. Hu; G. Simin; P. Prystawko; M. Leszczynski; I. Grzegory; S. Porowski; R. Gaska; M. S. Shur; B. Beaumont; M. Teisseire; G. Neu
Appl. Phys. Lett. 76, 3807–3809 (2000)
https://doi.org/10.1063/1.126788
In situ-grown carbon nanotube array with excellent field emission characteristics
Appl. Phys. Lett. 76, 3813–3815 (2000)
https://doi.org/10.1063/1.126790
Temperature dependence and current transport mechanisms in Schottky rectifiers
A. P. Zhang; G. Dang; F. Ren; J. Han; A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; J. M. Redwing; H. Cho; S. J. Pearton
Appl. Phys. Lett. 76, 3816–3818 (2000)
https://doi.org/10.1063/1.126791
On-chip clock technology for ultrafast digital superconducting electronics
Appl. Phys. Lett. 76, 3819–3821 (2000)
https://doi.org/10.1063/1.126792
INTERDISCIPLINARY AND GENERAL PHYSICS
Laser-assisted scanning tunnelling microscope detection of a molecular adsorbate
Appl. Phys. Lett. 76, 3825–3827 (2000)
https://doi.org/10.1063/1.126794
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures
Tomoya Okuda, Shunsuke Ota, et al.
Era of entropy: Synthesis, structure, properties, and applications of high-entropy materials
Christina M. Rost, Alessandro R. Mazza, et al.