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Volume 76, Issue 21

22 May 2000

Applied Physics Letters Cover Image for Volume 76, Issue 21

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
PLASMAS AND ELECTRICAL DISCHARGES
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
DEVICE PHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS

LASERS, OPTICS, AND OPTOELECTRONICS

Influence of Cs and Ag metal vapor on output characteristics of a HyBrID copper vapor laser

Akira Ohzu; Masaaki Kato; Yoichiro Maruyama

Appl. Phys. Lett. 76, 2979–2981 (2000) https://doi.org/10.1063/1.126551

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Room-temperature triangular-lattice two-dimensional photonic band gap lasers operating at 1.54 μm

Jeong-Ki Hwang; Han-Youl Ryu; Dae-Sung Song; Il-Young Han; Hyun-Woo Song; Hong-Kyu Park; Yong-Hee Lee; Dong-Hoon Jang

Appl. Phys. Lett. 76, 2982–2984 (2000) https://doi.org/10.1063/1.126552

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Organic light-emitting diodes using an in situ thermally polymerized hole transporting layer

Xuezhong Jiang; Sen Liu; Michelle S. Liu; Hong Ma; Alex K.-Y. Jen

Appl. Phys. Lett. 76, 2985–2987 (2000) https://doi.org/10.1063/1.126553

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Dynamics of carriers in resonantly excited quantum-well lasers studied by intersubband absorption

I. Shtrichman; U. Mizrahi; D. Gershoni; E. Ehrenfreund; K. D. Maranowski; A. C. Gossard

Appl. Phys. Lett. 76, 2988–2990 (2000) https://doi.org/10.1063/1.126554

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High duty cycle and continuous terahertz emission from germanium

Erik Bründermann; Danielle R. Chamberlin; Eugene E. Haller

Appl. Phys. Lett. 76, 2991–2993 (2000) https://doi.org/10.1063/1.126555

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Doping-dependent optical gain in GaN

Peter Ramvall; Yoshinobu Aoyagi; Akito Kuramata; Peter Hacke; Kay Domen; Kazuhiko Horino

Appl. Phys. Lett. 76, 2994–2996 (2000) https://doi.org/10.1063/1.126556

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Microlaser made of disordered media

H. Cao; J. Y. Xu; E. W. Seelig; R. P. H. Chang

Appl. Phys. Lett. 76, 2997–2999 (2000) https://doi.org/10.1063/1.126557

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PLASMAS AND ELECTRICAL DISCHARGES

Cluster formation by barrier discharge in simulated engine exhaust gas at high temperature

John W. Hoard; Evgenii V. Kalashnikov; Joseph J. Szente; Diane H. Podsiadlik

Appl. Phys. Lett. 76, 3000–3001 (2000) https://doi.org/10.1063/1.126558

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Plasma drift and nonuniformity effects in plasma immersion ion implantation

M. Keidar; O. R. Monteiro; I. G. Brown

Appl. Phys. Lett. 76, 3002–3004 (2000) https://doi.org/10.1063/1.126559

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Defect in the circular-circularly rubbed liquid crystal cell with off-center alignment

Zhizhong Zhuang; Seong-Woo Suh; Young Jin Kim; J. S. Patel

Appl. Phys. Lett. 76, 3005–3007 (2000) https://doi.org/10.1063/1.126560

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A promising pathway to make multiwalled carbon nanotubes

A. A. Setlur; S. P. Doherty; J. Y. Dai; R. P. H. Chang

Appl. Phys. Lett. 76, 3008–3010 (2000) https://doi.org/10.1063/1.126561

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Investigation of the formation of the 2.8 eV luminescence band in p-type GaN:Mg

F. Shahedipour; B. W. Wessels

Appl. Phys. Lett. 76, 3011–3013 (2000) https://doi.org/10.1063/1.126562

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Softening and mode crossing of the lowest-frequency $A_{1} (transverse-optical)$ phonon in single-crystal ${PbTiO}_{3}$

Seong M. Cho; Hyun M. Jang

Appl. Phys. Lett. 76, 3014–3016 (2000) https://doi.org/10.1063/1.126563

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Mechanical behavior of thin buffer layers in $InAs/GaAs(111) A$ heteroepitaxy

Rodney I. Pelzel; Luis A. Zepeda-Ruiz; Brett Z. Nosho; Youli Li; W. Henry Weinberg; Dimitrios Maroudas

Appl. Phys. Lett. 76, 3017–3019 (2000) https://doi.org/10.1063/1.126564

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Silicon nanowires grown on iron-patterned silicon substrates

Qian Gu; Haiyan Dang; Jien Cao; Jianhong Zhao; Shoushan Fan

Appl. Phys. Lett. 76, 3020–3021 (2000) https://doi.org/10.1063/1.126565

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Stabilization of strained alloy film growth by a difference in atomic mobilities

B. J. Spencer; P. W. Voorhees; J. Tersoff

Appl. Phys. Lett. 76, 3022–3024 (2000) https://doi.org/10.1063/1.126566

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Optical characterization of high-purity cubic GaN grown on GaAs (001) substrate by metalorganic chemical vapor deposition

Dapeng Xu; Hui Yang; J. B. Li; D. G. Zhao; S. F. Li; S. M. Zhuang; R. H. Wu; Y. Chen; G. H. Li

Appl. Phys. Lett. 76, 3025–3027 (2000) https://doi.org/10.1063/1.126567

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Growth of AlGaN on Si(111) by gas source molecular beam epitaxy

S. A. Nikishin; N. N. Faleev; A. S. Zubrilov; V. G. Antipov; H. Temkin

Appl. Phys. Lett. 76, 3028–3030 (2000) https://doi.org/10.1063/1.126568

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Spatially resolved band-edge emission from partially coalesced GaN pyramids prepared by epitaxial lateral overgrowth

X. Li; P. W. Bohn; Jeongyong Kim; J. O. White; J. J. Coleman

Appl. Phys. Lett. 76, 3031–3033 (2000) https://doi.org/10.1063/1.126569

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Desorption of organic species from the GaAs (100) surface at low temperatures using low energy electron irradiation in a hydrogen ambient

Y. Chen; J. Schmidt; L. Šiller; J. C. Barnard; R. E. Palmer; T. M. Burke; M. P. Smith; S. J. Brown; D. A. Ritchie; M. Pepper

Appl. Phys. Lett. 76, 3034–3036 (2000) https://doi.org/10.1063/1.126570

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Nano-icosahedral quasicrystalline phase formation from a supercooled liquid state in Zr–Fe–Ni ternary metallic glass

Junji Saida; Chunfei Li; Mitsuhide Matsushita; Akihisa Inoue

Appl. Phys. Lett. 76, 3037–3039 (2000) https://doi.org/10.1063/1.126571

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Well-width dependence of the quantum efficiencies of ${GaN/Al}_{x} {Ga}_{1−x} N$ multiple quantum wells

K. C. Zeng; J. Li; J. Y. Lin; H. X. Jiang

Appl. Phys. Lett. 76, 3040–3042 (2000) https://doi.org/10.1063/1.126572

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Correlation between strain and dielectric properties in ${ZrTiO}_{4}$ thin films

Taeseok Kim; Jeongmin Oh; Byungwoo Park; Kug Sun Hong

Appl. Phys. Lett. 76, 3043–3045 (2000) https://doi.org/10.1063/1.126573

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Effect of strain transfer on critical thickness for epitaxial layers grown on compliant substrate

F. Y. Huang

Appl. Phys. Lett. 76, 3046–3048 (2000) https://doi.org/10.1063/1.126574

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Vertical motional narrowing of exciton polaritons in GaN based multiple quantum wells

Guillaume Malpuech; Alexey Kavokin

Appl. Phys. Lett. 76, 3049–3051 (2000) https://doi.org/10.1063/1.126575

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Ultrahard carbon nanocomposite films

M. P. Siegal; D. R. Tallant; P. N. Provencio; D. L. Overmyer; R. L. Simpson; L. J. Martinez-Miranda

Appl. Phys. Lett. 76, 3052–3054 (2000) https://doi.org/10.1063/1.126576

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Mapping electrostatic potential across an AlGaN/InGaN/AlGaN diode by electron holography

M. R. McCartney; F. A. Ponce; Juan Cai; D. P. Bour

Appl. Phys. Lett. 76, 3055–3057 (2000) https://doi.org/10.1063/1.126577

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Transient-enhanced diffusion of boron implanted at ultralow energies in silicon: Localization of the source

E. Schroer; V. Privitera; F. Priolo; E. Napolitani; A. Carnera

Appl. Phys. Lett. 76, 3058–3060 (2000) https://doi.org/10.1063/1.126578

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Accumulation hole layer in $p- GaN/AlGaN$ heterostructures

M. S. Shur; A. D. Bykhovski; R. Gaska; J. W. Yang; G. Simin; M. A. Khan

Appl. Phys. Lett. 76, 3061–3063 (2000) https://doi.org/10.1063/1.126579

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Optically and thermally detected deep levels in n-type Schottky and $p^{+} -n$ GaN diodes

A. Hierro; D. Kwon; S. A. Ringel; M. Hansen; J. S. Speck; U. K. Mishra; S. P. DenBaars

Appl. Phys. Lett. 76, 3064–3066 (2000) https://doi.org/10.1063/1.126580

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Trapping levels in nanocrystalline porous silicon

M. L. Ciurea; M. Drãghici; S. Lazanu; V. Iancu; A. Nassiopoulou; V. Ioannou; V. Tsakiri

Appl. Phys. Lett. 76, 3067–3069 (2000) https://doi.org/10.1063/1.126581

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Growth oscillation decay rates for control of III–V molecular beam epitaxy near stoichiometry

J. H. G. Owen; W. Barvosa-Carter; J. J. Zinck

Appl. Phys. Lett. 76, 3070–3072 (2000) https://doi.org/10.1063/1.126582

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Interfacial properties of (111)A GaAs/AlGaAs multiquantum-well structures grown by metalorganic vapor phase epitaxy

A. Sanz-Hervás; Soohaeng Cho; A. Majerfeld; B. W. Kim

Appl. Phys. Lett. 76, 3073–3075 (2000) https://doi.org/10.1063/1.126583

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Metal-oxide-silicon diodes on deuterium-implanted silicon substrate

D. Misra; R. K. Jarwal

Appl. Phys. Lett. 76, 3076–3078 (2000) https://doi.org/10.1063/1.126584

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Reactivation of Mg acceptor in Mg-doped GaN by nitrogen plasma treatment

Sang-Woo Kim; Ji-Myon Lee; Chul Huh; Nae-Man Park; Hyun-Soo Kim; In-Hwan Lee; Seong-Ju Park

Appl. Phys. Lett. 76, 3079–3081 (2000) https://doi.org/10.1063/1.126585

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Growth of vertically self-organized InGaAs quantum dots with narrow inhomogeneous broadening

Qianghua Xie; J. L. Brown; R. L. Jones; J. E. Van Nostrand; K. D. Leedy

Appl. Phys. Lett. 76, 3082–3084 (2000) https://doi.org/10.1063/1.126586

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An enhanced resolution technique for determination of the distribution of localized states in semiconductors from transient photocurrents

C. Main; S. Reynolds

Appl. Phys. Lett. 76, 3085–3087 (2000) https://doi.org/10.1063/1.126531

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MAGNETISM AND SUPERCONDUCTIVITY

Doping dependence of the Josephson coupling in ${Bi}_{2} {Sr}_{2} {Ca}_{1−x} {Gd}_{x} {Cu}_{2} O_{8+δ}$ single crystals

X.-G. Li; X. Zhao; X. J. Fan; X. F. Sun; W. B. Wu; H. Zhang

Appl. Phys. Lett. 76, 3088–3090 (2000) https://doi.org/10.1063/1.126532

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Epitaxial Fe (001) micro tiling: Size and interaction effects

J. L. Costa-Krämer; J. I. Martı́n; J. L. Menéndez; A. Cebollada; J. V. Anguita; F. Briones; J. L. Vicent

Appl. Phys. Lett. 76, 3091–3093 (2000) https://doi.org/10.1063/1.126533

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Quantitative determination of the magnetization and stray field of a single domain Co/Pt dot with magnetic force microscopy

J. Lohau; S. Kirsch; A. Carl; E. F. Wassermann

Appl. Phys. Lett. 76, 3094–3096 (2000) https://doi.org/10.1063/1.126534

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Thermal stability of IrMn and MnFe exchange-biased magnetic tunnel junctions

Mahesh G. Samant; Jan Lüning; Joachim Stöhr; Stuart S. P. Parkin

Appl. Phys. Lett. 76, 3097–3099 (2000) https://doi.org/10.1063/1.126535

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DIELECTRICS AND FERROELECTRICITY

Dielectric properties of pulsed-laser-deposited calcium titanate thin films

Jianhua Hao; Weidong Si; X. X. Xi; Ruyan Guo; A. S. Bhalla; L. E. Cross

Appl. Phys. Lett. 76, 3100–3102 (2000) https://doi.org/10.1063/1.126536

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Effect of uniaxial stress on the polarization of ${SrBi}_{2} {Ta}_{2} O_{9}$ thin films

Xiaomei Lü; Jinsong Zhu; Xuelian Li; Zhigang Zhang; Xuesong Zhang; Di Wu; Fen Yan; Yong Ding; Yening Wang

Appl. Phys. Lett. 76, 3103–3105 (2000) https://doi.org/10.1063/1.126537

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Epitaxial ${Pb(Mg}_{1/3} {Nb}_{2/3}) O_{3}$ thin films synthesized by metal-organic chemical vapor deposition

G. R. Bai; S. K. Streiffer; P. K. Baumann; O. Auciello; K. Ghosh; S. Stemmer; A. Munkholm; Carol Thompson; R. A. Rao; C. B. Eom

Appl. Phys. Lett. 76, 3106–3108 (2000) https://doi.org/10.1063/1.126538

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The role of interface states in hydrogen-annealing-induced mobile proton generation at the ${Si–SiO}_{2}$ interface

K. Vanheusden; R. A. B. Devine

Appl. Phys. Lett. 76, 3109–3111 (2000) https://doi.org/10.1063/1.126539

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Ferroelectric properties of ${Sr}_{2} {Bi}_{4} {Ti}_{5} O_{18}$ thin films

S. T. Zhang; C. S. Xiao; A. A. Fang; B. Yang; B. Sun; Y. F. Chen; Z. G. Liu; N. B. Ming

Appl. Phys. Lett. 76, 3112–3114 (2000) https://doi.org/10.1063/1.126540

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DEVICE PHYSICS

Effect of Mg ionization efficiency on performance of $Npn$ AlGaN/GaN heterojunction bipolar transistors

C. Monier; S. J. Pearton; P. C. Chang; A. G. Baca; F. Ren

Appl. Phys. Lett. 76, 3115–3117 (2000) https://doi.org/10.1063/1.126541

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Enhanced effect of polarization on electron transport properties in AlGaN/GaN double-heterostructure field-effect transistors

Narihiko Maeda; Tadashi Saitoh; Kotaro Tsubaki; Toshio Nishida; Naoki Kobayashi

Appl. Phys. Lett. 76, 3118–3120 (2000) https://doi.org/10.1063/1.126542

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Si complementary single-electron inverter with voltage gain

Yukinori Ono; Yasuo Takahashi; Kenji Yamazaki; Masao Nagase; Hideo Namatsu; Kenji Kurihara; Katsumi Murase

Appl. Phys. Lett. 76, 3121–3123 (2000) https://doi.org/10.1063/1.126543

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${In}_{0.34} {Al}_{0.66} {As}_{0.85} {Sb}_{0.15} {/δ(n}^{+})- InP$ heterostructure field-effect transistors

Y. S. Lin; W. C. Hsu; C. Y. Yeh; H. M. Shieh

Appl. Phys. Lett. 76, 3124–3126 (2000) https://doi.org/10.1063/1.126544

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INTERDISCIPLINARY AND GENERAL PHYSICS

Trajectory overlaps and local magnification in three-dimensional atom probe

F. Vurpillot; A. Bostel; D. Blavette

Appl. Phys. Lett. 76, 3127–3129 (2000) https://doi.org/10.1063/1.126545

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Locally enhanced Raman spectroscopy with an atomic force microscope

Mark S. Anderson

Appl. Phys. Lett. 76, 3130–3132 (2000) https://doi.org/10.1063/1.126546

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Acoustic microscope based on magneto-elastic wave phase conjugator

A. Brysev; L. Krutyansky; P. Pernod; V. Preobrazhensky

Appl. Phys. Lett. 76, 3133–3135 (2000) https://doi.org/10.1063/1.126547

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Growth and fabrication with single-walled carbon nanotube probe microscopy tips

Chin Li Cheung; Jason H. Hafner; Teri W. Odom; Kyoungha Kim; Charles M. Lieber

Appl. Phys. Lett. 76, 3136–3138 (2000) https://doi.org/10.1063/1.126548

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Atomic force microscopy using an integrated comb-shape electrostatic actuator for high-speed feedback motion

T. Akiyama; U. Staufer; N. F. de Rooij

Appl. Phys. Lett. 76, 3139–3141 (2000) https://doi.org/10.1063/1.126549

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Defect-assisted tunneling current: A revised interpretation of scanning tunneling spectroscopy measurements

B. Grandidier; X. de la Broise; D. Stiévenard; C. Delerue; M. Lannoo; M. Stellmacher; J. Bourgoin

Appl. Phys. Lett. 76, 3142–3144 (2000) https://doi.org/10.1063/1.126550

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