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Volume 75, Issue 9

30 August 1999

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
PLASMAS AND ELECTRICAL DISCHARGES
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
DEVICE PHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS

LASERS, OPTICS, AND OPTOELECTRONICS

Red light emission by photoluminescence and electroluminescence from Eu-doped GaN

J. Heikenfeld; M. Garter; D. S. Lee; R. Birkhahn; A. J. Steckl

Appl. Phys. Lett. 75, 1189–1191 (1999) https://doi.org/10.1063/1.124686

View articletitled, Red light emission by photoluminescence and electroluminescence from Eu-doped GaN

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Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser

I. L. Krestnikov; W. V. Lundin; A. V. Sakharov; V. A. Semenov; A. S. Usikov; A. F. Tsatsul’nikov; Zh. I. Alferov; N. N. Ledentsov; A. Hoffmann; D. Bimberg

Appl. Phys. Lett. 75, 1192–1194 (1999) https://doi.org/10.1063/1.124638

View articletitled, Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser

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Experimental investigation of wavelength conversion based on four-wave mixing in a three-electrode distributed feedback laser

Ioannis Tomkos; Ioannis Zacharopoulos; Eugenia Roditi; Dimitris Syvridis

Appl. Phys. Lett. 75, 1195–1197 (1999) https://doi.org/10.1063/1.124639

View articletitled, Experimental investigation of wavelength conversion based on four-wave mixing in a three-electrode distributed feedback laser

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Wavelength shifting of optical pulses through cascaded second-order processes in a lithium–niobate channel waveguide

I. Cristiani; G. P. Banfi; V. Degiorgio; L. Tartara

Appl. Phys. Lett. 75, 1198–1200 (1999) https://doi.org/10.1063/1.124640

View articletitled, Wavelength shifting of optical pulses through cascaded second-order processes in a lithium–niobate channel waveguide

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Two-dimensional metallodielectric photonic crystal with a large band gap

Chongjun Jin; Bingying Cheng; Baoyuan Man; Daozhong Zhang; Shouzheng Ban; Bo Sun; Lieming Li; Xiangdong Zhang; Zhaoqing Zhang

Appl. Phys. Lett. 75, 1201–1203 (1999) https://doi.org/10.1063/1.124641

View articletitled, Two-dimensional metallodielectric photonic crystal with a large band gap

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${AgGaS}_{2}$ optical parametric oscillator continuously tunable from 3.9 to 11.3 μm

K. L. Vodopyanov; J. P. Maffetone; I. Zwieback; W. Ruderman

Appl. Phys. Lett. 75, 1204–1206 (1999) https://doi.org/10.1063/1.124642

View articletitled, <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">AgGaS</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math></span> optical parametric oscillator continuously tunable from 3.9 to 11.3 μm

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Terahertz optical gain based on intersubband transitions in optically pumped semiconductor quantum wells: Coherent pump–probe interactions

Ansheng Liu; C. Z. Ning

Appl. Phys. Lett. 75, 1207–1209 (1999) https://doi.org/10.1063/1.124643

View articletitled, Terahertz optical gain based on intersubband transitions in optically pumped semiconductor quantum wells: Coherent pump–probe interactions

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Efficient channel-waveguide laser in Nd:GGG at 1.062 μm wavelength

R. Gerhardt; J. Kleine-Börger; L. Beilschmidt; M. Frommeyer; H. Dötsch; B. Gather

Appl. Phys. Lett. 75, 1210–1212 (1999) https://doi.org/10.1063/1.124644

View articletitled, Efficient channel-waveguide laser in Nd:GGG at 1.062 μm wavelength

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Effect of external feedback on lasing in random media

H. Cao; Y. G. Zhao; X. Liu; E. W. Seelig; R. P. H. Chang

Appl. Phys. Lett. 75, 1213–1215 (1999) https://doi.org/10.1063/1.124645

View articletitled, Effect of external feedback on lasing in random media

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PLASMAS AND ELECTRICAL DISCHARGES

Nonlinear changes in plasma and crater properties during laser ablation of Si

H. C. Liu; X. L. Mao; J. H. Yoo; R. E. Russo

Appl. Phys. Lett. 75, 1216–1218 (1999) https://doi.org/10.1063/1.124646

View articletitled, Nonlinear changes in plasma and crater properties during laser ablation of Si

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Defects in thermal oxide studied by photoluminescence spectroscopy

Hiroyuki Nishikawa; James H. Stathis; E. Cartier

Appl. Phys. Lett. 75, 1219–1221 (1999) https://doi.org/10.1063/1.124647

View articletitled, Defects in thermal oxide studied by photoluminescence spectroscopy

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Optical and structural studies of Ge nanocrystals embedded in AlN matrix fabricated by pulsed laser deposition

K. M. Hassan; A. K. Sharma; J. Narayan; J. F. Muth; C. W. Teng; R. M. Kolbas

Appl. Phys. Lett. 75, 1222–1224 (1999) https://doi.org/10.1063/1.124648

View articletitled, Optical and structural studies of Ge nanocrystals embedded in AlN matrix fabricated by pulsed laser deposition

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Optimized configuration for reflective bistable twisted nematic displays

Zhizhong Zhuang; Young Jin Kim; J. S. Patel

Appl. Phys. Lett. 75, 1225–1227 (1999) https://doi.org/10.1063/1.124649

View articletitled, Optimized configuration for reflective bistable twisted nematic displays

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Field-emission studies of smooth and nanostructured carbon films

Vladimir I. Merkulov; Douglas H. Lowndes; Larry R. Baylor

Appl. Phys. Lett. 75, 1228–1230 (1999) https://doi.org/10.1063/1.124650

View articletitled, Field-emission studies of smooth and nanostructured carbon films

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Kinetics of radiative recombination in strongly excited ZnSe/BeTe superlattices with a type-II band alignment

A. A. Maksimov; S. V. Zaitsev; I. I. Tartakovskii; V. D. Kulakovskii; D. R. Yakovlev; W. Ossau; M. Keim; G. Reuscher; A. Waag; G. Landwehr

Appl. Phys. Lett. 75, 1231–1233 (1999) https://doi.org/10.1063/1.124651

View articletitled, Kinetics of radiative recombination in strongly excited ZnSe/BeTe superlattices with a type-II band alignment

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A regime of the yield point of silicon at high temperatures

Hans Siethoff; Hans Georg Brion; Wolfgang Schröter

Appl. Phys. Lett. 75, 1234–1236 (1999) https://doi.org/10.1063/1.124652

View articletitled, A regime of the yield point of silicon at high temperatures

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Kelvin probe and scanning tunneling microscope characterization of Langmuir–Blodgett sapphyrin films

C. Goletti; A. Sgarlata; N. Motta; P. Chiaradia; R. Paolesse; A. Angelaccio; M. Drago; C. Di Natale; A. D’Amico; M. Cocco; V. I. Troitsky

Appl. Phys. Lett. 75, 1237–1239 (1999) https://doi.org/10.1063/1.124653

View articletitled, Kelvin probe and scanning tunneling microscope characterization of Langmuir–Blodgett sapphyrin films

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High spatial resolution thermal conductivity of lateral epitaxial overgrown GaN/sapphire (0001) using a scanning thermal microscope

V. M. Asnin; Fred H. Pollak; J. Ramer; M. Schurman; I. Ferguson

Appl. Phys. Lett. 75, 1240–1242 (1999) https://doi.org/10.1063/1.124654

View articletitled, High spatial resolution thermal conductivity of lateral epitaxial overgrown GaN/sapphire (0001) using a scanning thermal microscope

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

The role of potential fluctuations in continuous-wave donor–acceptor pair luminescence of heavily doped materials

I. Kuskovsky; D. Li; G. F. Neumark; V. N. Bondarev; P. V. Pikhitsa

Appl. Phys. Lett. 75, 1243–1245 (1999) https://doi.org/10.1063/1.124655

View articletitled, The role of potential fluctuations in continuous-wave donor–acceptor pair luminescence of heavily doped materials

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Ultra-high-finesse IV–VI microcavities for the midinfrared

T. Schwarzl; W. Heiß; G. Springholz

Appl. Phys. Lett. 75, 1246–1248 (1999) https://doi.org/10.1063/1.124656

View articletitled, Ultra-high-finesse IV–VI microcavities for the midinfrared

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Large coherent acoustic-phonon oscillation observed in InGaN/GaN multiple-quantum wells

Chi-Kuang Sun; Jian-Chin Liang; Christopher J. Stanton; Amber Abare; Larry Coldren; Steven P. DenBaars

Appl. Phys. Lett. 75, 1249–1251 (1999) https://doi.org/10.1063/1.124657

View articletitled, Large coherent acoustic-phonon oscillation observed in InGaN/GaN multiple-quantum wells

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Electro-optic recovery of the photoquenching effect

R. M. Rubinger; A.G. de Oliveira; G. M. Ribeiro; J. C. Bezzera; M. V. B. Moreira; H. Chacham

Appl. Phys. Lett. 75, 1252–1254 (1999) https://doi.org/10.1063/1.124658

View articletitled, Electro-optic recovery of the photoquenching effect

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Observation of critical gate oxide thickness for substrate-defect related oxide failure

Twan Bearda; Michel Houssa; Paul W. Mertens; Jan Vanhellemont; Marc Heyns

Appl. Phys. Lett. 75, 1255–1257 (1999) https://doi.org/10.1063/1.124659

View articletitled, Observation of critical gate oxide thickness for substrate-defect related oxide failure

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Cooling of a semiconductor by luminescence up-conversion

E. Finkeißen; M. Potemski; P. Wyder; L. Viña; G. Weimann

Appl. Phys. Lett. 75, 1258–1260 (1999) https://doi.org/10.1063/1.124660

View articletitled, Cooling of a semiconductor by luminescence up-conversion

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Characteristics of dielectric layers grown on Ge by low temperature vacuum ultraviolet-assisted oxidation

Valentin Craciun; Ian W. Boyd; Bernie Hutton; David Williams

Appl. Phys. Lett. 75, 1261–1263 (1999) https://doi.org/10.1063/1.124661

View articletitled, Characteristics of dielectric layers grown on Ge by low temperature vacuum ultraviolet-assisted oxidation

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A method of highly efficient hydrolyzation oxidation of III–V semiconductor lattice matched to indium phosphide

B. Koley; F. G. Johnson; O. King; S. S. Saini; M. Dagenais

Appl. Phys. Lett. 75, 1264–1266 (1999) https://doi.org/10.1063/1.124662

View articletitled, A method of highly efficient hydrolyzation oxidation of III–V semiconductor lattice matched to indium phosphide

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Long wavelength (1.3 and 1.5 μm) photoluminescence from InGaAs/GaPAsSb quantum wells grown on GaAs

P. Dowd; W. Braun; David J. Smith; C. M. Ryu; C.-Z. Guo; S. L. Chen; U. Koelle; S. R. Johnson; Y.-H. Zhang

Appl. Phys. Lett. 75, 1267–1269 (1999) https://doi.org/10.1063/1.124663

View articletitled, Long wavelength (1.3 and 1.5 μm) photoluminescence from InGaAs/GaPAsSb quantum wells grown on GaAs

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Effects of cobalt silicidation and postannealing on void defects at the sidewall spacer edge of metal–oxide–silicon field-effect transistors

Yeong-Cheol Kim; Jongchae Kim; Jun-Ho Choy; Ju-Chul Park; Hong-Min Choi

Appl. Phys. Lett. 75, 1270–1272 (1999) https://doi.org/10.1063/1.124664

View articletitled, Effects of cobalt silicidation and postannealing on void defects at the sidewall spacer edge of metal–oxide–silicon field-effect transistors

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Temperature-dependent morphology of three-dimensional InAs islands grown on silicon

P. C. Sharma; K. W. Alt; D. Y. Yeh; K. L. Wang

Appl. Phys. Lett. 75, 1273–1275 (1999) https://doi.org/10.1063/1.124665

View articletitled, Temperature-dependent morphology of three-dimensional InAs islands grown on silicon

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GaN homoepitaxial layers grown by metalorganic chemical vapor deposition

M. Leszczynski; B. Beaumont; E. Frayssinet; W. Knap; P. Prystawko; T. Suski; I. Grzegory; S. Porowski

Appl. Phys. Lett. 75, 1276–1278 (1999) https://doi.org/10.1063/1.124666

View articletitled, GaN homoepitaxial layers grown by metalorganic chemical vapor deposition

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Interstitial-type defects away from the projected ion range in high energy ion implanted and annealed silicon

R. Kögler; A. Peeva; W. Anwand; G. Brauer; W. Skorupa; P. Werner; U. Gösele

Appl. Phys. Lett. 75, 1279–1281 (1999) https://doi.org/10.1063/1.124667

View articletitled, Interstitial-type defects away from the projected ion range in high energy ion implanted and annealed silicon

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Ion beam synthesized ${Ru}_{2} {Si}_{3}$

J. S. Sharpe; Y. L. Chen; R. M. Gwilliam; A. K. Kewell; C. N. McKinty; M. A. Lourenço; G. Shao; K. P. Homewood; Karen Reeson Kirkby

Appl. Phys. Lett. 75, 1282–1283 (1999) https://doi.org/10.1063/1.124668

View articletitled, Ion beam synthesized <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ru</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span>

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Analysis of the improved contact resistance in metal- $p^{+}$ silicon Schottky barriers using the ${BF}_{2} /B$ mixed implantation

Jung-Ho Lee; In-Seok Yeo; Jeong-Youb Lee; Sahng-Kyoo Lee

Appl. Phys. Lett. 75, 1284–1286 (1999) https://doi.org/10.1063/1.124669

View articletitled, Analysis of the improved contact resistance in metal-<span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi>p</mi><mrow><mi>+</mi></mrow></msup></math></span> silicon Schottky barriers using the <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BF</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">/B</mi></math></span> mixed implantation

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Raman imaging of stress in a SiGe/Si photoelastic optical channel waveguide structure

H. Rho; Howard E. Jackson; B. L. Weiss

Appl. Phys. Lett. 75, 1287–1289 (1999) https://doi.org/10.1063/1.124670

View articletitled, Raman imaging of stress in a SiGe/Si photoelastic optical channel waveguide structure

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MAGNETISM AND SUPERCONDUCTIVITY

Temperature dependence of the reversal mechanism in spin-valve films

X. Portier; A. K. Petford-Long; T. C. Anthony; J. A. Brug

Appl. Phys. Lett. 75, 1290–1292 (1999) https://doi.org/10.1063/1.124671

View articletitled, Temperature dependence of the reversal mechanism in spin-valve films

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Design and performance of a space based high temperature superconductivity experiment

E. Polturak; G. Koren; M. Ayalon; I. Flohr; R. Waller; M. Guelman

Appl. Phys. Lett. 75, 1293–1295 (1999) https://doi.org/10.1063/1.124672

View articletitled, Design and performance of a space based high temperature superconductivity experiment

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Magnetic composite materials obtained by swift heavy-ion irradiation of yttrium iron garnet ceramics

A. Fnidiki; J. Juraszek; J. Teillet; F. Studer

Appl. Phys. Lett. 75, 1296–1298 (1999) https://doi.org/10.1063/1.124673

View articletitled, Magnetic composite materials obtained by swift heavy-ion irradiation of yttrium iron garnet ceramics

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DIELECTRICS AND FERROELECTRICITY

Accommodation of excess Ti in a ${(Ba, Sr)TiO}_{3}$ thin film with 53.4% Ti grown on ${Pt/SiO}_{2} /Si$ by metalorganic chemical-vapor deposition

I. Levin; R. D. Leapman; D. L. Kaiser; P. C. van Buskirk; S. Bilodeau; R. Carl

Appl. Phys. Lett. 75, 1299–1301 (1999) https://doi.org/10.1063/1.124674

View articletitled, Accommodation of excess Ti in a <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">(Ba, Sr)TiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span> thin film with 53.4% Ti grown on <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pt/SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">/Si</mi></math></span> by metalorganic chemical-vapor deposition

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DEVICE PHYSICS

Resonant-tunneling diodes with emitter prewells

Timothy B. Boykin; R. Chris Bowen; Gerhard Klimeck; Kevin L. Lear

Appl. Phys. Lett. 75, 1302–1304 (1999) https://doi.org/10.1063/1.124675

View articletitled, Resonant-tunneling diodes with emitter prewells

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High-quantum-efficiency 0.5 eV GaInAsSb/GaSb thermophotovoltaic devices

C. A. Wang; H. K. Choi; S. L. Ransom; G. W. Charache; L. R. Danielson; D. M. DePoy

Appl. Phys. Lett. 75, 1305–1307 (1999) https://doi.org/10.1063/1.124676

View articletitled, High-quantum-efficiency 0.5 eV GaInAsSb/GaSb thermophotovoltaic devices

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Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy

Phillip E. Thompson; Karl D. Hobart; Mark E. Twigg; Glenn G. Jernigan; Thomas E. Dillon; Sean L. Rommel; Paul R. Berger; David S. Simons; Peter H. Chi; Roger Lake; Alan C. Seabaugh

Appl. Phys. Lett. 75, 1308–1310 (1999) https://doi.org/10.1063/1.124677

View articletitled, Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy

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The reduction of base dopant outdiffusion in SiGe heterojunction bipolar transistors by carbon doping

A. Gruhle; H. Kibbel; U. König

Appl. Phys. Lett. 75, 1311–1313 (1999) https://doi.org/10.1063/1.124678

View articletitled, The reduction of base dopant outdiffusion in SiGe heterojunction bipolar transistors by carbon doping

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Parallel nanodevice fabrication using a combination of shadow mask and scanning probe methods

Roli Lüthi; Reto R. Schlittler; Jürgen Brugger; Peter Vettiger; Mark E. Welland; James K. Gimzewski

Appl. Phys. Lett. 75, 1314–1316 (1999) https://doi.org/10.1063/1.124679

View articletitled, Parallel nanodevice fabrication using a combination of shadow mask and scanning probe methods

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INTERDISCIPLINARY AND GENERAL PHYSICS

Correlation between nano-scale friction and wear of boron carbide films deposited by dc-magnetron sputtering

R. Prioli; D. C. Reigada; F. L. Freire, Jr.

Appl. Phys. Lett. 75, 1317–1319 (1999) https://doi.org/10.1063/1.124687

View articletitled, Correlation between nano-scale friction and wear of boron carbide films deposited by dc-magnetron sputtering

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Rotating-mode content of gyrotron output

G. F. Brand

Appl. Phys. Lett. 75, 1320–1322 (1999) https://doi.org/10.1063/1.124680

View articletitled, Rotating-mode content of gyrotron output

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Observation of a non Fowler–Nordheim field-induced electron emission phenomenon from chemical vapor deposited diamond films

J. Chen; S. Z. Deng; N. S. Xu; K. H. Wu; E. G. Wang

Appl. Phys. Lett. 75, 1323–1325 (1999) https://doi.org/10.1063/1.124681

View articletitled, Observation of a non Fowler–Nordheim field-induced electron emission phenomenon from chemical vapor deposited diamond films

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Charge storage in ${CeO}_{2} {/Si/CeO}_{2} /Si(111)$ structures by electrostatic force microscopy

J. T. Jones; P. M. Bridger; O. J. Marsh; T. C. McGill

Appl. Phys. Lett. 75, 1326–1328 (1999) https://doi.org/10.1063/1.124682

View articletitled, Charge storage in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CeO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">/Si/CeO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">/Si(111)</mi></math></span> structures by electrostatic force microscopy

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Nanotube composite carbon fibers

R. Andrews; D. Jacques; A. M. Rao; T. Rantell; F. Derbyshire; Y. Chen; J. Chen; R. C. Haddon

Appl. Phys. Lett. 75, 1329–1331 (1999) https://doi.org/10.1063/1.124683

View articletitled, Nanotube composite carbon fibers

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Realization of an axially aligned Au-ion source of atomic size

S. T. Purcell; Vu Thien Binh

Appl. Phys. Lett. 75, 1332–1334 (1999) https://doi.org/10.1063/1.124684

View articletitled, Realization of an axially aligned Au-ion source of atomic size

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Discrimination between nuclear recoils and electron recoils by simultaneous detection of phonons and scintillation light

P. Meunier; M. Bravin; M. Bruckmayer; S. Giordano; M. Loidl; O. Meier; F. Pröbst; W. Seidel; M. Sisti; L. Stodolsky; S. Uchaikin; L. Zerle

Appl. Phys. Lett. 75, 1335–1337 (1999) https://doi.org/10.1063/1.124685

View articletitled, Discrimination between nuclear recoils and electron recoils by simultaneous detection of phonons and scintillation light

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