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Volume 76, Issue 18

1 May 2000

Applied Physics Letters Cover Image for Volume 76, Issue 18

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
PLASMAS AND ELECTRICAL DISCHARGES
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
DEVICE PHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS

LASERS, OPTICS, AND OPTOELECTRONICS

Scanning tunneling microscope light emission spectroscopy with picosecond time resolution

Y. Uehara; A. Yagami; K. J. Ito; S. Ushioda

Appl. Phys. Lett. 76, 2487–2489 (2000) https://doi.org/10.1063/1.126384

View articletitled, Scanning tunneling microscope light emission spectroscopy with picosecond time resolution

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Growth of Nd:potassium gadolinium tungstate thin-film waveguides by pulsed laser deposition

P. A. Atanasov; R. I. Tomov; J. Perriére; R. W. Eason; N. Vainos; A. Klini; A. Zherikhin; E. Millon

Appl. Phys. Lett. 76, 2490–2492 (2000) https://doi.org/10.1063/1.126385

View articletitled, Growth of Nd:potassium gadolinium tungstate thin-film waveguides by pulsed laser deposition

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Operating lifetime of phosphorescent organic light emitting devices

P. E. Burrows; S. R. Forrest; T. X. Zhou; L. Michalski

Appl. Phys. Lett. 76, 2493–2495 (2000) https://doi.org/10.1063/1.126386

View articletitled, Operating lifetime of phosphorescent organic light emitting devices

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Depletion region in thermally poled fused silica

A. L. C. Triques; C. M. B. Cordeiro; V. Balestrieri; B. Lesche; W. Margulis; I. C. S. Carvalho

Appl. Phys. Lett. 76, 2496–2498 (2000) https://doi.org/10.1063/1.126387

View articletitled, Depletion region in thermally poled fused silica

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InAs(PSb)-based “W” quantum well laser diodes emitting near 3.3 μm

A. Joullié; E. M. Skouri; M. Garcia; P. Grech; A. Wilk; P. Christol; A. N. Baranov; A. Behres; J. Kluth; A. Stein; K. Heime; M. Heuken; S. Rushworth; E. Hulicius; T. Simecek

Appl. Phys. Lett. 76, 2499–2501 (2000) https://doi.org/10.1063/1.126388

View articletitled, InAs(PSb)-based “W” quantum well laser diodes emitting near 3.3 μm

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Highly efficient pure blue electroluminescence from polyfluorene: Influence of the molecular weight distribution on the aggregation tendency

Karl-Heinz Weinfurtner; Hisayoshi Fujikawa; Shizuo Tokito; Yasunori Taga

Appl. Phys. Lett. 76, 2502–2504 (2000) https://doi.org/10.1063/1.126389

View articletitled, Highly efficient pure blue electroluminescence from polyfluorene: Influence of the molecular weight distribution on the aggregation tendency

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Generation of narrow-band terahertz radiation via optical rectification of femtosecond pulses in periodically poled lithium niobate

Y.-S. Lee; T. Meade; V. Perlin; H. Winful; T. B. Norris; A. Galvanauskas

Appl. Phys. Lett. 76, 2505–2507 (2000) https://doi.org/10.1063/1.126390

View articletitled, Generation of narrow-band terahertz radiation via optical rectification of femtosecond pulses in periodically poled lithium niobate

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PLASMAS AND ELECTRICAL DISCHARGES

Self-sustained secondary discharge in inductively coupled plasma reactor

Joachim Walewski; Jussi Larjo; Rolf Hernberg

Appl. Phys. Lett. 76, 2508–2510 (2000) https://doi.org/10.1063/1.126391

View articletitled, Self-sustained secondary discharge in inductively coupled plasma reactor

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Plasma fluidized bed imaging and possible strong coupling effects

Hans R. Snyder; Robert P. Currier; Michael S. Murillo

Appl. Phys. Lett. 76, 2511–2513 (2000) https://doi.org/10.1063/1.126392

View articletitled, Plasma fluidized bed imaging and possible strong coupling effects

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Collective resonance and form factor of homogeneous broadening in semiconductors

S. V. Zaitsev; N. Yu. Gordeev; L. Ya. Karachinsky; V. I. Kopchatov; I. I. Novikov; I. S. Tarasov; N. A. Pikhtin; V. M. Ustinov; P. S. Kop’ev

Appl. Phys. Lett. 76, 2514–2516 (2000) https://doi.org/10.1063/1.126393

View articletitled, Collective resonance and form factor of homogeneous broadening in semiconductors

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Infrared spectroscopy of ${ZnSiN}_{2}$ single-crystalline films on r-sapphire

Alexander Mintairov; James Merz; Andrei Osinsky; Vladimir Fuflyigin; L. D. Zhu

Appl. Phys. Lett. 76, 2517–2519 (2000) https://doi.org/10.1063/1.126394

View articletitled, Infrared spectroscopy of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">ZnSiN</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math></span> single-crystalline films on <em>r</em>-sapphire

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Surface relief gratings generated by a photocrosslinkable polymer with styrylpyridine side chains

Shigeru Yamaki; Masaru Nakagawa; Shin’ya Morino; Kunihiro Ichimura

Appl. Phys. Lett. 76, 2520–2522 (2000) https://doi.org/10.1063/1.126395

View articletitled, Surface relief gratings generated by a photocrosslinkable polymer with styrylpyridine side chains

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Porous silicon microcavities as optical chemical sensors

V. Mulloni; L. Pavesi

Appl. Phys. Lett. 76, 2523–2525 (2000) https://doi.org/10.1063/1.126396

View articletitled, Porous silicon microcavities as optical chemical sensors

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Extended x-ray absorption fine-structure measurement of bond-length strain in epitaxial ${Gd}_{2} O_{3}$ on GaAs(001)

E. J. Nelson; J. C. Woicik; M. Hong; J. Kwo; J. P. Mannaerts

Appl. Phys. Lett. 76, 2526–2528 (2000) https://doi.org/10.1063/1.126397

View articletitled, Extended x-ray absorption fine-structure measurement of bond-length strain in epitaxial <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Gd</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span> on GaAs(001)

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On the crystallographic characteristics of ion-beam-synthesized ${Ru}_{2} {Si}_{3}$ precipitates

G. Shao; S. Ledain; Y. L. Chen; J. S. Sharpe; R. M. Gwilliam; K. P. Homewood; K. Reeson Kirkby; M. J. Goringe

Appl. Phys. Lett. 76, 2529–2531 (2000) https://doi.org/10.1063/1.126398

View articletitled, On the crystallographic characteristics of ion-beam-synthesized <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ru</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span> precipitates

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Parallel molecular stacks of organic thin film with electrical bistability

J. C. Li; Z. Q. Xue; X. L. Li; W. M. Liu; S. M. Hou; Y. L. Song; L. Jiang; D. B. Zhu; X. X. Bao; Z. F. Liu

Appl. Phys. Lett. 76, 2532–2534 (2000) https://doi.org/10.1063/1.126399

View articletitled, Parallel molecular stacks of organic thin film with electrical bistability

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Nanometer-scale electrochemical lithography on the spinel oxide ${LiMn}_{2} O_{4}$

Robert Kostecki; Frank McLarnon

Appl. Phys. Lett. 76, 2535–2537 (2000) https://doi.org/10.1063/1.126400

View articletitled, Nanometer-scale electrochemical lithography on the spinel oxide <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LiMn</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math></span>

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In situ barrier formation using rapid thermal annealing of a tungsten nitride/polycrystalline silicon structure

Byung Hak Lee; Kee Sun Lee; Dong Kyun Sohn; Jeong Soo Byun; Chang Hee Han; Ji-Soo Park; Sang Beom Han; Jin Woon Park

Appl. Phys. Lett. 76, 2538–2540 (2000) https://doi.org/10.1063/1.126401

View articletitled, <em>In situ</em> barrier formation using rapid thermal annealing of a tungsten nitride/polycrystalline silicon structure

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Experimental test for elastic compliance during growth on glass-bonded compliant substrates

P. D. Moran; D. M. Hansen; R. J. Matyi; L. J. Mawst; T. F. Kuech

Appl. Phys. Lett. 76, 2541–2543 (2000) https://doi.org/10.1063/1.126402

View articletitled, Experimental test for elastic compliance during growth on glass-bonded compliant substrates

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Improvement of wet-oxidized ${Al}_{x} {Ga}_{1−x} As$ $(x∼1)$ through the use of AlAs/GaAs digital alloys

G. W. Pickrell; J. H. Epple; K. L. Chang; K. C. Hsieh; K. Y. Cheng

Appl. Phys. Lett. 76, 2544–2546 (2000) https://doi.org/10.1063/1.126403

View articletitled, Improvement of wet-oxidized <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math></span> <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(x∼1)</mtext></math></span> through the use of AlAs/GaAs digital alloys

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Origin of the nonradiative $〈112̄0〉$ line defect in lateral epitaxy-grown GaN on SiC substrates

P. Hacke; K. Domen; A. Kuramata; T. Tanahashi; O. Ueda

Appl. Phys. Lett. 76, 2547–2549 (2000) https://doi.org/10.1063/1.126404

View articletitled, Origin of the nonradiative <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">〈112̄0〉</mtext></math></span> line defect in lateral epitaxy-grown GaN on SiC substrates

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Time-resolved photoluminescence spectra of strong visible light-emitting SiC nanocrystalline films on Si deposited by electron-cyclotron-resonance chemical-vapor deposition

S. J. Xu; M. B. Yu; Rusli; S. F. Yoon; C. M. Che

Appl. Phys. Lett. 76, 2550–2552 (2000) https://doi.org/10.1063/1.126382

View articletitled, Time-resolved photoluminescence spectra of strong visible light-emitting SiC nanocrystalline films on Si deposited by electron-cyclotron-resonance chemical-vapor deposition

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Pulsed-laser deposition for organic electroluminescent device applications

S. R. Farrar; A. E. A. Contoret; M. O’Neill; J. E. Nicholls; A. J. Eastwood; S. M. Kelly

Appl. Phys. Lett. 76, 2553–2555 (2000) https://doi.org/10.1063/1.126405

View articletitled, Pulsed-laser deposition for organic electroluminescent device applications

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Ion-beam-induced spinel-to-rocksalt structural phase transformation in ${MgAl}_{2} O_{4}$

Manabu Ishimaru; Ivan V. Afanasyev-Charkin; Kurt E. Sickafus

Appl. Phys. Lett. 76, 2556–2558 (2000) https://doi.org/10.1063/1.126406

View articletitled, Ion-beam-induced spinel-to-rocksalt structural phase transformation in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">MgAl</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math></span>

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Room-temperature minority-carrier injection-enhanced recovery of radiation-induced defects in p-InGaP and solar cells

Aurangzeb Khan; Masafumi Yamaguchi; Jacques C. Bourgoin; N. de Angelis; Tatsuya Takamoto

Appl. Phys. Lett. 76, 2559–2561 (2000) https://doi.org/10.1063/1.126407

View articletitled, Room-temperature minority-carrier injection-enhanced recovery of radiation-induced defects in <em>p</em>-InGaP and solar cells

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MeV ion-induced suppression of resonance current in InP-based resonant tunneling diodes

B. D. Weaver; E. M. Jackson; A. C. Seabaugh; P. van der Wagt

Appl. Phys. Lett. 76, 2562–2564 (2000) https://doi.org/10.1063/1.126408

View articletitled, MeV ion-induced suppression of resonance current in InP-based resonant tunneling diodes

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High-resolution scanning capacitance microscopy of silicon devices by surface beveling

Filippo Giannazzo; Francesco Priolo; Vito Raineri; Vittorio Privitera

Appl. Phys. Lett. 76, 2565–2567 (2000) https://doi.org/10.1063/1.126409

View articletitled, High-resolution scanning capacitance microscopy of silicon devices by surface beveling

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Wave function-dependent mobility and suppression of interface roughness scattering in a strained SiGe p-channel field-effect structure

M. A. Sadeghzadeh; A. I. Horrell; O. A. Mironov; E. H. C. Parker; T. E. Whall; M. J. Kearney

Appl. Phys. Lett. 76, 2568–2570 (2000) https://doi.org/10.1063/1.126410

View articletitled, Wave function-dependent mobility and suppression of interface roughness scattering in a strained SiGe <em>p</em>-channel field-effect structure

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Conduction band offset in InAs/GaAs self-organized quantum dots measured by deep level transient spectroscopy

S. Ghosh; B. Kochman; J. Singh; P. Bhattacharya

Appl. Phys. Lett. 76, 2571–2573 (2000) https://doi.org/10.1063/1.126411

View articletitled, Conduction band offset in InAs/GaAs self-organized quantum dots measured by deep level transient spectroscopy

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High ambipolar carrier mobility in self-organizing terthiophene derivative

Masahiro Funahashi; Jun-ichi Hanna

Appl. Phys. Lett. 76, 2574–2576 (2000) https://doi.org/10.1063/1.126412

View articletitled, High ambipolar carrier mobility in self-organizing terthiophene derivative

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Interference-induced blockage of direct tunneling current in metal–insulator–semiconductor structure

J. M. Mohaidat; Riyad N. Ahmad-Bitar

Appl. Phys. Lett. 76, 2577–2579 (2000) https://doi.org/10.1063/1.126413

View articletitled, Interference-induced blockage of direct tunneling current in metal–insulator–semiconductor structure

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Single-crystal hexagonal and cubic GaN growth directly on vicinal (001) GaAs substrates by molecular-beam epitaxy

K. Amimer; A. Georgakilas; K. Tsagaraki; M. Androulidaki; D. Cengher; L. Toth; B. Pecz; M. Calamiotou

Appl. Phys. Lett. 76, 2580–2582 (2000) https://doi.org/10.1063/1.126414

View articletitled, Single-crystal hexagonal and cubic GaN growth directly on vicinal (001) GaAs substrates by molecular-beam epitaxy

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Field emission from molybdenum carbide

Ambrosio A. Rouse; John B. Bernhard; Edward D. Sosa; David E. Golden

Appl. Phys. Lett. 76, 2583–2585 (2000) https://doi.org/10.1063/1.126415

View articletitled, Field emission from molybdenum carbide

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MAGNETISM AND SUPERCONDUCTIVITY

Ballistic magnetoresistance in transition-metal nanocontacts: The case of iron

N. Garcı́a; M. Muñoz; Y.-W. Zhao

Appl. Phys. Lett. 76, 2586–2587 (2000) https://doi.org/10.1063/1.126416

View articletitled, Ballistic magnetoresistance in transition-metal nanocontacts: The case of iron

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Geometry dependence of magnetization vortices in patterned submicron NiFe elements

Jing Shi; S. Tehrani; M. R. Scheinfein

Appl. Phys. Lett. 76, 2588–2590 (2000) https://doi.org/10.1063/1.126417

View articletitled, Geometry dependence of magnetization vortices in patterned submicron NiFe elements

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Flux flow in ${YBa}_{2} {Cu}_{3} O_{7−δ}$ grain-boundary Josephson junctions with a four-terminal configuration

Filomena Lombardi; U. Scotti di Uccio; Z. Ivanov; T. Claeson; M. Cirillo

Appl. Phys. Lett. 76, 2591–2593 (2000) https://doi.org/10.1063/1.126418

View articletitled, Flux flow in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">YBa</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mtext>7−δ</mtext></mrow></msub></math></span> grain-boundary Josephson junctions with a four-terminal configuration

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Magnetic pinning in superconductor-ferromagnet multilayers

L. N. Bulaevskii; E. M. Chudnovsky; M. P. Maley

Appl. Phys. Lett. 76, 2594–2596 (2000) https://doi.org/10.1063/1.126419

View articletitled, Magnetic pinning in superconductor-ferromagnet multilayers

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Low-temperature scanning laser microscopy of individual filaments extracted from ${(Bi, Pb)}_{2} {Sr}_{2} {Ca}_{2} {Cu}_{3} O_{10+x}$ tapes

A. G. Sivakov; A. V. Lukashenko; D. Abraimov; P. Müller; A. V. Ustinov; M. Leghissa

Appl. Phys. Lett. 76, 2597–2599 (2000) https://doi.org/10.1063/1.126420

View articletitled, Low-temperature scanning laser microscopy of individual filaments extracted from <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">(Bi, Pb)</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mtext>10+x</mtext></mrow></msub></math></span> tapes

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Room-temperature photoinduced magnetoresistance effect in GaAs including MnSb nanomagnets

H. Akinaga; M. Mizuguchi; K. Ono; M. Oshima

Appl. Phys. Lett. 76, 2600–2602 (2000) https://doi.org/10.1063/1.126421

View articletitled, Room-temperature photoinduced magnetoresistance effect in GaAs including MnSb nanomagnets

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Connecting disorder and magnetic properties in CoFe thin films

J. W. Freeland; K. Bussmann; Y. U. Idzerda

Appl. Phys. Lett. 76, 2603–2605 (2000) https://doi.org/10.1063/1.126422

View articletitled, Connecting disorder and magnetic properties in CoFe thin films

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Voltage divider operation using high- $T_{c}$ superconducting interface-engineered Josephson junctions

Kazuo Saitoh; Yoshihisa Soutome; Tokuumi Fukazawa; Yoshinobu Tarutani; Kazumasa Takagi

Appl. Phys. Lett. 76, 2606–2608 (2000) https://doi.org/10.1063/1.126423

View articletitled, Voltage divider operation using high-<span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>T</mi><mrow><mi>c</mi></mrow></msub></math></span> superconducting interface-engineered Josephson junctions

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DIELECTRICS AND FERROELECTRICITY

Impact of face-to-face annealing in preparation of sol-gel-derived ${SrBi}_{2} {Ta}_{2} O_{9}$ thin films

Koji Aizawa; Eisuke Tokumitsu; Kojiro Okamoto; Hiroshi Ishiwara

Appl. Phys. Lett. 76, 2609–2611 (2000) https://doi.org/10.1063/1.126424

View articletitled, Impact of face-to-face annealing in preparation of sol-gel-derived <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrBi</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ta</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">9</mi></mrow></msub></math></span> thin films

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Dielectric and electret properties of nanoemulsion spin-on polytetrafluoroethylene films

Reinhard Schwödiauer; Gerhard S. Neugschwandtner; Simona Bauer-Gogonea; Siegfried Bauer; Tom Rosenmayer

Appl. Phys. Lett. 76, 2612–2614 (2000) https://doi.org/10.1063/1.126425

View articletitled, Dielectric and electret properties of nanoemulsion spin-on polytetrafluoroethylene films

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DEVICE PHYSICS

A microcantilever-based alcohol vapor sensor-application and response model

Henriette Jensenius; Jacob Thaysen; Anette A. Rasmussen; Lars H. Veje; Ole Hansen; Anja Boisen

Appl. Phys. Lett. 76, 2615–2617 (2000) https://doi.org/10.1063/1.126426

View articletitled, A microcantilever-based alcohol vapor sensor-application and response model

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Characteristic length of hot-electron transport in silicon metal–oxide–semiconductor field-effect transistors

T. Sakamoto; H. Kawaura; T. Baba; T. Iizuka

Appl. Phys. Lett. 76, 2618–2620 (2000) https://doi.org/10.1063/1.126427

View articletitled, Characteristic length of hot-electron transport in silicon metal–oxide–semiconductor field-effect transistors

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INTERDISCIPLINARY AND GENERAL PHYSICS

Single grain boundary characterization of Nb-doped ${SrTiO}_{3}$ bicrystals using ac four-point impedance spectroscopy

Jin-Ha Hwang; Kevin D. Johnson; Thomas O. Mason; Vinayak P. Dravid

Appl. Phys. Lett. 76, 2621–2623 (2000) https://doi.org/10.1063/1.126428

View articletitled, Single grain boundary characterization of Nb-doped <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrTiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span> bicrystals using ac four-point impedance spectroscopy

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Synthesis and field-emission behavior of highly oriented boron carbonitride nanofibers

X. D. Bai; J. D. Guo; Jie Yu; E. G. Wang; Jun Yuan; Wuzong Zhou

Appl. Phys. Lett. 76, 2624–2626 (2000) https://doi.org/10.1063/1.126429

View articletitled, Synthesis and field-emission behavior of highly oriented boron carbonitride nanofibers

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Effect of ${sp}^{2}$ -phase nanostructure on field emission from amorphous carbons

A. Ilie; A. C. Ferrari; T. Yagi; J. Robertson

Appl. Phys. Lett. 76, 2627–2629 (2000) https://doi.org/10.1063/1.126430

View articletitled, Effect of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi>sp</mi><mrow><mn>2</mn></mrow></msup></math></span>-phase nanostructure on field emission from amorphous carbons

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Field emission from quasi-aligned SiCN nanorods

F. G. Tarntair; C. Y. Wen; L. C. Chen; J.-J. Wu; K. H. Chen; P. F. Kuo; S. W. Chang; Y. F. Chen; W. K. Hong; H. C. Cheng

Appl. Phys. Lett. 76, 2630–2632 (2000) https://doi.org/10.1063/1.126431

View articletitled, Field emission from quasi-aligned SiCN nanorods

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