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Volume 76, Issue 20

15 May 2000

Applied Physics Letters Cover Image for Volume 76, Issue 20

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
PLASMAS AND ELECTRICAL DISCHARGES
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
DEVICE PHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS

LASERS, OPTICS, AND OPTOELECTRONICS

Optical measurement of interaction potentials between a single microparticle and an evanescent field

Ken-ichiro Wada; Keiji Sasaki; Hiroshi Masuhara

Appl. Phys. Lett. 76, 2815–2817 (2000) https://doi.org/10.1063/1.126482

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High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy

H. M. Ng; T. D. Moustakas; S. N. G. Chu

Appl. Phys. Lett. 76, 2818–2820 (2000) https://doi.org/10.1063/1.126483

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An optically controllable terahertz filter

I. H. Libon; S. Baumgärtner; M. Hempel; N. E. Hecker; J. Feldmann; M. Koch; P. Dawson

Appl. Phys. Lett. 76, 2821–2823 (2000) https://doi.org/10.1063/1.126484

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GaNAs avalanche photodiode operating at 0.94 μm

G. S. Kinsey; D. W. Gotthold; A. L. Holmes, Jr.; B. G. Streetman; J. C. Campbell

Appl. Phys. Lett. 76, 2824–2825 (2000) https://doi.org/10.1063/1.126485

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Frequency-selective incoherent detection of terahertz radiation by high- $T_{c}$ Josephson junctions

Y. Y. Divin; U. Poppe; O. Y. Volkov; V. V. Pavlovskii

Appl. Phys. Lett. 76, 2826–2828 (2000) https://doi.org/10.1063/1.126486

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Two-color generation in a rare-earth-doped quasiphase-matched structure

A. V. Kir’yanov; I. V. Mel’nikov; K. Wagner

Appl. Phys. Lett. 76, 2829–2831 (2000) https://doi.org/10.1063/1.126487

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The origin of optical gain in cubic InGaN grown by molecular beam epitaxy

J.-Chr. Holst; A. Hoffmann; D. Rudloff; F. Bertram; T. Riemann; J. Christen; T. Frey; D. J. As; D. Schikora; K. Lischka

Appl. Phys. Lett. 76, 2832–2834 (2000) https://doi.org/10.1063/1.126488

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Performance and spectral response of ${Pb}_{1−x} {Sn}_{x} Te(In)$ far-infrared photodetectors

D. R. Khokhlov; I. I. Ivanchik; S. N. Raines; D. M. Watson; J. L. Pipher

Appl. Phys. Lett. 76, 2835–2837 (2000) https://doi.org/10.1063/1.126489

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Deep levels in high-energy proton-irradiated tin-doped n-type Czochralski silicon

E. Simoen; C. Claeys; V. B. Neimash; A. Kraitchinskii; N. Krasko; O. Puzenko; A. Blondeel; P. Clauws

Appl. Phys. Lett. 76, 2838–2840 (2000) https://doi.org/10.1063/1.126490

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Reflection-type $2×2$ optical waveguide switch using the Goos–Hänchen shift effect

Tomomi Sakata; Hiroyoshi Togo; Fusao Shimokawa

Appl. Phys. Lett. 76, 2841–2843 (2000) https://doi.org/10.1063/1.126491

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PLASMAS AND ELECTRICAL DISCHARGES

Self-trapping of negative ions due to electron detachment in the afterglow of electronegative gas plasmas

I. D. Kaganovich; B. N. Ramamurthi; Demetre J. Economou

Appl. Phys. Lett. 76, 2844–2846 (2000) https://doi.org/10.1063/1.126492

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Ion beam synthesis of graphite and diamond in silicon carbide

V. Heera; W. Skorupa; B. Pécz; L. Dobos

Appl. Phys. Lett. 76, 2847–2849 (2000) https://doi.org/10.1063/1.126493

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Auger recombination as a probe of the Mott transition in semiconductor nanocrystals

P. Němec; P. Malý; M. Nikl; K. Nitsch

Appl. Phys. Lett. 76, 2850–2852 (2000) https://doi.org/10.1063/1.126494

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$Si(011) 16×2$ gas-source molecular beam epitaxy: Growth kinetics

N. Taylor; H. Kim; P. Desjardins; Y. L. Foo; J. E. Greene

Appl. Phys. Lett. 76, 2853–2855 (2000) https://doi.org/10.1063/1.126495

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Electrically induced changes in polymer dispersed liquid crystals

D. Cupelli; M. Macchione; F. P. Nicoletta; G. De Filpo; G. Chidichimo

Appl. Phys. Lett. 76, 2856–2858 (2000) https://doi.org/10.1063/1.126496

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Near-band-gap optical functions spectra and band-gap energies of GaNAs/GaAs superlattice heterostructures measured by spectroscopic ellipsometry

J. Šik; M. Schubert; G. Leibiger; V. Gottschalch; G. Kirpal; J. Humlı́ček

Appl. Phys. Lett. 76, 2859–2861 (2000) https://doi.org/10.1063/1.126497

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Interband luminescence and absorption of GaNAs/GaAs single-quantum-well structures

B. Q. Sun; D. S. Jiang; X. D. Luo; Z. Y. Xu; Z. Pan; L. H. Li; R. H. Wu

Appl. Phys. Lett. 76, 2862–2864 (2000) https://doi.org/10.1063/1.126498

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Local structure and bonding of Er in GaN: A contrast with Er in Si

P. H. Citrin; P. A. Northrup; R. Birkhahn; A. J. Steckl

Appl. Phys. Lett. 76, 2865–2867 (2000) https://doi.org/10.1063/1.126499

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Load transfer and deformation mechanisms in carbon nanotube-polystyrene composites

In Special Collection: APL Classic Papers

D. Qian; E. C. Dickey; R. Andrews; T. Rantell

Appl. Phys. Lett. 76, 2868–2870 (2000) https://doi.org/10.1063/1.126500

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Enhanced damage due to light in low-damage reactive-ion etching processes

L. G. Deng; M. Rahman; C. D. W. Wilkinson

Appl. Phys. Lett. 76, 2871–2873 (2000) https://doi.org/10.1063/1.126501

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Reversible phase transition between amorphous and crystalline in ${Zr}_{41.2} {Ti}_{13.8} {Cu}_{12.5} {Ni}_{10} {Be}_{22.5}$ under high pressure at room temperature

Liling Sun; W. K. Wang; D. W. He; W. H. Wang; Q. Wu; X. Y. Zhang; Z. X. Bao; Q. Zhao

Appl. Phys. Lett. 76, 2874–2876 (2000) https://doi.org/10.1063/1.126502

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Hydrogen storage in single-walled carbon nanotubes

Seung Mi Lee; Young Hee Lee

Appl. Phys. Lett. 76, 2877–2879 (2000) https://doi.org/10.1063/1.126503

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X-ray photoelectron spectroscopy characterization of AlGaN surfaces exposed to air and treated in ${NH}_{4} OH$ solution

Tamotsu Hashizume; Shin-ya Ootomo; Ryuusuke Nakasaki; Susumu Oyama; Michio Kihara

Appl. Phys. Lett. 76, 2880–2882 (2000) https://doi.org/10.1063/1.126504

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Single-wall carbon nanotubes as molecular pressure sensors

Jonathan R. Wood; H. Daniel Wagner

Appl. Phys. Lett. 76, 2883–2885 (2000) https://doi.org/10.1063/1.126505

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Local transport and trapping issues in ${Al}_{2} O_{3}$ gate oxide structures

R. Ludeke; M. T. Cuberes; E. Cartier

Appl. Phys. Lett. 76, 2886–2888 (2000) https://doi.org/10.1063/1.126506

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Observation of electronic Raman scattering from Mg-doped wurtzite GaN

K. T. Tsen; C. Koch; Y. Chen; H. Morkoc; J. Li; J. Y. Lin; H. X. Jiang

Appl. Phys. Lett. 76, 2889–2891 (2000) https://doi.org/10.1063/1.126507

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Evidence for a self-organized growth in granular ${Co/Al}_{2} O_{3}$ multilayers

D. Babonneau; F. Petroff; J.-L. Maurice; F. Fettar; A. Vaurès; A. Naudon

Appl. Phys. Lett. 76, 2892–2894 (2000) https://doi.org/10.1063/1.126508

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An optimal quasisuperlattice design to further improve thermal stability of tantalum nitride diffusion barriers

G. S. Chen; S. C. Huang; S. T. Chen; T. J. Yang; P. Y. Lee; J. H. Jou; T. C. Lin

Appl. Phys. Lett. 76, 2895–2897 (2000) https://doi.org/10.1063/1.126509

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Metallization scheme for highly low-resistance, transparent, and thermally stable Ohmic contacts to p-GaN

Ja-Soon Jang; Seong-Ju Park; Tae-Yeon Seong

Appl. Phys. Lett. 76, 2898–2900 (2000) https://doi.org/10.1063/1.126510

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Highly monodisperse polymer-capped ZnO nanoparticles: Preparation and optical properties

Lin Guo; Shihe Yang; Chunlei Yang; Ping Yu; Jiannong Wang; Weikun Ge; George K. L. Wong

Appl. Phys. Lett. 76, 2901–2903 (2000) https://doi.org/10.1063/1.126511

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Effect of the Coulomb interaction on the response time and impedance of the resonant-tunneling diodes

Michael N. Feiginov

Appl. Phys. Lett. 76, 2904–2906 (2000) https://doi.org/10.1063/1.126512

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Investigation of the cleaved surface of a $p–i–n$ laser using Kelvin probe force microscopy and two-dimensional physical simulations

F. Robin; H. Jacobs; O. Homan; A. Stemmer; W. Bächtold

Appl. Phys. Lett. 76, 2907–2909 (2000) https://doi.org/10.1063/1.126513

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Large and stable field-emission current from heavily Si-doped AlN grown by metalorganic vapor phase epitaxy

Makoto Kasu; Naoki Kobayashi

Appl. Phys. Lett. 76, 2910–2912 (2000) https://doi.org/10.1063/1.126514

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Magnetic-field effects on undriven chaos in a weakly coupled GaAs/AlAs superlattice

K. J. Luo; K.-J. Friedland; H. T. Grahn; K. H. Ploog

Appl. Phys. Lett. 76, 2913–2915 (2000) https://doi.org/10.1063/1.126515

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Characterization of electron trap states due to InAs quantum dots in GaAs

C. Walther; J. Bollmann; H. Kissel; H. Kirmse; W. Neumann; W. T. Masselink

Appl. Phys. Lett. 76, 2916–2918 (2000) https://doi.org/10.1063/1.126516

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Critical size for localization of the L-like conduction states in InAs quantum dots grown on GaAs

J. A. Prieto; G. Armelles; J. M. Garcı́a; L. González; A. San Paulo; R. Garcı́a

Appl. Phys. Lett. 76, 2919–2921 (2000) https://doi.org/10.1063/1.126855

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Conductance quantization in nanoscale vertical structure silicon field-effect transistors with a wrap gate

K. Nishiguchi; S. Oda

Appl. Phys. Lett. 76, 2922–2924 (2000) https://doi.org/10.1063/1.126517

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MAGNETISM AND SUPERCONDUCTIVITY

Evidence for valence fluctuation of Fe in ${Sr}_{2} {FeMoO}_{6−w}$ double perovskite

J. Lindén; T. Yamamoto; M. Karppinen; H. Yamauchi; T. Pietari

Appl. Phys. Lett. 76, 2925–2927 (2000) https://doi.org/10.1063/1.126518

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Magnetic moment of Mn in the ferromagnetic semiconductor ${(Ga}_{0.98} {Mn}_{0.02})As$

H. Ohldag; V. Solinus; F. U. Hillebrecht; J. B. Goedkoop; M. Finazzi; F. Matsukura; H. Ohno

Appl. Phys. Lett. 76, 2928–2930 (2000) https://doi.org/10.1063/1.126519

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Magnetic domain and domain-wall imaging of submicron Co dots by probing the magnetostrictive response using atomic force microscopy

J. Wittborn; K. V. Rao; J. Nogués; Ivan K. Schuller

Appl. Phys. Lett. 76, 2931–2933 (2000) https://doi.org/10.1063/1.126520

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DIELECTRICS AND FERROELECTRICITY

Dielectric properties of layered perovskite ${Sr}_{1−x} A_{x} {Bi}_{2} {Nb}_{2} O_{9}$ ferroelectrics $(A=La, Ca$ and $x=0,0.1)$

M. J. Forbess; S. Seraji; Y. Wu; C. P. Nguyen; G. Z. Cao

Appl. Phys. Lett. 76, 2934–2936 (2000) https://doi.org/10.1063/1.126521

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Epitaxial growth of non-c-oriented ${SrBi}_{2} {Nb}_{2} O_{9}$ on (111) ${SrTiO}_{3}$

J. Lettieri; M. A. Zurbuchen; Y. Jia; D. G. Schlom; S. K. Streiffer; M. E. Hawley

Appl. Phys. Lett. 76, 2937–2939 (2000) https://doi.org/10.1063/1.126522

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Controlling the concentration and position of nitrogen in ultrathin oxynitride films formed by using oxygen and nitrogen radicals

K. Watanabe; T. Tatsumi

Appl. Phys. Lett. 76, 2940–2942 (2000) https://doi.org/10.1063/1.126523

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DEVICE PHYSICS

Direct-current characteristics of pnp AlGaN/GaN heterojunction bipolar transistors

A. P. Zhang; G. T. Dang; F. Ren; J. Han; A. G. Baca; R. J. Shul; H. Cho; C. Monier; X. A. Cao; C. R. Abernathy; S. J. Pearton

Appl. Phys. Lett. 76, 2943–2945 (2000) https://doi.org/10.1063/1.126524

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Highly polarized blue electroluminescence from homogeneously aligned films of poly(9,9-dioctylfluorene)

K. S. Whitehead; M. Grell; D. D. C. Bradley; M. Jandke; P. Strohriegl

Appl. Phys. Lett. 76, 2946–2948 (2000) https://doi.org/10.1063/1.126525

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INTERDISCIPLINARY AND GENERAL PHYSICS

The effect of chlorine on dopant activation in hydrogenated amorphous silicon

Adam M. Payne; Sigurd Wagner

Appl. Phys. Lett. 76, 2949–2951 (2000) https://doi.org/10.1063/1.126526

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Probing deep interaction potentials with white-noise-driven atomic force microscope cantilevers

D. O. Koralek; W. F. Heinz; M. D. Antonik; A. Baik; J. H. Hoh

Appl. Phys. Lett. 76, 2952–2954 (2000) https://doi.org/10.1063/1.126527

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Theory of electrostatic probe microscopy: A simple perturbative approach

S. Gómez-Moñivas; J. J. Sáenz; R. Carminati; J. J. Greffet

Appl. Phys. Lett. 76, 2955–2957 (2000) https://doi.org/10.1063/1.126528

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Enhanced ballistic phonon production for surface events in cryogenic silicon detector

R. M. Clarke; P. L. Brink; B. Cabrera; P. Colling; M. B. Crisler; A. K. Davies; S. Eichblatt; R. J. Gaitskell; J. Hellmig; J. M. Martinis; S. W. Nam; T. Saab; B. A. Young

Appl. Phys. Lett. 76, 2958–2960 (2000) https://doi.org/10.1063/1.126529

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Field emission study of diamond-like carbon films with scanned-probe field-emission force microscopy

Takahito Inoue; D. Frank Ogletree; Miquel Salmeron

Appl. Phys. Lett. 76, 2961–2963 (2000) https://doi.org/10.1063/1.126530

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