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Volume 75, Issue 18

1 November 1999

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
PLASMAS AND ELECTRICAL DISCHARGES
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
DEVICE PHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS

LASERS, OPTICS, AND OPTOELECTRONICS

Dynamic response of the electro-optic effect in epitaxial ${KNbO}_{3}$

B. H. Hoerman; B. M. Nichols; M. J. Nystrom; B. W. Wessels

Appl. Phys. Lett. 75, 2707–2709 (1999) https://doi.org/10.1063/1.125123

View articletitled, Dynamic response of the electro-optic effect in epitaxial <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">KNbO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span>

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Efficient polarization insensitive four-wave mixing using a semiconductor optical amplifier and one pump source in an optical loop

J. M. Tang; P. S. Spencer; K. A. Shore

Appl. Phys. Lett. 75, 2710–2712 (1999) https://doi.org/10.1063/1.125124

View articletitled, Efficient polarization insensitive four-wave mixing using a semiconductor optical amplifier and one pump source in an optical loop

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Polymer gel light-emitting devices

Shun-Chi Chang; Yang Yang

Appl. Phys. Lett. 75, 2713–2715 (1999) https://doi.org/10.1063/1.125125

View articletitled, Polymer gel light-emitting devices

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GaInNAs resonant-cavity-enhanced photodetector operating at 1.3 μm

J. B. Héroux; X. Yang; W. I. Wang

Appl. Phys. Lett. 75, 2716–2718 (1999) https://doi.org/10.1063/1.125126

View articletitled, GaInNAs resonant-cavity-enhanced photodetector operating at 1.3 μm

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A five-period normal-incidence (In, Ga)As/GaAs quantum-dot infrared photodetector

Dong Pan; Elias Towe; Steve Kennerly

Appl. Phys. Lett. 75, 2719–2721 (1999) https://doi.org/10.1063/1.125127

View articletitled, A five-period normal-incidence (In, Ga)As/GaAs quantum-dot infrared photodetector

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Continuous wave laser radiation at 1314 and 1386 nm and infrared to red self-frequency doubling in nonlinear ${LaBGeO}_{5} {Nd}^{3+}$ crystal

J. Capmany; D. Jaque; J. Garcı́a Solé

Appl. Phys. Lett. 75, 2722–2724 (1999) https://doi.org/10.1063/1.125128

View articletitled, Continuous wave laser radiation at 1314 and 1386 nm and infrared to red self-frequency doubling in nonlinear <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LaBGeO</mi><mrow><mi mathvariant="normal">5</mi></mrow></msub><msup xmlns=""><mi mathvariant="normal">Nd</mi><mrow><mi mathvariant="normal">3+</mi></mrow></msup></math></span> crystal

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Photonic crystals as optical components

P. Halevi; A. A. Krokhin; J. Arriaga

Appl. Phys. Lett. 75, 2725–2727 (1999) https://doi.org/10.1063/1.125129

View articletitled, Photonic crystals as optical components

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Generation of first-order terahertz optical sidebands in asymmetric coupled quantum wells

C. Phillips; M. Y. Su; M. S. Sherwin; J. Ko; L. Coldren

Appl. Phys. Lett. 75, 2728–2730 (1999) https://doi.org/10.1063/1.125130

View articletitled, Generation of first-order terahertz optical sidebands in asymmetric coupled quantum wells

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Simple and convenient nonoptical shear force sensor for shear force and near-field optical microscopes

Y. Bai; J. D. White; G. Zhang; G. Chen; X. Hou

Appl. Phys. Lett. 75, 2731–2733 (1999) https://doi.org/10.1063/1.125131

View articletitled, Simple and convenient nonoptical shear force sensor for shear force and near-field optical microscopes

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PLASMAS AND ELECTRICAL DISCHARGES

Ion acceleration in the radially expanding plasma of the hot refractory anode vacuum arc

I. I. Beilis; R. L. Boxman; S. Goldsmith; V. L. Paperny

Appl. Phys. Lett. 75, 2734–2736 (1999) https://doi.org/10.1063/1.125132

View articletitled, Ion acceleration in the radially expanding plasma of the hot refractory anode vacuum arc

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Negative ion enhancement in caesium-seeded hydrogen discharges—a volume or surface effect?

P. G. Steen; W. G. Graham

Appl. Phys. Lett. 75, 2737–2739 (1999) https://doi.org/10.1063/1.125133

View articletitled, Negative ion enhancement in caesium-seeded hydrogen discharges—a volume or surface effect?

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Z-contrast imaging and electron energy-loss spectroscopy analysis of chromium-doped diamond-like carbon films

X. Fan; E. C. Dickey; S. J. Pennycook; M. K. Sunkara

Appl. Phys. Lett. 75, 2740–2742 (1999) https://doi.org/10.1063/1.125134

View articletitled, <em>Z</em>-contrast imaging and electron energy-loss spectroscopy analysis of chromium-doped diamond-like carbon films

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In situ high-resolution transmission electron microscopy of direct bonding processes between silicon tips with oxide surfaces at room temperature

Tokushi Kizuka; Kazue Hosoki

Appl. Phys. Lett. 75, 2743–2745 (1999) https://doi.org/10.1063/1.125135

View articletitled, <em>In situ</em> high-resolution transmission electron microscopy of direct bonding processes between silicon tips with oxide surfaces at room temperature

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Effects of disorder on the optical gap of (Zn,Mg)(S,Se)

Antonino Marco Saitta; Stefano de Gironcoli; Stefano Baroni

Appl. Phys. Lett. 75, 2746–2748 (1999) https://doi.org/10.1063/1.125136

View articletitled, Effects of disorder on the optical gap of (Zn,Mg)(S,Se)

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Thermal strain in GaAs layers grown by epitaxial lateral overgrowth on Si substrates

Z. R. Zytkiewicz; J. Domagala

Appl. Phys. Lett. 75, 2749–2751 (1999) https://doi.org/10.1063/1.125137

View articletitled, Thermal strain in GaAs layers grown by epitaxial lateral overgrowth on Si substrates

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Controlled arrangement of self-organized Ge islands on patterned Si (001) substrates

G. Jin; J. L. Liu; S. G. Thomas; Y. H. Luo; K. L. Wang; Bich-Yen Nguyen

Appl. Phys. Lett. 75, 2752–2754 (1999) https://doi.org/10.1063/1.125138

View articletitled, Controlled arrangement of self-organized Ge islands on patterned Si (001) substrates

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Geometrical structure and electronic properties of atomically resolved multiwall carbon nanotubes

A. Hassanien; M. Tokumoto; S. Ohshima; Y. Kuriki; F. Ikazaki; K. Uchida; M. Yumura

Appl. Phys. Lett. 75, 2755–2757 (1999) https://doi.org/10.1063/1.125139

View articletitled, Geometrical structure and electronic properties of atomically resolved multiwall carbon nanotubes

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Stable hexagonal-wurtzite silicon phase by laser ablation

Yan Zhang; Zafar Iqbal; Sankaran Vijayalakshmi; Haim Grebel

Appl. Phys. Lett. 75, 2758–2760 (1999) https://doi.org/10.1063/1.125140

View articletitled, Stable hexagonal-wurtzite silicon phase by laser ablation

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Photoluminescence and ultraviolet lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn

Sunglae Cho; Jing Ma; Yunki Kim; Yi Sun; George K. L. Wong; John B. Ketterson

Appl. Phys. Lett. 75, 2761–2763 (1999) https://doi.org/10.1063/1.125141

View articletitled, Photoluminescence and ultraviolet lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn

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Microwave synthesis of fullerenes from chloroform

Su-yuan Xie; Rong-bin Huang; La-jia Yu; Jie Ding; Lan-sun Zheng

Appl. Phys. Lett. 75, 2764–2766 (1999) https://doi.org/10.1063/1.125142

View articletitled, Microwave synthesis of fullerenes from chloroform

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Direct nanoimprint of submicron organic light-emitting structures

Jian Wang; Xiaoyun Sun; Lei Chen; Stephen Y. Chou

Appl. Phys. Lett. 75, 2767–2769 (1999) https://doi.org/10.1063/1.125143

View articletitled, Direct nanoimprint of submicron organic light-emitting structures

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Nanocrystallization of ZrTiCuNiBeC bulk metallic glass under high pressure

Wei Hua Wang; D. W. He; D. Q. Zhao; Y. S. Yao; M. He

Appl. Phys. Lett. 75, 2770–2772 (1999) https://doi.org/10.1063/1.125144

View articletitled, Nanocrystallization of ZrTiCuNiBeC bulk metallic glass under high pressure

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Nanotube electronic states observed with thermal field emission electron spectroscopy

Kenneth A. Dean; Oliver Groening; Olivier M. Küttel; L. Schlapbach

Appl. Phys. Lett. 75, 2773–2775 (1999) https://doi.org/10.1063/1.125145

View articletitled, Nanotube electronic states observed with thermal field emission electron spectroscopy

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Determination of the critical layer thickness in the InGaN/GaN heterostructures

C. A. Parker; J. C. Roberts; S. M. Bedair; M. J. Reed; S. X. Liu; N. A. El-Masry

Appl. Phys. Lett. 75, 2776–2778 (1999) https://doi.org/10.1063/1.125146

View articletitled, Determination of the critical layer thickness in the InGaN/GaN heterostructures

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Control of surface states in ${GaSb/Al}_{x} {Ga}_{1−x} {As}_{y} {Sb}_{1−y} / {Ga}_{x} {In}_{1−x} {Sb/Al}_{x} {Ga}_{1−x} {As}_{y} {Sb}_{1−y}$ quantum well structures

D. K. Johnstone; Y. K. Yeo; R. L. Hengehold; G. W. Turner

Appl. Phys. Lett. 75, 2779–2781 (1999) https://doi.org/10.1063/1.125147

View articletitled, Control of surface states in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">GaSb/Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">As</mi><mrow><mi>y</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sb</mi><mrow><mtext>1−y</mtext></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sb/Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">As</mi><mrow><mi>y</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sb</mi><mrow><mtext>1−y</mtext></mrow></msub></math></span> quantum well structures

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Design of composite InAsP/InGaAs quantum wells for a 1.55 μm polarization independent semiconductor optical amplifier

J. E. M. Haverkort; B. H. P. Dorren; M. Kemerink; A. Yu. Silov; J. H. Wolter

Appl. Phys. Lett. 75, 2782–2784 (1999) https://doi.org/10.1063/1.125148

View articletitled, Design of composite InAsP/InGaAs quantum wells for a 1.55 μm polarization independent semiconductor optical amplifier

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Silicon dopant imaging by dissipation force microscopy

T. D. Stowe; T. W. Kenny; D. J. Thomson; D. Rugar

Appl. Phys. Lett. 75, 2785–2787 (1999) https://doi.org/10.1063/1.125149

View articletitled, Silicon dopant imaging by dissipation force microscopy

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Radiative recombination of two-dimensional electrons in a modulation-doped ${Al}_{0.37} {Ga}_{0.63} N/GaN$ single heterostructure

Ho Ki Kwon; C. J. Eiting; D. J. H. Lambert; B. S. Shelton; M. M. Wong; T.-G. Zhu; R. D. Dupuis

Appl. Phys. Lett. 75, 2788–2790 (1999) https://doi.org/10.1063/1.125150

View articletitled, Radiative recombination of two-dimensional electrons in a modulation-doped <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi mathvariant="normal">0.37</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi mathvariant="normal">0.63</mi></mrow></msub><mi mathvariant="normal" xmlns="">N/GaN</mi></math></span> single heterostructure

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Use of x-ray microbeams for cross-section depth profiling of MeV ion-implantation-induced defect clusters in Si

Mirang Yoon; B. C. Larson; J. Z. Tischler; T. E. Haynes; J.-S. Chung; G. E. Ice; P. Zschack

Appl. Phys. Lett. 75, 2791–2793 (1999) https://doi.org/10.1063/1.125151

View articletitled, Use of x-ray microbeams for cross-section depth profiling of MeV ion-implantation-induced defect clusters in Si

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Near-surface electronic structure on InAs(100) modified with self-assembled monolayers of alkanethiols

T. A. Tanzer; P. W. Bohn; I. V. Roshchin; L. H. Greene; J. F. Klem

Appl. Phys. Lett. 75, 2794–2796 (1999) https://doi.org/10.1063/1.125152

View articletitled, Near-surface electronic structure on InAs(100) modified with self-assembled monolayers of alkanethiols

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Interdiffusion and surface segregation in stacked self-assembled InAs/GaAs quantum dots

B. Lita; R. S. Goldman; J. D. Phillips; P. K. Bhattacharya

Appl. Phys. Lett. 75, 2797–2799 (1999) https://doi.org/10.1063/1.125153

View articletitled, Interdiffusion and surface segregation in stacked self-assembled InAs/GaAs quantum dots

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The nature of the electron distribution functions in quantum cascade lasers

P. Harrison

Appl. Phys. Lett. 75, 2800–2802 (1999) https://doi.org/10.1063/1.125154

View articletitled, The nature of the electron distribution functions in quantum cascade lasers

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The effect of hydrogen on the network disorder in hydrogenated amorphous silicon

S. Gupta; R. S. Katiyar; G. Morell; S. Z. Weisz; I. Balberg

Appl. Phys. Lett. 75, 2803–2805 (1999) https://doi.org/10.1063/1.125155

View articletitled, The effect of hydrogen on the network disorder in hydrogenated amorphous silicon

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Piezoelectric doping in AlInGaN/GaN heterostructures

M. Asif Khan; J. W. Yang; G. Simin; R. Gaska; M. S. Shur; A. D. Bykhovski

Appl. Phys. Lett. 75, 2806–2808 (1999) https://doi.org/10.1063/1.125156

View articletitled, Piezoelectric doping in AlInGaN/GaN heterostructures

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MAGNETISM AND SUPERCONDUCTIVITY

On-chip spectroscopic detection of terahertz radiation emitted from a quasiparticle-injected nonequilibrium superconductor using a high- $T_{c}$ Josephson junction

E. Kume; I. Iguchi; H. Takahashi

Appl. Phys. Lett. 75, 2809–2811 (1999) https://doi.org/10.1063/1.125157

View articletitled, On-chip spectroscopic detection of terahertz radiation emitted from a quasiparticle-injected nonequilibrium superconductor using a high-<span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>T</mi><mrow><mi>c</mi></mrow></msub></math></span> Josephson junction

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Intra- versus intergranular low-field magnetoresistance of ${Sr}_{2} {FeMoO}_{6}$ thin films

H. Q. Yin; J.-S. Zhou; J.-P. Zhou; R. Dass; J. T. McDevitt; John B. Goodenough

Appl. Phys. Lett. 75, 2812–2814 (1999) https://doi.org/10.1063/1.125158

View articletitled, Intra- versus intergranular low-field magnetoresistance of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">FeMoO</mi><mrow><mi mathvariant="normal">6</mi></mrow></msub></math></span> thin films

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Injection of a magnetic domain wall into a submicron magnetic wire

K. Shigeto; T. Shinjo; T. Ono

Appl. Phys. Lett. 75, 2815–2817 (1999) https://doi.org/10.1063/1.125159

View articletitled, Injection of a magnetic domain wall into a submicron magnetic wire

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Growth and structural and magnetic characterization of the FePd ordered alloy on CdZnTe II–VI semiconductor

C. Bourgognon; S. Tatarenko; J. Cibert; B. Gilles; A. Marty; Y. Samson

Appl. Phys. Lett. 75, 2818–2820 (1999) https://doi.org/10.1063/1.125160

View articletitled, Growth and structural and magnetic characterization of the FePd ordered alloy on CdZnTe II–VI semiconductor

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Low-frequency noise of improved direct-coupled high- $T_{c}$ superconducting quantum interference device magnetometers in ac and dc magnetic fields

F. Ludwig; D. Drung

Appl. Phys. Lett. 75, 2821–2823 (1999) https://doi.org/10.1063/1.125161

View articletitled, Low-frequency noise of improved direct-coupled high-<span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>T</mi><mrow><mi>c</mi></mrow></msub></math></span> superconducting quantum interference device magnetometers in ac and dc magnetic fields

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Imaging of microwave intermodulation fields in a superconducting microstrip resonator

Wensheng Hu; A. S. Thanawalla; B. J. Feenstra; F. C. Wellstood; Steven M. Anlage

Appl. Phys. Lett. 75, 2824–2826 (1999) https://doi.org/10.1063/1.125162

View articletitled, Imaging of microwave intermodulation fields in a superconducting microstrip resonator

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DIELECTRICS AND FERROELECTRICITY

Controlled growth of $a-/b$ - and c-axis oriented epitaxial ${SrBi}_{2} {Ta}_{2} O_{9}$ ferroelectric thin films

S. E. Moon; T. K. Song; S. B. Back; S.-I. Kwun; J.-G. Yoon; J. S. Lee

Appl. Phys. Lett. 75, 2827–2829 (1999) https://doi.org/10.1063/1.125163

View articletitled, Controlled growth of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">a-/b</mi></math></span>- and <em>c</em>-axis oriented epitaxial <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrBi</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ta</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">9</mi></mrow></msub></math></span> ferroelectric thin films

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Ab initio study of 180° domain wall energy and structure in ${PbTiO}_{3}$

S. Pöykkö; D. J. Chadi

Appl. Phys. Lett. 75, 2830–2832 (1999) https://doi.org/10.1063/1.125164

View articletitled, <em>Ab initio</em> study of 180° domain wall energy and structure in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">PbTiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span>

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Scanning nonlinear dielectric microscopy with nanometer resolution

Yasuo Cho; Satoshi Kazuta; Kaori Matsuura

Appl. Phys. Lett. 75, 2833–2835 (1999) https://doi.org/10.1063/1.125165

View articletitled, Scanning nonlinear dielectric microscopy with nanometer resolution

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Electrical characteristics of ${Ta}_{2} O_{5}$ thin films deposited by electron beam gun evaporation

V. Mikhelashvili; G. Eisenstein

Appl. Phys. Lett. 75, 2836–2838 (1999) https://doi.org/10.1063/1.125166

View articletitled, Electrical characteristics of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ta</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">5</mi></mrow></msub></math></span> thin films deposited by electron beam gun evaporation

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Degradation of ferroelectric ${SrBi}_{2} {Ta}_{2} O_{9}$ materials under reducing conditions and their reaction with Pt electrodes

Y. Shimakawa; Y. Kubo

Appl. Phys. Lett. 75, 2839–2841 (1999) https://doi.org/10.1063/1.125167

View articletitled, Degradation of ferroelectric <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrBi</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ta</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">9</mi></mrow></msub></math></span> materials under reducing conditions and their reaction with Pt electrodes

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DEVICE PHYSICS

Carbon nanotube-modified cantilevers for improved spatial resolution in electrostatic force microscopy

S. B. Arnason; A. G. Rinzler; Q. Hudspeth; A. F. Hebard

Appl. Phys. Lett. 75, 2842–2844 (1999) https://doi.org/10.1063/1.125168

View articletitled, Carbon nanotube-modified cantilevers for improved spatial resolution in electrostatic force microscopy

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The “nanotriode:” A nanoscale field-emission tube

A. A. G. Driskill-Smith; D. G. Hasko; H. Ahmed

Appl. Phys. Lett. 75, 2845–2847 (1999) https://doi.org/10.1063/1.125169

View articletitled, The “nanotriode:” A nanoscale field-emission tube

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Si field-effect transistor with doping dipole in buffer layer

San Lein Wu; Shoou Jinn Chang

Appl. Phys. Lett. 75, 2848–2850 (1999) https://doi.org/10.1063/1.125170

View articletitled, Si field-effect transistor with doping dipole in buffer layer

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Fabrication of transparent $p–n$ heterojunction thin film diodes based entirely on oxide semiconductors

Atsushi Kudo; Hiroshi Yanagi; Kazushige Ueda; Hideo Hosono; Hiroshi Kawazoe; Yoshihiko Yano

Appl. Phys. Lett. 75, 2851–2853 (1999) https://doi.org/10.1063/1.125171

View articletitled, Fabrication of transparent <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p–n</mi></math></span> heterojunction thin film diodes based entirely on oxide semiconductors

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INTERDISCIPLINARY AND GENERAL PHYSICS

Metallic nanowires created by biopolymer masking

Wolfgang Fritzsche; Konrad J. Böhm; Eberhard Unger; J. Michael Köhler

Appl. Phys. Lett. 75, 2854–2856 (1999) https://doi.org/10.1063/1.125172

View articletitled, Metallic nanowires created by biopolymer masking

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Defect structure and electron field-emission properties of boron-doped diamond films

Yung-Hsin Chen; Chen-Ti Hu; I-Nan Lin

Appl. Phys. Lett. 75, 2857–2859 (1999) https://doi.org/10.1063/1.125173

View articletitled, Defect structure and electron field-emission properties of boron-doped diamond films

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