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Volume 76, Issue 12

20 March 2000

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
PLASMAS AND ELECTRICAL DISCHARGES
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
DEVICE PHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS
ERRATA

LASERS, OPTICS, AND OPTOELECTRONICS

InGaN/GaN multi-quantum well distributed Bragg reflector laser diode

Jaehee Cho; S. Cho; B. J. Kim; S. Chae; C. Sone; O. H. Nam; J. W. Lee; Y. Park; T. I. Kim

Appl. Phys. Lett. 76, 1489–1491 (2000) https://doi.org/10.1063/1.126072

View articletitled, InGaN/GaN multi-quantum well distributed Bragg reflector laser diode

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Self-aligned current aperture in native oxidized AlInAs buried heterostructure InGaAsP/InP distributed feedback laser

Zhi-jie Wang; Soo-jin Chua; Zi-ying Zhang; Fan Zhou; Jing-yuan Zhang; Xiao-jie Wang; Wei Wang; Hong-liang Zhu

Appl. Phys. Lett. 76, 1492–1494 (2000) https://doi.org/10.1063/1.126073

View articletitled, Self-aligned current aperture in native oxidized AlInAs buried heterostructure InGaAsP/InP distributed feedback laser

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Midinfrared emission from InGaN/GaN-based light-emitting diodes

Daniel Hofstetter; Jérôme Faist; David P. Bour

Appl. Phys. Lett. 76, 1495–1497 (2000) https://doi.org/10.1063/1.126074

View articletitled, Midinfrared emission from InGaN/GaN-based light-emitting diodes

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${Ti:LiNbO}_{3}$ waveguide polarizer with a Zn-doped overlayer prepared by liquid-phase epitaxy

Junichiro Ichikawa; Satoshi Uda; Kiyoshi Shimamura; Tsuguo Fukuda; Hirotoshi Nagata; Junichiro Minowa

Appl. Phys. Lett. 76, 1498–1500 (2000) https://doi.org/10.1063/1.126075

View articletitled, <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ti:LiNbO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span> waveguide polarizer with a Zn-doped overlayer prepared by liquid-phase epitaxy

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Nanosecond transients in the electroluminescence from multilayer blue organic light-emitting devices based on ${4,4}^{'} - bis {(2,2}^{'} diphenyl vinyl {)-1,1}^{'} - biphenyl$

V. Savvate’ev; J. H. Friedl; L. Zou; J. Shinar; K. Christensen; W. Oldham; L. J. Rothberg; Z. Chen-Esterlit; R. Kopelman

Appl. Phys. Lett. 76, 1501–1503 (2000) https://doi.org/10.1063/1.126076

View articletitled, Nanosecond transients in the electroluminescence from multilayer blue organic light-emitting devices based on <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mtext>4,4</mtext><mrow><mi>′</mi></mrow></msup><mi xmlns="">-</mi><mi mathvariant="normal" xmlns="">bis</mi><msup xmlns=""><mtext>(2,2</mtext><mrow><mi>′</mi></mrow></msup><mi mathvariant="normal" xmlns="">diphenyl vinyl</mi><msup xmlns=""><mtext>)-1,1</mtext><mrow><mi>′</mi></mrow></msup><mi xmlns="">-</mi><mi mathvariant="normal" xmlns="">biphenyl</mi></math></span>

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Simple model for calculating the ratio of the carrier capture and escape times in quantum-well lasers

B. Romero; J. Arias; I. Esquivias; M. Cada

Appl. Phys. Lett. 76, 1504–1506 (2000) https://doi.org/10.1063/1.126077

View articletitled, Simple model for calculating the ratio of the carrier capture and escape times in quantum-well lasers

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Near-infrared to visible up-conversion in a forward-biased Schottky diode with a p-doped channel

J. S. Sandhu; A. P. Heberle; B. W. Alphenaar; J. R. A. Cleaver

Appl. Phys. Lett. 76, 1507–1509 (2000) https://doi.org/10.1063/1.126078

View articletitled, Near-infrared to visible up-conversion in a forward-biased Schottky diode with a <em>p</em>-doped channel

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Two-photon photocurrent imaging of vertical cavity surface emitting lasers

Chris Xu; Leo M. F. Chirovsky; W. S. Hobson; J. Lopata; Wayne H. Knox; John E. Cunningham; William Y. Jan; L. A. D’Asaro

Appl. Phys. Lett. 76, 1510–1512 (2000) https://doi.org/10.1063/1.126079

View articletitled, Two-photon photocurrent imaging of vertical cavity surface emitting lasers

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Birefringence compensation in single solid-state rods

R. Fluck; M. R. Hermann; L. A. Hackel

Appl. Phys. Lett. 76, 1513–1515 (2000) https://doi.org/10.1063/1.126080

View articletitled, Birefringence compensation in single solid-state rods

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Room-temperature electroluminescence from electron-hole plasmas in the metal–oxide–silicon tunneling diodes

C. W. Liu; M. H. Lee; Miin-Jang Chen; I. C. Lin; Ching-Fuh Lin

Appl. Phys. Lett. 76, 1516–1518 (2000) https://doi.org/10.1063/1.126081

View articletitled, Room-temperature electroluminescence from electron-hole plasmas in the metal–oxide–silicon tunneling diodes

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A cross-correlation spectroscopy in subterahertz region using an incoherent light source

O. Morikawa; M. Tonouchi; M. Hangyo

Appl. Phys. Lett. 76, 1519–1521 (2000) https://doi.org/10.1063/1.126082

View articletitled, A cross-correlation spectroscopy in subterahertz region using an incoherent light source

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Comparison of experimental and theoretical gain-current relations in GaInP quantum well lasers

P. M. Smowton; P. Blood; W. W. Chow

Appl. Phys. Lett. 76, 1522–1524 (2000) https://doi.org/10.1063/1.126083

View articletitled, Comparison of experimental and theoretical gain-current relations in GaInP quantum well lasers

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Voltage-controlled yellow or orange emission from GaN codoped with Er and Eu

D. S. Lee; J. Heikenfeld; R. Birkhahn; M. Garter; B. K. Lee; A. J. Steckl

Appl. Phys. Lett. 76, 1525–1527 (2000) https://doi.org/10.1063/1.126084

View articletitled, Voltage-controlled yellow or orange emission from GaN codoped with Er and Eu

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PLASMAS AND ELECTRICAL DISCHARGES

Mercury depletion as a way of changing the emission spectrum of a fluorescent lamp

L. P. Bakker; G. M. W. Kroesen

Appl. Phys. Lett. 76, 1528–1530 (2000) https://doi.org/10.1063/1.126085

View articletitled, Mercury depletion as a way of changing the emission spectrum of a fluorescent lamp

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Magnetic-field-dependent plasma composition of a pulsed arc in a high-vacuum ambient

Jochen M. Schneider; André Anders; Björgvin Hjörvarsson; Lars Hultman

Appl. Phys. Lett. 76, 1531–1533 (2000) https://doi.org/10.1063/1.126086

View articletitled, Magnetic-field-dependent plasma composition of a pulsed arc in a high-vacuum ambient

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Brittle-ductile relaxation kinetics of strained AlGaN/GaN heterostructures

S. J. Hearne; J. Han; S. R. Lee; J. A. Floro; D. M. Follstaedt; E. Chason; I. S. T. Tsong

Appl. Phys. Lett. 76, 1534–1536 (2000) https://doi.org/10.1063/1.126087

View articletitled, Brittle-ductile relaxation kinetics of strained AlGaN/GaN heterostructures

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Effects of surface resonance state on the plasmon resonance absorption of Ag nanoparticles embedded in partially oxidized amorphous Si matrix

L. Yang; G. H. Li; L. D. Zhang

Appl. Phys. Lett. 76, 1537–1539 (2000) https://doi.org/10.1063/1.126088

View articletitled, Effects of surface resonance state on the plasmon resonance absorption of Ag nanoparticles embedded in partially oxidized amorphous Si matrix

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Photoluminescence of CdSe nanocrystallites embedded in ${BaTiO}_{3}$ matrix

Ji Zhou; Longtu Li; Zhilun Gui; S. Buddhudu; Yan Zhou

Appl. Phys. Lett. 76, 1540–1542 (2000) https://doi.org/10.1063/1.126089

View articletitled, Photoluminescence of CdSe nanocrystallites embedded in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BaTiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span> matrix

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Self-enhancement in the electroluminescence of a near-infrared ionic dye

Hiroyuki Suzuki

Appl. Phys. Lett. 76, 1543–1545 (2000) https://doi.org/10.1063/1.126090

View articletitled, Self-enhancement in the electroluminescence of a near-infrared ionic dye

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Recombination dynamics of carriers in an InGaN/AlGaN single-quantum-well light-emitting diode under reverse-bias voltages

Hiromitsu Kudo; Hiroki Ishibashi; Ruisheng Zheng; Yoichi Yamada; Tsunemasa Taguchi

Appl. Phys. Lett. 76, 1546–1548 (2000) https://doi.org/10.1063/1.126091

View articletitled, Recombination dynamics of carriers in an InGaN/AlGaN single-quantum-well light-emitting diode under reverse-bias voltages

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Relationship between optical properties and crystallinity of nanometer $Y_{2} O_{3} :Eu$ phosphor

T. Igarashi; M. Ihara; T. Kusunoki; K. Ohno; T. Isobe; M. Senna

Appl. Phys. Lett. 76, 1549–1551 (2000) https://doi.org/10.1063/1.126092

View articletitled, Relationship between optical properties and crystallinity of nanometer <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Y</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><mi mathvariant="normal" xmlns="">:Eu</mi></math></span> phosphor

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Structures of nitridated layers on sapphire studied by x-ray reflectivity and diffraction

Ki-Sung Kim; Seon-Hyo Kim; Dong-Ryul Lee

Appl. Phys. Lett. 76, 1552–1554 (2000) https://doi.org/10.1063/1.126093

View articletitled, Structures of nitridated layers on sapphire studied by x-ray reflectivity and diffraction

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Experimental measurements of the strength of metals approaching the theoretical limit predicted by the equation of state

E. Moshe; S. Eliezer; Z. Henis; M. Werdiger; E. Dekel; Y. Horovitz; S. Maman; I. B. Goldberg; D. Eliezer

Appl. Phys. Lett. 76, 1555–1557 (2000) https://doi.org/10.1063/1.126094

View articletitled, Experimental measurements of the strength of metals approaching the theoretical limit predicted by the equation of state

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Adatom condensation and quantum dot sizes in InGaAs/GaAs (001)

R. Leon; J. Wellman; X. Z. Liao; J. Zou; D. J. H. Cockayne

Appl. Phys. Lett. 76, 1558–1560 (2000) https://doi.org/10.1063/1.126095

View articletitled, Adatom condensation and quantum dot sizes in InGaAs/GaAs (001)

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Bandgap closure of a flattened semiconductor carbon nanotube: A first-principles study

Mário S. C. Mazzoni; H. Chacham

Appl. Phys. Lett. 76, 1561–1563 (2000) https://doi.org/10.1063/1.126096

View articletitled, Bandgap closure of a flattened semiconductor carbon nanotube: A first-principles study

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Coiled structure of eccentric coaxial nanocable made of amorphous boron and silicon oxide

K. Suenaga; Y. Zhang; S. Iijima

Appl. Phys. Lett. 76, 1564–1566 (2000) https://doi.org/10.1063/1.126119

View articletitled, Coiled structure of eccentric coaxial nanocable made of amorphous boron and silicon oxide

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures

N.-T. Yeh; T.-E. Nee; J.-I. Chyi; T. M. Hsu; C. C. Huang

Appl. Phys. Lett. 76, 1567–1569 (2000) https://doi.org/10.1063/1.126097

View articletitled, Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures

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Self-assembled InGaN quantum dots grown by molecular-beam epitaxy

C. Adelmann; J. Simon; G. Feuillet; N. T. Pelekanos; B. Daudin; G. Fishman

Appl. Phys. Lett. 76, 1570–1572 (2000) https://doi.org/10.1063/1.126098

View articletitled, Self-assembled InGaN quantum dots grown by molecular-beam epitaxy

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Hole and electron emission from InAs quantum dots

C. M. A. Kapteyn; M. Lion; R. Heitz; D. Bimberg; P. N. Brunkov; B. V. Volovik; S. G. Konnikov; A. R. Kovsh; V. M. Ustinov

Appl. Phys. Lett. 76, 1573–1575 (2000) https://doi.org/10.1063/1.126099

View articletitled, Hole and electron emission from InAs quantum dots

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Photoreflectance spectra of excitonic polaritons in GaN substrate prepared by lateral epitaxial overgrowth

S. F. Chichibu; K. Torii; T. Deguchi; T. Sota; A. Setoguchi; H. Nakanishi; T. Azuhata; S. Nakamura

Appl. Phys. Lett. 76, 1576–1578 (2000) https://doi.org/10.1063/1.126100

View articletitled, Photoreflectance spectra of excitonic polaritons in GaN substrate prepared by lateral epitaxial overgrowth

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Intersubband transitions in GaAs coupled-quantum-wells for use as a tunable detector at THz frequencies

A. M. Tomlinson; C. C. Chang; R. J. Stone; R. J. Nicholas; A. M. Fox; M. A. Pate; C. T. Foxon

Appl. Phys. Lett. 76, 1579–1581 (2000) https://doi.org/10.1063/1.126101

View articletitled, Intersubband transitions in GaAs coupled-quantum-wells for use as a tunable detector at THz frequencies

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Control of the band-gap shift in quantum-well intermixing using a germanium interlayer

J. H. Teng; S. J. Chua; G. Li; A. Saher Helmy; J. H. Marsh

Appl. Phys. Lett. 76, 1582–1584 (2000) https://doi.org/10.1063/1.126102

View articletitled, Control of the band-gap shift in quantum-well intermixing using a germanium interlayer

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Reduction of interface-state density in $4 H - SiC n$ -type metal–oxide–semiconductor structures using high-temperature hydrogen annealing

K. Fukuda; S. Suzuki; T. Tanaka; K. Arai

Appl. Phys. Lett. 76, 1585–1587 (2000) https://doi.org/10.1063/1.126103

View articletitled, Reduction of interface-state density in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mn xmlns="">4</mn><mi mathvariant="normal" xmlns="">H</mi><mi xmlns="">–</mi><mi mathvariant="normal" xmlns="">SiC</mi><mi xmlns=""> n</mi></math></span>-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing

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Impurity reduction in ${In}_{0.53} {Ga}_{0.47} As$ layers grown by liquid phase epitaxy using Er-treated melts

S. Dhar; Shampa Paul; V. N. Kulkarni

Appl. Phys. Lett. 76, 1588–1590 (2000) https://doi.org/10.1063/1.126104

View articletitled, Impurity reduction in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi mathvariant="normal">0.53</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi mathvariant="normal">0.47</mi></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math></span> layers grown by liquid phase epitaxy using Er-treated melts

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Double-dot charge transport in Si single-electron/hole transistors

L. P. Rokhinson; L. J. Guo; S. Y. Chou; D. C. Tsui

Appl. Phys. Lett. 76, 1591–1593 (2000) https://doi.org/10.1063/1.126105

View articletitled, Double-dot charge transport in Si single-electron/hole transistors

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Nitrogen vacancy scattering in n-GaN grown by metal-organic vapor phase epitaxy

Qin-Sheng Zhu; Nobuhiko Sawaki

Appl. Phys. Lett. 76, 1594–1596 (2000) https://doi.org/10.1063/1.126106

View articletitled, Nitrogen vacancy scattering in <em>n</em>-GaN grown by metal-organic vapor phase epitaxy

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Electrical measurements of individual semiconducting single-walled carbon nanotubes of various diameters

Chongwu Zhou; Jing Kong; Hongjie Dai

Appl. Phys. Lett. 76, 1597–1599 (2000) https://doi.org/10.1063/1.126107

View articletitled, Electrical measurements of individual semiconducting single-walled carbon nanotubes of various diameters

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Indium segregation in InGaN quantum-well structures

N. Duxbury; U. Bangert; P. Dawson; E. J. Thrush; W. Van der Stricht; K. Jacobs; I. Moerman

Appl. Phys. Lett. 76, 1600–1602 (2000) https://doi.org/10.1063/1.126108

View articletitled, Indium segregation in InGaN quantum-well structures

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Highly conductive diamond probes for scanning spreading resistance microscopy

T. Hantschel; P. Niedermann; T. Trenkler; W. Vandervorst

Appl. Phys. Lett. 76, 1603–1605 (2000) https://doi.org/10.1063/1.126109

View articletitled, Highly conductive diamond probes for scanning spreading resistance microscopy

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MAGNETISM AND SUPERCONDUCTIVITY

Microwave surface resistance of ${HgBa}_{2} {CaCu}_{2} O_{6+δ}$ thin films

Roberto S. Aga; Shao-lin Yan; Yiyuan Xie; Siyuan Han; Judy Z. Wu; Quan-Xi Jia; Chuhee Kwon

Appl. Phys. Lett. 76, 1606–1608 (2000) https://doi.org/10.1063/1.126110

View articletitled, Microwave surface resistance of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">HgBa</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">CaCu</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mtext>6+δ</mtext></mrow></msub></math></span> thin films

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DIELECTRICS AND FERROELECTRICITY

Electrical conduction properties of sputter-grown $({Ba, Sr)TiO}_{3}$ thin films having ${IrO}_{2}$ electrodes

Ju Cheol Shin; Cheol Seong Hwang; Hyeong Joon Kim

Appl. Phys. Lett. 76, 1609–1611 (2000) https://doi.org/10.1063/1.126111

View articletitled, Electrical conduction properties of sputter-grown <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Ba, Sr)TiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span> thin films having <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">IrO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math></span> electrodes

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Growth of ferroelectric oxide films on $n- GaN /c$ -sapphire structures

V. Fuflyigin; A. Osinsky; F. Wang; P. Vakhutinsky; P. Norris

Appl. Phys. Lett. 76, 1612–1614 (2000) https://doi.org/10.1063/1.126112

View articletitled, Growth of ferroelectric oxide films on <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n-</mi><mi mathvariant="normal" xmlns="">GaN</mi><mi xmlns="">/c</mi></math></span>-sapphire structures

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Piezoelectric properties of rhombohedral ${Pb(Zr, Ti)O}_{3}$ thin films with (100), (111), and “random” crystallographic orientation

David V. Taylor; Dragan Damjanovic

Appl. Phys. Lett. 76, 1615–1617 (2000) https://doi.org/10.1063/1.126113

View articletitled, Piezoelectric properties of rhombohedral <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pb(Zr, Ti)O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span> thin films with (100), (111), and “random” crystallographic orientation

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Electron emission from thin-film ferroelectric cathodes

F. Liu; C. B. Fleddermann

Appl. Phys. Lett. 76, 1618–1620 (2000) https://doi.org/10.1063/1.126114

View articletitled, Electron emission from thin-film ferroelectric cathodes

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DEVICE PHYSICS

Conical diamond tips realized by a double-molding process for high-resolution profilometry and atomic force microscopy applications

C. Beuret; T. Akiyama; U. Staufer; N. F. de Rooij; P. Niedermann; W. Hänni

Appl. Phys. Lett. 76, 1621–1623 (2000) https://doi.org/10.1063/1.126115

View articletitled, Conical diamond tips realized by a double-molding process for high-resolution profilometry and atomic force microscopy applications

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INTERDISCIPLINARY AND GENERAL PHYSICS

Growth model of coupled-fractal networks

R. Ugajin; M. Ohnishi; S. Hirata; A. Ishibashi; Y. Kuroki; C. Ishimoto

Appl. Phys. Lett. 76, 1624–1626 (2000) https://doi.org/10.1063/1.126116

View articletitled, Growth model of coupled-fractal networks

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Single-domain spectroscopy of self-assembled photonic crystals

Yu. A. Vlasov; M. Deutsch; D. J. Norris

Appl. Phys. Lett. 76, 1627–1629 (2000) https://doi.org/10.1063/1.126117

View articletitled, Single-domain spectroscopy of self-assembled photonic crystals

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ERRATA

Erratum: “Single crystal superconductor nanowires by electrodeposition” [Appl. Phys. Lett. 74, 1746 (1999)]

Ge Yi; Walther Schwarzacher

Appl. Phys. Lett. 76, 1630 (2000) https://doi.org/10.1063/1.126118

View articletitled, Erratum: “Single crystal superconductor nanowires by electrodeposition” [Appl. Phys. Lett. <strong>74</strong>, 1746 (1999)]

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