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LASERS, OPTICS, AND OPTOELECTRONICS

Improvement of quantum efficiency in polymer light-emitting diodes by a single-ion conductor

Tae-Woo Lee; O. Ok Park

Appl. Phys. Lett. 76, 3161–3163 (2000) https://doi.org/10.1063/1.126616

Abstract

View articletitled, Improvement of quantum efficiency in polymer light-emitting diodes by a single-ion conductor

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Mid-infrared angled-grating distributed feedback laser

R. E. Bartolo; W. W. Bewley; I. Vurgaftman; C. L. Felix; J. R. Meyer; M. J. Yang

Appl. Phys. Lett. 76, 3164–3166 (2000) https://doi.org/10.1063/1.126617

Abstract

View articletitled, Mid-infrared angled-grating distributed feedback laser

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Low-threshold interband cascade lasers with power efficiency exceeding 9%

J. D. Bruno; J. L. Bradshaw; Rui Q. Yang; J. T. Pham; D. E. Wortman

Appl. Phys. Lett. 76, 3167–3169 (2000) https://doi.org/10.1063/1.126618

Abstract

View articletitled, Low-threshold interband cascade lasers with power efficiency exceeding 9%

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Wavelength switching by positively detuned side-mode injection in semiconductor lasers

Y. Hong; K. A. Shore; J. S. Lawrence; D. M. Kane

Appl. Phys. Lett. 76, 3170–3172 (2000) https://doi.org/10.1063/1.126619

Abstract

View articletitled, Wavelength switching by positively detuned side-mode injection in semiconductor lasers

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All-optical wavelength converter and switch based on electromagnetically induced transparency

H. Schmidt; R. J. Ram

Appl. Phys. Lett. 76, 3173–3175 (2000) https://doi.org/10.1063/1.126620

Abstract

View articletitled, All-optical wavelength converter and switch based on electromagnetically induced transparency

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Picosecond dynamics of terahertz-sideband generation in far-infrared illuminated quantum wells

D. S. Citrin

Appl. Phys. Lett. 76, 3176–3178 (2000) https://doi.org/10.1063/1.126621

Abstract

View articletitled, Picosecond dynamics of terahertz-sideband generation in far-infrared illuminated quantum wells

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Spontaneous emission model of lateral light extraction from heterostructure light-emitting diodes

D. Ochoa; R. Houdré; R. P. Stanley; M. Ilegems; H. Benisty; C. Hanke; B. Borchert

Appl. Phys. Lett. 76, 3179–3181 (2000) https://doi.org/10.1063/1.126622

Abstract

View articletitled, Spontaneous emission model of lateral light extraction from heterostructure light-emitting diodes

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High-gain, reflection-double pass, Ti:sapphire continuous-wave amplifier delivering 5.77 W average power, 82 MHz repetition rate, femtosecond pulses

Zhenlin Liu; Hidetoshi Murakami; Toshimasa Kozeki; Hideyuki Ohtake; Nobuhiko Sarukura

Appl. Phys. Lett. 76, 3182–3184 (2000) https://doi.org/10.1063/1.126639

Abstract

View articletitled, High-gain, reflection-double pass, Ti:sapphire continuous-wave amplifier delivering 5.77 W average power, 82 MHz repetition rate, femtosecond pulses

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Wavelength monitor based on two single-quantum-well absorbers sampling a standing wave pattern

H. L. Kung; D. A. B. Miller; P. Atanackovic; C. C. Lin; J. S. Harris, Jr.; L. Carraresi; J. E. Cunningham; W. Y. Jan

Appl. Phys. Lett. 76, 3185–3187 (2000) https://doi.org/10.1063/1.126623

Abstract

View articletitled, Wavelength monitor based on two single-quantum-well absorbers sampling a standing wave pattern

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Photoluminescence studies of type-II self-assembled ${In}_{0.55} {Al}_{0.45} {As/Al}_{0.5} {Ga}_{0.5} As$ quantum dots grown on $(311)A$ GaAs substrate

Y. Chen; G. H. Li; Z. M. Zhu; H. X. Han; Z. P. Wang; W. Zhou; Z. G. Wang

Appl. Phys. Lett. 76, 3188–3190 (2000) https://doi.org/10.1063/1.126624

Abstract

View articletitled, Photoluminescence studies of type-II self-assembled <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mtext>0.55</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mtext>0.45</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">As/Al</mi><mrow><mtext>0.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>0.5</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math> quantum dots grown on <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(311)A</mtext></math> GaAs substrate

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Generation and field-resolved detection of femtosecond electromagnetic pulses tunable up to 41 THz

R. Huber; A. Brodschelm; F. Tauser; A. Leitenstorfer

Appl. Phys. Lett. 76, 3191–3193 (2000) https://doi.org/10.1063/1.126625

Abstract

View articletitled, Generation and field-resolved detection of femtosecond electromagnetic pulses tunable up to 41 THz

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Oxidation resistance of protective coatings studied by spectroscopic ellipsometry

P. Hones; C. Zakri; P. E. Schmid; F. Lévy; O. R. Shojaei

Appl. Phys. Lett. 76, 3194–3196 (2000) https://doi.org/10.1063/1.126626

Abstract

View articletitled, Oxidation resistance of protective coatings studied by spectroscopic ellipsometry

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Annealing of ultrashallow $p^{+} /n$ junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths

Y. F. Chong; K. L. Pey; A. T. S. Wee; A. See; L. Chan; Y. F. Lu; W. D. Song; L. H. Chua

Appl. Phys. Lett. 76, 3197–3199 (2000) https://doi.org/10.1063/1.126627

Abstract

View articletitled, Annealing of ultrashallow <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi>p</mi><mrow><mi>+</mi></mrow></msup><mi xmlns="">/n</mi></math> junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths

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Organic probe for inhomogeneous band bending

S. Park; T. U. Kampen; D. R. T. Zahn; W. Braun

Appl. Phys. Lett. 76, 3200–3202 (2000) https://doi.org/10.1063/1.126628

Abstract

View articletitled, Organic probe for inhomogeneous band bending

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Resistless pattern definition and Si selective-area deposition using an ultrathin ${SiO}_{2}$ mask layer treated by ${SiHCl}_{3}$

T. Yasuda; M. Nishizawa; S. Yamasaki

Appl. Phys. Lett. 76, 3203–3205 (2000) https://doi.org/10.1063/1.126629

Abstract

View articletitled, Resistless pattern definition and Si selective-area deposition using an ultrathin <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> mask layer treated by <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiHCl</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math>

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Implanted argon atoms as sensing probes of residual stress in ultrathin films

W. Lu; K. Komvopoulos

Appl. Phys. Lett. 76, 3206–3208 (2000) https://doi.org/10.1063/1.126630

Abstract

View articletitled, Implanted argon atoms as sensing probes of residual stress in ultrathin films

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Ultraviolet photoluminescence of porous silica

N. Chiodini; F. Meinardi; F. Morazzoni; A. Paleari; R. Scotti; D. Di Martino

Appl. Phys. Lett. 76, 3209–3211 (2000) https://doi.org/10.1063/1.126631

Abstract

View articletitled, Ultraviolet photoluminescence of porous silica

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Selective growth of InGaN quantum dot structures and their microphotoluminescence at room temperature

Koichi Tachibana; Takao Someya; Satomi Ishida; Yasuhiko Arakawa

Appl. Phys. Lett. 76, 3212–3214 (2000) https://doi.org/10.1063/1.126632

Abstract

View articletitled, Selective growth of InGaN quantum dot structures and their microphotoluminescence at room temperature

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Nanoscale pattern formation in Pt thin films due to ion-beam-induced dewetting

Xiaoyuan Hu; David G. Cahill; Robert S. Averback

Appl. Phys. Lett. 76, 3215–3217 (2000) https://doi.org/10.1063/1.126633

Abstract

View articletitled, Nanoscale pattern formation in Pt thin films due to ion-beam-induced dewetting

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Ordering and orientation of ${CoPt/SiO}_{2}$ granular films with additive Ag

Chen Chen; Osamu Kitakami; Satoshi Okamoto; Yutaka Shimada

Appl. Phys. Lett. 76, 3218–3220 (2000) https://doi.org/10.1063/1.126634

Abstract

View articletitled, Ordering and orientation of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CoPt/SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> granular films with additive Ag

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Dielectric constant measurement of thin films by differential time-domain spectroscopy

Zhiping Jiang; Ming Li; X.-C. Zhang

Appl. Phys. Lett. 76, 3221–3223 (2000) https://doi.org/10.1063/1.126587

Abstract

View articletitled, Dielectric constant measurement of thin films by differential time-domain spectroscopy

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Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxy

H. Y. Huang; C. K. Shu; W. C. Lin; C. H. Chuang; M. C. Lee; W. K. Chen; Y. Y. Lee

Appl. Phys. Lett. 76, 3224–3226 (2000) https://doi.org/10.1063/1.126588

Abstract

View articletitled, Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxy

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Optical properties of self-assembled thin-film of poly $(p$ -phenylene vinylene)s and its application to light-emitting devices with microring geometry

T. Sonoda; T. Fujisawa; A. Fujii; K. Yoshino

Appl. Phys. Lett. 76, 3227–3229 (2000) https://doi.org/10.1063/1.126589

Abstract

View articletitled, Optical properties of self-assembled thin-film of poly<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(p</mi></math>-phenylene vinylene)s and its application to light-emitting devices with microring geometry

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Dynamic strength of aluminum single crystals at melting

G. I. Kanel; K. Baumung; J. Singer; S. V. Razorenov

Appl. Phys. Lett. 76, 3230–3232 (2000) https://doi.org/10.1063/1.126590

Abstract

View articletitled, Dynamic strength of aluminum single crystals at melting

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Surface relief gratings from electrostatically layered azo dye films

Jin-An He; Shaoping Bian; Lian Li; Jayant Kumar; Sukant K. Tripathy; Lynne A. Samuelson

Appl. Phys. Lett. 76, 3233–3235 (2000) https://doi.org/10.1063/1.126591

Abstract

View articletitled, Surface relief gratings from electrostatically layered azo dye films

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Control of phase modulation in InGaAs epilayers

D. González; G. Aragón; D. Araújo; R. Garcı́a

Appl. Phys. Lett. 76, 3236–3238 (2000) https://doi.org/10.1063/1.126592

Abstract

View articletitled, Control of phase modulation in InGaAs epilayers

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Long ropes of boron nitride nanotubes grown by a continuous laser heating

Thomas Laude; Yoshio Matsui; Alain Marraud; Bernard Jouffrey

Appl. Phys. Lett. 76, 3239–3241 (2000) https://doi.org/10.1063/1.126593

Abstract

View articletitled, Long ropes of boron nitride nanotubes grown by a continuous laser heating

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Comparison of Si doping effect in optical properties of GaN epilayers and ${In}_{x} {Ga}_{1−x} N$ quantum wells

Eunsoon Oh; Cheolsoo Sone; Okhyun Nam; Hyeongsoo Park; Yongjo Park

Appl. Phys. Lett. 76, 3242–3244 (2000) https://doi.org/10.1063/1.126594

Abstract

View articletitled, Comparison of Si doping effect in optical properties of GaN epilayers and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">N</mi></math> quantum wells

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Photocarrier injection effect on double exchange ferromagnetism in ${(La, Sr)MnO}_{3} {/SrTiO}_{3}$ heterostructure

Hayato Katsu; Hidekazu Tanaka; Tomoji Kawai

Appl. Phys. Lett. 76, 3245–3247 (2000) https://doi.org/10.1063/1.126595

Abstract

View articletitled, Photocarrier injection effect on double exchange ferromagnetism in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">(La, Sr)MnO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">/SrTiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> heterostructure

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Temperature-independent switching rates for a random telegraph signal in a silicon metal–oxide–semiconductor field-effect transistor at low temperatures

John H. Scofield; Nick Borland; D. M. Fleetwood

Appl. Phys. Lett. 76, 3248–3250 (2000) https://doi.org/10.1063/1.126596

Abstract

View articletitled, Temperature-independent switching rates for a random telegraph signal in a silicon metal–oxide–semiconductor field-effect transistor at low temperatures

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Nature of the fundamental band gap in ${GaN}_{x} P_{1−x}$ alloys

W. Shan; W. Walukiewicz; K. M. Yu; J. Wu; J. W. Ager, III; E. E. Haller; H. P. Xin; C. W. Tu

Appl. Phys. Lett. 76, 3251–3253 (2000) https://doi.org/10.1063/1.126597

Abstract

View articletitled, Nature of the fundamental band gap in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">GaN</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">P</mi><mrow><mtext>1−x</mtext></mrow></msub></math> alloys

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Large electrically induced transmission changes of GaAs/AlGaAs quantum-cascade structures

F. Eickemeyer; R. A. Kaindl; M. Woerner; T. Elsaesser; S. Barbieri; P. Kruck; C. Sirtori; J. Nagle

Appl. Phys. Lett. 76, 3254–3256 (2000) https://doi.org/10.1063/1.126598

Abstract

View articletitled, Large electrically induced transmission changes of GaAs/AlGaAs quantum-cascade structures

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ZnO diode fabricated by excimer-laser doping

Toru Aoki; Yoshinori Hatanaka; David C. Look

Appl. Phys. Lett. 76, 3257–3258 (2000) https://doi.org/10.1063/1.126599

Abstract

View articletitled, ZnO diode fabricated by excimer-laser doping

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Random telegraph signals and low-frequency noise in n-metal–oxide–semiconductor field-effect transistors with ultranarrow channels

H. M. Bu; Y. Shi; X. L. Yuan; J. Wu; S. L. Gu; Y. D. Zheng; H. Majima; H. Ishikuro; T. Hiramoto

Appl. Phys. Lett. 76, 3259–3261 (2000) https://doi.org/10.1063/1.126600

Abstract

View articletitled, Random telegraph signals and low-frequency noise in n-metal–oxide–semiconductor field-effect transistors with ultranarrow channels

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Ultranarrow polaritons in a semiconductor microcavity

J. R. Jensen; P. Borri; W. Langbein; J. M. Hvam

Appl. Phys. Lett. 76, 3262–3264 (2000) https://doi.org/10.1063/1.126601

Abstract

View articletitled, Ultranarrow polaritons in a semiconductor microcavity

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Complete surface exfoliation of 4H–SiC by $H^{+}$ - and ${Si}^{+}$ -coimplantation

J. A. Bennett; O. W. Holland; M. Budde; D. K. Thomas; L. C. Feldman

Appl. Phys. Lett. 76, 3265–3267 (2000) https://doi.org/10.1063/1.126640

Abstract

View articletitled, Complete surface exfoliation of 4H–SiC by <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">H</mi><mrow><mi mathvariant="normal">+</mi></mrow></msup></math>- and <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Si</mi><mrow><mi mathvariant="normal">+</mi></mrow></msup></math>-coimplantation

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Low-frequency noise in gate overlapped lightly doped drain polycrystalline silicon thin-film transistors

S. Giovannini; A. Bove; A. Valletta; L. Mariucci; A. Pecora; G. Fortunato

Appl. Phys. Lett. 76, 3268–3270 (2000) https://doi.org/10.1063/1.126602

Abstract

View articletitled, Low-frequency noise in gate overlapped lightly doped drain polycrystalline silicon thin-film transistors

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Formation of silicon islands on a silicon on insulator substrate upon thermal annealing

B. Legrand; V. Agache; J. P. Nys; V. Senez; D. Stievenard

Appl. Phys. Lett. 76, 3271–3273 (2000) https://doi.org/10.1063/1.126603

Abstract

View articletitled, Formation of silicon islands on a silicon on insulator substrate upon thermal annealing

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MAGNETISM AND SUPERCONDUCTIVITY

Unprecedented magnetoresistance in Cd-substituted ${Tl}_{2} {Mn}_{2} O_{7}$ pyrochlores

J. A. Alonso; P. Velasco; M. J. Martı́nez-Lope; M. T. Casais; J. L. Martı́nez; Marı́a T. Fernández-Dı́az; J. M. de Paoli

Appl. Phys. Lett. 76, 3274–3276 (2000) https://doi.org/10.1063/1.126604

Abstract

View articletitled, Unprecedented magnetoresistance in Cd-substituted <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Tl</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Mn</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">7</mi></mrow></msub></math> pyrochlores

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Low-frequency noise reduction in ${YBa}_{2} {Cu}_{3} O_{7−δ}$ superconducting quantum interference devices by antidots

P. Selders; R. Wördenweber

Appl. Phys. Lett. 76, 3277–3279 (2000) https://doi.org/10.1063/1.126605

Abstract

View articletitled, Low-frequency noise reduction in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">YBa</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mtext>7−δ</mtext></mrow></msub></math> superconducting quantum interference devices by antidots

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Epitaxial growth and magnetic properties of single-crystal ${Co}_{2} MnGe$ Heusler alloy films on GaAs (001)

T. Ambrose; J. J. Krebs; G. A. Prinz

Appl. Phys. Lett. 76, 3280–3282 (2000) https://doi.org/10.1063/1.126606

Abstract

View articletitled, Epitaxial growth and magnetic properties of single-crystal <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Co</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">MnGe</mi></math> Heusler alloy films on GaAs (001)

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Hall cross size scaling and its application to measurements on nanometer-size iron particle arrays

S. Wirth; S. von Molnár

Appl. Phys. Lett. 76, 3283–3285 (2000) https://doi.org/10.1063/1.126607

Abstract

View articletitled, Hall cross size scaling and its application to measurements on nanometer-size iron particle arrays

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Magnetoresistive tunnel junctions deposited on laterally modulated substrates

F. Montaigne; P. Gogol; J. Briatico; J. L. Maurice; F. Nguyen Van Dau; F. Petroff; A. Fert; A. Schuhl

Appl. Phys. Lett. 76, 3286–3288 (2000) https://doi.org/10.1063/1.126608

Abstract

View articletitled, Magnetoresistive tunnel junctions deposited on laterally modulated substrates

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Critical temperature depression and persistent photoconductivity in ion irradiated ${YBa}_{2} {Cu}_{3} O_{7−x}$ films and ${YBa}_{2} {Cu}_{3} O_{7−x} / {PrBa}_{2} {Cu}_{3} O_{7}$ superlattices

M. A. Navacerrada; D. Arias; Z. Sefrioui; G. Loos; M. L. Lucı́a; J. Santamarı́a; F. Sánchez-Quesada; M. Varela

Appl. Phys. Lett. 76, 3289–3291 (2000) https://doi.org/10.1063/1.126609

Abstract

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DIELECTRICS AND FERROELECTRICITY

Evaluation of niobium effects on the longitudinal piezoelectric coefficients of ${Pb(Zr, Ti)O}_{3}$ thin films

T. Haccart; E. Cattan; D. Remiens; S. Hiboux; P. Muralt

Appl. Phys. Lett. 76, 3292–3294 (2000) https://doi.org/10.1063/1.126610

Abstract

View articletitled, Evaluation of niobium effects on the longitudinal piezoelectric coefficients of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pb(Zr, Ti)O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> thin films

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Simultaneous imaging of dielectric properties and topography in a ${PbTiO}_{3}$ crystal by near-field scanning microwave microscopy

Y. G. Wang; M. E. Reeves; F. J. Rachford

Appl. Phys. Lett. 76, 3295–3297 (2000) https://doi.org/10.1063/1.126611

Abstract

View articletitled, Simultaneous imaging of dielectric properties and topography in a <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">PbTiO</mi><mrow><mn>3</mn></mrow></msub></math> crystal by near-field scanning microwave microscopy

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DEVICE PHYSICS

AlGaN–GaN–AlInGaN induced base transistor

M. S. Shur; A. D. Bykhovski; R. Gaska; M. A. Khan; J. W. Yang

Appl. Phys. Lett. 76, 3298–3300 (2000) https://doi.org/10.1063/1.126612

Abstract

View articletitled, AlGaN–GaN–AlInGaN induced base transistor

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Photovoltaic quantum-dot infrared detectors

Dong Pan; Elias Towe; Steve Kennerly

Appl. Phys. Lett. 76, 3301–3303 (2000) https://doi.org/10.1063/1.126613

Abstract

View articletitled, Photovoltaic quantum-dot infrared detectors

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Direct response of twin-slot antenna-coupled hot-electron bolometer mixers designed for 2.5 THz radiation detection

W. F. M. Ganzevles; L. R. Swart; J. R. Gao; P. A. J. de Korte; T. M. Klapwijk

Appl. Phys. Lett. 76, 3304–3306 (2000) https://doi.org/10.1063/1.126614

Abstract

View articletitled, Direct response of twin-slot antenna-coupled hot-electron bolometer mixers designed for 2.5 THz radiation detection

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Reliable contacts to two-dimensional conduction layers

Victor Souw; Shi Li; M. McElfresh; Zhan Duan; D. McInturff; Aristo Yulius; E.-H. Chen; J. M. Woodall

Appl. Phys. Lett. 76, 3307–3309 (2000) https://doi.org/10.1063/1.126615

Abstract

View articletitled, Reliable contacts to two-dimensional conduction layers

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INTERDISCIPLINARY AND GENERAL PHYSICS

Particle imaging technique for measuring the deformation rate of hydrogel microstructures

Michael G. Olsen; Joseph M. Bauer; David J. Beebe

Appl. Phys. Lett. 76, 3310–3312 (2000) https://doi.org/10.1063/1.126635

Abstract

View articletitled, Particle imaging technique for measuring the deformation rate of hydrogel microstructures

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Electrochemical passivation of gallium arsenide surface with organic self-assembled monolayers in aqueous electrolytes

Klaus Adlkofer; Motomu Tanaka; Heiko Hillebrandt; Gerald Wiegand; Erich Sackmann; Tibor Bolom; Rainer Deutschmann; Gerhard Abstreiter

Appl. Phys. Lett. 76, 3313–3315 (2000) https://doi.org/10.1063/1.126636

Abstract

View articletitled, Electrochemical passivation of gallium arsenide surface with organic self-assembled monolayers in aqueous electrolytes

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High-resolution micromachined interferometric accelerometer

E. B. Cooper; E. R. Post; S. Griffith; J. Levitan; S. R. Manalis; M. A. Schmidt; C. F. Quate

Appl. Phys. Lett. 76, 3316–3318 (2000) https://doi.org/10.1063/1.126637

Abstract

View articletitled, High-resolution micromachined interferometric accelerometer

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Maskless fabrication of field-emitter array by focused ion and electron beam

O. Yavas; C. Ochiai; M. Takai; A. Hosono; S. Okuda

Appl. Phys. Lett. 76, 3319–3321 (2000) https://doi.org/10.1063/1.126638

Abstract

View articletitled, Maskless fabrication of field-emitter array by focused ion and electron beam

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

DEVICE PHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

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