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Issues
10 April 2000
ISSN 0003-6951
EISSN 1077-3118
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS
Photoluminescence and recombination mechanisms in superlattice
Leah Bergman; Mitra Dutta; M. A. Stroscio; S. M. Komirenko; Robert J. Nemanich; C. J. Eiting; D. J. H. Lambert; H. K. Kwon; R. D. Dupuis
Appl. Phys. Lett. 76, 1969–1971 (2000)
https://doi.org/10.1063/1.126225
Polymeric electro-optic modulator based on Y-fed directional coupler
Dechang An; Zan Shi; Lin Sun; John M. Taboada; Qingjun Zhou; Xuejun Lu; Ray T. Chen; Suning Tang; Hua Zhang; William H. Steier; Albert Ren; Larry R. Dalton
Appl. Phys. Lett. 76, 1972–1974 (2000)
https://doi.org/10.1063/1.126226
Q-switched operation of a coupled-resonator vertical-cavity laser diode
Appl. Phys. Lett. 76, 1975–1977 (2000)
https://doi.org/10.1063/1.126227
Blue cooperative upconversion in -doped multicomponent sol-gel-processed silica glass for three-dimensional display
Appl. Phys. Lett. 76, 1978–1980 (2000)
https://doi.org/10.1063/1.126228
Spontaneous polarization effects in wurtzite GaN/AlGaN quantum wells and comparison with experiment
Appl. Phys. Lett. 76, 1981–1983 (2000)
https://doi.org/10.1063/1.126229
Near-infrared laser pumped intersubband THz laser gain in InGaAs–AlAsSb–InP quantum wells
Appl. Phys. Lett. 76, 1984–1986 (2000)
https://doi.org/10.1063/1.126230
Single-mode waveguide propagation and reshaping of sub-ps terahertz pulses in sapphire fibers
Appl. Phys. Lett. 76, 1987–1989 (2000)
https://doi.org/10.1063/1.126231
Significant photoinduced refractive index change observed in porous silicon Fabry–Pérot resonators
Appl. Phys. Lett. 76, 1990–1992 (2000)
https://doi.org/10.1063/1.126279
Manipulation of colloidal gold nanoparticles in the evanescent field of a channel waveguide
Appl. Phys. Lett. 76, 1993–1995 (2000)
https://doi.org/10.1063/1.126232
Single axial-mode selection in a far-infrared p-Ge laser
Appl. Phys. Lett. 76, 1996–1998 (2000)
https://doi.org/10.1063/1.126233
Photoluminescence excitation spectroscopy of erbium-doped silicon-rich silicon oxide
Appl. Phys. Lett. 76, 1999–2001 (2000)
https://doi.org/10.1063/1.126234
PLASMAS AND ELECTRICAL DISCHARGES
Deposition rate in modulated radio-frequency silane plasmas
Appl. Phys. Lett. 76, 2002–2004 (2000)
https://doi.org/10.1063/1.126235
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
In situ growth study of NiMnSb films on MgO(001) and Si(001)
Appl. Phys. Lett. 76, 2005–2007 (2000)
https://doi.org/10.1063/1.126236
Mechanical property measurement of thin polymeric-low dielectric-constant films using bulge testing method
Appl. Phys. Lett. 76, 2008–2010 (2000)
https://doi.org/10.1063/1.126237
Ordered semiconductor ZnO nanowire arrays and their photoluminescence properties
Appl. Phys. Lett. 76, 2011–2013 (2000)
https://doi.org/10.1063/1.126238
Synchrotron-radiation-induced, selective-area deposition of gold on polyimide from solution
Appl. Phys. Lett. 76, 2014–2016 (2000)
https://doi.org/10.1063/1.126239
Quantitative determination of the order parameter in epitaxial layers of
Appl. Phys. Lett. 76, 2017–2019 (2000)
https://doi.org/10.1063/1.126240
Experimental observation of anomalous absorption of bulk shear acoustic waves by a thin layer of viscous fluid
Appl. Phys. Lett. 76, 2020–2022 (2000)
https://doi.org/10.1063/1.126241
Refined model for spectroscopic ellipsometry analysis of strained heterostructures
Appl. Phys. Lett. 76, 2023–2025 (2000)
https://doi.org/10.1063/1.126242
Change in electrical resistivity associated with the glass transition in a continuously cooled melt
Appl. Phys. Lett. 76, 2026–2028 (2000)
https://doi.org/10.1063/1.126243
Epitaxial relationship in the AlN/Si(001) heterosystem
Appl. Phys. Lett. 76, 2029–2031 (2000)
https://doi.org/10.1063/1.126244
Effects of energy back transfer on the luminescence of Yb and Er ions in YAG
Appl. Phys. Lett. 76, 2032–2034 (2000)
https://doi.org/10.1063/1.126245
Optical properties of InAs self-organized quantum dots in GaAs superlattices
Appl. Phys. Lett. 76, 2035–2037 (2000)
https://doi.org/10.1063/1.126246
Enhanced coherent terahertz emission from indium arsenide in the presence of a magnetic field
R. McLaughlin; A. Corchia; M. B. Johnston; Q. Chen; C. M. Ciesla; D. D. Arnone; G. A. C. Jones; E. H. Linfield; A. G. Davies; M. Pepper
Appl. Phys. Lett. 76, 2038–2040 (2000)
https://doi.org/10.1063/1.126247
Perovskite rare-earth nickelates in the thin-film epitaxial state
M. A. Novojilov; O. Yu. Gorbenko; I. E. Graboy; A. R. Kaul; H. W. Zandbergen; N. A. Babushkina; L. M. Belova
Appl. Phys. Lett. 76, 2041–2043 (2000)
https://doi.org/10.1063/1.126248
Piezoreflectance study of silicon carbon nitride nanorods
Appl. Phys. Lett. 76, 2044–2046 (2000)
https://doi.org/10.1063/1.126249
Bonding topologies in diamondlike amorphous-carbon films
Appl. Phys. Lett. 76, 2047–2049 (2000)
https://doi.org/10.1063/1.126250
Laser-induced phase transformations in semiconductor quantum dots
Appl. Phys. Lett. 76, 2050–2052 (2000)
https://doi.org/10.1063/1.126251
Temperature dependence of the Raman spectra of single-wall carbon nanotubes
H. D. Li; K. T. Yue; Z. L. Lian; Y. Zhan; L. X. Zhou; S. L. Zhang; Z. J. Shi; Z. N. Gu; B. B. Liu; R. S. Yang; H. B. Yang; G. T. Zou; Y. Zhang; S. Iijima
Appl. Phys. Lett. 76, 2053–2055 (2000)
https://doi.org/10.1063/1.126252
Gigantic resistivity and band gap changes in thin films
Appl. Phys. Lett. 76, 2056–2058 (2000)
https://doi.org/10.1063/1.126253
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
Intrinsic defect-related blue-violet and ultraviolet photoluminescence from -implanted fused silica
Appl. Phys. Lett. 76, 2062–2064 (2000)
https://doi.org/10.1063/1.126255
Doped silicon single electron transistors with single island characteristics
Appl. Phys. Lett. 76, 2065–2067 (2000)
https://doi.org/10.1063/1.126256
Scanning field emission from patterned carbon nanotube films
L. Nilsson; O. Groening; C. Emmenegger; O. Kuettel; E. Schaller; L. Schlapbach; H. Kind; J-M. Bonard; K. Kern
Appl. Phys. Lett. 76, 2071–2073 (2000)
https://doi.org/10.1063/1.126258
Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots
Appl. Phys. Lett. 76, 2074–2076 (2000)
https://doi.org/10.1063/1.126259
Correlation between surface step structure and phase separation in epitaxial GaInAsSb
Appl. Phys. Lett. 76, 2077–2079 (2000)
https://doi.org/10.1063/1.126260
Composition effect on the growth mode, strain relaxation, and critical thickness of tensile layers
Appl. Phys. Lett. 76, 2080–2082 (2000)
https://doi.org/10.1063/1.126261
Charged defects in highly emissive organic wide-band-gap semiconductors
Appl. Phys. Lett. 76, 2083–2085 (2000)
https://doi.org/10.1063/1.126262
Electrical conduction in diamond after vacancy generation by means of carbon-ion implantation
Appl. Phys. Lett. 76, 2095–2097 (2000)
https://doi.org/10.1063/1.126266
Dependence of impurity incorporation on the polar direction of GaN film growth
Appl. Phys. Lett. 76, 2098–2100 (2000)
https://doi.org/10.1063/1.126267
Ab initio study of phonons in wurtzite alloys
Appl. Phys. Lett. 76, 2101–2103 (2000)
https://doi.org/10.1063/1.126268
MAGNETISM AND SUPERCONDUCTIVITY
Silver ion implantation in epitaxial thin films: Large temperature coefficient of resistance for bolometric applications
Appl. Phys. Lett. 76, 2104–2106 (2000)
https://doi.org/10.1063/1.126269
Trapped magnetic fields larger than 14 T in bulk
Appl. Phys. Lett. 76, 2107–2109 (2000)
https://doi.org/10.1063/1.126278
Structure and magnetic properties of nanocrystalline
Appl. Phys. Lett. 76, 2110–2112 (2000)
https://doi.org/10.1063/1.126270
Coherent control of precessional dynamics in thin film permalloy
Appl. Phys. Lett. 76, 2113–2115 (2000)
https://doi.org/10.1063/1.126280
Magnetoquenched superconducting valve with bilayer ferromagnetic film for uniaxial switching
Appl. Phys. Lett. 76, 2116–2118 (2000)
https://doi.org/10.1063/1.126271
Very high-current-density Nb/AlN/Nb tunnel junctions for low-noise submillimeter mixers
Jonathan Kawamura; David Miller; Jian Chen; Jonas Zmuidzinas; Bruce Bumble; Henry G. LeDuc; Jeff A. Stern
Appl. Phys. Lett. 76, 2119–2121 (2000)
https://doi.org/10.1063/1.126272
DIELECTRICS AND FERROELECTRICITY
Lattice dynamics of hexagonal and cubic InN: Raman-scattering experiments and calculations
G. Kaczmarczyk; A. Kaschner; S. Reich; A. Hoffmann; C. Thomsen; D. J. As; A. P. Lima; D. Schikora; K. Lischka; R. Averbeck; H. Riechert
Appl. Phys. Lett. 76, 2122–2124 (2000)
https://doi.org/10.1063/1.126273
Growth of oriented lithium niobate on silicon by alternating gas flow chemical beam epitaxy with metalorganic precursors
Appl. Phys. Lett. 76, 2125–2127 (2000)
https://doi.org/10.1063/1.126274
DEVICE PHYSICS
High-efficiency transparent organic light-emitting devices
Appl. Phys. Lett. 76, 2128–2130 (2000)
https://doi.org/10.1063/1.126275
INTERDISCIPLINARY AND GENERAL PHYSICS
High rate epitaxial lift-off of InGaP films from GaAs substrates
J. J. Schermer; G. J. Bauhuis; P. Mulder; W. J. Meulemeesters; E. Haverkamp; M. M. A. J. Voncken; P. K. Larsen
Appl. Phys. Lett. 76, 2131–2133 (2000)
https://doi.org/10.1063/1.126276
Improved tip performance for scanning near-field optical microscopy by the attachment of a single gold nanoparticle
Appl. Phys. Lett. 76, 2134–2136 (2000)
https://doi.org/10.1063/1.126277
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures
Tomoya Okuda, Shunsuke Ota, et al.
Era of entropy: Synthesis, structure, properties, and applications of high-entropy materials
Christina M. Rost, Alessandro R. Mazza, et al.