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Volume 75, Issue 5

2 August 1999

Applied Physics Letters Cover Image for Volume 75, Issue 5

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
PLASMAS AND ELECTRICAL DISCHARGES
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
DEVICE PHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS

LASERS, OPTICS, AND OPTOELECTRONICS

High-speed, optically controlled surface-normal optical switch based on diffusive conduction

M. B. Yairi; C. W. Coldren; D. A. B. Miller; J. S. Harris, Jr.

Appl. Phys. Lett. 75, 597–599 (1999) https://doi.org/10.1063/1.124452

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Multiple distributed feedback operation at 1.55 μm with uniform output powers in a single laser diode

A. Talneau; J. Charil; A. Ougazzaden

Appl. Phys. Lett. 75, 600–602 (1999) https://doi.org/10.1063/1.124453

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Microwave near-field polarimetry

A. F. Lann; M. Golosovsky; D. Davidov; A. Frenkel

Appl. Phys. Lett. 75, 603–605 (1999) https://doi.org/10.1063/1.124454

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Dynamical diffraction in metallic optical gratings

M. M. J. Treacy

Appl. Phys. Lett. 75, 606–608 (1999) https://doi.org/10.1063/1.124455

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PLASMAS AND ELECTRICAL DISCHARGES

Positive ions as growth precursors in plasma enhanced chemical vapor deposition of hydrogenated amorphous silicon

E. A. G. Hamers; J. Bezemer; W. F. van der Weg

Appl. Phys. Lett. 75, 609–611 (1999) https://doi.org/10.1063/1.124456

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Temporal development of the plasma composition of a pulsed aluminum plasma stream in the presence of oxygen

Jochen M. Schneider; André Anders; Ian G. Brown; Björgvin Hjörvarsson; Lars Hultman

Appl. Phys. Lett. 75, 612–614 (1999) https://doi.org/10.1063/1.124457

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Nitridation of GaP(001) surface by electron cyclotron resonance assisted $N_{2}$ plasma

Tamotsu Hashizume

Appl. Phys. Lett. 75, 615–617 (1999) https://doi.org/10.1063/1.124458

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Second-harmonic generation in silicon carbide polytypes

S. Niedermeier; H. Schillinger; R. Sauerbrey; B. Adolph; F. Bechstedt

Appl. Phys. Lett. 75, 618–620 (1999) https://doi.org/10.1063/1.124459

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Effect of polyvinylcarbazole barrier layer on charge storage in amorphous selenium films

Suresh Chand; G. D. Sharma; S. Dwivedi

Appl. Phys. Lett. 75, 621–623 (1999) https://doi.org/10.1063/1.124460

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Placement of conjugated oligomers in an alkanethiol matrix by scanned probe microscope lithography

J. Chen; M. A. Reed; C. L. Asplund; A. M. Cassell; M. L. Myrick; A. M. Rawlett; J. M. Tour; P. G. Van Patten

Appl. Phys. Lett. 75, 624–626 (1999) https://doi.org/10.1063/1.124461

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Integrated nanotube circuits: Controlled growth and ohmic contacting of single-walled carbon nanotubes

Hyongsok T. Soh; Calvin F. Quate; Alberto F. Morpurgo; Charles M. Marcus; Jing Kong; Hongjie Dai

Appl. Phys. Lett. 75, 627–629 (1999) https://doi.org/10.1063/1.124462

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${TiN}_{x}$ films with metallic behavior at high N/Ti ratios for better solar control windows

G. B. Smith; P. D. Swift; A. Bendavid

Appl. Phys. Lett. 75, 630–632 (1999) https://doi.org/10.1063/1.124463

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Void nucleation on intentionally added defects in Al interconnects

J. C. Doan; S.-H. Lee; J. C. Bravman; P. A. Flinn; T. N. Marieb

Appl. Phys. Lett. 75, 633–635 (1999) https://doi.org/10.1063/1.124464

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Fiber-like lanthanum tungstate crystal for efficient stimulated Raman scattering

Yoshiharu Urata; Satoshi Wada; Hideo Tashiro; Tsuguo Fukuda

Appl. Phys. Lett. 75, 636–638 (1999) https://doi.org/10.1063/1.124465

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X-ray standing waves effects for a multilayer mirror modulated by surface acoustic waves

D. V. Roshchupkin; R. Tucoulou; M. Brunel

Appl. Phys. Lett. 75, 639–640 (1999) https://doi.org/10.1063/1.124466

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Silicon nanocrystallites in buried ${SiO}_{x}$ layers via direct wafer bonding

U. Kahler; H. Hofmeister

Appl. Phys. Lett. 75, 641–643 (1999) https://doi.org/10.1063/1.124467

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Vibrational properties of tetrahedral amorphous carbon from first principles

Francesco Mauri; Andrea Dal Corso

Appl. Phys. Lett. 75, 644–646 (1999) https://doi.org/10.1063/1.124468

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Optimization of erbium-doped light-emitting diodes by p-type counterdoping

E. Neufeld; M. Markmann; A. Vörckel; K. Brunner; G. Abstreiter

Appl. Phys. Lett. 75, 647–649 (1999) https://doi.org/10.1063/1.124469

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A $(2 \sqrt{3} ×2 \sqrt{13})$ surface phase in the 6H–SiC(0001) surface studied by scanning tunneling microscopy

M. Naitoh; J. Takami; S. Nishigaki; N. Toyama

Appl. Phys. Lett. 75, 650–652 (1999) https://doi.org/10.1063/1.124470

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Micromechanical properties of silica aerogels

M. Moner-Girona; A. Roig; E. Molins; E. Martı́nez; J. Esteve

Appl. Phys. Lett. 75, 653–655 (1999) https://doi.org/10.1063/1.124471

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Temperature characteristics of threshold currents of columnar-shaped self-assembled $InGaAs/GaAs$ quantum-dot lasers: Influence of nonradiative recombination centers

Mitsuru Sugawara; Kohki Mukai; Yoshiaki Nakata

Appl. Phys. Lett. 75, 656–658 (1999) https://doi.org/10.1063/1.124472

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Localized vibrational modes of carbon-hydrogen complexes in GaN

M. O. Manasreh; J. M. Baranowski; K. Pakula; H. X. Jiang; Jingyu Lin

Appl. Phys. Lett. 75, 659–661 (1999) https://doi.org/10.1063/1.124473

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Activation and deactivation of implanted B in Si

Lourdes Pelaz; V. C. Venezia; H.-J. Gossmann; G. H. Gilmer; A. T. Fiory; C. S. Rafferty; M. Jaraiz; J. Barbolla

Appl. Phys. Lett. 75, 662–664 (1999) https://doi.org/10.1063/1.124474

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Demonstration of high-performance 10.16 μm quantum cascade distributed feedback lasers fabricated without epitaxial regrowth

Daniel Hofstetter; Jérôme Faist; Mattias Beck; Antoine Müller; Ursula Oesterle

Appl. Phys. Lett. 75, 665–667 (1999) https://doi.org/10.1063/1.124475

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High-resistance buried layers by MeV Fe implantation in n-type InP

A. Gasparotto; A. Carnera; A. Paccagnella; B. Fraboni; F. Priolo; E. Gombia; R. Mosca

Appl. Phys. Lett. 75, 668–670 (1999) https://doi.org/10.1063/1.124476

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Multiple gated InAs dot ensembles

D. G. Austing; S. Tarucha; P. C. Main; M. Henini; S. T. Stoddart; L. Eaves

Appl. Phys. Lett. 75, 671–673 (1999) https://doi.org/10.1063/1.124477

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Analysis of the polar direction of GaN film growth by coaxial impact collision ion scattering spectroscopy

M. Sumiya; M. Tanaka; K. Ohtsuka; S. Fuke; T. Ohnishi; I. Ohkubo; M. Yoshimoto; H. Koinuma; M. Kawasaki

Appl. Phys. Lett. 75, 674–676 (1999) https://doi.org/10.1063/1.124478

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Hydrogen cleaning and smoothing of semiconductor surfaces: The case of II–VI compounds

E. Picard; P. Gentile; D. Martrou; N. Magnea

Appl. Phys. Lett. 75, 677–679 (1999) https://doi.org/10.1063/1.124479

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Incorporation of N into ${Si/SiO}_{2}$ interfaces: Molecular orbital calculations to evaluate interface strain and heat of reaction

Jiro Ushio; Takuya Maruizumi; Masanobu Miyao

Appl. Phys. Lett. 75, 680–682 (1999) https://doi.org/10.1063/1.124480

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A phosphorous-rich structure of InP (001) produced by metalorganic vapor-phase epitaxy

L. Li; B.-K. Han; D. Law; C. H. Li; Q. Fu; R. F. Hicks

Appl. Phys. Lett. 75, 683–685 (1999) https://doi.org/10.1063/1.124481

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Nucleation layer microstructure, grain size, and electrical properties in GaN grown on a-plane sapphire

M. E. Twigg; R. L. Henry; A. E. Wickenden; D. D. Koleske; J. C. Culbertson

Appl. Phys. Lett. 75, 686–688 (1999) https://doi.org/10.1063/1.124482

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Evaluation of strain and In content in $(InGaN/GaN)$ multiquantum wells by x-ray analysis

A. Krost; J. Bläsing; M. Lünenbürger; H. Protzmann; M. Heuken

Appl. Phys. Lett. 75, 689–691 (1999) https://doi.org/10.1063/1.124483

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Spatially distributed $p-n$ heterojunction based on nanoporous ${TiO}_{2}$ and CuSCN

C. Rost; I. Sieber; S. Siebentritt; M. C. Lux-Steiner; R. Könenkamp

Appl. Phys. Lett. 75, 692–694 (1999) https://doi.org/10.1063/1.124484

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MAGNETISM AND SUPERCONDUCTIVITY

Spin-interference device

Junsaku Nitta; Frank E. Meijer; Hideaki Takayanagi

Appl. Phys. Lett. 75, 695–697 (1999) https://doi.org/10.1063/1.124485

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Radio-frequency amplifier with tenth-kelvin noise temperature based on a microstrip direct current superconducting quantum interference device

Marc-Olivier André; Michael Mück; John Clarke; Jost Gail; Christoph Heiden

Appl. Phys. Lett. 75, 698–700 (1999) https://doi.org/10.1063/1.124486

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Interface and tunneling barrier heights of NbN/AlN/NbN tunnel junctions

Zhen Wang; Hirotaka Terai; Akira Kawakami; Yoshinori Uzawa

Appl. Phys. Lett. 75, 701–703 (1999) https://doi.org/10.1063/1.124487

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Nonlinear electron transport in magnetic multilayers

F. G. Aliev; R. Schad; P. Lobotka; I. Vavra; E. Seynaeve; V. V. Moshchalkov; Y. Bruynseraede

Appl. Phys. Lett. 75, 704–706 (1999) https://doi.org/10.1063/1.124488

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Enhanced coercivity of exchange-bias Fe/MnPd bilayers

Y. J. Tang; B. Roos; T. Mewes; S. O. Demokritov; B. Hillebrands; Y. J. Wang

Appl. Phys. Lett. 75, 707–709 (1999) https://doi.org/10.1063/1.124489

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Blocking temperature, energy barrier, and reversal field variation of fine magnetic particles

Huei Li Huang; Jing Ju Lu

Appl. Phys. Lett. 75, 710–712 (1999) https://doi.org/10.1063/1.124490

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Influence of strain on the magnetic properties of epitaxial (100) chromium dioxide $({CrO}_{2})$ films

X. W. Li; A. Gupta; Giang Xiao

Appl. Phys. Lett. 75, 713–715 (1999) https://doi.org/10.1063/1.124491

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DIELECTRICS AND FERROELECTRICITY

Can lead nonstoichiometry influence ferroelectric properties of ${Pb(Zr,Ti)O}_{3}$ thin films?

S. Aggarwal; S. Madhukar; B. Nagaraj; I. G. Jenkins; R. Ramesh; L. Boyer; J. T. Evans, Jr.

Appl. Phys. Lett. 75, 716–718 (1999) https://doi.org/10.1063/1.124492

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Ferroelectricity of YMn $O_{3}$ thin films prepared via solution

Hiroya Kitahata; Kiyoharu Tadanaga; Tsutomu Minami; Norifumi Fujimura; Taichiro Ito

Appl. Phys. Lett. 75, 719–721 (1999) https://doi.org/10.1063/1.124493

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Metal/ferroelectric/insulator/semiconductor structure of ${Pt/SrBi}_{2} {Ta}_{2} O_{9} {/YMnO}_{3} /Si$ using ${YMnO}_{3}$ as the buffer layer

Kyu-Jeong Choi; Woong-Chul Shin; Jung-Hwan Yang; Soon-Gil Yoon

Appl. Phys. Lett. 75, 722–724 (1999) https://doi.org/10.1063/1.124255

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Low-temperature anodic oxidation of silicon using a wave resonance plasma source

S. Uchikoga; D. F. Lai; J. Robertson; W. I. Milne; N. Hatzopoulos; R. A. Yankov; M. Weiler

Appl. Phys. Lett. 75, 725–727 (1999) https://doi.org/10.1063/1.124494

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DEVICE PHYSICS

Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation

Leif Roschier; Jari Penttilä; Michel Martin; Pertti Hakonen; Mikko Paalanen; Unto Tapper; Esko I. Kauppinen; Catherine Journet; Patrick Bernier

Appl. Phys. Lett. 75, 728–730 (1999) https://doi.org/10.1063/1.124495

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A monolithic field-effect-transistor-amplified magnetic field sensor

D. M. Schaadt; E. T. Yu; S. Sankar; A. E. Berkowitz

Appl. Phys. Lett. 75, 731–733 (1999) https://doi.org/10.1063/1.124496

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Transient effects of positive oxide charge on stress-induced leakage current in tunnel oxides

Nian-Kai Zous; Tahui Wang; Chih-Chich Yeh; C. W. Tsai; Chimoon Huang

Appl. Phys. Lett. 75, 734–736 (1999) https://doi.org/10.1063/1.124497

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INTERDISCIPLINARY AND GENERAL PHYSICS

Optically-induced growth of fiber patterns into a photopolymerizable resin

Satoru Shoji; Satoshi Kawata

Appl. Phys. Lett. 75, 737–739 (1999) https://doi.org/10.1063/1.124498

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