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Volume 76, Issue 19

8 May 2000

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
DEVICE PHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS
ERRATA

LASERS, OPTICS, AND OPTOELECTRONICS

High-frequency electrical pulse generation using optical rectification in bulk GaAs

S. Graf; H. Sigg; W. Bächtold

Appl. Phys. Lett. 76, 2647–2649 (2000) https://doi.org/10.1063/1.126432

View articletitled, High-frequency electrical pulse generation using optical rectification in bulk GaAs

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Efficient photon harvesting at high optical intensities in ultrathin organic double-heterostructure photovoltaic diodes

P. Peumans; V. Bulović; S. R. Forrest

Appl. Phys. Lett. 76, 2650–2652 (2000) https://doi.org/10.1063/1.126433

View articletitled, Efficient photon harvesting at high optical intensities in ultrathin organic double-heterostructure photovoltaic diodes

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Effect of band gap renormalization on threshold current and efficiency of a distributed Bragg reflector laser

H. Wenzel; A. Klehr; G. Erbert; J. Sebastian; G. Tränkle; M. F. Pereira, Jr.

Appl. Phys. Lett. 76, 2653–2655 (2000) https://doi.org/10.1063/1.126434

View articletitled, Effect of band gap renormalization on threshold current and efficiency of a distributed Bragg reflector laser

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Three-dimensional microfabrication by use of single-photon-absorbed polymerization

Shoji Maruo; Koji Ikuta

Appl. Phys. Lett. 76, 2656–2658 (2000) https://doi.org/10.1063/1.126742

View articletitled, Three-dimensional microfabrication by use of single-photon-absorbed polymerization

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Temperature dependence of intrinsic recombination coefficients in 1.3 μm InAsP/InP quantum-well semiconductor lasers

J. M. Pikal; C. S. Menoni; P. Thiagarajan; G. Y. Robinson; H. Temkin

Appl. Phys. Lett. 76, 2659–2661 (2000) https://doi.org/10.1063/1.126435

View articletitled, Temperature dependence of intrinsic recombination coefficients in 1.3 μm InAsP/InP quantum-well semiconductor lasers

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Temporal evolution of resonant Raman-scattering in ZnCdSe quantum dots

A. Kaschner; M. Strassburg; A. Hoffmann; C. Thomsen; M. Bartels; K. Lischka; D. Schikora

Appl. Phys. Lett. 76, 2662–2664 (2000) https://doi.org/10.1063/1.126436

View articletitled, Temporal evolution of resonant Raman-scattering in ZnCdSe quantum dots

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On the strong influence of the photoelastic effect in the collinear mirage deflection

A. Salazar; M. Gateshki; A. Sánchez-Lavega

Appl. Phys. Lett. 76, 2665–2667 (2000) https://doi.org/10.1063/1.126437

View articletitled, On the strong influence of the photoelastic effect in the collinear mirage deflection

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Photofabrication of three-dimensional photonic crystals by multibeam laser interference into a photopolymerizable resin

Satoru Shoji; Satoshi Kawata

Appl. Phys. Lett. 76, 2668–2670 (2000) https://doi.org/10.1063/1.126438

View articletitled, Photofabrication of three-dimensional photonic crystals by multibeam laser interference into a photopolymerizable resin

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Measurement of the linear electro-optic coefficients of sol-gel derived strontium barium niobate thin films using a two-beam polarization interferometer

Junmo Koo; Changho Lee; Jae Hyeok Jang; Kwangsoo No; Byeong-Soo Bae

Appl. Phys. Lett. 76, 2671–2673 (2000) https://doi.org/10.1063/1.126439

View articletitled, Measurement of the linear electro-optic coefficients of sol-gel derived strontium barium niobate thin films using a two-beam polarization interferometer

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Interface structures in GaAs wafer bonding: Application to compliant substrates

R. R. Vanfleet; M. Shverdin; J. Silcox; Z. H. Zhu; Y. H. Lo

Appl. Phys. Lett. 76, 2674–2676 (2000) https://doi.org/10.1063/1.126440

View articletitled, Interface structures in GaAs wafer bonding: Application to compliant substrates

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Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate

N. D. Zakharov; P. Werner; U. Gösele; R. Heitz; D. Bimberg; N. N. Ledentsov; V. M. Ustinov; B. V. Volovik; Zh. I. Alferov; N. K. Polyakov; V. N. Petrov; V. A. Egorov; G. E. Cirlin

Appl. Phys. Lett. 76, 2677–2679 (2000) https://doi.org/10.1063/1.126441

View articletitled, Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate

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High-quality strain-relaxed SiGe alloy grown on implanted silicon–on–insulator substrate

F. Y. Huang; M. A. Chu; M. O. Tanner; K. L. Wang; G. D. U’Ren; M. S. Goorsky

Appl. Phys. Lett. 76, 2680–2682 (2000) https://doi.org/10.1063/1.126442

View articletitled, High-quality strain-relaxed SiGe alloy grown on implanted silicon–on–insulator substrate

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Dependence of radiative lifetimes of porous silicon on excitation wavelength and intensity

Patrick J. Moyer; Andy Pridmore; Timothy Martin; Jan Schmidt; Tom Hasche; Lukas Eng; James L. Gole

Appl. Phys. Lett. 76, 2683–2685 (2000) https://doi.org/10.1063/1.126443

View articletitled, Dependence of radiative lifetimes of porous silicon on excitation wavelength and intensity

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Nanopatterning of copper (111) vicinal surfaces by oxygen-induced mesoscopic faceting

S. Vollmer; A. Birkner; S. Lukas; G. Witte; Ch. Wöll

Appl. Phys. Lett. 76, 2686–2688 (2000) https://doi.org/10.1063/1.126444

View articletitled, Nanopatterning of copper (111) vicinal surfaces by oxygen-induced mesoscopic faceting

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Mechanism for the anomalous degradation of silicon space solar cells

S. Zh. Karazhanov

Appl. Phys. Lett. 76, 2689–2691 (2000) https://doi.org/10.1063/1.126445

View articletitled, Mechanism for the anomalous degradation of silicon space solar cells

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Formation of carbon nitride with ${sp}^{3}$ -bonded carbon in ${CN}_{x} / ZrN$ superlattice coatings

M. L. Wu; M. U. Guruz; V. P. Dravid; Y. W. Chung; S. Anders; F. L. Freire, Jr.; G. Mariotto

Appl. Phys. Lett. 76, 2692–2694 (2000) https://doi.org/10.1063/1.126743

View articletitled, Formation of carbon nitride with <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi>sp</mi><mrow><mn>3</mn></mrow></msup></math></span>-bonded carbon in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CN</mi><mrow><mi>x</mi></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">ZrN</mi></math></span> superlattice coatings

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Quantization energy mapping of single V-groove GaAs quantum wires by femtosecond near-field optics

M. Achermann; B. A. Nechay; U. Siegner; A. Hartmann; D. Oberli; E. Kapon; U. Keller

Appl. Phys. Lett. 76, 2695–2697 (2000) https://doi.org/10.1063/1.126446

View articletitled, Quantization energy mapping of single V-groove GaAs quantum wires by femtosecond near-field optics

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Diffuse x-ray rods and scattering from point defect clusters in ion implanted silicon

U. Beck; T. H. Metzger; J. Peisl; J. R. Patel

Appl. Phys. Lett. 76, 2698–2700 (2000) https://doi.org/10.1063/1.126447

View articletitled, Diffuse x-ray rods and scattering from point defect clusters in ion implanted silicon

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Defect structure in selective area growth GaN pyramid on (111)Si substrate

Shigeyasu Tanaka; Yasutoshi Kawaguchi; Nobuhiko Sawaki; Michio Hibino; Kazumasa Hiramatsu

Appl. Phys. Lett. 76, 2701–2703 (2000) https://doi.org/10.1063/1.126448

View articletitled, Defect structure in selective area growth GaN pyramid on (111)Si substrate

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Modification of the hole injection barrier in organic light-emitting devices studied by ultraviolet photoelectron spectroscopy

X. M. Ding; L. M. Hung; L. F. Cheng; Z. B. Deng; X. Y. Hou; C. S. Lee; S. T. Lee

Appl. Phys. Lett. 76, 2704–2706 (2000) https://doi.org/10.1063/1.126449

View articletitled, Modification of the hole injection barrier in organic light-emitting devices studied by ultraviolet photoelectron spectroscopy

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Near-surface InAs/GaAs quantum dots with sharp electronic shells

S. Fafard

Appl. Phys. Lett. 76, 2707–2709 (2000) https://doi.org/10.1063/1.126450

View articletitled, Near-surface InAs/GaAs quantum dots with sharp electronic shells

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Predictive model for scanned probe oxidation kinetics

J. A. Dagata; F. Perez-Murano; G. Abadal; K. Morimoto; T. Inoue; J. Itoh; H. Yokoyama

Appl. Phys. Lett. 76, 2710–2712 (2000) https://doi.org/10.1063/1.126451

View articletitled, Predictive model for scanned probe oxidation kinetics

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Analysis of x-ray reflectivity data from low-contrast polymer bilayer systems using a Fourier method

O. H. Seeck; I. D. Kaendler; M. Tolan; K. Shin; M. H. Rafailovich; J. Sokolov; R. Kolb

Appl. Phys. Lett. 76, 2713–2715 (2000) https://doi.org/10.1063/1.126452

View articletitled, Analysis of x-ray reflectivity data from low-contrast polymer bilayer systems using a Fourier method

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Bi surfactant effects on ordering in GaInP grown by organometallic vapor-phase epitaxy

S. W. Jun; C. M. Fetzer; R. T. Lee; J. K. Shurtleff; G. B. Stringfellow

Appl. Phys. Lett. 76, 2716–2718 (2000) https://doi.org/10.1063/1.126453

View articletitled, Bi surfactant effects on ordering in GaInP grown by organometallic vapor-phase epitaxy

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Plasma patterning of carbon nanotubes

Qidao Chen; Liming Dai

Appl. Phys. Lett. 76, 2719–2721 (2000) https://doi.org/10.1063/1.126454

View articletitled, Plasma patterning of carbon nanotubes

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Temperature dependence of the band gap in ${InAs}_{y} P_{1−y}$

M. Wada; S. Araki; T. Kudou; T. Umezawa; S. Nakajima; T. Ueda

Appl. Phys. Lett. 76, 2722–2724 (2000) https://doi.org/10.1063/1.126455

View articletitled, Temperature dependence of the band gap in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">InAs</mi><mrow><mi>y</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">P</mi><mrow><mtext>1−y</mtext></mrow></msub></math></span>

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes

Q. Wahab; A. Ellison; A. Henry; E. Janzén; C. Hallin; J. Di Persio; R. Martinez

Appl. Phys. Lett. 76, 2725–2727 (2000) https://doi.org/10.1063/1.126456

View articletitled, Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes

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Low-resistance ohmic contacts to p-type GaN

Y.-L. Li; E. F. Schubert; J. W. Graff; A. Osinsky; W. F. Schaff

Appl. Phys. Lett. 76, 2728–2730 (2000) https://doi.org/10.1063/1.126457

View articletitled, Low-resistance ohmic contacts to <em>p</em>-type GaN

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Fabricating conductive microstructures by direct electron-beam writing on hydrogenated $n$ -type Si-doped GaAs

S. Silvestre; E. Constant; D. Bernard-Loridant; B. Sieber

Appl. Phys. Lett. 76, 2731–2733 (2000) https://doi.org/10.1063/1.126458

View articletitled, Fabricating conductive microstructures by direct electron-beam writing on hydrogenated <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n</mi></math></span>-type Si-doped GaAs

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Temperature dependence of the iron donor level in silicon at device processing temperatures

H. Kohno; H. Hieslmair; A. A. Istratov; E. R. Weber

Appl. Phys. Lett. 76, 2734–2736 (2000) https://doi.org/10.1063/1.126459

View articletitled, Temperature dependence of the iron donor level in silicon at device processing temperatures

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Magnetotransport studies of AlGaN/GaN heterostructures grown on sapphire substrates: Effective mass and scattering time

T. Wang; J. Bai; S. Sakai; Y. Ohno; H. Ohno

Appl. Phys. Lett. 76, 2737–2739 (2000) https://doi.org/10.1063/1.126460

View articletitled, Magnetotransport studies of AlGaN/GaN heterostructures grown on sapphire substrates: Effective mass and scattering time

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Highly electrically conductive indium–tin–oxide thin films epitaxially grown on yttria-stabilized zirconia (100) by pulsed-laser deposition

Hiromichi Ohta; Masahiro Orita; Masahiro Hirano; Hiroaki Tanji; Hiroshi Kawazoe; Hideo Hosono

Appl. Phys. Lett. 76, 2740–2742 (2000) https://doi.org/10.1063/1.126461

View articletitled, Highly electrically conductive indium–tin–oxide thin films epitaxially grown on yttria-stabilized zirconia (100) by pulsed-laser deposition

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Electronic transport mechanisms of nonalloyed Pt Ohmic contacts to $p -GaN$

Ja-Soon Jang; Tae-Yeon Seong

Appl. Phys. Lett. 76, 2743–2745 (2000) https://doi.org/10.1063/1.126462

View articletitled, Electronic transport mechanisms of nonalloyed Pt Ohmic contacts to <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi><mi mathvariant="normal" xmlns="">-GaN</mi></math></span>

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Influence of strain relaxation of the ${Al}_{x} {Ga}_{1−x} N$ barrier on transport properties of the two-dimensional electron gas in modulation-doped ${Al}_{x} {Ga}_{1−x} N/GaN$ heterostructures

B. Shen; T. Someya; Y. Arakawa

Appl. Phys. Lett. 76, 2746–2748 (2000) https://doi.org/10.1063/1.126463

View articletitled, Influence of strain relaxation of the <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">N</mi></math></span> barrier on transport properties of the two-dimensional electron gas in modulation-doped <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">N/GaN</mi></math></span> heterostructures

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MAGNETISM AND SUPERCONDUCTIVITY

Electric-pulse-induced reversible resistance change effect in magnetoresistive films

S. Q. Liu; N. J. Wu; A. Ignatiev

Appl. Phys. Lett. 76, 2749–2751 (2000) https://doi.org/10.1063/1.126464

View articletitled, Electric-pulse-induced reversible resistance change effect in magnetoresistive films

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Picosecond hot-electron energy relaxation in NbN superconducting photodetectors

K. S. Il’in; M. Lindgren; M. Currie; A. D. Semenov; G. N. Gol’tsman; Roman Sobolewski; S. I. Cherednichenko; E. M. Gershenzon

Appl. Phys. Lett. 76, 2752–2754 (2000) https://doi.org/10.1063/1.126480

View articletitled, Picosecond hot-electron energy relaxation in NbN superconducting photodetectors

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Gap symmetry and critical current of ${YBa}_{2} {Cu}_{3} O_{7}$ step-edge Josephson junctions

Soon-Gul Lee; Yunseok Hwang

Appl. Phys. Lett. 76, 2755–2757 (2000) https://doi.org/10.1063/1.126465

View articletitled, Gap symmetry and critical current of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">YBa</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">7</mi></mrow></msub></math></span> step-edge Josephson junctions

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Suppression of magnetic-field pulse-induced magnetization precession by pulse tailoring

M. Bauer; R. Lopusnik; J. Fassbender; B. Hillebrands

Appl. Phys. Lett. 76, 2758–2760 (2000) https://doi.org/10.1063/1.126466

View articletitled, Suppression of magnetic-field pulse-induced magnetization precession by pulse tailoring

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Large zinc cation occupancy of octahedral sites in mechanically activated zinc ferrite powders

S. A. Oliver; V. G. Harris; H. H. Hamdeh; J. C. Ho

Appl. Phys. Lett. 76, 2761–2763 (2000) https://doi.org/10.1063/1.126467

View articletitled, Large zinc cation occupancy of octahedral sites in mechanically activated zinc ferrite powders

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DIELECTRICS AND FERROELECTRICITY

Ferroelectricity in a pure ${BiFeO}_{3}$ ceramic

M. Mahesh Kumar; V. R. Palkar; K. Srinivas; S. V. Suryanarayana

Appl. Phys. Lett. 76, 2764–2766 (2000) https://doi.org/10.1063/1.126468

View articletitled, Ferroelectricity in a pure <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BiFeO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span> ceramic

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Microscopic model of ferroelectricity in stress-free ${PbTiO}_{3}$ ultrathin films

Ph. Ghosez; K. M. Rabe

Appl. Phys. Lett. 76, 2767–2769 (2000) https://doi.org/10.1063/1.126469

View articletitled, Microscopic model of ferroelectricity in stress-free <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">PbTiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span> ultrathin films

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Neutron intrinsic gettering on electrical property of gate oxynitride in metal-oxide-Si capacitor

Kuei-Shu Chang-Liao; Nan-Kuang Yi; Jenn-Gwo Huang

Appl. Phys. Lett. 76, 2770–2772 (2000) https://doi.org/10.1063/1.126470

View articletitled, Neutron intrinsic gettering on electrical property of gate oxynitride in metal-oxide-Si capacitor

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Glassy to inhomogeneous-ferroelectric crossover in ${(Pb, La)(Zr, Ti)O}_{3}$ ceramics

V. Bobnar; Z. Kutnjak; A. Levstik

Appl. Phys. Lett. 76, 2773–2775 (2000) https://doi.org/10.1063/1.126471

View articletitled, Glassy to inhomogeneous-ferroelectric crossover in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">(Pb, La)(Zr, Ti)O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span> ceramics

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Pyroelectric or piezoelectric compensated ferroelectric composites

Beatrix Ploss; Bernd Ploss; F. G. Shin; H. L. W. Chan; C. L. Choy

Appl. Phys. Lett. 76, 2776–2778 (2000) https://doi.org/10.1063/1.126472

View articletitled, Pyroelectric or piezoelectric compensated ferroelectric composites

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Dielectric enhancement and ferroelectric anomaly of compositionally graded ${(Pb, Ca)TiO}_{3}$ thin films derived by a modified sol–gel technique

Dinghua Bao; Xi Yao; Liangying Zhang

Appl. Phys. Lett. 76, 2779–2781 (2000) https://doi.org/10.1063/1.126473

View articletitled, Dielectric enhancement and ferroelectric anomaly of compositionally graded <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">(Pb, Ca)TiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span> thin films derived by a modified sol–gel technique

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DEVICE PHYSICS

Trapping of quasiparticles of a nonequilibrium superconductor

J. P. Pekola; D. V. Anghel; T. I. Suppula; J. K. Suoknuuti; A. J. Manninen; M. Manninen

Appl. Phys. Lett. 76, 2782–2784 (2000) https://doi.org/10.1063/1.126474

View articletitled, Trapping of quasiparticles of a nonequilibrium superconductor

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High visible rejection AlGaN photodetectors on Si(111) substrates

J. L. Pau; E. Monroy; F. B. Naranjo; E. Muñoz; F. Calle; M. A. Sánchez-Garcı́a; E. Calleja

Appl. Phys. Lett. 76, 2785–2787 (2000) https://doi.org/10.1063/1.126475

View articletitled, High visible rejection AlGaN photodetectors on Si(111) substrates

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InGaAsN/AlGaAs $P-n-p$ heterojunction bipolar transistor

P. C. Chang; A. G. Baca; N. Y. Li; P. R. Sharps; H. Q. Hou; J. R. Laroche; F. Ren

Appl. Phys. Lett. 76, 2788–2790 (2000) https://doi.org/10.1063/1.126476

View articletitled, InGaAsN/AlGaAs <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">P-n-p</mi></math></span> heterojunction bipolar transistor

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Refractive indices of InGaAsP lattice-matched to GaAs at wavelengths relevant to device design

S. G. Wallace; B. J. Robinson; P. Mascher; H. K. Haugen; D. A. Thompson; D. Dalacu; L. Martinu

Appl. Phys. Lett. 76, 2791–2793 (2000) https://doi.org/10.1063/1.126477

View articletitled, Refractive indices of InGaAsP lattice-matched to GaAs at wavelengths relevant to device design

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INTERDISCIPLINARY AND GENERAL PHYSICS

Surface electronic density of states of tetrahedral amorphous carbon investigated by scanning tunneling spectroscopy and ab initio calculations

K. Jarmo Koivusaari; Tapio T. Rantala; J. Levoska; S. Leppävuori

Appl. Phys. Lett. 76, 2794–2796 (2000) https://doi.org/10.1063/1.126478

View articletitled, Surface electronic density of states of tetrahedral amorphous carbon investigated by scanning tunneling spectroscopy and <em>ab initio</em> calculations

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Precise velocity measurement of surface acoustic waves on a bearing ball

Kazushi Yamanaka; Hideo Cho; Yusuke Tsukahara

Appl. Phys. Lett. 76, 2797–2799 (2000) https://doi.org/10.1063/1.126481

View articletitled, Precise velocity measurement of surface acoustic waves on a bearing ball

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ERRATA

Erratum: “Direct determination of the Andreev reflection probability by means of point contact spectroscopy” [Appl. Phys. Lett. 76, 1152 (2000)]

M. Jakob; H. Stahl; J. Knoch; J. Appenzeller; B. Lengeler; H. Hardtdegen; H. Lüth

Appl. Phys. Lett. 76, 2800 (2000) https://doi.org/10.1063/1.126479

View articletitled, Erratum: “Direct determination of the Andreev reflection probability by means of point contact spectroscopy” [Appl. Phys. Lett. <strong>76</strong>, 1152 (2000)]

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