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Volume 76, Issue 23

5 June 2000

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
PLASMAS AND ELECTRICAL DISCHARGES
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
INTERDISCIPLINARY AND GENERAL PHYSICS

LASERS, OPTICS, AND OPTOELECTRONICS

Three-dimensional photonic band gap structure of a polymer-metal composite

Ji Zhou; Y. Zhou; S. L. Ng; H. X. Zhang; W. X. Que; Y. L. Lam; Y. C. Chan; C. H. Kam

Appl. Phys. Lett. 76, 3337–3339 (2000) https://doi.org/10.1063/1.126641

View articletitled, Three-dimensional photonic band gap structure of a polymer-metal composite

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Improved temperature performance of ${Al}_{0.33} {Ga}_{0.67} As/GaAs$ quantum-cascade lasers with emission wavelength at $λ≈11 μ m$

P. Kruck; H. Page; C. Sirtori; S. Barbieri; M. Stellmacher; J. Nagle

Appl. Phys. Lett. 76, 3340–3342 (2000) https://doi.org/10.1063/1.126686

View articletitled, Improved temperature performance of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi mathvariant="normal">0.33</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi mathvariant="normal">0.67</mi></mrow></msub><mi mathvariant="normal" xmlns="">As/GaAs</mi></math></span> quantum-cascade lasers with emission wavelength at <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">λ≈11 μ</mtext><mi mathvariant="normal" xmlns="">m</mi></math></span>

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Room-temperature lasing via ground state of current-injected vertically aligned InP/GaInP quantum dots

Y. M. Manz; O. G. Schmidt; K. Eberl

Appl. Phys. Lett. 76, 3343–3345 (2000) https://doi.org/10.1063/1.126642

View articletitled, Room-temperature lasing via ground state of current-injected vertically aligned InP/GaInP quantum dots

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Double fitting of Maker fringes to characterize near-surface and bulk second-order nonlinearities in poled silica

Mingxin Qiu; Ramon Vilaseca; Muriel Botey; Jordi Sellarès; Francesc Pi; Gaspar Orriols

Appl. Phys. Lett. 76, 3346–3348 (2000) https://doi.org/10.1063/1.126643

View articletitled, Double fitting of Maker fringes to characterize near-surface and bulk second-order nonlinearities in poled silica

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High characteristic temperature of near-1.3-μm InGaAs/GaAs quantum-dot lasers at room temperature

Kohki Mukai; Yoshiaki Nakata; Koji Otsubo; Mitsuru Sugawara; Naoki Yokoyama; Hiroshi Ishikawa

Appl. Phys. Lett. 76, 3349–3351 (2000) https://doi.org/10.1063/1.126644

View articletitled, High characteristic temperature of near-1.3-μm InGaAs/GaAs quantum-dot lasers at room temperature

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Thermally induced local gain suppression in vertical-cavity surface-emitting lasers

C. Degen; I. Fischer; W. Elsäßer

Appl. Phys. Lett. 76, 3352–3354 (2000) https://doi.org/10.1063/1.126645

View articletitled, Thermally induced local gain suppression in vertical-cavity surface-emitting lasers

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Room-temperature far-infrared emission from a self-organized InGaAs/GaAs quantum-dot laser

Sanjay Krishna; Omar Qasaimeh; Pallab Bhattacharya; Patrick J. McCann; Khosrow Namjou

Appl. Phys. Lett. 76, 3355–3357 (2000) https://doi.org/10.1063/1.126646

View articletitled, Room-temperature far-infrared emission from a self-organized InGaAs/GaAs quantum-dot laser

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Image amplification and novelty filtering with a photorefractive polymer

Arosha Goonesekera; Daniel Wright; W. E. Moerner

Appl. Phys. Lett. 76, 3358–3360 (2000) https://doi.org/10.1063/1.126647

View articletitled, Image amplification and novelty filtering with a photorefractive polymer

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Strained InGaAs/AlGaAs/GaAs-quantum cascade lasers

S. Gianordoli; W. Schrenk; L. Hvozdara; N. Finger; G. Strasser; E. Gornik

Appl. Phys. Lett. 76, 3361–3363 (2000) https://doi.org/10.1063/1.126648

View articletitled, Strained InGaAs/AlGaAs/GaAs-quantum cascade lasers

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Power dependence of the injection lock band of angled-grating distributed feedback lasers

D. J. Gallant

Appl. Phys. Lett. 76, 3364–3366 (2000) https://doi.org/10.1063/1.126649

View articletitled, Power dependence of the injection lock band of angled-grating distributed feedback lasers

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Propagation of femtosecond optical pulses through uncoated and metal-coated near-field fiber probes

Roland Müller; Christoph Lienau

Appl. Phys. Lett. 76, 3367–3369 (2000) https://doi.org/10.1063/1.126650

View articletitled, Propagation of femtosecond optical pulses through uncoated and metal-coated near-field fiber probes

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PLASMAS AND ELECTRICAL DISCHARGES

Simulation of a picosecond laser ablation plasma

Samuel S. Mao; Xianglei Mao; Ralph Greif; Richard E. Russo

Appl. Phys. Lett. 76, 3370–3372 (2000) https://doi.org/10.1063/1.126651

View articletitled, Simulation of a picosecond laser ablation plasma

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

High-temperature photoluminescence in sol-gel silica containing SiC/C nanostructures

Guangming Li; Larry W. Burggraf; James R. Shoemaker; DeLyle Eastwood; Albert E. Stiegman

Appl. Phys. Lett. 76, 3373–3375 (2000) https://doi.org/10.1063/1.126685

View articletitled, High-temperature photoluminescence in sol-gel silica containing SiC/C nanostructures

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Luminescence of Tb ions implanted into amorphous AlN thin films grown by sputtering

W. M. Jadwisienczak; H. J. Lozykowski; F. Perjeru; H. Chen; M. Kordesch; I. G. Brown

Appl. Phys. Lett. 76, 3376–3378 (2000) https://doi.org/10.1063/1.126652

View articletitled, Luminescence of Tb ions implanted into amorphous AlN thin films grown by sputtering

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Quantification of excess vacancy defects from high-energy ion implantation in Si by Au labeling

R. Kalyanaraman; T. E. Haynes; V. C. Venezia; D. C. Jacobson; H.-J. Gossmann; C. S. Rafferty

Appl. Phys. Lett. 76, 3379–3381 (2000) https://doi.org/10.1063/1.126653

View articletitled, Quantification of excess vacancy defects from high-energy ion implantation in Si by Au labeling

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Origin of preferential orthorhombic twinning in ${SrRuO}_{3}$ epitaxial thin films

Jon-Paul Maria; H. L. McKinstry; S. Trolier-McKinstry

Appl. Phys. Lett. 76, 3382–3384 (2000) https://doi.org/10.1063/1.126654

View articletitled, Origin of preferential orthorhombic twinning in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrRuO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span> epitaxial thin films

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Nickel-platinum alloy monosilicidation-induced defects in n-type silicon

D. Z. Chi; D. Mangelinck; J. Y. Dai; S. K. Lahiri; K. L. Pey; C. S. Ho

Appl. Phys. Lett. 76, 3385–3387 (2000) https://doi.org/10.1063/1.126741

View articletitled, Nickel-platinum alloy monosilicidation-induced defects in <em>n</em>-type silicon

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Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant

G. Pozina; J. P. Bergman; B. Monemar; S. Yamaguchi; H. Amano; I. Akasaki

Appl. Phys. Lett. 76, 3388–3390 (2000) https://doi.org/10.1063/1.126655

View articletitled, Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant

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Transient characteristics of self-phase modulation in liquid crystals

Hiroshi Ono; Junichi Kikuhara

Appl. Phys. Lett. 76, 3391–3393 (2000) https://doi.org/10.1063/1.126656

View articletitled, Transient characteristics of self-phase modulation in liquid crystals

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Model for decomposition and nanocrystallization of deeply undercooled ${Zr}_{41.2} {Ti}_{13.8} {Cu}_{12.5} {Ni}_{10} {Be}_{22.5}$

Jörg F. Löffler; William L. Johnson

Appl. Phys. Lett. 76, 3394–3396 (2000) https://doi.org/10.1063/1.126657

View articletitled, Model for decomposition and nanocrystallization of deeply undercooled <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Zr</mi><mrow><mi mathvariant="normal">41.2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mi mathvariant="normal">13.8</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi mathvariant="normal">12.5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ni</mi><mrow><mi mathvariant="normal">10</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Be</mi><mrow><mi mathvariant="normal">22.5</mi></mrow></msub></math></span>

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Lattice strains and composition of self-organized Ge dots grown on Si(001)

Z. M. Jiang; X. M. Jiang; W. R. Jiang; Q. J. Jia; W. L. Zheng; D. C. Qian

Appl. Phys. Lett. 76, 3397–3399 (2000) https://doi.org/10.1063/1.126658

View articletitled, Lattice strains and composition of self-organized Ge dots grown on Si(001)

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On three dimensional self-organization and optical properties of InAs quantum-dot multilayers

J. C. González; F. M. Matinaga; W. N. Rodrigues; M. V. B. Moreira; A. G. de Oliveira; M. I. N. da Silva; J. M. C. Vilela; M. S. Andrade; D. Ugarte; P. C. Silva

Appl. Phys. Lett. 76, 3400–3402 (2000) https://doi.org/10.1063/1.126659

View articletitled, On three dimensional self-organization and optical properties of InAs quantum-dot multilayers

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Relationship between segregation-induced intergranular fracture and melting in the nickel–sulfur system

J. K. Heuer; P. R. Okamoto; N. Q. Lam; J. F. Stubbins

Appl. Phys. Lett. 76, 3403–3405 (2000) https://doi.org/10.1063/1.126660

View articletitled, Relationship between segregation-induced intergranular fracture and melting in the nickel–sulfur system

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Polarized blue light-emission from epitaxially oriented bis(phenyloxazolyl)benzene crystals

Yuya Yamada; Hisao Yanagi

Appl. Phys. Lett. 76, 3406–3408 (2000) https://doi.org/10.1063/1.126661

View articletitled, Polarized blue light-emission from epitaxially oriented bis(phenyloxazolyl)benzene crystals

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Investigation of β-SiC precipitation in ${Si}_{1−y} C_{y}$ epilayers by x-ray scattering at grazing incidence

Z. Kovats; T. H. Metzger; J. Peisl; J. Stangl; M. Mühlberger; Y. Zhuang; F. Schäffler; G. Bauer

Appl. Phys. Lett. 76, 3409–3411 (2000) https://doi.org/10.1063/1.126662

View articletitled, Investigation of β-SiC precipitation in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>1−y</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mi>y</mi></mrow></msub></math></span> epilayers by x-ray scattering at grazing incidence

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Formation of periodic steps with a unit-cell height on 6H–SiC (0001) surface by HCl etching

Shun-ichi Nakamura; Tsunenobu Kimoto; Hiroyuki Matsunami; Satoru Tanaka; Nobuaki Teraguchi; Akira Suzuki

Appl. Phys. Lett. 76, 3412–3414 (2000) https://doi.org/10.1063/1.126663

View articletitled, Formation of periodic steps with a unit-cell height on 6H–SiC (0001) surface by HCl etching

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Stress relaxation of free-standing aluminum beams for microelectromechanical systems applications

Hoo-Jeong Lee; Guido Cornella; John C. Bravman

Appl. Phys. Lett. 76, 3415–3417 (2000) https://doi.org/10.1063/1.126664

View articletitled, Stress relaxation of free-standing aluminum beams for microelectromechanical systems applications

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Micro-Raman and cathodoluminescence studies of epitaxial laterally overgrown GaN with tungsten masks: A method to map the free-carrier concentration of thick GaN samples

A. Kaschner; A. Hoffmann; C. Thomsen; F. Bertram; T. Riemann; J. Christen; K. Hiramatsu; H. Sone; N. Sawaki

Appl. Phys. Lett. 76, 3418–3420 (2000) https://doi.org/10.1063/1.126665

View articletitled, Micro-Raman and cathodoluminescence studies of epitaxial laterally overgrown GaN with tungsten masks: A method to map the free-carrier concentration of thick GaN samples

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Characterization of threading dislocations in GaN epitaxial layers

T. Hino; S. Tomiya; T. Miyajima; K. Yanashima; S. Hashimoto; M. Ikeda

Appl. Phys. Lett. 76, 3421–3423 (2000) https://doi.org/10.1063/1.126666

View articletitled, Characterization of threading dislocations in GaN epitaxial layers

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Nanoquasicrystalline phase produced by devitrification of Hf–Pd–Ni–Al metallic glass

D. V. Louzguine; M. S. Ko; A. Inoue

Appl. Phys. Lett. 76, 3424–3426 (2000) https://doi.org/10.1063/1.126667

View articletitled, Nanoquasicrystalline phase produced by devitrification of Hf–Pd–Ni–Al metallic glass

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Nano-oxidation of silicon surfaces by noncontact atomic-force microscopy: Size dependence on voltage and pulse duration

Montserrat Calleja; Ricardo Garcı́a

Appl. Phys. Lett. 76, 3427–3429 (2000) https://doi.org/10.1063/1.126856

View articletitled, Nano-oxidation of silicon surfaces by noncontact atomic-force microscopy: Size dependence on voltage and pulse duration

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Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm

A. Fiore; P. Borri; W. Langbein; J. M. Hvam; U. Oesterle; R. Houdré; R. P. Stanley; M. Ilegems

Appl. Phys. Lett. 76, 3430–3432 (2000) https://doi.org/10.1063/1.126668

View articletitled, Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

The Meyer–Neldel rule in organic thin-film transistors

E. J. Meijer; M. Matters; P. T. Herwig; D. M. de Leeuw; T. M. Klapwijk

Appl. Phys. Lett. 76, 3433–3435 (2000) https://doi.org/10.1063/1.126669

View articletitled, The Meyer–Neldel rule in organic thin-film transistors

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Electron tunneling experiments on skutterudite ${Co}_{1−x} {Fe}_{x} {Sb}_{3}$ semiconductors

Jiro Nagao; Marhoun Ferhat; Hiroaki Anno; Kakuei Matsubara; Eiji Hatta; Kōichi Mukasa

Appl. Phys. Lett. 76, 3436–3438 (2000) https://doi.org/10.1063/1.126670

View articletitled, Electron tunneling experiments on skutterudite <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Co</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sb</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span> semiconductors

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From N isoelectronic impurities to N-induced bands in the ${GaN}_{x} {As}_{1−x}$ alloy

P. J. Klar; H. Grüning; W. Heimbrodt; J. Koch; F. Höhnsdorf; W. Stolz; P. M. A. Vicente; J. Camassel

Appl. Phys. Lett. 76, 3439–3441 (2000) https://doi.org/10.1063/1.126671

View articletitled, From N isoelectronic impurities to N-induced bands in the <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">GaN</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">As</mi><mrow><mtext>1−x</mtext></mrow></msub></math></span> alloy

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Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructure field-effect transistors

J. A. Garrido; B. E. Foutz; J. A. Smart; J. R. Shealy; M. J. Murphy; W. J. Schaff; L. F. Eastman; E. Muñoz

Appl. Phys. Lett. 76, 3442–3444 (2000) https://doi.org/10.1063/1.126672

View articletitled, Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructure field-effect transistors

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Focused-ion-beam writing of electrical connections into platinum oxide films

F. Machalett; K. Edinger; L. Ye; J. Melngailis; T. Venkatesan; M. Diegel; K. Steenbeck

Appl. Phys. Lett. 76, 3445–3447 (2000) https://doi.org/10.1063/1.125945

View articletitled, Focused-ion-beam writing of electrical connections into platinum oxide films

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The benzene molecule as a molecular resonant-tunneling transistor

M. Di Ventra; S. T. Pantelides; N. D. Lang

Appl. Phys. Lett. 76, 3448–3450 (2000) https://doi.org/10.1063/1.126673

View articletitled, The benzene molecule as a molecular resonant-tunneling transistor

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Low resistance Ti/Pt/Au ohmic contacts to p-type GaN

L. Zhou; W. Lanford; A. T. Ping; I. Adesida; J. W. Yang; A. Khan

Appl. Phys. Lett. 76, 3451–3453 (2000) https://doi.org/10.1063/1.126674

View articletitled, Low resistance Ti/Pt/Au ohmic contacts to <em>p</em>-type GaN

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Role of interfacial compound formation associated with the use of ZnO buffers layers in the hydride vapor phase epitaxy of GaN

Shulin Gu; Rong Zhang; Jingxi Sun; Ling Zhang; T. F. Kuech

Appl. Phys. Lett. 76, 3454–3456 (2000) https://doi.org/10.1063/1.126675

View articletitled, Role of interfacial compound formation associated with the use of ZnO buffers layers in the hydride vapor phase epitaxy of GaN

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MAGNETISM AND SUPERCONDUCTIVITY

Saturation magnetization and uniaxial magnetocrystalline anisotropy for Co-based binary and Co–Ge–Cr ternary alloys

M. Takahashi; H. Shoji; S. Kadowaki; D. D. Djayaprawira; Y. Komori; H. Domon

Appl. Phys. Lett. 76, 3457–3459 (2000) https://doi.org/10.1063/1.126676

View articletitled, Saturation magnetization and uniaxial magnetocrystalline anisotropy for Co-based binary and Co–Ge–Cr ternary alloys

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Magnetic entropy change in ${Ni}_{51.5} {Mn}_{22.7} {Ga}_{25.8}$ alloy

Feng-xia Hu; Bao-gen Shen; Ji-rong Sun

Appl. Phys. Lett. 76, 3460–3462 (2000) https://doi.org/10.1063/1.126677

View articletitled, Magnetic entropy change in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ni</mi><mrow><mi mathvariant="normal">51.5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Mn</mi><mrow><mi mathvariant="normal">22.7</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi mathvariant="normal">25.8</mi></mrow></msub></math></span> alloy

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Decomposition of susceptibility spectra in a torsion-stressed Fe-based amorphous wire

Cheol Gi Kim; Seok Soo Yoon; Seong-Cho Yu

Appl. Phys. Lett. 76, 3463–3465 (2000) https://doi.org/10.1063/1.126678

View articletitled, Decomposition of susceptibility spectra in a torsion-stressed Fe-based amorphous wire

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High- $T_{c}$ superconductor ${Bi}_{2} {Sr}_{2} {CaCu}_{2} O_{8+δ}$ tunnel junction with Zn counterelectrode

Shao-Xiong Li; Hong-Jie Tao; Yi Xuan; Bo-Ru Zhao; Zhong-Xian Zhao

Appl. Phys. Lett. 76, 3466–3468 (2000) https://doi.org/10.1063/1.126679

View articletitled, High-<span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>T</mi><mrow><mi>c</mi></mrow></msub></math></span> superconductor <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Bi</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">CaCu</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mtext>8+δ</mtext></mrow></msub></math></span> tunnel junction with Zn counterelectrode

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Effect of interfacial strain on critical temperature of ${YBa}_{2} {Cu}_{3} O_{7−δ}$ thin films

H. Y. Zhai; W. K. Chu

Appl. Phys. Lett. 76, 3469–3471 (2000) https://doi.org/10.1063/1.126680

View articletitled, Effect of interfacial strain on critical temperature of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">YBa</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mtext>7−δ</mtext></mrow></msub></math></span> thin films

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DIELECTRICS AND FERROELECTRICITY

Ferroelectricity and electronic defect characteristics of c-oriented ${Sr}_{0.25} {Ba}_{0.75} {Nb}_{2} O_{6}$ thin films deposited on Si substrates

Y. S. Yang; M. K. Ryu; H. J. Joo; S. H. Lee; S. J. Lee; K. Y. Kang; M. S. Jang

Appl. Phys. Lett. 76, 3472–3474 (2000) https://doi.org/10.1063/1.126681

View articletitled, Ferroelectricity and electronic defect characteristics of <em>c</em>-oriented <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mi mathvariant="normal">0.25</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ba</mi><mrow><mi mathvariant="normal">0.75</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Nb</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">6</mi></mrow></msub></math></span> thin films deposited on Si substrates

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INTERDISCIPLINARY AND GENERAL PHYSICS

Dependencies of secondary electron yields on work function for metals by electron and ion bombardment

M. Kudo; Y. Sakai; T. Ichinokawa

Appl. Phys. Lett. 76, 3475–3477 (2000) https://doi.org/10.1063/1.126682

View articletitled, Dependencies of secondary electron yields on work function for metals by electron and ion bombardment

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Higher-harmonics generation in tapping-mode atomic-force microscopy: Insights into the tip–sample interaction

R. Hillenbrand; M. Stark; R. Guckenberger

Appl. Phys. Lett. 76, 3478–3480 (2000) https://doi.org/10.1063/1.126683

View articletitled, Higher-harmonics generation in tapping-mode atomic-force microscopy: Insights into the tip–sample interaction

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Acoustic stop-bands in periodically microtapered optical fibers

A. Diez; G. Kakarantzas; T. A. Birks; P. St. J. Russell

Appl. Phys. Lett. 76, 3481–3483 (2000) https://doi.org/10.1063/1.126684

View articletitled, Acoustic stop-bands in periodically microtapered optical fibers

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