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Volume 75, Issue 19

8 November 1999

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
DEVICE PHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS
ERRATA

LASERS, OPTICS, AND OPTOELECTRONICS

Isotropic polarization modulational instability and domain walls in spun fibers

P. Kockaert; M. Haelterman; S. Pitois; G. Millot

Appl. Phys. Lett. 75, 2873–2875 (1999) https://doi.org/10.1063/1.125175

View articletitled, Isotropic polarization modulational instability and domain walls in spun fibers

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High-efficiency midinfrared “W” laser with optical pumping injection cavity

C. L. Felix; W. W. Bewley; I. Vurgaftman; L. J. Olafsen; D. W. Stokes; J. R. Meyer; M. J. Yang

Appl. Phys. Lett. 75, 2876–2878 (1999) https://doi.org/10.1063/1.125176

View articletitled, High-efficiency midinfrared “W” laser with optical pumping injection cavity

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Effect of indium doping on the transient optical properties of GaN films

Hidekazu Kumano; Ken-ichi Hoshi; Satoru Tanaka; Ikuo Suemune; Xu-Qiang Shen; Philippe Riblet; Peter Ramvall; Yoshinobu Aoyagi

Appl. Phys. Lett. 75, 2879–2881 (1999) https://doi.org/10.1063/1.125178

View articletitled, Effect of indium doping on the transient optical properties of GaN films

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Actively mode-locked $p- Ge$ laser in Faraday configuration

A. V. Muravjov; S. H. Withers; R. C. Strijbos; S. G. Pavlov; V. N. Shastin; R. E. Peale

Appl. Phys. Lett. 75, 2882–2884 (1999) https://doi.org/10.1063/1.125179

View articletitled, Actively mode-locked <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p-</mi><mi mathvariant="normal" xmlns="">Ge</mi></math></span> laser in Faraday configuration

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Fiber-optic oxygen sensor using molybdenum chloride cluster luminescence

Ruby N. Ghosh; Gregory L. Baker; Cory Ruud; Daniel G. Nocera

Appl. Phys. Lett. 75, 2885–2887 (1999) https://doi.org/10.1063/1.125180

View articletitled, Fiber-optic oxygen sensor using molybdenum chloride cluster luminescence

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Strong nonlinear optical response in epitaxial liftoff single-crystal ${LiNbO}_{3}$ films

A. M. Radojevic; M. Levy; H. Kwak; R. M. Osgood, Jr.

Appl. Phys. Lett. 75, 2888–2890 (1999) https://doi.org/10.1063/1.125397

View articletitled, Strong nonlinear optical response in epitaxial liftoff single-crystal <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LiNbO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span> films

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Laser gain and threshold properties in compressive-strained and lattice-matched GaInNAs/GaAs quantum wells

W. W. Chow; E. D. Jones; N. A. Modine; A. A. Allerman; S. R. Kurtz

Appl. Phys. Lett. 75, 2891–2893 (1999) https://doi.org/10.1063/1.125181

View articletitled, Laser gain and threshold properties in compressive-strained and lattice-matched GaInNAs/GaAs quantum wells

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

The mechanism for the high-quality single-phase growth of MnSi films on Si (111) in the presence of Sb flux

Y. Yan; M. M. Al-Jassim; K. Matsuda; H. Tatsuoka; H. Kuwabara; S. J. Pennycook

Appl. Phys. Lett. 75, 2894–2896 (1999) https://doi.org/10.1063/1.125182

View articletitled, The mechanism for the high-quality single-phase growth of MnSi films on Si (111) in the presence of Sb flux

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Infrared extinction properties of gold nanoshells

S. J. Oldenburg; J. B. Jackson; S. L. Westcott; N. J. Halas

Appl. Phys. Lett. 75, 2897–2899 (1999) https://doi.org/10.1063/1.125183

View articletitled, Infrared extinction properties of gold nanoshells

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Investigation of the mechanism of titanium silicide reaction using ion-beam-assisted deposition

Jaeho Chang; Gi Bum Kim; Dong-Soo Yoon; Hong Koo Baik; Do-Joon Yoo; Sung-Man Lee

Appl. Phys. Lett. 75, 2900–2902 (1999) https://doi.org/10.1063/1.125184

View articletitled, Investigation of the mechanism of titanium silicide reaction using ion-beam-assisted deposition

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Epitaxial crystallization of amorphous ${SiO}_{2}$ films deposited on single-crystalline α-quartz

F. Roccaforte; S. Dhar; F. Harbsmeier; K. P. Lieb

Appl. Phys. Lett. 75, 2903–2905 (1999) https://doi.org/10.1063/1.125185

View articletitled, Epitaxial crystallization of amorphous <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math></span> films deposited on single-crystalline α-quartz

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Tunable superstructures in hydrothermally etched iron-passivated porous silicon

Xin Jian Li; Xing Hu; Yu Jia; Yu Heng Zhang

Appl. Phys. Lett. 75, 2906–2908 (1999) https://doi.org/10.1063/1.125186

View articletitled, Tunable superstructures in hydrothermally etched iron-passivated porous silicon

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High-quality Ge epilayers on Si with low threading-dislocation densities

Hsin-Chiao Luan; Desmond R. Lim; Kevin K. Lee; Kevin M. Chen; Jessica G. Sandland; Kazumi Wada; Lionel C. Kimerling

Appl. Phys. Lett. 75, 2909–2911 (1999) https://doi.org/10.1063/1.125187

View articletitled, High-quality Ge epilayers on Si with low threading-dislocation densities

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Holotomography: Quantitative phase tomography with micrometer resolution using hard synchrotron radiation x rays

P. Cloetens; W. Ludwig; J. Baruchel; D. Van Dyck; J. Van Landuyt; J. P. Guigay; M. Schlenker

Appl. Phys. Lett. 75, 2912–2914 (1999) https://doi.org/10.1063/1.125225

View articletitled, Holotomography: Quantitative phase tomography with micrometer resolution using hard synchrotron radiation x rays

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Real-time electron-ion dynamics for photoinduced reactivation of hydrogen-passivated donors in GaAs

Yoshiyuki Miyamoto; Osamu Sugino; Yasunori Mochizuki

Appl. Phys. Lett. 75, 2915–2917 (1999) https://doi.org/10.1063/1.125188

View articletitled, Real-time electron-ion dynamics for photoinduced reactivation of hydrogen-passivated donors in GaAs

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Field-emission characteristics of SiC nanowires prepared by chemical-vapor deposition

K. W. Wong; X. T. Zhou; Frederick C. K. Au; H. L. Lai; C. S. Lee; S. T. Lee

Appl. Phys. Lett. 75, 2918–2920 (1999) https://doi.org/10.1063/1.125189

View articletitled, Field-emission characteristics of SiC nanowires prepared by chemical-vapor deposition

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Synthesis and characterization of amorphous carbon nanowires

Y. H. Tang; N. Wang; Y. F. Zhang; C. S. Lee; I. Bello; S. T. Lee

Appl. Phys. Lett. 75, 2921–2923 (1999) https://doi.org/10.1063/1.125190

View articletitled, Synthesis and characterization of amorphous carbon nanowires

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Structural relationship of polycrystalline cobalt silicide lines to (001) silicon substrate

A. Alberti; F. La Via; C. Spinella; E. Rimini

Appl. Phys. Lett. 75, 2924–2926 (1999) https://doi.org/10.1063/1.125191

View articletitled, Structural relationship of polycrystalline cobalt silicide lines to (001) silicon substrate

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Narrow-linewidth terahertz intersubband emission from three-level systems

Benjamin S. Williams; Bin Xu; Qing Hu; Michael R. Melloch

Appl. Phys. Lett. 75, 2927–2929 (1999) https://doi.org/10.1063/1.125192

View articletitled, Narrow-linewidth terahertz intersubband emission from three-level systems

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Hot-electron far-infrared intrasubband absorption and emission in quantum wells

E. Towe; L. E. Vorobjev; S. N. Danilov; Yu. V. Kochegarov; D. A. Firsov; D. V. Donetsky

Appl. Phys. Lett. 75, 2930–2932 (1999) https://doi.org/10.1063/1.124637

View articletitled, Hot-electron far-infrared intrasubband absorption and emission in quantum wells

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Single quantum dot states measured by optical modulation spectroscopy

N. H. Bonadeo; A. S. Lenihan; Gang Chen; J. R. Guest; D. G. Steel; D. Gammon; D. S. Katzer; D. Park

Appl. Phys. Lett. 75, 2933–2935 (1999) https://doi.org/10.1063/1.125177

View articletitled, Single quantum dot states measured by optical modulation spectroscopy

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In situ resistance measurements of strained carbon nanotubes

S. Paulson; M. R. Falvo; N. Snider; A. Helser; T. Hudson; A. Seeger; R. M. Taylor; R. Superfine; S. Washburn

Appl. Phys. Lett. 75, 2936–2938 (1999) https://doi.org/10.1063/1.125193

View articletitled, <em>In situ</em> resistance measurements of strained carbon nanotubes

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Oxygen diffusion into ${SiO}_{2}$ -capped GaN during annealing

S. J. Pearton; H. Cho; J. R. LaRoche; F. Ren; R. G. Wilson; J. W. Lee

Appl. Phys. Lett. 75, 2939–2941 (1999) https://doi.org/10.1063/1.125194

View articletitled, Oxygen diffusion into <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math></span>-capped GaN during annealing

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Properties of two-dimensional electron gas containing self-organized quantum antidots

Yu. Vasilyev; S. Suchalkin; M. Zundel; D. Heisenberg; K. Eberl; K. von Klitzing

Appl. Phys. Lett. 75, 2942–2944 (1999) https://doi.org/10.1063/1.125195

View articletitled, Properties of two-dimensional electron gas containing self-organized quantum antidots

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Localization of the Si–H stretch vibration in amorphous silicon

C. W. Rella; M. van der Voort; A. V. Akimov; A. F. G. van der Meer; J. I. Dijkhuis

Appl. Phys. Lett. 75, 2945–2947 (1999) https://doi.org/10.1063/1.125196

View articletitled, Localization of the Si–H stretch vibration in amorphous silicon

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Role of ${Si}_{1−x} {Ge}_{x}$ buffer layer on mobility enhancement in a strained-Si $n$ -channel metal–oxide–semiconductor field-effect transistor

Nobuyuki Sugii; Kiyokazu Nakagawa; Shinya Yamaguchi; Masanobu Miyao

Appl. Phys. Lett. 75, 2948–2950 (1999) https://doi.org/10.1063/1.125197

View articletitled, Role of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi>x</mi></mrow></msub></math></span> buffer layer on mobility enhancement in a strained-Si <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n</mi></math></span>-channel metal–oxide–semiconductor field-effect transistor

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Arsenic clusters on the surface of vertically aligned InAs islands on GaAs substrate by annealing

T. W. Fan; Q. W. Mo; F. Lin; Z. G. Wang; W. Zhang

Appl. Phys. Lett. 75, 2951–2953 (1999) https://doi.org/10.1063/1.125198

View articletitled, Arsenic clusters on the surface of vertically aligned InAs islands on GaAs substrate by annealing

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Low-temperature homoepitaxial growth on high-miscut Si(111) mediated by thin overlayers of Pb

Li-Chung Wei; Ching-shen Su

Appl. Phys. Lett. 75, 2954–2956 (1999) https://doi.org/10.1063/1.125199

View articletitled, Low-temperature homoepitaxial growth on high-miscut Si(111) mediated by thin overlayers of Pb

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In enrichment in (In,Ga)As/GaAs quantum dots studied by high-resolution x-ray diffraction and pole figure analysis

A. Krost; J. Bläsing; F. Heinrichsdorff; D. Bimberg

Appl. Phys. Lett. 75, 2957–2959 (1999) https://doi.org/10.1063/1.125200

View articletitled, In enrichment in (In,Ga)As/GaAs quantum dots studied by high-resolution x-ray diffraction and pole figure analysis

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Improvement of far-field pattern in nitride laser diodes

T. Takeuchi; T. Detchprohm; M. Iwaya; N. Hayashi; K. Isomura; K. Kimura; M. Yamaguchi; H. Amano; I. Akasaki; Yw. Kaneko; R. Shioda; S. Watanabe; T. Hidaka; Y. Yamaoka; Ys. Kaneko; N. Yamada

Appl. Phys. Lett. 75, 2960–2962 (1999) https://doi.org/10.1063/1.125201

View articletitled, Improvement of far-field pattern in nitride laser diodes

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The effect of an electric-field gradient on avalanche noise

S. A. Plimmer; C. H. Tan; J. P. R. David; R. Grey; K. F. Li; G. J. Rees

Appl. Phys. Lett. 75, 2963–2965 (1999) https://doi.org/10.1063/1.125202

View articletitled, The effect of an electric-field gradient on avalanche noise

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Hole trapping due to anode hole injection in thin tunnel gate oxides in memory devices under Fowler–Nordheim stress

Piyas Samanta

Appl. Phys. Lett. 75, 2966–2968 (1999) https://doi.org/10.1063/1.125203

View articletitled, Hole trapping due to anode hole injection in thin tunnel gate oxides in memory devices under Fowler–Nordheim stress

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n-type conduction in Ge-doped ${CuGaSe}_{2}$

J. H. Schön; J. Oestreich; O. Schenker; H. Riazi-Nejad; M. Klenk; N. Fabre; E. Arushanov; E. Bucher

Appl. Phys. Lett. 75, 2969–2971 (1999) https://doi.org/10.1063/1.125204

View articletitled, <em>n</em>-type conduction in Ge-doped <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CuGaSe</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math></span>

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Excitonic transitions and exchange splitting in Si quantum dots

F. A. Reboredo; A. Franceschetti; A. Zunger

Appl. Phys. Lett. 75, 2972–2974 (1999) https://doi.org/10.1063/1.125205

View articletitled, Excitonic transitions and exchange splitting in Si quantum dots

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Fabrication and transport properties of clean long one-dimensional quantum wires formed in modulation-doped GaAs/AlGaAs heterostructures

C.-T. Liang; M. Y. Simmons; C. G. Smith; D. A. Ritchie; M. Pepper

Appl. Phys. Lett. 75, 2975–2977 (1999) https://doi.org/10.1063/1.125206

View articletitled, Fabrication and transport properties of clean long one-dimensional quantum wires formed in modulation-doped GaAs/AlGaAs heterostructures

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Persistent photoconductivity in InGaP/GaAs heterostructures

J. C. Fan; J. C. Wang; Y. F. Chen

Appl. Phys. Lett. 75, 2978–2980 (1999) https://doi.org/10.1063/1.125207

View articletitled, Persistent photoconductivity in InGaP/GaAs heterostructures

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MAGNETISM AND SUPERCONDUCTIVITY

The irreversibility behavior of NdBaCuO fabricated by top-seeded melt processing

N. Hari Babu; W. Lo; D. A. Cardwell; A. M. Campbell

Appl. Phys. Lett. 75, 2981–2983 (1999) https://doi.org/10.1063/1.125208

View articletitled, The irreversibility behavior of NdBaCuO fabricated by top-seeded melt processing

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Magnetic properties of cast ${Nd}_{60−x} {Fe}_{20} {Al}_{10} {Co}_{10} {Cu}_{x}$ alloys

G. J. Fan; W. Löser; S. Roth; J. Eckert; L. Schultz

Appl. Phys. Lett. 75, 2984–2986 (1999) https://doi.org/10.1063/1.125209

View articletitled, Magnetic properties of cast <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Nd</mi><mrow><mtext>60−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mi mathvariant="normal">20</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi mathvariant="normal">10</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Co</mi><mrow><mi mathvariant="normal">10</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi>x</mi></mrow></msub></math></span> alloys

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Determination of critical thickness of spin reorientation in metastable magnetic ultrathin films

J. Shen; A. K. Swan; J. F. Wendelken

Appl. Phys. Lett. 75, 2987–2989 (1999) https://doi.org/10.1063/1.125210

View articletitled, Determination of critical thickness of spin reorientation in metastable magnetic ultrathin films

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Giant magnetic-field-induced strains in Heusler alloy NiMnGa with modified composition

G. H. Wu; C. H. Yu; L. Q. Meng; J. L. Chen; F. M. Yang; S. R. Qi; W. S. Zhan; Z. Wang; Y. F. Zheng; L. C. Zhao

Appl. Phys. Lett. 75, 2990–2992 (1999) https://doi.org/10.1063/1.125211

View articletitled, Giant magnetic-field-induced strains in Heusler alloy NiMnGa with modified composition

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Transmission Mössbauer spectroscopy on pulsed-laser-deposited thick Fe and Ni–Zn ferrite films

F. W. Oliver; D. Seifu; E. Hoffman; D. B. Chrisey; J. S. Horwitz; P. C. Dorsey

Appl. Phys. Lett. 75, 2993–2995 (1999) https://doi.org/10.1063/1.125212

View articletitled, Transmission Mössbauer spectroscopy on pulsed-laser-deposited thick Fe and Ni–Zn ferrite films

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Selective-area and lateral overgrowth of chromium dioxide $({CrO}_{2})$ films by chemical vapor deposition

A. Gupta; X. W. Li; S. Guha; Gang Xiao

Appl. Phys. Lett. 75, 2996–2998 (1999) https://doi.org/10.1063/1.125213

View articletitled, Selective-area and lateral overgrowth of chromium dioxide <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">CrO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi xmlns="">)</mi></math></span> films by chemical vapor deposition

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DIELECTRICS AND FERROELECTRICITY

Polarization measurements in anodized ${Al–Al}_{2} O_{3} –Au$ diodes

T. W. Hickmott

Appl. Phys. Lett. 75, 2999–3001 (1999) https://doi.org/10.1063/1.125214

View articletitled, Polarization measurements in anodized <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al–Al</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><mi mathvariant="normal" xmlns="">–Au</mi></math></span> diodes

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Enhanced electrical properties of ${Ba}_{0.5} {Sr}_{0.5} {TiO}_{3}$ thin films grown by ultraviolet-assisted pulsed-laser deposition

Anuranjan Srivastava; Valentin Craciun; Joshua M. Howard; Rajiv K. Singh

Appl. Phys. Lett. 75, 3002–3004 (1999) https://doi.org/10.1063/1.125215

View articletitled, Enhanced electrical properties of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ba</mi><mrow><mi mathvariant="normal">0.5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mi mathvariant="normal">0.5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span> thin films grown by ultraviolet-assisted pulsed-laser deposition

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Quantitative microwave evanescent microscopy

Chen Gao; Fred Duewer; X.-D. Xiang

Appl. Phys. Lett. 75, 3005–3007 (1999) https://doi.org/10.1063/1.125216

View articletitled, Quantitative microwave evanescent microscopy

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DEVICE PHYSICS

Bistable twisted nematic liquid-crystal optical switch

Zhizhong Zhuang; Young Jin Kim; J. S. Patel

Appl. Phys. Lett. 75, 3008–3010 (1999) https://doi.org/10.1063/1.125217

View articletitled, Bistable twisted nematic liquid-crystal optical switch

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Failure resistance of amorphous silicon transistors under extreme in-plane strain

H. Gleskova; S. Wagner; Z. Suo

Appl. Phys. Lett. 75, 3011–3013 (1999) https://doi.org/10.1063/1.125174

View articletitled, Failure resistance of amorphous silicon transistors under extreme in-plane strain

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Single-wall carbon nanotube circuits assembled with an atomic force microscope

J. Lefebvre; J. F. Lynch; M. Llaguno; M. Radosavljevic; A. T. Johnson

Appl. Phys. Lett. 75, 3014–3016 (1999) https://doi.org/10.1063/1.125218

View articletitled, Single-wall carbon nanotube circuits assembled with an atomic force microscope

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The environmental stability of field emission from single-walled carbon nanotubes

Kenneth A. Dean; Babu R. Chalamala

Appl. Phys. Lett. 75, 3017–3019 (1999) https://doi.org/10.1063/1.125219

View articletitled, The environmental stability of field emission from single-walled carbon nanotubes

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Coupled resonator vertical-cavity laser diode

A. J. Fischer; K. D. Choquette; W. W. Chow; H. Q. Hou; K. M. Geib

Appl. Phys. Lett. 75, 3020–3022 (1999) https://doi.org/10.1063/1.125220

View articletitled, Coupled resonator vertical-cavity laser diode

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INTERDISCIPLINARY AND GENERAL PHYSICS

In situ CdS nanocluster formation on scanning tunneling microscopy tips for reliable single-electron tunneling at room temperature

P. Jiang; Z. F. Liu; S. M. Cai

Appl. Phys. Lett. 75, 3023–3025 (1999) https://doi.org/10.1063/1.125221

View articletitled, <em>In situ</em> CdS nanocluster formation on scanning tunneling microscopy tips for reliable single-electron tunneling at room temperature

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Laser driven shock wave acceleration experiments using plastic foams

M. Koenig; A. Benuzzi-Mounaix; F. Philippe; B. Faral; D. Batani; T. A. Hall; N. Grandjouan; W. Nazarov; J. P. Chieze; R. Teyssier

Appl. Phys. Lett. 75, 3026–3028 (1999) https://doi.org/10.1063/1.125222

View articletitled, Laser driven shock wave acceleration experiments using plastic foams

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High-velocity surface acoustic waves in diamond and sapphire with zinc oxide film

N. F. Naumenko; I. S. Didenko

Appl. Phys. Lett. 75, 3029–3031 (1999) https://doi.org/10.1063/1.125223

View articletitled, High-velocity surface acoustic waves in diamond and sapphire with zinc oxide film

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Role of excess As in low-temperature grown GaAs subjected to ${BCl}_{3}$ reactive ion etching

M. N. Chang; C. C. Chuo; C. M. Lu; K. C. Hsieh; N. T. Yeh; J.-I. Chyi

Appl. Phys. Lett. 75, 3032–3034 (1999) https://doi.org/10.1063/1.125224

View articletitled, Role of excess As in low-temperature grown GaAs subjected to <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BCl</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span> reactive ion etching

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ERRATA

Erratum: “GaN evaporation in molecular beam epitaxy environment” [Appl. Phys. Lett. 74, 1854 (1999)]

N. Grandjean; J. Massies; F. Semond; S. Yu. Karpov; R. A. Talalaev

Appl. Phys. Lett. 75, 3035 (1999) https://doi.org/10.1063/1.125226

View articletitled, Erratum: “GaN evaporation in molecular beam epitaxy environment” [Appl. Phys. Lett. <strong>74</strong>, 1854 (1999)]

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Roadmap on photonic metasurfaces

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Feedback cooling of an insulating high-Q diamagnetically levitated plate

S. Tian, K. Jadeja, et al.

Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices

Joachim Würfl, Tomás Palacios, et al.

Online ISSN 1077-3118
Print ISSN 0003-6951

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