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Volume 76, Issue 14

3 April 2000

Applied Physics Letters Cover Image for Volume 76, Issue 14

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
PLASMAS AND ELECTRICAL DISCHARGES
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
DEVICE PHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS
COMMENTS

LASERS, OPTICS, AND OPTOELECTRONICS

Thermal imaging through ordered bundles of infrared-transmitting silver-halide fibers

E. Rave; D. Shemesh; A. Katzir

Appl. Phys. Lett. 76, 1795–1797 (2000) https://doi.org/10.1063/1.126168

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Polarization of ${}^{129}{Xe}$ with high power external-cavity laser diode arrays

J. N. Zerger; M. J. Lim; K. P. Coulter; T. E. Chupp

Appl. Phys. Lett. 76, 1798–1800 (2000) https://doi.org/10.1063/1.126169

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Phase-modulated beams technique for thin photorefractive films characterization

Yu. O. Barmenkov; A. V. Kir’yanov; A. N. Starodumov; N. M. Kozhevnikov; H. Lemmetyinen

Appl. Phys. Lett. 76, 1801–1803 (2000) https://doi.org/10.1063/1.126170

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Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

N. Nakada; M. Nakaji; H. Ishikawa; T. Egawa; M. Umeno; T. Jimbo

Appl. Phys. Lett. 76, 1804–1806 (2000) https://doi.org/10.1063/1.126171

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4.8 μm vertical emitting PbTe quantum-well lasers based on high-finesse ${EuTe/Pb}_{1−x} {Eu}_{x} Te$ microcavities

G. Springholz; T. Schwarzl; M. Aigle; H. Pascher; W. Heiss

Appl. Phys. Lett. 76, 1807–1809 (2000) https://doi.org/10.1063/1.126172

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Control of color and efficiency of light-emitting diodes based on polyfluorenes blended with hole-transporting molecules

D. Sainova; T. Miteva; H. G. Nothofer; U. Scherf; I. Glowacki; J. Ulanski; H. Fujikawa; D. Neher

Appl. Phys. Lett. 76, 1810–1812 (2000) https://doi.org/10.1063/1.126173

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High-performance blue light-emitting diode based on a binaphthyl-containing polyfluorene

Xuezhong Jiang; Sen Liu; Hong Ma; Alex K.-Y. Jen

Appl. Phys. Lett. 76, 1813–1815 (2000) https://doi.org/10.1063/1.126174

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Observation of Bragg reflection in photonic crystals synthesized from air spheres in a titania matrix

A. Richel; N. P. Johnson; D. W. McComb

Appl. Phys. Lett. 76, 1816–1818 (2000) https://doi.org/10.1063/1.126175

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PLASMAS AND ELECTRICAL DISCHARGES

Enhancement of soft x-ray emission from a cryogenically cooled Ar gas jet irradiated by 25 fs laser pulse

T. Mocek; C. M. Kim; H. J. Shin; D. G. Lee; Y. H. Cha; K. H. Hong; C. H. Nam

Appl. Phys. Lett. 76, 1819–1821 (2000) https://doi.org/10.1063/1.126176

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Enhancement of ion extraction from a cold plasma with radio-frequency plasma heating

Akira Ohzu; Yoji Suzuki; Yoichiro Maruyama; Takashi Arisawa

Appl. Phys. Lett. 76, 1822–1824 (2000) https://doi.org/10.1063/1.126177

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Defect-enhanced solid-state amorphization in ${Zr}_{100−x} {Al}_{x} / Ni$ thin-film diffusion couples

M. Gimbel; S. Schneider; E. Spiecker; M. Seibt

Appl. Phys. Lett. 76, 1825–1827 (2000) https://doi.org/10.1063/1.126178

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Optically detected magnetic-resonance mapping on the yellow luminescence in GaN

F. K. Koschnick; K. Michael; J.-M. Spaeth; B. Beaumont; P. Gibart

Appl. Phys. Lett. 76, 1828–1830 (2000) https://doi.org/10.1063/1.126179

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Influence of molybdenum on the formation of ${C54 TiSi}_{2} :$ Template phenomenon versus grain-size effect

S.-L. Zhang; F. M. d’Heurle

Appl. Phys. Lett. 76, 1831–1833 (2000) https://doi.org/10.1063/1.126180

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Enhancement of silicon oxidation rate due to tensile mechanical stress

Jui-Yuan Yen; Jenn-Gwo Hwu

Appl. Phys. Lett. 76, 1834–1835 (2000) https://doi.org/10.1063/1.126181

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Waveguide ultrasonic force microscopy at 60 MHz

K. Inagaki; O. V. Kolosov; G. A. D. Briggs; O. B. Wright

Appl. Phys. Lett. 76, 1836–1838 (2000) https://doi.org/10.1063/1.126184

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Defect annihilation in AlN thin films by ultrahigh temperature processing

Z. Y. Fan; G. Rong; N. Newman; David J. Smith

Appl. Phys. Lett. 76, 1839–1841 (2000) https://doi.org/10.1063/1.126185

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Selective growth of high quality GaN on Si(111) substrates

M. Seon; T. Prokofyeva; M. Holtz; S. A. Nikishin; N. N. Faleev; H. Temkin

Appl. Phys. Lett. 76, 1842–1844 (2000) https://doi.org/10.1063/1.126186

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Highly ordered films of quaterthiophene grown by seeded supersonic beams

S. Iannotta; T. Toccoli; F. Biasioli; A. Boschetti; M. Ferrari

Appl. Phys. Lett. 76, 1845–1847 (2000) https://doi.org/10.1063/1.126187

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Second-harmonic generation from realistic film–substrate interfaces: The effects of strain

I. L. Lyubchanskii; N. N. Dadoenkova; M. I. Lyubchanskii; Th. Rasing; Jae-Woo Jeong; Sung-Chul Shin

Appl. Phys. Lett. 76, 1848–1850 (2000) https://doi.org/10.1063/1.126188

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Dynamic photoluminescence change of porous Si upon exposure to thermoelectrons/D atoms and $D_{2} O$

T. Wadayama; T. Arigane; K. Hayamizu; T. Shibahara; D. Hino; A. Hatta

Appl. Phys. Lett. 76, 1851–1853 (2000) https://doi.org/10.1063/1.126189

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Dielectric function of aggregates of small metallic particles embedded in host insulating matrix

Leonid G. Grechko; Vitaly N. Pustovit; Keith W. Whites

Appl. Phys. Lett. 76, 1854–1856 (2000) https://doi.org/10.1063/1.126190

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Detection of luminescent single ultrasmall silicon nanoparticles using fluctuation correlation spectroscopy

O. Akcakir; J. Therrien; G. Belomoin; N. Barry; J. D. Muller; E. Gratton; M. Nayfeh

Appl. Phys. Lett. 76, 1857–1859 (2000) https://doi.org/10.1063/1.126191

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Interface structure of hydride vapor phase epitaxial GaN grown with high-temperature reactively sputtered AlN buffer

E. Valcheva; T. Paskova; S. Tungasmita; P. O. Å. Persson; J. Birch; E. B. Svedberg; L. Hultman; B. Monemar

Appl. Phys. Lett. 76, 1860–1862 (2000) https://doi.org/10.1063/1.126192

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Resonant x-ray scattering at the Se edge in liquid crystal free-standing films and devices

L. S. Matkin; H. F. Gleeson; P. Mach; C. C. Huang; R. Pindak; G. Srajer; J. Pollmann; J. W. Goodby; M. Hird; A. Seed

Appl. Phys. Lett. 76, 1863–1865 (2000) https://doi.org/10.1063/1.126193

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Carrier transport in GaAs/AlAs type-II superlattices under electric field: Switch from $X–X$ to $Γ–Γ$ transfer

M. Hosoda; N. Ohtani; K. Kuroyanagi; C. Domoto

Appl. Phys. Lett. 76, 1866–1868 (2000) https://doi.org/10.1063/1.126194

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Cerenkov generation of high-frequency confined acoustic phonons in quantum wells

S. M. Komirenko; K. W. Kim; A. A. Demidenko; V. A. Kochelap; M. A. Stroscio

Appl. Phys. Lett. 76, 1869–1871 (2000) https://doi.org/10.1063/1.126195

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Spectral diffusion of the exciton transition in a single self-organized quantum dot

J. Seufert; R. Weigand; G. Bacher; T. Kümmell; A. Forchel; K. Leonardi; D. Hommel

Appl. Phys. Lett. 76, 1872–1874 (2000) https://doi.org/10.1063/1.126196

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Field-effect transistor made of individual $V_{2} O_{5}$ nanofibers

G. T. Kim; J. Muster; V. Krstic; J. G. Park; Y. W. Park; S. Roth; M. Burghard

Appl. Phys. Lett. 76, 1875–1877 (2000) https://doi.org/10.1063/1.126197

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Improved contact performance of GaN film using Si diffusion

C. F. Lin; H. C. Cheng; G. C. Chi; C. J. Bu; M. S. Feng

Appl. Phys. Lett. 76, 1878–1880 (2000) https://doi.org/10.1063/1.126198

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Controllable capacitance–voltage hysteresis width in the aluminum–cerium-dioxide–silicon metal–insulator–semiconductor structure: Application to nonvolatile memory devices without ferroelectrics

L. Kim; J. Kim; D. Jung; Y. Roh

Appl. Phys. Lett. 76, 1881–1883 (2000) https://doi.org/10.1063/1.126199

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Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates

J. A. Carlin; S. A. Ringel; E. A. Fitzgerald; M. Bulsara; B. M. Keyes

Appl. Phys. Lett. 76, 1884–1886 (2000) https://doi.org/10.1063/1.126200

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Low-energy grazing-angle argon-ion irradiation of silicon: A viable option for cleaning?

P. C. Zalm; J. A. van den Berg; J. G. M. van Berkum; P. Bailey; T. C. Q. Noakes

Appl. Phys. Lett. 76, 1887–1889 (2000) https://doi.org/10.1063/1.126201

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Field effect enhanced signal-to-noise ratio in chemically deposited PbS thin films on ${Si}_{3} N_{4} /n- Si$ substrates

L. Pintilie; E. Pentia; I. Pintilie; T. Botila

Appl. Phys. Lett. 76, 1890–1892 (2000) https://doi.org/10.1063/1.126202

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Velocity overshoot onset in nitride semiconductors

C. G. Rodrigues; V. N. Freire; A. R. Vasconcellos; R. Luzzi

Appl. Phys. Lett. 76, 1893–1895 (2000) https://doi.org/10.1063/1.126203

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Low-dose nitrogen implants in 6H–silicon carbide

N. S. Saks; A. K. Agarwal; S. S. Mani; V. S. Hegde

Appl. Phys. Lett. 76, 1896–1898 (2000) https://doi.org/10.1063/1.126204

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Effect of Ar ion beam channeling on AlGaN/GaN heterostructures during the ion beam etching process

O. Breitschädel; J. T. Hsieh; B. Kuhn; F. Scholz; H. Schweizer

Appl. Phys. Lett. 76, 1899–1901 (2000) https://doi.org/10.1063/1.126205

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A catchment model of high electric field conduction in high concentration narrow-gap semiconductors

A. C. H. Rowe; C. Gatzke; R. A. Stradling; S. A. Solin

Appl. Phys. Lett. 76, 1902–1904 (2000) https://doi.org/10.1063/1.126206

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Photoluminescence properties of ZnO epilayers grown on ${CaF}_{2} (111)$ by plasma assisted molecular beam epitaxy

H. J. Ko; Y. F. Chen; Z. Zhu; T. Yao; I. Kobayashi; H. Uchiki

Appl. Phys. Lett. 76, 1905–1907 (2000) https://doi.org/10.1063/1.126207

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MAGNETISM AND SUPERCONDUCTIVITY

Electrical and magnetic properties of ${La}_{0.5} {Sr}_{0.5} {CoO}_{3}$ thin films

G. P. Luo; Y. S. Wang; S. Y. Chen; A. K. Heilman; C. L. Chen; C. W. Chu; Y. Liou; N. B. Ming

Appl. Phys. Lett. 76, 1908–1910 (2000) https://doi.org/10.1063/1.126208

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Kinetics of ${YBa}_{2} {Cu}_{3} O_{7}$ film growth by postdeposition processing

Vyacheslav F. Solovyov; Harold J. Wiesmann; Li-jun Wu; Yimei Zhu; Masaki Suenaga

Appl. Phys. Lett. 76, 1911–1913 (2000) https://doi.org/10.1063/1.126209

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Colossal magnetoresistance magnetic tunnel junctions grown by molecular-beam epitaxy

J. O’Donnell; A. E. Andrus; S. Oh; E. V. Colla; J. N. Eckstein

Appl. Phys. Lett. 76, 1914–1916 (2000) https://doi.org/10.1063/1.126210

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Metastable phases of cobalt-ironsilicide formed by sequential implantation of Co and Fe in Si (111)

I. Dézsi; Cs. Fetzer; M. Kiss; H. Pattyn; A. Vantomme; G. Langouche

Appl. Phys. Lett. 76, 1917–1919 (2000) https://doi.org/10.1063/1.126211

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DIELECTRICS AND FERROELECTRICITY

Large dielectric constant ${(ε/ε}_{} >6000) {Ba}_{0.4} {Sr}_{0.6} {TiO}_{3}$ thin films for high-performance microwave phase shifters

C. M. Carlson; T. V. Rivkin; P. A. Parilla; J. D. Perkins; D. S. Ginley; A. B. Kozyrev; V. N. Oshadchy; A. S. Pavlov

Appl. Phys. Lett. 76, 1920–1922 (2000) https://doi.org/10.1063/1.126212

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Probing local leakage current and ferroelectricity of ${Pb(Zr}_{0.53} {, Ti}_{0.47} {)O}_{3} {/YBa}_{2} {Cu}_{3} O_{7−x}$ heterostructure by a modified atomic force microscope

Z. Xie; E. Z. Luo; J. B. Xu; I. H. Wilson; H. B. Peng; L. H. Zhao; B. R. Zhao

Appl. Phys. Lett. 76, 1923–1925 (2000) https://doi.org/10.1063/1.126213

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Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing

Byoung Hun Lee; Laegu Kang; Renee Nieh; Wen-Jie Qi; Jack C. Lee

Appl. Phys. Lett. 76, 1926–1928 (2000) https://doi.org/10.1063/1.126214

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Dielectric loss of ${SrTiO}_{3}$ single crystals under direct current bias

Chen Ang; A. S. Bhalla; Ruyan Guo; L. E. Cross

Appl. Phys. Lett. 76, 1929–1931 (2000) https://doi.org/10.1063/1.126215

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Characteristics of the surface layer of barium strontium titanate thin films deposited by laser ablation

V. Craciun; R. K. Singh

Appl. Phys. Lett. 76, 1932–1934 (2000) https://doi.org/10.1063/1.126216

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Epitaxial $Y_{2} O_{3}$ films grown on Si(111) by pulsed-laser ablation

M. E. Hunter; M. J. Reed; N. A. El-Masry; J. C. Roberts; S. M. Bedair

Appl. Phys. Lett. 76, 1935–1937 (2000) https://doi.org/10.1063/1.126217

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DEVICE PHYSICS

Polycrystalline silicon/metal stacked gate for threshold voltage control in metal–oxide–semiconductor field-effect transistors

Igor Polishchuk; Chenming Hu

Appl. Phys. Lett. 76, 1938–1940 (2000) https://doi.org/10.1063/1.126218

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Low-voltage, 30 nm channel length, organic transistors with a self-assembled monolayer as gate insulating films

J. Collet; O. Tharaud; A. Chapoton; D. Vuillaume

Appl. Phys. Lett. 76, 1941–1943 (2000) https://doi.org/10.1063/1.126219

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Lateral intersubband photocurrent spectroscopy on InAs/GaAs quantum dots

L. Chu; A. Zrenner; G. Böhm; G. Abstreiter

Appl. Phys. Lett. 76, 1944–1946 (2000) https://doi.org/10.1063/1.126220

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Mesoscopic electronic devices made by local oxidation of a titanium film covering gold islands

R. J. M. Vullers; M. Ahlskog; M. Cannaerts; C. Van Haesendonck

Appl. Phys. Lett. 76, 1947–1949 (2000) https://doi.org/10.1063/1.126221

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INTERDISCIPLINARY AND GENERAL PHYSICS

Thin film characterization by atomic force microscopy at ultrasonic frequencies

K. B. Crozier; G. G. Yaralioglu; F. L. Degertekin; J. D. Adams; S. C. Minne; C. F. Quate

Appl. Phys. Lett. 76, 1950–1952 (2000) https://doi.org/10.1063/1.126222

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Near-field fluorescence imaging by localized field enhancement near a sharp probe tip

Hendrik F. Hamann; Alan Gallagher; David J. Nesbitt

Appl. Phys. Lett. 76, 1953–1955 (2000) https://doi.org/10.1063/1.126223

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COMMENTS

Comment on “Giant magnetoresistance of a two-dimensional ferromagnet ${La}_{2−2x} {Ca}_{1+2x} {Mn}_{2} O_{7}$ ” [Appl. Phys. Lett. 68, 3638 (1996)]

R. Ganguly; V. Siruguri; I. K. Gopalakrishnan; J. V. Yakhmi

Appl. Phys. Lett. 76, 1956–1957 (2000) https://doi.org/10.1063/1.126224

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