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Issues
27 March 2000
ISSN 0003-6951
EISSN 1077-3118
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS
Length scales of charge transport in organic photorefractive materials
Appl. Phys. Lett. 76, 1644–1646 (2000)
https://doi.org/10.1063/1.126122
Theoretical analysis of filamentation and fundamental-mode operation in InGaN quantum well lasers
Appl. Phys. Lett. 76, 1647–1649 (2000)
https://doi.org/10.1063/1.126123
Improvement of output coupling efficiency of organic light-emitting diodes by backside substrate modification
Appl. Phys. Lett. 76, 1650–1652 (2000)
https://doi.org/10.1063/1.126124
Nonvolatile two-color holographic recording in Tb-doped
Appl. Phys. Lett. 76, 1653–1655 (2000)
https://doi.org/10.1063/1.126125
Simplified-antiresonant reflecting optical waveguide-type vertical-cavity surface-emitting lasers
Appl. Phys. Lett. 76, 1659–1661 (2000)
https://doi.org/10.1063/1.126127
A quasicontinuous wave, optically pumped violet vertical cavity surface emitting laser
Y.-K. Song; H. Zhou; M. Diagne; A. V. Nurmikko; R. P. Schneider, Jr.; C. P. Kuo; M. R. Krames; R. S. Kern; C. Carter-Coman; F. A. Kish
Appl. Phys. Lett. 76, 1662–1664 (2000)
https://doi.org/10.1063/1.126128
PLASMAS AND ELECTRICAL DISCHARGES
Application of carbon nanotubes as electrodes in gas discharge tubes
Appl. Phys. Lett. 76, 1668–1670 (2000)
https://doi.org/10.1063/1.126130
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes
S. F. Chichibu; K. Wada; J. Müllhäuser; O. Brandt; K. H. Ploog; T. Mizutani; A. Setoguchi; R. Nakai; M. Sugiyama; H. Nakanishi; K. Korii; T. Deguchi; T. Sota; S. Nakamura
Appl. Phys. Lett. 76, 1671–1673 (2000)
https://doi.org/10.1063/1.126131
Influence of gas flow stoichiometry on the luminescence of organometallic-vapor-phase-grown epilayers
Appl. Phys. Lett. 76, 1674–1676 (2000)
https://doi.org/10.1063/1.126132
Heteroepitaxial growth of cubic GaN on Si(001) coated with thin flat SiC by plasma-assisted molecular-beam epitaxy
Appl. Phys. Lett. 76, 1683–1685 (2000)
https://doi.org/10.1063/1.126135
Cubic GaN epilayers grown by molecular beam epitaxy on thin β-SiC/Si (001) substrates
D. J. As; T. Frey; D. Schikora; K. Lischka; V. Cimalla; J. Pezoldt; R. Goldhahn; S. Kaiser; W. Gebhardt
Appl. Phys. Lett. 76, 1686–1688 (2000)
https://doi.org/10.1063/1.126136
Dense arrays of ordered GaAs nanostructures by selective area growth on substrates patterned by block copolymer lithography
R. R. Li; P. D. Dapkus; M. E. Thompson; W. G. Jeong; C. Harrison; P. M. Chaikin; R. A. Register; D. H. Adamson
Appl. Phys. Lett. 76, 1689–1691 (2000)
https://doi.org/10.1063/1.126137
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
A reduced complexity process for organic thin film transistors
Appl. Phys. Lett. 76, 1692–1694 (2000)
https://doi.org/10.1063/1.126138
p-type doping with N and Li acceptors of ZnS grown by metalorganic vapor phase epitaxy
Appl. Phys. Lett. 76, 1695–1697 (2000)
https://doi.org/10.1063/1.126139
Effects of charged self-assembled quantum dots on two-dimensional quantum transport
Appl. Phys. Lett. 76, 1704–1706 (2000)
https://doi.org/10.1063/1.126142
Magnetoresistance in n- and p-type Mechanisms and applications
Appl. Phys. Lett. 76, 1710–1712 (2000)
https://doi.org/10.1063/1.126144
Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
G. Y. Chung; C. C. Tin; J. R. Williams; K. McDonald; M. Di Ventra; S. T. Pantelides; L. C. Feldman; R. A. Weller
Appl. Phys. Lett. 76, 1713–1715 (2000)
https://doi.org/10.1063/1.126167
Experimental evidence for recombination-assisted leakage in thin oxides
Appl. Phys. Lett. 76, 1719–1721 (2000)
https://doi.org/10.1063/1.126146
Hole-induced transient bandgap renormalization: A mechanism for photo-induced absorption in defect-engineered semiconductors
Appl. Phys. Lett. 76, 1722–1724 (2000)
https://doi.org/10.1063/1.126147
Modification of GaN Schottky barrier interfaces probed by ballistic-electron-emission microscopy and spectroscopy
Appl. Phys. Lett. 76, 1725–1727 (2000)
https://doi.org/10.1063/1.126148
Effects of alloy disorder on the transport properties of epilayers probed by persistent photoconductivity
Appl. Phys. Lett. 76, 1728–1730 (2000)
https://doi.org/10.1063/1.126149
Transient and steady-state space-charge-limited currents in polyfluorene copolymer diode structures with ohmic hole injecting contacts
Alasdair J. Campbell; Donal D. C. Bradley; Homer Antoniadis; Mike Inbasekaran; Weishi W. Wu; Ed P. Woo
Appl. Phys. Lett. 76, 1734–1736 (2000)
https://doi.org/10.1063/1.126182
Effect of silicon doping on the optical and transport properties of InGaN/GaN multiple-quantum-well structures
Appl. Phys. Lett. 76, 1737–1739 (2000)
https://doi.org/10.1063/1.126151
Surface polarity dependence of Mg doping in GaN grown by molecular-beam epitaxy
Appl. Phys. Lett. 76, 1740–1742 (2000)
https://doi.org/10.1063/1.126152
MAGNETISM AND SUPERCONDUCTIVITY
Crystallographic and magneto-optical studies of nanoscaled MnSb dots grown on GaAs
Appl. Phys. Lett. 76, 1743–1745 (2000)
https://doi.org/10.1063/1.126153
Nanocomposite Nd-rich Nd–Fe–B alloys: Approaching ideal Stoner–Wohlfarth type behavior
Appl. Phys. Lett. 76, 1746–1748 (2000)
https://doi.org/10.1063/1.126154
Phonon spectrometry with a bolometer based on spin-lattice relaxation
Appl. Phys. Lett. 76, 1749–1751 (2000)
https://doi.org/10.1063/1.126155
Linewidth of a resistively shunted high-temperature-superconductor Josephson heterodyne oscillator
Appl. Phys. Lett. 76, 1752–1754 (2000)
https://doi.org/10.1063/1.126156
Low angle grain boundary transport in coated conductors
D. T. Verebelyi; D. K. Christen; R. Feenstra; C. Cantoni; A. Goyal; D. F. Lee; M. Paranthaman; P. N. Arendt; R. F. DePaula; J. R. Groves; C. Prouteau
Appl. Phys. Lett. 76, 1755–1757 (2000)
https://doi.org/10.1063/1.126157
DIELECTRICS AND FERROELECTRICITY
Low-temperature preparation and characterization of thin films on (100)-oriented electrodes
Appl. Phys. Lett. 76, 1758–1760 (2000)
https://doi.org/10.1063/1.126158
DEVICE PHYSICS
Noise and conversion properties of Y–Ba–Cu–O Josephson mixers at operating temperatures above 20 K
Appl. Phys. Lett. 76, 1764–1766 (2000)
https://doi.org/10.1063/1.126160
Al composition dependence of breakdown voltage in Schottky rectifiers
A. P. Zhang; G. Dang; F. Ren; J. Han; A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; J. M. Redwing; X. A. Cao; S. J. Pearton
Appl. Phys. Lett. 76, 1767–1769 (2000)
https://doi.org/10.1063/1.126161
Transient electroluminescence under double voltage pulse: Charge accumulation in light-emitting devices based on alizarin violet
Appl. Phys. Lett. 76, 1770–1772 (2000)
https://doi.org/10.1063/1.126162
INTERDISCIPLINARY AND GENERAL PHYSICS
Electron-beam-induced conduction in a ruthenium carbonyl nanoparticle polymer
Appl. Phys. Lett. 76, 1773–1775 (2000)
https://doi.org/10.1063/1.126163
Field emission from well-aligned, patterned, carbon nanotube emitters
Appl. Phys. Lett. 76, 1776–1778 (2000)
https://doi.org/10.1063/1.126164
Charge localization in optoelectronic and photocatalytic applications: Computational perspective
Francesco Ambrosio, Julia Wiktor
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Diamagnetic levitation of water realized with a simple device consisting of ordinary permanent magnets
Tomoya Naito, Tomoaki Suzuki, et al.