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Volume 75, Issue 17

25 October 1999

Applied Physics Letters Cover Image for Volume 75, Issue 17

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
PLASMAS AND ELECTRICAL DISCHARGES
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
DEVICE PHYSICS
APPLIED BIOPHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS
ERRATA

LASERS, OPTICS, AND OPTOELECTRONICS

Microphotoluminescence mapping of packaging-induced stress distribution in high-power AlGaAs laser diodes

E. Martin; J. P. Landesman; J. P. Hirtz; A. Fily

Appl. Phys. Lett. 75, 2521–2523 (1999) https://doi.org/10.1063/1.125064

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Free-space electro-optic detection of continuous-wave terahertz radiation

Ajay Nahata; James T. Yardley; Tony F. Heinz

Appl. Phys. Lett. 75, 2524–2526 (1999) https://doi.org/10.1063/1.125065

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Determination of single-pass optical gain and internal loss using a multisection device

J. D. Thomson; H. D. Summers; P. J. Hulyer; P. M. Smowton; P. Blood

Appl. Phys. Lett. 75, 2527–2529 (1999) https://doi.org/10.1063/1.125066

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Generation of 290 fs laser pulses by self-seeding and soliton compression

D. Huhse; O. Reimann; E. H. Böttcher; D. Bimberg

Appl. Phys. Lett. 75, 2530–2532 (1999) https://doi.org/10.1063/1.125067

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Demonstration of a three-dimensional simple-cubic infrared photonic crystal

Lisa Zavieh; Theresa S. Mayer

Appl. Phys. Lett. 75, 2533–2535 (1999) https://doi.org/10.1063/1.125068

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High-speed operation of gain-switched midinfrared quantum cascade lasers

Roberto Paiella; Federico Capasso; Claire Gmachl; Clyde G. Bethea; Deborah L. Sivco; James N. Baillargeon; Albert L. Hutchinson; Alfred Y. Cho

Appl. Phys. Lett. 75, 2536–2538 (1999) https://doi.org/10.1063/1.125069

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PLASMAS AND ELECTRICAL DISCHARGES

The effect of laser-produced plasma expansion on the ion population

J. Krása; L. Láska; K. Rohlena; M. Pfeifer; J. Skála; B. Králiková; P. Straka; E. Woryna; J. Wolowski

Appl. Phys. Lett. 75, 2539–2541 (1999) https://doi.org/10.1063/1.125070

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Atomic structure of ${Ba}_{0.5} {Sr}_{0.5} {TiO}_{3}$ thin films on ${LaAlO}_{3}$

H.-J. Gao; C. L. Chen; B. Rafferty; S. J. Pennycook; G. P. Luo; C. W. Chu

Appl. Phys. Lett. 75, 2542–2544 (1999) https://doi.org/10.1063/1.125071

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Structural and optical characteristics of ${In}_{x} {Ga}_{1−x} N/GaN$ multiple quantum wells with different In compositions

Yong-Hwan Kwon; G. H. Gainer; S. Bidnyk; Y. H. Cho; J. J. Song; M. Hansen; S. P. DenBaars

Appl. Phys. Lett. 75, 2545–2547 (1999) https://doi.org/10.1063/1.125072

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Recovery phenomenon of mechanoluminescence from ${Ca}_{2} {Al}_{2} {SiO}_{7} : Ce$ by irradiation with ultraviolet light

Morito Akiyama; Chao-Nan Xu; Hiroaki Matsui; Kazuhiro Nonaka; Tadahiko Watanabe

Appl. Phys. Lett. 75, 2548–2550 (1999) https://doi.org/10.1063/1.125073

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Phase imaging: Deep or superficial?

O. P. Behrend; L. Odoni; J. L. Loubet; N. A. Burnham

Appl. Phys. Lett. 75, 2551–2553 (1999) https://doi.org/10.1063/1.125074

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Leakage current behaviors of acceptor- and donor-doped ${(Ba}_{0.5} {Sr}_{0.5}) {TiO}_{3}$ thin films

Sang Sub Kim; Chanro Park

Appl. Phys. Lett. 75, 2554–2556 (1999) https://doi.org/10.1063/1.125075

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The controlled formation of ordered, sinusoidal structures by plasma oxidation of an elastomeric polymer

Ned Bowden; Wilhelm T. S. Huck; Kateri E. Paul; George M. Whitesides

Appl. Phys. Lett. 75, 2557–2559 (1999) https://doi.org/10.1063/1.125076

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Strong and stable visible luminescence from Au-passivated porous silicon

C. H. Chen; Y. F. Chen

Appl. Phys. Lett. 75, 2560–2562 (1999) https://doi.org/10.1063/1.125077

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Optical resonance modes in InGaN/GaN multiple-quantum-well microring cavities

K. C. Zeng; L. Dai; J. Y. Lin; H. X. Jiang

Appl. Phys. Lett. 75, 2563–2565 (1999) https://doi.org/10.1063/1.125078

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Optical band gap dependence on composition and thickness of ${In}_{x} {Ga}_{1−x} N$ $(0<x<0.25)$ grown on GaN

C. A. Parker; J. C. Roberts; S. M. Bedair; M. J. Reed; S. X. Liu; N. A. El-Masry; L. H. Robins

Appl. Phys. Lett. 75, 2566–2568 (1999) https://doi.org/10.1063/1.125079

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Electrical effects of plasma damage in $p- GaN$

X. A. Cao; S. J. Pearton; A. P. Zhang; G. T. Dang; F. Ren; R. J. Shul; L. Zhang; R. Hickman; J. M. Van Hove

Appl. Phys. Lett. 75, 2569–2571 (1999) https://doi.org/10.1063/1.125080

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Nanoscale structure and chemistry of ${Al}_{0.49} {In}_{0.51} P$ thermal oxide

D. T. Mathes; R. Hull; R. D. Dupuis; R. D. Heller; B. P. Tinkham

Appl. Phys. Lett. 75, 2572–2574 (1999) https://doi.org/10.1063/1.125081

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Subpicosecond carrier dynamics in low-temperature grown GaAs on Si substrates

C. Kadow; S. B. Fleischer; J. P. Ibbetson; J. E. Bowers; A. C. Gossard

Appl. Phys. Lett. 75, 2575–2577 (1999) https://doi.org/10.1063/1.125082

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Band gaps of lattice-matched (Ga,In)(As,N) alloys

L. Bellaiche

Appl. Phys. Lett. 75, 2578–2580 (1999) https://doi.org/10.1063/1.125083

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Quantum interference control of currents in CdSe with a single optical beam

N. Laman; A. I. Shkrebtii; J. E. Sipe; H. M. van Driel

Appl. Phys. Lett. 75, 2581–2583 (1999) https://doi.org/10.1063/1.125084

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Enhancement of erbium photoluminescence by substitutional C alloying of Si

M. Markmann; E. Neufeld; A. Sticht; K. Brunner; G. Abstreiter; Ch. Buchal

Appl. Phys. Lett. 75, 2584–2586 (1999) https://doi.org/10.1063/1.125085

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Indium incorporation above $800 ° C$ during metalorganic vapor phase epitaxy of InGaN

H. P. D. Schenk; P. de Mierry; M. Laügt; F. Omnès; M. Leroux; B. Beaumont; P. Gibart

Appl. Phys. Lett. 75, 2587–2589 (1999) https://doi.org/10.1063/1.125086

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The electronic passivation properties of Si nanoislands on GaAs(110) step defects induced by cleaving

K. S. Teng; P. R. Dunstan; S. P. Wilks; R. H. Williams

Appl. Phys. Lett. 75, 2590–2592 (1999) https://doi.org/10.1063/1.125087

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Low-field recombination in SrS:Cu thin-film electroluminescent devices

K. Neyts; G. Stuyven

Appl. Phys. Lett. 75, 2593–2595 (1999) https://doi.org/10.1063/1.125088

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Heavy Si doping in AlGaAs near modulation-doped heterointerfaces

Yuichi Sasajima; Masahiko Hata

Appl. Phys. Lett. 75, 2596–2598 (1999) https://doi.org/10.1063/1.125089

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Wafer-scale sub-micron lithography

Dahl-Young Khang; Hong H. Lee

Appl. Phys. Lett. 75, 2599–2601 (1999) https://doi.org/10.1063/1.125090

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Oxidation study of GaN using x-ray photoemission spectroscopy

N. J. Watkins; G. W. Wicks; Yongli Gao

Appl. Phys. Lett. 75, 2602–2604 (1999) https://doi.org/10.1063/1.125091

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Room-temperature lasing oscillation in an InGaN self-assembled quantum dot laser

Koichi Tachibana; Takao Someya; Yasuhiko Arakawa; Ralph Werner; Alfred Forchel

Appl. Phys. Lett. 75, 2605–2607 (1999) https://doi.org/10.1063/1.125092

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Molecular-beam epitaxy growth and nitrogen doping of ${ZnSe}_{1−x} {Te}_{x}$ alloys grown on InP substrates

W. Lin; B. X. Yang; S. P. Guo; A. Elmoumni; F. Fernandez; M. C. Tamargo

Appl. Phys. Lett. 75, 2608–2610 (1999) https://doi.org/10.1063/1.125093

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Application of the combinatorial approach to the fabrication of a quantum well multiwavelength emitting chip

Xing Quan Liu; Zhi Feng Li; Wei Lu; S. C. Shen; ChangMing Chen; D. Z. Zhu; Jun Hu; MinQian Li

Appl. Phys. Lett. 75, 2611–2613 (1999) https://doi.org/10.1063/1.125094

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Sub-Poisson current noise in ballistic space-charge-limited diodes with linear $I–V$ characteristics

O. M. Bulashenko; J. M. Rubı́; V. A. Kochelap

Appl. Phys. Lett. 75, 2614–2616 (1999) https://doi.org/10.1063/1.125095

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Efficient Auger-excitation of erbium electroluminescence in reversely-biased silicon structures

M. S. Bresler; O. B. Gusev; P. E. Pak; I. N. Yassievich

Appl. Phys. Lett. 75, 2617–2619 (1999) https://doi.org/10.1063/1.125096

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Dynamic dc voltage band observed within each current branch in the transition from static to dynamic electric-field domain formation in a doped GaAs/AlAs superlattice

Jiannong Wang; Baoquan Sun; Xiangrong Wang; Yuqi Wang; Wekun Ge; Hailong Wang

Appl. Phys. Lett. 75, 2620–2622 (1999) https://doi.org/10.1063/1.125097

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Effects of irradiation temperature and dose on exfoliation of $H^{+} -$ implanted silicon carbide

R. B. Gregory; T. A. Wetteroth; S. R. Wilson; O. W. Holland; D. K. Thomas

Appl. Phys. Lett. 75, 2623–2625 (1999) https://doi.org/10.1063/1.125098

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Cross-sectional atomic force microscopy of ZnMgSSe- and BeMgZnSe-based laser diodes

A. V. Ankudinov; A. N. Titkov; T. V. Shubina; S. V. Ivanov; P. S. Kop’ev; H.-J. Lugauer; G. Reuscher; M. Keim; A. Waag; G. Landwehr

Appl. Phys. Lett. 75, 2626–2628 (1999) https://doi.org/10.1063/1.125099

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The effect of implantation, energy, and dose on extended defect formation for MeV phosphorus implanted silicon

Craig Jasper; Allen Hoover; Kevin S. Jones

Appl. Phys. Lett. 75, 2629–2631 (1999) https://doi.org/10.1063/1.125100

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Preferential nucleation of GaN quantum dots at the edge of AlN threading dislocations

J. L. Rouvière; J. Simon; N. Pelekanos; B. Daudin; G. Feuillet

Appl. Phys. Lett. 75, 2632–2634 (1999) https://doi.org/10.1063/1.125101

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Single crystalline ZnO films grown on lattice-matched ${ScAlMgO}_{4} (0001)$ substrates

A. Ohtomo; K. Tamura; K. Saikusa; K. Takahashi; T. Makino; Y. Segawa; H. Koinuma; M. Kawasaki

Appl. Phys. Lett. 75, 2635–2637 (1999) https://doi.org/10.1063/1.125102

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MAGNETISM AND SUPERCONDUCTIVITY

Growth and magnetoresistive properties of $({LaMnO}_{3})_{m} ({SrMnO}_{3})_{n}$ superlattices

P. A. Salvador; A.-M. Haghiri-Gosnet; B. Mercey; M. Hervieu; B. Raveau

Appl. Phys. Lett. 75, 2638–2640 (1999) https://doi.org/10.1063/1.125103

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Switching asymmetries in closely coupled magnetic nanostructure arrays

R. E. Dunin-Borkowski; M. R. McCartney; B. Kardynal; David J. Smith; M. R. Scheinfein

Appl. Phys. Lett. 75, 2641–2643 (1999) https://doi.org/10.1063/1.125104

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DIELECTRICS AND FERROELECTRICITY

Different fatigue behaviors of ${SrBi}_{2} {Ta}_{2} O_{9}$ and ${Bi}_{3} {TiTaO}_{9}$ films: Role of perovskite layers

B. S. Kang; B. H. Park; S. D. Bu; S. H. Kang; T. W. Noh

Appl. Phys. Lett. 75, 2644–2646 (1999) https://doi.org/10.1063/1.125105

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$({Pb}_{1−x} {La}_{x})({Zr}_{1−y} {Ti}_{y}) O_{3}$ patterns on Pt-coated silicon prepared by pulsed laser deposition process

Kuo-Shung Liu; Yu-Jen Chen; Gwo Jamn; I-Nan Lin

Appl. Phys. Lett. 75, 2647–2649 (1999) https://doi.org/10.1063/1.125106

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Enhanced ferroelectric properties and lowered processing temperatures of strontium bismuth niobates with vanadium doping

Yun Wu; Guozhong Cao

Appl. Phys. Lett. 75, 2650–2652 (1999) https://doi.org/10.1063/1.125107

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High electrostrictive strain under high mechanical stress in electron-irradiated poly(vinylidene fluoride-trifluoroethylene) copolymer

Vivek Bharti; Z.-Y. Cheng; S. Gross; T.-B. Xu; Q. M. Zhang

Appl. Phys. Lett. 75, 2653–2655 (1999) https://doi.org/10.1063/1.125108

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Growth and characterization of ${SrBi}_{2} {Nb}_{2} O_{9}$ thin films by pulsed-laser ablation

S. Bhattacharyya; S. S. N. Bharadwaja; S. B. Krupanidhi

Appl. Phys. Lett. 75, 2656–2658 (1999) https://doi.org/10.1063/1.125109

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DEVICE PHYSICS

Optimized random/ordered grating for an n-type quantum well infrared photodetector

Shmuel I. Borenstain; U. Arad; I. Lyubina; A. Segal; Y. Warschawer

Appl. Phys. Lett. 75, 2659–2661 (1999) https://doi.org/10.1063/1.125110

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Supercapacitors based on nanostructured carbon electrodes grown by cluster-beam deposition

L. Diederich; E. Barborini; P. Piseri; A. Podestà; P. Milani; A. Schneuwly; R. Gallay

Appl. Phys. Lett. 75, 2662–2664 (1999) https://doi.org/10.1063/1.125111

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Storage capabilities of a four-junction single-electron trap with an on-chip resistor

S. V. Lotkhov; H. Zangerle; A. B. Zorin; J. Niemeyer

Appl. Phys. Lett. 75, 2665–2667 (1999) https://doi.org/10.1063/1.125112

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Application of an AlGaAs/GaAs/InGaAs heterostructure emitter for a resonant-tunneling transistor

Jung-Hui Tsai

Appl. Phys. Lett. 75, 2668–2670 (1999) https://doi.org/10.1063/1.125113

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APPLIED BIOPHYSICS

Separation of a single cell by red-laser manipulation

Shuji Shikano; Koji Horio; Yoshihiro Ohtsuka; Yuzuro Eto

Appl. Phys. Lett. 75, 2671–2673 (1999) https://doi.org/10.1063/1.125114

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INTERDISCIPLINARY AND GENERAL PHYSICS

Studies on the reaction of the $5^{'}$ -phosphorimidazolide of adenosine with Cu(II)-exchanged hectorite

T. L. Porter; R. Whitehorse; M. P. Eastman; E. D. Bain

Appl. Phys. Lett. 75, 2674–2676 (1999) https://doi.org/10.1063/1.125115

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Gas-assisted focused-ion-beam lithography of a diamond (100) surface

A. Datta; Yuh-Renn Wu; Y. L. Wang

Appl. Phys. Lett. 75, 2677–2679 (1999) https://doi.org/10.1063/1.125116

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Electron emission from films of carbon nanotubes and $ta- C$ coated nanotubes

S. Dimitrijevic; J. C. Withers; V. P. Mammana; O. R. Monteiro; J. W. Ager, III; I. G. Brown

Appl. Phys. Lett. 75, 2680–2682 (1999) https://doi.org/10.1063/1.125122

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Mechanism for acoustic leakage in surface-acoustic wave resonators on rotated Y-cut lithium tantalate substrate

J. Koskela; J. V. Knuuttila; P. T. Tikka; C. S. Hartmann; V. P. Plessky; M. M. Salomaa

Appl. Phys. Lett. 75, 2683–2685 (1999) https://doi.org/10.1063/1.125117

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Single-event keV proton detection using a delta-doped charge-coupled device

Shouleh Nikzad; Donald Croley; S. Tom Elliott; Thomas J. Cunningham; W. K. Proniewicz; G. B. Murphy; Todd J. Jones

Appl. Phys. Lett. 75, 2686–2688 (1999) https://doi.org/10.1063/1.125118

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Fountain pen nanochemistry: Atomic force control of chrome etching

Aaron Lewis; Yuri Kheifetz; Efim Shambrodt; Anna Radko; Edward Khatchatryan; Chaim Sukenik

Appl. Phys. Lett. 75, 2689–2691 (1999) https://doi.org/10.1063/1.125120

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ERRATA

Erratum: “A $(2 \sqrt{3} ×2 \sqrt{13)}$ surface phase in the 6H–SiC(0001) surface studied by scanning tunneling microscopy” [Appl. Phys. Lett. 75, 650 (1999)]

M. Naitoh; J. Takami; S. Nishigaki; N. Toyama

Appl. Phys. Lett. 75, 2692 (1999) https://doi.org/10.1063/1.125119

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