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Volume 75, Issue 13

27 September 1999

Applied Physics Letters Cover Image for Volume 75, Issue 13

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
PLASMAS AND ELECTRICAL DISCHARGES
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
DEVICE PHYSICS
APPLIED BIOPHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS

LASERS, OPTICS, AND OPTOELECTRONICS

A continuous-wave tunable solid-state blue laser based on intracavity sum-frequency mixing and pump-wavelength tuning

C. Q. Wang; Y. T. Chow; W. A. Gambling; D. R. Yuan; D. Xu; G. H. Zhang; M. H. Jiang

Appl. Phys. Lett. 75, 1821–1823 (1999) https://doi.org/10.1063/1.124839

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Scanning near-field optical spectroscopy and imaging using nanofabricated probes

H. Zhou; A. Midha; G. Mills; L. Donaldson; J. M. R. Weaver

Appl. Phys. Lett. 75, 1824–1826 (1999) https://doi.org/10.1063/1.124840

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Blue-green variable light-emitting diode based on organic–molecule-doped polymer

Chunxiang Xu; Yiping Cui; Yingzhong Shen; Hongwei Gu; Yi Pan; Yinkui Li

Appl. Phys. Lett. 75, 1827–1829 (1999) https://doi.org/10.1063/1.124841

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Raman scattering enhancement in porous silicon microcavity

L. A. Kuzik; V. A. Yakovlev; G. Mattei

Appl. Phys. Lett. 75, 1830–1832 (1999) https://doi.org/10.1063/1.124842

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Upconversion luminescence of Er-implanted GaN films by focused-ion-beam direct write

L. C. Chao; B. K. Lee; C. J. Chi; J. Cheng; I. Chyr; A. J. Steckl

Appl. Phys. Lett. 75, 1833–1835 (1999) https://doi.org/10.1063/1.124843

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Selective electroluminescence from a single stack of sidewall quantum wires on patterned GaAs (311)A substrates

Wenquan Ma; Richard Nötzel; Manfred Ramsteiner; Uwe Jahn; Hans-Peter Schönherr; Helmar Kostial; Klaus H. Ploog

Appl. Phys. Lett. 75, 1836–1838 (1999) https://doi.org/10.1063/1.124844

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Effects of broad-waveguide structure in 0.8 μm high-power InGaAsP/InGaP/AlGaAs lasers

T. Hayakawa; M. Wada; F. Yamanaka; H. Asano; T. Kuniyasu; T. Ohgoh; T. Fukunaga

Appl. Phys. Lett. 75, 1839–1841 (1999) https://doi.org/10.1063/1.124845

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Diameter modification of silicon nanowires by ambient gas

Y. F. Zhang; Y. H. Tang; H. Y. Peng; N. Wang; C. S. Lee; I. Bello; S. T. Lee

Appl. Phys. Lett. 75, 1842–1844 (1999) https://doi.org/10.1063/1.124846

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Third-order nonlinear optical properties of ${didodecyldimethylammonium–Au(dmit)}_{2}$

Shufeng Wang; Wentao Huang; Tieqiao Zhang; Hong Yang; Qihuang Gong; Yoshihito Okuma; Masashi Horikiri; Yasuhiro F. Miura

Appl. Phys. Lett. 75, 1845–1847 (1999) https://doi.org/10.1063/1.124847

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Band gap and wave guiding effect in a quasiperiodic photonic crystal

Chongjun Jin; Bingying Cheng; Baoyuan Man; Zhaolin Li; Daozhong Zhang; Shouzheng Ban; Bo Sun

Appl. Phys. Lett. 75, 1848–1850 (1999) https://doi.org/10.1063/1.124848

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PLASMAS AND ELECTRICAL DISCHARGES

The interplay of sputtering and oxidation during plasma diffusion treatment

S. Parascandola; O. Kruse; W. Möller

Appl. Phys. Lett. 75, 1851–1853 (1999) https://doi.org/10.1063/1.124849

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Thermal and electrical transport properties of the single-phase quasicrystalline material: ${Al}_{70.8} {Pd}_{20.9} {Mn}_{8.3}$

A. L. Pope; Terry M. Tritt; M. A. Chernikov; M. Feuerbacher

Appl. Phys. Lett. 75, 1854–1856 (1999) https://doi.org/10.1063/1.124850

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Absorption spectra of nanocrystalline silicon embedded in ${SiO}_{2}$ matrix

Zhixun Ma; Xianbo Liao; Gonglin Kong; Junhao Chu

Appl. Phys. Lett. 75, 1857–1859 (1999) https://doi.org/10.1063/1.124851

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Grain growth in thin-film strontium sulfide electroluminescent phosphors

Y. B. Xin; C. J. Summers

Appl. Phys. Lett. 75, 1860–1862 (1999) https://doi.org/10.1063/1.124852

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Solid-state gadolinium–magnesium hydride optical switch

R. Armitage; M. Rubin; T. Richardson; N. O’Brien; Yong Chen

Appl. Phys. Lett. 75, 1863–1865 (1999) https://doi.org/10.1063/1.124853

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Evolution of the energy levels in quantum dot ensembles with different densities

S. Fafard; Z. R. Wasilewski; M. Spanner

Appl. Phys. Lett. 75, 1866–1868 (1999) https://doi.org/10.1063/1.124854

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Microscopical aspects of boron diffusion in ultralow energy implanted silicon

E. Napolitani; A. Carnera; E. Schroer; V. Privitera; F. Priolo; S. Moffatt

Appl. Phys. Lett. 75, 1869–1871 (1999) https://doi.org/10.1063/1.124855

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Amplified stain-rate dependence of deformation in polymer-dispersed liquid-crystal materials

Darran R. Cairns; Guy M. Genin; Amy J. Wagoner; Clyde L. Briant; Gregory P. Crawford

Appl. Phys. Lett. 75, 1872–1874 (1999) https://doi.org/10.1063/1.124856

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Synthesizing boron nitride nanotubes filled with SiC nanowires by using carbon nanotubes as templates

Weiqiang Han; Philipp Redlich; Frank Ernst; Manfred Rühle

Appl. Phys. Lett. 75, 1875–1877 (1999) https://doi.org/10.1063/1.124857

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Photoinduced surface relief gratings on azopolymer films: Analysis by a fluid mechanics model

K. Sumaru; T. Yamanaka; T. Fukuda; H. Matsuda

Appl. Phys. Lett. 75, 1878–1880 (1999) https://doi.org/10.1063/1.124858

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Macroscopic residual stress in chemical-vapor-deposition free-standing diamond films by x-ray diffraction analyses

O. Durand; J. Olivier; R. Bisaro; P. Galtier; J. K. Krüger; C. J. Brierley; G. R. Kennedy

Appl. Phys. Lett. 75, 1881–1883 (1999) https://doi.org/10.1063/1.124859

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Radiation damage to fullerite $(C_{60})$ in the transmission electron microscope

R. F. Egerton; Manabu Takeuchi

Appl. Phys. Lett. 75, 1884–1886 (1999) https://doi.org/10.1063/1.124860

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Structural and optical quality of GaN/metal/Si heterostructures fabricated by excimer laser lift-off

W. S. Wong; Y. Cho; E. R. Weber; T. Sands; K. M. Yu; J. Krüger; A. B. Wengrow; N. W. Cheung

Appl. Phys. Lett. 75, 1887–1889 (1999) https://doi.org/10.1063/1.124861

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Anisotropic propagation of light in planar waveguides containing InGaAs–InP quantum wells

T. Guettler; O. Krebs; P. Voisin; G. Faini; D. Rondi; C. Alibert

Appl. Phys. Lett. 75, 1890–1892 (1999) https://doi.org/10.1063/1.124862

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Elastic constants of tetrahedral amorphous carbon films by surface Brillouin scattering

A. C. Ferrari; J. Robertson; M. G. Beghi; C. E. Bottani; R. Ferulano; R. Pastorelli

Appl. Phys. Lett. 75, 1893–1895 (1999) https://doi.org/10.1063/1.124863

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Electroluminescence of polymer/J-aggregate composites

Eugene I. Mal’tsev; Dmitry A. Lypenko; Boris I. Shapiro; Maria A. Brusentseva; George H. W. Milburn; Jeffrey Wright; Andre Hendriksen; Vladimir I. Berendyaev; Boris V. Kotov; Anatoly V. Vannikov

Appl. Phys. Lett. 75, 1896–1898 (1999) https://doi.org/10.1063/1.124864

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Persistent photoconductivity in ${Ga}_{1−x} {In}_{x} N_{y} {As}_{1−y}$

J. Z. Li; J. Y. Lin; H. X. Jiang; J. F. Geisz; Sarah R. Kurtz

Appl. Phys. Lett. 75, 1899–1901 (1999) https://doi.org/10.1063/1.124865

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Metal/fluorinated-dielectric interactions in microelectronic interconnections: Rapid diffusion of fluorine through aluminum

S. E. Kim; Ch. Steinbrüchel

Appl. Phys. Lett. 75, 1902–1904 (1999) https://doi.org/10.1063/1.124866

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Photoluminescence study of the initial stages of island formation for Ge pyramids/domes and hut clusters on Si(001)

O. G. Schmidt; C. Lange; K. Eberl

Appl. Phys. Lett. 75, 1905–1907 (1999) https://doi.org/10.1063/1.124867

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High-Q wet-etched GaAs microdisks containing InAs quantum boxes

B. Gayral; J. M. Gérard; A. Lemaı̂tre; C. Dupuis; L. Manin; J. L. Pelouard

Appl. Phys. Lett. 75, 1908–1910 (1999) https://doi.org/10.1063/1.124894

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Interpretation of electrical and galvanomagnetic properties of diamond monocrystals

K. Somogyi

Appl. Phys. Lett. 75, 1911–1913 (1999) https://doi.org/10.1063/1.124868

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Band-gap control of GaInP using Sb as a surfactant

J. K. Shurtleff; R. T. Lee; C. M. Fetzer; G. B. Stringfellow

Appl. Phys. Lett. 75, 1914–1916 (1999) https://doi.org/10.1063/1.124869

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Electrical isolation of a silicon δ-doped layer in GaAs by ion irradiation

I. Danilov; J. P. de Souza; H. Boudinov; A. V. Murel; V. M. Daniltsev; V. I. Shashkin

Appl. Phys. Lett. 75, 1917–1919 (1999) https://doi.org/10.1063/1.124870

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Fabrication of ohmic contacts to buried diamond layers using Pt layer in the diamond chemical-vapor-deposition process

Chunlei Wang; Toshimichi Ito

Appl. Phys. Lett. 75, 1920–1922 (1999) https://doi.org/10.1063/1.124871

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Implantation-induced amorphization of InP characterized with perturbed angular correlation

E. Bezakova; A. P. Byrne; C. J. Glover; M. C. Ridgway; R. Vianden

Appl. Phys. Lett. 75, 1923–1925 (1999) https://doi.org/10.1063/1.124872

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Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates

A. E. Zhukov; A. R. Kovsh; N. A. Maleev; S. S. Mikhrin; V. M. Ustinov; A. F. Tsatsul’nikov; M. V. Maximov; B. V. Volovik; D. A. Bedarev; Yu. M. Shernyakov; P. S. Kop’ev; Zh. I. Alferov; N. N. Ledentsov; D. Bimberg

Appl. Phys. Lett. 75, 1926–1928 (1999) https://doi.org/10.1063/1.124873

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Photoluminescence linewidths of piezoelectric quantum wells

E. A. Khoo; J. P. R. David; J. Woodhead; R. Grey; G. J. Rees

Appl. Phys. Lett. 75, 1929–1931 (1999) https://doi.org/10.1063/1.124874

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Linear electro-optic effect due to the built-in electric field in InGaN/GaN quantum wells

Hongtao Jiang; Jasprit Singh

Appl. Phys. Lett. 75, 1932–1934 (1999) https://doi.org/10.1063/1.124875

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Confinement induced decrease of the exciton-longitudinal optical phonon coupling in GaN quantum dots

Peter Ramvall; Satoru Tanaka; Shintaro Nomura; Philippe Riblet; Yoshinobu Aoyagi

Appl. Phys. Lett. 75, 1935–1937 (1999) https://doi.org/10.1063/1.124876

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Evidence from scanning tunneling microscopy in support of a structural model for the $InSb (001)-c(8×2)$ surface

A. A. Davis; R. G. Jones; G. Falkenberg; L. Seehofer; R. L. Johnson; C. F. McConville

Appl. Phys. Lett. 75, 1938–1940 (1999) https://doi.org/10.1063/1.124877

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MAGNETISM AND SUPERCONDUCTIVITY

Use of magnetocrystalline anisotropy in spin-dependent tunneling

R. A. Lukaszew; Y. Sheng; C. Uher; R. Clarke

Appl. Phys. Lett. 75, 1941–1943 (1999) https://doi.org/10.1063/1.124878

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Spin-polarized scanning tunneling microscopy on ferromagnets

Wulf Wulfhekel; Jürgen Kirschner

Appl. Phys. Lett. 75, 1944–1946 (1999) https://doi.org/10.1063/1.124879

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Magnetic imaging of perovskite thin films by ferromagnetic resonance microscopy— ${La}_{0.7} {Sr}_{0.3} {MnO}_{3}$

S. E. Lofland; S. M. Bhagat; Q. Q. Shu; M. C. Robson; R. Ramesh

Appl. Phys. Lett. 75, 1947–1948 (1999) https://doi.org/10.1063/1.124880

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Atomic order, electron structure, and critical parameters of epitaxial YBaCuO films

V. D. Okunev; Z. A. Samoilenko; A. Abal’oshev; P. Gierłowski; A. Klimov; S. J. Lewandowski

Appl. Phys. Lett. 75, 1949–1951 (1999) https://doi.org/10.1063/1.124881

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High oxygen pressure generation of flux-pinning centers in melt-textured ${YBa}_{2} {Cu}_{3} O_{7}$

T. Puig; J. Plain; F. Sandiumenge; X. Obradors; J. Rabier; J. A. Alonso

Appl. Phys. Lett. 75, 1952–1954 (1999) https://doi.org/10.1063/1.124882

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High temperature c-axis resistivity of ${Bi}_{2} {Sr}_{2} {CaCu}_{2} O_{8+x}$ single crystals and dependence on oxygen stoichiometry

G. Yang; J. S. Abell; C. E. Gough

Appl. Phys. Lett. 75, 1955–1957 (1999) https://doi.org/10.1063/1.124883

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DIELECTRICS AND FERROELECTRICITY

The ferroelectricity of perovskite-type oxides with alkylamine interlayer

Zhaohui Zhong; Weiping Ding; Yi Chen; Xiaoyuan Chen; Yongyuan Zhu; Naiben Min

Appl. Phys. Lett. 75, 1958–1960 (1999) https://doi.org/10.1063/1.124884

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Structure determination of a planar defect in ${SrBi}_{2} {Ta}_{2} O_{9}$

Y. Yan; M. M. Al-Jassim; Z. Xu; X. Lu; D. Viehland; M. Payne; S. J. Pennycook

Appl. Phys. Lett. 75, 1961–1963 (1999) https://doi.org/10.1063/1.124885

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The dependence of electron emission on ferroelectric properties of $Pb ({Zr}_{x} {Ti}_{1−x}) O_{3}$

Yong Tae Kim; Ki Hyun Yoon; Tae Heui Kim; Kyung Bong Park

Appl. Phys. Lett. 75, 1964–1966 (1999) https://doi.org/10.1063/1.124886

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High dielectric constant Hf–Sn–Ti–O thin films

L. F. Schneemeyer; R. B. van Dover; R. M. Fleming

Appl. Phys. Lett. 75, 1967–1969 (1999) https://doi.org/10.1063/1.124887

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Electrical properties of (001)- and (116)-oriented epitaxial ${SrBi}_{2} {Ta}_{2} O_{9}$ thin films prepared by metalorganic chemical vapor deposition

Katsuyuki Ishikawa; Hiroshi Funakubo

Appl. Phys. Lett. 75, 1970–1972 (1999) https://doi.org/10.1063/1.124888

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Film formation by motion control of ionized precursors in electric field

Motoaki Adachi; Toshiyuki Fujimoto; Koichi Nakaso; Kikuo Okuyama; Frank G. Shi; Hideki Sato; Toshio Ando; Hideki Tomioka

Appl. Phys. Lett. 75, 1973–1975 (1999) https://doi.org/10.1063/1.124889

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DEVICE PHYSICS

Low-leakage-current metal–insulator–semiconductor–insulator–metal photodetector on silicon with a ${SiO}_{2}$ barrier-enhancement layer

M. Seto; C. Rochefort; S. de Jager; R. F. M. Hendriks; G. W. ’t Hooft; M. B. van der Mark

Appl. Phys. Lett. 75, 1976–1978 (1999) https://doi.org/10.1063/1.124890

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APPLIED BIOPHYSICS

High- $T_{c}$ second-order gradiometer for magnetocardiography in an unshielded environment

K. A. Kouznetsov; J. Borgmann; John Clarke

Appl. Phys. Lett. 75, 1979–1981 (1999) https://doi.org/10.1063/1.124891

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INTERDISCIPLINARY AND GENERAL PHYSICS

Field and potential around local scatterers in thin metal films studied by scanning tunneling potentiometry

Geetha Ramaswamy; A. K. Raychaudhuri

Appl. Phys. Lett. 75, 1982–1984 (1999) https://doi.org/10.1063/1.124892

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Acoustic generation in liquid crystals

Young Jin Kim; Jay S. Patel

Appl. Phys. Lett. 75, 1985–1987 (1999) https://doi.org/10.1063/1.124893

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Online ISSN 1077-3118
Print ISSN 0003-6951

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