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Issues
3 January 2000
ISSN 0003-6951
EISSN 1077-3118
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS
Thermal lensing effects in small oxide confined vertical-cavity surface-emitting lasers
Appl. Phys. Lett. 76, 7–9 (2000)
https://doi.org/10.1063/1.125638
PbS quantum-dot-doped glasses for ultrashort-pulse generation
Appl. Phys. Lett. 76, 10–12 (2000)
https://doi.org/10.1063/1.125639
Electroluminescence of a cubic GaN/GaAs (001) junction
Appl. Phys. Lett. 76, 13–15 (2000)
https://doi.org/10.1063/1.125640
Efficiency enhancement of free electron Maser oscillator by mode selection with a prebunched electron beam
Appl. Phys. Lett. 76, 16–18 (2000)
https://doi.org/10.1063/1.125641
Second-harmonic imaging of poled silica waveguides
Jesper Arentoft; Kjeld Pedersen; Sergey I. Bozhevolnyi; Martin Kristensen; Ping Yu; Christian B. Nielsen
Appl. Phys. Lett. 76, 25–27 (2000)
https://doi.org/10.1063/1.125644
PLASMAS AND ELECTRICAL DISCHARGES
Breakdown of the high-voltage sheath in metal plasma immersion ion implantation
Appl. Phys. Lett. 76, 28–30 (2000)
https://doi.org/10.1063/1.125645
Dynamics of an air breakdown plasma on a solid surface during picosecond laser ablation
Appl. Phys. Lett. 76, 31–33 (2000)
https://doi.org/10.1063/1.125646
Prepulse-enhanced narrow bandwidth soft x-ray emission from a low debris, subnanosecond, laser plasma source
Appl. Phys. Lett. 76, 34–36 (2000)
https://doi.org/10.1063/1.125647
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
Effect of high magnetic field on the two-step martensitic-phase transition in
Appl. Phys. Lett. 76, 37–39 (2000)
https://doi.org/10.1063/1.125648
Subgap optical absorption and recombination center efficiency in bulk GaAs irradiated by light or heavy ions
Appl. Phys. Lett. 76, 40–42 (2000)
https://doi.org/10.1063/1.125649
Quantum confinement of and transitions in Ge quantum dots embedded in an or an AlN matrix
Appl. Phys. Lett. 76, 43–45 (2000)
https://doi.org/10.1063/1.125650
Thin-film metrology of silicon-on-insulator materials
S. Zollner; T.-C. Lee; K. Noehring; A. Konkar; N. D. Theodore; W. M. Huang; D. Monk; T. Wetteroth; S. R. Wilson; J. N. Hilfiker
Appl. Phys. Lett. 76, 46–48 (2000)
https://doi.org/10.1063/1.125651
Self-ordered pore structure of anodized aluminum on silicon and pattern transfer
Appl. Phys. Lett. 76, 49–51 (2000)
https://doi.org/10.1063/1.125652
Direct evidence for oxygen stabilization of icosahedral phase during crystallization of metallic glass
Appl. Phys. Lett. 76, 55–57 (2000)
https://doi.org/10.1063/1.125654
The use of ionic salt dyes as amorphous, thermally stable emitting layers in organic light-emitting diodes
Appl. Phys. Lett. 76, 58–60 (2000)
https://doi.org/10.1063/1.125655
Determination of the mesostructure of lead borate glasses using laser photoionization mass spectroscopy
Appl. Phys. Lett. 76, 61–63 (2000)
https://doi.org/10.1063/1.125656
Sheet resistance modeling of the system upon high temperature annealing
Appl. Phys. Lett. 76, 64–66 (2000)
https://doi.org/10.1063/1.125657
Improved performance of electroluminescent devices based on an europium complex
C. J. Liang; D. Zhao; Z. R. Hong; D. X. Zhao; X. Y. Liu; W. L. Li; J. B. Peng; J. Q. Yu; C. S. Lee; S. T. Lee
Appl. Phys. Lett. 76, 67–69 (2000)
https://doi.org/10.1063/1.125658
Fusion bonding of Si wafers investigated by x ray diffraction
Appl. Phys. Lett. 76, 70–72 (2000)
https://doi.org/10.1063/1.125659
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
Piezoelectric field and confinement effects on the dielectric function spectrum of InGaN/GaN quantum wells
Appl. Phys. Lett. 76, 79–81 (2000)
https://doi.org/10.1063/1.125662
High-frequency-induced phase-dependent dc current by Bloch oscillator non-ohmicity
Appl. Phys. Lett. 76, 82–84 (2000)
https://doi.org/10.1063/1.125663
Magnetic study of texture in multifilamentary tapes: Evidence for anisotropic orientation
Appl. Phys. Lett. 76, 85–87 (2000)
https://doi.org/10.1063/1.125664
Electro-optical examination of the band structure of ordered InGaAs
Appl. Phys. Lett. 76, 88–90 (2000)
https://doi.org/10.1063/1.125665
MAGNETISM AND SUPERCONDUCTIVITY
Enhancement of by 211 particles in ternary melt-processed superconductors
Appl. Phys. Lett. 76, 91–93 (2000)
https://doi.org/10.1063/1.125666
Microstructure and magnetic behavior of carbon-coated Co nanoparticles studied by nuclear magnetic resonance
Appl. Phys. Lett. 76, 94–96 (2000)
https://doi.org/10.1063/1.125667
Magneto-optical properties and the potential application of GaAs with magnetic MnAs nanoclusters
Appl. Phys. Lett. 76, 97–99 (2000)
https://doi.org/10.1063/1.125668
Current-phase relationship of ramp-edge Josephson junctions
E. Il’ichev; V. Zakosarenko; V. Schultze; H. E. Hoenig; H.-G. Meyer; K. O. Subke; H. Burkhardt; M. Schilling
Appl. Phys. Lett. 76, 100–102 (2000)
https://doi.org/10.1063/1.125669
DIELECTRICS AND FERROELECTRICITY
Transmission electron microscopy study on ferroelectric domain structure in ceramics
Appl. Phys. Lett. 76, 103–105 (2000)
https://doi.org/10.1063/1.125670
Nanoscopic switching behavior of epitaxial films deposited by pulsed laser deposition
Appl. Phys. Lett. 76, 106–108 (2000)
https://doi.org/10.1063/1.125671
On the origin of the large piezoelectric effect in morphotropic phase boundary perovskite single crystals
Appl. Phys. Lett. 76, 109–111 (2000)
https://doi.org/10.1063/1.125672
Stable zirconium silicate gate dielectrics deposited directly on silicon
Appl. Phys. Lett. 76, 112–114 (2000)
https://doi.org/10.1063/1.125673
DEVICE PHYSICS
Space-charge-limited electron currents in 8-hydroxyquinoline aluminum
Appl. Phys. Lett. 76, 115–117 (2000)
https://doi.org/10.1063/1.125674
Empirical relationship between low-frequency drain current noise and grain-boundary potential barrier height in high-temperature-processed polycrystalline silicon thin-film transistors
C. T. Angelis; C. A. Dimitriadis; F. V. Farmakis; J. Brini; G. Kamarinos; V. K. Gueorguiev; Tz. E. Ivanov
Appl. Phys. Lett. 76, 118–120 (2000)
https://doi.org/10.1063/1.125675
Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire
Appl. Phys. Lett. 76, 121–123 (2000)
https://doi.org/10.1063/1.125676
Current–voltage characteristics of a GaAs Schottky diode accounting for leakage paths
Appl. Phys. Lett. 76, 124–125 (2000)
https://doi.org/10.1063/1.125677
INTERDISCIPLINARY AND GENERAL PHYSICS
Electrical fracture toughness for conductive cracks driven by electric fields in piezoelectric materials
Appl. Phys. Lett. 76, 126–128 (2000)
https://doi.org/10.1063/1.125678
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Superconducting flip-chip devices using indium microspheres on Au-passivated Nb or NbN as under-bump metallization layer
Achintya Paradkar, Paul Nicaise, et al.
Special issue APL organic and hybrid photodetectors
Karl Leo, Canek Fuentes-Hernandez, et al.